CN105339834A - Liquid crystal display device - Google Patents

Abstract

A liquid crystal display device is provided with a liquid crystal cell having an opposing substrate (100) to which is provided a black matrix (2) having a plurality of pixel openings, and an array substrate (300) in which a light sensor (S1), an active element, and a metal wiring are arranged, a liquid crystal layer being interposed between the substrates (100, 300), and the black matrix (2) has transmission characteristics in which the transmittance is 50% or greater in a detection wavelength region of a light wavelength of 680 nm to 800 nm, whereby transmittance is even higher on the long-wavelength side. The light sensor (S1) has a sensitivity region including the detection wavelength region, and is formed so as to overlap with the black matrix (2) in plan view at a position closer to the liquid crystal layer than the active element. At least a surface layer of the metal wiring is configured from copper or copper alloy, and, in plan view, the metal wiring is formed so as to fill a region overlapping with the light sensor (S1).

Description

Liquid crystal indicator

Technical field

The present invention relates to the liquid crystal indicator possessing optical sensor, particularly can improve the liquid crystal indicator of the sensitivity of the infrared of optical sensor.

The application in No. 2013-142043, the Patent of Japanese publication and CLAIM OF PRIORITY, here cites its content based on July 5th, 2013.

Background technology

As the means from the direct input selection information of the display frame of liquid crystal indicator etc., in recent years, the static capacity mode employing touch panel is widely spread.Touch panel is generally the structure being attached at and the display frame of liquid crystal indicator etc. uses.

But the touch panel observer had away from display frame is difficult to the problem operated.In addition, the thickness of touch panel and weight are applied in display device, and therefore, in the mini-plant such as mobile phone or panel computer, touch panel hampers slimming and lightness.

Therefore, in order to make the observer be positioned at away from the position of display frame also can operate, and investigation arranges optical sensor in the inside of liquid crystal indicator, detects with optical sensor.In addition, the liquid crystal indicator being provided with optical sensor is intended in the fields such as shooting, color photocopying, optical communication and realizes correct color separated.

Such as, Patent Document 1 discloses to use and there is the colored filter substrate of detection optical filter and photoelectric sensor and be used as the visible ray of the 1st wavelength and carry out the input technology that inputs as the non-visible light of the 2nd wavelength from picture.Specifically describe: make the infrared filter as the infrared transmission of non-visible light and the problem that causes operation to increase, by the technology making the colour superimposition of colored filter solve such problem in order to solve owing to arranging in addition.

But making described in patent documentation 1, in the structure of the colour superimposition of colored filter, may cause liquid crystal aligning to produce unsuitable ladder poor.In addition, in the structure of colour superimposition making colored filter, the transmission area of detection colored filter (infrared filter) is below 800nm, and this structure is unsuitable for redness, green, blue color separated.Specifically, existing cannot well by the problem of the light of the wavelength zone near 680nm near 800nm separation.

In addition, For example, Patent Document 2 discloses transistor to be arranged at the technology of the position overlapping with photodiode.But, technology described in patent documentation 2 is make display device for qurer or make the technology of its small-sized lightness, and develop skill about the sensitivity of the photodiode as optical sensor, completely open, wiring technique, the oxide semiconductor technology of transistor or photodiode are not also disclosed.

In addition, such as, patent documentation 3 discloses the technology of the active array type display base plate possessing thin film transistor (TFT).But it is not in patent documentation 3, the sensitivity about optical sensor develops skill and oxide semiconductor technology, all open.In addition, in patent documentation 3, describe and use the alkaline aqueous solution containing oxygenant to carry out Wet-type etching to copper or the alloy containing copper.

But disclosed in patent documentation 3, it is difficult for carrying out Wet-type etching with bringing damage to the amorphous silicon forming field effect transistor (TFT, Thin-FilmTransistor).In addition, when to copper or when carrying out dry-etching containing the alloy of copper, it is seriously polluted that copper ion brings, and do not carry out dry-etching with bringing damage more difficult to amorphous silicon.And, groove may be contaminated, unrealized practical in the thin copper film technology of the TFT of amorphous silicon semiconductor in the dry-etching when the channel layer of amorphous silicon is formed also.

Look-ahead technique document

Patent documentation

Patent documentation 1: Japanese Laid-Open 2009-129397 publication

Patent documentation 2: Japanese Laid-Open 2013-008991 publication

Patent documentation 3: the flat 10-307303 publication of Japanese Laid-Open

Summary of the invention

The problem that invention will solve

The present invention makes in view of such situation in the past, and object is lain in be provided a kind of and make to use up detection and the excellent liquid crystal indicator of sensitivity.

Solve the means of problem

In order to solve above-mentioned problem, several mode of the present invention provides following such liquid crystal indicator.

The liquid crystal indicator of the 1st mode of the present invention has liquid crystal cells, and this liquid crystal cells has: counter substrate, has the 1st transparency carrier, at least sequentially laminated with the black matrix with multiple pixel openings portion on described 1st transparency carrier, and transparent resin layer, and array base palte, there is the 2nd transparency carrier, described 2nd transparency carrier is at least equipped: optical sensor, multiple active components of oxide semiconductor are possessed as channel layer, and metal line, described counter substrate and described array base palte are relatively fitted across liquid crystal layer and formed this liquid crystal cells, described black matrix has transmissivity in the determined wavelength district of above below the 800nm of wavelength 680nm of light becomes more than 50%, wavelength when becoming more than 50% than described transmissivity becomes the transmissison characteristic of higher transmissivity by long wavelength side, described sensor has the sensitivity district comprising described determined wavelength district, and than the position of described active component near described liquid crystal layer, be formed as overlapping with described black matrix when overlooking from described counter substrate, the at least top layer of described metal line is made up of copper or aldary, described metal line is formed as the region landfill overlapping with described optical sensor when overlooking from described counter substrate.

The liquid crystal indicator of the 2nd mode of the present invention possesses liquid crystal cells, this liquid crystal cells has: counter substrate, there is the 1st transparency carrier, on described 1st transparency carrier at least sequentially laminated with: there is multiple pixel openings portion and the light of visible region and infrared carried out to the light shield layer of shading, red color layer, green layer, the colored pixels of cyan coloring layer and the colored filter formed is possessed respectively in described multiple pixel openings portion, black matrix, and transparent resin layer, and array base palte, there is the 2nd transparency carrier, described 2nd transparency carrier is at least equipped: optical sensor, multiple active components of oxide semiconductor are possessed as channel layer, and metal line, described counter substrate and described array base palte are relatively fitted across liquid crystal layer and formed this liquid crystal cells, described black matrix has transmissivity in the determined wavelength district of above below the 800nm of wavelength 680nm of light becomes more than 50%, wavelength when becoming more than 50% than described transmissivity becomes the transmissison characteristic of higher transmissivity by long wavelength side, and, have and described red color layer, described green layer, the overlapping portion of any one overlap in described cyan coloring layer, described sensor has the sensitivity district comprising described determined wavelength district, than the position of described active component near described liquid crystal layer, be formed as overlapping with described black matrix when overlooking from described counter substrate, the at least top layer of described metal line is made up of copper or aldary, described metal line is formed as the region landfill overlapping with described optical sensor when overlooking from described counter substrate.

The liquid crystal indicator of the 3rd mode of the present invention possesses liquid crystal cells, and this liquid crystal cells has: counter substrate, has the 1st transparency carrier, at least sequentially laminated with the black matrix with multiple pixel openings portion on described 1st transparency carrier, red color layer, green layer, the colored pixels of cyan coloring layer and the colored filter formed is possessed respectively in described multiple pixel openings portion, and transparent resin layer, and array base palte, there is the 2nd transparency carrier, described 2nd transparency carrier is at least equipped: optical sensor, multiple active components of oxide semiconductor are possessed as channel layer, and metal line, described counter substrate and described array base palte are relatively fitted across liquid crystal layer and formed this liquid crystal cells, described black matrix has transmissivity in the determined wavelength district of above below the 800nm of wavelength 680nm of light becomes more than 50%, wavelength when becoming more than 50% than described transmissivity becomes the transmissison characteristic of higher transmissivity by long wavelength side, and, have and described red color layer, described green layer, the overlapping portion of any one overlap in described cyan coloring layer, described sensor has the sensitivity district comprising described determined wavelength district, than the position of described active component near described liquid crystal layer, be formed as overlapping with described black matrix when overlooking from described counter substrate, the at least top layer of described metal line is made up of copper or aldary, described metal line is formed as the region landfill overlapping with described optical sensor when overlooking from described counter substrate.

In the liquid crystal indicator of aforesaid way of the present invention, be preferably, in described black matrix, contain multiple organic pigment as mass-tone material.

In the liquid crystal indicator of aforesaid way of the present invention, be preferably, described oxide semiconductor is the composite metal oxide of more than two kinds being selected from gallium, indium, zinc, hafnium, tin, yttrium, titanium, germanium, silicon.

In the liquid crystal indicator of aforesaid way of the present invention, be preferably, described colored filter in the described red color layer position overlapping with described black matrix, each position of the described green layer position overlapping with described black matrix, the described cyan coloring layer position overlapping with described black matrix, there is described overlapping portion, described optical sensor, when overlooking, is disposed in described red color layer, described green layer, the bottom of each colored pixels of described cyan coloring layer, the bottom of described overlapping portion respectively.

In the liquid crystal indicator of aforesaid way of the present invention, be preferably, also possess backlight unit, this backlight unit is arranged at described liquid crystal cells with described counter substrate opposition side, sends the light of at least long than 680nm wavelength zone.

In the liquid crystal indicator of aforesaid way of the present invention, be preferably, also possess optical sensor, this optical sensor is formed as overlapping with described pixel openings portion when overlooking from described counter substrate, and at least has sensitivity district in visible region.

Invention effect

According to liquid crystal indicator of the present invention, can provide and make to use up detection and the excellent liquid crystal indicator of sensitivity.

Accompanying drawing explanation

Fig. 1 is the chart of the reflection characteristic representing the metal corresponding with wavelength.

Fig. 2 is for representing the major part amplification sectional view of the liquid crystal indicator involved by the 1st embodiment of the present invention.

Fig. 3 is for representing the partial top view in multiple pixel openings portions of the liquid crystal indicator involved by the 1st embodiment of the present invention.

Fig. 4 is for representing the pattern sectional view of the liquid crystal indicator involved by the 1st embodiment of the present invention.

Fig. 5 is the chart of the wavelength selective transmission characteristic representing black matrix.

Fig. 6 is the sectional view of the A-A ' line along Fig. 1.

Fig. 7 is for representing the partial top view in multiple pixel openings portions of the liquid crystal indicator involved by the 2nd embodiment of the present invention.

Fig. 8 is for representing the pattern sectional view of the liquid crystal indicator involved by the 2nd embodiment of the present invention.

Fig. 9 is for representing the major part amplification sectional view of the liquid crystal indicator involved by the 2nd embodiment of the present invention.

Figure 10 be represent the transmissison characteristic of green layer and green layer overlapping with the transmissison characteristic of black matrix after the chart of transmissison characteristic.

Figure 11 be represent the transmissison characteristic of red color layer and red color layer overlapping with the transmissison characteristic of black matrix after the chart of transmissison characteristic.

Figure 12 be represent the transmissison characteristic of cyan coloring layer and cyan coloring layer overlapping with the transmissison characteristic of black matrix after the chart of transmissison characteristic.

Figure 13 is the partial section of the liquid crystal indicator of expression the 3rd embodiment.

Embodiment

Below, with reference to accompanying drawing, the embodiment of liquid crystal indicator involved in the present invention is described.In addition, embodiment shown below is purport in order to understand invention better and the mode be illustrated particularly, but is not limited to the mode of particularly specifying, and does not limit the present invention.In addition, in the accompanying drawing that the following description uses, be easier to make feature of the present invention understand, conveniently sometimes enlargedly show the part as major part, the dimensional ratios of each inscape etc. may not be identical with actual conditions.

In each embodiment, to identical or that essence is identical function and inscape, give same reference numerals, omit the description or be only described where necessary.In addition, in each embodiment, only characteristic part is described, about the part of the textural element indifference with known liquid crystal indicator, omits the description.

In each embodiment, the unit of display of liquid crystal indicator is described as pixel.Pixel by black matrix trace inequality out, there is the polygonal minimum unit of display of at least 2 parallel edges.In each embodiment, the peristome of pixel and black matrix or the peristome of light shield layer are almost synonym.In each embodiment, various liquid crystal drive mode can be applied.

Such as, IPS mode (InPlaneSwitching can be used, employ the lateral electric field type of the liquid crystal molecule of horizontal alignment), VA mode (VerticallyAlignment: the vertical Electric Field Mode employing vertical orientated liquid crystal molecule), HAN (Hybrid-alignedNematic), TN (TwistedNematic), OCB (OpticallyCompensatedBend), CPA (ContinuousPinwheelAlignment), ECB (ElectricallyControlledBirefringence), TBA (TransverseBentAlignment) is such, liquid crystal aligning mode or liquid crystal drive mode.Liquid crystal layer can comprise the liquid crystal molecule with positive dielectric constant anisotropy, or also can comprise the liquid crystal molecule with negative dielectric constant anisotropy.

The sense of rotation (direction of action) of liquid crystal molecule when liquid crystal drive voltage applies can be the direction parallel with the surface of substrate, also can be and the direction that erects, the plane orthogonal of substrate ground.The direction being applied to the liquid crystal drive voltage of liquid crystal molecule can be horizontal direction, and the direction that also can be two dimension or dimensionally tilt also can be vertical direction.

As the semiconductor that can be applied in the optical sensor of each embodiment, can list: visible region (the wavelength 400nm ~ 700nm of such as light) to infrared there is the amorphous silicon semiconductor of sensitivity, the polysilicon semiconductor in the wavelength zone of near ultraviolet range or blueness with main sensitivity, microcrystalline silicon semiconductor, SiGe (SiGe) semiconductor, the oxide semiconductor etc. that is representative with IGZO (registered trademark) or ITZO (registered trademark).

When using these semiconductors, be preferably, adjust its band gap, the wavelength zone as object is given to the sensitivity district of optical sensor.In SiGe semiconductor, change band gap continuously by the interpolation ratio of Ge, what can adjust its photo detector is subject to optical wavelength, can give the sensitivity in infrared.Also the SiGe semiconductor of the concentration gradient with Ge can be set to.By using the semiconducting compounds such as such as GaAs, InGaAs, PbS, PbSe, SiGe, SiGeC, the optical sensor of the detection being suitable for infrared light can be formed.

The liquid crystal indicator being built-in with optical sensor is easily subject to the impact of temperature and the impact of backlight unit.Causing the input misoperation producing finger or laser etc. in order to prevent the noise owing to causing because of backlight unit or outer light, sometimes needing the compensation carrying out optical sensor.When employing the silicon photoelectric diode possessing the channel layer formed by polysilicon or amorphous silicon as optical sensor, sometimes produce dark current due to the change of environment temperature etc. thus in observation data, be added into the noise beyond observation light.

As the on-off element driving liquid crystal layer or optical sensor, the field effect transistor (active component, TFT) possessed as channel layer by oxide semiconductor can be adopted.At this, so-called oxide semiconductor refers to the oxide semiconductor of the oxide at least of more than two kinds comprised in the middle of indium, gallium, tin, zinc, hafnium, yttrium, titanium, germanium, silicon.As this oxide semiconductor, can exemplify be referred to as IGZO, the composite metal oxide of indium, gallium, zinc.The material of the channel layer formed by oxide semiconductor both can be the material of amorphous also can be crystallization, from the viewpoint of the stability of the electrical specification (such as, Vth) of transistor, is preferably the material using crystallization.The thickness of the channel layer of oxide semiconductor is preferably formed to such as 2nm ~ 80nm degree.

The metal line possessing the array base palte of such TFT can be set to employ on top layer copper or aldary, the metal line of at least 2 layers.Metal line can adopt and such as with the addition of to copper more than the a kind element and the aldary that obtains selected from magnesium, titanium, nickel, molybdenum, indium, tin, zinc, aluminium, calcium etc.To copper add element be not limited to above-mentioned element, relative to copper addition be preferably, relative to copper atom half proportion by subtraction and be below 3 atom half proportions by subtraction.If be below 1 atom half proportion by subtraction, guarantee high light reflectivity while the light reflectance of metal line can be reduced not significantly.Be more preferably the addition of below 1 atom half proportion by subtraction.

In addition, be that array substrate, when observing on the cross section of thickness direction, is positioned at liquid crystal layer side (close to the position of liquid crystal layer on the top layer of the metal line of this indication, optical sensor side, the position close to optical sensor) metal level (the 1st metal level).Relative to copper or the aldary on top layer, the metal level (the 2nd metal level) being positioned at bottom is positioned at array base palte side (position close to array base palte).

The refractory metals such as titanium, molybdenum, tantalum, tungsten or the alloy containing these materials is preferably adopted in 2nd metal level.The copper of etch-rate (rate) and the 1st metal level or the close titanium alloy of aldary can be selected as the 2nd metal level.Be preferably, the thickness of copper or aldary and the thickness of the 2nd metal level are such as formed as the scope of 50nm ~ 500nm respectively.

Do not limit at top layer use the 1st metal level of oxide semiconductor layer, copper or aldary, the film build method of the 2nd metal level, but the vacuum film formation of sputtering is preferred in production efficiency.By spattering filming device, can with high productivity, carry out film forming to the metal line be made up of the 1st metal level, the 2nd metal level efficiently to large-area transparency carrier.The 1st metal layer be made up of copper or aldary on oxide semiconductor as by selectively being etched with oxidisability alkaline etching, can not carry out the pattern carried out with damaging as metal line and is formed by oxygen supply compound semiconductor tape.Easily can to process in the transistor of silicon based semiconductor very difficult, employ copper or aldary on top layer metal line and metal level originally, can transistor unit be formed.

The 1st metal layer be made up of copper or aldary as shown in Figure 1, shows high reflectivity at the long wavelength side of light, particularly more than 600nm.As shown in Figure 2, by forming metal line in the mode of overlapping with the 1st optical sensor S1 and the 2nd optical sensor S2 (carrying out landfill to bottom), directly incident light and the reflected light after being reflected by metal line can be accepted, the light reception sensitivity of the 1st optical sensor S1 and the 2nd optical sensor S2 can be improved.In addition, in the embodiment shown in figure 2, the transistor possessing the channel layer 26 of oxide semiconductor is illustrated with bottom gate structure, but is not limited to bottom gate structure.Such as, the transistor of top grid structure, double grid structure (doublegatestructure) or dual-gate (dualgatestructure) structure etc. can be adopted.

< the 1st embodiment >

When the liquid crystal indicator of the 1st embodiment carries out colored display, for example, assuming that for possessing the liquid crystal indicator of backlight unit with emitting red light LED, green emitting LED, blue-light-emitting LED.When not carrying out colour display, also white luminous LED or fluorescent light can be used as backlight unit.

Fig. 3 is for representing the partial top view in multiple pixel openings portions of the liquid crystal indicator involved by embodiments of the present invention.In addition, in this Fig. 3, illustrate only 8 pixels, for being in fact equipped with a part for the display surface of the liquid crystal indicator of 768 pixels in 1280 pixels, Y-direction in a large amount of pixels, such as X-direction.

Multiple pixel P, P ... divided by the pixel openings portion 20 being formed at black matrix 2.Optical sensor is made up of the 1st optical sensor (optical sensor) S1 and the 2nd optical sensor S2, is configured at pixel P respectively.In addition, as the structure being configured with the 1st optical sensor S1, the 2nd optical sensor S2, also can be the structure of the optical sensor arranging 1 group in a plurality of pixels, that is, not that the optical sensor of 1 group is set in whole pixel but (at predetermined intervals) in the middle of multiple pixel is configured the optical sensor (partial configuration) of 1 group in a pixel selecting.

1st optical sensor S1 is configured in the position (position overlapping with black matrix 2) covered by black matrix 2.On the other hand, the 2nd optical sensor S2 is configured at pixel openings portion 20 in the mode entering incident light externally to inside from display surface.1st optical sensor S1, the 2nd optical sensor S2 must not be configured in same pixel P, but in order to the computing of light data, preferably make the 1st optical sensor S1 and the 2nd optical sensor S2 be arranged on position close to each other.

In the present embodiment, if deduct the light data of the 1st optical sensor S1 from the light data of the 2nd optical sensor S2, then the light data of the visible region after except region of ultra-red can be drawn into.When this subtraction, such as, can cut the dark current that the 1st optical sensor S1 and the 2nd optical sensor S2 has respectively, therefore, it is possible to obtain high-precision light data.

Fig. 4 is the pattern sectional view of the liquid crystal indicator 400 representing the rear side (position close to the back side) backlight unit 13 being disposed in array base palte 300.At surface and the back side of liquid crystal cells 200, possess polarization plates 15 as optical control element, be configured with the 1st optical sensor S1, the 2nd optical sensor S2 in liquid crystal layer 6 bottom.Such as, the light 18 from backlight unit 13 outgoing reflects by the indicator such as finger 16 grade of observer, as incident light 19 by the 1st optical sensor S1 and the 2nd optical sensor S2 light.Incident light 19 is not limited to the reflected light from indicator such as finger 16 grade, such as, also can be the incident light from laser designator etc.In addition, a part for incident light 19 is reflected, by the 1st optical sensor S1 light due to the metal line 24 arranged in the mode of the bottom landfill by the 1st optical sensor S1.Thus, the detection sensitivity of incident light 19 improves.Backlight unit 13 such as possesses emitting red light LED, green emitting LED, blue-light-emitting LED, infrared light emission LED as light source 14.

Fig. 2 represents the sectional view along the cross section of the B-B ' line of Fig. 3.

In the bottom of the 1st optical sensor S1, arrange the metal line 24 forming source electrode line or drain line etc., or be not formed with the position of metal line 24, arrange the pseudo-pattern 25 of metal level.Such as, pseudo-pattern 25, in its manufacturing process, can be formed at identical layer with gate line simultaneously.In Fig. 2 although not shown, but in the bottom of the 2nd optical sensor S2 be also equipped with the metal line such as source electrode line or drain line 24 or be configured with the pseudo-pattern 25 of metal level at the position not forming metal line 24.

1st optical sensor S1 and the 2nd not shown optical sensor S2 have from the close position of liquid crystal layer 6 towards away from position direction on sequentially laminated with the structure of the amorphous silicon 35 of P-type semiconductor, the amorphous silicon 36 of intrinsic semiconductor (I type), the amorphous silicon 37 of N-type semiconductor.Such as, Ke Yishi, the amorphous silicon 35 of P-type semiconductor is formed with the thickness of 20nm ~ 200nm with the amorphous silicon 37 of thickness 100nm ~ 1000nm, N-type semiconductor with the amorphous silicon 36 of the thickness of 5nm ~ 50nm, I type semiconductor.

Upper electrode 21 and the lower electrode 22 of function is played at the lower surface of the upper surface of the amorphous silicon 35 of P-type semiconductor, the amorphous silicon 37 of the N-type semiconductor conducting film (nesa coating) be equipped separately as light transmission.Nesa coating is such as formed by the conductive metal oxide etc. being referred to as ITO (IndiumTinOxide).Upper electrode 21 such as can be set to the thread pattern of zigzag fashion or the thread pattern etc. of comb teeth-shaped.By designing the pattern form of upper electrode 21, the current collection effect of lower electrode 22 can be improved.

In order to improve sensitivity on the 1st optical sensor S1, the 2nd optical sensor S2, such as, also can come stacked cylindrical structure thing, sag and swell thing, quantum dot etc. by transparent resin etc.Preferably in these structures, add the particle with wavelength conversion function or dyestuff etc.The forming position of P-type semiconductor and N-type semiconductor also can be exchanged, or also can be formed side by side in the horizontal direction.Amorphous silicon also can be set to microcrystal silicon.

These the 1st optical sensor S1 and the 2nd optical sensor S2 as shown in Figure, on the substrate of transistor being pre-formed with oxide semiconductor, such as, use known amorphous silicon semiconductor operation to be formed.

1st optical sensor S1 is electrically connected with electrode 24 from lower electrode 22 via contact hole 23 and metal line 20.The upper electrode 21 of the 1st optical sensor S1 connects up with common electrode via not shown contact hole and is connected.Thus, when being endowed reset signal, the current potential of the 1st optical sensor S1 can be set to common potential.Insulation course 33 can utilize such as monox, silicon oxynitride, aluminium oxide and comprise the mixed oxide of these materials or photonasty and the acryl resin etc. that can carry out alkaline development is formed.The 2nd optical sensor S2 not shown in Fig. 2 also can be formed in the same manner as the 1st optical sensor S1.

Arrange multiple transistor in the bottom of the 1st optical sensor S1, the 2nd optical sensor S2, the driving of the 1st optical sensor S1, the 2nd optical sensor S2 can be carried out.Multiple transistors of oxide semiconductor such as can be used in the selection transistor of the 1st optical sensor S1 or the 2nd optical sensor S2, amplification transistor, reset transistor or liquid crystal drive transistor etc.When the electric capacity of the 1st optical sensor S1, the 2nd optical sensor S2 is less, auxiliarily capacitor can be equipped with separately.

The light reflectance forming the copper of metal line 24 or aldary as shown in Figure 1, light long wavelength side, particularly show high reflectivity at more than 600nm.As shown in Figure 2, in that carry out landfill to the bottom of the 1st optical sensor S1, the 2nd optical sensor S2, namely overlapping with the 1st optical sensor S1, the 2nd optical sensor S2 region, arrange the pattern of metal line 24, thereby, it is possible to make the reflected light that reflected by this metal line 24 by the 1st optical sensor S1, the 2nd optical sensor S2 to carry out light.Thereby, it is possible to improve the 1st optical sensor S1, the 2nd optical sensor S2 by optical efficiency.

Black matrix 2 in present embodiment is as shown in the line BLK1 of the expression wavelength selective transmission characteristic of Fig. 5, there is transmissivity in the determined wavelength district of more than 680nm below 800nm become more than 50%, more become the transmissison characteristic of higher transmissivity at the wavelength becoming more than 50% than transmissivity by long wavelength side, make visible transmission hardly and make the Transmission light of infrared.The half value wavelength of black matrix 2 by the selection of organic pigment kind or combination, can adjust in the scope of about 680nm to 800nm.So-called half value wavelength, is defined herein as the wavelength of light when transmissivity becomes 50%.In addition, the material formation of black matrix 2 waits until explained later.

Fig. 6 is the sectional view of the A-A ' line along Fig. 3, and the structure as liquid crystal indicator is described.In addition, the diagram of the driving transistor, polarization plates, alignment films etc. of liquid crystal layer is eliminated.

The liquid crystal molecule of the liquid crystal layer 6 of Fig. 6 has the initial orientation with the one side level of array base palte 30, the action rotated is carried out on the whole by the voltage be applied between pixel electrode 31 and common electrode 32, control the transmissivity from the light of backlight unit outgoing, show thus.The dielectric constant anisotropy of liquid crystal molecule both can be just also can be negative.The transparent resin layer 12 (the 1st transparent resin layer) of counter substrate 100 does not form the transparency electrodes such as ITO.In addition, the alignment films on transparent resin layer 12 eliminates diagram.

< the 2nd embodiment >

2nd embodiment as shown in Figure 7, Figure 8, for possessing the structure (showing green layer G part enlargedly in Fig. 7,8) of colored filter being equipped with red color layer R, green layer G, cyan coloring layer B in the position corresponding with the pixel openings portion 20 being formed at black matrix 2 of liquid crystal indicator.1st optical sensor S1, the 2nd optical sensor S2 in a same manner as in the first embodiment, are formed at the middle separately of multiple pixel.The liquid crystal molecule of liquid crystal layer 6 is initial orientations is vertical orientated liquid crystal, is driven, topple over, make Transmission light when voltage applies to horizontal direction by the voltage be applied between opposite electrode (common electrode) 52 and pixel electrode 51.Polarization plates is set to normally closed by cross Nicols structure.

Fig. 8 is the sectional view of the C-C ' line along Fig. 7.With the shape roughly the same with black matrix 2, arrange light shield layer 3 with predetermined pattern, and on colored filter, be formed with the 2nd transparent resin layer 4.2nd transparent resin layer can omit it and be formed.

Such as, light shield layer 3 uses the carbon of light-proofness to be used as look material and is formed, and makes in fact visible ray and infrared all not transmissions.Black matrix 2 is identical with the 1st embodiment, is mixed with multiple organic pigment, has and makes visible region not transmission and make the characteristic of infrared transmission in fact.

The wavelength of 50% transmissivity (half value wavelength), as line BLK1 and BLK2 of the expression wavelength selective transmission characteristic of Fig. 5 is representative, can be set as the scope of about 680nm to 800nm by the black matrix 2 involved by embodiments of the present invention.The adjustment of this half value wavelength can be undertaken by the adjustment of the thickness of the combination of organic pigment or pigment ratio or black matrix 2.

The black matrix 2 of present embodiment as shown in Figure 9, in the region of pattern not being formed with light shield layer 3 and metal line 24, has the overlapping portion overlapping with colored filter (being green layer G in Fig. 9).In addition, Fig. 9 is the sectional view of the D-D ' line along Fig. 7.

Figure 10 be the pattern representing green layer G transmissison characteristic GL, by the chart of an example of the transmissison characteristic GLBLK after overlapping for the transmissison characteristic BLK1 (reference Fig. 5 and Fig. 9) of the pattern of green layer G and black matrix 2.Transmissison characteristic GL is equivalent to the light data of the 2nd optical sensor S2 shown in Fig. 9.Transmissison characteristic GLBLK is equivalent to the light data of the 1st optical sensor S1 shown in Fig. 9.

The detection data of the high-precision green of visible region be from via green layer G pattern detection to light detection data deduct the pattern of green layer G and detection data of the light that detects overlapping optically with black matrix 2 and obtain.The calculation process of these data is undertaken by handling part 34, only can extract the detection data of the green of visible region.

Figure 11 be the pattern representing red color layer R transmissison characteristic RL, by the chart of an example of the transmissison characteristic RLBLK after overlapping for the transmissison characteristic BLK1 (reference Fig. 5 and Fig. 9) of the pattern of red color layer R and black matrix 2.Transmissison characteristic RL is equivalent to the light data of the 2nd optical sensor S2 shown in Fig. 9.Transmissison characteristic RLBLK is equivalent to the light data of the 1st optical sensor S1 shown in Fig. 9.

The detection data of the high-precision redness of visible region be from via red color layer R pattern detection to light detection data deduct the pattern of red color layer R and detection data of the light that detects overlapping optically with black matrix 2 and obtain.The calculation process of these data is undertaken by handling part 34, only can extract the detection data of the redness of visible region.

Figure 12 be the pattern representing cyan coloring layer B transmissison characteristic BL, the pattern of cyan coloring layer B is overlapping with the transmissison characteristic BLK1 of black matrix 2 after the chart of an example of transmissison characteristic BLBLK.Transmissison characteristic BL is equivalent to the light data of the 2nd optical sensor S2 shown in Fig. 9.Transmissison characteristic BLBLK is equivalent to the light data of the 1st optical sensor S1 shown in Fig. 9.

The detection data of the high-precision blueness of visible region be from via cyan coloring layer B pattern detection to light detection data deduct detection data that the are pattern of cyan coloring layer B is overlapping optically with black matrix 2 and the light detected and obtain.The calculation process of these data is undertaken by handling part 34, only can extract the detection data of the blueness of visible region.

The subtraction of the light data of the 1st optical sensor S1 and the 2nd optical sensor S2 the 1st, when its computing, can compensate the dark current that the change etc. of described environment temperature causes, therefore, it is possible to extract more high-precision light data.If outer light such as the indoor of incident light such outer light that is sunshine or dark, then can also by these light data and the respective brightness adjustment that correspondingly feed back to liquid crystal indicator by optical condition.

When for the purpose of the obtaining of the light data such as only in 680nm to 800nm scope of near infrared light area, the light data of the 1st optical sensor S1 of the bottom of such as overlapping with black matrix 2 from the pattern the being arranged in red color layer R overlapping portion light data to the 1st optical sensor S1 of the bottom of the pattern the being positioned at cyan coloring layer B overlapping portion overlapping with black matrix 2 carry out subtraction.Thereby, it is possible to extract the light data between 680nm to 800nm.Now, the compensation of described dark current can also be carried out simultaneously.

In addition, in Fig. 9, each solid-state light emitting element (LED) possessing red green blue-light-emitting can also eliminated in illustrated backlight unit.Such as, the synchro control of the liquid crystal in segmentation (field sequential) luminescence and pixel portion when red LED, green LED, blue led being carried out.Thereby, it is possible to carry out full-color display.And, except red LED, green LED, blue led, add infrared light emission LED, can irradiate waiting from the infrared ray of infrared light emission LED outgoing to finger indicator thus, such can be configured to touch-sensing purposes.

1st optical sensor S1 can be applied to the detection of infrared ray light.If adopt red green blue-light-emitting and be reflected in light data simultaneously, then the 1st optical sensor S1 and the 2nd optical sensor S2 can be applied in color photocopying or personal verification etc.Such as, by the high-precision densification of more than 300ppi, by possessing the liquid crystal indicator of the base plate for liquid crystal display device involved by embodiments of the present invention, finger identification can also be applied to and wait personal verification's system.

In addition, when using the photodiode of silicon system in the optical sensor of the liquid crystal indicator involved by embodiments of the present invention, can PIN diode be used, also can use PN diode.When PIN diode, the horizontal direction of the arrangement in territory/intrinsic region/N-type region territory, p type island region along the face of transparency carrier can be arranged side by side, or, also can be structure stacked in the vertical direction in the face of transparency carrier.

As described above, by apply flexibly possess in liquid crystal indicator involved in the present invention in black matrix 2 and the position of the pattern overlapping of red color layer R, black matrix 2 and the position of the pattern overlapping of green layer G, black matrix 2 and the overlapping portion arranged of respectively getting along alone of the position of the pattern overlapping of cyan coloring layer B, high-precision color separated can be realized.

By possessing the liquid crystal indicator of the base board for display device involved by embodiments of the present invention, such as, can realize color photocopying, colored shooting or the touch-sensing, optical communication etc. applying flexibly, make use of infrared as motion sensor.

In addition, the transmissivity of the near infrared light area that light shield layer 3 is respective from black matrix 2 is different, and therefore, the aligning (contraposition) in manufacturing process such as can be aimed at by the light of the wavelength of 800nm.Frame portion that the formation pattern of the light shield layer 3 of present embodiment can surround as 4 limits of the surrounding by comprising multiple peristome, that have high light-proofness uses.Also the mark of contraposition can be pre-formed on the transparent substrate by light shield layer 3.

< the 3rd embodiment >

3rd embodiment is the one embodiment of the present invention first forming black matrix 2 before the pattern forming the pattern of red color layer R, the pattern of green layer G, cyan coloring layer B.

The partial section of the liquid crystal indicator of the 3rd embodiment has been shown in Figure 13.

The liquid crystal molecule of the liquid crystal layer 6 of the 3rd embodiment is initial orientation is vertical orientated liquid crystal, driven by the voltage be applied between opposite electrode (common electrode) 52 and pixel electrode 51, topple over to horizontal direction when voltage applies, make Transmission light.Polarization plates is set to normally closed by cross Nicols structure.

When not for the purpose of color separated for the purpose of the touch-sensing utilizing infrared, also can omit the arranging of the 2nd optical sensor S2.When for the purpose of the touch-sensing utilizing near infrared light area, only any one overlapping portion overlapping with black matrix 2 of the pattern of the pattern of the pattern of red color layer R, green layer G, cyan coloring layer B is disposed in the 1st optical sensor S1.1st optical sensor S1 such as can to form one in 1 pixel, or in 3 pixels, 6 pixels, form the mode of formed with various density.

The illustration > of < constituent material

Below, the constituent material example in each component of the above-mentioned liquid-crystal apparatus shown in each embodiment is described.

(transparent resin)

The colored filter that black matrix 2, light shield layer 3 and the pattern of pixels by red color layer R, green layer G, cyan coloring layer B are formed form used photosensitive color constituent, except pigment dispersion (hereinafter referred to as paste), also containing multi-functional monomer, photoresist or non-photosensitive resin, polymerization initiator, solvent etc.Such as, the organic resin that the transparency that the photoresist and non-photosensitive resin etc. that use of present embodiment is such is high is commonly referred to as transparent resin.

As transparent resin, thermoplastic resin, heat-curing resin or photoresist can be used.As thermoplastic resin, such as, can use butyral resin, phenylacetic acid-maleic acid, haloflex, chlorinated polypropylene, Polyvinylchloride, vinyl chloride vinyl acetate copolymer, polyvinyl acetate, urethane resin, vibrin, acrylic resin, alkyd resin, polystyrene resin, polyamide, rubber series resin, thermoprene system resin, cellulose family, butadiene, tygon, polypropylene, polyimide resin etc.As heat-curing resin, such as, can use epoxy resin, benzoguanamine resin, Abietyl modified maleic acid resin, Abietyl modified fumaric resin, melmac, urea resin, phenolics etc.Heat-curing resin also can make melmac and react containing the compound of isocyanate group to generate.

(alkali soluble resin)

In the formation of the light shield layer 3 involved by present embodiment and black matrix 2, the 1st transparent resin layer 12, the 2nd transparent resin layer 11, colored filter, preferably use the photosensitive resin composition that can be formed pattern by photoetching.These transparent resins are not preferably endowed the resin of alkali-soluble.As alkali soluble resin, the resin containing carboxyl or hydroxyl can be used, also can use other resins.As alkali soluble resin, such as, can use epoxy acrylate system resin, novolaks system resin, polyvinylphenol system resin, acrylic resin, carboxylic epoxy resin, carboxylic urethane resin etc.In the middle of these resins, as alkali soluble resin, preferably use epoxy acrylate system resin, novolaks system resin, acrylic resin, particularly preferably epoxy acrylate system resin or novolaks system resin.

(acryl resin)

As the representative of the transparent resin that can use in present embodiment, the acrylic resin below example.

As acrylic resin, can use the polymkeric substance utilizing following monomer to obtain, this monomer is such as: (methyl) acrylic acid; (methyl) alkyl acrylates such as (methyl) methyl acrylate, (methyl) ethyl acrylate, (methyl) propyl acrylate, (methyl) butyl acrylate, (methyl) tert-butyl acrylate, (methyl) benzyl acrylate, (methyl) lauryl acrylate; (methyl) acrylate of the hydroxyls such as (methyl) hydroxy-ethyl acrylate, (methyl) hydroxypropyl acrylate; (methyl) acrylic acid epoxy base ethyl ester, (methyl) glycidyl acrylate etc. are containing (methyl) acrylate of ether; And ester ring type (methyl) acrylate etc. such as (methyl) cyclohexyl acrylate, (methyl) isobornyl acrylate, (methyl) acrylic acid dicyclopentenyl ester.

In addition, these exemplified monomers can be used alone, or can adopt two or more simultaneously.

And acryl resin can use containing generating with the multipolymer of the compound such as the phenylacetic acid of the monomer copolymerization of these materials, N-cyclohexylmaleimide or phenyl maleimide.In addition, such as, can the compound containing epoxy radicals and unsaturated double-bond such as the multipolymer that obtains and glycidyl methacrylate reacts by making that (methyl) acrylic acid etc. has the carboxyl acid copolymer of ethylenically unsaturated group, generation has photosensitive resin, obtains acryl resin.Such as, can by making the polymkeric substance of (methyl) acrylate containing epoxy radicals such as glycidyl methacrylate or its polymkeric substance and other (methyl) acrylic acid multipolymer and (methyl) acrylic acid etc. containing the compound addition of carboxylic acid, generation has photosensitive resin, forms acryl resin.

(organic pigment)

As red pigment, such as can use C.I.PigmentRed7,9,14,41,48:1,48:2,48:3,48:4,81:1,81:2,81:3,97,122,123,146,149,168,177,178,179,180,184,185,187,192,200,202,208,210,215,216,217,220,223,224,226,227,228,240,242,246,254,255,264,272,279 etc.

As yellow uitramarine, such as C.I.PigmentYellow1 can be used, 2, 3, 4, 5, 6, 10, 12, 13, 14, 15, 16, 17, 18, 20, 24, 31, 32, 34, 35, 35:1, 36, 36:1, 37, 37:1, 40, 42, 43, 53, 55, 60, 61, 62, 63, 65, 73, 74, 77, 81, 83, 86, 93, 94, 95, 97, 98, 100, 101, 104, 106, 108, 109, 110, 113, 114, 115, 116, 117, 118, 119, 120, 123, 125, 126, 127, 128, 129, 137, 138, 139, 144, 146, 147, 148, 150, 151, 152, 153, 154, 155, 156, 161, 162, 164, 166, 167, 168, 169, 170, 171, 172, 173, 174, 175, 176, 177, 179, 180, 181, 182, 185, 187, 188, 193, 194, 199, 213, 214 etc.

As blue pigment, such as, can use C.I.PigmentBlue15,15:1,15:2,15:3,15:4,15:6,16,22,60,64,80 etc.In addition, the half value wavelength of C.I.PigmentBlue15:3 in infrared is near 760nm.Such as, by the pigment that adds C.I.PigmentBlue15:3 on a small quantity such, half value wavelength is in the pigment of the wavelength zone of 700nm to 800nm, can by the half value wavelength of black matrix 2 to such as than 680nm by long wavelength side adjustment.

As violet pigment, such as, can use C.I.PigmentViolet1,19,23,27,29,30,32,37,40,42,50 etc., preferred C.I.PigmentViolet23 in these pigment.

As viridine green, such as can use C.I.PigmentGreen1,2,4,7,8,10,13,14,15,17,18,19,26,36,45,48,50,51,54,55,58 etc., in these pigment, preferably as the C.I.PigmentGreen58 of halogenated ZnPc viridine green.As viridine green, halogenated aluminium phthalocyanine color also can be used.

(the look material of light shield layer and black matrix)

The look material of the light-proofness comprised in light shield layer 3 and black matrix 2 has absorbability at visible wavelength region and possesses the look material of shade function.In present embodiment light-proofness look material in, such as can use organic pigment, inorganic pigment, dyestuff etc.Pay attention to the look material of the radioparent black matrix 2 of infrared of light preferably based on organic pigment.As the look material of light shield layer 3, such as, carbon black, titanium dioxide etc. can be used.As the dyestuff that can comprise in light shield layer 3 and black matrix 2, such as, can use azo based dye, anthraquinone based dye, phthalocyanine based dye, quinone imines based dye, quinoline based dye, nitro based dye, carbonyl based dye, methine based dye etc.Organic pigment such as also can apply above-mentioned organic pigment.In addition, the look material of these light-proofnesss can use a kind, also can use two or more with suitable ratio combine.

Such as, visible wavelength district is the scope of about optical wavelength 400nm ~ 700nm.

The wavelength of the transmissivity rising of the black matrix 2 involved by present embodiment is in light wave and is about the region that 680nm ~ light wave is about 800nm.At this, be about 680nm place at light wave, the transmissivity of red color layer is maintained higher.Optical wavelength 800nm is the rising part that the transmissivity of cyan coloring layer uprises.

(example of the black anti-corrosion agent of applying in light shield layer)

The modulation example of the black paste used in light shield layer (dispersion) is described.

The potpourri of following composition is uniformly mixed equably, is stirred by bead dispersion machine, make black paste.Each composition mass parts represents.

Carbon pigment 20 parts

Spreading agent 8.3 parts

Copper phthalocyanine derivative thing 1.0 parts

Propylene glycol methyl ether acetate 71 parts

Use above-mentioned black paste, the potpourri of following composition is uniformly mixed equably, filter with the filter screen of 5 μm, modulate the black anti-corrosion agent that can be applied to frame portion 1.In present embodiment, so-called resist, refers to the photosensitive color constituent comprising carbon or pigment.

Black paste 25.2 parts

Acrylic resin soln 18 parts

Pentaerythrite five and six acrylate 5.2 parts

Photoepolymerizationinitiater initiater 1.2 parts

Sensitizer 0.3 part

Levelling agent 0.1 part

Cyclohexanone 25 parts

Propylene glycol methyl ether acetate 25 parts

In present embodiment and the respective embodiments described above, the mass-tone material in black anti-corrosion agent or colored resist refers to, relative to the look material comprised in this resist all-mass ratio (%) and occupy more than 50% look material.Such as, in black anti-corrosion agent, carbon occupies 100% of look material, and carbon becomes mass-tone material.In addition, be in the black anti-corrosion agent of mass-tone material with carbon, in order to adjust its tone or reflected colour, also can become the degree of less than 10% to add the organic pigment of redness, yellow, blueness etc. in all-mass ratio.

(example of the black anti-corrosion agent used in black matrix)

The mixing example of the organic pigment used in black matrix 2 is below shown.

C.I. paratonere 254 (hereinafter referred to as R254)

C.I. pigment yellow 185 (hereinafter referred to as Y185)

C.I. pigment Violet 23 (hereinafter referred to as V23)

In the middle of these 3 kinds of pigment, also can remove certain pigment in Y139 or R254.And, also can outside these 3 kinds of pigment, in order to carry out color (transmission peak wavelength) adjustment with the pigment adding other kinds of trace on a small quantity of below 30 quality %, organic pigment as escribed above.Such as in order to the adjustment (adjustment of light splitting curve shape) of the rising of the dichroism near optical wavelength 700nm, and can by halogenated ZnPc pigment, halogenated copper phthalocyanine, halogenated aluminium phthalocyanine color or C.I pigment blue 15: 3 use with the amount below 30% quality.

Be preferably, the transmissivity of black matrix 2 in visible region is less than 5%.Visible region is generally light wave and is about 400nm ~ 700nm.Wavelength in order to the half value by black matrix 2 is set as the scope of optical wavelength 670nm ~ 750nm, needs from light wave is about near 660nm, make infrared transmitting rate characteristic increase, and uprises in long wavelength side transmission characteristics.The wavelength coverage of the low transmissivity of black matrix 2 also can be set to the scope that light wave is about 400nm ~ 650nm.In addition, by the amount of pigment that contains in organic pigment light shield layer 14 or the thickness thickening black matrix 2, the low value transmissivity of black matrix 2 being set to less than 5% in the scope of about optical wavelength 400nm ~ 650nm can extremely easily be realized.

The wavelength location of half value wavelength too, easily can adjust based on the thickness etc. of the ratio of components of the amount of pigment, violet pigment described later, viridine green, yellow uitramarine, red pigment, blue pigment, black matrix 2.As the viridine green being applied to black matrix 2, various viridine green described later can be applied.In order to the half value wavelength of black matrix 2 being set as the scope of optical wavelength 680nm ~ 800nm, as viridine green, blue pigment, the rising (such as, half value wavelength) of preferred infrared transmitting rate is in the pigment of the scope of optical wavelength 680nm ~ 800nm.For half value wavelength being set as the scope of optical wavelength 680nm ~ 800nm and the adjustment carried out mainly realizes based on violet pigment and viridine green.In order to regulate the dichroism of black matrix 2, also blue pigment can be added with.If replace the violet pigment of the mixing example of above-mentioned organic pigment and use described blue pigment, then half value wavelength can be adjusted to about 800nm.

The quality ratio (%) of R254 such as also can belong to the scope of 15 ~ 40%.

The quality ratio (%) of Y185 such as also can belong to the scope of 10 ~ 30%.

The quality ratio (%) of V23 such as also can belong to the scope of 75 ~ 30%.

By also adding described viridine green or blue pigment, the quality ratio of V23 in overall pigment can be reduced.

Be such as in the thickness of 1 μm of front and back at the thickness of black matrix 2, the violet pigment of V23 is added into black matrix 2 with the arbitrary value of the scope of 75 ~ 30%.Thus, black matrix 2 has half value wavelength than optical wavelength 670nm by long wavelength side.By the organic pigment of yellow being set to any addition in 10 ~ 30% and the organic pigment of redness being added 15 ~ 40% and mixes, thereby, it is possible to reduce the transmissivity of the optical wavelength 400nm ~ 660nm of black matrix 2 fully.Uprise a little (preventing the transmissivity of black matrix B M from uprising a little relative to the datum line of the transmissivity 0% in dichroism) by preventing the transmissivity of organic pigment light shield layer 14 in the scope of optical wavelength 400nm ~ 660nm, thus, by deducting the light data of the 2nd optical sensor S2 in the light data from the 1st optical sensor S1, correct color separated can be carried out.In addition, the transmissivity of half value wavelength and black matrix 2 can be adjusted by the thickness of black matrix 2.

Usually, before generating colored resist (colored composition) based on these pigment, pigment is dispersed in resin or solution, generates pigment paste (dispersion liquid).Such as, in order to by pigment Y185 monomer dispersion to resin or solution, relative to 7 parts (mass parts) of pigment Y185, mix following material.

Acrylic resin soln (solid divides 20%) 40 parts

Spreading agent 0.5 part

Cyclohexanone 23.0 parts

In addition, the pigment that V23, R254 etc. are such also can be distributed to the pigment dispersion paste agent generating black in identical resin or solution.

Below, example is used for the ratio of components generating black anti-corrosion agent 2 based on above-mentioned pigment dispersion paste agent.

Y139 paste 14.70 parts

V23 paste 20.60 parts

Acrylic resin soln 14.00 parts

Alkaline monomer 4.15 parts

Initiating agent 0.7 part

Sensitizer 0.4 part

Cyclohexanone 27.00 parts

PGMAC10.89 part

By above-mentioned ratio of components, generate the black anti-corrosion agent used in black matrix 2.

The black anti-corrosion agent of the mass-tone material as pigment used in the formation of black matrix 2 is, relative to all-mass than the violet pigment V23 occupying about 58%.The great majority of organic pigment have high transmissivity being about the region of 800nm by long wavelength than light wave.Yellow uitramarine Y139 is leaning on the region of long wavelength to have the organic pigment of high transmissivity than optical wavelength 800nm.

Such as, the mass-tone material of black anti-corrosion agent also can be set to the organic pigment of 100%.Or, using organic pigment as in the black anti-corrosion agent 2 of mass-tone material, in order to adjust light-proofness, also can with the degree of less than 40% of all-mass add carbon.

The above-mentioned painted resist containing black anti-corrosion agent is coated on transparency carrier, pattern formation can be carried out by the operation of known photoetching.Or, such as, use the photonasty resist of novolaks system, carry out pattern formation by the gimmick of dry-etching.

In the black anti-corrosion agent taking carbon as body pigment, except frame portion, be also formed with alignment mark in the lump, the aligning after using this alignment mark can realize the coating of black anti-corrosion agent.Alignment mark as shown in Figure 5, such as, utilizes the difference of the transmissivity at the wavelength 850nm place of light, uses infrared camera etc. to be identified.

Liquid crystal indicator involved by embodiments of the present invention can carry out various application.Can be used as the electronic equipment of object as liquid crystal indicator of the present invention, such as, can list mobile phone, portable game machine, portable data assistance, personal computer, e-book, video camera, digital camera, head installation display, navigational system, apparatus, acoustic reproducing (car audio, digital audio-frequency player etc.), duplicating machine, facsimile recorder, printer, printer compounding machine, automatic vending machine, cash banding machine (ATM), personal verification's equipment, optical communication equipment etc.

The explanation of Reference numeral

2 ... black matrix, 3 ... light shield layer, 4, 11 ... 2nd transparent resin layer, 6 ... liquid crystal layer, 10 ... 1st transparency carrier, 12 ... 1st transparent resin layer (transparent resin layer), 13 ... backlight unit, 14 ... display part, 15 ... polarization plates, 16 ... indicator, 20 ... peristome (pixel openings portion), 21 ... upper electrode, 22 ... lower electrode, 24 ... metal line, 25 ... pseudo-pattern (metal level), 30 ... 2nd transparency carrier, 33 ... insulation course, 34 ... handling part, 35, 36, 37 ... amorphous silicon, 31, 51 ... pixel electrode, 32 ... common electrode, 52 ... opposite electrode (common electrode), 100 ... base board for display device (counter substrate), 200 ... liquid crystal cells, 300 ... array base palte, 400 ... liquid crystal indicator, R ... red color layer, G ... green layer, B ... cyan coloring layer, S1 ... 1st optical sensor, S2 ... 2nd optical sensor.

Claims (amendment according to treaty the 19th article)

1. [after amendment] a kind of liquid crystal indicator, has liquid crystal cells,

This liquid crystal cells has:

Counter substrate, has the 1st transparency carrier, at least sequentially laminated with the black matrix with multiple pixel openings portion on described 1st transparency carrier; And transparent resin layer; And

Array base palte, has the 2nd transparency carrier, described 2nd transparency carrier is at least equipped: optical sensor; Multiple active components of oxide semiconductor are possessed as channel layer; Metal line; With pseudo-pattern;

Described counter substrate and described array base palte are relatively fitted across liquid crystal layer and are formed this liquid crystal cells,

Described black matrix has the transmissison characteristic that transmissivity in the determined wavelength district of above below the 800nm of wavelength 680nm of light becomes more than 50%, wavelength when becoming more than 50% than described transmissivity becomes higher transmissivity by long wavelength side,

Described sensor has the sensitivity district comprising described determined wavelength district, and than the position of described active component near described liquid crystal layer, is formed as overlapping with described black matrix when overlooking from described counter substrate,

The top layer of at least described metal line and described pseudo-pattern is made up of copper or aldary, and described metal line and described pseudo-pattern are formed as the region landfill overlapping with described optical sensor when overlooking from described counter substrate.

2. a liquid crystal indicator, has liquid crystal cells,

This liquid crystal cells has:

Counter substrate, has the 1st transparency carrier, on described 1st transparency carrier at least sequentially laminated with: there is multiple pixel openings portion and the light of visible region and infrared carried out to the light shield layer of shading; Red color layer, green layer, the colored pixels of cyan coloring layer and the colored filter formed is possessed respectively in described multiple pixel openings portion; Black matrix; And transparent resin layer; And

Array base palte, has the 2nd transparency carrier, described 2nd transparency carrier is at least equipped: optical sensor; Multiple active components of oxide semiconductor are possessed as channel layer; And metal line;

Described counter substrate and described array base palte are relatively fitted across liquid crystal layer and are formed this liquid crystal cells,

Described black matrix has the transmissison characteristic that transmissivity in the determined wavelength district of above below the 800nm of wavelength 680nm of light becomes more than 50%, wavelength when becoming more than 50% than described transmissivity becomes higher transmissivity by long wavelength side, and, have and any one the overlapping overlapping portion in described red color layer, described green layer, described cyan coloring layer

Described sensor has the sensitivity district comprising described determined wavelength district, than the position of described active component near described liquid crystal layer, is formed as overlapping with described black matrix when overlooking from described counter substrate,

At least top layer of described metal line is made up of copper or aldary, and described metal line is formed as the region landfill overlapping with described optical sensor when overlooking from described counter substrate.

3. a liquid crystal indicator, possesses liquid crystal cells,

This liquid crystal cells has:

Counter substrate, has the 1st transparency carrier, at least sequentially laminated with the black matrix with multiple pixel openings portion on described 1st transparency carrier; Red color layer, green layer, the colored pixels of cyan coloring layer and the colored filter formed is possessed respectively in described multiple pixel openings portion; And transparent resin layer; And

Array base palte, has the 2nd transparency carrier, described 2nd transparency carrier is at least equipped: optical sensor; Multiple active components of oxide semiconductor are possessed as channel layer; And metal line;

Described counter substrate and described array base palte are relatively fitted across liquid crystal layer and are formed this liquid crystal cells,

Described black matrix has the transmissison characteristic that transmissivity in the determined wavelength district of above below the 800nm of wavelength 680nm of light becomes more than 50%, wavelength when becoming more than 50% than described transmissivity becomes higher transmissivity by long wavelength side, and, have and any one the overlapping overlapping portion in described red color layer, described green layer, described cyan coloring layer

Described sensor has the sensitivity district comprising described determined wavelength district, than the position of described active component near described liquid crystal layer, is formed as overlapping with described black matrix when overlooking from described counter substrate,

At least top layer of described metal line is made up of copper or aldary, and described metal line is formed as the region landfill overlapping with described optical sensor when overlooking from described counter substrate.

4. liquid crystal indicator as claimed any one in claims 1 to 3,

Multiple organic pigment is contained as mass-tone material in described black matrix.

5. the liquid crystal indicator according to any one of Claims 1-4,

Described oxide semiconductor is the composite metal oxide of more than two kinds being selected from gallium, indium, zinc, hafnium, tin, yttrium, titanium, germanium, silicon.

6. liquid crystal indicator as claimed in claim 2 or claim 3,

Described colored filter in the described red color layer position overlapping with described black matrix, each position of the described green layer position overlapping with described black matrix, the described cyan coloring layer position overlapping with described black matrix has described overlapping portion,

Described optical sensor, when overlooking, is disposed in described red color layer, described green layer, the bottom of each colored pixels of described cyan coloring layer, the bottom of described overlapping portion respectively.

7. the liquid crystal indicator according to any one of claim 1 to 6,

Also possess backlight unit, this backlight unit is arranged at described liquid crystal cells with described counter substrate opposition side, sends the light of at least long than 680nm wavelength zone.

8. the liquid crystal indicator according to any one of claim 1 to 5,7,

Also possess optical sensor, this optical sensor is formed as overlapping with described pixel openings portion when overlooking from described counter substrate, at least has sensitivity district in visible region.

Claims (8)

1. a liquid crystal indicator, has liquid crystal cells,

This liquid crystal cells has:

Counter substrate, has the 1st transparency carrier, at least sequentially laminated with the black matrix with multiple pixel openings portion on described 1st transparency carrier; And transparent resin layer; And

Array base palte, has the 2nd transparency carrier, described 2nd transparency carrier is at least equipped: optical sensor; Multiple active components of oxide semiconductor are possessed as channel layer; And metal line;

Described counter substrate and described array base palte are relatively fitted across liquid crystal layer and are formed this liquid crystal cells,

Described black matrix has the transmissison characteristic that transmissivity in the determined wavelength district of above below the 800nm of wavelength 680nm of light becomes more than 50%, wavelength when becoming more than 50% than described transmissivity becomes higher transmissivity by long wavelength side,

Described sensor has the sensitivity district comprising described determined wavelength district, and than the position of described active component near described liquid crystal layer, is formed as overlapping with described black matrix when overlooking from described counter substrate,

At least top layer of described metal line is made up of copper or aldary, and described metal line is formed as the region landfill overlapping with described optical sensor when overlooking from described counter substrate.

2. a liquid crystal indicator, has liquid crystal cells,

This liquid crystal cells has:

Counter substrate, has the 1st transparency carrier, on described 1st transparency carrier at least sequentially laminated with: there is multiple pixel openings portion and the light of visible region and infrared carried out to the light shield layer of shading; Red color layer, green layer, the colored pixels of cyan coloring layer and the colored filter formed is possessed respectively in described multiple pixel openings portion; Black matrix; And transparent resin layer; And

Array base palte, has the 2nd transparency carrier, described 2nd transparency carrier is at least equipped: optical sensor; Multiple active components of oxide semiconductor are possessed as channel layer; And metal line;

Described counter substrate and described array base palte are relatively fitted across liquid crystal layer and are formed this liquid crystal cells,

Described black matrix has the transmissison characteristic that transmissivity in the determined wavelength district of above below the 800nm of wavelength 680nm of light becomes more than 50%, wavelength when becoming more than 50% than described transmissivity becomes higher transmissivity by long wavelength side, and, have and any one the overlapping overlapping portion in described red color layer, described green layer, described cyan coloring layer

Described sensor has the sensitivity district comprising described determined wavelength district, than the position of described active component near described liquid crystal layer, is formed as overlapping with described black matrix when overlooking from described counter substrate,

At least top layer of described metal line is made up of copper or aldary, and described metal line is formed as the region landfill overlapping with described optical sensor when overlooking from described counter substrate.

3. a liquid crystal indicator, possesses liquid crystal cells,

This liquid crystal cells has:

Counter substrate, has the 1st transparency carrier, at least sequentially laminated with the black matrix with multiple pixel openings portion on described 1st transparency carrier; Red color layer, green layer, the colored pixels of cyan coloring layer and the colored filter formed is possessed respectively in described multiple pixel openings portion; And transparent resin layer; And

Array base palte, has the 2nd transparency carrier, described 2nd transparency carrier is at least equipped: optical sensor; Multiple active components of oxide semiconductor are possessed as channel layer; And metal line;

Described counter substrate and described array base palte are relatively fitted across liquid crystal layer and are formed this liquid crystal cells,

Described black matrix has the transmissison characteristic that transmissivity in the determined wavelength district of above below the 800nm of wavelength 680nm of light becomes more than 50%, wavelength when becoming more than 50% than described transmissivity becomes higher transmissivity by long wavelength side, and, have and any one the overlapping overlapping portion in described red color layer, described green layer, described cyan coloring layer

Described sensor has the sensitivity district comprising described determined wavelength district, than the position of described active component near described liquid crystal layer, is formed as overlapping with described black matrix when overlooking from described counter substrate,

At least top layer of described metal line is made up of copper or aldary, and described metal line is formed as the region landfill overlapping with described optical sensor when overlooking from described counter substrate.

4. liquid crystal indicator as claimed any one in claims 1 to 3,

Multiple organic pigment is contained as mass-tone material in described black matrix.

5. the liquid crystal indicator according to any one of Claims 1-4,

Described oxide semiconductor is the composite metal oxide of more than two kinds being selected from gallium, indium, zinc, hafnium, tin, yttrium, titanium, germanium, silicon.

6. liquid crystal indicator as claimed in claim 2 or claim 3,

Described colored filter in the described red color layer position overlapping with described black matrix, each position of the described green layer position overlapping with described black matrix, the described cyan coloring layer position overlapping with described black matrix has described overlapping portion,

Described optical sensor, when overlooking, is disposed in described red color layer, described green layer, the bottom of each colored pixels of described cyan coloring layer, the bottom of described overlapping portion respectively.

7. the liquid crystal indicator according to any one of claim 1 to 6,

Also possess backlight unit, this backlight unit is arranged at described liquid crystal cells with described counter substrate opposition side, sends the light of at least long than 680nm wavelength zone.

8. the liquid crystal indicator according to any one of claim 1 to 5,7,

Also possess optical sensor, this optical sensor is formed as overlapping with described pixel openings portion when overlooking from described counter substrate, at least has sensitivity district in visible region.