CN105339834A - Liquid crystal display device - Google Patents

Abstract

The liquid crystal display device of the present invention is equipped with a liquid crystal unit, and the liquid crystal unit has: an opposite substrate (100), provided with a black matrix (2) having a plurality of pixel openings; and an array substrate (300), equipped with an optical sensor (S1 ), active components, and metal wiring; a liquid crystal layer is sandwiched between two substrates (100, 300); % or more, the transmission characteristic becomes a higher transmittance on the longer wavelength side than that. The photosensor (S1) has a sensitivity region including the detection wavelength region, and is formed to overlap the black matrix (2) in plan view at a position closer to the liquid crystal layer than the active element. At least a surface layer of the metal wiring is made of copper or a copper alloy, and is formed to fill a region overlapping with the photosensor (S1) in plan view.

Description

Liquid crystal display device

technical field

The present invention relates to a liquid crystal display device including a photosensor, and particularly to a liquid crystal display device capable of improving the sensitivity of the photosensor in the infrared region.

this application claims priority based on Japanese Patent Application No. 2013-142043 for which it applied to Japan on July 5, 2013, and uses the content here.

Background technique

As a means of directly inputting selection information or the like from a display screen of a liquid crystal display device, in recent years, a capacitive method using a touch panel has been widely used. A touch panel is generally used by being attached to a display screen of a liquid crystal display device or the like.

However, the touch panel has a problem that it is difficult for an observer who is far away from the display screen to operate it. In addition, the thickness and weight of the touch panel are added to the display device, and therefore, the touch panel hinders thinning and weight reduction in small devices such as mobile phones and tablet PCs.

Therefore, in order to enable an observer located far from the display screen to operate, it has been considered to provide an optical sensor inside the liquid crystal display device and perform detection by the optical sensor. In addition, liquid crystal display devices provided with photosensors are expected to achieve correct color separation in the fields of imaging, color copying, optical communication, and the like.

For example, Patent Document 1 discloses an input technology for inputting from a screen using a color filter substrate having a detection filter and a photosensor, and using visible light as a first wavelength and invisible light as a second wavelength. . Specifically, in order to solve the problem of increasing the number of steps due to additionally providing an infrared filter that transmits infrared light, which is invisible light, the technique of overlaying the colors of the color filters is described.

However, in the structure in which the colors of the color filters described in Patent Document 1 overlap, there is a possibility that an inappropriate level difference in liquid crystal alignment may occur. In addition, in a structure in which the colors of the color filters overlap, the transmission region of the detection color filter (infrared filter) is 800 nm or less, and this structure is not suitable for color separation of red, green, and blue. Specifically, there is a problem that light in a wavelength range from around 680 nm to around 800 nm cannot be separated satisfactorily.

Also, for example, Patent Document 2 discloses a technique of disposing a transistor at a position overlapping with a photodiode. However, the technology described in Patent Document 2 is a technology for producing a display device at low cost or reducing its size and weight, and there is no disclosure at all about the sensitivity improvement technology of a photodiode as a photosensor, nor does it disclose a transistor or a photodiode. Diode wiring technology, oxide semiconductor technology.

In addition, for example, Patent Document 3 discloses a technology of an active matrix display substrate including thin film transistors. However, in Patent Document 3, neither the technology for improving the sensitivity of the photosensor nor the technology for oxide semiconductors is disclosed. In addition, Patent Document 3 describes wet etching of copper or an alloy containing copper using an aqueous alkaline solution containing an oxidizing agent.

However, as disclosed in Patent Document 3, it is difficult to perform wet etching without damaging amorphous silicon constituting a field effect transistor (TFT, Thin-Film Transistor). In addition, when performing dry etching on copper or an alloy containing copper, contamination by copper ions is serious, and it is more difficult to perform dry etching without damaging amorphous silicon. In addition, the channel part may be contaminated by dry etching during the formation of the channel layer of amorphous silicon, and the copper wiring technology in the TFT process of the amorphous silicon semiconductor has not been put into practical use.

Prior art literature

patent documents

Patent Document 1: Japanese Patent Laid-Open No. 2009-129397

Patent Document 2: Japanese Patent Laid-Open No. 2013-008991

Patent Document 3: Japanese Patent Application Laid-Open No. 10-307303

Contents of the invention

The problem to be solved by the invention

The present invention has been made in view of such conventional circumstances, and an object of the present invention is to provide a liquid crystal display device that uses photodetection and is excellent in sensitivity.

means of solving problems

In order to solve the above-mentioned problems, some aspects of the present invention provide the following liquid crystal display devices.

A liquid crystal display device according to a first aspect of the present invention has a liquid crystal cell having a counter substrate and a first transparent substrate on which at least black pixels having a plurality of pixel openings are sequentially laminated. matrix; and a transparent resin layer; and an array substrate having a second transparent substrate on which at least: an optical sensor; a plurality of active elements including an oxide semiconductor as a channel layer; and Metal wiring; the opposite substrate and the array substrate are bonded oppositely through the liquid crystal layer to form the liquid crystal cell, and the black matrix has a transmittance of 50 in the detection wavelength region of the wavelength of light from 680 nm to 800 nm % or more, and a higher transmittance on the longer wavelength side than the wavelength at which the transmittance becomes 50% or more, the sensor has a sensitivity region including the detection wavelength region, and has The position of the source element close to the liquid crystal layer is formed so as to overlap the black matrix when viewed from the opposite substrate, at least the surface layer of the metal wiring is made of copper or copper alloy, and the metal wiring is formed so as to be viewed from the opposite substrate. A region overlapping with the photosensor is buried in the counter substrate in plan view.

A liquid crystal display device according to a second aspect of the present invention includes a liquid crystal cell having a counter substrate and a first transparent substrate on which at least a plurality of pixel openings and opposite A light-shielding layer that shields light in the visible light region and infrared region; a color filter composed of colored pixels with a red layer, a green layer, and a blue layer respectively provided in the plurality of pixel openings; a black matrix; and a transparent resin layer and an array substrate having a second transparent substrate on which at least: an optical sensor; a plurality of active elements having an oxide semiconductor as a channel layer; and metal wiring; The opposing substrate and the array substrate are bonded to face each other through the liquid crystal layer to form the liquid crystal cell, and the black matrix has a transmittance of 50% or more in the detection wavelength range of light wavelengths from 680 nm to 800 nm, and in a ratio of 50% to 800 nm. When the transmittance becomes 50% or more, the transmittance becomes higher on the longer wavelength side, and there is overlap with any one of the red layer, the green layer, and the blue layer. The sensor has a sensitivity region including the detection wavelength region, and is formed to overlap the black matrix when viewed from the opposite substrate at a position closer to the liquid crystal layer than the active element, so that At least a surface layer of the metal wiring is formed of copper or a copper alloy, and the metal wiring is formed to fill a region overlapping with the photosensor when viewed from above the counter substrate.

A liquid crystal display device according to a third aspect of the present invention includes a liquid crystal cell having a counter substrate and a first transparent substrate on which at least black pixels having a plurality of pixel openings are sequentially laminated. a matrix; a color filter composed of colored pixels of a red layer, a green layer, and a blue layer in the plurality of pixel openings; and a transparent resin layer; and an array substrate having a second transparent substrate. The second transparent substrate is provided with at least: a photosensor; a plurality of active elements including an oxide semiconductor as a channel layer; and metal wiring; the opposing substrate and the array substrate are opposed to each other via a liquid crystal layer The liquid crystal cell is formed by pasting, and the black matrix has a transmittance of 50% or more in a detection wavelength range of light wavelengths of 680 nm to 800 nm, and a wavelength on the longer wavelength side than the transmittance of 50% or more. The transmission characteristic becomes higher transmittance, and has an overlapping portion with any one of the red layer, the green layer, and the blue layer, and the sensor has sensitivity including the detection wavelength region. A region is formed at a position closer to the liquid crystal layer than the active element so as to overlap the black matrix when viewed from the opposite substrate, and at least a surface layer of the metal wiring is made of copper or a copper alloy, so The metal wiring is formed to fill a region overlapping with the photosensor when viewed from above the counter substrate.

In the liquid crystal display device of the above aspect of the present invention, it is preferable that the black matrix contains a plurality of organic pigments as the main color material.

In the liquid crystal display device of the above aspect of the present invention, the oxide semiconductor is preferably a composite metal oxide of two or more selected from gallium, indium, zinc, hafnium, tin, yttrium, titanium, germanium, and silicon.

In the liquid crystal display device of the above aspect of the present invention, it is preferable that the color filter is located at a position where the red layer overlaps with the black matrix, a position where the green layer overlaps with the black matrix, and a position where the blue layer overlaps with the black matrix. Each position where the colored layer overlaps with the black matrix has the overlapping portion, and the photosensor is respectively arranged on each of the colored layers of the red layer, the green layer, and the blue layer when viewed from above. The lower part of the pixel, the lower part of the overlapping part.

In the liquid crystal display device of the above aspect of the present invention, it is preferable to further include a backlight unit that is provided on the opposite side of the liquid crystal cell to the counter substrate and emits light in a wavelength region longer than at least 680 nm. .

In the liquid crystal display device according to the above aspect of the present invention, it is preferable to further include a photosensor formed so as to overlap the pixel opening in a plan view from the counter substrate and having a sensitivity region at least in the visible light region.

Invention effect

According to the liquid crystal display device of the present invention, it is possible to provide a liquid crystal display device that uses light detection and is excellent in sensitivity.

Description of drawings

FIG. 1 is a graph showing reflection characteristics of metals with respect to wavelengths.

FIG. 2 is an enlarged cross-sectional view showing a main part of the liquid crystal display device according to the first embodiment of the present invention.

3 is a partial plan view showing a plurality of pixel openings of the liquid crystal display device according to the first embodiment of the present invention.

4 is a schematic cross-sectional view showing the liquid crystal display device according to the first embodiment of the present invention.

FIG. 5 is a graph showing wavelength selective transmission characteristics of a black matrix.

Fig. 6 is a cross-sectional view along line AA' of Fig. 1 .

7 is a partial plan view showing a plurality of pixel openings of a liquid crystal display device according to a second embodiment of the present invention.

8 is a schematic cross-sectional view showing a liquid crystal display device according to a second embodiment of the present invention.

9 is an enlarged cross-sectional view of a main part showing a liquid crystal display device according to a second embodiment of the present invention.

FIG. 10 is a graph showing the transmission characteristics of the green layer and the transmission characteristics obtained by superimposing the transmission characteristics of the green layer and the black matrix.

11 is a graph showing the transmission characteristics of a red layer and the transmission characteristics obtained by superimposing the transmission characteristics of a red layer and a black matrix.

FIG. 12 is a graph showing the transmission characteristics of the blue layer and the transmission characteristics obtained by superimposing the transmission characteristics of the blue layer and the black matrix.

13 is a partial cross-sectional view showing a liquid crystal display device according to a third embodiment.

detailed description

Hereinafter, embodiments of a liquid crystal display device according to the present invention will be described with reference to the drawings. In addition, the embodiment shown below is an aspect specifically described for a better understanding of the gist of the invention, but it is not limited to the specified aspect and does not limit the present invention. In addition, in the drawings used in the following description, in order to make the characteristics of the present invention more comprehensible, the main part may be shown enlarged for convenience, and the dimensional ratio of each component may not necessarily be the same as the actual one.

In the respective embodiments, the same or substantially the same functions and components are assigned the same reference numerals, and description thereof is omitted or described only when necessary. In addition, in each embodiment, only the characteristic part is demonstrated, and the description of the part which does not differ from the structural element of a well-known liquid crystal display device is abbreviate|omitted.

In each embodiment, a display unit of a liquid crystal display device is described as a pixel. A pixel is the minimum display unit of a polygon with at least 2 parallel sides divided by a black matrix. In each embodiment, a pixel and an opening of a black matrix or an opening of a light-shielding layer are almost synonymous. In each embodiment, various liquid crystal driving methods can be applied.

For example, IPS method (InPlane Switching, horizontal electric field method using horizontally aligned liquid crystal molecules), VA method (Vertically Alignment: vertical electric field method using vertically aligned liquid crystal molecules), HAN (Hybrid-aligned Nematic), TN (Twisted Nematic ), OCB (Optically Compensated Bend), CPA (Continuous Pinwheel Alignment), ECB (Electrically Controlled Birefringence), TBA (Transverse Bent Alignment), liquid crystal alignment or liquid crystal driving. The liquid crystal layer may contain liquid crystal molecules having positive dielectric constant anisotropy, or may contain liquid crystal molecules having negative dielectric constant anisotropy.

The rotation direction (operation direction) of the liquid crystal molecules when the liquid crystal driving voltage is applied may be a direction parallel to the surface of the substrate, or a direction standing perpendicular to the plane of the substrate. The direction of the liquid crystal driving voltage applied to the liquid crystal molecules may be a horizontal direction, a two-dimensionally or three-dimensionally inclined direction, or a vertical direction.

Examples of semiconductors that can be applied to the photosensor of each embodiment include: an amorphous silicon semiconductor having sensitivity in the visible light region (for example, a wavelength of light of 400 nm to 700 nm) to the infrared region, and a near-ultraviolet region or a blue wavelength. The region has a polycrystalline silicon semiconductor, a microcrystalline silicon semiconductor, a silicon germanium (SiGe) semiconductor, an oxide semiconductor typified by IGZO (registered trademark) or ITZO (registered trademark), etc., which are mainly sensitive.

In the case of using these semiconductors, it is preferable to adjust the bandgap so that the sensitivity range of the photosensor is given to the target wavelength range. In SiGe semiconductors, the bandgap can be continuously changed by the addition ratio of Ge, the wavelength of light received by the light receiving element can be adjusted, and sensitivity in the infrared region can be imparted. It can also be a SiGe semiconductor having a Ge concentration gradient. By using semiconductor compounds such as GaAs, InGaAs, PbS, PbSe, SiGe, and SiGeC, for example, an optical sensor suitable for detecting infrared light can be formed.

A liquid crystal display device incorporating a light sensor is easily affected by temperature and by a backlight unit. Compensation of the optical sensor is sometimes required to prevent input malfunctions such as fingers or lasers due to noise caused by the backlight unit or external light. When a silicon photodiode having a channel layer made of polysilicon or amorphous silicon is used as an optical sensor, dark current may be generated due to changes in ambient temperature, etc. noise.

As a switching element for driving a liquid crystal layer or a photosensor, a field effect transistor (active element, TFT) provided with an oxide semiconductor as a channel layer can be used. Here, the term "oxide semiconductor" refers to an oxide semiconductor containing at least two oxides of indium, gallium, tin, zinc, hafnium, yttrium, titanium, germanium, and silicon. As the oxide semiconductor, a composite metal oxide of indium, gallium, and zinc called IGZO can be exemplified. The channel layer formed of an oxide semiconductor may be an amorphous material or a crystallized material, and it is preferable to use a crystallized material from the viewpoint of stability of electrical characteristics (for example, Vth) of the transistor. The channel layer of the oxide semiconductor is preferably formed to have a thickness of, for example, about 2 nm to 80 nm.

The metal wiring of the array substrate including such TFTs can be at least two-layer metal wiring using copper or copper alloy as the surface layer. For the metal wiring, for example, a copper alloy obtained by adding one or more elements selected from magnesium, titanium, nickel, molybdenum, indium, tin, zinc, aluminum, calcium, etc. to copper can be used. The element added to copper is not limited to the above elements, and the amount added to copper is preferably 3 atomic half percent or less relative to the atomic half percent of copper. If it is 1 atomic half fraction or less, high light reflectance can be ensured without greatly reducing the light reflectance of the metal wiring. More preferably, the added amount is 1 atomic half percent or less.

In addition, the surface layer of the metal wiring referred to here refers to the part located on the side of the liquid crystal layer (the position close to the liquid crystal layer, the side of the photosensor, the position close to the photosensor) when the array substrate is viewed in a cross-section along the thickness direction. Metal layer (first metal layer). The lower metal layer (second metal layer) is located on the array substrate side (closer to the array substrate) than the copper or copper alloy on the surface layer.

For the second metal layer, refractory metals such as titanium, molybdenum, tantalum, and tungsten, or alloys containing these materials are preferably used. A titanium alloy having an etching rate (rate) close to that of copper or a copper alloy of the first metal layer can be selected as the second metal layer. Preferably, the film thickness of copper or copper alloy and the film thickness of the second metal layer are each formed within a range of, for example, 50 nm to 500 nm.

There is no limitation on the film-forming method of the first metal layer and the second metal layer using an oxide semiconductor layer, copper or copper alloy as the surface layer, but vacuum film-forming by sputtering is preferable in terms of production efficiency. The sputtering film forming apparatus can efficiently form a film of a metal wiring composed of a first metal layer and a second metal layer on a large-area transparent substrate with high productivity. The first metal layer made of copper or copper alloy on the oxide semiconductor is selectively etched, for example, with an oxidizing alkaline etchant, so that it can be patterned as a metal wiring without damaging the oxide semiconductor. It is possible to easily process metal wiring and metal layers using copper or copper alloy as the surface layer, which is difficult in silicon-based semiconductor transistors, and to form a transistor element.

The first metal layer made of copper or a copper alloy exhibits a high reflectance at the long wavelength side of light, especially at 600 nm or more, as shown in FIG. 1 . As shown in FIG. 2, by forming the metal wiring so as to overlap (fill the lower part) with the first optical sensor S1 and the second optical sensor S2, it is possible to receive directly incident light and reflected light reflected by the metal wiring, The light receiving sensitivity of the 1st photosensor S1 and the 2nd photosensor S2 can be improved. In addition, in the embodiment shown in FIG. 2 , the transistor including the channel layer 26 of an oxide semiconductor is shown as having a bottom-gate structure, but it is not limited to the bottom-gate structure. For example, a transistor having a top gate structure, a double gate structure, or a dual gate structure can be used.

<First Embodiment>

When the liquid crystal display device according to the first embodiment performs color display, for example, a liquid crystal display device including a backlight unit including red light-emitting LEDs, green light-emitting LEDs, and blue light-emitting LEDs is assumed. When not performing color display, a white-emitting LED or fluorescent lamp may be used as a backlight unit.

3 is a partial plan view showing a plurality of pixel openings of the liquid crystal display device according to the embodiment of the present invention. In addition, only 8 pixels are shown in FIG. 3 , which is part of the display surface of a liquid crystal display device in which a large number of pixels, for example, 1280 pixels in the X direction and 768 pixels in the Y direction are actually arranged.

A plurality of pixels P, P, . . . are divided by pixel openings 20 formed in the black matrix 2 . The photosensor is composed of a first photosensor (photosensor) S1 and a second photosensor S2, which are respectively arranged in the pixel P. In addition, as a structure in which the first photosensor S1 and the second photosensor S2 are arranged, a structure in which a set of photosensors is provided in a plurality of pixels may be used, that is, instead of providing a set of photosensors in all pixels, One set of photosensors is arranged in one pixel selected (at predetermined intervals) among a plurality of pixels (partial arrangement).

The first photosensor S1 is arranged at a position covered by the black matrix 2 (a position overlapping with the black matrix 2 ). On the other hand, the second photosensor S2 is arranged in the pixel opening 20 so that incident light enters the inside from the outside of the display surface. The first photosensor S1 and the second photosensor S2 do not have to be arranged in the same pixel P, but it is preferable to arrange the first photosensor S1 and the second photosensor S2 close to each other for calculation of received light data.

In this embodiment, by subtracting the light-receiving data of the first photosensor S1 from the light-receiving data of the second photosensor S2, the light-receiving data of the visible light region excluding the infrared region can be extracted. In this subtraction, for example, the dark currents of the first photosensor S1 and the second photosensor S2 can be subtracted, so that high-precision light reception data can be obtained.

FIG. 4 is a schematic cross-sectional view showing a liquid crystal display device 400 in which the backlight unit 13 is arranged on the rear side of the array substrate 300 (at a position close to the rear side). A polarizing plate 15 is provided as an optical control element on the front and rear surfaces of the liquid crystal cell 200 , and a first photosensor S1 and a second photosensor S2 are arranged under the liquid crystal layer 6 . For example, pointers such as the viewer's finger 16 reflect the light 18 emitted from the backlight unit 13 , and are received as incident light 19 by the first optical sensor S1 and the second optical sensor S2 . The incident light 19 is not limited to reflected light from a pointer such as the finger 16 , and may be, for example, incident light from a laser pointer or the like. In addition, part of the incident light 19 is reflected by the metal wiring 24 arranged to fill the lower portion of the first photosensor S1, and is received by the first photosensor S1. Thereby, the detection sensitivity of the incident light 19 improves. The backlight unit 13 includes, for example, red light-emitting LEDs, green light-emitting LEDs, blue light-emitting LEDs, and infrared light-emitting LEDs as light sources 14 .

Fig. 2 is a cross-sectional view showing a cross section along line BB' in Fig. 3 .

Under the first photosensor S1, metal wiring 24 constituting a source line, a drain line, etc. is arranged, or a dummy pattern 25 of a metal layer is arranged at a portion where no metal wiring 24 is formed. For example, the dummy pattern 25 can be formed in the same layer as the gate lines simultaneously in the manufacturing process. Although not shown in FIG. 2 , a metal wiring 24 such as a source line or a drain line is arranged below the second photosensor S2, or a dummy pattern 25 of a metal layer is arranged at a portion where the metal wiring 24 is not formed. .

The first photosensor S1 and the second photosensor S2 (not shown) have amorphous silicon 35, an intrinsic semiconductor (I-type semiconductor), and an intrinsic semiconductor (I-type semiconductor) stacked in this order in the direction from a position close to the liquid crystal layer 6 toward a position away from the liquid crystal layer 6. ) structure of amorphous silicon 36 and N-type semiconductor amorphous silicon 37. For example, the amorphous silicon 35 of the P-type semiconductor may have a film thickness of 5 nm to 50 nm, the amorphous silicon 36 of the I-type semiconductor may have a film thickness of 100 nm to 1000 nm, and the amorphous silicon 37 of the N-type semiconductor may have a film thickness of 20 nm to 200 nm. thick to form.

The upper electrode 21 and the lower electrode 22 functioning as a light-transmitting conductive film (transparent conductive film) are arranged on the upper surface of the amorphous silicon 35 of the P-type semiconductor and the lower surface of the amorphous silicon 37 of the N-type semiconductor, respectively. . The transparent conductive film is formed of, for example, a conductive metal oxide called ITO (Indium Tin Oxide), or the like. The upper electrode 21 can be, for example, a zigzag thin line pattern, a comb-tooth thin line pattern, or the like. By designing the pattern shape of the upper electrode 21 , the current collection effect of the lower electrode 22 can be improved.

In order to increase the sensitivity of the first photosensor S1 and the second photosensor S2, for example, a columnar structure, a concavo-convex structure, quantum dots, etc. may be laminated with transparent resin or the like. It is preferable to add particles or dyes having a wavelength conversion function to these structures. The formation positions of the P-type semiconductor and the N-type semiconductor may be reversed, or may be formed side by side in the horizontal direction. Amorphous silicon may also be set as microcrystalline silicon.

These first photosensors S1 and second photosensors S2 are formed, as shown in the figure, on a substrate on which oxide semiconductor transistors are formed in advance, for example, using a known amorphous silicon semiconductor process.

The first photosensor S1 is electrically connected to the electrode 24 from the lower electrode 22 through the contact hole 23 and the metal wiring 20 . The upper electrode 21 of the first photosensor S1 is connected to the common electrode wiring through a contact hole (not shown). Thereby, when a reset signal is given, the electric potential of the 1st photosensor S1 can be set as a common electric potential. The insulating layer 33 can be formed using, for example, silicon oxide, silicon oxynitride, aluminum oxide, and mixed oxides containing these materials, or an acrylic resin that is photosensitive and capable of alkali development. The second photosensor S2 not shown in FIG. 2 can also be formed in the same manner as the first photosensor S1.

A plurality of transistors are arranged under the first photosensor S1 and the second photosensor S2, so that the first photosensor S1 and the second photosensor S2 can be driven. A plurality of oxide semiconductor transistors can be used, for example, as selection transistors, amplification transistors, reset transistors, or liquid crystal drive transistors of the first photosensor S1 or the second photosensor S2. When the capacitance of the first photosensor S1 and the second photosensor S2 is small, a capacitor can be arranged as an auxiliary for each.

As shown in FIG. 1 , the light reflectance of copper or copper alloy constituting the metal wiring 24 shows a high reflectance on the long wavelength side of light, especially at 600 nm or more. As shown in FIG. 2, the metal wiring 24 is arranged in the area where the lower part of the first optical sensor S1 and the second optical sensor S2 is buried, that is, the area overlapping the first optical sensor S1 and the second optical sensor S2. As a result, the reflected light reflected by the metal wiring 24 can be received by the first photosensor S1 and the second photosensor S2. Thereby, the light receiving efficiency of the 1st photosensor S1 and the 2nd photosensor S2 can be improved.

The black matrix 2 in this embodiment has a transmittance of 50% or more in a detection wavelength region of 680 nm to 800 nm and a specific transmittance of 50% or more, as shown by the line BLK1 showing the wavelength selective transmission characteristic in FIG. 5 . The longer the wavelength side, the higher the transmittance is, and the visible light is hardly transmitted, but the light in the infrared region is transmitted. The half-value wavelength of the black matrix 2 can be adjusted in the range of about 680nm to 800nm by selecting or combining organic pigments. The half-value wavelength is defined here as the wavelength of light at which the transmittance becomes 50%. In addition, the material composition of the black matrix 2 will be described in detail later.

Fig. 6 is a cross-sectional view taken along line AA' of Fig. 3, illustrating the structure of a liquid crystal display device. In addition, illustration of a transistor for driving a liquid crystal layer, a polarizing plate, an alignment film, and the like is omitted.

The liquid crystal molecules of the liquid crystal layer 6 in FIG. 6 have an initial orientation horizontal to one surface of the array substrate 30, and are rotated on the surface by applying a voltage between the pixel electrode 31 and the common electrode 32 to control the emission from the backlight unit. The transmittance of the light, thus to display. The dielectric constant anisotropy of liquid crystal molecules can be either positive or negative. Transparent electrodes such as ITO are not formed on the transparent resin layer 12 (first transparent resin layer) of the counter substrate 100 . In addition, the illustration of the alignment film on the transparent resin layer 12 is omitted.

<Second Embodiment>

In the second embodiment, as shown in FIGS. 7 and 8 , a red layer R, a green layer G, and a blue layer are disposed at positions corresponding to the pixel openings 20 formed in the black matrix 2 of the liquid crystal display device. The structure of the color filter of B (the part G of the green layer is enlargedly shown in FIGS. 7 and 8 ). Like the first embodiment, the first photosensor S1 and the second photosensor S2 are formed in each of a plurality of pixels. The liquid crystal molecules in the liquid crystal layer 6 are liquid crystals whose initial alignment is vertical alignment, are driven by a voltage applied between the counter electrode (common electrode) 52 and the pixel electrode 51, and tilt in the horizontal direction when the voltage is applied to transmit light. The polarizing plates are normally closed by the crossed Nicols structure.

Fig. 8 is a cross-sectional view along line CC' of Fig. 7 . The light-shielding layer 3 is arranged in a predetermined pattern in substantially the same shape as the black matrix 2, and a second transparent resin layer 4 is formed on the color filter. The formation of the second transparent resin layer can be omitted.

For example, the light-shielding layer 3 is formed using light-shielding carbon as a color material, and substantially prevents the transmission of both visible light and infrared light. Similar to the first embodiment, the black matrix 2 is a mixture of a plurality of organic pigments, and has the characteristic of substantially not transmitting the visible light region but transmitting the infrared region.

The black matrix 2 according to the embodiment of the present invention can set the wavelength (half-value wavelength) of 50% transmittance to about 680 nm to 800 nm as represented by the lines BLK1 and BLK2 representing the wavelength selective transmission characteristic in FIG. 5 . scope. The adjustment of this half-value wavelength can be performed by the combination of organic pigments, the ratio of pigments, or the adjustment of the film thickness of the black matrix 2 .

As shown in FIG. 9 , the black matrix 2 of the present embodiment has an overlapping portion overlapping with a color filter (green layer G in FIG. 9 ) in a region where the light shielding layer 3 and the metal wiring 24 are not patterned. In addition, Fig. 9 is a cross-sectional view along line DD' of Fig. 7 .

10 is a graph showing an example of the transmission characteristic GL of the green layer G pattern and the transmission characteristic GLBLK obtained by superimposing the pattern of the green layer G on the transmission characteristic BLK1 (see FIGS. 5 and 9 ) of the black matrix 2 . The transmission characteristic GL corresponds to the light reception data of the second photosensor S2 shown in FIG. 9 . The transmission characteristic GLBLK corresponds to the light reception data of the first photosensor S1 shown in FIG. 9 .

High-precision green detection data in the visible light region is obtained by subtracting detection data of light detected by optically overlapping the pattern of the green layer G with the black matrix 2 from detection data of light detected via the pattern of the green layer G . The calculation processing of these data is performed by the processing part 34, and only the detection data of green in a visible light range can be extracted.

11 is a graph showing an example of the transmission characteristic RL of the pattern of the red layer R and the transmission characteristic RLBLK obtained by superimposing the pattern of the red layer R on the transmission characteristic BLK1 (see FIGS. 5 and 9 ) of the black matrix 2 . The transmission characteristic RL corresponds to the light reception data of the second photosensor S2 shown in FIG. 9 . The transmission characteristic RLBLK corresponds to the light reception data of the first photosensor S1 shown in FIG. 9 .

High-precision red detection data in the visible light region is obtained by subtracting detection data of light detected by optically overlapping the pattern of the red layer R with the black matrix 2 from detection data of light detected via the pattern of the red layer R . The calculation processing of these data is performed by the processing part 34, and only the detection data of red in a visible light range can be extracted.

12 is a graph showing an example of the transmission characteristic BL of the pattern of the blue layer B and the transmission characteristic BLBLK obtained by superimposing the pattern of the blue layer B on the transmission characteristic BLK1 of the black matrix 2 . The transmission characteristic BL corresponds to the light reception data of the second photosensor S2 shown in FIG. 9 . The transmission characteristic BLBLK corresponds to the light reception data of the first photosensor S1 shown in FIG. 9 .

High-precision blue detection data in the visible light region is obtained by subtracting the light detected by optically superimposing the pattern of the blue layer B on the black matrix 2 from the detection data of light detected via the pattern of the blue layer B. obtained from the test data. The calculation processing of these data is performed by the processing part 34, and only the detection data of blue in a visible light range can be extracted.

The subtraction of the light-receiving data of the first photosensor S1 and the second photosensor S2 can compensate for the dark current caused by the above-mentioned change in ambient temperature, etc. during the operation, so that higher-precision light-receiving data can be extracted . If the incident light is outside light such as sunlight or outside light such as a dark room, these light reception data can be fed back to the brightness adjustment of the liquid crystal display device according to the respective light reception conditions.

In the case of acquiring light-receiving data in the near-infrared region, for example, only in the range of 680nm to 800nm, for example, the light-receiving data from the first photosensor S1 located below the overlapping portion where the pattern of the red layer R overlaps with the black matrix 2 The subtraction operation is performed on the light-receiving data of the first photosensor S1 located at the lower part of the overlapping portion where the pattern of the blue layer B overlaps with the black matrix 2 . In this way, light-receiving data between 680nm and 800nm can be extracted. At this time, the aforementioned dark current compensation can also be performed at the same time.

In addition, in FIG. 9 , solid light emitting elements (LEDs) that emit light in red, green, and blue can also be provided in the backlight unit (not shown). For example, time-division (field sequential) light emission and synchronous control of the liquid crystal in the pixel portion are performed for red LEDs, green LEDs, and blue LEDs. Thereby, full-color display can be performed. Furthermore, by adding infrared light-emitting LEDs in addition to red LEDs, green LEDs, and blue LEDs, infrared rays emitted from the infrared light-emitting LEDs can be irradiated to pointers such as fingers, and such a structure can be used for touch sensing applications. .

The first photosensor S1 can be applied to detection of infrared light reception. If red, green, and blue light are simultaneously emitted and reflected in light-receiving data, the first photosensor S1 and the second photosensor S2 can be applied to color copying, personal verification, and the like. For example, the liquid crystal display device provided with the liquid crystal display device substrate according to the embodiment of the present invention can also be applied to a personal authentication system such as finger recognition due to high precision of 300 ppi or more.

In addition, when a silicon-based photodiode is used for the photosensor of the liquid crystal display device according to the embodiment of the present invention, a PIN diode or a PN diode may be used. In the case of PIN diodes, the arrangement of P-type region/intrinsic region/N-type region can be arranged in parallel along the horizontal direction of the surface of the transparent substrate, or can be stacked in the vertical direction of the surface of the transparent substrate. Structure.

As above, by utilizing the position where the black matrix 2 overlaps the pattern of the red layer R, the position where the black matrix 2 overlaps the pattern of the green layer G, and the position where the black matrix 2 overlaps the pattern of the blue layer included in the liquid crystal display device according to the present invention. The overlapping portions provided at the positions where the patterns of the layer B overlap can achieve highly accurate color separation.

With the liquid crystal display device including the display device substrate according to the embodiment of the present invention, for example, color copying, color imaging, utilization as a motion sensor, touch sensing using an infrared region, optical communication, etc. can be realized.

In addition, since the light shielding layer 3 and the black matrix 2 have different transmittances in the near-infrared region, alignment (alignment) in the manufacturing process can be performed, for example, with light having a wavelength of 800 nm. The formation pattern of the light-shielding layer 3 in this embodiment can be used as a frame portion having high light-shielding properties that surrounds four sides including the periphery of the plurality of openings. Marks for alignment can also be formed in advance on the transparent substrate through the light-shielding layer 3 .

<Third embodiment>

The third embodiment is an embodiment of the present invention in which the black matrix 2 is formed before the pattern of the red layer R, the pattern of the green layer G, and the pattern of the blue layer B are formed.

FIG. 13 shows a partial cross-sectional view of a liquid crystal display device according to a third embodiment.

The liquid crystal molecules of the liquid crystal layer 6 according to the third embodiment are liquid crystals whose initial orientation is a vertical orientation, are driven by a voltage applied between the counter electrode (common electrode) 52 and the pixel electrode 51, and tilt in the horizontal direction when the voltage is applied. , to transmit light. The polarizing plates are normally closed by the crossed Nicols structure.

When the purpose of touch sensing using the infrared region is not the purpose of color separation, the arrangement of the second photosensor S2 may be omitted. For the purpose of touch sensing using the near-infrared region, only any one of the pattern of the red layer R, the pattern of the green layer G, and the pattern of the blue layer B overlaps with the black matrix 2. The first optical sensor S1 is sufficient. The first photosensor S1 can be formed in various densities, for example, one per pixel, or one per three or six pixels.

＜Examples of constituent materials＞

Hereinafter, an example of a constituent material of each member of the liquid crystal device described in each of the above-mentioned embodiments will be described.

(transparent resin)

The photosensitive coloring composition used for the formation of the black matrix 2, the light shielding layer 3, and the color filter composed of the pixel pattern of the red layer R, the green layer G, and the blue layer B, except the pigment dispersion (hereinafter referred to as paste agent), a polyfunctional monomer, a photosensitive resin or a non-photosensitive resin, a polymerization initiator, a solvent, and the like are also contained. For example, highly transparent organic resins such as photosensitive resins and non-photosensitive resins used in this embodiment are collectively called transparent resins.

As the transparent resin, a thermoplastic resin, a thermosetting resin, or a photosensitive resin can be used. As the thermoplastic resin, for example, butyral resin, phenylacetic acid-maleic acid copolymer, chlorinated polyethylene, chlorinated polypropylene, polyvinyl chloride, vinyl chloride-vinyl acetate copolymer, polyvinyl acetate, polyurethane resin can be used , polyester resin, acrylic resin, alkyd resin, polystyrene resin, polyamide resin, rubber-based resin, cyclized rubber-based resin, cellulose, butadiene, polyethylene, polypropylene, polyimide resin etc. As the thermosetting resin, for example, epoxy resin, benzomelamine resin, rosin-modified maleic acid resin, rosin-modified fumaric acid resin, melamine resin, urea resin, phenolic resin and the like can be used. The thermosetting resin may be produced by reacting a melamine resin and an isocyanate group-containing compound.

(alkali soluble resin)

In the formation of the light-shielding layer 3, black matrix 2, first transparent resin layer 12, second transparent resin layer 11, and color filter according to this embodiment, it is preferable to use a photosensitive resin composition that can be patterned by photolithography. things. These transparent resins are preferably resins not imparted with alkali solubility. As the alkali-soluble resin, a resin containing a carboxyl group or a hydroxyl group may be used, or other resins may be used. As the alkali-soluble resin, for example, epoxy acrylate resin, novolac resin, polyvinyl phenol resin, acrylic resin, carboxyl group-containing epoxy resin, carboxyl group-containing urethane resin, etc. can be used. Among these resins, epoxy acrylate resins, novolac resins, and acrylic resins are preferably used as alkali-soluble resins, and epoxy acrylate resins or novolac resins are particularly preferred.

(Acrylic)

As a representative of the transparent resin that can be used in this embodiment, the following acrylic resins are exemplified.

As the acrylic resin, it is possible to use a polymer obtained by utilizing the following monomers, such as: (meth)acrylic acid; methyl (meth)acrylate, ethyl (meth)acrylate, (meth)acrylic acid Alkyl (meth)acrylates such as propyl (meth)acrylate, tert-butyl (meth)acrylate, benzyl (meth)acrylate, lauryl (meth)acrylate, etc.; (meth)acrylic acid (meth)acrylates containing hydroxyl groups such as hydroxyethyl ester and hydroxypropyl (meth)acrylate; (meth)acrylates containing ether groups such as epoxyethyl (meth)acrylate and glycidyl (meth)acrylate ) acrylates; and alicyclic (meth)acrylates such as cyclohexyl (meth)acrylate, isobornyl (meth)acrylate, and dicyclopentenyl (meth)acrylate.

In addition, these exemplified monomers may be used alone, or two or more of them may be used in combination.

Furthermore, the acrylic resin can be produced using a copolymer containing a compound such as phenylacetic acid, cyclohexylmaleimide, or phenylmaleimide, which can be copolymerized with monomers of these materials. In addition, for example, a copolymer obtained by copolymerizing a carboxylic acid having an ethylenically unsaturated group such as (meth)acrylic acid can be reacted with a compound containing an epoxy group and an unsaturated double bond such as glycidyl methacrylate, A photosensitive resin is generated to obtain an acrylic resin. For example, by making epoxy-containing (meth)acrylate polymers such as glycidyl methacrylate or polymers thereof and other (meth)acrylic acid copolymers and (meth)acrylic acid and other carboxyl-containing Acid compounds are added to form a photosensitive resin, forming an acrylic resin.

(organic pigment)

As a red pigment, for example, C.I.PigmentRed7, 9, 14, 41, 48:1, 48:2, 48:3, 48:4, 81:1, 81:2, 81:3, 97, 122, 123, 146, 149, 168, 177, 178, 179, 180, 184, 185, 187, 192, 200, 202, 208, 210, 215, 216, 217, 220, 223, 224, 226, 227, 228, 240, 242, 246, 254, 255, 264, 272, 279, etc.

As yellow pigments, for example, C.I. Pigment Yellow 1, 2, 3, 4, 5, 6, 10, 12, 13, 14, 15, 16, 17, 18, 20, 24, 31, 32, 34, 35, 35 can be used: 1, 36, 36: 1, 37, 37: 1, 40, 42, 43, 53, 55, 60, 61, 62, 63, 65, 73, 74, 77, 81, 83, 86, 93, 94, 95, 97, 98, 100, 101, 104, 106, 108, 109, 110, 113, 114, 115, 116, 117, 118, 119, 120, 123, 125, 126, 127, 128, 129, 137, 138, 139, 144, 146, 147, 148, 150, 151, 152, 153, 154, 155, 156, 161, 162, 164, 166, 167, 168, 169, 170, 171, 172, 173, 174, 175, 176, 177, 179, 180, 181, 182, 185, 187, 188, 193, 194, 199, 213, 214, etc.

As a blue pigment, C.I. PigmentBlue15, 15:1, 15:2, 15:3, 15:4, 15:6, 16, 22, 60, 64, 80 etc. can be used, for example. In addition, the half-value wavelength of C.I.PigmentBlue15:3 in the infrared region is around 760 nm. For example, the half-value wavelength of the black matrix 2 can be adjusted to a longer wavelength side than 680 nm, for example, by adding a small amount of pigment such as C.I.

As a purple pigment, for example, C.I. Pigment Violet 1, 19, 23, 27, 29, 30, 32, 37, 40, 42, 50, etc. can be used, and C.I. Pigment Violet 23 is preferable among these pigments.

As green pigments, for example, C.I. Pigment Green 1, 2, 4, 7, 8, 10, 13, 14, 15, 17, 18, 19, 26, 36, 45, 48, 50, 51, 54, 55, 58, etc. can be used , among these pigments, C.I. Pigment Green 58, which is a halogenated zinc phthalocyanine green pigment, is preferred. As green pigments, halogenated aluminum phthalocyanine pigments can also be used.

(Color materials for light-shielding layer and black matrix)

The light-shielding color material included in the light-shielding layer 3 and the black matrix 2 is a color material having absorption in the visible light wavelength region and having a light-shielding function. As the light-shielding color material in this embodiment, for example, an organic pigment, an inorganic pigment, a dye, or the like can be used. The color material of the black matrix 2, which emphasizes the transmittance of light in the infrared region, is preferably mainly composed of organic pigments. As a coloring material of the light-shielding layer 3, carbon black, titanium oxide, etc. can be used, for example. As dyes that can be included in the light-shielding layer 3 and the black matrix 2, for example, azo-based dyes, anthraquinone-based dyes, phthalocyanine-based dyes, quinoneimine-based dyes, quinoline-based dyes, nitro-based dyes, and carbonyl-based dyes can be used. dyes, methine dyes, etc. As the organic pigment, for example, the above-mentioned organic pigments can also be applied. In addition, these light-shielding coloring materials may be used 1 type, and may use 2 or more types together in an appropriate ratio.

For example, the visible light wavelength range is about the range of light wavelength 400nm-700nm.

The wavelength at which the transmittance of the black matrix 2 according to the present embodiment increases is in a region of about 680 nm to about 800 nm of light wavelength. Here, the transmittance of the red layer is kept high at a light wavelength of about 680 nm. The light wavelength of 800 nm is a rising part where the transmittance of the blue layer becomes high.

(Example of black resist used in light-shielding layer)

The preparation example of the black paste (dispersion) used for a light-shielding layer is demonstrated.

A mixture having the following composition was uniformly stirred and mixed, and stirred by a bead disperser to prepare a black paste. Each composition is represented by mass parts.

20 parts of carbon pigment

Dispersant 8.3 parts

Copper phthalocyanine derivative 1.0 parts

71 parts of propylene glycol monomethyl ether acetate

Using the above-mentioned black paste, a mixture of the following composition was uniformly stirred and mixed, and filtered through a 5 μm filter to prepare a black resist that can be applied to the frame portion 1 . In this embodiment, the term "resist" refers to a photosensitive coloring composition containing carbon or a pigment.

25.2 parts of black paste

Acrylic resin solution 18 parts

Pentaerythritol penta and hexaacrylate 5.2 parts

1.2 parts of photopolymerization initiator

0.3 parts of sensitizer

Leveling agent 0.1 part

Cyclohexanone 25 parts

25 parts of propylene glycol monomethyl ether acetate

In the present embodiment and the above-mentioned embodiments, the main color material in the black resist or the color resist means that it occupies 50% of the total mass ratio (%) of the color material contained in the resist. above colors. For example, in a black resist, carbon occupies 100% of the color material, and carbon becomes the main color material. In addition, in order to adjust the color tone or reflective color of the black resist with carbon as the main color material, organic pigments such as red, yellow, and blue may be added in an amount of 10% or less in the total mass ratio. .

(Example of black resist used in black matrix)

The mixing example of the organic pigment used for the black matrix 2 is shown below.

C.I. Pigment Red 254 (hereinafter referred to as R254)

C.I. Pigment Yellow 185 (hereinafter referred to as Y185)

C.I. Pigment Violet 23 (hereinafter referred to as V23)

Among these three kinds of pigments, one of Y139 or R254 can also be removed. In addition to these three types of pigments, a small amount of 30% by mass or less of other types of pigments such as the above-mentioned organic pigments may be added in order to adjust the color (transmission wavelength). For example, in order to adjust the improvement of the spectral characteristics (adjustment of the shape of the spectral curve) in the vicinity of the light wavelength of 700nm, the halogenated zinc phthalocyanine pigment, the halogenated copper phthalocyanine pigment, the halogenated aluminum phthalocyanine pigment, or the C.I pigment blue 15 can be: 3 Use in an amount of 30% by mass or less.

Preferably, the transmittance of the black matrix 2 in the visible light region is 5% or less. The visible light region generally has a light wavelength of about 400 nm to 700 nm. In order to set the half-value wavelength of the black matrix 2 within the light wavelength range of 670nm to 750nm, it is necessary to increase the infrared transmittance characteristics from around the light wavelength of about 660nm, and to increase the transmittance characteristics on the longer wavelength side. The wavelength range of the low transmittance of the black matrix 2 may be a range of about 400 nm to 650 nm of light wavelength. In addition, the transmittance of the black matrix 2 can be extremely easily set to 5% in the range of about light wavelength 400nm to 650nm by the amount of pigment contained in the organic pigment light-shielding layer 14, or by thickening the film thickness of the black matrix 2. below the low value.

Similarly, the wavelength position of the half-value wavelength can be easily adjusted based on the amount of pigment, the composition ratio of violet pigment, green pigment, yellow pigment, red pigment, and blue pigment described later, the film thickness of the black matrix 2 , and the like. Various green pigments described later can be used as the green pigment applied to the black matrix 2 . In order to set the half-value wavelength of the black matrix 2 in the range of light wavelength 680nm to 800nm, as green pigments and blue pigments, it is preferable that the rise of infrared transmittance (for example, half-value wavelength) is in the range of light wavelength 680nm-800nm pigment. The adjustment for setting the half-value wavelength to the light wavelength range of 680 nm to 800 nm is mainly realized based on violet pigments and green pigments. In order to adjust the spectral characteristics of the black matrix 2 , blue pigments may also be added. When the blue pigment is used instead of the violet pigment of the above-mentioned mixing example of the organic pigment, the half-value wavelength can be adjusted to about 800 nm.

The mass ratio (%) of R254 may fall within the range of 15 to 40%, for example.

The mass ratio (%) of Y185 may fall within the range of 10 to 30%, for example.

The mass ratio (%) of V23 may fall within the range of 75 to 30%, for example.

By also adding the above-mentioned green pigment or blue pigment, the mass ratio of V23 in the overall pigment can be reduced.

When the film thickness of the black matrix 2 is, for example, about 1 μm, the purple pigment of V23 is added to the black matrix 2 at an arbitrary value in the range of 75 to 30%. Accordingly, the black matrix 2 has a half-value wavelength on the longer wavelength side than the light wavelength of 670 nm. By making the yellow organic pigment an optional addition amount of 10 to 30%, and adding 15 to 40% of the red organic pigment and mixing, it is possible to sufficiently reduce the light wavelength of the black matrix 2 from 400 nm to 660 nm. Transmittance. By preventing the transmittance of the organic pigment light-shielding layer 14 from becoming slightly higher in the range of light wavelength 400nm to 660nm (preventing the transmittance of the black matrix BM from becoming slightly higher than the reference line of transmittance 0% in the spectral characteristics), thus , by subtracting the light-receiving data of the second photosensor S2 from the light-receiving data of the first photosensor S1, accurate color separation can be performed. In addition, the half-value wavelength and the transmittance of the black matrix 2 can be adjusted by the film thickness of the black matrix 2 .

Usually, before producing a color resist (colored composition) based on these pigments, the pigments are dispersed in a resin or a solution to produce a pigment paste (dispersion liquid). For example, in order to disperse the pigment Y185 alone in a resin or a solution, the following materials are mixed with respect to 7 parts (parts by mass) of the pigment Y185.

Acrylic resin solution (solid content 20%) 40 parts

Dispersant 0.5 parts

Cyclohexanone 23.0 parts

In addition, pigments such as V23 and R254 can also be dispersed in the same resin or solution to produce a black pigment dispersion paste.

Hereinafter, the composition ratio for producing the black resist 2 based on the above-mentioned pigment dispersion paste will be exemplified.

Y139 paste 14.70 parts

V23 paste 20.60 parts

Acrylic resin solution 14.00 parts

Basic monomer 4.15 parts

Initiator 0.7 part

0.4 parts of sensitizer

Cyclohexanone 27.00 parts

PGMAC10.89 copies

The black resist used for the black matrix 2 is produced by the composition ratio mentioned above.

The black resist used as the main color material of the pigment used in the formation of the black matrix 2 is a violet pigment V23 occupying about 58% of the total mass ratio. Most organic pigments have a high transmittance in a wavelength region longer than the light wavelength of about 800 nm. The yellow pigment Y139 is also an organic pigment having a high transmittance in a wavelength region longer than the light wavelength of 800 nm.

For example, the main color material of the black resist may be 100% organic pigment. Alternatively, in the black resist 2 having an organic pigment as a main color material, carbon may be added to about 40% or less of the total mass in order to adjust light-shielding properties.

The above-mentioned colored resist containing a black resist is applied onto a transparent substrate, and patterning can be performed by a known photolithography process. Alternatively, pattern formation is performed by dry etching, for example, using a novolak-based photosensitive resist.

In the black resist whose main pigment is carbon, an alignment mark is also formed in addition to the frame portion, and alignment after application of the black resist can be achieved by using the alignment mark. As shown in FIG. 5 , the alignment mark can be recognized by using an infrared camera or the like, for example, by using a difference in transmittance at a light wavelength of 850 nm.

The liquid crystal display device according to the embodiment of the present invention can be used in various applications. Examples of electronic equipment that can be used as objects of the liquid crystal display device of the present invention include mobile phones, portable game machines, portable information terminals, personal computers, electronic books, video cameras, digital cameras, head-mounted displays, navigation systems, acoustic reproduction Devices (car audio, digital audio players, etc.), copiers, facsimile machines, printers, printer multifunction machines, vending machines, cash deposit and withdrawal machines (ATMs), personal authentication equipment, optical communication equipment, etc.

Explanation of reference signs

2...black matrix, 3...shading layer, 4, 11...the second transparent resin layer, 6...the liquid crystal layer, 10...the first transparent substrate, 12...the first transparent resin layer (transparent resin layer) , 13...backlight unit, 14...display section, 15...polarizing plate, 16...indicator, 20...opening (pixel opening), 21...upper electrode, 22...lower electrode, 24 ... metal wiring, 25 ... dummy pattern (metal layer), 30 ... second transparent substrate, 33 ... insulating layer, 34 ... processing part, 35, 36, 37 ... amorphous silicon, 31, 51 ... ...Pixel electrode, 32...Common electrode, 52...Counter electrode (common electrode), 100...Display device substrate (counter substrate), 200...Liquid crystal cell, 300...Array substrate, 400...Liquid crystal Display device, R...red layer, G...green layer, B...blue layer, S1...first light sensor, S2...second light sensor.

Claims (as amended under Article 19 of the Treaty)

1. [After modification] A liquid crystal display device having a liquid crystal unit,

This liquid crystal unit has:

The opposite substrate has a first transparent substrate on which at least a black matrix having a plurality of pixel openings; and a transparent resin layer are sequentially stacked; and

An array substrate having a second transparent substrate on which at least: a photosensor; a plurality of active elements including an oxide semiconductor as a channel layer; metal wiring; and a dummy pattern are arranged;

The liquid crystal cell is constituted by bonding the opposing substrate and the array substrate oppositely through the liquid crystal layer,

The black matrix has a transmittance of 50% or more in a detection wavelength region of light having a wavelength of 680nm to 800nm, and a higher transmittance on the longer wavelength side than the wavelength at which the transmittance becomes 50% or more. characteristic,

The sensor has a sensitivity region including the detection wavelength region, and is formed to overlap the black matrix when viewed from the counter substrate at a position closer to the liquid crystal layer than the active element,

At least a surface layer of the metal wiring and the dummy pattern is formed of copper or a copper alloy, and the metal wiring and the dummy pattern are formed to fill a region overlapping with the photosensor when viewed from above the counter substrate. .

2. A liquid crystal display device having a liquid crystal unit,

This liquid crystal unit has:

The opposite substrate has a first transparent substrate, and on the first transparent substrate at least sequentially stacked: a light-shielding layer having a plurality of pixel openings and shielding light in the visible light region and the infrared region; The openings are respectively provided with a color filter composed of colored pixels of a red layer, a green layer, and a blue layer; a black matrix; and a transparent resin layer; and

The array substrate has a second transparent substrate on which at least: a photosensor; a plurality of active elements including an oxide semiconductor as a channel layer; and metal wiring are arranged;

The liquid crystal cell is constituted by bonding the opposing substrate and the array substrate oppositely through the liquid crystal layer,

The black matrix has a transmittance of 50% or more in a detection wavelength region of light having a wavelength of 680nm to 800nm, and a higher transmittance on the longer wavelength side than the wavelength at which the transmittance becomes 50% or more. characteristics, and has an overlapping portion overlapping any one of the red layer, the green layer, and the blue layer,

The sensor has a sensitivity region including the detection wavelength region, and is formed to overlap the black matrix when viewed from the counter substrate at a position closer to the liquid crystal layer than the active element,

At least a surface layer of the metal wiring is made of copper or a copper alloy, and the metal wiring is formed to fill a region overlapping with the photosensor when viewed from above the counter substrate.

3. A liquid crystal display device comprising a liquid crystal unit,

This liquid crystal unit has:

The opposing substrate has a first transparent substrate, on which at least a black matrix with a plurality of pixel openings is stacked in sequence; a red layer, a green layer, a blue layer, and a blue layer are respectively provided in the plurality of pixel openings. a color filter composed of colored pixels of the colored layer; and a transparent resin layer; and

The array substrate has a second transparent substrate on which at least: a photosensor; a plurality of active elements including an oxide semiconductor as a channel layer; and metal wiring are arranged;

The liquid crystal cell is constituted by bonding the opposing substrate and the array substrate oppositely through the liquid crystal layer,

The black matrix has a transmittance of 50% or more in a detection wavelength region of light having a wavelength of 680nm to 800nm, and a higher transmittance on the longer wavelength side than the wavelength at which the transmittance becomes 50% or more. characteristics, and has an overlapping portion overlapping any one of the red layer, the green layer, and the blue layer,

The sensor has a sensitivity region including the detection wavelength region, and is formed to overlap the black matrix when viewed from the counter substrate at a position closer to the liquid crystal layer than the active element,

At least a surface layer of the metal wiring is made of copper or a copper alloy, and the metal wiring is formed to fill a region overlapping with the photosensor when viewed from above the counter substrate.

4. The liquid crystal display device according to any one of claims 1 to 3,

The black matrix contains a plurality of organic pigments as main color materials.

5. The liquid crystal display device according to any one of claims 1 to 4,

The oxide semiconductor is a composite metal oxide of two or more selected from gallium, indium, zinc, hafnium, tin, yttrium, titanium, germanium, and silicon.

6. The liquid crystal display device as claimed in claim 2 or 3,

The color filter has a position where the red layer overlaps the black matrix, where the green layer overlaps the black matrix, and where the blue layer overlaps the black matrix. the overlapping portion,

The photosensors are respectively arranged under the respective colored pixels of the red layer, the green layer, and the blue layer and under the overlapping portion when viewed from above.

7. The liquid crystal display device according to any one of claims 1 to 6,

A backlight unit that is provided on the opposite side of the liquid crystal cell to the counter substrate and emits light in a wavelength region longer than at least 680 nm is further provided.

8. The liquid crystal display device according to any one of claims 1 to 5, 7,

A photosensor is further provided which is formed so as to overlap the pixel opening in plan view from the counter substrate and has a sensitivity region at least in a visible light region.

Claims (8)

1. A liquid crystal display device having a liquid crystal unit, This liquid crystal unit has: The opposite substrate has a first transparent substrate on which at least a black matrix having a plurality of pixel openings; and a transparent resin layer are sequentially stacked; and The array substrate has a second transparent substrate on which at least: a photosensor; a plurality of active elements including an oxide semiconductor as a channel layer; and metal wiring are arranged; The liquid crystal cell is constituted by bonding the opposing substrate and the array substrate oppositely through the liquid crystal layer, The black matrix has a transmittance of 50% or more in a detection wavelength region of light having a wavelength of 680nm to 800nm, and a higher transmittance on the longer wavelength side than the wavelength at which the transmittance becomes 50% or more. characteristic, The sensor has a sensitivity region including the detection wavelength region, and is formed to overlap the black matrix when viewed from the counter substrate at a position closer to the liquid crystal layer than the active element, At least a surface layer of the metal wiring is made of copper or a copper alloy, and the metal wiring is formed to fill a region overlapping with the photosensor when viewed from above the counter substrate. 2. A liquid crystal display device having a liquid crystal unit, This liquid crystal unit has: The opposite substrate has a first transparent substrate, and on the first transparent substrate at least sequentially stacked: a light-shielding layer having a plurality of pixel openings and shielding light in the visible light region and the infrared region; The openings are respectively provided with a color filter composed of colored pixels of a red layer, a green layer, and a blue layer; a black matrix; and a transparent resin layer; and The array substrate has a second transparent substrate on which at least: a photosensor; a plurality of active elements including an oxide semiconductor as a channel layer; and metal wiring are arranged; The liquid crystal cell is constituted by bonding the opposing substrate and the array substrate oppositely through the liquid crystal layer, The black matrix has a transmittance of 50% or more in a detection wavelength region of light having a wavelength of 680nm to 800nm, and a higher transmittance on the longer wavelength side than the wavelength at which the transmittance becomes 50% or more. characteristics, and has an overlapping portion overlapping any one of the red layer, the green layer, and the blue layer, The sensor has a sensitivity region including the detection wavelength region, and is formed to overlap the black matrix when viewed from the counter substrate at a position closer to the liquid crystal layer than the active element, At least a surface layer of the metal wiring is made of copper or a copper alloy, and the metal wiring is formed to fill a region overlapping with the photosensor when viewed from above the counter substrate. 3. A liquid crystal display device comprising a liquid crystal unit, This liquid crystal unit has: The opposing substrate has a first transparent substrate, on which at least a black matrix with a plurality of pixel openings is stacked in sequence; a red layer, a green layer, a blue layer, and a blue layer are respectively provided in the plurality of pixel openings. a color filter composed of colored pixels of the colored layer; and a transparent resin layer; and The array substrate has a second transparent substrate on which at least: a photosensor; a plurality of active elements including an oxide semiconductor as a channel layer; and metal wiring are arranged; The liquid crystal cell is constituted by bonding the opposing substrate and the array substrate oppositely through the liquid crystal layer, The black matrix has a transmittance of 50% or more in a detection wavelength region of light having a wavelength of 680nm to 800nm, and a higher transmittance on the longer wavelength side than the wavelength at which the transmittance becomes 50% or more. characteristics, and has an overlapping portion overlapping any one of the red layer, the green layer, and the blue layer, The sensor has a sensitivity region including the detection wavelength region, and is formed to overlap the black matrix when viewed from the counter substrate at a position closer to the liquid crystal layer than the active element, At least a surface layer of the metal wiring is made of copper or a copper alloy, and the metal wiring is formed to fill a region overlapping with the photosensor when viewed from above the counter substrate. 4. The liquid crystal display device according to any one of claims 1 to 3, The black matrix contains a plurality of organic pigments as main color materials. 5. The liquid crystal display device according to any one of claims 1 to 4, The oxide semiconductor is a composite metal oxide of two or more selected from gallium, indium, zinc, hafnium, tin, yttrium, titanium, germanium, and silicon. 6. The liquid crystal display device as claimed in claim 2 or 3, The color filter has a position where the red layer overlaps the black matrix, where the green layer overlaps the black matrix, and where the blue layer overlaps the black matrix. the overlapping portion, The photosensors are respectively arranged under the respective colored pixels of the red layer, the green layer, and the blue layer and under the overlapping portion when viewed from above. 7. The liquid crystal display device according to any one of claims 1 to 6, A backlight unit that is provided on the opposite side of the liquid crystal cell to the counter substrate and emits light in a wavelength region longer than at least 680 nm is further provided. 8. The liquid crystal display device according to any one of claims 1 to 5, 7, A photosensor is further provided which is formed so as to overlap the pixel opening in plan view from the counter substrate and has a sensitivity region at least in a visible light region.