KR101670381B1 - Heater of apparatus for removing fume and apparatus for removing fume using the same - Google Patents

Heater of apparatus for removing fume and apparatus for removing fume using the same Download PDF

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Publication number
KR101670381B1
KR101670381B1 KR1020150032920A KR20150032920A KR101670381B1 KR 101670381 B1 KR101670381 B1 KR 101670381B1 KR 1020150032920 A KR1020150032920 A KR 1020150032920A KR 20150032920 A KR20150032920 A KR 20150032920A KR 101670381 B1 KR101670381 B1 KR 101670381B1
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South Korea
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wafer
metal piece
heater
purge gas
cassette
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KR1020150032920A
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Korean (ko)
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KR20160109106A (en
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우범제
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우범제
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6735—Closed carriers
    • H01L21/67389—Closed carriers characterised by atmosphere control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
    • H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
    • H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure
    • H01L2021/60187—Isostatic pressure, e.g. degassing using vacuum or pressurised liquid

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a heater for a fume removing apparatus and a fume removing apparatus using the same, and more particularly, And a fume removing apparatus using the same.

Description

TECHNICAL FIELD [0001] The present invention relates to a heater for removing a fume, and a device for removing the fume using the same.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heater for a fume removing apparatus and a fume removing apparatus using the same and, more particularly, to a heater for a fume removing apparatus in which a metal piece is installed in a heater for a fume removing apparatus.

In general, the semiconductor manufacturing process includes etching, vapor deposition, and etching, and most of the processes are performed while the process gas is filled.

Most of the process gases are vented during the process, but some remain on the wafer surface, affecting wafer damage or polluting the devices used in the process.

In order to solve this problem, Japanese Patent No. 10-1294143 of the present applicant discloses a wafer processing apparatus in which a fume removing function is provided in a cassette of an EFEM itself.

However, in the case of the above-described wafer processing apparatus, there is a disadvantage that the fumes on the entire wafer surface can not be removed uniformly.

Korean Patent Registration No. 1090350 Korean Patent Publication No. 1404621 Korean Patent Registration No. 1294143

Disclosure of Invention Technical Problem [8] Accordingly, the present invention has been made in order to solve the above-mentioned problems, and it is an object of the present invention to provide a heater for a fume removing apparatus and a fume removing apparatus using the same, which can more effectively remove fumes from a wafer and / It has its purpose.

In order to attain the above object, the heater for a foul removing apparatus of the present invention is characterized by comprising a heater for heating the wafer or the periphery of the wafer, and a metal piece provided on the heater.

Wherein the metal piece is provided with a support member for supporting the wafer, the heater is in contact with the metal piece, the metal piece is provided with a through hole through which the heater penetrates, and a plurality of the metal pieces are installed in one heater, The metal piece may be provided with a jet port through which the purge gas is injected.

The metal piece may have an inlet through which the purge gas flows and a through hole through which the heater passes, and the through hole may be disposed adjacent to the inlet.

In order to achieve the above object, a fouling removing apparatus of the present invention includes a cassette on which a wafer is placed, and a heater for heating the wafer or the periphery of the wafer is installed in the cassette, do.

Wherein the metal piece is provided with a support member for supporting the wafer, the heater is disposed in front of the cassette, the heater is formed in a bar shape and arranged on the side of the wafer in the vertical direction, A plurality of metal pieces are stacked, and a spacer is provided between the metal piece and the metal piece, and the metal piece may be formed with a coupling groove into which a panel forming a side wall of the cassette is inserted.

According to the heater for a foul removing apparatus and the foul removing apparatus using the same as described above, the following effects can be obtained.

A metal piece is provided on the heater for the fume removing apparatus so that the heat of the heater can be more effectively transmitted to the wafer and / or the wafer. Further, the temperature distribution inside the cassette can be kept uniform. Therefore, the fumes in the wafer can be removed evenly and effectively.

The metal piece is formed with a supporting member for supporting the wafer, so that the heat of the heater can be more effectively transferred to the wafer.

The heater is brought into contact with the metal piece, heat is transferred through conduction, and moisture removal in the wafer can be more effectively performed.

Wherein the metal piece is provided with a through hole through which the heater penetrates and a plurality of the metal pieces are installed in one of the heaters so that the device is made compact and the metal piece can be easily installed on the heater, The transfer becomes easier.

The metal piece is formed with a jet port through which a purge gas is injected, and the purge gas is more effectively dispersed due to the heat of the heater, so that the fume can be more effectively removed.

The metal piece has an inlet through which the purge gas flows and a through hole through which the heater passes. The through hole is disposed adjacent to the inlet to effectively heat the purge gas, and the apparatus becomes more compact.

The heater is disposed in front of the cassette so that the flow of air is formed from the front to the rear of the wafer to evenly remove the fumes in the wafer.

The heater is formed in a bar shape and arranged on the side of the wafer in a vertical direction. It is possible to transfer heat uniformly and simultaneously to a plurality of wafers.

A plurality of the metal pieces are stacked on one heater, and spacers are provided between the metal pieces and the metal pieces, so that the heat can be more uniformly transferred to the wafer.

The metal piece may be provided with a coupling groove into which a panel forming a side wall of the cassette is inserted, so that the assembling work with other members can be facilitated.

1 is a perspective view of a cassette of a foul removing device according to a preferred embodiment of the present invention.
2 is a perspective view of a metal piece of a foul removing device according to a first embodiment of the present invention.
3 is a perspective view of the metal piece separator of the apparatus for removing foul water according to the second embodiment of the present invention.
4 is an enlarged side view of the first wafer support of the cassette of FIG.
Figure 5 is an enlarged perspective view of the second wafer support of the cassette of Figure 1;

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

For reference, the same components as those of the conventional art will be described with reference to the above-described prior art, and a detailed description thereof will be omitted.

In the embodiment described below, a description will be made of a fume removing apparatus using the heater of the present invention.

As shown in Fig. 1, the fouling removing apparatus of this embodiment includes a cassette 500 on which wafers are loaded.

Further, the apparatus for removing fumes includes a purge gas supply unit (not shown) for supplying gas into the cassette 500, a purge gas discharge unit (not shown) for discharging the discharged purge gas and fumes, (Not shown). Since the purge gas supply unit, the purge gas discharge unit, and the control unit are shown in the related art and the like, a detailed description thereof will be omitted.

1, the cassette 500 includes a first wafer support 510 for supporting the wafer in front, a second wafer support 530 for supporting the wafer in the rear, a first wafer support 510, An exhaust panel 570 connected to the panel 550 and exhausting the fumes, a cassette upper surface 520 disposed on the upper portion of the wafer, A cassette bottom surface 540 disposed at a lower portion thereof, and an exhaust duct 580 connected to the exhaust panel 570.

As described above, the cassette 500 surrounds the front and rear of the wafer and the upper and lower sides thereof, so that the fume removal can be more effective.

The first wafer support 510 is disposed to be spaced on both sides of the front side of the cassette 500. The wafer is introduced into the cassette 500 through the spacing space between the first wafer supports 510 on both sides.

The first wafer supporting portion 510 includes a heater 515 for heating the wafer or the periphery of the wafer and a metal piece 200 provided on the heater 515.

The metal pieces 200 are horizontally arranged and formed into a thin plate shape.

2, the metal piece 200 is provided with an inlet 230 through which the purge gas flows, an injection port through which the purge gas is injected, a flow passage through which the inlet 230 communicates with the injection port, Member 290 is formed.

The metal piece 200 has an arc-shaped concave portion 211 formed on one side thereof facing the wafer. The front side portion 212 is continuously formed at the front end of the concave portion 211 and is narrowed toward the front side. And the first to third through holes 213, 214 and 215 penetrate the upper and lower surfaces of the metal piece 200 and are formed at the rear end of the metal piece 200, An engaging groove 216 is formed.

A support member insertion port 217 is formed in the concave portion 211 so that the support member 290 for supporting the wafer is inserted into the support member insertion port 217, respectively. Therefore, the support member 290 is formed to protrude inward at the inner end of the metal piece 200.

Therefore, the wafer having the same curvature as that of the arc shape of the concave portion 211 is seated on the support member 290, so that the wafer is securely fixed.

In addition, the support member 290 is formed in a bar shape to minimize the contact area with which the wafer is brought into contact, thereby preventing damage to the wafer.

Of course, the concave portion 211 may be formed not only in a circular arc shape, but also a concave portion 211 made of a straight line depending on the design and use of the dehumidifier.

The front face portion 212 is formed to be narrower toward the front of the metal piece 200 so that when the robot arm (not shown) places the wafer on the support member 290, Do not touch it.

The first to third through holes 213, 214 and 215 are also formed in the spacer 511 to be described later. The first through hole 213 and the third through hole 215 are provided with a coupling rod 513, The heater 515 is inserted into the second through hole 214. Thus, the heater 515 is modularized with the metal piece 200, facilitating the assembly process and the part transfer.

A panel 550 constituting a side wall of the cassette 500 is inserted and coupled to the coupling groove 216.

The inlet 230 is formed to pass through the rear upper surface and the lower surface of the metal piece 200 like the first through third through holes 213, 214 and 215 described above.

The inlet 230 is disposed between the first through hole 213 and the second through hole 214.

In this way, the inlet 230 is disposed adjacent to the second through-hole 214 into which the heater 515 is inserted, so that the purge gas can be efficiently heated, and the apparatus becomes more compact.

The purge gas supplied from the purge gas supply unit of the main body 400, which will be described later, is introduced into the flow path through the inlet port 230.

The jetting port includes a first jetting port 251 and a second jetting port 252 formed in the concave portion 211 of the metal piece 200, a third jetting port 253 formed in the front surface portion 212 and a fourth jetting port 254 ).

The flow path is formed in the metal piece 200 and includes first to fourth branched flow paths 272, 273, 274, and 275 branched from the main flow path 271 and the main flow path 271.

The main flow path 271 serves to flow the gas flowing from the inlet port 230 to the first to fourth branch flow paths 272, 273, 274, and 275.

Therefore, the purge gas is supplied from the lower surface of the metal piece 200 and flows from the rear side to the front side through the main flow path 271.

One end of the first branch passage 272 and the other end of the second branch passage 273 are communicated with the main passage 271 and the other end is communicated with the first injection port 251 and the second injection port 272 Respectively.

One end of the third branch passage 274 and one end of the fourth molecular passage 275 are communicated with the main passage 271 and the other end is communicated with the third injection port 253 and the fourth injection port 254 Respectively.

That is, the first branch passage 272, the second branch passage 273, the third branch passage 274 and the fourth branch passage 275 are arranged in the forward direction from the rear of the metal piece 200 in this order, 271, respectively.

The cross sectional area of the main flow path 271 is larger than the cross sectional area of the first to fourth branch flow paths 272, 273, 274 and 275. The main flow path 271 and the first to fourth branch flow paths 272, 273, The purge gas flows smoothly from the main flow path 271 toward the first to fourth branch flow paths 272, 273, 274 and 275 and flows into the first to fourth injection ports 251 and 252 , 253 and 254, respectively.

The cross sectional area of the first branch passage 272 closest to the inlet 230 and the first injection port 251 may be smaller than the cross sectional area of the fourth branch passage 275 and the fourth injection port 254, The amount of the purge gas discharged from the fourth injection port 254 can be increased and the amount of the purge gas discharged from the first injection port 251 can be reduced.

Because of this difference in cross-sectional area, when purge gas is sprayed on the wafer to remove fumes remaining on the wafer, the amount of purge gas injected in the forward direction of the cassette 500 increases, and the amount of purge gas injected in the rearward direction decreases So that the discharged purge gas can easily flow into the exhaust panel 570.

Since the purge gas discharged from the fourth injection port 251 close to the exhaust panel 570 is exhausted through the exhaust panel 570 immediately after the injection of the purge gas, The time for removing the fume of the fume is small.

Accordingly, by reducing the injection amount of the first injection port 251 and increasing the injection amount of the fourth injection port 254 which is the farthest distance from the exhaust panel 570, it is possible not only to efficiently remove the residual fumes on the wafer , And the use amount of the purge gas can be saved.

The first branched flow passage 272 and the main flow passage 271 close to the gas inlet 230 form an acute angle with respect to the inflow direction of the purge gas. The flow paths 273, 274 and 275 and the main flow path 271 are formed at obtuse angles with respect to the inflow direction of the purge gas.

If the main flow path 271 and the branch flow paths are at an acute angle or a right angle, the branched flow path is formed in a direction opposite to the flow of the purge gas, so that the injection amount of the purge gas is injected less.

If the main passage 271 and the branch passage form an obtuse angle, since the branch passage is formed in the flow direction of the purge gas, a large amount of purge gas is injected.

The first branched flow passage 272 having an acute angle with the main flow passage 271 has a smaller injection amount of purge gas than the second to fourth branched flow passages 273, 274 and 275 which are at an obtuse angle with the main flow passage 271 The purge gas can be smoothly flowed to the fourth branch passage 275 farthest from the inlet 230 even if the purge gas supplying portion of the main body 400 supplies the purge gas with a small pressure.

The metal plate 200 'may be formed by coupling the first plate 221 and the second plate 223, which are formed in the same shape as the outer shape of the first plate 221, up and down.

The first plate 221 is formed with a support member insertion port 217 through which a support member 290 for supporting the wafer is inserted into the lower surface of the concave portion 211. In contrast to the second plate 223, No flow path is formed.

A support member insertion port 217 into which the flow path and the support member 290 are inserted is formed on the upper surface of the second plate 223, that is, the surface of the first plate 221 and the second plate 223, .

Of course, the flow path may be formed on the lower surface of the first metal plate 221 rather than the second plate 223.

The fastening member for coupling the first plate 221 and the second plate 223 is a bolt and the first plate 221 and the second plate 223 have a plurality of bolt holes 225.

Further, after the first plate 221 and the second plate 223 are coupled with the bolts, it is preferable to attach a dicing tape (not shown) to the upper surface of the bolt hole 225.

This is to protect the bolt holes 225 on the upper and lower bolts 225 of the metal piece 200 'with the bolt holes 225 to facilitate the Teflon coating to be described later.

Unlike the above, the metal piece 200 'according to the second embodiment can be integrally formed as shown in Fig. That is, the metal piece 200 'according to the second embodiment may be formed as one plate without being formed by combining two plates.

The metal piece 200 of the first embodiment and the metal piece 200 'of the second embodiment are preferably made of metal.

This is because the strength of the metal is stronger than that of plastic, so that the wafer can be supported more securely and the heat conductivity is also high, so that the heater 515 described later can heat the inside of the cassette 500 more effectively when inserted.

It is also preferable that the metal is particularly aluminum among the metals described above. In the case of aluminum, the channel formed in the metal piece 200 'and the channel formed in the second plate 223 can be easily processed, The price is also cheap.

In addition, by forming the anodizing layer by anodizing the aluminum, the metal piece 200 can be further improved in chemical resistance and heat resistance.

When the metal plate 200 is formed by combining the first plate 221 and the second plate 223, anodic oxidation is performed before the first and second plates 221 and 223 are bonded to each other, An anodizing layer) can be formed.

After the first plate 221 and the second plate 223 are joined together, a Teflon coating is applied to the entire metal piece 200 in order to prevent a joint part between the joint surfaces of the first plate 221 and the second plate 223 can do.

Since the first and second metal plates 221 and 223 are separately manufactured and the anodic oxide film is deposited on the metal plate, the anodic oxide film is also applied to the flow channel. Therefore, even if the purge gas flows for a long time, Is reduced.

The metal piece 200 composed of the combination of the first and second metal plates 221 and 223 is made of an aluminum material so that the shape of the metal piece 200 and the flow path can be easily processed, The anode 200 is anodized to form an anodizing layer, thereby preventing corrosion of the flow path.

The heater 515 is formed in a bar shape and arranged on the side of the wafer in a vertical direction. The heater 515 is inserted into the second through hole 214 formed in the metal piece 200 and the second spacer through hole formed in the spacer 511 so as to heat the first wafer accommodating portion 510 to form the cassette 500 ) To remove the moisture inside. The heater 215 is also in contact with the metal piece 200 so that the heater 515 directly heats the first wafer support 510 in a conductive manner and the purge gas flowing inside the metal piece 200 is heated So that the purge gas is more actively flowing in the flow passage and the like to assist the uniform injection of the purge gas.

As shown in FIG. 4, one heater 515 is provided with a plurality of metal pieces 200. That is, a plurality of metal pieces 200 are stacked on one heater. A spacer 511 is disposed between the metal piece 200 and the metal piece 200. As a result, heat can be uniformly and simultaneously transferred to a plurality of wafers.

The spacer 511 includes an inlet 230 formed in the metal piece 200 and a spacer inlet communicating with the first through third through holes 213, 214 and 215 and first through third spacer through holes, And separates the metal piece 200 so that the wafer can freely move when the wafer is inserted into the wafer cassette.

When the first wafer supporting part 510 is heated by the heater 515, the spacing structure of the spacing structure is similar to that of the heat sink, so that not only the thermal conductivity is high but also the heating of the first wafer supporting part 510 Thereby facilitating the cooling of the inside of the fume removing apparatus.

It is preferable that about 20 to 30 metal pieces 200 are provided on the left and right sides, respectively, depending on the number of wafers to be processed in the fouling removing apparatus 300.

The heater 515 is disposed forward of the exhaust panel 570 and disposed in front of the cassette 500. As a result, the flow of air is formed from the front to the rear of the wafer, so that the fumes in the wafer can be removed evenly and effectively.

The coupling rods 513 are inserted into the first and third through holes 213 and 215 formed in the metal piece 200 and the first and third spacer through holes formed in the spacer 511, The upper and lower ends of the cassette 500 are installed on the cassette upper surface 520 and the cassette lower surface 540 so that the first wafer supporting portion 510 is installed on the cassette 500.

As shown in FIG. 5, the second wafer support 530 is disposed on the left and right side surfaces of the rear side of the cassette 500.

The second wafer support 530 is provided with a plurality of support members 290 for supporting wafers to be inserted into the cassette 500.

The second wafer supporting portion 530 is formed in a rod shape having a generally hexagonal cross section, and a seating groove on which the members adjacent to both outer side surfaces are seated is formed. As a result, there is an advantage that the circular wafer can be stably supported and the apparatus becomes compact, and the apparatus can be easily assembled.

Hereinafter, the process of removing the fume of the wafer by spraying the purge gas with the above-described configuration will be described.

In order to remove the fume of the wafer, a robot arm (not shown) inserts the wafer into the cassette 500 of the apparatus.

The wafer transferred by the robot arm is transferred to the support member 290 of the metal piece 200 of the first wafer support portion 510 on the left and right sides of the cassette 500 and the second member Is supported by the support members 290 of the support 530,

Therefore, since the wafer is supported by the four supporting members, the contact area thereof is minimized, and damage to the wafer can be prevented.

In addition, it is preferable that the wafer and the concave portion 211 facing the wafer are slightly spaced apart from each other in order to uniformly inject the purge gas.

That is, when the wafer is supported on the first wafer support portion 510 and the second wafer support portion 530 by setting the distance between the left and right first wafer support portions 510 to be slightly longer than the diameter of the wafer, So that they can be spaced apart and supported.

When the wafer is completely transferred into the cassette 500, the purge gas control unit supplies the purge gas through the purge gas supply unit.

Further, the heater 515 and the upper heater and the lower heater are operated.

Because of this heater 515 and the upper and lower heaters, the wafer and wafer periphery and the inside of the cassette 500 are heated. In particular, the temperature is more uniform due to the heater 515 provided in the metal piece 200, and the heat transfer can be more effectively performed. In addition, the purge gas is also heated by the heater 515 installed in the metal piece 200, so that the fume removal can be more effectively performed, and the moisture removal can be effectively performed.

The supplied purge gas flows into the flow path of the metal piece 200 through the inlet 230 and the flowed purge gas flows through the first to fourth injection ports 251, 252, 253, and 254 to the cassette 500, .

The first and second injection ports 251 and 252 formed in the concave portion 211 of the metal piece 200 inject purge gas along the curvature of the wafer and form third and fourth injection ports 253 , 254) inject gas in the front direction of the wafer.

Particularly, in the case of the purge gas injected from the fourth injection port 254, the purge gas is injected in the inlet direction in which the wafer is inserted, so that harmful external gases existing during the wafer processing process can not enter the inside of the purifier 300 It can also serve as an air curtain.

The thus injected purge gas flows toward the exhaust panel 570 on the rear surface of the cassette 500 together with the fumes remaining on the surface of the wafer.

That is, the purge gases discharged from the front of the cassette 500 flow backward by the rear exhaust panel 570, thereby cleaning the wafer from the front to the rear.

The fumes are introduced into the fume inlet of the exhaust duct 580 through the outlet 571 of the exhaust panel 570 and are discharged to the fume outlet.

This flow of purge gas is performed for each layer of the wafer.

The first to fourth ejection openings 251, 252, 253 and 254 of the metal piece 200 are installed lower than the support member 290 so that the lower surface of the wafer supported by the metal piece 200 is purged Gas is injected.

In this case, in general, the place where the fume of the wafer is cleaned is the upper surface, not the lower surface of the wafer. Accordingly, each metal piece 200 is not a wafer supported by itself but a wafer supported by the metal piece 200 I will clean it.

It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims .

DESCRIPTION OF REFERENCE NUMERALS
200: metal piece 230: inlet
250: jetting port 290: support member
500: Cassette
510: first wafer receiving portion 511: spacer
513: Coupling rod 515: Heater
530: second wafer support part 550: panel
570: Exhaust panel

Claims (12)

A heater for heating the wafer or the periphery of the wafer;
And a metal piece provided on the heater,
Wherein the metal piece is formed with a jetting port through which purge gas is injected into the wafer. The method according to claim 1,
And a support member for supporting the wafer is formed on the metal piece. 3. The method according to claim 1 or 2,
Wherein the heater is in contact with the metal piece. 3. The method according to claim 1 or 2,
Wherein the metal piece has a through-hole through which the heater passes,
And a plurality of the metal pieces are installed in one of the heaters. delete 3. The method according to claim 1 or 2,
Wherein the metal piece has an inlet through which the purge gas flows and a through hole through which the heater passes,
Wherein the through hole is disposed adjacent to the inlet. A cassette on which a wafer is loaded,
Wherein the cassette is provided with a wafer or a heater for heating the periphery of the wafer,
The heater is provided with a metal piece,
Wherein the metal piece is formed with an injection port through which the purge gas is injected into the wafer. 8. The method of claim 7,
And a support member for supporting the wafer is formed on the metal piece. 9. The method according to claim 7 or 8,
Wherein the heater is disposed in front of the cassette. 9. The method according to claim 7 or 8,
Wherein the heater is formed in a bar shape and is disposed on the side of the wafer in a vertical direction. 9. The method according to claim 7 or 8,
Wherein a plurality of the metal pieces are stacked on one heater, and a spacer is provided between the metal piece and the metal piece. 9. The method according to claim 7 or 8,
Wherein the metal piece is formed with a coupling groove into which a panel forming a side wall of the cassette is inserted.
KR1020150032920A 2015-03-10 2015-03-10 Heater of apparatus for removing fume and apparatus for removing fume using the same KR101670381B1 (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101075171B1 (en) * 2011-02-01 2011-10-19 주식회사 에스엠아이 Side storage having gas injection block
KR101444241B1 (en) * 2013-01-14 2014-09-26 우범제 An air exhauster system of the equipment front end module

Family Cites Families (3)

* Cited by examiner, † Cited by third party
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KR101431197B1 (en) * 2008-01-24 2014-09-17 삼성전자주식회사 Equipment for depositing atomic layer
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101075171B1 (en) * 2011-02-01 2011-10-19 주식회사 에스엠아이 Side storage having gas injection block
KR101444241B1 (en) * 2013-01-14 2014-09-26 우범제 An air exhauster system of the equipment front end module

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