KR101622184B1 - Method of fabricating color filter using surface plasmon and method of fabricating liquid crystal display device - Google Patents

Abstract

A color filter using a surface plasmon and a method of manufacturing a liquid crystal display according to the present invention are characterized by forming a transmissive film pattern composed of a plurality of sub-wavelength holes having a periodicity in a metal film, The present invention is characterized in that the transmittance of the panel is improved and the process is simplified at the same time by selectively transmitting only light of a specific wavelength using the plasmon phenomenon to realize color.

In particular, a manufacturing method of using a surface plasmon of the present invention, a color filter and a liquid crystal display device is the first deposition of the same metal oxide and the metal film, the oxide on the metal layer lower portion to form a subsequent transmission layer pattern, and then the oxygen (O ₂₎ The efficiency of transmitted light by the surface plasmons is improved and the adhesion of the metal film to the substrate is enhanced by filling the inside of the transparent film pattern with the metal oxide through the annealing without voids.

Surface plasmon, metal film, metal oxide, oxygen annealing, transmission film pattern

Description

TECHNICAL FIELD [0001] The present invention relates to a color filter using a surface plasmon, and a manufacturing method of a liquid crystal display device using the surface plasmon.

The present invention relates to a color filter using a surface plasmon and a method of manufacturing a liquid crystal display, and more particularly to a surface plasmon having a color filter of a three-dimensional pattern structure having a transparent film pattern selectively transmitting only light of a specific wavelength, And a method of manufacturing a liquid crystal display device.

Recently, interest in information display has increased, and a demand for using portable information media has increased, and a light-weight flat panel display (FPD) that replaces a cathode ray tube (CRT) And research and commercialization are being carried out. Particularly, among such flat panel display devices, a liquid crystal display (LCD) is an apparatus for displaying an image using the optical anisotropy of a liquid crystal, and is excellent in resolution, color display and picture quality and is actively applied to a notebook or a desktop monitor have.

The liquid crystal display comprises a color filter substrate, an array substrate, and a liquid crystal layer formed between the color filter substrate and the array substrate.

Since the manufacturing process of the liquid crystal display device basically requires a number of mask processes, that is, a photolithography process, a method of reducing the number of masks in terms of productivity is required.

Hereinafter, the structure of a typical liquid crystal display device will be described in detail with reference to FIG.

1 is an exploded perspective view schematically showing a general liquid crystal display device.

As shown in the figure, the liquid crystal display comprises a color filter substrate 5, an array substrate 10, and a liquid crystal layer (not shown) formed between the color filter substrate 5 and the array substrate 10 30).

The color filter substrate 5 is a color filter substrate composed of a plurality of sub-pixels 7 that implement the colors of red (R), green (G) and blue (B) A black matrix 6 for separating the filter C and the sub-color filter 7 from each other and shielding light transmitted through the liquid crystal layer 30, and a black matrix 6 for applying a voltage to the liquid crystal layer 30 And a transparent common electrode (8).

The array substrate 10 includes a plurality of gate lines 16 and data lines 17 arranged vertically and horizontally to define a plurality of pixel regions P and a plurality of gate lines 16 and data lines 17, A thin film transistor (TFT) T which is a switching device formed in the intersection region and a pixel electrode 18 formed on the pixel region P.

The color filter substrate 5 and the array substrate 10 constituted as described above are adhered to each other so as to oppose each other by a sealant (not shown) formed on the periphery of the image display area to constitute a liquid crystal display panel, 5 and the array substrate 10 are bonded together through a cemented key (not shown) formed on the color filter substrate 5 or the array substrate 10.

At this time, in order to prevent the defects of the light leakage due to the alignment error during the cementation, an alignment margin is secured by enlarging the line width of the black matrix, thereby decreasing the aperture ratio of the panel.

Conventional color filters used in the liquid crystal display device absorb color and light of unnecessary colors by using dyes or pigments, and transmit only light of colors to be realized, thereby realizing colors. Therefore, It is difficult for the color filter layer to have a transmittance of 30% or more by transmitting only one of the RGB three primary colors in white light. For this reason, the transmission efficiency of the panel is so low that the power consumption by the backlight is increased.

Fig. 2 is an exemplary diagram schematically showing the transmission efficiency of a panel when a color filter using a general pigment dispersion method is used.

Referring to FIG. 3, it can be seen that the light incident from the backlight is reduced in light amount through the polarizer, the TFT array, the liquid crystal, and the color filter, and the transmission efficiency is reduced to less than 5%.

At this time, the polarizing plate, the TFT array, and the color filter each have a transmittance of 40%, 45% to 55%, and 25%, respectively.

In addition, since the conventional color filter must repeat the color resist coating, exposure, development and curing processes for each primary color, the process is complicated. In order to manufacture a color filter on a color filter substrate, a color filter process Line investment, which leads to an increase in line investment costs.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a color filter using a surface plasmon which improves the aperture ratio and transmittance of a panel by forming a color filter having improved transmission efficiency by using surface plasmon phenomenon without using a conventional dye or pigment. And a manufacturing method of the liquid crystal display device.

It is another object of the present invention to provide a color filter using a surface plasmon and a manufacturing method of a liquid crystal display device, wherein the efficiency of transmitted light by the surface plasmon is improved by preventing the occurrence of voids in the transmissive film pattern of the surface plasmon color filter.

Another object of the present invention is to provide a method of manufacturing a color filter and a liquid crystal display device using a surface plasmon, which is capable of enhancing adhesion of a metal film to a substrate and replacing a planarization film.

Other objects and features of the present invention will be described in the following description of the invention and claims.

According to an aspect of the present invention, there is provided a method of fabricating a color filter using surface plasmon comprising the steps of forming a barrier layer of a metal oxide on a substrate, forming a metal layer of the metal on the barrier layer, Forming a transparent film pattern composed of a plurality of holes having a periodicity in the metal film made of metal or less and a plurality of holes of a wavelength shorter than the wavelength of the transparent film pattern, and performing oxygen annealing to surround the metal film and the transparent film pattern, And filling it with an oxide.

The method of manufacturing a liquid crystal display of the present invention may include forming a color filter using the surface plasmon on the first substrate or the second substrate.

At this time, the barrier layer may be formed of the same material as the metal oxide of the metal.
When Al, Cu (Mg), and Ta are used as the metal, Al2O3, MgO, and Ta2O5 may be used as the metal oxide.
The oxygen annealing proceeds in a state in which the metal film is exposed, and the metal oxide may form a dielectric of the same kind as the barrier layer under the metal film.
After the oxygen annealing process, forming an insulating layer on the substrate with the same metal oxide as the metal oxide.

As described above, the color filter using the surface plasmon and the manufacturing method of the liquid crystal display according to the present invention can solve the problem of decreasing the aperture ratio for ensuring the alignment margin since the alignment of the upper and lower substrates is unnecessary, The power consumption of the backlight is reduced by about three times as much as the conventional one.

The color filter using the surface plasmon and the method of manufacturing the liquid crystal display according to the present invention can realize a multi-primary pixel as the power consumption of the backlight is reduced, thereby providing an image of high color reproduction.

The color filter using the surface plasmon and the manufacturing method of the liquid crystal display according to the present invention can improve the efficiency and the color reproducibility of the transmitted light by the surface plasmon by preventing the generation of voids in the transmissive film pattern of the surface plasmon color filter And the adhesion of the metal film to the substrate is enhanced. By uniformly covering the surface plasmon color filter with the insulating layer, the display quality can be improved through the uniform surface plasmon effect, and an additional process for forming the planarization film is not necessary, thereby simplifying the manufacturing process . Further, as the surface of the color filter is uniformly planarized, it is easy to implement the device on the upper side.

Hereinafter, preferred embodiments of a color filter using a surface plasmon and a manufacturing method of a liquid crystal display according to the present invention will be described in detail with reference to the accompanying drawings.

The improvement of the transmissivity through the improvement of the aperture ratio of the existing array substrate is faced with the physical limitations, and therefore, it is necessary to shift the paradigm by improving the transmissivity by removing the color filter rather than improving the aperture ratio.

For this purpose, a method of filtering light by forming a transparent film pattern so that only a specific wavelength of light is selectively transmitted through a predetermined metal film is proposed. A color filter using the surface plasmon phenomenon is formed, And a color filter transmitting blue light.

FIGS. 3A and 3B are a plan view and a cross-sectional view schematically showing the structure of a color filter according to the present invention, which is manufactured using a surface plasmon phenomenon.

Referring to FIG. 6, when a transmissive film pattern 153 having a plurality of sub-wavelength holes having a predetermined period (a) is formed in a predetermined metal film 152, the transmissive film pattern 153 having a near- As the electric field of the incident light and the plasmon are coupled, only light of a specific wavelength is transmitted and all the remaining wavelengths are reflected, thereby obtaining RGB colors.

For example, when a hole pattern of a wavelength shorter than a predetermined period (a) is formed in a silver film, only light of a specific wavelength of red, green, and blue selected according to the hole size (d) and the period (a) So that the RGB color can be realized and the light transmission can transmit a larger amount of light than the hole area as the light around the hole is drawn.

For reference, the plasmon refers to a pseudoparticle in which free electrons induced in the surface of a metal film are collectively vibrated by an electric field of incident light. The surface plasmon refers to a plasmon locally present on the surface of a metal film, And the electromagnetic wave propagating along the interface between the dielectric and the dielectric.

The surface plasmon phenomenon refers to a phenomenon in which light of a specific wavelength and free electrons on a metal film resonate to form light of a specific wavelength when light is incident on a metal film surface having a periodic hole pattern at a nano level, Only light of a specific wavelength capable of forming a surface plasmon by the incident light can pass through the hole, and all the remaining light is reflected by the metal film surface.

In general, a thick metal film has a non-transmissive property with respect to incident light. If the size of the hole formed in the metal film is much smaller than the incident light wavelength, the intensity of transmitted light is remarkably small. However, even if a small hole having a wavelength or less is periodically arranged in the metal film, the transmittance of light is greatly amplified due to the excitation of the surface plasmon. In general, the light or photon does not have its dispersion curve intersecting the dispersion curve of the surface plasmon. Therefore, in order to directly couple the photons to the surface plasmons, a lattice structure of a hole pattern with a certain period is formed on the surface of the metal film to excite the surface plasmons by satisfying the momentum conservation.

By using such characteristics, it becomes possible to transmit light of a desired wavelength by controlling the transmissive film pattern, specifically, the period and size of holes and the thickness of the metal film. In this case, a metal having a square arrangement structure When there is a film, the center peak wavelength of the transmitted light due to the light incident perpendicularly thereto, that is, the surface plasmon resonance wavelength, is given by the following equation (1).

Equation 1

은 금속의 유전 상수이고,

는 금속에 인접한 유전체 물질의 유전 상수이다. 즉, 투과막 패턴의 주기를 바꾸어 주거나 유전체 물질을 변화시킴으로써 표면 플라즈몬 현상에 의해 투과되는 피크 파장을 조절할 수 있다.here,

Is the dielectric constant of the metal,

Is the dielectric constant of the dielectric material adjacent to the metal. That is, it is possible to control the peak wavelength transmitted by the surface plasmon phenomenon by changing the period of the transmissive film pattern or changing the dielectric material.

In this case, the hole of the transmissive film pattern can be changed into various shapes such as an ellipse, a square, a triangle, and a slit as well as a simple circular shape. In case of a circular shape, a hole having a diameter of 100 to 300 nm and a period of 300 to 700 nm Lt; / RTI >

On the other hand, it is advantageous from the viewpoint of efficiency to cover all surfaces of the metal film of the color filter using the surface plasmon with a dielectric having the same refractive index because the surface plasmon is affected by the dielectric constant of the metal and the surrounding dielectric, This is because it is advantageous for efficiency.

At this time, when the dielectric constant value of the peripheral dielectrics is different or when the transmissive film pattern of the color filter is not completely filled with the dielectric, voids are generated in the pattern, the color quality due to the shift of the peak wavelength, .

That is, the transmissive film pattern of the color filter has to be filled with a dielectric material in a nano size but a cavity is created due to a narrow space. In general, when an insulating layer is deposited on the metal film of the color filter to fill the dielectric film in the transparent film pattern of the color filter, an insulating layer is first deposited on the upper and corner portions of the metal film as shown in FIG. 4, Voids are formed in the inner part of the film pattern. These pores create different dielectric constant interfaces in the metal film during the formation of surface plasmons, resulting in wavelength shift or separation phenomena.

5A and 5B are graphs for explaining the peak shift of surface plasmon due to heterogeneous dielectrics and the resulting color mixture.

As shown in the figure, the peak wavelength formed by the surface plasmon is determined by the dielectric constant of the metal and the dielectric material and the lattice constant of the metal crystal, so that the dielectric constant values of the dielectric materials around the metal film of the color filter must match, Only light (A) of a desired wavelength (a) having a sharp peak is emitted. However, since the transmissive film pattern of the color filter, for example, the hole size is as small as several hundred nm, to be.

For example, when a dielectric material having a dielectric constant different from that of the lower substrate is formed on a metal film of a color filter, light (B) of undesired wavelength (b) is generated in addition to light (A) of a desired wavelength (a) The light (A ') having the wavelength (a') of the wavelength?

In addition, although a dielectric having the same dielectric constant as that of the lower substrate is formed on the color filter metal film, when the transparent film pattern of the color filter is not completely filled with the dielectric and voids are generated in the pattern, Light is added to decrease the color purity.

Particularly, the conventional vapor deposition method uses Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (Vapor Deposition). In both methods, the shape of the deposited film depends on the size and the taper of the lower nano structure Can be affected.

If the taper of the lower pattern is close to or more than 90 °, the step coverage may not be sufficient. However, if the taper of the lower pattern is close to or greater than 90 °, The air gap is generated between the films. When the chemical or air penetrates through the pores, the lower layer may be damaged, and in the nanostructure, the pores may change the properties or cause defects. In addition, because of the deposition of the underlying layer, additional processing for planarization is required when planarization is required for subsequent processing.

In order to solve this problem, in the embodiment of the present invention, when a metal oxide such as an oxide of the metal film below the metal film, for example, a Cu (Mg) alloy as a metal film of a surface plasmon is used, MgO is first deposited, and then a permeation film pattern is formed, followed by oxygen annealing, MgO is formed at the boundary of Cu (Mg). At this time, since the MgO is formed and filled in the nano-sized transparent film pattern without voids, the efficiency of transmitted light by the surface plasmon is improved and the adhesion of the metal film to the substrate can be enhanced.

Aluminum (Al), Cu (Mg), and tantalum (Ta) can be used as the surface plasmon metal film, and Al ₂ O ₃ , MgO, and Ta ₂ O ₅ are used as the oxide materials.

6A to 6E are sectional views sequentially illustrating a color filter forming process according to an embodiment of the present invention.

6A, when a Cu (Mg) alloy is used as the metal oxide of the metal film, for example, a metal film of the surface plasmon, on the substrate 110 before forming the metal film, A predetermined barrier layer 111 is formed by depositing MgO which is the same as the oxide.

In this case, the metal oxide is a material generated when the metal is oxidized, which means the same material.

In the case of depositing a metal directly on the substrate 110 made of glass, an abnormality such as peeling of the film may occur due to weakening of the adhesion between the glass made of SiO ₂ and the metal. As a result, The barrier layer 111 is formed of the same metal oxide as the oxide of the metal layer.

At this time, the barrier layer 111 may be deposited to a thickness of 100 to 1500 ANGSTROM in consideration of surface plasma generation in the dielectric.

When Al, Cu (Mg), and Ta are used as the surface plasmon metal film, Al ₂ O ₃ , MgO, and Ta ₂ O ₅ may be used as the oxide material, respectively.

Next, as shown in FIG. 6B, a metal layer 120 is formed on the barrier layer 111 to a thickness of 1000 to 5000 Å. At this time, the metal layer 120 may include a conductive material selected from the group consisting of Al, Cu (Mg), Ta, and the like, or a mixture thereof.

Next, as shown in FIGS. 6C and 6D, a predetermined photoresist pattern 170 is formed on the metal layer 120, and the metal layer 120 under the photoresist pattern 170 is selectively A transparent film pattern 153 having a plurality of holes having a periodicity or less is formed in the metal film 152 so that a color filter 150 that selectively transmits only light of a specific wavelength to realize color is manufactured .

At this time, the holes of the transmissive film pattern 153 may be formed in various shapes such as ellipses, squares, triangles, slits and the like as well as a simple circular shape having a wavelength smaller than a predetermined period.

Next, as shown in FIG. 6E, when oxygen annealing is performed in a state where the metal film 152 is exposed, a metal oxide is formed. At this time, a metal oxide is formed on the barrier layer 111), it becomes easy to form a surface plasmon while surrounding the oxide around the metal film 152. Further, since the metal oxide is filled in the nano-sized transparent film pattern 153, a separate process for filling the transparent film pattern 153 with an insulator such as SiO ₂ becomes unnecessary, Can be prevented.

At this time, the oxygen annealing may be performed at a temperature of 300 to 500 ° C. in a PVD or CVD apparatus, and after the oxygen annealing process, an insulating layer 106 may be additionally formed of the same metal oxide, for example, MgO .

7 and 8 are photographs showing formation of metal oxides by oxygen annealing. It can be seen that MgO, which is an oxide of Cu (Mg), is surrounded on the Cu (Mg) interface.

7 shows the results of annealing for 30 minutes at a temperature of 500 ° C. and an oxygen pressure of 10 mTorr. FIG. 8 shows annealing for 30 minutes at a temperature of 750 ° C. and a vacuum.

As described above, a hole pattern having a specific period and size is formed in a metal film and is used as a color filter by using a surface plasmon phenomenon generated in a metal film, and is applied to a liquid crystal display device to realize a color.

In this case, the conventional color filter is formed on the upper color filter substrate, but the color filter using the surface plasmon suggested in the present invention is not limited to the upper color filter substrate, but can be formed on the lower array substrate or the substrate.

In addition, it is possible to fabricate a thin film transistor through a high-temperature process on a metal film because the metal film functions as a color filter, unlike the conventional pigment or dye type color filter, It is possible to solve the problem that the conventional liquid crystal display device has to reduce the aperture ratio in order to secure an alignment margin for attaching the upper color filter substrate and the lower array substrate.

9 and 10 are sectional views schematically showing a structure of a liquid crystal display device according to an embodiment of the present invention. For convenience of explanation, the same reference numerals are applied to substantially the same constituent elements.

A method of implementing a color filter using such a surface plasmon in a liquid crystal display device is a method of forming a color filter 150 according to an embodiment of the present invention on an upper color filter substrate 105 as shown in FIG. .

At this time, the advantage that can be obtained is that a transmissive film pattern is formed by a one-step process on a single metal film to realize RGB, and it is used instead of the upper ITO common electrode or the rear ITO, Can be saved.

The color filter substrate 105 thus formed is fixed to the array substrate 110 by a sealant (not shown) formed on the outer periphery of the image display area while a certain cell gap is maintained by the column spacer 160, In this case, the array substrate 110 is provided with a plurality of gate lines (not shown) and data lines (not shown) arranged vertically and horizontally to define a plurality of pixel regions, A transistor and a pixel electrode 118 formed on the pixel region are formed.

The thin film transistor includes a gate electrode 121 connected to the gate line, a source electrode 122 connected to the data line, and a drain electrode 123 connected to the pixel electrode 118. The thin film transistor includes a first insulating layer 115a for insulating between the gate electrode 121 and the source and drain electrodes 122 and 123 and a first insulating layer 115b for insulating between the source and drain electrodes 122 and 123 by a gate voltage supplied to the gate electrode 121. [ And an active pattern 124 which forms a conductive channel between the source electrode 122 and the drain electrode 123. [ Reference numerals 115b and 125n denote ohmic contacts for causing ohmic contact between the source / drain regions of the second insulating layer and the active pattern 124 and the source and drain electrodes 122 and 123, respectively. Layer.

On the other hand, the color filter using the surface plasmon has the advantage that it is not damaged by the high temperature process because it uses the metal film. And a color filter is formed on the array substrate by drawing attention to this.

In this case, the color filter 150 using the surface plasmon can be positioned inside the cell, that is, under the thin film transistor array, as shown in FIG. 10, It may be formed on the outer surface.

In this case, the common electrode 108 may be formed on the upper color filter substrate 105 except for the color filter and the black matrix. The color filter 150 using the surface plasmon formed on the array substrate 110 may be a floating filter, Or may be grounded.

When the color filter 150 is formed on the array substrate 110 as described above, it is not necessary to secure a margin for aligning the upper color filter substrate 105 and the lower array substrate 110, Therefore, the transmittance of the panel can be improved. As the panel transmittance is improved, the brightness of the backlight can be reduced, thereby reducing the power consumption for the backlight.

As the power consumption of the backlight is reduced as described above, it is possible to realize a multi-primary-color pixel, thereby providing an effect of obtaining a high-quality color reproduction image.

Further, when the color filter 150 is formed on the array substrate 110 to remove the color filter process line, the facility investment cost and the construction cost can be reduced by about 50%.

Hereinafter, a structure of a liquid crystal display device and a manufacturing method thereof when a color filter using the surface plasmon is formed on an array substrate will be described in detail with reference to the drawings.

11 is a plan view schematically showing a part of an array substrate of a liquid crystal display according to an embodiment of the present invention shown in FIG.

In this case, for convenience of explanation, one pixel composed of sub-color filters corresponding to blue, red and green is shown from the left for example. However, the present invention is not limited thereto, and the present invention can also be applied to a case of implementing multi-primary colors of three or more colors.

The sub-pixels corresponding to blue, red and green are substantially identical to each other except for the structure of the color filter, that is, the size and the interval of the holes of the transmissive film pattern.

In addition, the liquid crystal display according to the embodiment of the present invention is exemplified by a twisted nematic (TN) liquid crystal display device that drives nematic liquid crystal molecules in a direction perpendicular to a substrate, But is not limited thereto.

As shown in the drawing, a gate line 116 and a data line 117 are formed on an array substrate 110 on the array substrate 110 in the vertical and horizontal directions to define pixel regions have. A thin film transistor, which is a switching element, is formed in the intersection region of the gate line 116 and the data line 117. A pixel electrode of the thin film transistor is connected to the common electrode of the color filter substrate 105 And a pixel electrode 118 for driving the liquid crystal layer are formed.

The thin film transistor includes a gate electrode 121 constituting a part of the gate line 116, a source electrode 122 connected to the data line 117 and a drain electrode 123 connected to the pixel electrode 118 do. The thin film transistor includes a first insulating layer (not shown) for insulating the gate electrode 121 from the source / drain electrodes 122 and 123 and a second insulating layer (Not shown) that forms a conduction channel between the source electrode 122 and the drain electrode 123.

A part of the source electrode 122 extends in one direction to constitute a part of the data line 117. A part of the drain electrode 123 extends toward the pixel region and is connected to a second insulating film (not shown) And is electrically connected to the pixel electrode 118 through the formed contact hole 140.

Particularly, a color filter 150 using a surface plasmon according to an embodiment of the present invention is disposed on the array substrate 110. The color filter 150 has a predetermined wavelength within a predetermined metal film 152, And a transparent film pattern 153 composed of a plurality of holes are formed so that an electric field of an incident light having a near infrared ray band in visible light is coupled with a plasmon, and only light of wavelengths corresponding to blue, red and green is transmitted, And all of them are reflected to obtain RGB colors.

At this time, the transmissive film pattern 153 is formed in the pixel region except the region where the gate line 116, the data line 117, and the thin film transistor are located.

FIGS. 12A to 12F are sectional views sequentially showing the manufacturing process of the liquid crystal display device shown in FIG. 10, and FIGS. 13A to 13E are plan views sequentially showing the manufacturing process of the array substrate shown in FIG.

12A and 13A, a color filter 150 using a surface plasmon according to an embodiment of the present invention is formed on an array substrate 110 made of a transparent insulating material such as glass.

At this time, the color filter 150 is formed with a transparent film pattern 153 formed of a plurality of holes having a predetermined period or less and having a wavelength of not more than a certain period in the predetermined metal film 152, so that the electric field of the incident light having a near- And only the light of the wavelength corresponding to blue, red and green is transmitted, and all the remaining wavelengths are reflected, thereby obtaining RGB color.

At this time, the hole pattern of the transmissive film pattern 153 may be formed in various shapes such as ellipses, squares, triangles, slits and the like as well as a simple circular shape having a wavelength smaller than a predetermined period.

In particular, as described above, the barrier layer 111 made of the same metal oxide as the oxide of the metal film 152 is formed under the color filter 150 according to the embodiment of the present invention, The efficiency of transmitted light by the surface plasmon is improved by filling the inside of the transmissive film pattern 153 with a metal oxide without voids and the adhesion of the metal film 152 to the substrate 111 can be enhanced .

In this case, the metal layer 152 may be made of Al, Cu (Mg), or Ta, and the dielectric layer and the dielectric layer 106 in the barrier layer 111, And the oxides of the metal film 152, i.e., Al ₂ O ₃ , MgO, and Ta ₂ O ₅ .

The color filter 150 thus formed is formed with a transparent film pattern 153 formed of a plurality of holes having a predetermined period or less in a predetermined period in a predetermined metal film 152 to realize RGB colors.

In the color filter 150 according to the embodiment of the present invention having the above structure, the blue color is selectively transmitted through the transmissive film pattern for blue color in the blue color region, and the blue color is selectively transmitted through the transmissive film pattern for red color in the red color region. And the green color is selectively transmitted through the transmissive film pattern for the green color in the green color area, thereby realizing the RGB color.

Next, as shown in FIGS. 12B and 13B, the gate electrode 121 and the gate line 116 are formed on the array substrate 110 on which the insulating layer 106 is formed.

At this time, the gate electrode 121 and the gate line 116 are formed by selectively depositing a first conductive film on the entire surface of the array substrate 110 and then performing a photolithography process.

Here, as the first conductive film, a low resistance opaque conductive material such as aluminum, aluminum alloy, tungsten, copper, chromium, molybdenum, or molybdenum alloy may be used. The first conductive film may be formed of a multilayer structure in which two or more low resistance conductive materials are stacked.

Next, as shown in FIGS. 12C and 13C, a first insulating layer 115a, an amorphous silicon thin film, an n + amorphous silicon thin film, and a second insulating film are formed on the entire surface of the array substrate 110 on which the gate electrode 121 and the gate line 116 are formed. And an active pattern 124 of the amorphous silicon thin film is formed on the array substrate 110 by selectively removing the second conductive film through a photolithography process to form the second conductive film, Source / drain electrodes 122 and 123 electrically connected to the source / drain regions of the active pattern 124 are formed.

In addition, the data line 117, which is formed of the second conductive film through the photolithography process and crosses the gate line 116 and defines a pixel region, is formed.

At this time, an ohmic contact layer 125n formed of the n + amorphous silicon thin film and patterned in the same shape as the source / drain electrodes 122 and 123 is formed on the active pattern 124.

An amorphous silicon thin film pattern (not shown) and an n + amorphous silicon thin film (not shown) formed of the amorphous silicon thin film and the n + amorphous silicon thin film and substantially patterned in the same manner as the data line 117 are formed under the data line 117, A pattern (not shown) is formed.

Here, the active pattern 124, the source / drain electrodes 122 and 123, and the data line 117 according to the embodiment of the present invention may be simultaneously formed by a single mask process using a half-tone mask or a diffraction mask .

At this time, the second conductive layer may be formed of a low-resistance opaque conductive material such as aluminum, aluminum alloy, tungsten, copper, chromium, molybdenum and molybdenum alloy to form a source electrode, a drain electrode and a data line. The second conductive layer may be formed in a multi-layered structure in which two or more low-resistance conductive materials are stacked.

12D and 13D, a second insulating layer 115b is formed on the entire surface of the array substrate 110 on which the active pattern 124, the source / drain electrodes 122 and 123, and the data line 117 are formed. The second insulating layer 115b is selectively removed through a photolithography process to form a contact hole 140 exposing a part of the drain electrode 123 on the array substrate 110. [

Here, the second insulating layer 115b may be an inorganic insulating layer such as a silicon nitride layer or a silicon oxide layer, or may be an organic insulating layer such as photo acrylic or benzocyclobutene (BCB).

Next, as shown in FIGS. 12E and 13E, a third conductive layer is formed on the entire surface of the array substrate 110 on which the second insulating layer 115b is formed, and then selectively removed through a photolithography process, A pixel electrode 118 electrically connected to the drain electrode 123 is formed through the gate electrode 140.

Here, the third conductive layer may include a transparent conductive material having a high transmittance such as indium tin oxide (ITO) or indium zinc oxide (IZO) to form a pixel electrode.

The array substrate according to the embodiment of the present invention manufactured as described above is formed by a sealant (not shown) formed on the periphery of the image display region in a state where a certain cell gap is maintained by the column spacer 160 as shown in FIG. So that the color filter substrate 105 and the color filter substrate 105 are bonded together.

At this time, the common electrode 108 may be formed on the color filter substrate 105 except for the color filter and the black matrix.

Although the amorphous silicon thin film transistor using the amorphous silicon thin film as the active layer is described as an example of the present invention, the present invention is not limited thereto, and the present invention can be applied to the polycrystalline silicon thin film using the polycrystalline silicon thin film as the active layer Transistor and an oxide thin film transistor using an oxide semiconductor.

In addition, the present invention can be applied not only to a liquid crystal display device but also to other display devices manufactured using thin film transistors, for example, organic electroluminescent display devices in which organic light emitting diodes (OLEDs) have.

While a great many are described in the foregoing description, it should be construed as an example of preferred embodiments rather than limiting the scope of the invention. Therefore, the invention should not be construed as limited to the embodiments described, but should be determined by equivalents to the appended claims and the claims.

1 is an exploded perspective view schematically showing a structure of a general liquid crystal display device.

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a color filter.

FIGS. 3A and 3B are a plan view and a cross-sectional view schematically showing a structure of a color filter according to the present invention, which is manufactured using a surface plasmon phenomenon. FIG.

4 is a photograph showing the occurrence of voids when an insulating layer is deposited on a metal film.

5A and 5B are graphs for explaining the peak shift of surface plasmon due to heterogeneous dielectrics and the resulting color mixture.

6A to 6E are sectional views sequentially illustrating a color filter forming process according to an embodiment of the present invention.

Figures 7 and 8 are photographs showing metal oxide formation by oxygen annealing.

9 is a cross-sectional view schematically showing the structure of a liquid crystal display device according to an embodiment of the present invention.

10 is a cross-sectional view schematically showing another structure of a liquid crystal display device according to an embodiment of the present invention.

11 is a plan view schematically showing a part of an array substrate of a liquid crystal display device according to an embodiment of the present invention shown in FIG.

12A to 12F are sectional views sequentially showing a manufacturing process of the liquid crystal display device shown in FIG. 10;

FIGS. 13A to 13E are plan views sequentially showing the manufacturing steps of the array substrate shown in FIG. 11; FIG.

DESCRIPTION OF REFERENCE NUMERALS

105: color filter substrate 106: insulating layer

110: array substrate 111: barrier layer

116: gate line 117: data line

118: pixel electrode 121: gate electrode

122: source electrode 123: drain electrode

150: Color filter 152: Metal film

153: Permeation film pattern

Claims (15)

Forming a barrier layer of a metal oxide on the substrate; Forming a metal layer made of the metal on the barrier layer; Selectively patterning the metal layer to form a transmissive film pattern having a plurality of holes having a periodicity or less within a metal film made of the metal; And And performing oxygen annealing to fill the metal film and the transparent film pattern with the metal oxide of the metal. The method of manufacturing a color filter according to claim 1, wherein the barrier layer is formed of the same material as the metal oxide of the metal. The method of claim 1, wherein when Al is used as the metal, the surface plasmon using Al ₂ O ₃ is used as the metal oxide. The method according to claim 1, wherein, when Cu (Mg) is used as the metal, the surface plasmon using MgO is used as the metal oxide. The method according to claim 1, wherein when Ta is used as the metal, a surface plasmon using Ta ₂ O ₅ is used as the metal oxide. The method of claim 1, wherein the barrier layer is formed to a thickness of 100 to 1500 ANGSTROM. The method of claim 1, wherein the oxygen annealing is performed with the metal film exposed, wherein the metal oxide is formed of a dielectric material of the same kind as the barrier layer under the metal film. The method of claim 1, wherein the oxygen annealing is performed in a PVD or CVD apparatus at a temperature of 300 to 500 ° C. The method of claim 1, further comprising, after the oxygen annealing process, forming an insulating layer on the substrate with the same metal oxide as the metal oxide. Forming a barrier layer made of a metal oxide on the first substrate; Forming a metal layer made of the metal on the barrier layer; Selectively patterning the metal layer to form a transmissive film pattern having a plurality of holes having a periodicity or less within a metal film made of the metal; Performing oxygen annealing to fill the metal film and the inside of the transparent film pattern with the metal oxide of the metal; Forming an insulating layer on the metal film including the transparent film pattern with a dielectric material identical to the metal oxide; Forming a thin film transistor on the insulating layer; And And bonding the first substrate and the second substrate to each other. Forming a thin film transistor on the first substrate; Forming a barrier layer made of a metal oxide on the second substrate; Forming a metal layer made of the metal on the barrier layer; Selectively patterning the metal layer to form a transmissive film pattern having a plurality of holes having a periodicity or less within a metal film made of the metal; Performing oxygen annealing to fill the metal film and the inside of the transparent film pattern with the metal oxide of the metal; Forming an insulating layer on the metal film including the transparent film pattern with a dielectric material identical to the metal oxide; And And bonding the first substrate and the second substrate to each other. The method of manufacturing a liquid crystal display device according to any one of claims 10 and 11, wherein the barrier layer is formed of the same material as the metal oxide of the metal. The method of manufacturing a liquid crystal display device according to claim 12, wherein Al, Cu (Mg) and Ta are used as the metal, Al ₂ O ₃ , MgO and Ta ₂ O ₅ are used as the metal oxide, respectively. 13. The manufacturing method of a liquid crystal display device according to claim 12, wherein the oxygen annealing proceeds in a state in which the metal film is exposed, and a metal oxide is formed to form a dielectric of the same kind as the barrier layer under the metal film. 13. The method of claim 12, wherein the oxygen annealing is performed at a temperature of 300 to 500 DEG C in PVD or CVD equipment.

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