KR101622181B1 - Micro shutter display device and method of fabricating the same - Google Patents

Abstract

A micro-shutter display device and a method of manufacturing the same according to the present invention are characterized in that a display device using a micro shutter is provided with a three-dimensional (3D) display device having a transparent film pattern selectively transmitting only light of a specific wavelength using a surface plasmon phenomenon. And the pattern structure is applied to the color filter.

Further, the micro-shutter display device and the manufacturing method thereof according to the present invention are characterized in that manufacturing cost and equipment investment cost are reduced by using the metal film of the color filter as a floating electrode.

A micro shutter, a surface plasmon, a metal film, a transparent film pattern, a floating electrode

Description

TECHNICAL FIELD [0001] The present invention relates to a micro-shutter display device and a method of manufacturing the same,

The present invention relates to a micro-shutter display device and a method of manufacturing the same, and more particularly, to a display device using a micro-shutter, including a color filter having a three-dimensional pattern structure having a transparent film pattern selectively transmitting only light of a specific wavelength And a method of manufacturing the same.

Recently, interest in information display has increased, and a demand for using portable information media has increased, and a light-weight flat panel display (FPD) that replaces a cathode ray tube (CRT) And research and commercialization are being carried out. Among such flat panel display devices, a liquid crystal display (LCD) is an apparatus that displays an image using optical anisotropy of a liquid crystal, and is excellent in resolution, color display, and image quality and is actively applied to a notebook or desktop monitor.

The liquid crystal display comprises a color filter substrate, an array substrate, and a liquid crystal layer formed between the color filter substrate and the array substrate.

Hereinafter, the structure of a typical liquid crystal display device will be described in detail with reference to FIG.

1 is an exploded perspective view schematically showing a general liquid crystal display device.

As shown in the figure, the liquid crystal display comprises a color filter substrate 5, an array substrate 10, and a liquid crystal layer (not shown) formed between the color filter substrate 5 and the array substrate 10 30).

The color filter substrate 5 includes a color filter C composed of a plurality of sub-color filters 7 implementing colors of red (R), green (G) and blue (B) A black matrix 6 for separating the sub-color filters 7 from each other and shielding light transmitted through the liquid crystal layer 30 and a transparent common electrode for applying a voltage to the liquid crystal layer 30 8).

The array substrate 10 includes a plurality of gate lines 16 and data lines 17 arranged vertically and horizontally to define a plurality of pixel regions P and a plurality of gate lines 16 and data lines 17 A thin film transistor (TFT) T which is a switching device formed in the intersection region and a pixel electrode 18 formed on the pixel region P.

The color filter substrate 5 and the array substrate 10 constituted as described above are adhered to each other so as to oppose each other by a sealant (not shown) formed on the periphery of the image display area to constitute a liquid crystal display panel, 5 and the array substrate 10 are bonded together through a cemented key (not shown) formed on the color filter substrate 5 or the array substrate 10.

At this time, in order to prevent the defects of the light leakage due to the alignment error during the cementation, an alignment margin is secured by enlarging the line width of the black matrix, thereby decreasing the aperture ratio of the panel.

In addition, the liquid crystal display device has a disadvantage in that the response speed is slow.

Particularly, in the conventional color filter used in the color display device including the liquid crystal display device, since the unnecessary color light is absorbed by the dye or pigment and is extinguished, By transmitting only one of the RGB three primary colors in the white light incident on the basis of the sub-pixel, the transmittance is hardly more than 30%. For this reason, the transmission efficiency of the panel is so low that the power consumption by the backlight is increased.

Fig. 2 is an exemplary diagram schematically showing the transmission efficiency of a panel when a color filter using a general pigment dispersion method is used.

Referring to FIG. 3, it can be seen that the light incident from the backlight is reduced in light amount through the polarizer, the TFT array, the liquid crystal, and the color filter, and the transmission efficiency is reduced to less than 5%.

At this time, the polarizing plate, the TFT array, and the color filter each have a transmittance of about 40%, 45% to 55%, and about 25%, respectively.

In addition, since the conventional color filter is required to repeatedly apply the color resist coating, exposure, developing and curing processes for each primary color, the process is complicated. In order to manufacture a color filter, a common electrode and a black matrix on a color filter substrate, The need to operate the color filter process line separately from the line increases the investment cost of the line.

Therefore, it is required to develop a display device of a new type which will overcome the shortcomings of existing flat panel display devices including such a liquid crystal display device.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and it is an object of the present invention to provide a micro-shutter display device and a method of fabricating the same, which can improve the aperture ratio and the transmittance of a panel by forming a color filter having improved transmission efficiency using surface plasmon phenomenon without using a conventional dye or pigment. And a manufacturing method thereof.

Another object of the present invention is to provide a micro-shutter display device and a method of manufacturing the same that simplify the manufacturing process by forming the color filter on a single substrate having a micro shutter and using a metal film of the color filter as a floating electrode .

Other objects and features of the present invention will be described in the following description of the invention and claims.

In order to achieve the above object, a micro-shutter display device of the present invention is provided on a substrate and includes a transparent film pattern having a predetermined period or less in a metal film to selectively transmit light of a specific wavelength to realize color And a color filter. In addition, a plurality of microelectrodes, which have a conductive thin film shape on the substrate including the color filter and the insulating layer, a plurality of address electrodes and the thin film transistor, and which are opened and closed by the electrostatic force with the metal film of the color filter, And a shutter.

A method of manufacturing a micro-shutter display device of the present invention includes forming a color filter on a substrate to form a transparent film pattern having a predetermined period or less in a metal film and selectively transmitting light of a specific wavelength to realize color . The method may further include forming a thin film transistor and a plurality of address electrodes on the substrate on which the color filter and the insulating layer are formed. And forming a plurality of micro shutters, which are formed in the form of a conductive thin film on the substrate on which the thin film transistor is formed, and which are opened or closed by an electrostatic force with the metal film of the color filter.

As described above, the micro-shutter display device and the method of manufacturing the same according to the present invention can solve the problem of decreasing the aperture ratio for ensuring the alignment margin because alignment of the upper and lower substrates is unnecessary by implementing the display device of a single substrate, And the power consumption of the backlight is reduced as the transmission efficiency of the backlight increases by about three times as compared with the conventional one.

Further, the micro-shutter display device and the method of manufacturing the same according to the present invention provide the effect of reducing the weight of the display device by about 30% by using a single substrate.

Further, the micro-shutter display device and the manufacturing method thereof according to the present invention can reduce the manufacturing cost by simplifying the manufacturing process and removing parts, while eliminating the color filter process line, thereby reducing the facility investment cost and the construction cost by about 50% Provides a possible effect.

Hereinafter, preferred embodiments of a micro-shutter display device and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.

The present invention proposes a new type of display device that can compensate for the disadvantages of the conventional flat panel display device. In particular, the present invention relates to a micro-shutter display device, and more particularly, to a three-dimensional display device having a transparent film pattern for selectively transmitting light of a specific wavelength, The pattern structure is applied to the color filter while the metal film of the color filter is used as the floating electrode of the micro-shutter display device.

3 is a diagram for explaining a driving method of a micro-shutter display device according to the present invention.

As shown in the figure, the micro-shutter display device transmits or blocks the incident light incident from the lower backlight through the lower backlight through the electrostatic induction between the lower floating electrode and the upper metal shutter.

In order to drive the micro-shutter at a low voltage, the micro-shutter may have a roll shape or a curved shape, and may have a thermal expansion coefficient of two materials such as a metal- and the coefficient of thermal expansion.

Such a micro-shutter display device has a strong restoring force to return to the original state while having a large displacement motion due to the structural advantage of a roll shape. In addition, it has a very large advantage of having a low driving voltage and a fast response speed to an applied voltage.

On the other hand, the improvement of the transmissivity through the improvement of the aperture ratio of the existing array substrate is faced with a physical limitation, and therefore, it is necessary to shift the paradigm by improving the transmissivity by removing the color filter rather than improving the aperture ratio.

For this purpose, a method of filtering a light by forming a transmissive film pattern so that only a specific wavelength of light is selectively transmitted through the metal film is proposed, and a metal film color filter using the surface plasmon phenomenon is formed, And a color filter transmitting blue light.

FIGS. 4A and 4B are a plan view and a cross-sectional view schematically showing the structure of a color filter according to the present invention, which is manufactured using a surface plasmon phenomenon.

Referring to FIG. 1, when a sub-wavelength transmissive film pattern 153 having a predetermined period L is formed in a predetermined metal film 152, an electric field of an incident light having a near- As the plasmons are coupled, only light of a specific wavelength is transmitted, and all the remaining wavelengths are reflected, thereby obtaining RGB colors.

For example, when a hole pattern of a wavelength shorter than a predetermined period L is formed in a silver film, only light of a specific wavelength of red, green, and blue selected according to the hole size d and the period L So that the RGB color can be realized and the light transmission can transmit a larger amount of light than the hole area as the light around the hole is drawn.

The size (d) and the period (L) of the holes and the arrangement of the holes can be controlled in order to realize a high-purity color. As shown in the figure, the thicknesses of the metal film patterns 152 corresponding to the respective wavelengths are different But the present invention is not limited thereto.

For reference, the plasmon refers to a quasi-particle in which free electrons induced on a metal surface are vibrated collectively by an electric field of incident light. The surface plasmon refers to a plasmon locally present on a metal surface. It corresponds to the electromagnetic wave traveling along the interface.

The surface plasmon phenomenon refers to a phenomenon in which light of a specific wavelength and free electrons of a metal surface resonate to form light of a specific wavelength when light is incident on a metal surface having a periodic hole pattern at a nano level, Only light of a specific wavelength capable of forming surface plasmon by light can penetrate the hole, and all the remaining light is reflected by the metal surface.

By using such characteristics, it is possible to separate the multi-primary color from the white light by transmitting only the desired light by controlling the period of the transmissive film pattern. At this time, the transmitted light has a wavelength corresponding to about 1.7 to 2 times the lattice period, that is, the interval of the transmissive film pattern. Therefore, it is possible to transmit light of a desired wavelength by adjusting the period of the transmissive film pattern.

At this time, the transmissive film pattern can be changed into various shapes such as ellipses, squares, triangles, and slits as well as a simple circular shape such as a hole. In case of a hole, the size, that is, the diameter is 100 to 300 nm and the interval is 300 to 700 nm Lt; / RTI > In order to transmit blue light having a wavelength of 436 nm, the spacing and size of holes are set to about 300 nm and 155 nm, respectively. In order for green light having a wavelength of 538 nm to pass through, the spacing and size of holes may be set to about 450 nm and 180 nm, respectively In order to transmit red light having a wavelength of 627 nm, the interval and size of holes may be set to about 550 nm and 225 nm, respectively.

As described above, a hole pattern having a specific period and size is formed on a metal film and is used as a color filter by using a surface plasmon phenomenon generated in a metal film, and the color is realized by applying this to a micro-shutter display device of the present invention .

At this time, although the conventional color filter is formed on the upper color filter substrate, the color filter using the surface plasmon suggested in the present invention can be formed on the lower array substrate instead of the upper color filter substrate.

That is, it is possible to fabricate a thin film transistor through a high-temperature process on a metal film because the metal film functions as a color filter, unlike a color filter of a conventional pigment or dye type, It is possible to solve the problem that the conventional display device has to reduce the aperture ratio in order to secure an alignment margin for attaching the upper color filter substrate and the lower array substrate.

Particularly, as in the present invention, a driver and a color filter are formed together on a single substrate while the metal film of the color filter is used as a floating electrode of a micro-shutter display device, thereby simplifying the process or even removing the upper color filter substrate Technology, which has a large ripple effect.

That is, as described above, the micro-shutter display device transmits or blocks light through electrostatic induction between the lower floating electrode and the upper metal shutter to realize a screen display. In this case, in the case of the transmission type, the lower floating electrode must utilize a transparent electrode for transmitting light. The material of the transparent electrode is a rare metal, which is considerably higher than other metal materials, resulting in an increase in manufacturing cost and a signal delay due to a high resistance, thereby lowering the quality of the screen.

In addition, the micro-shutter display device displays the gray level of the screen by adjusting the amount of light transmitted through the backlight, but a color filter must be applied to the upper substrate to realize various colors.

If the color filter is formed on a separate substrate and the two substrates are bonded to each other, the weight of the display device increases, and the cost of equipment investment and material cost for manufacturing a separate color filter are increased.

Accordingly, the micro-shutter display device of the present invention realizes a color filter using the surface plasmon phenomenon, and forms the color filter by forming the color filter on the array substrate and utilizing the metal film of the color filter as the floating electrode of the micro- Thereby reducing manufacturing cost by reducing process time, materials, mask and equipment investment costs.

Further, by integrating the driving unit and the color filter on a single substrate as described above, it is possible to realize weight reduction and slim display of the display device.

5 is a plan view schematically showing a part of a micro-shutter display device according to an embodiment of the present invention, and schematically shows a part of an array substrate. 6 is a cross-sectional view schematically showing a structure of a micro-shutter display device according to an embodiment of the present invention.

5 illustrates an array substrate in which a voltage is not applied and a micro shutter is open.

In this case, for convenience of explanation, one pixel composed of sub-color filters corresponding to blue, red and green is shown from the left side of FIG. 5, for example. However, the present invention is not limited thereto, and the present invention can also be applied to a case of implementing multi-primary colors of three or more colors.

The sub-pixels corresponding to blue, red and green are substantially identical to each other except for the structure of the color filter, that is, the size and the interval of the transmissive film pattern.

As shown in the drawing, a metal film 152 serving as a floating electrode is formed on the array substrate 110 according to an embodiment of the present invention, and a transparent film 152 And a pattern 153 is formed to form a color filter 150 that implements color. A predetermined insulating layer 106 may be formed on the insulating layer 106. A gate line 116 and a data line 117 may be formed on the insulating layer 106 to define a pixel region. A thin film transistor which is a switching device may be formed at an intersection of the gate line 116 and the data line 117. The array substrate 110, which opposes the metal film 152 of the color filter 150, A plurality of address electrodes 165 and a plurality of micro shutter 160 in the form of a conductive thin film having one side connected to the address electrode 165 and the other side having a concave shape with respect to the array substrate 110 are formed on the upper side . The micro shutter 160 may have one of a U-shape or a semi-ellipse as well as the illustrated semi-circular shape.

As described above, the metal film 152 of the color filter 150 is formed in a box shape over the entire pixel portion, and is used as a floating electrode which is an opposite electrode of the micro shutter 160. In the metal film 152, And the plasmon is coupled with the electric field of the incident light having the near infrared ray band in the visible light, so that only light of wavelengths corresponding to blue, red and green is transmitted, and the remaining wavelengths So that a color filter 150 that implements RGB colors is formed.

At this time, in order to transmit blue light having a wavelength of 436 nm as described above, the interval and size of the transparent film pattern 153, for example, holes are set to about 300 nm and 155 nm, respectively, and red light having a wavelength of 627 nm is transmitted The spacing and size of the holes can be set to about 550 nm and 225 nm, respectively. In order for green light having a wavelength of 538 nm to pass through, the spacing and size of holes can be set to about 450 nm and 180 nm, respectively.

The thin film transistor includes a gate electrode 121 constituting a part of the gate line 116, a source electrode 122 connected to the data line 117 and a drain electrode 123 connected to the micro shutter 160 do. The thin film transistor includes an insulating film 115 for insulating the gate electrode 121 from the source and drain electrodes 122 and 123 and a gate electrode 121 formed on the source electrode 122 by a gate voltage supplied to the gate electrode 121. [ And an active pattern 124 that forms a conduction channel between the source and drain electrodes 123 and 123. Although the thin film transistor having the U-shaped shape of the source electrode 122 and the U-shaped channel is shown in the drawing, the present invention is not limited to this, It can be applied regardless of the channel type of the transistor.

An insulating layer 115 and an insulating layer 106 are formed between the metal film 152 of the color filter 150 and the micro shutter 160 to form a metal film 152 of the color filter 150 and a micro shutter 160 Are insulated from each other.

The micro shutter 160 is electrically connected to the address electrode 165 formed on the insulating layer 115 and receives a voltage through the address electrode 165. The address electrodes 165 are fixed to the address electrodes 165 when the address electrodes 165 are opened and closed, and the other portions of the address electrodes 165 are opened and closed.

The plurality of address electrodes 165 are arranged in a zigzag form in the pixel region from top to bottom, and the plurality of micro shutters 160 are connected to the plurality of address electrodes 165, Respectively. However, the present invention is not limited to the method of arranging the address electrodes 165 and the micro shutter 160, and it is only necessary that the micro shutter 160 is opened and closed in order to express various gradations according to the application of a voltage.

The micro shutter 160 may be formed of a material suitable for blocking light incident from a lower backlight (not shown) and being opened and closed by an electrostatic force. The micro shutter 160 may include a plurality of Layer. For example, the micro shutter 160 may be made of a conductive metal material such as aluminum, molybdenum, copper, or gold.

When a voltage is applied to a micro-shutter array composed of one lower floating electrode, that is, a metal film 152 and a plurality of micro-shutters 160, the micro-shutter display device according to the embodiment of the present invention, The corresponding micro shutter 160 is partially overlapped with the address electrode 165 according to the magnitude of the voltage, so that the micro shutter 160 is blocked while reflecting the light of the backlight source. In the opposite case, the corresponding micro shutter 160 maintains the original shape, and therefore, the light is transmitted.

In order to secure a space for driving the micro shutter, the array substrate formed in this way is attached to a plastic substrate or a transparent film to complete the display device.

When a color filter is formed on the array substrate, it is unnecessary to secure a margin for alignment between the upper substrate and the lower array substrate. Accordingly, an aperture ratio can be further secured when the panel is designed. Accordingly, Three times can be improved. As the panel transmittance is improved, the brightness of the backlight can be reduced, thereby reducing the power consumption for the backlight.

In addition, since a color filter is formed on an array substrate and the metal film of the color filter is used as a floating electrode, the manufacturing cost can be reduced by simplifying the manufacturing process and removing parts, and the color filter process line can be eliminated, It is possible to save about 50%.

Also, the use of a single substrate provides the effect of reducing the weight of the display by about 30%.

Hereinafter, a method of manufacturing a micro-shutter display device according to an embodiment of the present invention will be described in detail with reference to the drawings.

FIGS. 7A to 7D are plan views sequentially showing manufacturing steps of the micro-shutter display device shown in FIG.

8A to 8E are cross-sectional views sequentially showing manufacturing steps of the micro-shutter display device shown in FIG.

As shown in FIGS. 7A and 8A, a predetermined color filter 150 using surface plasmon is formed on an array substrate 110 made of a transparent insulating material such as glass.

At this time, in the color filter 150, a transmissive film pattern 153 having a predetermined period or less is formed in a predetermined metal film 152 to realize the RGB color. The transmissive film pattern 153 is formed of a light- (Spin on glass), organic or inorganic materials having excellent transparency and excellent optical properties can be selected and used. As the material of the metal film 152, for example, aluminum, molybdenum, copper, gold , Silver, chromium, or the like can be used.

Particularly, the metal film 152 of the color filter 150 according to the embodiment of the present invention is applied as a floating electrode of a micro-shutter display device by applying a predetermined address signal.

The color filter 150 may be formed using, for example, soft molding, capillary force lithography, a polymer membrane patterning method using a rigidflex mold, a patterning method using a UV curable polymer, or the like. And then a predetermined metal film 152 is formed in the transparent film pattern 153 by performing a metal film deposition and planarization process or the like. However, the present invention is not limited to the method of forming the color filter 150.

In the color filter 150 according to the embodiment of the present invention having the above structure, the red color is selectively transmitted through the transmissive film pattern for red color in the red color area, and the red color is selectively transmitted through the transmissive film pattern for green color in the green color area. And the blue color is selectively transmitted through the transmissive film pattern for the blue color in the blue color area, thereby realizing the RGB color.

At this time, in the color filter 150 according to the embodiment of the present invention, not only the size of the transmissive film pattern, that is, the hole pattern, corresponding to the red, green and blue sub-pixels is made different, The thickness of the metal film was also varied. That is, a transparent film pattern for a green color is formed in a red color area and a transparent film pattern for a green color is formed in a green color area at least a thickness smaller than the thickness of a transparent film pattern for a red color, A blue color transmissive film pattern having a relatively small thickness is formed. However, the present invention is not limited thereto.

In this case, when the color filter 150 is formed on the glass substrate, it is preferable that the metal film 152 of the color filter 150 using the surface plasmon is covered with the insulating film having the same refractive index, (SiO ₂ or the like) 106 which is the same as the insulating layer This is because the surface plasmon is influenced by the dielectric constant of the metal and the peripheral insulating film, so that it is advantageous to form a two-component system.

Next, as shown in FIGS. 7B and 8B, a gate electrode 121 and a gate line 116 are formed on the array substrate 110 on which the insulating layer 106 is formed.

At this time, the gate electrode 121 and the gate line 116 are formed by selectively depositing a first conductive film on the entire surface of the array substrate 110 and then performing a photolithography process.

Here, the first conductive layer may be formed of one selected from the group consisting of aluminum (Al), aluminum alloy (Al alloy), tungsten (W), copper (Cu), chromium (Cr), molybdenum A low resistance opaque conductive material such as a molybdenum alloy (Mo alloy) can be used. The first conductive layer may have a multi-layer structure in which two or more low resistance conductive materials are stacked.

Next, as shown in FIG. 8C, a first insulating layer 115a, an amorphous silicon thin film, and an n + amorphous silicon thin film are deposited on the entire surface of the array substrate 110 on which the gate electrode 121 and the gate line 116 are formed Then, an active pattern 124 made of the amorphous silicon thin film is formed on the array substrate 110 by selective removal through a photolithography process.

At this time, an n + amorphous silicon thin film pattern 125 'formed of the n + amorphous silicon thin film and patterned substantially in the same manner as the active pattern 124 is formed on the active pattern 124.

Next, as shown in FIGS. 7C and 8D, a second conductive layer is deposited on the entire surface of the array substrate 110 on which the active pattern 124 is formed, and then selectively removed through a photolithography process, Drain electrodes 122 and 123 which are electrically connected to the source / drain regions of the active pattern 124. The source /

In addition, the data line 117, which is formed of the second conductive film through the photolithography process and crosses the gate line 116 and defines a pixel region, is formed.

In addition, a plurality of address electrodes 165 are formed in the pixel region through the photolithography process so as to be arranged in a zigzag pattern from the top to the bottom.

At this time, an ohmic contact layer 125n formed of the n + amorphous silicon thin film and patterned in the same shape as the source / drain electrodes 122 and 123 is formed on the active pattern 124.

At this time, the second conductive layer may be formed of a low-resistance opaque conductive material such as aluminum, aluminum alloy, tungsten, copper, chromium, molybdenum and molybdenum alloy to form a source electrode, a drain electrode and a data line. Also, the second conductive layer may be formed in a multi-layered structure in which two or more low resistance conductive materials are stacked.

The active pattern 124 and the source and drain electrodes 122 and 123, the data line 117 and the address electrode 165 according to the embodiment of the present invention are formed through two mask processes However, the present invention is not limited thereto, and a half-tone mask or a diffraction mask may be used to simultaneously form a single mask process.

7D and 8E, on the array substrate 110 on which the active pattern 124, the source / drain electrodes 122 and 123, the data lines 117 and the address electrodes 165 are formed, Thereby forming a plurality of micro-shutters 160 in the form of a conductive thin film.

The micro shutter 160 is opened or closed by an electrostatic force with the metal film 152 of the color filter 150 and the degree of opening of the micro shutter 160 is adjusted according to the electrostatic force to adjust the amount of light transmitted Thereby realizing an image.

The micro shutter 160 may be formed so that one side thereof is connected to the address electrode 165 and the other side of the micro shutter 160 has a concave shape with respect to the array substrate 110. The micro shutter 160 includes a semicircular In addition, it can have either a U shape or a semi-elliptical shape. The address electrode 165 fixes the micro shutter 160 and applies a signal to the micro shutter 160.

In addition, as described above, the plurality of micro shutters 160 are arranged in the pixel region from top to bottom in a state where one side is connected to the plurality of address electrodes 165. However, the present invention is not limited to the method of arranging the address electrode 165 and the micro shutter 160.

The micro shutter 160 may be formed of a material suitable for blocking light incident from a lower backlight and being opened and closed by an electrostatic force, and may be formed of a plurality of layers having different coefficients of expansion so as to be opened or closed . For example, the micro shutter 160 may be made of a conductive metal material such as aluminum, molybdenum, copper, or gold.

Although the amorphous silicon thin film transistor using the amorphous silicon thin film as the active pattern has been described as an example of the present invention, the present invention is not limited thereto, and the present invention can be applied to the case where the polycrystalline silicon thin film It is also applied to a thin film transistor.

In addition, although a structure for applying a signal to a micro shutter through a switching element such as the thin film transistor is described in the embodiment of the present invention, the present invention is not limited thereto.

While a great many are described in the foregoing description, it should be construed as an example of preferred embodiments rather than limiting the scope of the invention. Therefore, the invention should not be construed as limited to the embodiments described, but should be determined by equivalents to the appended claims and the claims.

1 is an exploded perspective view schematically showing a structure of a general liquid crystal display device.

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a color filter.

3 is a diagram for explaining a driving method of a micro-shutter display device according to the present invention;

FIGS. 4A and 4B are a plan view and a cross-sectional view schematically showing the structure of a color filter according to the present invention, which is manufactured using a surface plasmon phenomenon. FIG.

5 is a plan view schematically showing a part of a micro-shutter display device according to an embodiment of the present invention.

6 is a cross-sectional view schematically showing the structure of a micro-shutter display device according to an embodiment of the present invention.

7A to 7D are plan views sequentially showing manufacturing steps of the micro-shutter display device shown in FIG.

8A to 8E are sectional views sequentially showing manufacturing steps of the micro-shutter display device shown in Fig.

DESCRIPTION OF REFERENCE NUMERALS

110: array substrate 106: insulating layer

116: gate line 117: data line

118: pixel electrode 121: gate electrode

122: source electrode 123: drain electrode

150: Color filter 152: Metal film

153: Transmission film pattern 160: Micro shutter

165: address electrode

Claims (16)

Forming a color filter on a substrate to form a transparent film pattern having a predetermined period or less in a metal film and selectively transmitting light of a specific wavelength to realize color; Forming an insulating layer on the color filter with a material constituting the substrate; Forming a thin film transistor and a plurality of address electrodes on the substrate on which the insulating layer is formed; And And forming a plurality of micro shutters, which are formed in the form of a conductive thin film on the substrate on which the thin film transistors are formed, and which are opened or closed by an electrostatic force with the metal film of the color filter. The method of manufacturing a micro-shutter display device according to claim 1, wherein the metal film has a different thickness corresponding to each wavelength. The method of manufacturing a micro-shutter display device according to claim 1, wherein the address electrodes are arranged in a zigzag fashion from top to bottom in a pixel region. The method as claimed in claim 3, wherein the plurality of micro shutters are formed so as to be arranged vertically downward in the pixel region in a state where one side is connected to the plurality of address electrodes. A color filter provided on the substrate and having a transmissive film pattern having a predetermined period or less in a metal film to selectively transmit light of a specific wavelength to realize color; An insulating layer made of a material constituting the substrate on the color filter; A thin film transistor provided on the insulating layer and a plurality of address electrodes; And And a plurality of micro shutters having a conductive thin film shape on the substrate provided with the thin film transistor and being opened or closed by an electrostatic force with the metal film of the color filter. The method of claim 5, wherein the metal film of the color filter is applied as an addressing signal to serve as a floating electrode, Wherein the micro shutter controls the degree of opening of the micro-shutter in accordance with an electrostatic force with the metal film of the color filter to adjust the amount of light transmitted through the micro-shutter. The micro-shutter display device according to claim 5, further comprising an insulating film for insulating the metal film of the color filter from the micro-shutter. The micro-shutter display device according to claim 5, wherein the micro-shutter has one side connected to the address electrode and the other side having a concave shape with respect to the substrate. The micro-shutter display device according to claim 5, wherein the micro-shutter has a U-shape, a semicircular shape, or a semi-elliptical shape. 6. The micro-shutter display device according to claim 5, wherein the address electrodes are arranged in a zigzag form from top to bottom in a pixel region. 11. The micro-shutter display device according to claim 10, wherein the plurality of micro-shutters are arranged in the pixel region from top to bottom in a state where one side is connected to the plurality of address electrodes. The micro-shutter display device according to claim 5, wherein the micro shutter and the metal film are made of a conductive metal material such as aluminum, molybdenum, copper, or gold. The micro-shutter display device according to claim 5, wherein the metal film has a thickness corresponding to each wavelength. 14. The method according to claim 13, A metal film for the red color which is relatively thickest in the red color region, And a green color metal film having a thickness smaller than that of the metal film for red color in a green color area, And a metal film for the blue color which is thinnest relative to the blue color region. The micro-shutter display device according to claim 5, wherein the substrate is made of glass, plastic, or a transparent film. The method of manufacturing a micro-shutter display device according to claim 1, wherein the substrate is formed of glass, plastic, or a transparent film.

Images