KR101618832B1 - Semiconductor device - Google Patents

Abstract

The present invention is a semiconductor device of the at least one AlGaInO ₃ layers, at least one formed on the substrate and gallium oxide, gallium oxide substrate comprises an electrode formed on AlGaInO layer ₃ is provided.

Description

Semiconductor device

The present invention relates to a semiconductor device, and more particularly to a semiconductor device using a gallium oxide substrate.

Materials such as silicon (Si) and gallium arsenide (GaAs) have evolved from semiconductor devices for low power and low frequency applications to a wide range of applications. However, because these semiconductor materials have relatively low bandgaps (e.g. 1.12 eV for Si at room temperature and 1.42 eV for GaAs) and relatively small breakdown voltages, high power, high frequency applications There is a limit.

Due to these limitations, interest in high power, high temperature, high frequency applications and devices has been shifted to wide bandgap semiconductor materials. Such semiconductor materials include silicon carbide (e.g., 2.996 eV for alpha SiC at room temperature) and Group III nitride (e.g., 3.36 eV for GaN at room temperature). These materials have higher breakdown voltage and higher electron saturation than Si and GaAs.

Particularly, silicon carbide can be used as a light emitting diode (LED), a laser diode (LD), etc., in which a nitride semiconductor layer is laminated using a substrate. However, since the silicon carbide substrate has a large lattice constant to the nitride semiconductor layer and is conductive but low in transparency, there is a problem that a part of the wavelength of transmitted light is absorbed. In addition, the silicon carbide substrate has a problem of poor crystallinity and micropipe defects.

Many studies have been conducted to solve this problem, one of which is to use a gallium oxide substrate. Since the gallium oxide single crystal is colorless and transparent and has a bandgap of about 4.8 eV, it can be used as an optical material in an ultraviolet region, a light emitting element such as an LED or a LD, a semiconductor substrate for a light receiving element such as an ultraviolet sensor, Various applications such as a field effect transistor (FET) have been studied. Examples of semiconductor devices using such a gallium oxide substrate are disclosed in Korean Patent Laid-Open Nos. 10-2010-0055187 and Korean Patent Laid-Open No. 10-2014-0012584.

However, there is a problem that the gallium oxide substrate is peeled off from the material layer formed on the gallium oxide substrate, particularly, the nitride semiconductor layer. That is, the nitride semiconductor layer is grown in a mixed atmosphere of ammonia and hydrogen. Since the gallium oxide is easily etched in the hydrogen gas atmosphere, the surface of the gallium oxide substrate is partially unevenly etched by the hydrogen gas during the growth of the nitride semiconductor layer. Such uneven etching of the interface lowers the interfacial adhesion force and causes peeling of the gallium oxide substrate and the nitride semiconductor layer. Further, since the gallium oxide substrate and the nitride semiconductor layer have different thermal expansion coefficients, the interface between the gallium oxide substrate and the nitride semiconductor layer is peeled off due to stress due to difference in thermal expansion coefficient during cooling after the growth of the nitride semiconductor layer or in the heat treatment process.

The present invention provides a semiconductor device using a gallium oxide substrate.

The present invention provides a semiconductor device in which a gallium oxide substrate and a layer formed thereon are not peeled off.

The present invention provides a semiconductor device in which a light emitting diode, an FET, and the like are implemented on a gallium oxide substrate.

A semiconductor device according to one aspect of the present invention includes a gallium oxide substrate; At least one AlGaInO ₃ layer formed on the gallium oxide substrate; And at least one an electrode is formed on the layer ₃ AlGaInO.

And a buffer layer formed between the gallium oxide substrate and the at least one AlGaInO ₃ layer.

And a transparent electrode formed between the at least one AlGaInO ₃ layer and the upper electrode.

The AlGaInO ₃ layer includes a first AlGaInO ₃ layer and a second AlGaInO ₃ layer having different compositions.

Wherein 1 AlGaInO ₃ layer is _{Al x1 Ga (1-x1- y1} ) In y1 O 3 (0≤x1, y <0.75) is formed from said first layer is 2 AlGaInO ₃ Al _x2 Ga _{(1-x2- y2 )} In _{y 2} O ₃ (x ₂ ? X 1, _{y 2} ? Y 1).

Wherein the 2 AlGaInO _three layers has a small AlGaInO 1 wherein the energy band gap than the _third layer, the greater the charge mobility.

The electrode comprises a first and a second electrode formed with a predetermined distance apart on said AlGaInO ₃ layer.

The electrode comprises a source electrode and a drain electrode formed on a predetermined region on the AlGaInO layer ₃ and spaced apart from the gate electrode a gate electrode formed on a predetermined region on the AlGaInO ₃ layer, and a.

The electrode comprises a first electrode formed on the second electrode formed on the AlGaInO ₃ layer, the other surface of the gallium oxide substrate.

The gallium oxide substrate is a conductive substrate doped with a conductive impurity.

Semiconductor device according to embodiments of the present invention at least one AlGaInO ₃ layers, at least one formed on the gallium oxide substrate they comprises an electrode formed on AlGaInO ₃ layer. For example, a first AlGaInO ₃ layer and a second AlGaInO ₃ layer having different compositions are formed on a gallium oxide substrate, first and second electrodes are formed on the second AlGaInO ₃ layer so as to be spaced apart, or a second AlGaInO ₃ A gate electrode, a source electrode, and a drain electrode may be formed on the layer so as to be spaced apart from each other by a predetermined distance to realize a semiconductor device.

According to the present invention, it is possible to improve the speed of a semiconductor device by fabricating a semiconductor device using a AlGaInO ₃ layer having a wide energy band gap and excellent withstand voltage characteristics and lower electric resistance than SiC and GaN. In addition, when this is applied to a power semiconductor device, the loss ratio can be remarkably reduced. In addition, since a metal oxide having a ternary system or higher, that is, an oxide semiconductor, is formed on the gallium oxide substrate, a problem of peeling does not occur in the element in which the nitride semiconductor is formed.

1 is a cross-sectional view of a semiconductor device according to a first embodiment of the present invention;
2 is a cross-sectional view of a semiconductor device according to a second embodiment of the present invention;
3 is a cross-sectional view of a semiconductor device according to a third embodiment of the present invention;
4 is a cross-sectional view of a semiconductor device according to a fourth embodiment of the present invention;

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be understood, however, that the invention is not limited to the disclosed embodiments, but is capable of other various forms of implementation, and that these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know completely.

1 is a cross-sectional view of a semiconductor device according to a first embodiment of the present invention.

Referring to FIG. 1, a semiconductor device according to a first embodiment of the present invention includes a gallium oxide substrate 100, at least one AlGaInO ₃ layer 110 and 120 formed on one surface of the gallium oxide substrate 100, And first and second electrodes 130 and 140 formed on the AlGaInO ₃ layer 120 and spaced apart from each other by a predetermined distance. That is, the present invention includes at least one AlGaInO ₃ layer formed on a gallium oxide substrate 100, for example, a first AlGaInO ₃ layer 110 and a second AlGaInO ₃ layer 120. The AlGaInO ₃ layer is a gallium oxide-based compound semiconductor and has a high energy band gap, so it has excellent withstand voltage characteristics and has a lower electric resistance than SiC and GaN. Therefore, the loss ratio can be remarkably reduced when applied to power semiconductors. In addition, although the AlGaInO ₃ layer has a very large energy bandgap, it can be easily used to fabricate devices such as Schottky diodes and FETs because the electric conductivity can be easily controlled according to the composition ratio and doping. That is, the AlGaInO ₃ layer may have a wide energy band gap ranging from 3.0 eV to 8.8 eV depending on the composition, and the electric conductivity can be controlled by adjusting the energy band gap. For example, In ₂ O ₃ has an energy band gap of about 3.0 eV, Ga ₂ O ₃ has about 4.8 eV, and Al ₂ O ₃ has an energy band gap of about 8.8 eV. The AlGaInO ₃ layer has a band gap of 3.0 eV to an energy band gap of 8.8 eV.

The gallium oxide (Ga ₂ O ₃ ) substrate 100 may be made of β-Ga ₂ O ₃ single crystal. The gallium oxide substrate 100 may be a substrate having oxygen as a principal plane on one of the planes arranged in a hexagonal lattice, that is, (101), (-201), (301), and (3-10). In addition, the gallium oxide substrate 100 may be a substrate having any one of (010), (001), and (100) as its principal surface. Further, the gallium oxide substrate 100 may have an electric conductor property by doping with impurities, a semiconductor property, and an insulating property. For example, the gallium oxide substrate 100 may be doped with an n-type impurity, for example, silicon (Si) to have electrical conductivity, and may be doped with an insulating impurity to have an insulator property.

The first AlGaInO ₃ layer 110 is formed on the gallium oxide substrate 100 and may be formed by, for example, MOCVD (Metal Organic Chemical Vapor Deposition), MBE, or spray CVD. The first AlGaInO ₃ layer 110 may be formed by supplying an aluminum source gas, a gallium source gas, an indium source gas, and an oxygen source gas at a first composition ratio. Here, the aluminum source may include trimethyl aluminum (TMAl), and the gallium source may include trimethylgallium (TMGa) and triethylgallium (TEGa), and the indium source may be trimethyl Trimethylindium (TMIn), and triethylindium (TEIn), and the oxygen source may include oxygen and ozone. Such a first compositional ratio By the supply of the source gas of claim 1 AlGaInO ₃ layer 110 may be formed in the _{Al x1 Ga (1-x1-} y1) In y1 O 3 (0≤x1, y1 <0.75). Here, the first AlGaInO ₃ layer 110 has a y1 of 0.75 or more, that is, When the composition of indium is 0.75 or more, phase separation is performed, and thus defects may be generated. Therefore, it is preferable that the first AlGaInO ₃ layer 110 is formed such that y1 is less than 0.75. Meanwhile, the first AlGaInO ₃ layer 110 may be formed of a first conductive semiconductor layer. For example, the first AlGaInO ₃ layer 110 may be formed of a first conductive semiconductor layer doped with an n-type impurity. As the n-type impurity, at least one of silicon (Si) and tin (Sn) may be used. For example, SiH ₄ and SiH ₆ may be used as a silicon source gas. Of course, the first AlGaInO ₃ layer 110 may be formed of a second conductive type semiconductor layer doped with a p-type impurity. As the p-type impurity, at least one of magnesium (Mg) and zinc (Zn) may be used. For example, biscyclopentadienylmagnesium (Cp ₂ Mg) may be used as the magnesium oxide gas.

The second AlGaInO ₃ layer 120 is formed on the first AlGaInO ₃ layer 110 and may be formed by, for example, a MOCVD method. Here, the composition of the AlGaInO ₃ material determines the energy band gap size and the electric conductivity, that is, the charge mobility. As the energy band gap size decreases, the charge mobility increases. Therefore, In order to increase the charge mobility, the composition is adjusted so that the energy band gap becomes smaller than the other regions. That is, since the second AlGaInO ₃ layer 120 is used as a channel through which charge moves, the energy band gap is smaller than that of the first AlGaInO ₃ layer 110, thereby increasing the charge mobility. For this, the second AlGaInO ₃ layer 120 may be formed by supplying an aluminum source gas, a gallium source gas, an indium source gas, and an oxygen source gas at a second composition ratio. That is, the second AlGaInO ₃ layer 120 may have a composition different from that of the first AlGaInO ₃ layer 110. Such a second composition ratio Claim 2 AlGaInO ₃ layer 120 by the supply of the source gas may be formed by _{Al x2 Ga (1-x2- y2} ) In y2 O 3 (x2≤x1, y2≥y1). In other words, the 2 AlGaInO When forming the _third layer 120, first by adjusting the formation time signal is the source feed rate or supply rate of the gas of AlGaInO ₃ layer 110 of aluminum is low or forming the same than the first AlGaInO _3F 110 And indium may be formed to be equal to or more than the first AlGaInO ₃ layer 110. I.e. 2 AlGaInO _3, by decreasing the more the composition of indium increase the energy band gap is smaller and, as the composition of the aluminum increases since the energy band gap is larger the composition of indium than the 1 AlGaInO ₃ layer 110, a lot or a composition of Al The energy band gap of the layer 120 may be made smaller than the energy band gap of the first AlGaInO ₃ layer 110, thereby improving the electron mobility. At this time, since the first AlGaInO ₃ layer 110 has an electron mobility lower than that of the second AlGaInO ₃ layer 120, electrons can not be transferred to the first AlGaInO ₃ layer 110 and are confined in the second AlGaInO ₃ layer 120 It acts as a confine layer. Meanwhile, the second AlGaInO ₃ layer 120 may be formed of a semiconductor layer of a conductivity type different from that of the first AlGaInO ₃ layer 110. That is, when the first AlGaInO ₃ layer 110 is formed of a first conductive semiconductor layer doped with an n-type impurity, the second AlGaInO ₃ layer 120 may be formed of a second conductive type doped with a p- And may be formed of a semiconductor layer. If the first AlGaInO ₃ layer 110 is formed of a second conductive semiconductor layer doped with a p-type impurity, the second AlGaInO ₃ layer 120 may be formed of a first conductive material doped with n-type impurities such as Si or Sn Type semiconductor layer. By the way, claim 1 AlGaInO even when impurities are doped into the _third layer (110) of claim 1 AlGaInO _third layer 110 is also formed with a lower electron mobility than the 2 AlGaInO _third layer (120).

The first and second electrodes 130 and 140 are formed as Schottky electrodes, and are formed on the same plane and spaced apart from each other. The first and second electrodes 130 and 140 may be formed using a conductive material such as a metal material such as Ti, Cr, Au, Al, Ni, Ag, or an alloy thereof. . Also, the first and second electrodes 130 and 140 may be formed as a single layer or a multilayer.

Although not shown, a transparent electrode may be further formed between the second AlGaInO ₃ layer 120 and the first and second electrodes 130 and 140. The transparent electrode is UV-transparent and can act as a detecting element, i.e., a detector, of the semiconductor element accordingly. The transparent electrode may be formed of a transparent conductive material, for example, ITO, IZO, ZnO, RuOx, TiOx, IrOx, or the like so that UV light can be transmitted through the transparent electrode.

2 is a cross-sectional view of a semiconductor device according to a second embodiment of the present invention.

Referring to FIG. 2, a semiconductor device according to a second embodiment of the present invention includes a gallium oxide substrate 100, a buffer layer 150 formed on one surface of the gallium oxide substrate 100, The first AlGaInO ₃ layer 110 and the second AlGaInO ₃ layer 120 are formed and the first and second electrodes 140 and 150 formed on the second AlGaInO ₃ layer 120 and spaced apart from each other by a predetermined distance . Although not shown, a transparent electrode may be further formed between the second AlGaInO ₃ layer 120 and the first and second electrodes 130 and 140.

That is, in the semiconductor device according to the second embodiment of the present invention, the buffer layer 150 is further formed between the gallium oxide substrate 100 and the first AlGaInO ₃ layer 110, as compared with the first embodiment. This is because when the first AlGaInO ₃ layer 110 is formed on the gallium oxide substrate 100, if the composition of the first AlGaInO ₃ layer 110 rapidly changes around the gallium oxide substrate 100, The buffer layer 150 is formed so that the difference in lattice constant from the gallium oxide substrate 100 is not abruptly changed. At this time, the buffer layer 150 may be formed of AlGaInO ₃ material and may have a composition different from that of the first AlGaInO ₃ layer 110. For example, the buffer layer 150 may be formed of a composition of _{Al x3 Ga (1-x3- y3} ) In y3 O 3 (x3≤x1, y3≤y1).

As described above, in the semiconductor device according to the first and second embodiments of the present invention, the first AlGaInO ₃ layer 110 and the second AlGaInO ₃ layer 120 having different compositions are stacked on the gallium oxide substrate 100, . For example, the 1 AlGaInO ₃ layer 110 is _{Al x1 Ga (1-x1-} y1) In y1 O 3 can be formed by (0≤x1, y <0.75), a 2 AlGaInO ₃ layer 120 It may be formed by _{Al x2 Ga (1-x2-} y2) in y2 O 3 (x2≤x1, y2≥y1). In addition, the 2 AlGaInO _third layer 120 the electrons so used as a channel region to move claim 1 AlGaInO formed to be smaller energy band gap than the _third layer 110, and accordingly larger than the 1 AlGaInO _3F 110 It can have charge mobility. Thus, the speed of the semiconductor device can be improved by fabricating the semiconductor device using the AlGaInO ₃ material having a high energy band gap of about 4.9 eV and having a good withstand voltage characteristic and a lower electric resistance than SiC and GaN. In addition, when this is applied to a power semiconductor device, the loss ratio can be remarkably reduced. In addition, since a ternary or higher-order metal oxide, that is, an oxide semiconductor, is formed on the gallium oxide substrate 100, a problem of peeling does not occur in a device in which a nitride semiconductor is formed.

A method for manufacturing a semiconductor device according to the first embodiment of the present invention will now be described.

First, the gallium oxide substrate 100 is prepared, and at least one surface, preferably both surfaces, of the gallium oxide substrate 100 is wet-washed to remove organic and inorganic substances from the surface of the gallium oxide substrate 100. Further, the gallium oxide substrate 100 may be doped with a conductive impurity, for example, an n-type impurity such as silicon, to provide electrical conductivity. Of course, the gallium oxide substrate 100 is not doped with impurities, so that the gallium oxide substrate 100 can be made insulating.

Next, a first AlGaInO ₃ layer 110 is formed on one surface of the gallium oxide substrate 100. The first AlGaInO ₃ layer 110 can be formed by various methods, for example, MOCVD or sputtering. The first AlGaInO ₃ layer 110 is formed by supplying an aluminum source gas, a gallium source gas, an indium source gas, and an oxygen source gas at a first composition ratio to form Al _x Ga _{(1-x1- y1 )} In _y1 O ₃ , y < 0.75). Meanwhile, the first AlGaInO ₃ layer 110 may be formed of a first conductive semiconductor layer doped with an n-type impurity such as silicon. For this purpose, a silicon source gas including, for example, SiH ₄ and SiH ₆ may be further supplied. Of course, the first AlGaInO ₃ layer 110 may be formed of a second conductive semiconductor layer doped with a p-type impurity such as magnesium. For this purpose, a magnesium source gas containing, for example, biscyclopentadienylmagnesium (Cp ₂ Mg) may be further supplied. The first AlGaInO ₃ layer 110 may be formed at a temperature of, for example, 300 ° C. to 1500 ° C. and a pressure of 10 Torr to 760 Torr. For example, the first AlGaInO ₃ layer may be formed to a thickness of 0.01 μm to 10 μm.

Then, a second AlGaInO ₃ layer 120 is formed on the first AlGaInO ₃ layer 110. The second AlGaInO ₃ layer 120 may be formed continuously, i.e., insituly, in the same chamber as the first AlGaInO ₃ layer 110. Here, the second AlGaInO ₃ layer 120 of aluminum-source gas, a gallium source gas, an indium source gas and the oxygen source gas with a second composition by _{Al x2 Ga (1-x2-} y2) In y2 O 3 (x2≤ x1, y2 &gt; = y1). In other words, the 2 AlGaInO ₃ layer 120 is claim 1 AlGaInO ₃ layer 110 and may be formed of a different composition, the aluminum is low or forming the same than the 1 AlGaInO ₃ layer 110, and indium claim 1 AlGaInO _{The third} layer 110 may have a thickness greater than or equal to the thickness of the _third layer 110. Meanwhile, the second AlGaInO ₃ layer 120 may be formed of a semiconductor layer of a conductivity type different from that of the first AlGaInO ₃ layer 110. That is, when the first AlGaInO ₃ layer 110 is formed of a first conductive semiconductor layer doped with an n-type impurity, the second AlGaInO ₃ layer 120 may be formed of a second conductive type doped with a p- And may be formed of a semiconductor layer. When the first AlGaInO ₃ layer 110 is formed of a second conductive semiconductor layer doped with a p-type impurity, the second AlGaInO ₃ layer 120 may be formed of a first conductive type doped with n-type impurities such as Si Or may be formed of a semiconductor layer. The second AlGaInO ₃ layer 120 may be formed under the same conditions as the first AlGaInO ₃ layer 110, for example, at a temperature of 300 ° C. to 1500 ° C. and a pressure of 10 Torr to 760 Torr. For example, And may be formed to a thickness of 10 mu m.

Next, first and second electrodes 130 and 140 are formed in a predetermined region on the second AlGaInO ₃ layer 120, respectively. That is, the first and second electrodes 130 and 140 are spaced apart from each other on the same plane.

Meanwhile, the present invention can realize various semiconductor devices other than diodes by using a gallium oxide substrate. An example of such a semiconductor device will be described with reference to FIG.

3 is a cross-sectional view of a semiconductor device according to a third embodiment of the present invention, which is a sectional view of a field effect transistor.

3, the semiconductor device includes a gallium oxide substrate 100, a first AlGaInO ₃ layer 110 and a second AlGaInO ₃ layer 120 formed on the gallium oxide substrate 100, a second AlGaInO _{3 A} gate electrode 160 formed in a predetermined region on the _third layer 120 and a source electrode 170 and a drain electrode 180 formed on the second AlGaInO ₃ layer 160 spaced apart from the gate electrode 160 . A buffer layer (not shown) may be further formed between the gallium oxide substrate 100 and the first AlGaInO ₃ layer 110 and between the second AlGaInO ₃ layer 120 and the electrodes 160, A transparent electrode may be further formed. Here, the first AlGaInO ₃ layer 110 may be formed of Al _x Ga _{(1-x1- y1 )} In _y1 O ₃ (0? X1, y <0.75), and the second AlGaInO ₃ layer 120 may be formed of Al It may be formed in a _{x2 Ga (1-x2- y2)} in y2 O 3 (x2≤x1, y2≥y1). In addition, the second AlGaInO ₃ layer 120 may be doped with impurities to a predetermined region to a predetermined depth. For example, impurities can be doped to the underside of the source electrode 170 and the drain electrode 190 to a predetermined depth so as to at least partially overlap with the source electrode 170 and the drain electrode 190. In addition, the gate electrode 160 may include a gate insulating film 161 and a gate 162. The gate insulating layer 161 may be formed using an insulating material including silicon oxide, and may be formed of a single layer or a plurality of layers. The gate 162 may be formed using a conductive material, such as polysilicon, metal, or the like. The source electrode 170 and the drain electrode 180 may be formed of the same material as that of the gate 162, or may be formed of another material. In this manner, the ohmic electrode is formed by the gate electrode 160, the source electrode 170, and the drain electrode 180.

4 is a cross-sectional view of a semiconductor device according to a fourth embodiment of the present invention.

4, a semiconductor device according to a fourth embodiment of the present invention includes a gallium oxide substrate 100, a first AlGaInO ₃ layer 110 and a second AlGaInO ₃ layer 110 stacked on one surface of the gallium oxide substrate 100, _3F may include a second electrode 145 formed on the other surface of the first electrode 135 and the gallium oxide substrate 100 is formed at a predetermined region on the 120, the second AlGaInO _third layer 120. In addition, a buffer layer (not shown) may be further formed between the gallium oxide substrate 100 and the first AlGaInO ₃ layer 110, and a transparent layer may be formed between the second AlGaInO ₃ layer 120 and the first electrodes 1135 An electrode may be further formed. That is, the semiconductor device according to the fourth embodiment of the present invention may be formed such that the first and second electrodes 135 and 145 are vertically spaced apart from each other. At this time, the gallium oxide substrate 100 may be impregnated with a conductive impurity such as silicon (Si) to have electrical conductivity characteristics. In addition, the 1 AlGaInO ₃ layer 110 is _{Al x1 Ga (1-x1- y1} ) In y1 O 3 can be formed by (0≤x1, y <0.75), a 2 AlGaInO ₃ layer 120 is Al It may be formed in a _{x2 Ga (1-x2- y2)} in y2 O 3 (x2≤x1, y2≥y1). The first electrode 135 is the other surface of the second AlGaInO ₃ layer is formed in a predetermined area a second AlGaInO ₃ layer and supplies power to the unit 120, the second electrode 145 is a gallium oxide substrate 100 on the 120 And the first AlGaInO ₃ layer 110 is supplied with power. Meanwhile, in the fourth embodiment of the present invention, two electrodes may be formed on the second AlGaInO ₃ layer 120 apart from each other. That is, two electrodes may be formed on the second AlGaInO ₃ layer 120 so as to be spaced apart from each other, and one electrode may be formed on the back surface of the gallium oxide substrate 100.

Although the technical idea of the present invention has been specifically described according to the above embodiments, it should be noted that the above embodiments are for explanation purposes only and not for the purpose of limitation. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention.

100: gallium oxide substrate 110: first AlGaInO ₃ layer
120: second AlGaInO ₃ layer 130, 140: first and second electrodes
150: buffer layer

Claims (10)

A gallium oxide substrate;
The oxide formed on a substrate of gallium, the 1 ₃ AlGaInO semiconductor layer having _{Al x1 Ga (1-x1-} y1) In y1 O 3 (0≤x1, y1 <0.75) in the composition;
Wherein 1 AlGaInO ₃ is formed on the semiconductor layer, a semiconductor layer 2 AlGaInO ₃ having a composition of _{Al x2 Ga (1-x2-} y2) In y2 O 3 (x2≤x1, y2≥y1);
Wherein the source electrode 2 AlGaInO ₃ spaced apart from each other on the semiconductor layer and the drain electrode; And
A gate insulating film and a gate formed on the first semiconductor layer 2 AlGaInO ₃ between each other spaced the source electrode and the drain electrode, and include,
The second AlGaInO ₃ semiconductor layer provides a channel through which charges move between the source electrode and the drain electrode,
Wherein said ₃ 1 AlGaInO semiconductor layer is a confinement layer is put in the first semiconductor layer 2 AlGaInO ₃ to said charge,
Wherein the 2 AlGaInO ₃ semiconductor layer and the second semiconductor layer is 1 ₃ AlGaInO another semiconductor layer of the semiconductor element of the other conductivity type.
The method according to claim 1,
Semiconductor device further comprises a buffer layer formed between the gallium oxide substrate and the first semiconductor layer 1 AlGaInO _3.
delete delete delete The method according to claim 1,
Wherein the semiconductor layer is 2 AlGaInO ₃ wherein 1 ₃ AlGaInO semiconductor layer is smaller than the energy band gap, a large semiconductor device charge mobility.
delete delete delete The method according to claim 1,
Wherein the gallium oxide substrate is doped with an impurity.

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