KR101616470B1 - An apparatus of slicing an ingot - Google Patents

Abstract

According to an embodiment of the present invention, an ingot cutting device comprises: a work plate fixing an ingot and vertically moving the same; rollers configured to be able to rotate and arranged under the work plate; a wire wound by the rollers and configured to perform a reciprocating motion by rotation of the rollers; and a guide unit placed under the wire and configured to guide an ingot sliced by the wire. The guide unit includes a plurality of sub-guide units to independently support different areas of the sliced ingot. The present invention provides an ingot cutting device capable of reducing a warp deviation of sliced wafers.

Description

TECHNICAL FIELD [0001] The present invention relates to an ingot cutting apparatus,

An embodiment relates to an ingot cutting apparatus.

Generally, in the wafer manufacturing process, a silicon ingot is produced by extracting and purifying silicon (Si) from sand to produce a silicon raw material, injecting a desired impurity, preparing a sliced silicon ingot to a desired thickness, and a slicing process. In this slicing process, the wafer slicing process refers to slicing an ingot manufactured in an ingot manufacturing process into a plurality of thin plates, and a wire saw apparatus is widely used.

There may be a difference in the flatness quality of the sliced wafer due to factors such as the difference in cutting heat and the difference in degree of expansion of the ingot.

FIG. 7A shows the cutting profile for each position of the ingot in the horizontal direction, and FIG. 7B shows the cutting profile for each position of the ingot in the vertical direction.

Referring to FIG. 7A, it can be seen that a difference in warp of the wafer occurs at positions a, b, and c of the ingot I.

Referring to Fig. 7B, it can be seen that the warp difference of the wafer occurs at the cutting initial position P1 of the ingot I and the latter position P2 of the cut.

The embodiment provides an ingot cutting apparatus capable of reducing the warp deviation of sliced wafers depending on positions of the ingot in the horizontal direction and the vertical direction.

An ingot cutting apparatus according to an embodiment includes a work plate for fixing an ingot and moving it up and down; Rollers disposed below the work plate and rotating; A wire wound on the rollers and reciprocating by rotation of the rollers; And a guide portion disposed below the wire and guiding an ingot sliced by the wire, wherein the guide portion includes a plurality of sub-guide portions independently supporting different regions of the sliced ingot .

Wherein each of the plurality of sub-guide portions has a contact portion having a contact surface which contacts an outer circumferential surface of a corresponding one of different regions of the sliced ingot; And a lifting portion connected to the contacting portion and raising or lowering the contacting portion. The contact surface may be curved. The contact portion may be made of metal or teflon.

The distance in the horizontal direction from the center of the contact surface to the corresponding one of the sub guide portions may be the same as the distance in the horizontal direction from the center of the contact surface to the edge of the contact surface.

The distance in the horizontal direction from the center of the contact surface to the edge of the contact surface may be shorter than the distance in the horizontal direction from the center of the contact surface to a corresponding one of the sub guide portions.

Each of the plurality of sub-guide portions may further include a cover disposed on the contact surface.

Each of the plurality of sub-guide portions may further include a through hole provided in the contact surface.

Each of the plurality of sub-guide portions may be disposed on the contact surface, and may further include a sensing portion sensing a pressure applied by a corresponding one of the different regions of the sliced ingot.

The descending speed of the lifting unit can be controlled based on the pressure sensed by the sensing unit.

An ingot cutting apparatus according to another embodiment includes a work plate for fixing and moving the ingot up and down; A wire reciprocating under the work plate; And guiding portions positioned under the wire and guiding different regions of an ingot sliced by the wire, wherein each of the guiding portions includes at least one of a corresponding one of the different regions of the ingot, A contact portion having a contact surface that contacts an outer circumferential surface of the contact portion; A sensing unit disposed on the contact surface and sensing a pressure applied by a corresponding one of the different regions of the ingot; And a lifting portion for lifting the contact portion based on the pressure sensed by the sensing portion.

The contact surfaces of the contact portions of the guide portions come into contact with the outer circumferential surface of the ingot after the reference time point and the elevation portion descends with the ingot after the reference time point, As shown in FIG.

The lowering speed of the elevating unit is controlled such that the pressure sensed by the sensing unit becomes equal to the reference pressure, and the reference pressure may be the pressure sensed by the sensing unit at the reference time.

If the pressure sensed by the sensing unit is equal to the reference pressure, the descending speed of the elevating unit may be controlled to be equal to the descending speed of the ingot.

When the pressure sensed by the sensing unit is lower than the reference pressure, the lowering speed of the elevating unit may be controlled to decrease.

If the pressure sensed by the sensing unit is higher than the reference pressure, the lowering speed of the elevating unit may be controlled to increase.

The embodiment can reduce the warp deviation of the sliced wafer depending on the position of the ingot in the horizontal direction and the vertical direction.

Fig. 1 shows an ingot cutting apparatus according to an embodiment.
FIG. 2 is a perspective view of the guide unit shown in FIG. 1 according to an embodiment of the present invention.
Fig. 3A shows a plan view of the guide part shown in Fig.
Fig. 3B shows a sectional view in the AB direction of the guide portion shown in Fig. 3A.
4 is a cross-sectional view of a contact portion of the sub guide portion according to another embodiment.
5A is a plan view of the contact portions of the sub guide portions according to another embodiment.
Fig. 5B shows a cross-sectional view of the contact portion shown in Fig. 5A in the AB direction.
6 is a flow chart showing the operation of the control unit for feedback-controlling the rising speed of the lifting units.
7A shows the cutting profile of each ingot position in the horizontal direction.
Fig. 7B shows the cutting profile of each ingot in the vertical direction.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on "and " under" include both " directly "or" indirectly " do. In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

In the drawings, dimensions are exaggerated, omitted, or schematically illustrated for convenience and clarity of illustration. Also, the size of each component does not entirely reflect the actual size. The same reference numerals denote the same elements throughout the description of the drawings.

Fig. 1 shows an ingot cutting apparatus 100 according to an embodiment.

1, the ingot cutting apparatus 100 includes a frame 10, spindles 1, 2 and 3, rollers 101, 103 and 105, a wire 110, a beam 112, And includes a work plate 115, a table 120, a body 122, a slurry supply 130, a guide unit 140, and a control unit 150.

The frame 10 supports the body 122, and the spindles 1,2,3.

At least two of the spindles 1,2,3 are spaced from one another and can be connected to the frame 10, at least one of the spindles being rotatable.

For example, the three spindles 1, 2, 3 may be arranged in a triangular shape spaced apart from each other and may rotate.

Each of the spindles 1, 2 and 3 fixes the rollers 101, 102 and 130 and rotates the rollers 101, 102 and 130.

The wire 110 is wound on the outer circumferential surface of the rollers 101, 103 and 105 with a constant pitch and is reciprocated at a high speed between a pair of reels (not shown) as the spindles 1,2,3 rotate . As the rollers 101, 102, and 103 rotate, the wire is unwound from any one of the pair of reels 52 and 54, and the wire can be wound on any one of the pair of reels 52 and 54.

The slurry supply unit 130 supplies slurry to the wire 110 which reciprocates on the outer circumferential surface of the rollers 101, 102, and 103.

For example, the slurry supply unit 130 may have a piping structure extending from one end of the rollers 101, 102, and 103 to the other end thereof, and may include a plurality of nozzles (not shown) for spraying the slurry.

For example, the slurry supply unit 130 may be positioned on the rollers 101, 102, and 103 so as to be perpendicular to the traveling wire 110, and may supply the slurry to the surface of the wire 110 traveling at a high speed.

The body 122 may support the table 120, the spindle 2, and a guide unit 140.

The table 120 can be connected to the body 122 and can be raised or lowered.

For example, the body 122 may be provided with a transfer rail (not shown), and the table 120 may be raised or lowered along a transfer rail (not shown).

The work plate 115 is connected to the table 120 and mounted thereon.

The work plate 115 can be coupled to the lower surface of the table 120. For example, a groove may be provided on the lower surface of the table 120, and one end of the work plate 115 may be fitted into the groove of the table 120. The work plate 115 can be moved up and down by the table 120.

The beam 112 is connected to and fixed to the work plate 115, and the ingot I is attached by an adhesive or the like.

For example, one surface of the beam 112 may be fixed to the lower surface of the work plate 115, and the ingot I may be attached to the other surface of the beam 112. The beam 112 may be made of carbon or ceramics.

The slurry can be supplied to the surface of the wire 110 which travels reciprocally by the slurry feeder 130 and the ingot I attached to the beam 112 as the table 120 moves up and down is fed to the slurry- 110, and the transferred ingot I may be sliced by the wire 110. [

The guide portion 140 is disposed under the wire 110a and supports or guides the ingot cut by the wire 110a. At this time, the wire 110a runs between the first roller 1 and the third roller 3, and may be a part of the wire located at the highest position.

For example, the guide portion 140 may be disposed between the second roller 2 and the wire 110a, and between the first roller 1 and the third roller 3.

As shown in Fig. 7B, it is found that the ingot I is bent in the cutting direction, and the degree of warpage is weak in the cutting-off period P1, but the degree of warpage is increased in the latter stage P2.

The wafers sliced at the front end portion S1 and the rear end portion S3 of the ingot I in the later stage P2 are further widened in the horizontal direction than the wafers sliced at the central portion S2 of the ingot I .

The guide part 140 serves to support or guide the sliced ingot so that the sliced wafers are uniformly spaced in the horizontal direction in the cutting process of the ingot I.

The guide portion 140 supports or guides the ingot I after at least the first contact of the ingot I descending to the reciprocating wire 110 with the wire 110 at least for the first time.

As described above, the time at which the guide portion 140 contacts the ingot I may be a time point after the reference time elapses after the ingot I at least first contacts the wire 110.

For example, at the initial point (hereinafter, referred to as "reference point") at which the wire 110 enters the ingot I and is completely inserted into the ingot I, the guide portion 140 contacts the outer circumferential surface of the ingot I But the present invention is not limited thereto.

In another embodiment, the reference time may be a predetermined time after the first time when the wire 110 enters the ingot I and is completely inserted into the ingot I. In this case, the predetermined time may be set to a time until a time point at which wafers sliced in the horizontal direction do not occur after the initial point of time when they are completely inserted into the ingot (I).

The contact surfaces 232a, 234a and 236a of the contact portions 232, 234 and 236 of the guide portion 140 are in contact with the surface of the ingot I after the wire 110 enters the inside of the ingot I and is completely inserted into the ingot I There is no contact between the wire and the guide portion due to the contact with the outer circumferential surface, and therefore, the embodiment does not scatter the slurry caused by the wire.

Fig. 2 is a perspective view of the guide unit 140 shown in Fig. 1, Fig. 3a is a plan view of the guide unit 140 shown in Fig. 1, Fig. 3b is a cross- Sectional view of the portion 140 in the AB direction.

2 and 3A to 3B, the guide unit 140 may include a guide support unit 210 and a plurality of sub-guide units 220a, 220b, and 220c that are separated from each other.

The guide support part 210 can support the sub guide parts 220a, 220b, and 220c such that the sub guide parts 220a, 220b, and 220c are positioned below the wire 110a.

For example, one end of the guide support part 210 may be connected to one of the body 122 and the frame 10, and the sub guide parts 220a, 220b and 220c may be connected to the upper surface of the guide support part 210, It is possible to support or guide different regions of the outer circumferential surface of the ingot I to be formed.

For example, each of the sub guide portions 220a, 220b and 220c can support or guide any one of the different regions of the outer circumferential surface of the ingot I, and can independently and independently raise and lower.

In FIG. 2, the guide part 140 is divided into three parts, but the present invention is not limited thereto. In another embodiment, the guide part 140 may include two or more sub-guide parts.

Each of the sub guide portions 220a, 220b and 220c may include contact portions 232, 234 and 236, sensing portions 242, 244 and 246, and elevating portions 222, 224 and 226.

Each of the contact portions 232, 234, 236 of the sub guide portions 220a, 220b, 220c may include contact surfaces 232a, 234a, 236a that are in contact with different regions of the outer circumferential surface of the ingot I.

The contact surfaces 232a, 234a, 236a of each of the contact portions 232, 234, 236 may be concave curved surfaces.

For example, the contact surfaces 232a of the contact portions 232, 234, and 236 may be concave curved surfaces having the same curvature as each other, but the present invention is not limited thereto.

The contact surfaces 232a, 234a, and 236a of the contact portions 232, 234, and 236 may be curved surfaces that coincide with corresponding ones of different regions of the outer circumferential surface of the ingot I, respectively.

The distance d1 from the center 101 of the contact surfaces 232a, 234a and 236a to the edges 102 of the contact surfaces 232a, 234a and 236a of the contact portions 232, 234 and 236 is larger than the distance d1 from the center of the ingot I, But it is not limited to this thickness.

The distance from the center 101 of the contact surfaces 232a, 234a and 236a of the contact portions 232, 234 and 236 to the corresponding one of the sub guide portions 220a, 220b and 220c May be equal to the distance in the horizontal direction from the center 101 of the contact surfaces 232a, 234a, 236a to the edge 102 of the contact surface.

The material of the contacts 232, 234, and 236 may be metal or Teflon, but is not limited thereto.

The sub guide portions 220a, 220b and 220c may further include a cover 233 disposed on the contact surfaces 232a, 234a and 236a of the contact portions 232, 234 and 236.

The cover 233 may be made of an elastic material capable of absorbing impact to prevent damage due to collision with the ingot I and may be made of a material having a high frictional force such that the ingot I can be stably supported or fixed ≪ / RTI > For example, the cover 233 may be made of a resin material, for example, silicon, but is not limited thereto.

The cover 233 can be attached, coated, or fixed to the contact surfaces 232a, 234a, 236a through an adhesive member or the like.

The sub guide portions 220a, 220b and 220c may further include through holes h1, h2 and h3 provided on the contact surfaces 232a, 234a and 236a of the contact portions 232, 234 and 236, respectively.

The slurry flowing down from the wire 110a through the through holes h1, h2 and h3 provided in the contact surfaces 232a, 234a and 236a can be smoothly discharged.

For example, one side of the through holes (h1, h2, h3) may be opened to the contact surfaces 232a, 234a, 236a and the other side of the through holes h1, h2, h3 may be opened to the sub guide portions 220a, 220b, 220c And the side surfaces 232b, 234b, and 236b.

In order to smoothly discharge the slurry, the through holes h1, h2 and h3 may have a line-shaped through-hole structure and are inclined with respect to the lower surfaces 232c, 234c and 236c of the sub guide portions 220a, 220b and 220c Structure.

In another embodiment, one side of the through holes h1, h2 and h3 can be opened to the contact surfaces 232a, 234a and 236a and the other side of the through holes h1, h2 and h3 can be opened to the sub guide parts 220a and 220b , And 220c, respectively.

Since the contact portions 232, 234, and 236 do not contact the wire 110, grooves or pitches for guiding the wire 110 are not formed, thereby causing vibration and derailment of the wire 110 due to grooves or pitch. Can be suppressed.

The sensing portions 242, 244, and 246 are disposed on the contact surfaces 232a, 234a, and 236a of the contact portions 232, 234, and 236, and sense the applied pressure.

For example, the sensing portions 242, 244, 246 may be arranged to align with any corresponding one of the contact surfaces 232a, 234a, 236a of the contact portions 232, 234, 236, but are not limited thereto.

Each of the sensing portions 242,244 and 246 can sense the pressure applied to one of the contact surfaces 232a, 234a and 236a of the contact portions 232, 234 and 236 by the different regions of the ingot I, To the control unit 150. The control unit 150 outputs the sensing pressure to the control unit 150. [

The elevating portions 222, 224, and 226 are disposed between the guide supporting portion 210 and the contacting portions 232, 234, and 236 to raise or lower the contacting portions 232, 234, and 236.

Each of the lift portions 222, 224, and 226 can raise or lower any one of the contact portions 232, 234, and 236. The number of the lift portions 222, 224, 226 may be equal to the number of the contact portions 232, 234, 236, but is not limited thereto.

The ascending or descending of the elevating portions 222, 224, 226 can be controlled based on the sensing pressure of the sensing portions 242, 244, 246 and the descending speed of the work plate 115.

Each of the lift portions 222, 224 and 226 includes a shaft connected to a corresponding one of the contact portions 232, 234 and 236, and a motor for up- or down- But is not limited thereto.

For example, by raising or lowering the shaft by the motor, the contact portions 232, 234, and 236 can be raised or lowered.

The contact portions 232, 234, and 236 are detachable from the lift portions 222, 224, and 226. This is for easy replacement of worn contacts.

The control unit 150 can control the descending speed of the elevating units 222, 224, and 226 based on the descending speed of the work plate 115 and the sensing pressure provided from the sensing units 242, 244, and 246.

For example, the control unit 150 may control a corresponding one of the descent speeds of the ascending / descending units 222, 224, 226 such that each of the current sensing pressures sensed by the sensing units 242, 244, 246 becomes equal to the reference pressure

The reference pressure may be the pressure applied by the sliced wafers to the sensing portions 242,244, 246 when no horizontal deflection of the sliced wafers occurs. For example, the reference pressure may be the pressure applied to the sensing portions 242, 244, 246 by the ingot I at the reference time.

6 is a flowchart showing the operation of the control unit 150 for feedback-controlling the ascending speeds of the ascending / descending portions 222, 224, and 226. As shown in FIG.

6, the controller 150 calculates the difference ΔP = Ps-Pref between the sensing pressure Ps and the reference pressure Pref provided from the sensing units 242, 244, and 246, respectively (S110).

For example, the control unit 150 may calculate the difference DELTA P1 between the first sensing pressure Ps1 and the reference pressure Pref provided from the first sensing unit 242, and the second sensing unit 244, P2 between the second sensing pressure Ps2 provided from the third sensing portion 246 and the reference pressure Pref provided from the third sensing portion 246 and the reference pressure Pref, Pref) can be calculated.

For example, the difference DELTA P may be a difference between the sensing pressure Ps per unit time and the reference pressure Pref.

Next, the controller 150 determines whether the difference ΔP between the sensing pressure Ps and the reference pressure Pref is zero (S120). The fact that the difference ΔP between the sensing pressure Ps and the reference pressure Pref is zero can mean that no widening in the horizontal direction of the currently sliced wafers occurs.

If the difference ΔP between the sensing pressure Ps and the reference pressure Pref is zero, the control unit 150 maintains the descending speed of the ascending / descending unit at the first reference speed (S130).

For example, when the first difference ΔP1 is zero, the controller 150 can maintain the falling speed of the first lift portion 222 at the first reference speed.

For example, the first reference speed may be the same as the descending speed of the ingot I. This is because, even if the guide portion 140 supports or guides the ingot I while descending at the same speed as the descending speed of the ingot I, no widening in the horizontal direction of the currently sliced wafers occurs.

If the difference ΔP between the sensing pressure Ps and the reference pressure Pref is not zero, the control unit 150 determines the difference ΔP between the sensing pressure Ps and the reference pressure Pref, Is less than zero (S140).

If the difference ΔP between the sensing pressure Ps and the reference pressure Pref is smaller than zero, the control unit 150 decreases the descending speed of the ascending / descending unit S150.

For example, when the first difference [Delta] P1 is smaller than zero, the controller 150 may decrease the descending speed of the first elevating part 222. [ The fact that the present sensing pressure Ps is lower than the reference pressure Pref means that widening of the sliced wafers in the horizontal direction is occurring and therefore the control unit 150 reduces the lowering speed of the lift unit, It is possible to suppress the spreading in the horizontal direction.

If the difference DELTA P between the sensing pressure Ps and the reference pressure Pref is larger than zero, the control unit 150 increases the descending speed of the lifting unit (S160).

For example, when the first difference ΔP1 is greater than zero, the controller 150 may increase the descending speed of the first lifting unit 222. Since the current sensing pressure Ps is larger than the reference pressure Pref, the controller 150 can increase the descending speed of the ascending / descending section to adjust the sensing pressure Ps to be equal to the reference pressure Pref.

As the lowering speed of the lift portions 222, 224, 226 is individually feedback controlled by the controller 150, the embodiment can prevent the wafers sliced in the horizontal direction from being widened during the cutting process of the ingot I.

4 shows a cross-sectional view of a contact portion 232-1 of the sub guide portion 220a-1 according to another embodiment. 4 shows only one sub guide portion 220a-1, but the remaining sub guide portions may have the same structure as the sub guide portion 220a-1 of FIG.

The area of the contact surface 232a-1 of the contact portion 232-1 of the subguide 220a-1 shown in Fig. 4 is the contact surface 232a-1 of the contact portion 232 of the subguide portion 220a shown in Fig. ). ≪ / RTI >

For example, the distance d3 in the horizontal direction from the center 101a of the contact surface 232a-1 of the contact portion 232-1 to the edge 102a of the contact surface 232a- 1 may be shorter than the distance d2 in the horizontal direction from the center 101a of the contact surface 232a-1 of the sub guide portions 220a-1 to the corresponding one of the side surfaces 232b-1 of the sub guide portions 220a-1.

5A is a plan view of the contact portions 232-2, 234-2, and 236-2 of the sub guide portions according to another embodiment, and FIG. 5B is a sectional view along the AB direction of the contact portion 232-2 shown in FIG. .

5A and 5B, the areas of the contact surfaces 232a-2, 234a-2, 236a-2 of the contact portions 232-2, 234-2, 236-2 are smaller than those of the embodiments of Figs. Can be smaller.

The width D of the contact surfaces 232a-2, 234a-2, 236a-2 of the contact portions 232-2, 234-2, and 236-2 may be sufficient for arranging the sensing portions 242, 244, .

As described above, the embodiment (100) includes the sub guide portions independently supporting the different regions of the ingot, and measures the pressure applied by the sliced wafers in the ingot cutting process in real time and reflects the measured result Thus, it is possible to reduce the quality deviation of the sliced wafers according to the position of the ingot in the horizontal direction and the vertical direction.

That is, the embodiment can reduce the warp deviation of the sliced wafers depending on the position of the ingot in the horizontal direction and the vertical direction.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

1,2,3: Spindle, 10: Frame
101, 103, 105: roller 110: wire
112: beam 115: work plate
120: Table 130: Slurry supply part
140: guide part 150: control part.

Claims (16)

A work plate for fixing and moving the ingot up and down;
Rollers disposed below the work plate and rotating;
A wire wound on the rollers and reciprocating by rotation of the rollers; And
And a guiding portion located under the wire and guiding the ingot sliced by the wire,
Wherein the guide portion includes a plurality of sub-guide portions independently supporting different regions of the sliced ingot. The apparatus according to claim 1, wherein each of the plurality of sub-
A contact portion having a contact surface that contacts an outer circumferential surface of a corresponding one of the different regions of the sliced ingot; And
And an elevating portion connected to the abutting portion to raise or lower the abutting portion. 3. The method of claim 2,
Wherein the contact surface is a curved surface. 3. The method of claim 2,
Wherein the contacting portion is made of metal or teflon. 3. The method of claim 2,
Wherein a distance in the horizontal direction from a center of the contact surface to a corresponding one of the sub guide portions is equal to a distance in the horizontal direction from a center of the contact surface to an edge of the contact surface. 3. The method of claim 2,
Wherein the distance in the horizontal direction from the center of the contact surface to the edge of the contact surface is smaller than the distance in the horizontal direction from the center of the contact surface to a corresponding one of the sub guide portions. 3. The apparatus according to claim 2, wherein each of the plurality of sub-
And a cover disposed on the contact surface. 3. The apparatus according to claim 2, wherein each of the plurality of sub-
And a through hole provided in the contact surface. 3. The apparatus according to claim 2, wherein each of the plurality of sub-
Further comprising a sensing portion disposed on the contact surface and sensing a pressure applied by a corresponding one of the different regions of the sliced ingot. 10. The method of claim 9,
And the descending speed of the elevating portion is controlled based on the pressure sensed by the sensing portion. A work plate for fixing and moving the ingot up and down;
A wire reciprocating under the work plate; And
And guiding portions positioned under the wire and guiding different regions of an ingot sliced by the wire,
Each of the guide portions includes:
A contact portion having a contact surface that contacts an outer circumferential surface of a corresponding one of the different regions of the ingot;
A sensing unit disposed on the contact surface and sensing a pressure applied by a corresponding one of the different regions of the ingot; And
And an elevating portion for elevating and lowering the contact portion based on the pressure sensed by the sensing portion. 12. The method of claim 11,
The contact surfaces of the contact portions of the guide portions come into contact with the outer circumferential surface of the ingot after the reference time point and the elevation portion descends with the ingot after the reference time point, The ingot cutting device being an initial point inserted into the ingot cutting device. 13. The method of claim 12,
Wherein the descending speed of the elevating unit is controlled so that the pressure sensed by the sensing unit becomes equal to the reference pressure, and the reference pressure is the pressure sensed by the sensing unit at the reference time. 14. The method of claim 13,
Wherein the descending speed of the elevating portion is controlled to be equal to the descending speed of the ingot if the pressure sensed by the sensing portion is equal to the reference pressure. 14. The method of claim 13,
Wherein the descending speed of the elevating unit is controlled to decrease when the pressure sensed by the sensing unit is lower than the reference pressure. 14. The method of claim 13,
And the descending speed of the elevating unit is controlled to increase when the pressure sensed by the sensing unit is higher than the reference pressure.

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