CN111633854B - Cutting method of monocrystalline silicon wafer for reducing TTV - Google Patents
Cutting method of monocrystalline silicon wafer for reducing TTV Download PDFInfo
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- CN111633854B CN111633854B CN202010505539.8A CN202010505539A CN111633854B CN 111633854 B CN111633854 B CN 111633854B CN 202010505539 A CN202010505539 A CN 202010505539A CN 111633854 B CN111633854 B CN 111633854B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
- B28D5/0088—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being angularly adjustable
Abstract
The invention provides a clamping device and a cutting method for a monocrystalline silicon wafer for reducing TTV (time to live) and the clamping device comprises a first filler strip, a second filler strip and a bonding plate which are sequentially connected; the first pad strip is fixed and arranged in parallel to the routing direction of the diamond wire cutting wire net; the second cushion strip is obliquely arranged; one end of the second cushion strip is fixed on the first cushion strip, and the other end of the second cushion strip is far away from the first cushion strip to form an installation space; an adjusting gasket is arranged in the mounting space; one side of the adjusting gasket is fixed on the first cushion strip, and the other side of the adjusting gasket is fixed on the second cushion strip; the bonding plate is parallel to the second gasket; and a silicon ingot is fixed on the side surface of the bonding plate back to the second filler strip. In the cutting method, the contact mode between the silicon ingot and the cutting wire net is adjusted from surface contact to point contact, so that the slipping phenomenon during the cutting of the diamond wire is avoided; when the forward routing is set, the effective control of the TTV is realized by the corresponding relation between the diamond wire feed direction of the first-step routing and the inclination direction of the silicon ingot.
Description
Technical Field
The invention belongs to the field of silicon wafer cutting, and particularly relates to a cutting method of a monocrystalline silicon wafer for reducing TTV.
Background
The gold steel wire is a mainstream cutting tool of monocrystalline silicon wafers by quickly replacing the traditional cutting mode, and the demand of the gold steel wire is continuously increased along with the increase of the market proportion of the monocrystalline silicon. Up to now, gold steel wire has been widely used for slicing single crystal silicon worldwide. With the popularization of thinning, the difficulty of cutting mainly lies in the control of TTV, and a silicon ingot clamping device in the prior art comprises a clamping guide rail gasket, a metal filler strip and a plastic bonding plate which are sequentially connected, wherein the clamping guide rail gasket is arranged on a workbench through an air cylinder clamping device. Along with the increase of service time, because silicon ingot cutting feed face is complete with the contact of cutting wire net, the hardness of silicon ingot is big, press from both sides tight guide rail gasket, the metal filler strip appears warping and wearing and tearing, because the wearing and tearing position that presss from both sides tight guide rail and metal filler strip can't accurately be judged, consequently, there is the inclination of different states, for example the left side of silicon ingot touches the wire net earlier or the right side of silicon ingot touches the wire net earlier, can produce the inclination of different size and direction between silicon ingot and the cutting wire net respectively, consequently, can have the change of inlet wire direction in the cutting process, finally lead to the thickness of monocrystalline silicon piece uneven, can't effective control TTV.
Disclosure of Invention
The invention aims to provide a clamping device and a cutting method for reducing TTV of a monocrystalline silicon wafer, wherein the device is provided with an adjusting gasket, so that the problem that the TTV is difficult to control due to inconsistent abrasion of each part of the clamping device is avoided; in the cutting method, the contact mode between the silicon ingot and the cutting wire net is adjusted from surface contact to point contact, so that the slipping phenomenon when the metal steel wire is cut is avoided; when the forward routing is set, the corresponding relation between the cutting feed direction of the gold steel wire of the first-step routing and the inclination direction of the silicon ingot is avoided, the cutting feed thickness caused by accidental factors of equipment tool abrasion and mismatching of the feeding direction is avoided, and effective control over TTV is achieved. In order to achieve the purpose, the invention adopts the following technical scheme:
a clamping device applied to a single crystal silicon wafer for reducing TTV comprises: the first filler strip, the second filler strip and the bonding plate are connected in sequence;
the first backing strip is fixed and arranged in parallel to the routing direction of the gold steel wire cutting wire net;
the second cushion strip is obliquely arranged; one end of the second cushion strip is fixed on the first cushion strip, and the other end of the second cushion strip is far away from the first cushion strip to form an installation space; an adjusting gasket is arranged in the mounting space; one side of the adjusting gasket is fixed on the first cushion strip, and the other side of the adjusting gasket is fixed on the second cushion strip;
the bonding plate is parallel to the second filler strip; and a silicon ingot is fixed on the side surface of the bonding plate back to the second filler strip.
Preferably, the second backing strip is a metal backing strip.
Preferably, the adhesive sheet is a plastic adhesive sheet.
Preferably, the thickness of the adjusting gasket is 0.8 mm-1.2 mm.
The invention also provides a cutting method applied to the monocrystalline silicon wafer for reducing TTV, and the clamping device based on the monocrystalline silicon wafer for reducing TTV comprises the following steps:
(1) arranging a wire net: arranging a gold steel wire cutting wire net between the pay-off shaft and the take-up shaft;
(2) arranging a clamping device of the TTV-reduced monocrystalline silicon wafer: fixing the first gasket strip on a workbench above a cutting wire net, and enabling the adjusting gasket to be positioned at the end point of the first-step wiring direction vector; the first step routing direction is the same as the forward routing direction;
(3) setting the running parameters of the first step of wiring direction: in the cutting process, the operating speed of the workpiece driven by the workbench is 1-1.4 mm/min; the linear speed of the gold steel wire is 8-12 m/s; the wire inlet distance of the gold steel wire is 1000 m;
(4) cutting a silicon ingot: firstly, cutting the silicon ingot by adopting a forward wiring mode, and then continuously cutting the silicon ingot by adopting a reverse wiring mode until the cutting is finished.
Preferably, the minimum vertical distance between the gold steel wire and the silicon ingot before slicing is 1 mm.
Preferably, the height of the edge of the gold steel wire is 3 um-5 um.
Preferably, the wire diameter of the gold steel wire is 53 mm-57 mm.
Compared with the prior art, the invention has the advantages that:
(1) in the device, the adjusting gasket is arranged, so that the problem that TTV is difficult to control due to inconsistent abrasion of all parts of the clamping device is avoided;
(2) in the cutting method, the contact mode between the silicon ingot and the cutting wire net is adjusted from surface contact to point contact, the contact surface between the silicon ingot and the cutting wire net is small, and the gold steel wire can easily cut into the silicon ingot according to the pressure principle, so that the slipping phenomenon when the gold steel wire is cut is avoided; when the forward wiring is set, the corresponding relation between the cutting direction of the golden steel wire of the first-step wiring and the inclination direction of the silicon ingot is avoided, the cutting thickness caused by accidental factors of equipment tool abrasion and mismatching of the wire-incoming direction is avoided, and effective control over TTV is achieved.
Drawings
FIG. 1 is a front view of a clamping apparatus for a single crystal silicon wafer with reduced TTV according to an embodiment of the present invention;
FIG. 2 is a schematic view illustrating the installation of a clamping device for a TTV-reduced monocrystalline silicon wafer in a cutting method for a TTV-reduced monocrystalline silicon wafer according to an embodiment of the present invention;
FIG. 3 is a diagram illustrating a relationship between the first step routing direction and the position of the silicon ingot and the scribe line network in FIG. 1;
FIG. 4 is a diagram illustrating the relationship between the first step routing direction and the silicon ingot and scribe line nets in another embodiment.
The method comprises the following steps of 1-first cushion strip, 2-second cushion strip, 3-bonding plate, 4-adjusting gasket, 5-silicon ingot, 6-cutting wire net, 7-paying off shaft and 8-taking up shaft.
Detailed Description
The present invention will now be described in more detail with reference to the accompanying schematic drawings, in which preferred embodiments of the invention are shown, it being understood that one skilled in the art may modify the invention herein described while still achieving the advantageous effects of the invention. Accordingly, the following description should be construed as broadly as possible to those skilled in the art and not as limiting the invention.
As shown in fig. 1, a clamping apparatus for a single crystal silicon wafer for lowering TTV comprises: the first filler strip 1, the second filler strip 2 and the bonding plate 3 are connected in sequence; an adjusting shim 4 is arranged between the first filler strip 1 and the second filler strip 2.
The first filler strip 1 is fixed and arranged in parallel to the routing direction of the gold-steel wire cutting wire mesh 6. The routing manner includes a forward routing as shown in fig. 1 and a reverse routing (loop direction) opposite to that in fig. 1.
The second filler strip 2 is obliquely arranged; one end of the second filler strip 2 is fixed on the first filler strip 1, and the other end is far away from the first filler strip 1 to form an installation space; an adjusting gasket 4 is arranged in the installation space; one side of the adjusting shim 4 is fixed on the first filler strip 1, and the other side is fixed on the second filler strip 2.
The bonding plate 3 is parallel to the second filler strip; a silicon ingot 5 is fixed on the side of the bonding plate 3 back to the second filler strip 2.
In the present embodiment, the first gasket 1 is a clamping rail gasket; the second filler strip 2 is a metal filler strip; the adhesive plate 3 is a plastic adhesive plate 3.
In the present embodiment, the thickness of the adjusting pad 4 is 0.8mm to 1.2mm, such as 1 mm.
As shown in fig. 2, the embodiment further proposes a cutting method applied to a TTV-reduced monocrystalline silicon wafer, based on a clamping device applied to a TTV-reduced monocrystalline silicon wafer, comprising the following steps:
(1) arranging a wire net: a gold steel wire cutting wire net 6 is arranged between the pay-off shaft 7 and the take-up shaft 8;
(2) arranging a clamping device of the single crystal silicon wafer for reducing TTV: fixing the first filler strip 1 on a workbench above a cutting wire net 6, and enabling the adjusting gasket 4 to be positioned at the end point of the vector of the first-step wiring direction, wherein the first-step wiring direction is the same as the forward wiring direction; that is, the first step incoming line direction forms an obtuse angle with the feed side surface 51 of the silicon ingot 5; the first step of routing refers to routing at the beginning of cutting, as shown in fig. 2, the routing mode of the cut wire mesh 6 is the forward routing. The minimum vertical distance between the wire and the ingot 5 before slicing is 1 mm.
In this step, if the pitch angle is opposite to that of the invention, as shown in fig. 4, the first step routing direction forms an acute angle with the feed side surface 51 of the silicon ingot 1, the space between the silicon ingot 5 and the cutting wire net 6 is small, and an eddy current is easily formed, which causes the gold steel wire to shake; the required inclination direction of the invention is that the routing direction of the first step forms an obtuse angle with the feed side surface 51 of the silicon ingot 5, as shown in fig. 3, the space between the cutting liquid sprayed on the cutting wire mesh 6 and the silicon ingot 5 is larger, most of the cutting liquid flows down from the cutting wire mesh 6, and a small part of the cutting liquid is attached to the gold steel wire to cut the silicon ingot 5, so that a vortex cannot be formed, the gold steel wire is prevented from shaking greatly, and the generation of a feed position TTV is effectively controlled.
In this step, an angle is formed between the silicon ingot 5 and the gold wire by a person, and the difference in angle due to the difference in wear of the clamping device is avoided.
In this step, the direction of the silicon ingot 5 is fixed, and the direction of the inclination angle of the silicon ingot 5 and the direction of the inclination angle of the cutting wire net 6 are ensured to be consistent.
(3) Setting operation parameters of the first step of wiring direction: in the cutting process, the operating speed of the workpiece driven by the workbench is 1-1.4 mm/min; the linear speed of the gold steel wire is 8-12 m/s; the wire inlet distance of the gold steel wire is 1000 m; the running speed of the work piece driven by the workbench can be set to be 1.2 mm/min, and the linear speed of the gold steel wire can be set to be 10 m/s. The wire inlet distance refers to the distance of the paying-off shaft for forward wiring according to the process direction. Table 1 shows the setting of the operating parameters in the first routing direction.
TABLE 1
| Initial coordinate (mm) | Entrance wire mesh coordinate of knife entrance face (mm) | Cutting distance (mm) | Platform speed (mm/min) | Required time(s) |
| 1 | -1 | 2 | 1.2 | 100 |
| Acceleration (m/s 2) | Speed (m/s) | 0-10 acceleration time(s) | 0-10 acceleration stroke (m) | Theoretical uniform distance (m) |
| 8 | 10 | 1.25 | 6.25 | 987.5 |
In the process, by fixing the wiring direction and calculating through the upper table, the theoretical uniform-speed distance 987.5m is ensured to be smaller than the wire inlet distance 1000m, so that the wire speed is always kept unchanged and the wiring direction is always kept unchanged in the process from the time when the silicon ingot 5 is just fed to the time when the whole bottom surface of the silicon ingot 5 is completely cut into the cutting wire net 6.
(4) Cutting the silicon ingot 5: the guide wheel rotates to drive the metal wire cutting wire net to horizontally move between the pay-off shaft and the take-up shaft, and the silicon ingot in the descending process is cut back and forth according to the mode that more incoming wires are fed and less return wires are fed. Firstly, the silicon ingot 5 is cut by adopting a forward wiring mode, and then the silicon ingot 5 is continuously cut by adopting a reverse wiring (loop) mode until the cutting is finished. The continuous forward and reverse routing is maintained in the cutting process, and the cutting process comprises a plurality of steps, such as a first step of feeding wire 1000m, a return wire 995 m, a second step of feeding wire 800 m and a return wire 795 m. Wherein the wire diameter of the gold steel wire is 53 mm-57 mm. ,
in summary, the clamping device and the cutting method for reducing TTV of the single crystal silicon wafer of the present embodiment have the following advantages:
(1) in the device, the adjusting gasket 4 is arranged, so that the situation that TTV is difficult to control due to the fact that the abrasion positions and directions of all parts of the clamping device are inconsistent is avoided.
(2) The contact mode between the silicon ingot 5 and the cutting wire net 6 is adjusted from surface contact to point contact, the contact surface between the silicon ingot 5 and the cutting wire net 6 is small, and the gold steel wire can be easily cut into the silicon ingot 5 according to the pressure principle, so that the slipping phenomenon when the gold steel wire is cut is avoided.
(3) When the forward routing is set, the corresponding relation between the feeding direction of the gold steel wire of the first-step routing and the inclination direction of the silicon ingot 5 is avoided, the feeding thickness caused by accidental factors of equipment tool abrasion and mismatching of the feeding direction is avoided, and effective control on TTV is realized.
(4) The contact mode between the silicon ingot 5 and the cutting wire net 6 is adjusted from surface contact to point contact, the silicon ingot 5 does not slip or have deviation when contacting the cutting wire net 6, and the clamping device has better compatibility with cooling liquid.
(5) Whether the cutting is finished or not only needs to observe one side, but also does not need to judge on two sides, so that the operation of staff is facilitated. That is, it is sufficient to observe whether or not the side without the spacer 4 is cut through the bonded plate, and the top end of the silicon ingot with the spacer 4 is positioned lower than the side without the spacer 4, and is cut through preferentially.
(6) The quality and the sheet forming rate of the monocrystalline silicon piece are improved.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention in any way. It will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (7)
1. A cutting method applied to a monocrystalline silicon slice for reducing TTV is based on a clamping device applied to a silicon ingot for reducing TTV, and the device comprises the following steps: the first filler strip, the second filler strip and the bonding plate are connected in sequence;
the first backing strip is fixed and arranged in parallel to the routing direction of the gold steel wire cutting wire net;
the second cushion strip is obliquely arranged; one end of the second cushion strip is fixed on the first cushion strip, and the other end of the second cushion strip is far away from the first cushion strip to form an installation space; an adjusting gasket is arranged in the mounting space; one side of the adjusting gasket is fixed on the first cushion strip, and the other side of the adjusting gasket is fixed on the second cushion strip;
the bonding plate is parallel to the second filler strip; a silicon ingot is fixed on the side surface of the bonding plate back to the second filler strip; the method is characterized by comprising the following steps:
(1) arranging a wire net: arranging a gold steel wire cutting wire net between the pay-off shaft and the take-up shaft;
(2) arranging a clamping device of the TTV-reduced monocrystalline silicon wafer: fixing the first gasket strip on a workbench above a cutting wire net, and enabling the adjusting gasket to be positioned at the end point of the first-step wiring direction vector; the first step routing direction is the same as the forward routing direction; namely, the line-feeding direction of the first step forms an obtuse angle with the feed side surface (51) of the silicon ingot (5); the first-step routing refers to routing at the beginning of cutting, the space between the cutting line net and the silicon ingot sprayed by cutting liquid is large, most of the cutting liquid flows down from the cutting line net, and a small part of the cutting liquid is attached to the gold steel wire to cut the silicon ingot, so that the gold steel wire is prevented from shaking greatly, and the generation of a tool feeding position TTV is controlled;
(3) setting the running parameters of the first step of wiring direction: in the cutting process, the operating speed of the workpiece driven by the workbench is 1-1.4 mm/min; the linear speed of the gold steel wire is 8-12 m/s; the gold isThe wire inlet distance of the steel wire is 1000 m; the operation parameters of the first step of wiring direction are set as follows: the operating speed of the work piece driven by the workbench is 1.2 mm/min; the linear speed of the gold steel wire is set to be 10 m/s; the initial coordinate is 1 mm; the coordinate of the knife entering surface and entering the wire mesh is-1 mm; cutting distance is 2 mm; the time is 100 s; acceleration 8m/s2(ii) a Acceleration time 1.25 s; the acceleration stroke is 6.25 m;
in the process, by fixing the routing direction and calculating, the theoretical uniform-speed distance 987.5m is ensured to be smaller than the wire inlet distance 1000m, so that the wire speed and the routing direction are always kept unchanged in the process from the initial feeding of the silicon ingot to the complete cutting of the whole bottom surface of the silicon ingot to the complete entering of the silicon ingot into the cutting wire net;
(4) cutting a silicon ingot: the silicon ingot is cut by adopting a forward wiring mode, the silicon ingot is cut, then the silicon ingot is continuously cut by adopting a reverse wiring mode until the cutting is completed, a guide wheel rotates to drive a golden steel wire cutting wire net to horizontally move between a pay-off shaft and a take-up shaft, the silicon ingot in the descending process is cut back and forth by adopting a mode that the number of inlet wires is large and the number of return wires is small, the continuous forward and reverse wiring is kept in the cutting process, and the cutting process is divided into a plurality of steps, namely a first step inlet wire 1000m, a return wire 995 m, a second step inlet wire 800 m and a return wire 795 m.
2. The method of claim 1, wherein the second filler strip is a metal filler strip.
3. The method of claim 1, wherein the bonding plate is a plastic bonding plate.
4. The method of claim 1, wherein the spacer has a thickness of 0.8mm to 1.2 mm.
5. The slicing method as set forth in claim 1, wherein the minimum vertical distance between the wire of gold steel and the ingot is 1mm before slicing.
6. The cutting method for the TTV-reduced monocrystalline silicon wafer according to claim 5, wherein the height of the edge of the gold steel wire is 3 um-5 um.
7. The method for cutting a monocrystalline silicon wafer for reducing TTV according to claim 1, wherein the wire diameter of the gold steel wire is 53 mm-57 mm.
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| CH696431A5 (en) * | 2003-04-01 | 2007-06-15 | Hct Shaping Systems Sa | Process and wire sawing device. |
| DE102007028439A1 (en) * | 2007-06-18 | 2008-12-24 | Schott Ag | Separating flat-parallel silicon wafers from cuboid crystalline or polycrystalline silicon ingot using wire saw for photo-voltaic applications, comprises moving wire around rolls, and attaching the ingot to reception of the wire saw |
| CN205219475U (en) * | 2015-12-21 | 2016-05-11 | 河南盛达光伏科技有限公司 | Novel double cutting of wire cut electrical discharge machining is brilliant holds in palm device |
| CN205552917U (en) * | 2016-02-22 | 2016-09-07 | 巨力新能源股份有限公司 | Coping saw cutting frock of silicon rod |
| CN107214869B (en) * | 2017-07-20 | 2019-11-29 | 阜宁协鑫光伏科技有限公司 | Method for cutting silicon chips |
| CN107599194A (en) * | 2017-08-24 | 2018-01-19 | 天津市环欧半导体材料技术有限公司 | A kind of silicon chip line blanking method |
| CN108556162B (en) * | 2018-05-14 | 2020-09-22 | 邢台晶龙电子材料有限公司 | Method for cutting silicon wafer by using diamond wire |
| CN110181699B (en) * | 2019-05-22 | 2021-05-04 | 江苏吉星新材料有限公司 | Cutting process of sapphire diamond wire multi-line slicing machine |
| CN110497544A (en) * | 2019-08-07 | 2019-11-26 | 江苏高照新能源发展有限公司 | A kind of cutting method applied to ultralow TTV monocrystalline silicon piece |
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