CN108556162B - Method for cutting silicon wafer by using diamond wire - Google Patents
Method for cutting silicon wafer by using diamond wire Download PDFInfo
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- CN108556162B CN108556162B CN201810456126.8A CN201810456126A CN108556162B CN 108556162 B CN108556162 B CN 108556162B CN 201810456126 A CN201810456126 A CN 201810456126A CN 108556162 B CN108556162 B CN 108556162B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/042—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with blades or wires mounted in a reciprocating frame
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
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Abstract
The invention provides a method for cutting a silicon wafer by using a diamond wire, belonging to the technical field of silicon wafer processing and comprising the following steps of: the method comprises the following steps that firstly, a new diamond wire is adopted to cut a silicon block until the cutting depth reaches a first preset depth; step two, cutting the silicon block by using the old diamond wire generated in the step one until the cutting depth reaches a second preset depth; thirdly, cutting the silicon block by using the old diamond wire generated in the second step until the cutting depth reaches a third preset depth; and step four, cutting the rest part of the silicon block by using the old diamond wire generated in the step three. The method for cutting the silicon wafer by using the diamond wire solves the technical problem of large wire consumption in the prior art.
Description
Technical Field
The invention belongs to the technical field of silicon wafer processing, and particularly relates to a method for cutting a silicon wafer by using a diamond wire.
Background
The single and polycrystalline silicon rods for diamond wire cutting have become the mainstream of solar grade silicon wafer cutting, and various special machine tools and modification machine tools are put into use in many times. Electroplating diamond wires become main consumable items for silicon wafer cutting, the price of the electroplating diamond wires is nearly one hundred times that of common steel wires, and in order to reduce the consumable cost, various measures are taken by each silicon wafer processing enterprise to save the consumption of the diamond wires. In order to reduce the usage amount of the diamond wire, a common manufacturer firstly cuts the silicon rod to a certain depth (generally 110-120 mm) by using a new wire and then cuts the rest part by using an old wire, so that the wire consumption is still larger than that of the whole silicon rod which is cut by using the new wire.
Disclosure of Invention
The invention aims to provide a method for cutting a silicon wafer by using a diamond wire, which aims to solve the technical problem of large wire consumption in the prior art.
In order to achieve the purpose, the invention adopts the technical scheme that: the method for cutting the silicon wafer by using the diamond wire comprises the following steps:
the method comprises the following steps that firstly, a new diamond wire is adopted to cut a silicon block until the cutting depth reaches a first preset depth;
step two, cutting the silicon block by using the old diamond wire generated in the step one until the cutting depth reaches a second preset depth;
thirdly, cutting the silicon block by using the old diamond wire generated in the second step until the cutting depth reaches a third preset depth;
and step four, cutting the rest part of the silicon block by using the old diamond wire generated in the step three.
Furthermore, the routing directions of the diamond wires in the first step and the third step are consistent, and are respectively forward routing,
the routing directions of the diamond wires in the second step and the fourth step are consistent, and the diamond wires are reversely routed respectively.
Further, the first preset depth is 85-95 mm, the second preset depth is 125-135 mm, the third preset depth is 145-155 mm, and the total cutting depth of the silicon briquette is 160-165 mm.
Further, the first preset depth is 90mm, the second preset depth is 130mm, the third preset depth is 150mm, and the total cutting depth of the silicon block is 163 mm.
Furthermore, in the first step, the wire routing speed of the diamond wire is 950-1250 m/min,
the wiring speed of the diamond wire in the second step and the wiring speed of the diamond wire in the third step are 1100-1250 m/min respectively,
the wire routing speed of the diamond wire in the fourth step is 1250-950 m/min.
Furthermore, in the first step, the wire speed of the diamond wire is 1000-1200 m/min,
the wiring speed of the diamond wire in the second step and the wiring speed of the diamond wire in the third step are respectively 1200m/min,
the wire routing speed of the diamond wire in the fourth step is 1200-1000 m/min.
Furthermore, the feed speed in the first step is 0.6-1.6 mm/min,
in the second step, the feed speed is 1.4-1.6 mm/min,
the feed speed in the third step is 1.6-1.1 mm/min,
the feed speed in the fourth step is 1.3-0.1 mm/min.
Furthermore, the feed speed in the first step is 0.85-1.5 mm/min,
in the second step, the feed speed is 1.5mm/min,
the feed speed in the third step is 1.5-1.2 mm/min,
the feed speed in the fourth step is 1.2-0.2 mm/min.
Furthermore, the forward routing is realized by forward rotation of the pay-off wheel and the take-up wheel, and the reverse routing is realized by reverse rotation of the pay-off wheel and the take-up wheel.
Furthermore, the tension of the diamond wire is 8-12N.
Compared with the prior art, the method for cutting the silicon wafer by using the diamond wire breaks through the original silicon wafer cutting process, creatively designs a four-step reverse cutting process, divides the whole cutting process into four steps, only uses a new wire to cut in the step one (the cutting depth is 0-85-95 mm), and then respectively uses the old wire generated in the previous step to cut in the three steps, so that the used wire amount after the whole silicon block is cut is the same as the used wire amount in the step one. And because the whole silicon block cutting process is divided into four steps, the cutting stroke of each step can be shortened, and therefore, the cutting can be finished by adopting a relatively small amount of new diamond wires. The first preset depth is set to be 85-95 mm, compared with the traditional cutting process that the cutting depth of a new wire needs to be 110-120 mm, the cutting stroke of the silicon wafer cut by the method provided by the invention is obviously shortened (about 25% of the cutting stroke), and the use amount of the new diamond wire used in the cutting process is effectively ensured to be obviously shortened.
In addition, the cutting stroke of the first step is 85-90 mm, the cutting stroke of the second step is 30-50 mm, the cutting stroke of the third step is 10-30 mm, and the cutting stroke of the fourth step is 10-15 mm, namely the cutting stroke of the next step is about half of the cutting stroke of the previous step, but the cutting wire amount participating in each step is the same, so that the cutting wire amount participating in the unit cutting stroke is gradually increased, the arrangement effectively reduces the adverse effect of diamond wire abrasion on subsequent cutting (the third step and the fourth step), so that the subsequent cutting operation (the third step and the fourth step) can still keep high cutting stability, and particularly shows that the wire arch generated in the cutting wire operation at each stage is small, and the edge phenomenon does not occur when the cutting wire is cut to the end part of the silicon block.
The routing speed of the diamond wire in the first step is gradually increased, and the routing speed of the diamond wire in the second step and the routing speed of the diamond wire in the third step are kept constant; and in the fourth step, the routing speed of the diamond wire is gradually reduced, so that the running stability and the cutting performance stability of the diamond wire are effectively ensured. The feed speed in the first step (controlled by controlling the speed of the feeding mechanism 1 for pushing the silicon block to move downwards) is gradually increased, the feed speed in the second step is kept constant, and the feed speeds in the third step and the fourth step are gradually reduced, so that the consistency of the used linear quantity of each step is effectively ensured.
To verify the feasibility of the method, the inventors used an NTC442DM machine and a plated diamond wire, with a cut cross-section of 1m2And the silicon block with the total cutting depth of 163mm is tested by adopting the method provided by the invention and the traditional cutting method respectively. The test shows that the cutting cross section is 1m2And the cutting depth is 163mm, the whole silicon block can be cut only by using a new diamond wire of about 1.5km by adopting the method (embodiment 1-3) provided by the invention; by using the conventional cutting process (examples 4-6), it is only completed by using 2.5Km or more of diamond wires. Therefore, compared with the traditional cutting process, the cutting method provided by the invention has the advantage that the consumption of the diamond wire is obviously reduced (can be reduced by more than 25%). By adopting the cutting method provided by the invention, no edge breakage phenomenon occurs at the end part of the silicon block.
Analysis has shown that the cutting lines used per mm of cutting depth are relatively large when the cutting method proposed by the present invention is used. The average thread usage per mm of cutting depth was 16.67m for step one, 37.5m for step two, 75m for step three and 115.38m for step four as in example 3, whereas the average thread usage was 20.83m for step one and 34.88m for step two as in example 6. Therefore, except for the step one, the cutting wire usage amount used in each step of the method provided by the invention per millimeter of cutting depth is larger than that used in each step of the traditional method, and the arrangement effectively ensures that the cutting force of the diamond wire can not be reduced along with the abrasion degree of the diamond wire when the method provided by the invention is used for cutting the silicon block, and can always keep enough stability, particularly shows that the arch of the diamond wire is smaller during cutting, further ensures the smoothness of the cutting of the end part of the silicon chip, and avoids the edge breakage phenomenon of the end part of the silicon block.
In summary, the cutting method provided by the present invention can achieve the purpose of saving wire amount without affecting cutting efficiency and quality, which cannot be achieved by the prior art.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIG. 1 is a schematic structural diagram of a diamond wire-cut silicon wafer according to an embodiment of the present invention;
fig. 2 is a flowchart of a method for cutting a silicon wafer by using a diamond wire according to an embodiment of the present invention.
Wherein, in the figures, the respective reference numerals:
1-a feeding mechanism; 2-silicon block; 3-a paying-off wheel; 4-a take-up pulley; 5-diamond wire.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
It will be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like, as used herein, refer to an orientation or positional relationship indicated in the drawings that is solely for the purpose of facilitating the description and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and is therefore not to be construed as limiting the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "plurality" or "a plurality" means two or more unless specifically defined otherwise.
Referring to fig. 1 and 2 together, a method for cutting a silicon wafer by using a diamond wire according to the present invention will now be described, wherein the method for cutting a silicon wafer by using a diamond wire comprises the following steps:
the method comprises the following steps that firstly, a new diamond wire is adopted to cut a silicon block until the cutting depth reaches a first preset depth;
step two, cutting the silicon block by adopting the old diamond wire generated in the step one until the cutting depth reaches a second preset depth;
thirdly, cutting the silicon block by using the old diamond wire generated in the second step until the cutting depth reaches a third preset depth;
and step four, cutting the rest part of the silicon block by adopting the old diamond wire generated in the step three.
Furthermore, the routing directions of the diamond wires in the first step and the third step are consistent, and are respectively positive routing,
the routing directions of the diamond wires in the second step and the fourth step are consistent, and the diamond wires are reversely routed respectively.
When the method for cutting the silicon wafer by the diamond wire can be applied to any machine tool for cutting the silicon wafer by the diamond wire in the market, the silicon block 2 is firstly installed on a feeding mechanism 1 on the machine tool, and the working parameters of equipment, such as the tension of the diamond wire, the feed speed, the wire routing speed of a steel wire, the take-up distance, the wire feeding distance, the temperature of a cutting fluid, the flow of the cutting fluid and the like, are adjusted. After the equipment is adjusted, the equipment is started, the feeding mechanism 1 drives the silicon block 2 to move downwards, the wire is sent by the wire releasing wheel 3, the wire is taken up by the wire taking-up wheel 4, the reciprocating movement of the diamond wire 5 is realized, and then the cutting of the silicon block 2 is realized. This is the prior art and will not be described herein.
Firstly, moving the diamond wire from a pay-off wheel to a take-up wheel, namely, wiring in the forward direction, wherein the wire feeding distance of the equipment is greater than the wire taking-up distance, and cutting the silicon block by using a new wire; when the cutting depth reaches a first preset depth (85-95 mm), entering a second step, reversely rotating a pay-off wheel and a take-up wheel, reversely routing the diamond wires, enabling the wire feeding distance of equipment to be smaller than the wire take-up distance, and continuously cutting the silicon block by using the old diamond wires generated in the first step; after the depth to be cut reaches a second preset depth (125-135 mm), the third step is carried out, the paying-off wheel and the take-up wheel are reversed again (the rotating direction is consistent with that of the first step), the diamond wires are wired in the forward direction again, the wire feeding distance of the device is larger than the wire taking-up distance again, and the old wires generated in the second step are used for continuously cutting the silicon block; and (4) after the depth to be cut reaches a third preset depth (145-155 mm), entering a fourth step, reversely rotating the pay-off wheel and the take-up wheel again (the rotating direction is consistent with that of the second step), reversely routing the diamond wire again, continuously cutting the silicon block by using the old wire generated in the third step until the silicon block cutting operation is finished, wherein the wire feeding distance of the equipment is smaller than the wire take-up distance again. And winding the old wire generated by final cutting onto a pay-off wheel, and unwinding the old wire by an operator for processing.
Therefore, the routing directions of the first step and the third step are the same (both are forward routing), the routing directions of the second step and the fourth step are the same (both are reverse routing), the direction of the second step is opposite to that of the first step, the direction of the third step is opposite to that of the second step, the direction of the fourth step is opposite to that of the third step, four times of direction adjustment are carried out on the diamond wire in the whole cutting process, the direction of each step (except for the first step) is opposite to that of the previous step, and the process is called as a four-step reverse cutting process. The traditional cutting process has two types, one is to cut the silicon block by adopting new lines; and the other method is that the silicon rod is cut to the depth of about 110-120 mm by adopting a new wire, and then the rest part is cut by using the old wire generated in the first step.
Compared with the prior art, the method for cutting the silicon wafer by using the diamond wire breaks through the original silicon wafer cutting process, a four-step reverse cutting process is innovatively designed, the whole cutting process is divided into four steps, a new wire is used for cutting only in the first step (the cutting depth is 0-85-95 mm), and the old wire generated in the last step is used for cutting in the next three steps, so that the used wire amount is the same as the used wire amount in the first step after the whole silicon block is cut. And because the whole silicon block cutting process is divided into four steps, the cutting stroke of each step can be shortened, and therefore, the cutting can be finished by adopting a relatively small amount of new diamond wires.
Furthermore, the first preset depth is 85-95 mm, the second preset depth is 125-135 mm, the third preset depth is 145-155 mm, and the total cutting depth of the silicon block is 160-165 mm.
The first preset depth is set to be 85-95 mm, compared with the traditional cutting process that the cutting depth of a new wire needs to be 110-120 mm, the cutting stroke of the silicon wafer cut by the method provided by the invention is obviously shortened (about 25% of the cutting stroke), and the use amount of the new diamond wire used in the cutting process is effectively ensured to be obviously shortened.
In addition, the cutting stroke of the first step is 85-90 mm, the cutting stroke of the second step is 30-50 mm, the cutting stroke of the third step is 10-30 mm, and the cutting stroke of the fourth step is 10-15 mm, namely the cutting stroke of the next step is about half of the cutting stroke of the previous step, but the cutting wire amount participating in each step is the same, so that the cutting wire amount participating in the unit cutting stroke is gradually increased, the arrangement effectively reduces the adverse effect of diamond wire abrasion on subsequent cutting (the third step and the fourth step), so that the subsequent cutting operation (the third step and the fourth step) can still keep high cutting stability, and particularly shows that the wire arch generated in the cutting wire operation at each stage is small, and the edge phenomenon does not occur when the cutting wire is cut to the end part of the silicon block.
Further, the first preset depth is 90mm, the second preset depth is 130mm, the third preset depth is 150mm, and the total cutting depth of the silicon block is 163 mm.
During cutting, the cutting depth of the silicon block is about 163mm generally, and through tests, when the cutting depth of the silicon block is 163mm, the wire consumption is minimum when the first preset depth is 90mm, the second preset depth is 130mm and the third preset depth is 150mm, and edge breakage phenomenon does not occur at the end part.
Furthermore, in the first step, the wire routing speed of the diamond wire is 950-1250 m/min,
the wiring speed of the diamond wire in the second step and the third step is 1100-1250 m/min respectively,
the wire routing speed of the diamond wire in the fourth step is 1250-950 m/min.
Furthermore, in the first step, the wire speed of the diamond wire is 1000 to 1200m/min,
the wiring speed of the diamond wire in the second step and the third step is 1200m/min respectively,
the wire routing speed of the diamond wire in the fourth step is 1200-1000 m/min.
The routing speed of the diamond wire in the first step is gradually increased, and the routing speed of the diamond wire in the second step and the routing speed of the diamond wire in the third step are kept constant; and in the fourth step, the routing speed of the diamond wire is gradually reduced, so that the running stability and the cutting performance stability of the diamond wire are effectively ensured.
Further, in the first step, the feed speed is 0.6-1.6 mm/min,
in the second step, the feeding speed is 1.4-1.6 mm/min,
the feed speed in the third step is 1.6-1.1 mm/min,
the feed speed in the fourth step is 1.3-0.1 mm/min.
Further, in the first step, the feeding speed is 0.85-1.5 mm/min,
in the second step, the feed speed is 1.5mm/min,
the feed speed in the third step is 1.5-1.2 mm/min,
the feed speed in the fourth step is 1.2-0.2 mm/min.
The feed speed in the first step (controlled by controlling the speed of the feeding mechanism 1 for pushing the silicon block to move downwards) is gradually increased, the feed speed in the second step is kept constant, and the feed speeds in the third step and the fourth step are gradually reduced, so that the consistency of the used linear quantity of each step is effectively ensured.
Further, forward routing is realized through paying out wheel 3 and take-up pulley 4 corotation, and reverse routing is realized through paying out wheel 3 and take-up pulley 4 reversal.
During the use, both can rule unwrapping wire wheel 3 and take-up pulley 4 corotation as the forward and walk the line, also can rule unwrapping wire wheel 3 and take-up pulley 4 reversal as the reversal and walk the line, but the forward is walked the line and is realized more according with most people's use habit through unwrapping wire wheel 3 and take-up pulley 4 corotation.
Furthermore, the tension of the diamond wire is 8-12N.
The tension is set to be 8-12N, so that the use requirement of equipment can be met, and the phenomenon of diamond wire stretching is avoided.
To verify the feasibility of the method, the inventors used an NTC442DM machine and a plated diamond wire, with a cut cross-section of 1m2And the silicon block with the total cutting depth of 163mm is tested by respectively adopting the method provided by the invention and the traditional cutting method, and the specific experimental process is as follows:
example 1:
step one, wiring in a forward direction, namely cutting a silicon block by using a new diamond wire until the cutting depth reaches a first preset depth of 85 mm;
secondly, wiring reversely, namely cutting the silicon block by adopting the old diamond wire generated in the first step until the cutting depth reaches a second preset depth of 125 mm;
thirdly, wiring in the forward direction again, and cutting the silicon block by adopting the old diamond wire generated in the second step until the cutting depth reaches a third preset depth of 145 mm;
and step four, wiring in the reverse direction again, and cutting the rest part of the silicon block by adopting the old diamond wire generated in the step three.
Wherein, the tension of the diamond wire in the cutting process is 8N. In the first step, the routing speed of the diamond wire is 950-1100 m/min, and the feed speed is 0.6-1.4 mm/min; in the second step, the routing speed of the diamond wire is 1100m/min, and the feed speed is 1.4 mm/min; in the third step, the routing speed of the diamond wire is 1100m/min, and the feed speed is 1.4-1.1 mm/min; in the fourth step, the wire routing speed of the diamond wire is 1100-950 m/min, and the feed speed is 1.1-0.1 mm/min.
After the test silicon block is cut, a diamond wire is used for 1.49Km, the end part of the silicon block is intact, and the edge breakage phenomenon does not occur.
Example 2:
step one, wiring in a forward direction, namely cutting a silicon block by using a new diamond wire until the cutting depth reaches a first preset depth of 95 mm;
secondly, wiring reversely, namely cutting the silicon block by adopting the old diamond wire generated in the first step until the cutting depth reaches a second preset depth of 135 mm;
thirdly, wiring in the forward direction again, and cutting the silicon block by adopting the old diamond wire generated in the second step until the cutting depth reaches a third preset depth of 155 mm;
and step four, wiring in the reverse direction again, and cutting the rest part of the silicon block by adopting the old diamond wire generated in the step three.
Wherein the tension of the diamond wire in the cutting process is 12N. In the first step, the routing speed of the diamond wire is 950-1250 m/min, and the feed speed is 0.6-1.6 mm/min; in the second step, the routing speed of the diamond wire is 1250m/min, and the feed speed is 1.6 mm/min; in the third step, the routing speed of the diamond wire is 1250m/min, and the feed speed is 1.6-1.3 mm/min; in the fourth step, the wire routing speed of the diamond wire is 1250 to 950m/min, and the feed speed is 1.3 to 0.1 mm/min.
After the test, the cutting of the silicon block is finished, a diamond wire is used for 1.5Km, the end part of the silicon block is intact, and the edge breakage phenomenon does not occur.
Example 3:
step one, wiring in a forward direction, namely cutting a silicon block by using a new diamond wire until the cutting depth reaches a first preset depth of 90 mm;
secondly, wiring reversely, namely cutting the silicon block by using the old diamond wire generated in the first step until the cutting depth reaches a second preset depth of 130 mm;
thirdly, wiring in the forward direction again, and cutting the silicon block by adopting the old diamond wire generated in the second step until the cutting depth reaches a third preset depth of 150 mm;
and step four, wiring in the reverse direction again, and cutting the rest part of the silicon block by adopting the old diamond wire generated in the step three.
Wherein the tension of the diamond wire in the cutting process is 10N. In the first step, the routing speed of the diamond wire is 1000-1200 m/min, and the feed speed is 0.85-1.5 mm/min; in the second step, the routing speed of the diamond wire is 1200m/min, and the feed speed is 1.5 mm/min; in the third step, the wiring speed of the diamond wire is 1200m/min, and the feed speed is 1.5-1.2 mm/min; in the fourth step, the wire routing speed of the diamond wire is 1200-1000 m/min, and the feed speed is 1.2-0.2 mm/min.
After the test silicon block is cut, a diamond wire is used for 1.46Km, the end part of the silicon block is intact, and the edge breakage phenomenon does not occur.
Example 4:
step one, wiring in a forward direction, namely cutting a silicon block by using a new diamond wire until the cutting depth reaches 110 mm;
and step two, wiring reversely, and cutting the rest part of the silicon block by adopting the old diamond wire generated in the step one.
Wherein, the tension of the diamond wire in the cutting process is 8N. In the first step, the routing speed of the diamond wire is 950-1100 m/min, and the feed speed is 0.6-1.4 mm/min; in the second step, the wire routing speed of the diamond wire is 1100-950 m/min, and the feed speed is 1.4-0.1 mm/min.
After the test silicon block is cut, a diamond wire is used for 2.7Km, and the edge breakage phenomenon occurs at the end part of the silicon block.
Example 5:
step one, wiring in a forward direction, namely cutting a silicon block by using a new diamond wire until the cutting depth reaches 120 mm;
and step two, wiring reversely, and cutting the rest part of the silicon block by adopting the old diamond wire generated in the step one.
Wherein the tension of the diamond wire in the cutting process is 12N. In the first step, the routing speed of the diamond wire is 950-1250 m/min, and the feed speed is 0.6-1.6 mm/min; in the second step, the wire routing speed of the diamond wire is 1250 to 950m/min, and the feed speed is 1.6 to 0.1 mm/min.
After the test silicon block is cut, a diamond wire is used for 2.8Km, and the edge breakage phenomenon occurs at the end part of the silicon block.
Example 6:
step one, wiring in a forward direction, namely cutting a silicon block by using a new diamond wire until the cutting depth reaches 120 mm;
and step two, wiring reversely, and cutting the rest part of the silicon block by adopting the old diamond wire generated in the step one.
Wherein the tension of the diamond wire in the cutting process is 10N. In the first step, the routing speed of the diamond wire is 1000-1200 m/min, and the feed speed is 0.85-1.5 mm/min; in the second step, the wire routing speed of the diamond wire is 1200-1000 m/min, and the feed speed is 1.5-0.2 mm/min.
After the test silicon block is cut, a diamond wire is used for 2.5Km, and the edge breakage phenomenon occurs at the end part of the silicon block.
To facilitate the observation and comparison, the inventors conducted comparative analysis on the cutting methods and cutting results of examples 1-6, as shown in table one:
table one: comparative table of cutting methods and cutting results in examples 1 to 6
Note: tangent is the forward routing cut and reverse is the reverse routing cut.
The test shows that the cutting cross section is 1m2The method of the present invention (examples 1 to 3) used only about 1.5km for a silicon block with a cutting depth of 163mmThe new diamond wire can complete the cutting of the whole silicon block; by using the conventional cutting process (examples 4-6), it is only completed by using 2.5Km or more of diamond wires. Therefore, compared with the traditional cutting process, the cutting method provided by the invention has the advantage that the consumption of the diamond wire is obviously reduced (can be reduced by more than 25%). By adopting the cutting method provided by the invention, no edge breakage phenomenon occurs at the end part of the silicon block.
Analysis has shown that the cutting lines used per mm of cutting depth are relatively large when the cutting method proposed by the present invention is used. The average thread usage per mm of cutting depth was 16.67m for step one, 37.5m for step two, 75m for step three and 115.38m for step four as in example 3, whereas the average thread usage was 20.83m for step one and 34.88m for step two as in example 6. Therefore, except for the step one, the cutting wire usage amount used in each step of the method provided by the invention per millimeter of cutting depth is larger than that used in each step of the traditional method, and the arrangement effectively ensures that the cutting force of the diamond wire can not be reduced along with the abrasion degree of the diamond wire when the method provided by the invention is used for cutting the silicon block, and can always keep enough stability, particularly shows that the arch of the diamond wire is smaller during cutting, further ensures the smoothness of the cutting of the end part of the silicon chip, and avoids the edge breakage phenomenon of the end part of the silicon block.
In summary, the cutting method provided by the present invention can achieve the purpose of saving wire amount without affecting cutting efficiency and quality, which cannot be achieved by the prior art.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (9)
1. A method for cutting a silicon wafer by using a diamond wire is characterized by comprising the following steps: the method comprises the following steps:
the method comprises the following steps that firstly, a new diamond wire is adopted to cut a silicon block until the cutting depth reaches a first preset depth;
step two, cutting the silicon block by using the old diamond wire generated in the step one until the cutting depth reaches a second preset depth;
thirdly, cutting the silicon block by using the old diamond wire generated in the second step until the cutting depth reaches a third preset depth;
step four, cutting the rest part of the silicon block by adopting the old diamond wire generated in the step three;
wherein, in the first step, the wire routing speed of the diamond wire is 950-1250 m/min,
the wiring speed of the diamond wire in the second step and the wiring speed of the diamond wire in the third step are 1100-1250 m/min respectively,
the wire routing speed of the diamond wire in the fourth step is 1250-950 m/min.
2. The method for cutting silicon wafer by using diamond wire as claimed in claim 1, wherein: the routing directions of the diamond wires in the first step and the third step are consistent, and the diamond wires are respectively routed in the positive direction,
the routing directions of the diamond wires in the second step and the fourth step are consistent, and the diamond wires are reversely routed respectively.
3. The method for cutting silicon wafer by using diamond wire as claimed in claim 1, wherein: the total cutting depth of the silicon block is 160-165 mm, the first preset depth is 85-95 mm, the second preset depth is 125-135 mm, and the third preset depth is 145-155 mm.
4. A method for cutting a silicon wafer using a diamond wire as set forth in claim 3, wherein: the first preset depth is 90mm, the second preset depth is 130mm, the third preset depth is 150mm, and the total cutting depth of the silicon block is 163 mm.
5. The method for cutting silicon wafer by using diamond wire as claimed in claim 1, wherein: in the first step, the wire speed of the diamond wire is 1000-1200 m/min,
the wiring speed of the diamond wire in the second step and the wiring speed of the diamond wire in the third step are respectively 1200m/min,
the wire routing speed of the diamond wire in the fourth step is 1200-1000 m/min.
6. The method for cutting silicon wafer by using diamond wire as claimed in claim 1, wherein: the feeding speed in the first step is 0.6-1.6 mm/min,
in the second step, the feed speed is 1.4-1.6 mm/min,
the feed speed in the third step is 1.6-1.1 mm/min,
the feed speed in the fourth step is 1.3-0.1 mm/min.
7. A method for cutting a silicon wafer using a diamond wire as set forth in claim 6, wherein: the feeding speed in the first step is 0.85-1.5 mm/min,
in the second step, the feed speed is 1.5mm/min,
the feed speed in the third step is 1.5-1.2 mm/min,
the feed speed in the fourth step is 1.2-0.2 mm/min.
8. A method for cutting a silicon wafer using a diamond wire as set forth in claim 2, wherein: the forward wiring is realized by forward rotation of the pay-off wheel (3) and the take-up wheel (4), and the reverse wiring is realized by reverse rotation of the pay-off wheel (3) and the take-up wheel (4).
9. The method for cutting silicon wafer by using diamond wire as claimed in any one of claims 1 to 8, wherein: the tension of the diamond wire is 8-12N.
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| CN110126104A (en) * | 2019-03-25 | 2019-08-16 | 苏州芯海半导体科技有限公司 | A kind of gallium arsenide wafer cutting method |
| CN110394911B (en) * | 2019-07-26 | 2021-08-06 | 扬州续笙新能源科技有限公司 | Secondary utilization method of diamond wire suitable for silicon wafer production and manufacturing |
| CN110394912A (en) * | 2019-08-07 | 2019-11-01 | 江苏高照新能源发展有限公司 | A kind of efficient monocrystalline silicon piece cutting technique |
| CN112936623A (en) * | 2019-12-10 | 2021-06-11 | 阿特斯光伏电力(洛阳)有限公司 | Cutting method of diamond wire cutting device |
| CN111015985A (en) * | 2020-01-03 | 2020-04-17 | 天津市环欧半导体材料技术有限公司 | Method for cutting fine-lined silicon wafer |
| CN111633854B (en) * | 2020-06-05 | 2022-07-08 | 江苏美科太阳能科技股份有限公司 | Cutting method of monocrystalline silicon wafer for reducing TTV |
| CN112026032B (en) * | 2020-09-03 | 2022-08-05 | 阜宁协鑫光伏科技有限公司 | M12 large-size silicon wafer cutting method |
| CN112692704A (en) * | 2020-12-14 | 2021-04-23 | 浙江英洛华磁业有限公司 | Method for processing magnetic material by utilizing linear cutting |
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| JP3827675B2 (en) * | 2004-02-26 | 2006-09-27 | 株式会社ノリタケスーパーアブレーシブ | Cutting device |
| CN101628452B (en) * | 2009-07-31 | 2011-09-28 | 宁波升日太阳能电源有限公司 | Method for cutting silicon chips |
| CN102039638B (en) * | 2009-10-26 | 2013-04-24 | 英利能源（中国）有限公司 | Cutting method for cutting substrate by utilizing cutting line |
| TW201226087A (en) * | 2010-12-31 | 2012-07-01 | Micron Diamond Wire & Equipment Co Ltd | Cutting and cooling device of diamond wire |
| CN102785297A (en) * | 2012-08-20 | 2012-11-21 | 上海日进机床有限公司 | Multiline cutting method and equipment |
| JP5888203B2 (en) * | 2012-10-25 | 2016-03-16 | 信越半導体株式会社 | Manufacturing method of slurry for wire saw |
| CN107160576B (en) * | 2017-07-10 | 2018-08-14 | 杨凌美畅新材料股份有限公司 | A method of plating diamond wire fly-cutting silicon chip |
| CN107214869B (en) * | 2017-07-20 | 2019-11-29 | 阜宁协鑫光伏科技有限公司 | Method for cutting silicon chips |
| CN107379294B (en) * | 2017-07-20 | 2019-12-27 | 阜宁协鑫光伏科技有限公司 | Method for cutting silicon wafer by reusing diamond wire |
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