KR101560647B1 - 저-스테인 연마 조성물 - Google Patents

저-스테인 연마 조성물 Download PDF

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Publication number
KR101560647B1
KR101560647B1 KR1020090014258A KR20090014258A KR101560647B1 KR 101560647 B1 KR101560647 B1 KR 101560647B1 KR 1020090014258 A KR1020090014258 A KR 1020090014258A KR 20090014258 A KR20090014258 A KR 20090014258A KR 101560647 B1 KR101560647 B1 KR 101560647B1
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South Korea
Prior art keywords
acid
percent
weight
weight percent
copper
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KR1020090014258A
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English (en)
Korean (ko)
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KR20090091055A (ko
Inventor
테렌스 엠. 토마스
왕훙위
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
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Application filed by 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 filed Critical 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
Publication of KR20090091055A publication Critical patent/KR20090091055A/ko
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020090014258A 2008-02-22 2009-02-20 저-스테인 연마 조성물 Active KR101560647B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/071,000 2008-02-22
US12/071,000 US9633865B2 (en) 2008-02-22 2008-02-22 Low-stain polishing composition

Publications (2)

Publication Number Publication Date
KR20090091055A KR20090091055A (ko) 2009-08-26
KR101560647B1 true KR101560647B1 (ko) 2015-10-16

Family

ID=40521509

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090014258A Active KR101560647B1 (ko) 2008-02-22 2009-02-20 저-스테인 연마 조성물

Country Status (6)

Country Link
US (1) US9633865B2 (https=)
EP (1) EP2093790B1 (https=)
JP (1) JP5479755B2 (https=)
KR (1) KR101560647B1 (https=)
CN (1) CN101525522B (https=)
TW (1) TWI447188B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2767805A1 (en) * 2009-07-06 2011-01-13 Prestone Products Corporation Methods and composition for cleaning a heat transfer system having an aluminum component
US20140030897A1 (en) * 2011-02-03 2014-01-30 Sumco Corporation Polishing composition and polishing method using the same
US8435896B2 (en) * 2011-03-03 2013-05-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable chemical mechanical polishing composition and methods relating thereto
US8440097B2 (en) * 2011-03-03 2013-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition
WO2014013977A1 (ja) * 2012-07-17 2014-01-23 株式会社 フジミインコーポレーテッド 合金材料研磨用組成物及びそれを用いた合金材料の製造方法
WO2017130749A1 (ja) * 2016-01-28 2017-08-03 株式会社フジミインコーポレーテッド 研磨用組成物
CN107350978A (zh) * 2017-07-26 2017-11-17 天津市职业大学 一种绿色固定磨料抛光片及其制备方法
CN114481286A (zh) * 2021-12-28 2022-05-13 广东省科学院化工研究所 一种用于电解抛光的固体颗粒物
CN114561187B (zh) * 2022-03-07 2022-10-21 山东麦丰新材料科技股份有限公司 一种环保型乳化精磨液及其制备方法
CN116948648A (zh) * 2023-06-30 2023-10-27 浙江奥首材料科技有限公司 一种半导体芯片二氧化硅蚀刻液、制备方法及其应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150306A (ja) * 2003-11-13 2005-06-09 Asahi Glass Co Ltd 銅配線研磨用組成物、半導体集積回路表面の研磨方法および半導体集積回路用銅配線の作製方法
US20060111024A1 (en) * 2004-11-24 2006-05-25 Hongyu Wang Cellulose-containing polishing compositions and methods relating thereto

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7029373B2 (en) 2001-08-14 2006-04-18 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US20030119692A1 (en) * 2001-12-07 2003-06-26 So Joseph K. Copper polishing cleaning solution
GB0216815D0 (en) 2002-07-19 2002-08-28 Aoti Operating Co Inc Detection method and apparatus
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US7390744B2 (en) * 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
KR100816651B1 (ko) * 2006-03-31 2008-03-27 테크노세미켐 주식회사 제올라이트를 함유하는 구리 화학 기계적 연마 조성물
CN100491072C (zh) * 2006-06-09 2009-05-27 河北工业大学 Ulsi多层铜布线化学机械抛光中碟形坑的控制方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150306A (ja) * 2003-11-13 2005-06-09 Asahi Glass Co Ltd 銅配線研磨用組成物、半導体集積回路表面の研磨方法および半導体集積回路用銅配線の作製方法
US20060111024A1 (en) * 2004-11-24 2006-05-25 Hongyu Wang Cellulose-containing polishing compositions and methods relating thereto

Also Published As

Publication number Publication date
US9633865B2 (en) 2017-04-25
JP5479755B2 (ja) 2014-04-23
CN101525522A (zh) 2009-09-09
TWI447188B (zh) 2014-08-01
EP2093790B1 (en) 2020-06-24
US20090215265A1 (en) 2009-08-27
EP2093790A2 (en) 2009-08-26
TW200938603A (en) 2009-09-16
KR20090091055A (ko) 2009-08-26
CN101525522B (zh) 2012-08-29
EP2093790A3 (en) 2009-12-23
JP2009200495A (ja) 2009-09-03

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