KR101547823B1 - 기판의 가공 장치 - Google Patents
기판의 가공 장치 Download PDFInfo
- Publication number
- KR101547823B1 KR101547823B1 KR1020130062308A KR20130062308A KR101547823B1 KR 101547823 B1 KR101547823 B1 KR 101547823B1 KR 1020130062308 A KR1020130062308 A KR 1020130062308A KR 20130062308 A KR20130062308 A KR 20130062308A KR 101547823 B1 KR101547823 B1 KR 101547823B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- sensor
- holder
- tool
- base
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 75
- 238000001514 detection method Methods 0.000 claims abstract description 11
- 238000003754 machining Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- 238000003825 pressing Methods 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 12
- 239000010409 thin film Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- -1 chalcopyrite structure compound Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012142674A JP2014004776A (ja) | 2012-06-26 | 2012-06-26 | 基板の加工装置 |
JPJP-P-2012-142674 | 2012-06-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20140004000A KR20140004000A (ko) | 2014-01-10 |
KR101547823B1 true KR101547823B1 (ko) | 2015-08-27 |
Family
ID=49897749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020130062308A KR101547823B1 (ko) | 2012-06-26 | 2013-05-31 | 기판의 가공 장치 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2014004776A (zh) |
KR (1) | KR101547823B1 (zh) |
CN (1) | CN103515219B (zh) |
TW (1) | TWI521730B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102355043B1 (ko) * | 2014-03-28 | 2022-01-25 | 엘지디스플레이 주식회사 | 디스플레이 장치 및 이를 제조하는 벤딩 장치 |
CN104716070B (zh) * | 2015-04-03 | 2017-12-26 | 合肥京东方光电科技有限公司 | 尺寸检测装置及基板装载装置 |
CN105171089A (zh) * | 2015-07-24 | 2015-12-23 | 南通福通机床有限公司 | 一种龙门机床 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011071157A (ja) * | 2009-09-24 | 2011-04-07 | Dainippon Screen Mfg Co Ltd | 電極形成装置および電極形成方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003267742A (ja) * | 2002-03-13 | 2003-09-25 | Nakamura Tome Precision Ind Co Ltd | 硬質脆性板のスクライブ方法 |
JP3867230B2 (ja) * | 2002-09-26 | 2007-01-10 | 本田技研工業株式会社 | メカニカルスクライブ装置 |
JP4373922B2 (ja) * | 2002-11-06 | 2009-11-25 | 三星ダイヤモンド工業株式会社 | スクライブライン形成装置及びスクライブライン形成方法 |
JP2006119024A (ja) * | 2004-10-22 | 2006-05-11 | Tokyo Electron Ltd | プローブおよびその製造方法 |
JP2011155151A (ja) * | 2010-01-27 | 2011-08-11 | Mitsuboshi Diamond Industrial Co Ltd | 薄膜太陽電池用スクライブ装置 |
JP5145368B2 (ja) * | 2010-03-29 | 2013-02-13 | 三星ダイヤモンド工業株式会社 | 積層基板のパターニング装置 |
JP5912395B2 (ja) * | 2011-10-14 | 2016-04-27 | 三星ダイヤモンド工業株式会社 | 基板上面検出方法及びスクライブ装置 |
-
2012
- 2012-06-26 JP JP2012142674A patent/JP2014004776A/ja active Pending
-
2013
- 2013-05-31 KR KR1020130062308A patent/KR101547823B1/ko not_active IP Right Cessation
- 2013-06-05 TW TW102119859A patent/TWI521730B/zh not_active IP Right Cessation
- 2013-06-14 CN CN201310236843.7A patent/CN103515219B/zh not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011071157A (ja) * | 2009-09-24 | 2011-04-07 | Dainippon Screen Mfg Co Ltd | 電極形成装置および電極形成方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201401546A (zh) | 2014-01-01 |
JP2014004776A (ja) | 2014-01-16 |
TWI521730B (zh) | 2016-02-11 |
CN103515219A (zh) | 2014-01-15 |
KR20140004000A (ko) | 2014-01-10 |
CN103515219B (zh) | 2016-08-10 |
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GRNT | Written decision to grant | ||
LAPS | Lapse due to unpaid annual fee |