KR20140004000A - 기판의 가공 장치 - Google Patents
기판의 가공 장치 Download PDFInfo
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- KR20140004000A KR20140004000A KR1020130062308A KR20130062308A KR20140004000A KR 20140004000 A KR20140004000 A KR 20140004000A KR 1020130062308 A KR1020130062308 A KR 1020130062308A KR 20130062308 A KR20130062308 A KR 20130062308A KR 20140004000 A KR20140004000 A KR 20140004000A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Laser Beam Processing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Milling, Broaching, Filing, Reaming, And Others (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
(해결 수단) 이 가공 장치는, 기판의 표면을 가공하기 위한 장치로서, 기판이 올려놓여지는 테이블(1)과, 헤드(3)와, 모터(18)와, 센서(19)와, 제어부(24)를 구비하고 있다. 헤드(3)는, 테이블(1)에 대하여 수평 방향으로 상대 이동이 가능한 베이스(16)와, 선단(先端)에 가공용의 툴(2)이 장착되어 베이스(16)에 승강이 자유롭게 지지된 홀더(17)를 갖는다. 모터(18)는 베이스(16)에 대하여 홀더(17)를 승강시킨다. 센서(19)는 기판 표면의 높이 위치를 검출한다. 제어부(24)는, 센서(19)의 검출 결과에 기초해 모터(18) 구동 기구를 제어하여, 홀더(17)의 높이 위치를 제어한다.
Description
도 2는 본 발명의 제1 실시 형태의 헤드의 개략도이다.
도 3은 본 발명의 제2 실시 형태의 헤드의 개략도이다.
2 : 툴
3, 30 : 헤드
16, 32 : 베이스
17, 33 : 홀더
18, 34 : 모터
19, 38 : 센서
21, 35 : 홀더 본체
22, 36 : 툴 장착부
23, 37 : 에어 실린더
24, 40 : 제어부
Claims (6)
- 기판의 표면을 가공하기 위한 가공 장치로서,
기판이 올려놓여지는 테이블과,
상기 테이블에 대하여 수평 방향으로 상대 이동이 가능한 베이스와, 선단(先端)에 가공용의 툴이 장착되어 상기 베이스에 승강이 자유롭게 지지된 홀더를 갖는 헤드와,
상기 베이스에 대하여 상기 홀더를 승강시키는 구동 기구와,
상기 기판 표면의 높이 위치를 검출하는 센서와,
상기 센서의 검출 결과에 기초해 상기 구동 기구를 제어하여, 상기 홀더의 높이 위치를 제어하는 제어부를 구비한 기판의 가공 장치. - 제1항에 있어서,
상기 홀더는,
홀더 본체와,
상기 홀더 본체에 대하여 승강이 자유롭게 지지되고, 하단부에 상기 툴이 장착되는 툴 장착부와,
상기 툴 장착부를 상기 테이블 상의 기판에 대하여 압압하기 위한 압압 수단을 갖고 있는 기판의 가공 장치. - 제2항에 있어서,
상기 압압 수단은, 피스톤 로드의 선단이 상기 툴 장착부에 연결된 에어 실린더인 기판의 가공 장치. - 제1항 내지 제3항 중 어느 한 항에 있어서,
상기 센서는 상기 기판의 표면에 레이저광을 조사하여 상기 기판의 표면의 높이 위치를 측정하는 기판의 가공 장치. - 제1항 내지 제3항 중 어느 한 항에 있어서,
상기 센서는 상기 베이스에 장착되어 있으며,
상기 제어부는 상기 센서로부터의 검출 결과를 받아, 상기 센서와 상기 기판 표면과의 사이의 거리의 변화분에 따라서 상기 구동 기구를 제어하는 기판의 가공 장치. - 제2항 또는 제3항에 있어서,
상기 센서는 상기 홀더 본체에 장착되어 있으며,
상기 제어부는 상기 센서로부터의 검출 결과를 받아, 상기 센서와 상기 기판 표면과의 사이의 거리가 항상 일정해지도록 상기 구동 기구를 제어하는 기판의 가공 장치.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012142674A JP2014004776A (ja) | 2012-06-26 | 2012-06-26 | 基板の加工装置 |
| JPJP-P-2012-142674 | 2012-06-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20140004000A true KR20140004000A (ko) | 2014-01-10 |
| KR101547823B1 KR101547823B1 (ko) | 2015-08-27 |
Family
ID=49897749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020130062308A Expired - Fee Related KR101547823B1 (ko) | 2012-06-26 | 2013-05-31 | 기판의 가공 장치 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2014004776A (ko) |
| KR (1) | KR101547823B1 (ko) |
| CN (1) | CN103515219B (ko) |
| TW (1) | TWI521730B (ko) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102355043B1 (ko) * | 2014-03-28 | 2022-01-25 | 엘지디스플레이 주식회사 | 디스플레이 장치 및 이를 제조하는 벤딩 장치 |
| CN104716070B (zh) * | 2015-04-03 | 2017-12-26 | 合肥京东方光电科技有限公司 | 尺寸检测装置及基板装载装置 |
| CN105171089A (zh) * | 2015-07-24 | 2015-12-23 | 南通福通机床有限公司 | 一种龙门机床 |
| CN111790943A (zh) * | 2020-06-30 | 2020-10-20 | 湖南金立星机械科技有限公司 | 激光测料高装置及双头锯切割机 |
| CN115008547A (zh) * | 2022-06-30 | 2022-09-06 | 广东暖丰电热科技有限公司 | 一种检测装置及裁切机 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003267742A (ja) * | 2002-03-13 | 2003-09-25 | Nakamura Tome Precision Ind Co Ltd | 硬質脆性板のスクライブ方法 |
| JP3867230B2 (ja) * | 2002-09-26 | 2007-01-10 | 本田技研工業株式会社 | メカニカルスクライブ装置 |
| US8348115B2 (en) * | 2002-11-06 | 2013-01-08 | Mitsuboshi Diamond Industrial Co., Ltd. | Scribe line forming device and scribe line forming method |
| JP2006119024A (ja) * | 2004-10-22 | 2006-05-11 | Tokyo Electron Ltd | プローブおよびその製造方法 |
| JP5395592B2 (ja) * | 2009-09-24 | 2014-01-22 | 大日本スクリーン製造株式会社 | 電極形成装置および電極形成方法 |
| JP2011155151A (ja) * | 2010-01-27 | 2011-08-11 | Mitsuboshi Diamond Industrial Co Ltd | 薄膜太陽電池用スクライブ装置 |
| JP5145368B2 (ja) * | 2010-03-29 | 2013-02-13 | 三星ダイヤモンド工業株式会社 | 積層基板のパターニング装置 |
| JP5912395B2 (ja) * | 2011-10-14 | 2016-04-27 | 三星ダイヤモンド工業株式会社 | 基板上面検出方法及びスクライブ装置 |
-
2012
- 2012-06-26 JP JP2012142674A patent/JP2014004776A/ja active Pending
-
2013
- 2013-05-31 KR KR1020130062308A patent/KR101547823B1/ko not_active Expired - Fee Related
- 2013-06-05 TW TW102119859A patent/TWI521730B/zh not_active IP Right Cessation
- 2013-06-14 CN CN201310236843.7A patent/CN103515219B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN103515219A (zh) | 2014-01-15 |
| TWI521730B (zh) | 2016-02-11 |
| JP2014004776A (ja) | 2014-01-16 |
| KR101547823B1 (ko) | 2015-08-27 |
| CN103515219B (zh) | 2016-08-10 |
| TW201401546A (zh) | 2014-01-01 |
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