KR101544772B1 - 나노구조 반도체 발광소자 및 제조방법 - Google Patents

나노구조 반도체 발광소자 및 제조방법 Download PDF

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Publication number
KR101544772B1
KR101544772B1 KR1020130164521A KR20130164521A KR101544772B1 KR 101544772 B1 KR101544772 B1 KR 101544772B1 KR 1020130164521 A KR1020130164521 A KR 1020130164521A KR 20130164521 A KR20130164521 A KR 20130164521A KR 101544772 B1 KR101544772 B1 KR 101544772B1
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KR
South Korea
Prior art keywords
layer
nanocore
current blocking
intermediate layer
blocking intermediate
Prior art date
Application number
KR1020130164521A
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English (en)
Korean (ko)
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KR20150050284A (ko
Inventor
서연우
김정섭
최영진
데니스 사니코프
성한규
천대명
허재혁
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to US14/485,663 priority Critical patent/US9099573B2/en
Priority to PCT/KR2014/010310 priority patent/WO2015065071A1/ko
Priority to DE112014004968.9T priority patent/DE112014004968T5/de
Priority to CN201480065440.3A priority patent/CN105765741B/zh
Publication of KR20150050284A publication Critical patent/KR20150050284A/ko
Priority to US14/790,047 priority patent/US9257605B2/en
Application granted granted Critical
Publication of KR101544772B1 publication Critical patent/KR101544772B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
KR1020130164521A 2013-10-31 2013-12-26 나노구조 반도체 발광소자 및 제조방법 KR101544772B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US14/485,663 US9099573B2 (en) 2013-10-31 2014-09-12 Nano-structure semiconductor light emitting device
PCT/KR2014/010310 WO2015065071A1 (ko) 2013-10-31 2014-10-30 나노구조 반도체 발광소자
DE112014004968.9T DE112014004968T5 (de) 2013-10-31 2014-10-30 Lichtemittierende Nanostruktur-Halbleitervorrichtung
CN201480065440.3A CN105765741B (zh) 2013-10-31 2014-10-30 纳米结构半导体发光器件
US14/790,047 US9257605B2 (en) 2013-10-31 2015-07-02 Nano-structure semiconductor light emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020130131310 2013-10-31
KR20130131310 2013-10-31

Publications (2)

Publication Number Publication Date
KR20150050284A KR20150050284A (ko) 2015-05-08
KR101544772B1 true KR101544772B1 (ko) 2015-08-17

Family

ID=53388198

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130164521A KR101544772B1 (ko) 2013-10-31 2013-12-26 나노구조 반도체 발광소자 및 제조방법

Country Status (3)

Country Link
KR (1) KR101544772B1 (de)
CN (1) CN105765741B (de)
DE (1) DE112014004968T5 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102188494B1 (ko) * 2014-07-21 2020-12-09 삼성전자주식회사 반도체 발광소자, 반도체 발광소자 제조방법 및 반도체 발광소자 패키지 제조방법
KR102346720B1 (ko) * 2015-06-22 2022-01-03 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 이를 포함하는 발광소자 패키지
WO2018159598A1 (ja) * 2017-02-28 2018-09-07 京セラ株式会社 屋外用画像照射装置およびこれを備える移動体
JP6947386B2 (ja) * 2017-06-29 2021-10-13 学校法人 名城大学 半導体発光素子および半導体発光素子の製造方法
KR102220032B1 (ko) * 2018-08-20 2021-02-25 한국과학기술원 폴리 실리콘 이미터 층이 삽입된 2-단자 바이리스터 및 그 제조 방법
CN109148654B (zh) * 2018-08-30 2020-04-07 芜湖德豪润达光电科技有限公司 非极性面ⅲ族氮化物外延结构及其制备方法
US10777728B2 (en) * 2019-01-18 2020-09-15 Microsoft Technology Licensing, Llc Fabrication of a quantum device
KR20210000351A (ko) 2019-06-24 2021-01-05 삼성전자주식회사 반도체 발광소자 및 디스플레이 장치

Also Published As

Publication number Publication date
CN105765741A (zh) 2016-07-13
KR20150050284A (ko) 2015-05-08
CN105765741B (zh) 2018-07-24
DE112014004968T5 (de) 2016-08-04

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