KR101543010B1 - 화학적 기상 증착 반응기에서 튜브 필라멘트들에 대한 척 연결점 및 브릿지 연결점 - Google Patents

화학적 기상 증착 반응기에서 튜브 필라멘트들에 대한 척 연결점 및 브릿지 연결점 Download PDF

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KR101543010B1
KR101543010B1 KR1020117001569A KR20117001569A KR101543010B1 KR 101543010 B1 KR101543010 B1 KR 101543010B1 KR 1020117001569 A KR1020117001569 A KR 1020117001569A KR 20117001569 A KR20117001569 A KR 20117001569A KR 101543010 B1 KR101543010 B1 KR 101543010B1
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South Korea
Prior art keywords
chuck
tube
filament
bridge
tube filament
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KR1020117001569A
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Korean (ko)
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KR20110081934A (ko
Inventor
제프리 씨. 검
케이쓰 밸린저
칼 샤르티에
앤디 쉬웨인
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지티에이티 코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining
    • Y10T29/49885—Assembling or joining with coating before or during assembling

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020117001569A 2008-06-23 2009-06-23 화학적 기상 증착 반응기에서 튜브 필라멘트들에 대한 척 연결점 및 브릿지 연결점 Expired - Fee Related KR101543010B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7482408P 2008-06-23 2008-06-23
US61/074,824 2008-06-23

Publications (2)

Publication Number Publication Date
KR20110081934A KR20110081934A (ko) 2011-07-15
KR101543010B1 true KR101543010B1 (ko) 2015-08-07

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117001569A Expired - Fee Related KR101543010B1 (ko) 2008-06-23 2009-06-23 화학적 기상 증착 반응기에서 튜브 필라멘트들에 대한 척 연결점 및 브릿지 연결점

Country Status (10)

Country Link
US (1) US20110203101A1 (https=)
EP (1) EP2321446B1 (https=)
JP (1) JP5636365B2 (https=)
KR (1) KR101543010B1 (https=)
CN (1) CN102084028B (https=)
ES (1) ES2636966T3 (https=)
MY (1) MY157446A (https=)
RU (1) RU2011102451A (https=)
TW (1) TWI458854B (https=)
WO (1) WO2010008477A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101901356B1 (ko) 2018-03-23 2018-09-28 그린스펙(주) 열 필라멘트 화학기상증착 장치의 열 필라멘트 텐션 유지 장치

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10494714B2 (en) 2011-01-03 2019-12-03 Oci Company Ltd. Chuck for chemical vapor deposition systems and related methods therefor
US9102035B2 (en) * 2012-03-12 2015-08-11 MEMC Electronics Materials S.p.A. Method for machining seed rods for use in a chemical vapor deposition polysilicon reactor
DE102013215093A1 (de) * 2013-08-01 2015-02-05 Wacker Chemie Ag Trägerkörper für die Abscheidung von polykristallinem Silicium
KR101590607B1 (ko) * 2013-11-20 2016-02-01 한화케미칼 주식회사 폴리실리콘 제조 장치
TW201531440A (zh) * 2013-12-30 2015-08-16 Hemlock Semiconductor Corp 用於耦合至設置在反應器內之電極上之插座以生長多晶矽的載體
DE102014200058A1 (de) * 2014-01-07 2015-07-09 Wacker Chemie Ag Vorrichtung zum Aufnehmen und Transport eines Siliciumstabs sowie Verfahren zur Herstellung von polykristallinem Silicium
US10450649B2 (en) * 2014-01-29 2019-10-22 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance
US9254470B1 (en) 2014-10-10 2016-02-09 Rec Silicon Inc Segmented liner and transition support ring for use in a fluidized bed reactor
WO2017087293A1 (en) 2015-11-16 2017-05-26 Gtat Corporation Chemical vapor deposition method and apparatus
US20180086044A1 (en) * 2016-09-23 2018-03-29 Oci Company Ltd. Apparatus and method for separating polysilicon-carbon chuck
US20180308661A1 (en) * 2017-04-24 2018-10-25 Applied Materials, Inc. Plasma reactor with electrode filaments
CN114007979B (zh) 2019-06-17 2024-10-29 株式会社德山 硅棒的保护结构体及硅棒的制造方法

Citations (4)

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Publication number Priority date Publication date Assignee Title
US4150168A (en) 1977-03-02 1979-04-17 Kabushiki Kaisha Komatsu Seisakusho Method and apparatus for manufacturing high-purity silicon rods
US4805556A (en) 1988-01-15 1989-02-21 Union Carbide Corporation Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane
EP0529593A1 (en) 1991-08-29 1993-03-03 Ucar Carbon Technology Corporation A glass carbon coated graphite chuck for use in producing polycrystalline silicon
US5284640A (en) 1989-12-26 1994-02-08 Advanced Silicon Materials, Inc. Graphite chuck having a hydrogen impervious outer coating layer

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US2805565A (en) * 1954-03-29 1957-09-10 Racek Alfred Pyrophoric lighter
US2805556A (en) * 1955-11-22 1957-09-10 Wang Wensan Pocket liquid cooling device
US3635757A (en) * 1965-07-29 1972-01-18 Monsanto Co Epitaxial deposition method
US3647530A (en) * 1969-11-13 1972-03-07 Texas Instruments Inc Production of semiconductor material
DE2050076C3 (de) * 1970-10-12 1980-06-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Herstellen von Rohren aus Halbleitermaterial
DE2541215C3 (de) * 1975-09-16 1978-08-03 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren zur Herstellung von Siliciumhohlkörpern
US4173944A (en) * 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber
EP0045191A1 (en) * 1980-07-28 1982-02-03 Monsanto Company Process and apparatus for the production of semiconductor bodies
JPH0729874B2 (ja) * 1989-11-04 1995-04-05 コマツ電子金属株式会社 多結晶シリコン製造装置の芯線間接続用ブリッジ
AU3375000A (en) * 1999-02-19 2000-09-04 Gt Equipment Technologies Inc. Method and apparatus for chemical vapor deposition of polysilicon
DE10101040A1 (de) * 2001-01-11 2002-07-25 Wacker Chemie Gmbh Vorrichtung und Verfahren zur Herstellung eines polykristallinen Siliciumstabes
US6676916B2 (en) * 2001-11-30 2004-01-13 Advanced Silicon Materials Llc Method for inducing controlled cleavage of polycrystalline silicon rod
US9683286B2 (en) * 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor
RU2503905C2 (ru) * 2008-04-14 2014-01-10 Хемлок Семикондактор Корпорейшн Производственная установка для осаждения материала и электрод для использования в ней
DE102010003064A1 (de) * 2010-03-19 2011-09-22 Wacker Chemie Ag Graphitelektrode

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4150168A (en) 1977-03-02 1979-04-17 Kabushiki Kaisha Komatsu Seisakusho Method and apparatus for manufacturing high-purity silicon rods
US4805556A (en) 1988-01-15 1989-02-21 Union Carbide Corporation Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane
US5284640A (en) 1989-12-26 1994-02-08 Advanced Silicon Materials, Inc. Graphite chuck having a hydrogen impervious outer coating layer
EP0529593A1 (en) 1991-08-29 1993-03-03 Ucar Carbon Technology Corporation A glass carbon coated graphite chuck for use in producing polycrystalline silicon

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101901356B1 (ko) 2018-03-23 2018-09-28 그린스펙(주) 열 필라멘트 화학기상증착 장치의 열 필라멘트 텐션 유지 장치

Also Published As

Publication number Publication date
CN102084028A (zh) 2011-06-01
WO2010008477A3 (en) 2010-06-03
EP2321446B1 (en) 2017-05-10
US20110203101A1 (en) 2011-08-25
CN102084028B (zh) 2014-04-16
WO2010008477A2 (en) 2010-01-21
TWI458854B (zh) 2014-11-01
EP2321446A2 (en) 2011-05-18
JP5636365B2 (ja) 2014-12-03
MY157446A (en) 2016-06-15
KR20110081934A (ko) 2011-07-15
JP2011525472A (ja) 2011-09-22
TW201009111A (en) 2010-03-01
RU2011102451A (ru) 2012-07-27
ES2636966T3 (es) 2017-10-10

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