KR101521345B1 - 글래스 기판의 제조 방법 - Google Patents
글래스 기판의 제조 방법 Download PDFInfo
- Publication number
- KR101521345B1 KR101521345B1 KR1020130099615A KR20130099615A KR101521345B1 KR 101521345 B1 KR101521345 B1 KR 101521345B1 KR 1020130099615 A KR1020130099615 A KR 1020130099615A KR 20130099615 A KR20130099615 A KR 20130099615A KR 101521345 B1 KR101521345 B1 KR 101521345B1
- Authority
- KR
- South Korea
- Prior art keywords
- glass substrate
- etching
- cleaning
- treatment
- roughened
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000011521 glass Substances 0.000 title claims abstract description 171
- 239000000758 substrate Substances 0.000 title claims abstract description 157
- 238000000034 method Methods 0.000 title claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- 238000004140 cleaning Methods 0.000 claims abstract description 79
- 238000005530 etching Methods 0.000 claims abstract description 65
- 230000008569 process Effects 0.000 claims abstract description 58
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 38
- 239000007789 gas Substances 0.000 claims description 23
- 229910052786 argon Inorganic materials 0.000 claims description 19
- 239000012159 carrier gas Substances 0.000 claims description 17
- 238000001312 dry etching Methods 0.000 claims description 17
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 7
- 239000004973 liquid crystal related substance Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 238000003754 machining Methods 0.000 claims description 5
- JRFKUVDHIAAEOU-UHFFFAOYSA-N [F-].[F-].[F-].[F-].[F-].[F-].[NH4+].[NH4+].[NH4+].[NH4+].[NH4+].[NH4+] Chemical group [F-].[F-].[F-].[F-].[F-].[F-].[NH4+].[NH4+].[NH4+].[NH4+].[NH4+].[NH4+] JRFKUVDHIAAEOU-UHFFFAOYSA-N 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 35
- 230000005611 electricity Effects 0.000 description 18
- 229910052757 nitrogen Inorganic materials 0.000 description 18
- 230000003068 static effect Effects 0.000 description 18
- 239000006060 molten glass Substances 0.000 description 14
- 239000010409 thin film Substances 0.000 description 14
- 238000007788 roughening Methods 0.000 description 10
- 238000000465 moulding Methods 0.000 description 9
- 238000003756 stirring Methods 0.000 description 9
- 229940070337 ammonium silicofluoride Drugs 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000005416 organic matter Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 238000007500 overflow downdraw method Methods 0.000 description 3
- 238000007670 refining Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000011143 downstream manufacturing Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- UYJXRRSPUVSSMN-UHFFFAOYSA-P ammonium sulfide Chemical compound [NH4+].[NH4+].[S-2] UYJXRRSPUVSSMN-UHFFFAOYSA-P 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003280 down draw process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004091 panning Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/006—Other surface treatment of glass not in the form of fibres or filaments by irradiation by plasma or corona discharge
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0075—Cleaning of glass
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Surface Treatment Of Glass (AREA)
- Drying Of Semiconductors (AREA)
- Liquid Crystal (AREA)
- Cleaning In General (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2012-189288 | 2012-08-29 | ||
| JP2012189288A JP5774562B2 (ja) | 2012-08-29 | 2012-08-29 | ガラス基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20140029214A KR20140029214A (ko) | 2014-03-10 |
| KR101521345B1 true KR101521345B1 (ko) | 2015-05-18 |
Family
ID=50607128
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020130099615A Active KR101521345B1 (ko) | 2012-08-29 | 2013-08-22 | 글래스 기판의 제조 방법 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5774562B2 (enExample) |
| KR (1) | KR101521345B1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017073580A1 (ja) * | 2015-10-29 | 2017-05-04 | 旭硝子株式会社 | ディスプレイ用ガラス基板、及びディスプレイ用ガラス基板の製造方法 |
| WO2022185557A1 (ja) * | 2021-03-05 | 2022-09-09 | ナルックス株式会社 | ガラス基板に微細凹凸表面構造を製造する方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060058672A (ko) * | 2003-09-22 | 2006-05-30 | 에아.워타 가부시키가이샤 | 난대전 유리기판의 제법과 이에 의해 얻어진 난대전유리기판 |
| KR20120023027A (ko) * | 2009-05-07 | 2012-03-12 | 니폰 덴키 가라스 가부시키가이샤 | 유리 기판 및 그 제조 방법 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4448458B2 (ja) * | 2005-02-04 | 2010-04-07 | エア・ウォーター株式会社 | 基板洗浄方法および基板洗浄装置 |
| CN102770944B (zh) * | 2010-02-25 | 2013-11-06 | 积水化学工业株式会社 | 蚀刻方法及装置 |
-
2012
- 2012-08-29 JP JP2012189288A patent/JP5774562B2/ja not_active Expired - Fee Related
-
2013
- 2013-08-22 KR KR1020130099615A patent/KR101521345B1/ko active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060058672A (ko) * | 2003-09-22 | 2006-05-30 | 에아.워타 가부시키가이샤 | 난대전 유리기판의 제법과 이에 의해 얻어진 난대전유리기판 |
| KR20120023027A (ko) * | 2009-05-07 | 2012-03-12 | 니폰 덴키 가라스 가부시키가이샤 | 유리 기판 및 그 제조 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5774562B2 (ja) | 2015-09-09 |
| KR20140029214A (ko) | 2014-03-10 |
| JP2014047086A (ja) | 2014-03-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20130822 |
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| PA0201 | Request for examination | ||
| PG1501 | Laying open of application | ||
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| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20140923 Patent event code: PE09021S01D |
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| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20150414 |
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| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20150512 Patent event code: PR07011E01D |
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| PR1002 | Payment of registration fee |
Payment date: 20150512 End annual number: 3 Start annual number: 1 |
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| PG1601 | Publication of registration | ||
| FPAY | Annual fee payment |
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