KR101515663B1 - 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치 - Google Patents
결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치 Download PDFInfo
- Publication number
- KR101515663B1 KR101515663B1 KR1020107010512A KR20107010512A KR101515663B1 KR 101515663 B1 KR101515663 B1 KR 101515663B1 KR 1020107010512 A KR1020107010512 A KR 1020107010512A KR 20107010512 A KR20107010512 A KR 20107010512A KR 101515663 B1 KR101515663 B1 KR 101515663B1
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- South Korea
- Prior art keywords
- optical system
- mirror
- imaging
- mirrors
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 167
- 238000003384 imaging method Methods 0.000 title claims abstract description 76
- 238000001393 microlithography Methods 0.000 title description 6
- 238000009434 installation Methods 0.000 title 1
- 210000001747 pupil Anatomy 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims description 26
- 238000005286 illumination Methods 0.000 claims description 17
- 230000009467 reduction Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000012937 correction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
- G02B17/0652—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors on-axis systems with at least one of the mirrors having a central aperture
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lenses (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US98278507P | 2007-10-26 | 2007-10-26 | |
| DE102007051670.5 | 2007-10-26 | ||
| DE102007051670 | 2007-10-26 | ||
| US60/982,785 | 2007-10-26 | ||
| PCT/EP2008/008381 WO2009052932A1 (en) | 2007-10-26 | 2008-10-02 | Imaging optical system and projection exposure installation for micro-lithography with an imaging optical system of this type |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020147033292A Division KR101592136B1 (ko) | 2007-10-26 | 2008-10-02 | 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20100102586A KR20100102586A (ko) | 2010-09-24 |
| KR101515663B1 true KR101515663B1 (ko) | 2015-04-27 |
Family
ID=40490434
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020147033292A Active KR101592136B1 (ko) | 2007-10-26 | 2008-10-02 | 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치 |
| KR1020107010512A Active KR101515663B1 (ko) | 2007-10-26 | 2008-10-02 | 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020147033292A Active KR101592136B1 (ko) | 2007-10-26 | 2008-10-02 | 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US8576376B2 (enExample) |
| EP (2) | EP2533104B1 (enExample) |
| JP (1) | JP5337159B2 (enExample) |
| KR (2) | KR101592136B1 (enExample) |
| CN (2) | CN102819197B (enExample) |
| DE (1) | DE102008042917A1 (enExample) |
| TW (1) | TWI391704B (enExample) |
| WO (1) | WO2009052932A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102819197B (zh) | 2007-10-26 | 2016-06-22 | 卡尔蔡司Smt有限责任公司 | 成像光学系统、投射曝光设备、微结构部件及其产生方法 |
| JP5902884B2 (ja) | 2007-10-26 | 2016-04-13 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結像光学系及びこの種の結像光学系を含むマイクロリソグラフィ用の投影露光装置 |
| DE102007051671A1 (de) | 2007-10-26 | 2009-05-07 | Carl Zeiss Smt Ag | Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik |
| DE102009046685A1 (de) | 2009-11-13 | 2011-05-26 | Carl Zeiss Smt Gmbh | Abbildende Optik |
| JP5756121B2 (ja) * | 2009-12-14 | 2015-07-29 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結像光学系 |
| DE102010001336B3 (de) | 2010-01-28 | 2011-07-28 | Carl Zeiss SMT GmbH, 73447 | Anordnung und Verfahren zur Charakterisierung der Polarisationseigenschaften eines optischen Systems |
| WO2012013241A1 (en) | 2010-07-30 | 2012-02-02 | Carl Zeiss Smt Gmbh | Imaging optical system and projection exposure installation for microlithography with an imaging optical system of this type |
| DE102010039745A1 (de) * | 2010-08-25 | 2012-03-01 | Carl Zeiss Smt Gmbh | Abbildende Optik |
| DE102010043498A1 (de) * | 2010-11-05 | 2012-05-10 | Carl Zeiss Smt Gmbh | Projektionsobjektiv einer für EUV ausgelegten mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum optischen Justieren eines Projektionsobjektives |
| DE102011076752A1 (de) | 2011-05-31 | 2012-12-06 | Carl Zeiss Smt Gmbh | Abbildende Optik |
| DE102012208793A1 (de) * | 2012-05-25 | 2013-11-28 | Carl Zeiss Smt Gmbh | Abbildende Optik sowie Projektionsbelichtungsanlage für die Projektionslithographie mit einer derartigen abbildenden Optik |
| US9448343B2 (en) * | 2013-03-15 | 2016-09-20 | Kla-Tencor Corporation | Segmented mirror apparatus for imaging and method of using the same |
| DE102014223811B4 (de) | 2014-11-21 | 2016-09-29 | Carl Zeiss Smt Gmbh | Abbildende Optik für die EUV-Projektionslithographie, Projektionsbelichtungsanlage und Verfahren zur Herstellung eines strukturierten Bauteils |
| DE102015221983A1 (de) * | 2015-11-09 | 2017-05-11 | Carl Zeiss Smt Gmbh | Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen abbildenden Optik |
| CN108152940B (zh) * | 2016-12-05 | 2021-04-27 | 佳能株式会社 | 反射折射光学系统、照明光学系统、曝光装置 |
| DE102017215664A1 (de) | 2017-09-06 | 2019-03-07 | Carl Zeiss Smt Gmbh | Optisches System für eine Projektionsbelichtungsanlage |
| US10533823B1 (en) * | 2018-10-27 | 2020-01-14 | Lewis Smith | Tension gun for firing arrows |
| JP2022096461A (ja) * | 2020-12-17 | 2022-06-29 | キヤノン株式会社 | 光学系及び面分光装置 |
| DE102024203605A1 (de) * | 2024-04-18 | 2025-10-23 | Carl Zeiss Smt Gmbh | Abbildende Optik für die Projektionslithographie |
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| US20030021026A1 (en) | 2001-07-18 | 2003-01-30 | Allan Douglas C. | Intrinsic birefringence compensation for below 200 nanometer wavelength optical lithography components with cubic crystalline structures |
| US20060232867A1 (en) | 2004-12-23 | 2006-10-19 | Hans-Jurgen Mann | Catoptric objectives and systems using catoptric objectives |
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| FR2899698A1 (fr) | 2006-04-07 | 2007-10-12 | Sagem Defense Securite | Dispositif de collecte de flux de rayonnement electromagnetique dans l'extreme ultraviolet |
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| US20080118849A1 (en) | 2006-11-21 | 2008-05-22 | Manish Chandhok | Reflective optical system for a photolithography scanner field projector |
| EP1930771A1 (en) | 2006-12-04 | 2008-06-11 | Carl Zeiss SMT AG | Projection objectives having mirror elements with reflective coatings |
| EP1950594A1 (de) * | 2007-01-17 | 2008-07-30 | Carl Zeiss SMT AG | Abbildende Optik, Projektionsbelichtunsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage, durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement sowie Verwendung einer derartigen abbildenden Optik |
| JP5902884B2 (ja) | 2007-10-26 | 2016-04-13 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結像光学系及びこの種の結像光学系を含むマイクロリソグラフィ用の投影露光装置 |
| CN102819197B (zh) * | 2007-10-26 | 2016-06-22 | 卡尔蔡司Smt有限责任公司 | 成像光学系统、投射曝光设备、微结构部件及其产生方法 |
| DE102007051671A1 (de) | 2007-10-26 | 2009-05-07 | Carl Zeiss Smt Ag | Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik |
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2008
- 2008-10-02 CN CN201210297391.9A patent/CN102819197B/zh active Active
- 2008-10-02 EP EP12171864.7A patent/EP2533104B1/en active Active
- 2008-10-02 WO PCT/EP2008/008381 patent/WO2009052932A1/en not_active Ceased
- 2008-10-02 KR KR1020147033292A patent/KR101592136B1/ko active Active
- 2008-10-02 KR KR1020107010512A patent/KR101515663B1/ko active Active
- 2008-10-02 CN CN2008801133751A patent/CN101836164B/zh active Active
- 2008-10-02 JP JP2010530298A patent/JP5337159B2/ja active Active
- 2008-10-02 EP EP20080802769 patent/EP2203787B1/en active Active
- 2008-10-16 DE DE200810042917 patent/DE102008042917A1/de not_active Withdrawn
- 2008-10-24 TW TW97140945A patent/TWI391704B/zh active
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2010
- 2010-04-26 US US12/767,521 patent/US8576376B2/en not_active Expired - Fee Related
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2013
- 2013-09-25 US US14/036,563 patent/US9152056B2/en active Active
-
2015
- 2015-09-09 US US14/849,128 patent/US20160004165A1/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030021026A1 (en) | 2001-07-18 | 2003-01-30 | Allan Douglas C. | Intrinsic birefringence compensation for below 200 nanometer wavelength optical lithography components with cubic crystalline structures |
| US20060232867A1 (en) | 2004-12-23 | 2006-10-19 | Hans-Jurgen Mann | Catoptric objectives and systems using catoptric objectives |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102819197B (zh) | 2016-06-22 |
| US20140036246A1 (en) | 2014-02-06 |
| KR101592136B1 (ko) | 2016-02-04 |
| CN101836164A (zh) | 2010-09-15 |
| KR20100102586A (ko) | 2010-09-24 |
| WO2009052932A1 (en) | 2009-04-30 |
| US20100231885A1 (en) | 2010-09-16 |
| CN101836164B (zh) | 2013-03-13 |
| DE102008042917A1 (de) | 2009-04-30 |
| KR20150006019A (ko) | 2015-01-15 |
| EP2203787A1 (en) | 2010-07-07 |
| TW200921145A (en) | 2009-05-16 |
| EP2533104B1 (en) | 2016-05-11 |
| CN102819197A (zh) | 2012-12-12 |
| EP2533104A1 (en) | 2012-12-12 |
| TWI391704B (zh) | 2013-04-01 |
| US20160004165A1 (en) | 2016-01-07 |
| US8576376B2 (en) | 2013-11-05 |
| EP2203787B1 (en) | 2014-05-14 |
| JP2011502347A (ja) | 2011-01-20 |
| US9152056B2 (en) | 2015-10-06 |
| JP5337159B2 (ja) | 2013-11-06 |
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