KR101515663B1 - 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치 - Google Patents

결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치 Download PDF

Info

Publication number
KR101515663B1
KR101515663B1 KR1020107010512A KR20107010512A KR101515663B1 KR 101515663 B1 KR101515663 B1 KR 101515663B1 KR 1020107010512 A KR1020107010512 A KR 1020107010512A KR 20107010512 A KR20107010512 A KR 20107010512A KR 101515663 B1 KR101515663 B1 KR 101515663B1
Authority
KR
South Korea
Prior art keywords
optical system
mirror
imaging
mirrors
field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020107010512A
Other languages
English (en)
Korean (ko)
Other versions
KR20100102586A (ko
Inventor
한스-위르겐 만
Original Assignee
칼 짜이스 에스엠티 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 칼 짜이스 에스엠티 게엠베하 filed Critical 칼 짜이스 에스엠티 게엠베하
Publication of KR20100102586A publication Critical patent/KR20100102586A/ko
Application granted granted Critical
Publication of KR101515663B1 publication Critical patent/KR101515663B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0652—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors on-axis systems with at least one of the mirrors having a central aperture
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • H10P76/00—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020107010512A 2007-10-26 2008-10-02 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치 Active KR101515663B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US98278507P 2007-10-26 2007-10-26
DE102007051670.5 2007-10-26
US60/982,785 2007-10-26
DE102007051670 2007-10-26
PCT/EP2008/008381 WO2009052932A1 (en) 2007-10-26 2008-10-02 Imaging optical system and projection exposure installation for micro-lithography with an imaging optical system of this type

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020147033292A Division KR101592136B1 (ko) 2007-10-26 2008-10-02 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치

Publications (2)

Publication Number Publication Date
KR20100102586A KR20100102586A (ko) 2010-09-24
KR101515663B1 true KR101515663B1 (ko) 2015-04-27

Family

ID=40490434

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020107010512A Active KR101515663B1 (ko) 2007-10-26 2008-10-02 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치
KR1020147033292A Active KR101592136B1 (ko) 2007-10-26 2008-10-02 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020147033292A Active KR101592136B1 (ko) 2007-10-26 2008-10-02 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치

Country Status (8)

Country Link
US (3) US8576376B2 (enExample)
EP (2) EP2203787B1 (enExample)
JP (1) JP5337159B2 (enExample)
KR (2) KR101515663B1 (enExample)
CN (2) CN101836164B (enExample)
DE (1) DE102008042917A1 (enExample)
TW (1) TWI391704B (enExample)
WO (1) WO2009052932A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007051671A1 (de) 2007-10-26 2009-05-07 Carl Zeiss Smt Ag Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik
KR101542272B1 (ko) 2007-10-26 2015-08-06 칼 짜이스 에스엠티 게엠베하 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 구비하는 마이크로리소그래피용 투영 노광 장치
CN101836164B (zh) 2007-10-26 2013-03-13 卡尔蔡司Smt有限责任公司 成像光学系统和具有该类型的成像光学系统的微光刻投射曝光设备
DE102009046685A1 (de) 2009-11-13 2011-05-26 Carl Zeiss Smt Gmbh Abbildende Optik
CN105511065B (zh) 2009-12-14 2019-04-23 卡尔蔡司Smt有限责任公司 照明光学部件、照明系统、投射曝光设备及组件制造方法
DE102010001336B3 (de) 2010-01-28 2011-07-28 Carl Zeiss SMT GmbH, 73447 Anordnung und Verfahren zur Charakterisierung der Polarisationseigenschaften eines optischen Systems
EP2598931B1 (en) * 2010-07-30 2020-12-02 Carl Zeiss SMT GmbH Imaging optical system and projection exposure installation for microlithography with an imaging optical system of this type
DE102010039745A1 (de) * 2010-08-25 2012-03-01 Carl Zeiss Smt Gmbh Abbildende Optik
DE102010043498A1 (de) * 2010-11-05 2012-05-10 Carl Zeiss Smt Gmbh Projektionsobjektiv einer für EUV ausgelegten mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum optischen Justieren eines Projektionsobjektives
DE102011076752A1 (de) 2011-05-31 2012-12-06 Carl Zeiss Smt Gmbh Abbildende Optik
DE102012208793A1 (de) * 2012-05-25 2013-11-28 Carl Zeiss Smt Gmbh Abbildende Optik sowie Projektionsbelichtungsanlage für die Projektionslithographie mit einer derartigen abbildenden Optik
US9448343B2 (en) * 2013-03-15 2016-09-20 Kla-Tencor Corporation Segmented mirror apparatus for imaging and method of using the same
DE102014223811B4 (de) 2014-11-21 2016-09-29 Carl Zeiss Smt Gmbh Abbildende Optik für die EUV-Projektionslithographie, Projektionsbelichtungsanlage und Verfahren zur Herstellung eines strukturierten Bauteils
DE102015221983A1 (de) 2015-11-09 2017-05-11 Carl Zeiss Smt Gmbh Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen abbildenden Optik
CN108152940B (zh) * 2016-12-05 2021-04-27 佳能株式会社 反射折射光学系统、照明光学系统、曝光装置
DE102017215664A1 (de) 2017-09-06 2019-03-07 Carl Zeiss Smt Gmbh Optisches System für eine Projektionsbelichtungsanlage
US10533823B1 (en) * 2018-10-27 2020-01-14 Lewis Smith Tension gun for firing arrows
JP2022096461A (ja) * 2020-12-17 2022-06-29 キヤノン株式会社 光学系及び面分光装置
DE102024203605A1 (de) * 2024-04-18 2025-10-23 Carl Zeiss Smt Gmbh Abbildende Optik für die Projektionslithographie

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030021026A1 (en) 2001-07-18 2003-01-30 Allan Douglas C. Intrinsic birefringence compensation for below 200 nanometer wavelength optical lithography components with cubic crystalline structures
US20060232867A1 (en) 2004-12-23 2006-10-19 Hans-Jurgen Mann Catoptric objectives and systems using catoptric objectives

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR890004881B1 (ko) * 1983-10-19 1989-11-30 가부시기가이샤 히다찌세이사꾸쇼 플라즈마 처리 방법 및 그 장치
US4804258A (en) 1986-05-05 1989-02-14 Hughes Aircraft Company Four mirror afocal wide field of view optical system
GB2197962A (en) 1986-11-10 1988-06-02 Compact Spindle Bearing Corp Catoptric reduction imaging apparatus
IL113789A (en) 1994-05-23 1999-01-26 Hughes Aircraft Co A non-focusing device with three hinged mirrors and a corrective mirror
US5473263A (en) 1994-12-19 1995-12-05 Advanced Micro Devices, Inc. Negative feedback to reduce voltage oscillation in CMOS output buffers
JPH09213618A (ja) * 1996-01-31 1997-08-15 Canon Inc 投影露光装置及びそれを用いたデバイスの製造方法
US5737137A (en) * 1996-04-01 1998-04-07 The Regents Of The University Of California Critical illumination condenser for x-ray lithography
US7186983B2 (en) * 1998-05-05 2007-03-06 Carl Zeiss Smt Ag Illumination system particularly for microlithography
US7151592B2 (en) * 1999-02-15 2006-12-19 Carl Zeiss Smt Ag Projection system for EUV lithography
US6600552B2 (en) * 1999-02-15 2003-07-29 Carl-Zeiss Smt Ag Microlithography reduction objective and projection exposure apparatus
EP1035445B1 (de) * 1999-02-15 2007-01-31 Carl Zeiss SMT AG Mikrolithographie-Reduktionsobjektiveinrichtung sowie Projektionsbelichtungsanlage
US6985210B2 (en) * 1999-02-15 2006-01-10 Carl Zeiss Smt Ag Projection system for EUV lithography
US6033079A (en) * 1999-03-15 2000-03-07 Hudyma; Russell High numerical aperture ring field projection system for extreme ultraviolet lithography
JP2001185480A (ja) * 1999-10-15 2001-07-06 Nikon Corp 投影光学系及び該光学系を備える投影露光装置
EP1093021A3 (en) 1999-10-15 2004-06-30 Nikon Corporation Projection optical system as well as equipment and methods making use of said system
JP4143236B2 (ja) 1999-10-15 2008-09-03 キヤノン株式会社 画像形成装置
US6867913B2 (en) * 2000-02-14 2005-03-15 Carl Zeiss Smt Ag 6-mirror microlithography projection objective
JP2002107630A (ja) 2000-08-01 2002-04-10 Carl Zeiss Stiftung Trading As Carl Zeiss ６枚の反射鏡を用いたマイクロリソグラフィ用の投影光学系
DE10052289A1 (de) * 2000-10-20 2002-04-25 Zeiss Carl 8-Spiegel-Mikrolithographie-Projektionsobjektiv
DE10139177A1 (de) * 2001-08-16 2003-02-27 Zeiss Carl Objektiv mit Pupillenobskuration
JPWO2003025173A1 (ja) * 2001-09-17 2004-12-24 武 今西 Ｃ型肝炎ウイルスに対する新規なアンチセンスオリゴヌクレオチド誘導体
JP2004022945A (ja) * 2002-06-19 2004-01-22 Canon Inc 露光装置及び方法
JP2004158786A (ja) 2002-11-08 2004-06-03 Canon Inc 投影光学系及び露光装置
JP3938040B2 (ja) * 2002-12-27 2007-06-27 キヤノン株式会社 反射型投影光学系、露光装置及びデバイス製造方法
JP2004252358A (ja) 2003-02-21 2004-09-09 Canon Inc 反射型投影光学系及び露光装置
JP2004252363A (ja) * 2003-02-21 2004-09-09 Canon Inc 反射型投影光学系
JP2005057154A (ja) * 2003-08-07 2005-03-03 Canon Inc 露光装置
TWI311691B (en) * 2003-10-30 2009-07-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1697798A2 (en) 2003-12-15 2006-09-06 Carl Zeiss SMT AG Projection objective having a high aperture and a planar end surface
JP2005189247A (ja) * 2003-12-24 2005-07-14 Nikon Corp 投影光学系および該投影光学系を備えた露光装置
WO2005098504A1 (en) 2004-04-08 2005-10-20 Carl Zeiss Smt Ag Imaging system with mirror group
DE602004017235D1 (de) 2004-12-15 2008-11-27 Europ Agence Spatiale Sserachsenspiegeln
EP1828829B1 (de) 2004-12-23 2012-08-22 Carl Zeiss SMT GmbH Hochaperturiges objektiv mit obskurierter pupille
JP2008533709A (ja) * 2005-03-08 2008-08-21 カール ツァイス エスエムテー アーゲー 取扱い可能な絞り又は開口絞りを備えたマイクロリソグラフィー投影光学系
JP4918542B2 (ja) 2005-05-13 2012-04-18 カール・ツァイス・エスエムティー・ゲーエムベーハー ６枚の反射鏡を備えたｅｕｖ投影光学系
FR2899698A1 (fr) * 2006-04-07 2007-10-12 Sagem Defense Securite Dispositif de collecte de flux de rayonnement electromagnetique dans l'extreme ultraviolet
DE102006017336B4 (de) 2006-04-11 2011-07-28 Carl Zeiss SMT GmbH, 73447 Beleuchtungssystem mit Zoomobjektiv
US20080118849A1 (en) 2006-11-21 2008-05-22 Manish Chandhok Reflective optical system for a photolithography scanner field projector
EP1930771A1 (en) 2006-12-04 2008-06-11 Carl Zeiss SMT AG Projection objectives having mirror elements with reflective coatings
EP1950594A1 (de) * 2007-01-17 2008-07-30 Carl Zeiss SMT AG Abbildende Optik, Projektionsbelichtunsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage, durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement sowie Verwendung einer derartigen abbildenden Optik
KR101542272B1 (ko) 2007-10-26 2015-08-06 칼 짜이스 에스엠티 게엠베하 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 구비하는 마이크로리소그래피용 투영 노광 장치
DE102007051671A1 (de) 2007-10-26 2009-05-07 Carl Zeiss Smt Ag Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik
CN101836164B (zh) * 2007-10-26 2013-03-13 卡尔蔡司Smt有限责任公司 成像光学系统和具有该类型的成像光学系统的微光刻投射曝光设备

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030021026A1 (en) 2001-07-18 2003-01-30 Allan Douglas C. Intrinsic birefringence compensation for below 200 nanometer wavelength optical lithography components with cubic crystalline structures
US20060232867A1 (en) 2004-12-23 2006-10-19 Hans-Jurgen Mann Catoptric objectives and systems using catoptric objectives

Also Published As

Publication number Publication date
CN101836164B (zh) 2013-03-13
TWI391704B (zh) 2013-04-01
EP2533104A1 (en) 2012-12-12
EP2203787B1 (en) 2014-05-14
TW200921145A (en) 2009-05-16
EP2533104B1 (en) 2016-05-11
DE102008042917A1 (de) 2009-04-30
US20140036246A1 (en) 2014-02-06
JP2011502347A (ja) 2011-01-20
US8576376B2 (en) 2013-11-05
KR101592136B1 (ko) 2016-02-04
EP2203787A1 (en) 2010-07-07
KR20100102586A (ko) 2010-09-24
WO2009052932A1 (en) 2009-04-30
US9152056B2 (en) 2015-10-06
CN102819197A (zh) 2012-12-12
CN101836164A (zh) 2010-09-15
JP5337159B2 (ja) 2013-11-06
KR20150006019A (ko) 2015-01-15
US20160004165A1 (en) 2016-01-07
US20100231885A1 (en) 2010-09-16
CN102819197B (zh) 2016-06-22

Similar Documents

Publication Publication Date Title
KR101515663B1 (ko) 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치
KR101542272B1 (ko) 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 구비하는 마이크로리소그래피용 투영 노광 장치
US6710917B2 (en) 8-mirror microlithography projection objective
US7372624B2 (en) 8-mirror microlithography projection objective
KR101593243B1 (ko) 결상 광학 시스템 및 투영 노광 장치
KR101388330B1 (ko) 이미징 광학기기 및 이러한 유형의 이미징 광학기기를 갖는 마이크로리소그래피용 투영 노광 설비
JP4918542B2 (ja) ６枚の反射鏡を備えたｅｕｖ投影光学系
KR101158159B1 (ko) 줌 대물렌즈를 구비한 조명 시스템
US10928733B2 (en) Illumination optic for projection lithography
US8558991B2 (en) Imaging optical system and related installation and method
US9933710B2 (en) Projection exposure method and projection exposure apparatus
KR102631210B1 (ko) Euv 투영 리소그래피용 패싯 미러 및 이러한 패싯 미러를 포함하는 조명 광학 유닛
CN102378935B (zh) 成像光学部件以及具有此类型的成像光学部件的用于微光刻的投射曝光装置
JP2000252208A (ja) 均一走査エネルギー生成用の視野ミラーを備えた照明システム
KR20110059721A (ko) 적어도 두 작동 상태를 가지는 마이크로리소그래피 투영 노광 장치
KR20140043732A (ko) 이미징 광학 유닛

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20100513

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20130912

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20140526

Patent event code: PE09021S01D

A107 Divisional application of patent
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20141126

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20150326

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20150421

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20150421

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20180413

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20190411

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20190411

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20200409

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20210408

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20220407

Start annual number: 8

End annual number: 8