KR101510383B1 - high-performance group 3 nitride-based semiconductor light emitting diodes and methods to fabricate them - Google Patents
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- KR101510383B1 KR101510383B1 KR20080032406A KR20080032406A KR101510383B1 KR 101510383 B1 KR101510383 B1 KR 101510383B1 KR 20080032406 A KR20080032406 A KR 20080032406A KR 20080032406 A KR20080032406 A KR 20080032406A KR 101510383 B1 KR101510383 B1 KR 101510383B1
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Abstract
The present invention relates to a Group III nitride-based semiconductor light-emitting device, which is characterized in that it includes an ohmic contact current spreading layer including an electrically conductive thin film structure on an upper portion of a upper nitride- A diode device and a method of manufacturing the same are provided.
In other words, the present invention is characterized in that the ohmic contact current spreading layer including the electrically conductive thin film structure is a p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y < / = 1) layer, a surface irregularity process is introduced, or a functional thin film layer is provided to effectively improve the overall performance of the light emitting diode device including the driving voltage and external light emitting efficiency.
A group III nitride based semiconductor, an electrically conductive thin film structure, an ohmic contact current spreading layer, a bonding heterogeneous material layer, a functional thin film layer, a light emitting structure, a laser lift off, a chemical wet etching, a positive polarity surface,
Description
The present invention relates to a group III nitride-based semiconductor light emitting diode (OLED) device capable of improving the overall performance of a light emitting diode device including a driving voltage and an external light emitting efficiency, and a method of manufacturing the same.
When a forward current of a certain magnitude is applied to a light emitting diode (LED) device, current is converted into light in the active layer in the solid state light emitting structure to generate light. The earliest LED element research and development forms a compound semiconductor such as indium phosphide (InP), gallium arsenide (GaAs), and gallium phosphorus (GaP) in a p-i-n junction structure. The LED emits light in a visible light region of a wavelength longer than the wavelength of green light, but in recent years, due to the research and development of a group III nitride single crystal semiconductor, elements emitting blue and ultraviolet light are also commercially available Device, a light source device, and an environmental application device. Further, it is possible to combine three LED device chips of red, green, and blue, or to add a phosphor to a short wavelength pumping LED device LEDs for white light source that emits white light by grafting have been developed and the application range thereof has been extended to illumination devices. In particular, LED devices using solid single crystal semiconductors have a high efficiency of converting electrical energy into light energy, have a long life span of 5 years or more on average, and are capable of significantly reducing energy consumption and maintenance costs. It is attracting attention.
Since a light-emitting diode (hereinafter referred to as a group III nitride-based semiconductor light-emitting diode) device made of a Group III nitride-based semiconductor is generally grown on an insulating growth substrate (typically, sapphire) 5 group compound semiconductor light emitting diode device, two electrodes opposite to the opposite surfaces of the growth substrate can not be provided, so that the two electrodes of the LED device must be formed on the crystal-grown single crystal semiconductor. A conventional structure of such a group III nitride-based semiconductor light-emitting diode device is schematically illustrated in FIG.
1, a group III nitride-based semiconductor light-emitting diode device includes a
As described above, since the
In particular, since the upper nitride-based
The ohmic contact
As described above, in order to obtain a high-brightness light-emitting diode device through a high light transmittance of the ohmic contact
More recently, U.S. patent US20070001186 discloses a method of bonding a thick transparent electrically conductive material wafer including ZnO to an upper portion of a p-type In x Al y Ga 1-xy N semiconductor by a wafer bonding process to form an ohmic contact current spreading layer 50) was formed. However, the transparent electroconductive material present in the form of such a thick wafer is not easy to have an excellent electrical conductivity of less than 10 < -3 > OMEGA cm, and the wafer bonding due to the difference in thermal expansion coefficient It is not suitable for practical use because it is difficult and expensive to manufacture wafers.
Therefore, in the art, it is necessary to maintain a high light transmittance and to provide a high-quality (high-quality) clad layer which forms a good ohmic contact interface with the p-type In x Al y Ga 1-
In addition, for use in a wide range of industrial applications of LED devices and as a white light source for illumination, a group III nitride-based semiconductor light-emitting diode device grown and manufactured on top of a
Generally, the problem of ESD prevention and heat emission, which is seriously occurring in a group III-V compound semiconductor light-emitting diode device grown and formed on the
In order to solve the above problems, the present invention provides a nitride-based cladding layer of a p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y≤1) and having an ohmic contact current spreading layer containing the electroconductive thin film structure having an electrical resistance of less than 10 -3 Ω㎝ on top of the layer, the ohmic contact current spreading layer directly above a part of the soup A p-type electrode pad is formed on the Schottky contact interface to reduce current spreading, low driving voltage, and leaky current in the horizontal direction when the LED device is driven, And an object of the present invention is to improve the overall performance of the semiconductor light-emitting diode device.
As a further object of the present invention, there is provided a method for manufacturing a p-type nitride-based clad layer, which comprises the steps of: introducing surface texture to a surface of an ohmic contact current spreading layer including an electrically conductive thin film structure formed on the p- And to improve the overall performance of the LED device including the efficiency.
As a further object of the present invention, there is provided a method of manufacturing a p-type cladding layer, comprising the steps of: forming a p-type cladding layer on a p-type cladding layer; forming an ohmic contact current spreading layer on the p- And to improve the overall performance of the LED device including the light extraction efficiency by forming a functional thin film layer on the upper side.
In order to accomplish the object of the present invention successfully, formation of an ohmic contact current spreading layer including an electrically conductive thin film structure on a p-type nitride-based clad layer existing in the uppermost layer of the light emitting structure for a light emitting diode device, It is preferable to perform this process by a direct wafer bonding process.
In order to accomplish the object of the present invention successfully, formation of an ohmic contact current spreading layer including an electrically conductive thin film structure on a p-type nitride-based clad layer existing in the uppermost layer of the light emitting structure for another light- An indirect wafer bonding process involves interposing a layer of a heterogeneous material for transparency bonding between the p-type nitride-based clad layer and the electrically conductive thin film structure.
The present invention provides, as a constituent means for achieving the above-mentioned object, a semiconductor device comprising a group III nitride-based semiconductor represented by the formula In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) (Hereinafter referred to as a group III nitride-based semiconductor light-emitting diode) element,
Preparing a growth substrate for growing a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device;
A lower nitride-based clad layer formed on the growth substrate and made of an n-type conductive group III nitride-based semiconductor; a nitride-based active layer formed on a partial region of the lower nitride-based clad layer and a p- Growing a top nitride-based clad layer made of a semiconductor to complete a light-emitting structure for a light-emitting diode device;
Preparing a support substrate for growing the electroconductive thin film structure;
Forming an electroconductive thin film structure on the supporting substrate and having an electric resistance of 10 < -3 > OMEGA cm or less;
Forming a composite structure by directly bonding the upper nitride-based clad layer on the growth substrate and the electroconductive thin film structure on the support substrate at a predetermined pressure and temperature by direct wafer bonding;
Separating the support substrate from the wafer bonded composite structure;
Forming a p-type electrode pad on a shallow contact interface formed in a part of the upper part of the electrically conductive thin film structure exposed to the atmosphere; And
And forming an n-type ohmic contact electrode and an electrode pad on a part of the upper portion of the lower nitride-based clad layer.
The electrically conductive thin film structure located above the upper nitride-based clad layer forms an ohmic contact interface, and serves as an ohmic contact current spreading layer that facilitates current injection and current spreading.
Further, the electroconductive thin film structure serving as the ohmic contact current spreading layer may have a superlattice structure (not shown) in addition to a single layer formed of n-type semiconductors or conductors in which electrons act as majority carriers, And the like can be formed in a multi-layer structure.
Further, the electrically conductive thin film structure serving as the ohmic contact current spreading layer may have a superlattice structure (not shown) in addition to a p-type semiconductive or conductive single layer in which holes function as a majority carrier, And the like can be formed in a multi-layer structure.
Further, the surface of the electroconductive thin film structure serving as the ohmic contact current spreading layer is not only a cubic crystal surface but also a positive polarity hexagonal crystal surface having a metallic surface, a negative polarity hexagonal surface having a negative polarity which is a nitrogen surface and a mixed polarity hexagonal surface having a polarity mixed with the two polarities.
Further, the electroconductive thin film structure serving as the ohmic contact current spreading layer may have a poly-crystal structure or an amorphous structure in addition to the epitaxial structure.
Furthermore, a transparent conducting thin film structure may be formed on the surface of the electroconductive thin film structure serving as the ohmic contact current spreading layer by using a transparent conducting luminescent material, an anti-reflective material, a functional thin film layer such as a light filtering material may be further laminated.
Further, the surface irregularity process can be introduced to the surface of the electroconductive thin film structure serving as the ohmic contact current spreading layer.
The present invention provides, as still another constituent means for achieving the above-mentioned object, a group III nitride-based semiconductor represented by the formula In x Al y Ga 1-xy N (0? X, 0? Y, x + (Hereinafter referred to as a group III nitride-based semiconductor light-emitting diode) element using a horizontal structure,
Preparing a growth substrate for growing a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device;
A lower nitride-based clad layer formed on the growth substrate and made of an n-type conductive group III nitride-based semiconductor; a nitride-based active layer formed on a partial region of the lower nitride-based clad layer and a p- Growing a top nitride-based clad layer made of a semiconductor to complete a light-emitting structure for a light-emitting diode device;
Preparing a support substrate for growing the electroconductive thin film structure;
Forming an electroconductive thin film structure on the supporting substrate and having an electric resistance of 10 < -3 > OMEGA cm or less;
The upper nitride-based clad layer on the growth substrate and the electroconductive thin film structure on the support substrate are indirectly bonded to each other by indirect wafer bonding at a predetermined pressure and temperature through a layer of a heterogeneous material for transparent bonding, Forming a structure;
Separating the support substrate from the wafer bonded composite structure;
Forming a p-type electrode pad at a shallow contact interface formed in a part of the upper portion of the electrically conductive thin film structure exposed to the atmosphere; And
And forming an n-type ohmic contact electrode and an electrode pad on a part of the upper portion of the lower nitride-based clad layer.
The transparent bonding different-material layer forms an ohmic contact interface with the upper nitride-based clad layer, and is strongly bonded to the electrically conductive thin film structure.
The electrically conductive thin film structure including the transparent bonding different material layer located on the upper nitride-based clad layer serves as an ohmic contact current spreading layer for facilitating current injection and current spreading.
Further, the electroconductive thin film structure serving as the ohmic contact current spreading layer may have a superlattice structure (not shown) in addition to a single layer formed of n-type semiconductors or conductors in which electrons act as majority carriers, And the like can be formed in a multi-layer structure.
Further, the electrically conductive thin film structure serving as the ohmic contact current spreading layer may have a superlattice structure (not shown) in addition to a p-type semiconductive or conductive single layer in which holes function as a majority carrier, And the like can be formed in a multi-layer structure.
Further, the surface of the electroconductive thin film structure serving as the ohmic contact current spreading layer is not only a cubic crystal surface but also a positive polarity hexagonal crystal surface having a metallic surface, a negative polarity hexagonal surface having a negative polarity which is a nitrogen surface and a mixed polarity hexagonal surface having a polarity mixed with the two polarities.
Further, the electroconductive thin film structure serving as the ohmic contact current spreading layer may have a poly-crystal structure or an amorphous structure in addition to the epitaxial structure.
Furthermore, a transparent conducting thin film structure may be formed on the surface of the electroconductive thin film structure serving as the ohmic contact current spreading layer by using a transparent conducting luminescent material, an anti-reflective material, a functional thin film layer such as a light filtering material may be further laminated.
Further, the surface irregularity process can be introduced to the surface of the electroconductive thin film structure serving as the ohmic contact current spreading layer.
As described above, the present invention relates to a group III nitride-based semiconductor optoelectronic device (light emitting diode), wherein the p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + A good ohmic contact interface between the upper nitride-based clad layer as the semiconductor and the ohmic contact current spreading layer formed by the wafer bonding process can be formed to improve the light transmittance characteristics of the LED device, As a result of using the ohmic contact current spreading layer, there is an excellent effect of improving the brightness of the LED element.
In addition, unlike the prior art, in a group III nitride-based semiconductor light-emitting diode device having a high-performance ohmic contact current spreading layer formed by a wafer-to-wafer bonding process, surface irregularities can easily be formed by wet or dry etching, The light scattering back into the structure of the light emitting structure for an LED device can be minimized, thereby improving the overall luminance characteristic of the LED device.
Hereinafter, a group III nitride-based semiconductor light emitting diode device manufactured according to the present invention will be described in detail with reference to the accompanying drawings.
2 is a cross-sectional view of an electroconductive thin film structure for wafer bonding formed on a supporting substrate according to the present invention.
Referring to FIG. 2A, an electrically conductive
More specifically, it is preferable to form the non-polar surface tetragonal system, the positive polarity surface hexagonal system, the negative polarity surface hexagonal system, or the mixed polar surface hexagonal system of the single crystal on the
It is preferable that the electroconductive
2B, before the electrically conductive
The
3 is a cross-sectional view of a composite structure in which a light emitting structure for a group III nitride-based light emitting diode device and an electrically conductive thin film structure according to the present invention are combined by a direct wafer bonding process.
3A, which is a light emitting structure for a group III nitride-based semiconductor light-emitting diode device, includes a
The upper nitride-based
FIG. 3B is a cross-sectional view of an electrically conductive
3C is a cross-sectional view of the upper nitride-based
Above all, in addition to the strong mechanical bonding force between the upper nitride-based
4 is a cross-sectional view of a composite structure in which a light emitting structure for a group III nitride-based light emitting diode device and an electrically conductive thin film structure according to the present invention are combined by a direct wafer bonding process.
4A, which is a light emitting structure for a group III nitride-based semiconductor light emitting diode device generally known in the art, includes a
The upper nitride-based
FIG. 4B is a cross-sectional view of an electrically conductive
FIG. 4C is a cross-sectional view of the upper nitride-based
Above all, in addition to the strong mechanical bonding force between the upper nitride-based
5 is a cross-sectional view of a composite structure in which a light emitting structure for a group III nitride-based light emitting diode device and an electrically conductive thin film structure according to the present invention are combined by an indirect wafer bonding process.
5A, which is a light emitting structure for a group III nitride-based semiconductor light-emitting diode device generally known in the art, includes a
The upper nitride-based
5B is a cross-sectional view of an electrically conductive
5C is a cross-sectional view of a hetero-
For example, ITO, ZnO, IZO (indium zinc oxide), ZITO (zinc indium tin oxide), In2O3, SnO2, Sn, and the like can be used as the transparent
FIG. 5D is a cross-sectional view of the upper nitride-based
Further, in order to form the ohmic contact interface in the vertical direction as described above, the upper nitride-based
6 is a cross-sectional view of a composite structure in which a light emitting structure for a group III nitride-based light emitting diode device and an electrically conductive thin film structure according to the present invention are combined by an indirect wafer bonding process.
6A, which is a light emitting structure for a group III nitride-based semiconductor light-emitting diode device generally known in the art, includes a
The upper nitride-based
6B is a cross-sectional view of an electrically conductive
6C is a cross-sectional view of a
For example, ITO, ZnO, IZO (indium zinc oxide), ZITO (zinc indium tin oxide), In2O3, SnO2, Sn, and the like can be used as the transparent
FIG. 6D is a graph showing the relationship between the transparency of the upper nitride-based
Further, in order to form the ohmic contact interface in the vertical direction as described above, the upper nitride-based
7 is a cross-sectional view illustrating a process of lifting a supporting substrate from an electrically conductive thin film structure in a wafer-coupled composite structure according to the present invention.
7A is an example of a composite structure in which the light-emitting structure for the group III nitride-based semiconductor light-emitting diode device and the group III nitride-based conductive thin-
7B is a cross-sectional view of a composite structure in which the
7C is a cross-sectional view of the composite structure in which the
The process of separating the
8 is a plan view showing a state in which an electroconductive thin film structure according to the present invention is formed on a top layer of a light emitting structure for a light emitting diode element by wafer bonding.
8A, an electrically conductive
8B, an electrically conductive
Further, although not shown in the present invention, the light-emitting structure for the group III nitride-based semiconductor light-emitting diode device and the electrically conductive
FIG. 9 is a flowchart illustrating a process of manufacturing a group III nitride-based LED device according to an embodiment of the present invention.
Referring to this flowchart, a step 141 of growing a light emitting structure for a group III nitride-based semiconductor light-emitting diode device into a single crystal on a grown substrate by a well-known MOCVD or MBE growth process, A
Above all, although it is desirable to form the transparent conductor of an electrical conductor having an electrical resistance of 10 < -3 > OMEGA cm or less at a high carrier concentration and mobility in the 142 step process, Amorphous with low resistance is also possible. The electroconductive thin film structure satisfies only the characteristics of electric resistance, transparency, single crystal, polycrystalline or amorphous of 10 < -3 > OMEGA cm or less.
Further, in the process step 143, the upper nitride-based
It is also important in
In the process step 145, a surface irregularity process, a functional thin film layer formation, a dry-etching process, and an etching process are performed on the electrically conductive
In the step 146, the completed LED chip is completed on the wafer.
In the manufacturing process of the group III nitride-based semiconductor light-emitting diode device, the process sequence may be modified to improve the overall performance of the LED device. In particular, in the LED manufacturing process according to the present invention, various known or technically- Treatment processes can be introduced.
10 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device as a first embodiment manufactured by the present invention.
10, a lower nitride-based
10A shows an ohmic contact current spreading
An n-type ohmic contact electrode and an
The shape of the structure according to the partial region removal process can be changed into various shapes according to the position, electrode shape and size of the electrode. For example, the upper nitride-based
11 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device as a second embodiment manufactured by the present invention.
11, a lower nitride-based
11A shows the ohmic contact current spreading
An n-type ohmic contact electrode and an
The shape of the structure according to the removal process of the partial region may be changed into various shapes depending on the position to be formed, the shape and size of the electrode. For example, the upper nitride-based
12 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device as a third embodiment manufactured by the present invention.
12, a lower nitride-based
12A is a schematic cross-sectional view of the ohmic contact current spreading
An n-type ohmic contact electrode and an
The shape of the structure according to the partial region removal process can be changed into various shapes according to the position, electrode shape and size of the electrode. For example, the upper nitride-based
13 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device as a fourth embodiment manufactured by the present invention.
Referring to FIG. 13, a lower nitride-based
13A is a plan view of the ohmic contact current spreading
An n-type ohmic contact electrode and an
The shape of the structure according to the partial region removal process can be changed into various shapes according to the position, electrode shape and size of the electrode. For example, the upper nitride-based
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Accordingly, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concept of the present invention defined in the following claims are also within the scope of the present invention.
FIG. 1 is a cross-sectional view showing a typical example of a conventional Group III nitride-based semiconductor light-emitting diode device,
2 is a cross-sectional view of an electroconductive thin film structure for wafer bonding formed on a supporting substrate according to the present invention,
3 is a cross-sectional view of a composite structure in which a light emitting structure for a group III nitride-based light emitting diode device and an electrically conductive thin film structure according to the present invention are combined by a direct wafer bonding process,
4 is a cross-sectional view of a composite structure in which a light emitting structure for a group III nitride-based light emitting diode device and an electrically conductive thin film structure according to the present invention are combined by a direct wafer bonding process,
5 is a cross-sectional view of a composite structure in which a light emitting structure for a group III nitride-based light emitting diode device and an electrically conductive thin film structure according to the present invention are combined by an indirect wafer bonding process,
6 is a cross-sectional view of a composite structure in which a light emitting structure for a group III nitride-based light emitting diode device and an electrically conductive thin film structure according to the present invention are combined by an indirect wafer bonding process,
FIG. 7 is a cross-sectional view illustrating a process of lifting off a supporting substrate from an electrically conductive thin film structure in a wafer-bonded composite structure according to the present invention,
8 is a plan view showing a state in which the electroconductive thin film structure according to the present invention is formed on a top layer of a light emitting structure for a light emitting diode element by wafer bonding,
9 is a flowchart illustrating a process of manufacturing a group III nitride-based semiconductor light-emitting diode device according to an embodiment of the present invention,
10 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device as a first embodiment manufactured by the present invention,
11 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device as a second embodiment manufactured by the present invention,
12 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device as a third embodiment manufactured by the present invention,
13 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device as a fourth embodiment manufactured by the present invention.
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KR20080032406A KR101510383B1 (en) | 2008-04-08 | 2008-04-08 | high-performance group 3 nitride-based semiconductor light emitting diodes and methods to fabricate them |
US12/936,800 US20110147786A1 (en) | 2008-04-08 | 2009-04-08 | Light-emitting device and manufacturing method thereof |
PCT/KR2009/001824 WO2009125983A2 (en) | 2008-04-08 | 2009-04-08 | Light-emitting device and manufacturing method thereof |
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KR19990037429A (en) * | 1997-10-27 | 1999-05-25 | 모리시타 요이찌 | Light emitting diode device and manufacturing method thereof |
KR20040073307A (en) * | 2003-02-12 | 2004-08-19 | 로무 가부시키가이샤 | Semiconductor light emitting device |
KR20070099076A (en) * | 2006-04-03 | 2007-10-09 | 오인모 | Fabrication of group 3 nitride-based light emitting device through high-performance ohmic contact electrode body |
JP2007266571A (en) * | 2006-02-28 | 2007-10-11 | Mitsubishi Cable Ind Ltd | Led chip, its manufacturing method, and light emitting device |
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Publication number | Priority date | Publication date | Assignee | Title |
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KR19990037429A (en) * | 1997-10-27 | 1999-05-25 | 모리시타 요이찌 | Light emitting diode device and manufacturing method thereof |
KR20040073307A (en) * | 2003-02-12 | 2004-08-19 | 로무 가부시키가이샤 | Semiconductor light emitting device |
JP2007266571A (en) * | 2006-02-28 | 2007-10-11 | Mitsubishi Cable Ind Ltd | Led chip, its manufacturing method, and light emitting device |
KR20070099076A (en) * | 2006-04-03 | 2007-10-09 | 오인모 | Fabrication of group 3 nitride-based light emitting device through high-performance ohmic contact electrode body |
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