KR101510383B1 - high-performance group 3 nitride-based semiconductor light emitting diodes and methods to fabricate them - Google Patents

high-performance group 3 nitride-based semiconductor light emitting diodes and methods to fabricate them Download PDF

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KR101510383B1
KR101510383B1 KR20080032406A KR20080032406A KR101510383B1 KR 101510383 B1 KR101510383 B1 KR 101510383B1 KR 20080032406 A KR20080032406 A KR 20080032406A KR 20080032406 A KR20080032406 A KR 20080032406A KR 101510383 B1 KR101510383 B1 KR 101510383B1
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nitride
layer
thin film
group iii
iii nitride
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KR20080032406A
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KR20090107096A (en
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송준오
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엘지이노텍 주식회사
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Priority to US12/936,800 priority patent/US20110147786A1/en
Priority to PCT/KR2009/001824 priority patent/WO2009125983A2/en
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Abstract

The present invention relates to a Group III nitride-based semiconductor light-emitting device, which is characterized in that it includes an ohmic contact current spreading layer including an electrically conductive thin film structure on an upper portion of a upper nitride- A diode device and a method of manufacturing the same are provided.

In other words, the present invention is characterized in that the ohmic contact current spreading layer including the electrically conductive thin film structure is a p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y < / = 1) layer, a surface irregularity process is introduced, or a functional thin film layer is provided to effectively improve the overall performance of the light emitting diode device including the driving voltage and external light emitting efficiency.

A group III nitride based semiconductor, an electrically conductive thin film structure, an ohmic contact current spreading layer, a bonding heterogeneous material layer, a functional thin film layer, a light emitting structure, a laser lift off, a chemical wet etching, a positive polarity surface,

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a high-performance group III nitride-based semiconductor light-emitting diode device and a method of manufacturing the same,

The present invention relates to a group III nitride-based semiconductor light emitting diode (OLED) device capable of improving the overall performance of a light emitting diode device including a driving voltage and an external light emitting efficiency, and a method of manufacturing the same.

When a forward current of a certain magnitude is applied to a light emitting diode (LED) device, current is converted into light in the active layer in the solid state light emitting structure to generate light. The earliest LED element research and development forms a compound semiconductor such as indium phosphide (InP), gallium arsenide (GaAs), and gallium phosphorus (GaP) in a p-i-n junction structure. The LED emits light in a visible light region of a wavelength longer than the wavelength of green light, but in recent years, due to the research and development of a group III nitride single crystal semiconductor, elements emitting blue and ultraviolet light are also commercially available Device, a light source device, and an environmental application device. Further, it is possible to combine three LED device chips of red, green, and blue, or to add a phosphor to a short wavelength pumping LED device LEDs for white light source that emits white light by grafting have been developed and the application range thereof has been extended to illumination devices. In particular, LED devices using solid single crystal semiconductors have a high efficiency of converting electrical energy into light energy, have a long life span of 5 years or more on average, and are capable of significantly reducing energy consumption and maintenance costs. It is attracting attention.

Since a light-emitting diode (hereinafter referred to as a group III nitride-based semiconductor light-emitting diode) device made of a Group III nitride-based semiconductor is generally grown on an insulating growth substrate (typically, sapphire) 5 group compound semiconductor light emitting diode device, two electrodes opposite to the opposite surfaces of the growth substrate can not be provided, so that the two electrodes of the LED device must be formed on the crystal-grown single crystal semiconductor. A conventional structure of such a group III nitride-based semiconductor light-emitting diode device is schematically illustrated in FIG.

1, a group III nitride-based semiconductor light-emitting diode device includes a sapphire growth substrate 10 and a lower nitride-based clad layer 20 formed of an n-type conductive semiconductor material sequentially grown on the growth substrate 10 ), A nitride-based active layer 30, and a top nitride-based clad layer 40 made of a p-type conductive semiconductor material. The lower nitride-based cladding layer 20 is formed of an n-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) (0? x, 0? y, x + y? 1) layer 202 having a different composition from the -xy N layer 201, and the nitride- (30) is an un-doped nitride based In x Al y Ga 1-xy N (0? X, 0? Y, x + y 1). ≪ / RTI > The upper nitride-based cladding layer 40 includes a p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) (0? X, 0? Y, x + y? 1) layer 402 having a composition different from that of the Ga 1-xy N layer 401. In general, the lower nitride-based cladding layer / nitride-based active layer / upper nitride-based cladding layers 20, 30, and 40 formed of the Group III nitride-based semiconductor single crystal may be grown using an apparatus such as MOCVD or MBE. At this time, in order to improve the lattice matching with the sapphire growth substrate 10 before the n-type In x Al y Ga 1-xy N layer 201 of the lower nitride-based cladding layer 20 is grown, AlN or GaN The same buffer layer (not shown) may be formed therebetween.

As described above, since the sapphire growth substrate 10 is an electrically insulating material, both of the electrodes of the LED device must be formed on the same upper part of the single crystal semiconductor growth direction. For this purpose, the upper nitride-based clad layer 40 and the nitride- The active layer 30 is partially etched to expose a portion of the upper portion of the lower nitride-based cladding layer 20 and the upper portion of the exposed n-type In x Al y Ga 1-xy N layer 20 An n-type ohmic contact electrode and an electrode pad 70 are formed.

In particular, since the upper nitride-based clad layer 40 has a relatively high sheet resistance due to a low carrier concentration and mobility, a high-quality ohmic contact layer is formed before forming the p- There is a need for additional materials capable of forming a contact current spreading layer. On the other hand, in the US Pat. No. 5,563,422, on the top of a p-type In x Al y Ga 1-xy N layer 402 located on the uppermost layer of the light emitting structure for a group III nitride-based semiconductor light emitting diode device, a p- , A material composed of Ni / Au is proposed to form an ohmic contact current spreading layer 50 which forms an ohmic contact interface with a low contact resistance in the vertical direction.

The ohmic contact current spreading layer 50 can improve the current spreading in the horizontal direction with respect to the p-type In x Al y Ga 1-xy N layer 402 and at the same time provide a low noncontact resistance in the vertical direction An ohmic interface is formed to effectively perform current injection, thereby improving the electrical characteristics of the light emitting diode device. However, the ohmic contact current spreading layer 50 made of Ni / Au shows a low transmittance of 70% on average even after the heat treatment, and this low light transmittance is lowered when the light generated from the light emitting diode device is discharged to the outside Thereby absorbing positive light, thereby reducing the total external light emitting efficiency.

As described above, in order to obtain a high-brightness light-emitting diode device through a high light transmittance of the ohmic contact current spreading layer 50, an ohmic contact current formed by various opaque metals or alloys including the Ni / A transparent conductive material such as indium tin oxide (ITO) or zinc oxide (ZnO), which is known to have an average transmittance of 90% or more, has been proposed instead of the spreading layer 50. However, the above-mentioned transparent electroconductive material has a smaller work function (4.7 to 6.1 eV) than the p-type In x Al y Ga 1-xy N crystal (7.5 eV or more) and a p-type In x Al y Ga 1-xy N Layer 402 directly and after the subsequent process including heat treatment forms a schottky contact interface that is not an ohmic contact interface but a large noncontact resistance so that a new transparent conductive material or fabrication process Is required.

More recently, U.S. patent US20070001186 discloses a method of bonding a thick transparent electrically conductive material wafer including ZnO to an upper portion of a p-type In x Al y Ga 1-xy N semiconductor by a wafer bonding process to form an ohmic contact current spreading layer 50) was formed. However, the transparent electroconductive material present in the form of such a thick wafer is not easy to have an excellent electrical conductivity of less than 10 < -3 > OMEGA cm, and the wafer bonding due to the difference in thermal expansion coefficient It is not suitable for practical use because it is difficult and expensive to manufacture wafers.

Therefore, in the art, it is necessary to maintain a high light transmittance and to provide a high-quality (high-quality) clad layer which forms a good ohmic contact interface with the p-type In x Al y Ga 1-xy N layer 40 which is the uppermost layer of the upper nitride- Quality group III nitride semiconductor light-emitting diode device having an ohmic contact current spreading layer 50 and a method of manufacturing the same.

In addition, for use in a wide range of industrial applications of LED devices and as a white light source for illumination, a group III nitride-based semiconductor light-emitting diode device grown and manufactured on top of a sapphire growth substrate 10 having electrical and thermal- When a current in a reverse direction is applied, a large amount of leaky current is generated and the LED element is frequently damaged completely (static electricity). Therefore, in order to improve the reliability of the LED device manufactured on the sapphire substrate 10, the leakage current and the electrostatic discharge (ESD) phenomenon must be improved. In addition to this, heat generated during driving of the LED device must be reduced as much as possible, and a technique capable of smoothly discharging the generated heat to the outside is also required.

Generally, the problem of ESD prevention and heat emission, which is seriously occurring in a group III-V compound semiconductor light-emitting diode device grown and formed on the sapphire growth substrate 10, is closely related to electrical and optical characteristics . In order to solve the above-mentioned problem in the group III nitride-based semiconductor light-emitting diode device, the upper nitride-based clad layer (or the upper nitride- A method of forming a high quality ohmic contact current spreading layer 50 on the p-type In x Al y Ga 1-xy N layer which is a p-type In x Al y Ga 1-xy N layer has been continuously on the rise.

In order to solve the above problems, the present invention provides a nitride-based cladding layer of a p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + y≤1) and having an ohmic contact current spreading layer containing the electroconductive thin film structure having an electrical resistance of less than 10 -3 Ω㎝ on top of the layer, the ohmic contact current spreading layer directly above a part of the soup A p-type electrode pad is formed on the Schottky contact interface to reduce current spreading, low driving voltage, and leaky current in the horizontal direction when the LED device is driven, And an object of the present invention is to improve the overall performance of the semiconductor light-emitting diode device.

As a further object of the present invention, there is provided a method for manufacturing a p-type nitride-based clad layer, which comprises the steps of: introducing surface texture to a surface of an ohmic contact current spreading layer including an electrically conductive thin film structure formed on the p- And to improve the overall performance of the LED device including the efficiency.

As a further object of the present invention, there is provided a method of manufacturing a p-type cladding layer, comprising the steps of: forming a p-type cladding layer on a p-type cladding layer; forming an ohmic contact current spreading layer on the p- And to improve the overall performance of the LED device including the light extraction efficiency by forming a functional thin film layer on the upper side.

In order to accomplish the object of the present invention successfully, formation of an ohmic contact current spreading layer including an electrically conductive thin film structure on a p-type nitride-based clad layer existing in the uppermost layer of the light emitting structure for a light emitting diode device, It is preferable to perform this process by a direct wafer bonding process.

In order to accomplish the object of the present invention successfully, formation of an ohmic contact current spreading layer including an electrically conductive thin film structure on a p-type nitride-based clad layer existing in the uppermost layer of the light emitting structure for another light- An indirect wafer bonding process involves interposing a layer of a heterogeneous material for transparency bonding between the p-type nitride-based clad layer and the electrically conductive thin film structure.

The present invention provides, as a constituent means for achieving the above-mentioned object, a semiconductor device comprising a group III nitride-based semiconductor represented by the formula In x Al y Ga 1-xy N (0? X, 0? Y, x + y? 1) (Hereinafter referred to as a group III nitride-based semiconductor light-emitting diode) element,

Preparing a growth substrate for growing a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device;

A lower nitride-based clad layer formed on the growth substrate and made of an n-type conductive group III nitride-based semiconductor; a nitride-based active layer formed on a partial region of the lower nitride-based clad layer and a p- Growing a top nitride-based clad layer made of a semiconductor to complete a light-emitting structure for a light-emitting diode device;

Preparing a support substrate for growing the electroconductive thin film structure;

Forming an electroconductive thin film structure on the supporting substrate and having an electric resistance of 10 < -3 > OMEGA cm or less;

Forming a composite structure by directly bonding the upper nitride-based clad layer on the growth substrate and the electroconductive thin film structure on the support substrate at a predetermined pressure and temperature by direct wafer bonding;

Separating the support substrate from the wafer bonded composite structure;

Forming a p-type electrode pad on a shallow contact interface formed in a part of the upper part of the electrically conductive thin film structure exposed to the atmosphere; And

And forming an n-type ohmic contact electrode and an electrode pad on a part of the upper portion of the lower nitride-based clad layer.

The electrically conductive thin film structure located above the upper nitride-based clad layer forms an ohmic contact interface, and serves as an ohmic contact current spreading layer that facilitates current injection and current spreading.

Further, the electroconductive thin film structure serving as the ohmic contact current spreading layer may have a superlattice structure (not shown) in addition to a single layer formed of n-type semiconductors or conductors in which electrons act as majority carriers, And the like can be formed in a multi-layer structure.

Further, the electrically conductive thin film structure serving as the ohmic contact current spreading layer may have a superlattice structure (not shown) in addition to a p-type semiconductive or conductive single layer in which holes function as a majority carrier, And the like can be formed in a multi-layer structure.

Further, the surface of the electroconductive thin film structure serving as the ohmic contact current spreading layer is not only a cubic crystal surface but also a positive polarity hexagonal crystal surface having a metallic surface, a negative polarity hexagonal surface having a negative polarity which is a nitrogen surface and a mixed polarity hexagonal surface having a polarity mixed with the two polarities.

Further, the electroconductive thin film structure serving as the ohmic contact current spreading layer may have a poly-crystal structure or an amorphous structure in addition to the epitaxial structure.

Furthermore, a transparent conducting thin film structure may be formed on the surface of the electroconductive thin film structure serving as the ohmic contact current spreading layer by using a transparent conducting luminescent material, an anti-reflective material, a functional thin film layer such as a light filtering material may be further laminated.

Further, the surface irregularity process can be introduced to the surface of the electroconductive thin film structure serving as the ohmic contact current spreading layer.

The present invention provides, as still another constituent means for achieving the above-mentioned object, a group III nitride-based semiconductor represented by the formula In x Al y Ga 1-xy N (0? X, 0? Y, x + (Hereinafter referred to as a group III nitride-based semiconductor light-emitting diode) element using a horizontal structure,

Preparing a growth substrate for growing a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device;

A lower nitride-based clad layer formed on the growth substrate and made of an n-type conductive group III nitride-based semiconductor; a nitride-based active layer formed on a partial region of the lower nitride-based clad layer and a p- Growing a top nitride-based clad layer made of a semiconductor to complete a light-emitting structure for a light-emitting diode device;

Preparing a support substrate for growing the electroconductive thin film structure;

Forming an electroconductive thin film structure on the supporting substrate and having an electric resistance of 10 < -3 > OMEGA cm or less;

The upper nitride-based clad layer on the growth substrate and the electroconductive thin film structure on the support substrate are indirectly bonded to each other by indirect wafer bonding at a predetermined pressure and temperature through a layer of a heterogeneous material for transparent bonding, Forming a structure;

Separating the support substrate from the wafer bonded composite structure;

Forming a p-type electrode pad at a shallow contact interface formed in a part of the upper portion of the electrically conductive thin film structure exposed to the atmosphere; And

And forming an n-type ohmic contact electrode and an electrode pad on a part of the upper portion of the lower nitride-based clad layer.

The transparent bonding different-material layer forms an ohmic contact interface with the upper nitride-based clad layer, and is strongly bonded to the electrically conductive thin film structure.

The electrically conductive thin film structure including the transparent bonding different material layer located on the upper nitride-based clad layer serves as an ohmic contact current spreading layer for facilitating current injection and current spreading.

Further, the electroconductive thin film structure serving as the ohmic contact current spreading layer may have a superlattice structure (not shown) in addition to a single layer formed of n-type semiconductors or conductors in which electrons act as majority carriers, And the like can be formed in a multi-layer structure.

Further, the electrically conductive thin film structure serving as the ohmic contact current spreading layer may have a superlattice structure (not shown) in addition to a p-type semiconductive or conductive single layer in which holes function as a majority carrier, And the like can be formed in a multi-layer structure.

Further, the surface of the electroconductive thin film structure serving as the ohmic contact current spreading layer is not only a cubic crystal surface but also a positive polarity hexagonal crystal surface having a metallic surface, a negative polarity hexagonal surface having a negative polarity which is a nitrogen surface and a mixed polarity hexagonal surface having a polarity mixed with the two polarities.

Further, the electroconductive thin film structure serving as the ohmic contact current spreading layer may have a poly-crystal structure or an amorphous structure in addition to the epitaxial structure.

Furthermore, a transparent conducting thin film structure may be formed on the surface of the electroconductive thin film structure serving as the ohmic contact current spreading layer by using a transparent conducting luminescent material, an anti-reflective material, a functional thin film layer such as a light filtering material may be further laminated.

Further, the surface irregularity process can be introduced to the surface of the electroconductive thin film structure serving as the ohmic contact current spreading layer.

As described above, the present invention relates to a group III nitride-based semiconductor optoelectronic device (light emitting diode), wherein the p-type In x Al y Ga 1-xy N (0? X, 0? Y, x + A good ohmic contact interface between the upper nitride-based clad layer as the semiconductor and the ohmic contact current spreading layer formed by the wafer bonding process can be formed to improve the light transmittance characteristics of the LED device, As a result of using the ohmic contact current spreading layer, there is an excellent effect of improving the brightness of the LED element.

In addition, unlike the prior art, in a group III nitride-based semiconductor light-emitting diode device having a high-performance ohmic contact current spreading layer formed by a wafer-to-wafer bonding process, surface irregularities can easily be formed by wet or dry etching, The light scattering back into the structure of the light emitting structure for an LED device can be minimized, thereby improving the overall luminance characteristic of the LED device.

Hereinafter, a group III nitride-based semiconductor light emitting diode device manufactured according to the present invention will be described in detail with reference to the accompanying drawings.

2 is a cross-sectional view of an electroconductive thin film structure for wafer bonding formed on a supporting substrate according to the present invention.

Referring to FIG. 2A, an electrically conductive thin film structure 90 having an electrical resistance of 10 -3 ? Cm or less is formed in a single layer or a multi-layer structure on a support substrate 80.

More specifically, it is preferable to form the non-polar surface tetragonal system, the positive polarity surface hexagonal system, the negative polarity surface hexagonal system, or the mixed polar surface hexagonal system of the single crystal on the support substrate 80, poly-crystal or amorphous electrically conductive thin film structure 90 is also possible.

It is preferable that the electroconductive thin film structure 90 has excellent electrical conductivity or semiconducting property irrespective of the electron or hole charge, which is a majority carrier.

2B, before the electrically conductive thin film structure 90 having an electrical resistance of 10 -3 ? Cm or less according to the present invention is formed directly on the support substrate 80, the electrically conductive thin film A sacrificial layer 100 composed of materials beneficial for chemical and chemical lift-off (CLO) or laser lift-off (LLO) . The sacrificial layer 100 may be formed of a metal such as Al, Au, Ag, Ti, In, Sn, Zn, Cr, Pd, Pt, Ni, Mo, W, CrN, TiN, ZnO, In2O3, SnO2, SiO2, RuO2, IrO2, SiNx, group 3-5 compounds, and group 2-6 compounds.

The support substrate 80 can be used without limitation as long as it is a substrate material on which the electroconductive thin film structure 90 can be laminated. In particular, the support substrate 80 can be formed of a material such as sapphire, silicon (Si), low mann (Ge) (SiGe), silicon carbide (SiC), group 2-6 compounds, glass, group 3-5 compounds, metal, Or an alloy may be preferentially used.

3 is a cross-sectional view of a composite structure in which a light emitting structure for a group III nitride-based light emitting diode device and an electrically conductive thin film structure according to the present invention are combined by a direct wafer bonding process.

3A, which is a light emitting structure for a group III nitride-based semiconductor light-emitting diode device, includes a sakefire growth substrate 10 for growing a Group III nitride-based single crystal semiconductor, A lower nitride-based clad layer 20 made of an n-type conductive group-III nitride-based single crystal semiconductor material sequentially formed on the upper portion, a group III nitride-based active layer 30, a p-type conductive group III nitride- And a top nitride-based clad layer 40 made of a semiconductor material. The lower nitride-based clad layer 20 may be formed of an n-type GaN layer and an n-type AlGaN layer. The nitride-based active layer 30 may be a multi-quantum well undoped InGaN Layer. The upper nitride-based clad layer 40 may be composed of a p-type GaN layer and a p-type AlGaN layer. Prior to growing the light emitting structure 20, 30, or 40 for a light emitting diode element formed of the Group III nitride single crystal semiconductor layer described above, stacking is performed using well-known processes such as MOCVD or MBE single crystal growth. At this time, a buffer layer 110 such as AlN or GaN is formed on the sapphire growth substrate 10 in order to improve lattice match between the lower nitride-based clad layer 20 and the sapphire growth substrate 10 It is preferable to further form the film.

The upper nitride-based clad layer 40 may separately include an interface modification layer. The surface modification layer may be formed of a superlattice structure, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type conductive InGaN, AlInN, InN, AlGaN, polar surface of the group III nitride system. In particular, the surface modification layer of the superlattice structure is composed of nitride or carbon nitride containing Group 2, Group 3, or Group 4 element components.

FIG. 3B is a cross-sectional view of an electrically conductive thin film structure 90 for wafer bonding for the ohmic contact current spreading layer formed on the upper nitride-based cladding layer 40 on the support substrate 80, The same material and structure.

3C is a cross-sectional view of the upper nitride-based clad layer 40, which is the uppermost layer of the light-emitting structure for the group III nitride-based semiconductor light-emitting diode device, and the electroconductive thin film structure 90 formed on the support substrate 80, And a direct wafer bonding at a temperature of 900 ° C or lower.

Above all, in addition to the strong mechanical bonding force between the upper nitride-based clad layer 40 and the electroconductive thin film structure 90 at the time of wafer bonding, it is possible to form an ohmic contact interface having a low noncontact resistance in the vertical direction desirable. Further, in order to form the ohmic contact interface as described above, the upper nitride-based clad layer 40 or the electroconductive thin film structure 90 is heated in a suitable temperature and gas atmosphere before the wafer bonding process (fore-process) It is possible to perform annealing and solution treatment or surface treatment including plasma and at the same time to introduce the above annealing or surface treatment process even after wafer bonding .

4 is a cross-sectional view of a composite structure in which a light emitting structure for a group III nitride-based light emitting diode device and an electrically conductive thin film structure according to the present invention are combined by a direct wafer bonding process.

4A, which is a light emitting structure for a group III nitride-based semiconductor light emitting diode device generally known in the art, includes a sapphire growth substrate 10 for growing a Group III nitride-based single crystal semiconductor, Type nitride-based single crystal semiconductor material, a group III nitride-based active layer 30, and a p-type conductive group III nitride-based single crystal semiconductor Based cladding layer 40 made of a material. The lower nitride-based clad layer 20 may be formed of an n-type GaN layer and an n-type AlGaN layer. The nitride-based active layer 30 may be a multi-quantum well undoped InGaN Layer. The upper nitride-based clad layer 40 may be composed of a p-type GaN layer and a p-type AlGaN layer. Prior to growing the light emitting structure 20, 30, or 40 for a light emitting diode element formed of the Group III nitride single crystal semiconductor layer described above, stacking is performed using well-known processes such as MOCVD or MBE single crystal growth. At this time, a buffer layer 110 such as AlN or GaN is formed on the sapphire growth substrate 10 in order to improve lattice match between the lower nitride-based clad layer 20 and the sapphire growth substrate 10 It is preferable to further form the film.

The upper nitride-based clad layer 40 may separately include an interface modification layer. The surface modification layer may be formed of a superlattice structure, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type conductive InGaN, AlInN, InN, AlGaN, polar surface of the group III nitride system. In particular, the surface modification layer of the superlattice structure is composed of nitride or carbon nitride containing Group 2, Group 3, or Group 4 element components.

FIG. 4B is a cross-sectional view of an electrically conductive thin film structure 90 for wafer bonding for an ohmic contact current spreading layer formed on the upper nitride-based cladding layer 40 on the support substrate 80, The same material and structure.

FIG. 4C is a cross-sectional view of the upper nitride-based clad layer 40 of the group III nitride-based semiconductor light-emitting diode composite structure and the electroconductive thin film structure 90 formed on the support substrate 80 at a predetermined hydrostatic pressure, And a direct wafer bonding at a temperature of 900 ° C or lower.

Above all, in addition to the strong mechanical bonding force between the upper nitride-based clad layer 40 and the electroconductive thin film structure 90 at the time of wafer bonding, it is possible to form an ohmic contact interface having a low noncontact resistance in the vertical direction desirable. Further, in order to form the ohmic contact interface as described above, the upper nitride-based clad layer 40 or the electroconductive thin film structure 90 is heated in a suitable temperature and gas atmosphere before the wafer bonding process (fore-process) It is possible to perform annealing and solution treatment or surface treatment including plasma and at the same time to introduce the above annealing or surface treatment process even after wafer bonding .

5 is a cross-sectional view of a composite structure in which a light emitting structure for a group III nitride-based light emitting diode device and an electrically conductive thin film structure according to the present invention are combined by an indirect wafer bonding process.

5A, which is a light emitting structure for a group III nitride-based semiconductor light-emitting diode device generally known in the art, includes a sapphire growth substrate 10 for growing a Group III nitride-based single crystal semiconductor, Type nitride-based single crystal semiconductor material, a group III nitride-based active layer 30, and a p-type conductive group III nitride-based single crystal semiconductor Based cladding layer 40 made of a material. The lower nitride-based clad layer 20 may be formed of an n-type GaN layer and an n-type AlGaN layer. The nitride-based active layer 30 may be a multi-quantum well undoped InGaN Layer. The upper nitride-based clad layer 40 may be composed of a p-type GaN layer and a p-type AlGaN layer. Prior to growing the light emitting structure 20, 30, or 40 for a light emitting diode element formed of the Group III nitride single crystal semiconductor layer described above, stacking is performed using well-known processes such as MOCVD or MBE single crystal growth. At this time, a buffer layer 110 such as AlN or GaN is formed on the sapphire growth substrate 10 in order to improve lattice match between the lower nitride-based clad layer 20 and the sapphire growth substrate 10 It is preferable to further form the film.

The upper nitride-based clad layer 40 may separately include an interface modification layer. The surface modification layer may be formed of a superlattice structure, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type conductive InGaN, AlInN, InN, AlGaN, polar surface of the group III nitride system. In particular, the surface modification layer of the superlattice structure is composed of nitride or carbon nitride containing Group 2, Group 3, or Group 4 element components.

5B is a cross-sectional view of an electrically conductive thin film structure 90 for wafer bonding for an ohmic contact current spreading layer formed on the upper nitride-based cladding layer 40 on the support substrate 80, The same material and structure.

5C is a cross-sectional view of a hetero-material layer 120 for transparent bonding introduced between the upper nitride-based cladding layer 40 and the electroconductive thin film structure 90, which is the uppermost layer of the light-emitting structure for the group III nitride- to be. Further, the transparent bonding different-material layer 120 enhances the mechanical bonding force between the two material layers 40 and 90 and at the same time forms an ohmic contact interface with a low contact resistance with the upper nitride- Materials which are advantageous and have high light transmittance are preferred.

For example, ITO, ZnO, IZO (indium zinc oxide), ZITO (zinc indium tin oxide), In2O3, SnO2, Sn, and the like can be used as the transparent binding material layer 120. [ Or a multi-layer structure of Zn, In, Ni, Au, Ru, Ir, NiO, Ag, Pt, Pd, PdO, IrO2, RuO2, Ti, TiN, Can be used.

FIG. 5D is a cross-sectional view of the upper nitride-based clad layer 40 and the electroconductive thin film structure 90, which are the uppermost layers of the light-emitting structure for the group III nitride- Sectional view showing a complex structure formed by indirect wafer bonding at a predetermined hydrostatic pressure and a temperature of 900 ° C or less by introducing a layer 120 for bonding a transparent bonding material.

Further, in order to form the ohmic contact interface in the vertical direction as described above, the upper nitride-based clad layer 40 or the electrically conductive thin film structure 90 is heated to a proper temperature and gas annealing or surface treatment such as a solution or a plasma can be performed in a gas atmosphere after annealing or surface treatment in a post- May be introduced.

6 is a cross-sectional view of a composite structure in which a light emitting structure for a group III nitride-based light emitting diode device and an electrically conductive thin film structure according to the present invention are combined by an indirect wafer bonding process.

6A, which is a light emitting structure for a group III nitride-based semiconductor light-emitting diode device generally known in the art, includes a sapphire growth substrate 10 for growing a Group III nitride-based single crystal semiconductor, Type nitride-based single crystal semiconductor material, a group III nitride-based active layer 30, and a p-type conductive group III nitride-based single crystal semiconductor Based cladding layer 40 made of a material. The lower nitride-based clad layer 20 may be formed of an n-type GaN layer and an n-type AlGaN layer. The nitride-based active layer 30 may be a multi-quantum well undoped InGaN Layer. The upper nitride-based clad layer 40 may be composed of a p-type GaN layer and a p-type AlGaN layer. Prior to growing the light emitting structure 20, 30, or 40 for a light emitting diode element formed of the Group III nitride single crystal semiconductor layer described above, stacking is performed using well-known processes such as MOCVD or MBE single crystal growth. At this time, a buffer layer 110 such as AlN or GaN is formed on the sapphire growth substrate 10 in order to improve lattice match between the lower nitride-based clad layer 20 and the sapphire growth substrate 10 It is preferable to further form the film.

The upper nitride-based clad layer 40 may separately include an interface modification layer. The surface modification layer may be formed of a superlattice structure, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type conductive InGaN, AlInN, InN, AlGaN, polar surface of the group III nitride system. In particular, the surface modification layer of the superlattice structure is composed of nitride or carbon nitride containing Group 2, Group 3, or Group 4 element components.

6B is a cross-sectional view of an electrically conductive thin film structure 90 for wafer bonding for an ohmic contact current spreading layer formed on the upper nitride-based cladding layer 40 on the support substrate 80, The same material and structure.

6C is a cross-sectional view of a layer 120 for transparent bonding introduced between the upper nitride-based clad layer 40 and the electroconductive thin film structure 90, which is the uppermost layer of the light-emitting structure for the group III nitride- to be. Further, the transparent bonding different-material layer 120 enhances the mechanical bonding force between the two material layers 40 and 90 and at the same time forms an ohmic contact interface with a low contact resistance with the upper nitride- Materials which are advantageous and have high light transmittance are preferred.

For example, ITO, ZnO, IZO (indium zinc oxide), ZITO (zinc indium tin oxide), In2O3, SnO2, Sn, and the like can be used as the transparent binding material layer 120. [ Or a multi-layer structure of Zn, In, Ni, Au, Ru, Ir, NiO, Ag, Pt, Pd, PdO, IrO2, RuO2, Ti, TiN, Can be used.

FIG. 6D is a graph showing the relationship between the transparency of the upper nitride-based clad layer 40 and the electroconductive thin film structure 90, which is the uppermost layer of the light-emitting structure for the group III nitride-based semiconductor light-emitting diode device, Sectional view showing a composite structure formed by indirect wafer bonding at a predetermined hydrostatic pressure and a temperature of 900 ° C or less by introducing the bonding-different material layer 120. FIG.

Further, in order to form the ohmic contact interface in the vertical direction as described above, the upper nitride-based clad layer 40 or the electrically conductive thin film structure 90 is heated to a proper temperature and gas annealing or surface treatment such as a solution or a plasma can be performed in a gas atmosphere after annealing or surface treatment in a post- May be introduced.

7 is a cross-sectional view illustrating a process of lifting a supporting substrate from an electrically conductive thin film structure in a wafer-coupled composite structure according to the present invention.

7A is an example of a composite structure in which the light-emitting structure for the group III nitride-based semiconductor light-emitting diode device and the group III nitride-based conductive thin-film structure 90 are directly wafer-bonded, and has the same structure and material as those shown in FIG. 3C .

7B is a cross-sectional view of a composite structure in which the support substrate 80 is separated using chemical wet-off (CLO), chemical-mechanical polishing (CMP) Sectional view of the structure.

7C is a cross-sectional view of the composite structure in which the support substrate 80 is separated using a laser lift-off (LLO) process in the wafer bonded composite structure.

The process of separating the support substrate 80 from the wafer bonded composite structure may select at least one of the CLO, CMP, or LLO processes depending on the characteristics of the support substrate.

8 is a plan view showing a state in which an electroconductive thin film structure according to the present invention is formed on a top layer of a light emitting structure for a light emitting diode element by wafer bonding.

8A, an electrically conductive thin film structure 90 is wafer bonded to a total area of the wafer on top of the upper nitride-based clad layer 40, which is the uppermost layer of the light-emitting structure for the group III nitride-based semiconductor light-emitting diode device .

8B, an electrically conductive thin film structure 90 is formed on top of the upper nitride-based clad layer 40, which is the uppermost layer of the light-emitting structure for the group III nitride-based semiconductor light-emitting diode device, in a predetermined shape and size etching. Preferably, the etched predetermined shape and dimensions are the same as the light emitting surface in a single LED device.

Further, although not shown in the present invention, the light-emitting structure for the group III nitride-based semiconductor light-emitting diode device and the electrically conductive thin film structure 90 are simultaneously subjected to a general photolithography process (That is, etching) using a mask, and then align the aligned wafers. In particular, it is preferable that the etching dimension of the light-emitting structure for the group III nitride-based semiconductor light-emitting diode device is made larger than the etching dimension of the electroconductive thin film structure 90 at this time.

FIG. 9 is a flowchart illustrating a process of manufacturing a group III nitride-based LED device according to an embodiment of the present invention.

Referring to this flowchart, a step 141 of growing a light emitting structure for a group III nitride-based semiconductor light-emitting diode device into a single crystal on a grown substrate by a well-known MOCVD or MBE growth process, A process step 142 of depositing an electroconductive thin film structure for wafer bonding for a current spreading layer, a wafer bonding process step 143 for bonding a wafer to wafer, A group III nitride-based semiconductor light-emitting diode device fabricating process step 145 using an etching or vapor deposition process, and finally, unifying and packaging the LED device chip fabricated on the growth substrate, The process step 146 is completed.

Above all, although it is desirable to form the transparent conductor of an electrical conductor having an electrical resistance of 10 < -3 > OMEGA cm or less at a high carrier concentration and mobility in the 142 step process, Amorphous with low resistance is also possible. The electroconductive thin film structure satisfies only the characteristics of electric resistance, transparency, single crystal, polycrystalline or amorphous of 10 < -3 > OMEGA cm or less.

Further, in the process step 143, the upper nitride-based clad layer 40 and the electrically conductive thin-film structure 90, which are present on the uppermost portion of the light-emitting structure for the LED element, 40) and the binding dissimilar material layer 120 should be preceded by the formation of an ohmic contact interface.

It is also important in step 144 to separate the support substrate 80 from the light emitting structure for the LED element and the bonded electroconductive thin film structure 90 without mechanical, electrical, and optical damage.

In the process step 145, a surface irregularity process, a functional thin film layer formation, a dry-etching process, and an etching process are performed on the electrically conductive thin film structure 90 for emitting the light generated in the nitride-based active layer of the light- , an n-type ohmic contact electrode and an electrode pad, and a p-type electrode pad at a shallow contact interface.

In the step 146, the completed LED chip is completed on the wafer.

In the manufacturing process of the group III nitride-based semiconductor light-emitting diode device, the process sequence may be modified to improve the overall performance of the LED device. In particular, in the LED manufacturing process according to the present invention, various known or technically- Treatment processes can be introduced.

10 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device as a first embodiment manufactured by the present invention.

10, a lower nitride-based clad layer 20 made of an n-type conductive Group III nitride-based semiconductor including a buffering layer is formed on a growth substrate 10 basically, and the lower nitride Based active cladding layer 40 composed of a nitride-based active layer 30 and a p-type conductive group III nitride-based semiconductor is formed in a part of the upper part of the cladding layer 20. Also, although not shown in FIG. 10, the upper nitride-based clad layer 40 may separately include an interface modification layer. The surface modification layer may be formed of a superlattice structure, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type conductive InGaN, AlInN, InN, AlGaN, polar surface of the group III nitride system. In particular, the surface modification layer of the superlattice structure is composed of nitride or carbon nitride containing Group 2, Group 3, or Group 4 element components. The light emitting structure for the light emitting diode may be formed by MOCVD or MBE.

10A shows an ohmic contact current spreading layer 90 formed on the upper nitride-based cladding layer 40 by a direct wafer bonding process and formed as an electrically conductive thin film structure alone, while FIG. 10B shows a layer 120 which are formed by indirect wafer bonding with the ohmic contact current spreading layer 90.

An n-type ohmic contact electrode and an electrode pad 70 are formed on a part of the lower nitride-based clad layer 20 exposed to the atmosphere, and an ohmic contact current spreading layer 90 composed of the electrically conductive thin film structure, A p-type electrode pad 60 forming a shock-resistant contact interface is formed in a part of the upper part.

The shape of the structure according to the partial region removal process can be changed into various shapes according to the position, electrode shape and size of the electrode. For example, the upper nitride-based clad layer 40 and the nitride-based active layer 30 may be removed in a region in contact with one edge as in the present embodiment. In order to disperse the current density, The removed region may extend in correspondence with the corresponding electrode.

11 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device as a second embodiment manufactured by the present invention.

11, a lower nitride-based clad layer 20 composed of an n-type conductive Group III nitride-based semiconductor including a buffering layer is formed on a growth substrate 10 basically, Based active cladding layer 40 composed of a nitride-based active layer 30 and a p-type conductive group III nitride-based semiconductor is formed in a part of the upper part of the cladding layer 20. Also, although not shown in FIG. 11, the upper nitride-based clad layer 40 may separately include an interface modification layer. The surface modification layer may be formed of a superlattice structure, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type conductive InGaN, AlInN, InN, AlGaN, polar surface of the group III nitride system. In particular, the surface modification layer of the superlattice structure is composed of nitride or carbon nitride containing Group 2, Group 3, or Group 4 element components. The light emitting structure for the light emitting diode may be formed by MOCVD or MBE.

11A shows the ohmic contact current spreading layer 90 and the functional thin film layer 130 formed on the upper nitride-based clad layer 40 alone by the direct wafer bonding process, whereas FIG. 11B shows the transparent thin film structure Showing the ohmic contact current spreading layer 90 and the functional thin film layer 130 formed by indirect wafer bonding together with the binding dissimilar material layer 120. [ The functional thin film layer 130 located on the ohmic contact current spreading layer 90 is formed of a material capable of acting as a transparent electric conductor, a fluorescent material, an anti-reflector, or an optical filter.

An n-type ohmic contact electrode and an electrode pad 70 are formed on a part of the lower nitride-based clad layer 20 exposed to the atmosphere, and an ohmic contact current spreading layer 90 composed of the electrically conductive thin film structure, A p-type electrode pad 60 forming a shock-resistant contact interface is formed in a partial area of the upper or the functional thin film layer 130.

The shape of the structure according to the removal process of the partial region may be changed into various shapes depending on the position to be formed, the shape and size of the electrode. For example, the upper nitride-based clad layer 40 and the nitride-based active layer 30 may be removed in a region in contact with one edge as in the present embodiment. In order to disperse the current density, The removed region may extend in correspondence with the corresponding electrode.

12 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device as a third embodiment manufactured by the present invention.

12, a lower nitride-based clad layer 20 made of an n-type conductive Group III nitride-based semiconductor including a buffering layer is formed on a growth substrate 10 basically, Based active cladding layer 40 composed of a nitride-based active layer 30 and a p-type conductive group III nitride-based semiconductor is formed in a part of the upper part of the cladding layer 20. Also, although not shown in FIG. 12, the upper nitride-based clad layer 40 may separately include an interface modification layer. The surface modification layer may be formed of a superlattice structure, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type conductive InGaN, AlInN, InN, AlGaN, polar surface of the group III nitride system. In particular, the surface modification layer of the superlattice structure is composed of nitride or carbon nitride containing Group 2, Group 3, or Group 4 element components. The light emitting structure for the light emitting diode may be formed by MOCVD or MBE.

12A is a schematic cross-sectional view of the ohmic contact current spreading layer 90 formed on the upper nitride-based cladding layer 40 by the direct wafer bonding process and formed on the surface of the ohmic contact current spreading layer 90 12B shows an ohmic contact current spreading layer 90 formed by indirect wafer bonding together with the layer 120 for transparent bonding, and an ohmic contact current spreading layer 90 formed on the surface of the ohmic contact current spreading layer 90 Surface irregularities. The surface irregularities introduced into the surface of the ohmic contact current spreading layer 90 increase the amount of light emitted to the outside by changing the incident angle of the light generated in the nitride based active layer 30.

An n-type ohmic contact electrode and an electrode pad 70 are formed on a part of the lower nitride-based clad layer 20 exposed to the atmosphere, and an ohmic contact current spreading layer 90 composed of the electrically conductive thin film structure, A p-type electrode pad 60 forming a shock-resistant contact interface is formed in a part of the upper part.

The shape of the structure according to the partial region removal process can be changed into various shapes according to the position, electrode shape and size of the electrode. For example, the upper nitride-based clad layer 40 and the nitride-based active layer 30 may be removed in a region in contact with one edge as in the present embodiment. In order to disperse the current density, The removed region may extend in correspondence with the corresponding electrode.

13 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device as a fourth embodiment manufactured by the present invention.

Referring to FIG. 13, a lower nitride-based clad layer 20 made of an n-type conductive group III nitride-based semiconductor including a buffering layer is formed on a growth substrate 10 basically, Based active cladding layer 40 composed of a nitride-based active layer 30 and a p-type conductive group III nitride-based semiconductor is formed in a part of the upper part of the cladding layer 20. Also, although not shown in FIG. 13, the upper nitride-based clad layer 40 may separately include an interface modification layer. The surface modification layer may be formed of a superlattice structure, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type conductive InGaN, AlInN, InN, AlGaN, polar surface of the group III nitride system. In particular, the surface modification layer of the superlattice structure is composed of nitride or carbon nitride containing Group 2, Group 3, or Group 4 element components. The light emitting structure for the light emitting diode may be formed by MOCVD or MBE.

13A is a plan view of the ohmic contact current spreading layer 90 formed on the upper nitride-based cladding layer 40 by a direct wafer bonding process, the ohmic contact current spreading layer 90 formed on the ohmic contact current spreading layer 90 alone And the functional thin film layer 130 while FIG. 13B shows an ohmic contact current spreading layer 90 formed by indirect wafer bonding with the layer 120 of transparent bonding material, the ohmic contact current spreading layer 90, The surface irregularities introduced on the surface of the layer 90, and the functional thin film layer 130 are shown. The surface irregularities introduced into the surface of the ohmic contact current spreading layer 90 change the incident angle of light generated in the nitride based active layer 30 to increase the amount of light emitted to the outside. The functional thin film layer 130 may be formed of a transparent conductive material, a fluorescent material, an anti-reflector, or a material capable of acting as an optical filter.

An n-type ohmic contact electrode and an electrode pad 70 are formed on a part of the lower nitride-based clad layer 20 exposed to the atmosphere, and an ohmic contact current spreading layer 90 composed of the electrically conductive thin film structure, A p-type electrode pad 60 forming a shock-resistant contact interface is formed in a part of the upper part.

The shape of the structure according to the partial region removal process can be changed into various shapes according to the position, electrode shape and size of the electrode. For example, the upper nitride-based clad layer 40 and the nitride-based active layer 30 may be removed in a region in contact with one edge as in the present embodiment. In order to disperse the current density, The removed region may extend in correspondence with the corresponding electrode.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. Accordingly, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concept of the present invention defined in the following claims are also within the scope of the present invention.

FIG. 1 is a cross-sectional view showing a typical example of a conventional Group III nitride-based semiconductor light-emitting diode device,

2 is a cross-sectional view of an electroconductive thin film structure for wafer bonding formed on a supporting substrate according to the present invention,

3 is a cross-sectional view of a composite structure in which a light emitting structure for a group III nitride-based light emitting diode device and an electrically conductive thin film structure according to the present invention are combined by a direct wafer bonding process,

4 is a cross-sectional view of a composite structure in which a light emitting structure for a group III nitride-based light emitting diode device and an electrically conductive thin film structure according to the present invention are combined by a direct wafer bonding process,

5 is a cross-sectional view of a composite structure in which a light emitting structure for a group III nitride-based light emitting diode device and an electrically conductive thin film structure according to the present invention are combined by an indirect wafer bonding process,

6 is a cross-sectional view of a composite structure in which a light emitting structure for a group III nitride-based light emitting diode device and an electrically conductive thin film structure according to the present invention are combined by an indirect wafer bonding process,

FIG. 7 is a cross-sectional view illustrating a process of lifting off a supporting substrate from an electrically conductive thin film structure in a wafer-bonded composite structure according to the present invention,

8 is a plan view showing a state in which the electroconductive thin film structure according to the present invention is formed on a top layer of a light emitting structure for a light emitting diode element by wafer bonding,

9 is a flowchart illustrating a process of manufacturing a group III nitride-based semiconductor light-emitting diode device according to an embodiment of the present invention,

10 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device as a first embodiment manufactured by the present invention,

11 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device as a second embodiment manufactured by the present invention,

12 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device as a third embodiment manufactured by the present invention,

13 is a cross-sectional view of a group III nitride-based semiconductor light-emitting diode device as a fourth embodiment manufactured by the present invention.

Claims (29)

delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete Preparing a growth substrate for growing a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device; A lower nitride-based clad layer formed on the growth substrate and made of an n-type conductive group III nitride-based semiconductor; a nitride-based active layer formed on a partial region of the lower nitride-based clad layer and a p- Growing a top nitride-based clad layer made of a semiconductor to complete a light-emitting structure for a light-emitting diode device; Preparing a support substrate for growing the electroconductive thin film structure; Forming an electroconductive thin film structure on the supporting substrate and having an electric resistance of 10 < -3 > OMEGA cm or less; Forming a composite structure by directly bonding the upper nitride-based clad layer on the growth substrate and the electroconductive thin film structure on the support substrate at a predetermined pressure and temperature by direct wafer bonding; Separating the support substrate from the wafer bonded composite structure; Forming a p-type electrode pad at a shocky contact interface on a part of the upper portion of the electroconductive thin film structure exposed to the atmosphere; And And forming an n-type ohmic contact electrode and an electrode pad on a part of the upper portion of the lower nitride-based clad layer. 19. The method of claim 18, The support substrate may be formed of one or more materials selected from the group consisting of sapphire, silicon, germanium, silicon germanium, silicon carbide, group 2-6 compounds, A method for manufacturing a light emitting diode device having a group III nitride-based semiconductor horizontal structure in which a glass, a group 3-5 compounds, a metal, or an alloy is used. 19. The method of claim 18, Prior to the support directly formed on the substrate to the electroconductive thin film structure, Al, Au, Ag, Ti , In, Sn, Zn, Cr, Pd, Pt, Ni, Mo, W, CrN, TiN, ZnO, In 2 Group III nitride-based semiconductors having a horizontally-structured structure including a sacrificial layer composed of O 3 , SnO 2 , ITO, NiO, SiO 2 , RuO 2 , IrO 2 , SiN x, metal, metal oxide, / RTI > 19. The method of claim 18, Wherein the wafer-to-wafer bonding process is performed by direct wafer bonding at a predetermined hydrostatic pressure and a temperature of 900 DEG C or lower, and wherein the upper nitride-based clad layer or the electrically conductive thin film A method for fabricating a light emitting diode device of Group III nitride-based semiconductor horizontal structure, wherein the structure is annealed and a solution or a surface treatment including a plasma is performed. 19. The method of claim 18, Before performing the wafer-to-wafer bonding process, the light-emitting structure for the group III nitride-based semiconductor light-emitting diode device and the electroconductive thin film structure are respectively grown on the growth substrate and the group III nitride (METHOD FOR MANUFACTURING LIGHT EMITTING DIODE DEVICE OF SEMICONDUCTOR HORN. 19. The method of claim 18, The supporting substrate separation process may include a group III nitride-based semiconductor horizontal structure light emitting diode device fabrication using one or more of chemical wet etching (CLO), chemical-mechanical polishing (CMP), or laser lift off Way. Preparing a growth substrate for growing a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device; A lower nitride-based clad layer formed on the growth substrate and made of an n-type conductive group III nitride-based semiconductor; a nitride-based active layer formed on a partial region of the lower nitride-based clad layer and a p- Growing a top nitride-based clad layer made of a semiconductor to complete a light-emitting structure for a light-emitting diode device; Preparing a support substrate for growing the electroconductive thin film structure; Forming an electroconductive thin film structure on the supporting substrate and having an electric resistance of 10 < -3 > OMEGA cm or less; The upper nitride-based clad layer on the growth substrate and the electroconductive thin film structure on the support substrate are bonded to each other by indirect wafer bonding at a predetermined pressure and temperature through a layer of a transparent bonding- To form a composite structure; Separating the support substrate from the wafer bonded composite structure; Forming a p-type electrode pad on a schottky contact interface formed in a part of the upper portion of the electroconductive thin film structure exposed to the atmosphere; And And forming an n-type ohmic contact electrode and an electrode pad on a part of the upper portion of the lower nitride-based clad layer. 25. The method of claim 24, The support substrate may be formed of one or more materials selected from the group consisting of sapphire, silicon, germanium, silicon germanium, silicon carbide, group 2-6 compounds, A method for manufacturing a light emitting diode device having a group III nitride-based semiconductor horizontal structure in which a glass, a group 3-5 compounds, a metal, or an alloy is used. 25. The method of claim 24, Prior to the support directly formed on the substrate to the electroconductive thin film structure, Al, Au, Ag, Ti , In, Sn, Zn, Cr, Pd, Pt, Ni, Mo, W, CrN, TiN, ZnO, In 2 Group III nitride having a sacrificial layer composed of O 3 , SnO 2 , ITO, NiO, SiO 2 , RuO 2 , IrO 2 , SiN x, Group 3-5 compounds, (METHOD FOR MANUFACTURING LIGHT EMITTING DIODE DEVICE OF SEMICONDUCTOR HORN. 25. The method of claim 24, Wherein the wafer-to-wafer bonding process is performed by direct wafer bonding at a predetermined hydrostatic pressure and a temperature of 900 DEG C or lower, and wherein the upper nitride-based clad layer or the electrically conductive thin film A method for fabricating a light emitting diode device of Group III nitride-based semiconductor horizontal structure, wherein the structure is annealed and a solution or a surface treatment including a plasma is performed. 25. The method of claim 24, Before performing the wafer-to-wafer bonding process, the light-emitting structure for the group III nitride-based semiconductor light-emitting diode device and the electroconductive thin film structure are respectively grown on the growth substrate and the group III nitride (METHOD FOR MANUFACTURING LIGHT EMITTING DIODE DEVICE OF SEMICONDUCTOR HORN. 25. The method of claim 24, The supporting substrate separation process may include a group III nitride-based semiconductor horizontal structure light emitting diode device fabrication using one or more of chemical wet etching (CLO), chemical-mechanical polishing (CMP), or laser lift off Way.
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KR19990037429A (en) * 1997-10-27 1999-05-25 모리시타 요이찌 Light emitting diode device and manufacturing method thereof
KR20040073307A (en) * 2003-02-12 2004-08-19 로무 가부시키가이샤 Semiconductor light emitting device
JP2007266571A (en) * 2006-02-28 2007-10-11 Mitsubishi Cable Ind Ltd Led chip, its manufacturing method, and light emitting device
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