KR101505317B1 - 금속-임베디드 포토마스크 및 그 제조 방법 - Google Patents

금속-임베디드 포토마스크 및 그 제조 방법 Download PDF

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Publication number
KR101505317B1
KR101505317B1 KR1020130109543A KR20130109543A KR101505317B1 KR 101505317 B1 KR101505317 B1 KR 101505317B1 KR 1020130109543 A KR1020130109543 A KR 1020130109543A KR 20130109543 A KR20130109543 A KR 20130109543A KR 101505317 B1 KR101505317 B1 KR 101505317B1
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KR
South Korea
Prior art keywords
metal
substrate
photomask
embedded
top surface
Prior art date
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KR1020130109543A
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English (en)
Korean (ko)
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KR20140038309A (ko
Inventor
리 융-춘
창 초-웨이
시에 이-타
얀 지히-난
Original Assignee
내셔널 청쿵 유니버시티
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Publication of KR20140038309A publication Critical patent/KR20140038309A/ko
Application granted granted Critical
Publication of KR101505317B1 publication Critical patent/KR101505317B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
KR1020130109543A 2012-09-20 2013-09-12 금속-임베디드 포토마스크 및 그 제조 방법 KR101505317B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW101134458A TWI450029B (zh) 2012-09-20 2012-09-20 金屬嵌入光罩及其製造方法
TW101134458 2012-09-20

Publications (2)

Publication Number Publication Date
KR20140038309A KR20140038309A (ko) 2014-03-28
KR101505317B1 true KR101505317B1 (ko) 2015-03-23

Family

ID=50314470

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130109543A KR101505317B1 (ko) 2012-09-20 2013-09-12 금속-임베디드 포토마스크 및 그 제조 방법

Country Status (3)

Country Link
KR (1) KR101505317B1 (zh)
CN (1) CN103676467B (zh)
TW (1) TWI450029B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105742414A (zh) * 2016-02-26 2016-07-06 海迪科（南通）光电科技有限公司 一种微纳pss制备用软膜及其制造方法
CN105576097A (zh) * 2016-02-26 2016-05-11 海迪科（南通）光电科技有限公司 一种纳米软膜光刻制备微纳pss的方法
CN105609607A (zh) * 2016-02-26 2016-05-25 海迪科（南通）光电科技有限公司 一种微纳pss制备用软膜结构
CN109445243A (zh) * 2018-12-21 2019-03-08 苏州瑞而美光电科技有限公司 一种光刻掩膜版及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07253654A (ja) * 1994-02-14 1995-10-03 Internatl Business Mach Corp <Ibm> 減衰移相マスクおよび製造方法
JPH10333318A (ja) * 1997-06-03 1998-12-18 Dainippon Printing Co Ltd 位相シフトフォトマスク及びその製造方法
KR20060079957A (ko) * 2005-01-04 2006-07-07 삼성에스디아이 주식회사 포토리소그래피용 연질 포토마스크, 그 제조방법, 이를채용한 패턴 형성 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101382715A (zh) * 2008-10-20 2009-03-11 友达光电股份有限公司 像素结构、显示面板、光电装置的制造方法
CN101598894B (zh) * 2009-07-07 2011-07-27 友达光电股份有限公司 光掩膜、薄膜晶体管元件及制作薄膜晶体管元件的方法
TW201208974A (en) * 2010-08-23 2012-03-01 Univ Nat Cheng Kung Manufacturing method of micro/nano-particle and micro/nano-particle unit
US8293625B2 (en) * 2011-01-19 2012-10-23 International Business Machines Corporation Structure and method for hard mask removal on an SOI substrate without using CMP process

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07253654A (ja) * 1994-02-14 1995-10-03 Internatl Business Mach Corp <Ibm> 減衰移相マスクおよび製造方法
JPH10333318A (ja) * 1997-06-03 1998-12-18 Dainippon Printing Co Ltd 位相シフトフォトマスク及びその製造方法
KR20060079957A (ko) * 2005-01-04 2006-07-07 삼성에스디아이 주식회사 포토리소그래피용 연질 포토마스크, 그 제조방법, 이를채용한 패턴 형성 방법

Also Published As

Publication number Publication date
CN103676467B (zh) 2019-05-21
CN103676467A (zh) 2014-03-26
TWI450029B (zh) 2014-08-21
TW201413371A (zh) 2014-04-01
KR20140038309A (ko) 2014-03-28

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