KR101492258B1 - In-line substrate processing system - Google Patents

Abstract

The inline processing system of the present invention includes a process chamber having a substrate supporting member having at least one opening and closing port and for supporting a substrate to be processed, a transfer chamber having a transfer chamber for transferring the substrate, And the process chamber and the transfer chamber are alternately repeated in accordance with the process sequence. According to the inline processing system of the present invention, the transfer chamber for transferring the substrate in accordance with the progress of the process is located, and the efficiency of the equipment can be improved by adjusting the position of the substrate to be processed appropriately according to the time of the process chamber.

A load lock chamber, a first load lock chamber, a second load lock chamber,

Description

[0001] IN-LINE SUBSTRATE PROCESSING SYSTEM [0002]

The present invention relates to an in-line substrate processing system, and more particularly, to an in-line substrate processing system capable of improving the efficiency of equipment by continuously performing a process without waiting time for substrate processing according to a difference in process time.

The present invention relates to an in-line substrate processing system for manufacturing a semiconductor device, and more particularly, to an in-line substrate processing system for processing a plurality of substrates by continuously loading / unloading a plurality of substrates into a process chamber, ≪ / RTI >

Generally, the cluster system includes a transfer chamber and a transfer robot provided freely rotatable in the transfer chamber. At each side of the transport chamber, a process chamber for carrying out the processing process of the substrate is mounted. Such a cluster system increases the throughput of a substrate by simultaneously processing a plurality of substrates or allowing various processes to proceed in succession. Another effort to increase the substrate throughput is to process a plurality of substrates simultaneously in one process chamber to increase the substrate throughput per hour.

However, even if the process chamber processes a plurality of substrates simultaneously (or continuously), a time loss occurs if the substrates before and after the process can not be efficiently exchanged in the process chamber. In a typical cluster system, in order to constitute a hexagonal transport chamber (basically composed of four process chambers and two load lock chambers), the area occupied by the transport chamber is not limited to the entire area of the system, The system width which is important in the system arrangement is increased more than necessary and the size of the vacuum system required to keep the transport chamber in a vacuum is increased to increase the equipment cost and installation cost. Further, the area of the transport chamber is further increased as the number of process chambers to be installed increases.

Thus, there is a demand for an inline substrate processing system capable of more efficiently exchanging substrates before and after processing, in addition to simultaneously (or continuously) processing a plurality of substrates in a process chamber for processing a plurality of substrates.

It is an object of the present invention to provide an inline substrate processing system capable of continuously processing by alternately providing a transfer chamber and a process chamber capable of efficiently processing a substrate.

According to an aspect of the present invention, there is provided an inline substrate processing system. An inline substrate processing system of the present invention includes: a process chamber having at least one opening and closing port for supporting a substrate to be processed; a transfer chamber including a transfer device for transferring the substrate to be processed, The process chamber and the transfer chamber are alternately repeated in accordance with the process sequence.

In one embodiment, the substrate support is a susceptor and more than one is installed in time for the process.

In one embodiment, the transport apparatus is provided with one or more rotating plates that rotate about an axis.

In one embodiment, the transfer chamber is positioned such that the axes of the transfer devices are positioned diagonally with respect to each other and the rotary plate is adapted to transfer the substrate to be processed.

In one embodiment, the apparatus further includes a load lock chamber located at one or both ends of the transfer chamber, for loading and unloading the substrate to be processed.

In one embodiment, a transfer chamber is further included between the load lock chamber and the transfer chamber.

In one embodiment, the transfer chamber is repeated with vacuum or atmospheric pressure.

In one embodiment, the apparatus further comprises a transfer chamber in contact with the load lock chamber and having a vacuum pump to bring the atmospheric pressure to a vacuum or to bring the vacuum to atmospheric pressure.

According to the inline substrate processing system of the present invention, the transfer chamber for transferring the substrate is positioned according to the progress of the process, and the position of the substrate to be processed is adjusted according to the time of the process chamber, thereby improving the efficiency of the equipment.

For a better understanding of the present invention, a preferred embodiment of the present invention will be described with reference to the accompanying drawings. The embodiments of the present invention may be modified into various forms, and the scope of the present invention should not be construed as being limited to the embodiments described in detail below. The present embodiments are provided to enable those skilled in the art to more fully understand the present invention. Therefore, the shapes and the like of the elements in the drawings can be exaggeratedly expressed to emphasize a clearer description. It should be noted that in the drawings, the same members are denoted by the same reference numerals. Detailed descriptions of well-known functions and constructions which may be unnecessarily obscured by the gist of the present invention are omitted.

1 is a top view of an inline substrate processing system according to a preferred embodiment of the present invention.

The first and second load lock chambers 12, 14 for loading / unloading the substrate to be processed, the first, second, third, and fourth transfer chambers 32, 34, 36, Second and third process chambers 52, 54 and 56 corresponding to the first, second and third transfer chambers 32, 34, 36 and 38, respectively,

The first load lock chamber 12 is provided with an atmospheric first transfer robot 16 operating at atmospheric pressure. The atmospheric first transfer robot 16 is capable of pivoting, elevating and lowering the transfer of substrates between the first transfer chamber 32 and the carrier. A slit valve 18 is installed at one side of the first transfer chamber 32 in contact with the first transfer chamber 32 to allow input and output of the target substrate.

 The atmospheric pressure first transfer robot 16 takes out two substrates W from the carrier in a single operation and transfers them to the first transfer chamber 12. For this purpose, the atmospheric first transfer robot 16 may be configured as a robot having a double arm structure, each of which has a total of two end effectors so that two pre-processed substrates and two processed substrates can be exchanged at the same time. Alternatively, a robot having a single arm structure having at least one end effector may be used. The atmospheric pressure first conveying robot 16 may be provided with a track which can be moved laterally. As described above, the atmospheric first transfer robot 16 may be various robots used in a conventional semiconductor manufacturing process other than the single arm or double arm structure.

The substrate W to be processed in this inline substrate processing system is, for example, a wafer substrate for manufacturing a semiconductor circuit or a glass substrate for manufacturing a liquid crystal display. In addition to the illustrated configuration of the present inline substrate processing system, multiple processing systems may be required to perform all of the processes required for the complete fabrication of an integrated circuit or chip. However, for the sake of clarity of the present invention, a conventional configuration or a configuration that can be understood by a person skilled in the art is omitted.

The first transfer chamber 32 is for transferring two substrates w between the first load lock chamber 12 and the first process chamber 52 for processing two substrates w.

The first transfer chamber 32 is provided with a transfer device 31 therein to load and unload two substrates w with the susceptor 70 at a time. The transfer device 31 is constituted by two first rotating plate arms 33. [ Wherein the first transfer chamber 32 may be configured to perform various substrate processing operations. For example, in order to shorten the process time of the first process chamber 52, the atmospheric pressure may be set to a vacuum state or the vacuum state may be set at atmospheric pressure.

The first process chamber 52 has two susceptors 70 positioned on the rotation path of the first rotating plate arms 33 of the substrate transfer device 31. A slit valve 18 is installed on one side of the first load lock chamber 12 or the first transfer chamber 32 for inputting and outputting the substrates W and the other side can take over the substrate to be processed next Another slit valve 18 is provided so as to have a substrate entry / exit port on both sides.

 The susceptor 70 has lift pins 72 for taking in / transferring the substrate w from the substrate transfer device 31 and the lift pins 72 of the susceptor 70 are connected to the substrate w / Height is set to be different for taking over. For example, the lift pin 72 closest to the substrate entry port then has a lower height than the lift pin.

The elevation height of the lift pins 72 is set to be different to prevent interference and collision in the substrate transfer / take-in process with the substrate transfer apparatus 31. Here, the lift height of the lift pins 72 can be adjusted in accordance with the installation height of the first rotation plate arms 33 of the substrate transfer device 31.

 Here, the substrate to be processed w is a wafer substrate for manufacturing a semiconductor circuit or a glass substrate for manufacturing a liquid crystal display. For example, the process chamber may be an ashing chamber that uses plasma to remove the photoresist to remove the photoresist, and the process chamber may be a CVD (Chemical Vapor Deposition) chamber configured to deposit an insulating film , The process chamber may be an etch chamber configured to etch apertures or openings in the insulating layer to form interconnect structures and the process chamber may be a PVD chamber configured to deposit a barrier film, Or a PVD chamber configured to deposit a metal film. A number of processing systems may be required to perform all the processes required for the complete fabrication of an integrated circuit or chip.

The second and third transfer chambers 34 and 36 are for transferring two substrates w between the first, second and third process chambers 52, 54 and 56. The second and third transfer chambers 34 and 36 are provided with a transfer device 31 therein to load and unload the two wafers w at a time with the susceptor 70. The transport apparatus 31 is composed of two rotary plate arms 35 and 37. [ Where the second and third transfer chambers 35,37 can be configured to perform various substrate processing operations. For example, the substrate is transferred to a vacuum state to shorten the time of the second and third process chambers 54, 56.

The second and third process chambers 54 and 56 have two susceptors 70 positioned on the rotation path of the second and third rotary plate arms 35 and 37 of the substrate transfer device 31. A slit valve 18 is provided on the contact side surfaces of the second and third transfer chambers 34 and 36 for inputting and outputting the substrates W and the other side is provided with another slit Valves are installed and have a board entry and exit on both sides.

 The susceptor 70 has lift pins 72 for accepting / transferring the substrate w from the substrate transfer device 31 and the lift pins 72 of the susceptor 31 are connected to the substrate w / Height is set to be different for taking over. For example, the lift pin 72 closest to the substrate entry port then has a lower height than the lift pin.

The elevation height of the lift pins 72 is set to be different to prevent interference and collision in the substrate transfer / take-in process with the substrate transfer apparatus 31. Here, the lift height of the lift pins 72 can be adjusted according to the installation height of the rotary plate arms 35, 37 of the substrate transfer device 31.

 Here, the substrate to be processed w is a wafer substrate for manufacturing a semiconductor circuit or a glass substrate for manufacturing a liquid crystal display. For example, the process chamber may be an ashing chamber that uses plasma to remove the photoresist to remove the photoresist, and the process chamber may be a CVD (Chemical Vapor Deposition) chamber configured to deposit an insulating film , The process chamber may be an etch chamber configured to etch apertures or openings in the insulating layer to form interconnect structures and the process chamber may be a PVD chamber configured to deposit a barrier film, Or a PVD chamber configured to deposit a metal film. A number of processing systems may be required to perform all the processes required for the complete fabrication of an integrated circuit or chip.

The fourth transfer chamber 38 positions the processed substrate in the third process chamber 56 so that the processed substrate is easily transferred. The second load lock chamber 14 takes over the substrate to be processed waiting in the fourth transfer chamber 38 by using the atmospheric pressure transfer robot 17 operating at atmospheric pressure and takes it out to the carrier.

Figs. 2 to 5 are views schematically showing an in-line substrate processing system according to another embodiment of the transport apparatus and the position of the susceptor.

Referring to FIG. 2, the in-line substrate processing system according to the modification of the present invention has basically the same structure as the above-described preferred embodiment. However, the number of susceptors is controlled by the process environment and process time.

 The first transfer chamber 32 is for transferring one substrate w between the first process chambers 52 for processing a single substrate w taken over from the first load lock chamber . The first transfer chamber 32 is provided with a transfer device 31a therein to load and unload one substrate w at a time with the susceptor 70. [ The transfer device 31a is constituted by one first rotary plate arm 33a. The first transfer chamber 32 performs the operation by vacuuming the atmospheric pressure to shorten the process time of the first process chamber 52.

The first process chamber 52 has a susceptor 70 positioned on the rotation path of the first rotary plate arm 33a of the substrate transfer device 31a. A slit valve 18 is provided for inputting and outputting the substrates W to be in contact with the first transfer chamber 32 and another side is provided for transferring the substrate to the next second process chamber 54, The slit valve is provided and has a substrate entry port on both sides.

The susceptor 70 has lift pins 72 for taking over / taking over the substrate w from the substrate transfer device 31a.

The second and third transfer chambers 34 and 36 are for transferring one substrate w between the first, second and third process chambers 52, 54 and 56. The second and third transfer chambers 34 and 36 are provided with a transfer device 31a to load and unload one substrate w at a time with the susceptor 70. [ Wherein the second and third transfer chambers 34,36 may be configured to perform various substrate processing operations. For example, in order to shorten the time of the first, second and third process chambers 52, 54 and 56, the substrate is transferred to a vacuum state sieve.

The second and third process chambers 54 and 56 have the susceptor 70 positioned on the rotation path of the second and third rotary plate arms 35a and 37a of the substrate transfer device. A slit valve 18 is installed on the side surfaces of the first, second and third transfer chambers 32, 34 and 36 for inputting and outputting the substrates W, and the other side of the first, second and third transfer chambers 32, Another slit valve is provided and has a substrate entry / exit port on both sides.

The susceptor 70 has lift pins 72 for taking over / taking over the substrate w from the substrate transfer device 31a.

The fourth transfer chamber 38 is provided with a transfer device 31a therein to transfer the processed substrate of the third process chamber 56 to the second load lock chamber. The fourth transfer chamber 38 may be combined with an operation of putting the vacuum state at atmospheric pressure in order to shorten the working time of the substrate to be processed.

Referring to FIG. 3, the inline substrate processing system according to another modification of the present invention has basically the same structure as the above-described preferred embodiment. However, the number of receivers and the number of conveying devices are controlled according to the process environment and the process time.

The first transfer chamber 32 is for transferring the four wafers w between the first load lock chamber and the first process chamber 32 for processing four wafers w.

The first transfer chamber 32 is provided with a transfer device 31b to load and unload the four wafers w to the susceptor 70 at a time. The first rotary plate 33b moves in the clockwise direction and the counterclockwise direction and moves in the first process chamber 52. The first rotary plate 33b is moved in the clockwise direction and counterclockwise direction, The first transfer chamber 32 may be configured to perform various substrate processing operations. For example, in order to shorten the processing time of the first process chamber 52 It is also possible to carry out the work of making the atmospheric pressure vacuum or putting the vacuum state at atmospheric pressure.

The first process chamber 52 has four susceptors 70 positioned on the rotation path of the first rotating plate arm 33b of the substrate transfer device 31b. A slit valve 18 is installed on the side of the first transfer chamber 32 for inputting and outputting the substrates W and another slit valve is provided on the side of the first transfer chamber 32 for transferring the substrate to the next process. And has a substrate entrance.

 The susceptor 70 has lift pins 70 for taking in / transferring the substrate w from the substrate transfer device 31b and the lift pins 72 of the susceptor 70 are connected to the substrate w / Height is set to be different for taking over. For example, the lift pin 72 closest to the substrate entry port then has a lower height than the lift pin.

The lift height of the lift pins 72 is set to be different from each other in order to prevent interference and collision in the substrate transferring / transferring process with the substrate transferring device 31b. Here, the lift height of the lift pins 72 can be adjusted according to the installation height of the first rotary plate arm 33b of the substrate transfer device 31b.

The second and third transfer chambers 34 and 36 are for transferring the four wafers w between the first, second and third process chambers 52, 54 and 56. The second and third transfer chambers 34 and 36 are each provided with a transfer device 31b to load and unload the four wafers w to the susceptor 70 at a time. The transfer device 31b is composed of two second and third rotating plate arms 35b and 37b. The second and third rotary plates 35b and 37b move clockwise and counterclockwise to transfer the substrate to the susceptor 70 located in the second and third process chambers 54 and 56

 Wherein the second and third transfer chambers 34,36 may be configured to perform various substrate processing operations. For example, in order to shorten the time of the second and third process chambers 54 and 56, the substrate is transferred to a vacuum state sieve.

The second and third process chambers 54 and 56 have the susceptor 70 positioned on the rotation path of the second and third rotary plate arms 35b and 37b of the substrate transfer apparatus. A slit valve 18 is installed on the side surfaces of the first, second and third transfer chambers 32, 34 and 36 for inputting and outputting the substrates W, and the other side of the first, second and third transfer chambers 32, Another slit valve is provided and has a substrate entry / exit port on both sides.

The susceptor 70 has lift pins 72 for taking over / transferring the substrate w from the substrate transfer device 31b.

The fourth transfer chamber 38 is provided with a transfer device 31b therein to transfer the processed substrate of the third process chamber 56 to the second load lock chamber. The fourth transfer chamber 38 may be combined with an operation of putting the vacuum state at atmospheric pressure in order to shorten the working time of the substrate to be processed.

Referring to FIG. 4, the inline substrate processing system according to another modification of the present invention has basically the same structure as the above-described preferred embodiment. However, depending on the process environment, the central axes of the transport apparatus are located at different places.

The first transfer chamber 32 is for transferring two substrates w between a first load lock chamber and a first process chamber 32 for processing two substrates w.

The transfer device 31c is provided inside the first transfer chamber 32 so that two substrates w can be loaded and unloaded with the susceptor 70 at a time. The transfer device 31c is constituted by two first rotating plate arms 33c. Here, the first rotating plate arms 33c move in the clockwise direction about the rotation axis to transfer the substrate to the susceptor 70 located in the first process chamber 52. [ Wherein the first transfer chamber 32 may be configured to perform various substrate processing operations. For example, in order to shorten the process time of the first process chamber 52, the atmospheric pressure may be set to a vacuum state or the vacuum state may be set at atmospheric pressure.

The first process chamber 52 has two susceptors 70 positioned on the rotation path of the first rotary plate arm 33c of the substrate transfer device 31c. A slit valve 18 is provided for inputting / outputting the substrates W to be processed on the side of the first transfer chamber 52, and another slit valve is provided on the other side for transferring the substrate to the next process, And has a substrate entrance.

 The susceptor 70 has lift pins 72 for accepting / transferring the substrate w from the substrate transfer device 31c and the lift pins 72 of the susceptor 70 are connected to the substrate w / Height is set to be different for taking over. For example, the lift pin 72 closest to the substrate entry port then has a lower height than the lift pin.

The lift height of the lift pins 72 is set to be different from each other in order to prevent interference and collision in the substrate transfer / take-over process with the substrate transfer device 31c. Here, the lift height of the lift pins 72 can be adjusted according to the installation height of the first rotary plate arm 33c of the substrate transfer device 31c.

The second and third transfer chambers 34 and 36 are for transferring two substrates w between the first and second process chambers 52 and 54. The second and third transfer chambers 32, 34 and 36 are each provided with a transfer device 31c to load and unload two substrates w with the susceptor 70 at a time. The transfer device 31c is composed of two second and third rotary plate arms 35c and 37c. The second transfer chamber 34 is located at a diagonal line different from the central axis of the first transfer chamber 32. The second rotary plate 35c of the second transfer chamber 34 receives the substrate to be processed of the susceptor 70 located in the first process chamber 32, The second rotary plate 33c of the first transfer chamber 32 enters into the first process chamber 52 to transfer the substrate to be processed to the susceptor 70 have. Therefore, the transfer speed between the process and the process for the process can be improved and the efficiency of the process can be increased.

The third transfer chamber 36 is located at a diagonal line different from the central axis of the second transfer chamber 34. The third rotating plate 37c of the third transfer chamber 36 takes over the substrate to be processed of the susceptor 70 located in the second process chamber 54, The second rotary plate 35c of the second transfer chamber 54 enters the second process chamber 54 and the substrate to be processed is transferred to the susceptor 70 can do. Here, the second and third transfer chambers 34, 36 may be configured to perform various substrate processing operations. For example, in order to shorten the time of the second and third process chambers 52 and 54, the processed substrate can be vacuumed or transferred to the atmospheric pressure state.

The second and third process chambers 52 and 54 have the susceptor 70 positioned on the rotation path of the second and third rotary plate arms 35c and 37c of the substrate transfer device 31c. A slit valve 18 is installed on the side surfaces of the first, second and third transfer chambers 32, 34 and 36 for inputting and outputting the substrates W, and the other side of the first, second and third transfer chambers 32, Another slit valve is provided and has a substrate entry / exit port on both sides.

The susceptor 70 has lift pins 72 for taking over / transferring the substrate w from the substrate transfer device 31c.

5 and 6, the inline substrate processing system according to another modification of the present invention has basically the same structure as the above-described preferred embodiment. However, the number of susceptors and the number of conveying devices are controlled according to the process environment and process time.

The first transfer chamber 32 is for transferring the substrate to be processed transferred from the first load lock chamber. The transfer device 31d is constituted by one or two first rotating plate arms 33d. The first rotating plate arm 33d moves in the clockwise direction to transfer the substrate to the susceptor 70 located in the first process chamber 32. [ Wherein the first transfer chamber 32 may be configured to perform various substrate processing operations. For example, in order to shorten the processing time of the process chamber, the atmospheric pressure may be set to a vacuum state or the vacuum state may be set at atmospheric pressure. The rotary plate may be configured as a robot having a double arm structure having a total of one end effector so that one substrate to be processed and two substrates after processing can be exchanged at the same time. Alternatively, a robot having a single arm structure having at least one end effector may be used.

The first process chamber 52 has one susceptor 70 positioned on the rotation path of the first rotary plate arm 33d of the substrate transfer device 31d. A slit valve is provided on the side surface contacting with the first transfer chamber 32 for inputting and outputting the substrates W and another slit valve is provided on the other side so as to take over the substrate to be processed in the next step, .

 The susceptor 70 has lift pins 72 for taking over / taking over the substrate w from the substrate transfer device 31d. When the operation time of the second process chamber 54, which will be described later, takes about twice the time of the first process chamber 52, the temperature of the susceptor 70 located in the first process chamber 52, The number is one. Referring to FIG. 6, it can be seen that PM1_S1 moves to the susceptor 70 of PM2_S1 and PM2_S2 under the same condition per hour using TM1. In addition, PM2_S1 and PM2_S2 are processing process time of PM2_S1 is twice as fast as moving to PM3_S1, so PM3_S1 is a process process chart showing that PM3_S1 continues to exist even if there is only one PM3_S1. As described above, since the position of the susceptor 70 can be variably controlled according to each process time, the process can be continuously performed and the efficiency of the equipment can be increased.

The second, third, and fourth transfer chambers 34, 36, and 38 transfer the substrate w between the first, second, third, and fourth process chambers 52, 54, . The second, third, and fourth transfer chambers 34, 36, and 38 are each provided with a transfer device 31d to load up to four wafers at a time and then load and unload two sheets with the susceptor 70 can do. The transfer device 31d is constituted by two second, third, and fourth rotary plate arms 35d, 37d, and 39d. Here, the second, third, and fourth rotary plate arms 35d, 37d, and 39d move in the clockwise direction to move the susceptor 70 located in the second, third, and fourth process chambers 52, 54, 56, The processed substrate is taken over

 Here, the second, third, and fourth transfer chambers 34, 36, 38 may be configured to perform various substrate processing operations. For example, in order to shorten the time of the second, third, and fourth process chambers 52, 54, 56, and 58, the substrate is transferred to a vacuum state sieve.

The second, third, and fourth process chambers 52, 54, 56, 58 are disposed on the rotation path of the second, third, and fourth rotary plate arms 35d, 37d, 39d of the substrate transfer device 31d, (70). A slit valve 18 is installed on the side surfaces of the second, third, and fourth transfer chambers 34, 36, and 38 for inputting and outputting the substrates W, and the other side of the second, third, and fourth transfer chambers 34, Another slit valve is provided and has a substrate entry / exit port on both sides.

The susceptor 70 has lift pins 72 for taking over / taking over the substrate w from the substrate transfer device 31d.

Figs. 7-9 are diagrams of an inline substrate processing system showing various variations depending on the position of the load lock chamber. Fig.

 Referring to FIG. 7, the inline substrate processing system according to a preferred modification of the present invention has basically the same structure as the above-described preferred embodiment. The position of the first load lock chamber 12 for loading and unloading in the carrier is located only on one side.

The first load lock chamber 12 transfers the substrate to the first transfer chamber 32 through the atmospheric first transfer robot 16 for loading and unloading the substrate from the carrier. The first transfer chamber 32 converts the atmospheric pressure to a vacuum state to reduce the process time of the first process chamber 52. The transfer device 31 of the first process chamber 52 takes over the substrate to be processed on the susceptor 70 of the first process chamber.

The first process chamber 52 has two susceptors 70 positioned on the rotation path of the first rotating plate arms 33 of the substrate transfer device 31. A slit valve 18 is installed on one side of the first load lock chamber 12 or the first transfer chamber 32 for inputting and outputting the substrates W and the other side of the substrate W is transferred to the next process Another slit valve is provided to allow substrate entry and exit on both sides.

 The susceptor 70 has lift pins 72 for taking in / transferring the substrate w from the substrate transfer device 31 and the lift pins 72 of the susceptor 70 are connected to the substrate w / Height is set to be different for taking over. For example, the lift pin 72 closest to the substrate entry port then has a lower height than the lift pin.

The elevation height of the lift pins 72 is set to be different to prevent interference and collision in the substrate transfer / take-in process with the substrate transfer apparatus 31. Here, the lift height of the lift pins 72 can be adjusted according to the installation height of the first rotary plate arm 33 () of the substrate transfer device 31.

The second and third transfer chambers 54 and 56 are for transferring the two wafers w between the first, second and third process chambers 52, 54 and 56. The second and third transfer chambers 34 and 36 are provided with a transfer device 31 therein to load and unload the two wafers w at a time with the susceptor 70. The conveying device 31 is composed of two second and third rotary plate arms 35 and 37. Wherein the second and third transfer chambers 54,56 may be configured to perform various substrate processing operations. For example, in order to shorten the time of the second and third process chambers 54 and 56, the substrate is transferred to a vacuum state sieve.

The second and third process chambers 54 and 56 have two susceptors 70 positioned on the rotation path of the second and third rotary plate arms 35 and 37 of the substrate transfer device 31. A slit valve 18 is provided on the contact side surfaces of the second and third transfer chambers 34 and 36 for inputting and outputting the substrates W and another slit valve 18 is provided on the other side, And has a substrate entry / exit port on both sides.

 The susceptor 70 has lift pins 72 for taking in / transferring the substrate w from the substrate transfer device 31 and the lift pins 72 of the susceptor 70 are connected to the substrate w / Height is set differently for takeover. For example, the lift pin 72 closest to the substrate entry port then has a lower height than the lift pin.

The elevation height of the lift pins 72 is set to be different to prevent interference and collision in the substrate transfer / take-in process with the substrate transfer apparatus 31. Here, the lift height of the lift pins 72 can be adjusted according to the installation height of the second and third rotary plate arms 35, 37 of the substrate transfer device 31.

The fourth and fifth transfer chambers 38 and 40 position the processed substrate in the third process chamber 56 to facilitate transfer. The second load lock chamber 14 takes over the substrate to be processed waiting in the fourth transfer chamber 38 by using the second transfer robot 17 operated in an atmospheric pressure or a vacuum state and transfers it to the fifth transfer chamber 40 Transfer.

The fifth, sixth, and seventh process chambers 58, 60, and 62 are two susceptors positioned on the rotation path of the fifth, sixth, and seventh rotation plates 41, (70). A slit valve 18 is installed on the contact side surfaces of the fifth, sixth, and seventh transfer chambers 40, 42, and 44 for inputting and outputting the substrates W, and the other side of the transfer chambers 40, Another slit valve is provided and has a substrate entry / exit port on both sides.

 The susceptor 70 has lift pins 72 for taking in / transferring the substrate w from the substrate transfer device 31 and the lift pins 72 of the susceptor 70 are connected to the substrate w / Height is set to be different for taking over. For example, the lift pin 72 closest to the substrate entrance () then has a lower height than the lift pin.

The elevation height of the lift pins 72 is set to be different to prevent interference and collision in the substrate transfer / take-in process with the substrate transfer apparatus 31. In this case, the lift height of the lift pins 72 can be adjusted according to the installation height of the fifth, sixth, and seventh rotary plate arms 41, 43, 45 of the substrate transfer device 31.

The sixth, seventh transfer chambers 42, 44 are for transferring two substrates w between the fifth, sixth and seventh process chambers 58, 60, 62. The sixth and seventh transfer chambers 43 and 45 are provided with a transfer device 31 to load and unload the two wafers W to be processed at a time with the susceptor 70. The transfer device 31 is composed of two sixth and seventh rotary plate arms 43 and 45. Wherein the sixth and seventh transfer chambers 42,44 may be configured to perform various substrate processing operations. For example, in order to shorten the processing time of the fifth, sixth, and seventh process chambers 58, 60, 62, the substrate is transferred to a vacuum state sieve.

 The eighth transfer chamber 46 takes over the completed substrate of the seventh process chamber 62 and reaches the first rotary lock plate 12 at the atmospheric pressure first transferring position of the first load lock chamber 12, The robot 16 takes over the substrate to be processed and loads it on the carrier.

 Referring to FIG. 8, the inline substrate processing system according to a preferred modification of the present invention has basically the same structure as the above-described preferred embodiment. However, the first and second load lock chambers for loading and unloading from the carrier are located on both sides.

The first transfer chamber 32 is for transferring two substrates w between the first load lock chamber 12 and the first process chamber 62 for processing two substrates w respectively .

The first transfer chamber 32 is provided with a transfer device 31 therein to load and unload two substrates w with the susceptor 70 at a time. The transfer device 31 is constituted by two first rotating plate arms 33. [ Wherein the first transfer chamber 32 may be configured to perform various substrate processing operations. For example, in order to shorten the process time of the first process chamber 62, the atmospheric pressure may be set to a vacuum state or the vacuum state may be set at atmospheric pressure.

The first process chamber 62 has two susceptors 70 positioned on the rotation path of the first rotating plate arms 33 of the substrate transfer device 31. A slit valve 18 is installed on one side of the first transfer chamber 32 for inputting / outputting the substrates W and another slit valve is provided on the other side so as to transfer the substrate to the next process. And has a substrate entrance.

 The susceptor 70 has lift pins 72 for taking in / transferring the substrate w from the substrate transfer device 31 and the lift pins 72 of the susceptor 70 are connected to the substrate w / Height is set to be different for taking over. For example, the lift pin 72 closest to the substrate entry port then has a lower height than the lift pin.

The elevation height of the lift pins 72 is set to be different to prevent interference and collision in the substrate transfer / take-in process with the substrate transfer apparatus 31. Here, the lift height of the lift pins 72 can be adjusted in accordance with the installation height of the first rotation plate arms 33 of the substrate transfer device 31.

The second and third transfer chambers 34 and 36 are for transferring two substrates w between the first, second and third process chambers 62, 64 and 66. The second and third transfer chambers 34 and 36 are provided with a transfer device 31 therein to load and unload the two wafers w at a time with the susceptor 70. The conveying device 31 is composed of two second and third rotary plate arms 35 and 37. Here, the second and third transfer chambers 34 and 36 may be configured to perform various substrate processing operations. For example, in order to shorten the time of the second and third process chambers 64 and 66, the substrate is transferred to a vacuum state sieve.

The second and third process chambers 64 and 66 have two susceptors 70 positioned on the rotation path of the second and third rotary plate arms 35 and 37 of the substrate transfer device 31. A slit valve 18 is provided on the contact side surfaces of the second and third transfer chambers 34 and 36 for inputting and outputting the substrates W and another slit valve 18 is provided on the other side, And has a substrate entry / exit port on both sides.

 The susceptor 70 has lift pins 72 for taking in / transferring the substrate w from the substrate transfer device 31 and the lift pins 72 of the susceptor 70 are connected to the substrate w / Height is set to be different for taking over. For example, the lift pin 72 closest to the substrate entry port then has a lower height than the lift pin.

The elevation height of the lift pins 72 is set to be different to prevent interference and collision in the substrate transfer / take-in process with the substrate transfer apparatus 31. Here, the lift height of the lift pins 72 can be adjusted according to the installation height of the second and third rotary plate arms 35, 37 of the substrate transfer device 31.

The fourth transfer chamber 38 positions the processed substrate in the third process chamber 56 so that the processed substrate is easily transferred. The second load lock chamber 14 takes over the substrates to be processed waiting in the fourth transfer chamber 38 by using the atmospheric pressure second transfer robot 17 operating at atmospheric pressure and takes them out as carriers.

Figure 9 shows an in-line substrate processing system showing a further variant with a buffering chamber added.

 Referring to FIG. 9, the inline substrate processing system according to a preferred modification of the present invention has basically the same structure as the above-described preferred embodiment. Only a buffering chamber is added.

 The atmospheric pressure first transfer robot 16 takes out the two wafers W to be processed from the carrier in a single operation and transfers them to the buffering chamber 80. For this purpose, the atmospheric first transfer robot 16 may be configured as a robot having a double arm structure, each of which has a total of two end effectors so that two pre-processed substrates and two processed substrates can be exchanged at the same time. Alternatively, a robot having a single arm structure having at least one end effector may be used. The atmospheric pressure conveying robot may have a track that can be moved laterally. As described above, the atmospheric pressure conveying robot can use various robots used in a conventional semiconductor manufacturing process in addition to the single arm or double arm structure.

The buffering chamber 80 receives one or more substrates to be processed from the atmospheric first transfer robot 16. The buffering chamber 80 is operated to change the atmospheric pressure to a vacuum state, thereby reducing the processing time. And the substrate to be processed is handed over to the first transfer chamber 32.

The first transfer chamber 32 is for transferring two substrates w between the buffering chamber 80 and the first process chamber 52 for processing two substrates w respectively.

The first transfer chamber 52 is provided with a transfer device 31 therein to load and unload two substrates w with the susceptor 70 at a time. The transfer device 31 is constituted by two first rotating plate arms 33. [ Wherein the first transfer chamber 32 may be configured to perform various substrate processing operations. For example, in order to shorten the processing time of the process chamber, the atmospheric pressure may be set to a vacuum state, or a vacuum state may be set at atmospheric pressure.

The first process chamber 52 has two susceptors 70 positioned on the rotation path of the first rotating plate arms 33 of the substrate transfer device 31. A slit valve is provided on one side of the first transfer chamber 32 for inputting / outputting the substrates W and another slit valve is provided on the other side so as to transfer the substrate to the next process. .

 The susceptor 70 has lift pins 72 for taking in / transferring the substrate w from the substrate transfer device 31 and the lift pins 72 of the susceptor 70 are connected to the substrate w / Height is set to be different for taking over. For example, the lift pin 72 closest to the substrate entry port then has a lower height than the lift pin.

The elevation height of the lift pins 72 is set to be different to prevent interference and collision in the substrate transfer / take-in process with the substrate transfer apparatus 31. Here, the lift height of the lift pins 72 can be adjusted in accordance with the installation height of the first rotary plate arms 33 of the substrate transfer apparatus. An inline wave processing system in which such a structure is repeated alternately may be modified into another form within the technical scope of the present invention.

The embodiments of the inline substrate processing system of the present invention described above are merely illustrative and those skilled in the art will appreciate that various modifications and equivalent embodiments are possible without departing from the scope of the present invention. You will know. Accordingly, it is to be understood that the present invention is not limited to the above-described embodiments. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims. It is also to be understood that the invention includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.

The in-line substrate processing system of the present invention can be usefully used in various manufacturing processes for manufacturing semiconductor devices. In particular, it is well suited for substrate processing systems that seek to improve the efficiency of equipment with multi-processing systems that process multiple substrates.

1 is a top view of an inline substrate processing system according to a preferred embodiment of the present invention.

FIGS. 2 to 5 are views schematically showing various positions of the susceptor and various modifications according to the transporting apparatus.

6 is a view showing a process process of the substrate to be processed per hour in Fig.

7 to 8 are diagrams of an inline substrate processing system showing various modifications according to the position of the load lock chamber.

Figure 9 is a diagram of an inline substrate processing system showing another variant in which a buffering chamber is added.

Description of the Related Art [0002]

10: load lock chamber 12: first load lock chamber

14: second load lock chamber 15: conveying robot

16: first conveying robot 17: second conveying robot

18: slit valve 20: substrate to be processed

30: transfer chamber 31: transfer device

32: first transfer chamber 33: first rotating plate arm

34: second transfer chamber 35: second rotating plate arm

36: third transfer chamber 37: third rotating plate arm

38: Fourth transfer chamber 39: Fourth rotary plate arm

40: fifth transfer chamber 41: fifth rotating plate arm

42: Sixth transfer chamber 43: Sixth rotary plate arm

44: seventh transfer chamber 45: seventh rotary plate arm

46: eighth transfer chamber 47: eighth rotary plate arm

50: process chamber 52: first process chamber

54: second process chamber 56: third process chamber

58: fourth process chamber 60: fifth process chamber

62: sixth process chamber 64: seventh process chamber

70: susceptor 72: lift pin

80: buffering chamber 100: inline substrate processing system

Claims (8)

A process chamber having a substrate support having at least one opening and closing port and supporting a substrate to be processed; And a transfer chamber in which one side contacts the opening and closing port and is equipped with a transfer device for transferring the substrate to be processed, The transfer device may include at least one rotation plate that rotates about an axis, Wherein the transfer chamber is positioned such that axes of the transfer device are positioned diagonally with respect to each other and the rotary plate is positioned to transfer the substrate to be processed, Wherein the process chamber and the transfer chamber are alternately repeated in accordance with a process order. The method of claim 1, wherein Wherein the substrate support is a susceptor, and at least one of the susceptors is installed in accordance with a process time. delete delete 3. The method according to claim 1 or 2, Further comprising a load lock chamber located at one or both ends of the transfer chamber for loading and unloading the substrate to be processed. 6. The method of claim 5, Further comprising a transfer chamber between the load lock chamber and the transfer chamber. The method according to claim 6, Wherein the transfer chamber is repeated at a vacuum or an atmospheric pressure. The method of claim 7, wherein Further comprising a transfer chamber in contact with the load lock chamber and having a vacuum pump to bring the atmospheric pressure to a vacuum or to bring the vacuum to atmospheric pressure.

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