KR101490540B1 - 플라즈마 반응기 - Google Patents
플라즈마 반응기 Download PDFInfo
- Publication number
- KR101490540B1 KR101490540B1 KR1020107001116A KR20107001116A KR101490540B1 KR 101490540 B1 KR101490540 B1 KR 101490540B1 KR 1020107001116 A KR1020107001116 A KR 1020107001116A KR 20107001116 A KR20107001116 A KR 20107001116A KR 101490540 B1 KR101490540 B1 KR 101490540B1
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- plasma
- inlet
- reduction reactor
- reactor
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims description 56
- 230000009467 reduction Effects 0.000 claims description 30
- 238000010926 purge Methods 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- 239000000376 reactant Substances 0.000 claims description 18
- 238000001816 cooling Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000004891 communication Methods 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims description 2
- 230000002401 inhibitory effect Effects 0.000 claims 3
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- 239000008400 supply water Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 198
- 230000008569 process Effects 0.000 description 31
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 229910052731 fluorine Inorganic materials 0.000 description 7
- 239000011737 fluorine Substances 0.000 description 7
- 239000007800 oxidant agent Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000002485 combustion reaction Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- -1 steam Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
- H01J37/32844—Treating effluent gases
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2245/00—Applications of plasma devices
- H05H2245/10—Treatment of gases
- H05H2245/17—Exhaust gases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
- Y02C20/00—Capture or disposal of greenhouse gases
- Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Treating Waste Gases (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0714025.4 | 2007-07-19 | ||
GBGB0714025.4A GB0714025D0 (en) | 2007-07-19 | 2007-07-19 | Plasma reactor |
PCT/GB2008/050569 WO2009010792A2 (en) | 2007-07-19 | 2008-07-14 | Plasma reactor |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20100037609A KR20100037609A (ko) | 2010-04-09 |
KR101490540B1 true KR101490540B1 (ko) | 2015-02-05 |
Family
ID=38476563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020107001116A KR101490540B1 (ko) | 2007-07-19 | 2008-07-14 | 플라즈마 반응기 |
Country Status (6)
Country | Link |
---|---|
KR (1) | KR101490540B1 (zh) |
CN (2) | CN101755322B (zh) |
DE (1) | DE112008001790T5 (zh) |
GB (1) | GB0714025D0 (zh) |
TW (1) | TWI433718B (zh) |
WO (1) | WO2009010792A2 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102125818B (zh) * | 2010-12-31 | 2013-12-11 | 武汉凯迪工程技术研究总院有限公司 | 用等离子体制取高温、富含活性粒子水蒸汽的方法及装置 |
GB2493752A (en) * | 2011-08-17 | 2013-02-20 | Edwards Ltd | Apparatus for treating a gas stream |
US9240308B2 (en) * | 2014-03-06 | 2016-01-19 | Applied Materials, Inc. | Hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system |
GB2534890A (en) * | 2015-02-03 | 2016-08-10 | Edwards Ltd | Thermal plasma torch |
GB2536905B (en) | 2015-03-30 | 2020-01-08 | Edwards Ltd | Radiant burner |
CN113371679A (zh) * | 2021-05-27 | 2021-09-10 | 中国矿业大学 | 一种二氧化碳-甲烷等离子高温重整装置及高温重整方法 |
GB2625846A (en) * | 2022-12-27 | 2024-07-03 | Csk Inc | Scrubber burner |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5846275A (en) * | 1996-12-31 | 1998-12-08 | Atmi Ecosys Corporation | Clog-resistant entry structure for introducing a particulate solids-containing and/or solids-forming gas stream to a gas processing system |
US6617538B1 (en) * | 2000-03-31 | 2003-09-09 | Imad Mahawili | Rotating arc plasma jet and method of use for chemical synthesis and chemical by-products abatements |
JP2005205330A (ja) | 2004-01-23 | 2005-08-04 | Kanken Techno Co Ltd | パーフルオロコンパウンド排ガスのプラズマ分解処理方法および該方法を利用したプラズマ分解処理装置並びにこのプラズマ分解処理装置を搭載した排ガス処理システム |
WO2006082357A1 (en) * | 2005-02-07 | 2006-08-10 | Edwards Limited | Ejector pump |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW442842B (en) * | 1996-12-31 | 2001-06-23 | Atmi Ecosys Corp | Effluent gas stream treatment system for oxidation treatment of semiconductor manufacturing effluent gases |
GB0416385D0 (en) * | 2004-07-22 | 2004-08-25 | Boc Group Plc | Gas abatement |
-
2007
- 2007-07-19 GB GBGB0714025.4A patent/GB0714025D0/en not_active Ceased
-
2008
- 2008-07-14 KR KR1020107001116A patent/KR101490540B1/ko active IP Right Grant
- 2008-07-14 CN CN200880025328.1A patent/CN101755322B/zh not_active Expired - Fee Related
- 2008-07-14 WO PCT/GB2008/050569 patent/WO2009010792A2/en active Application Filing
- 2008-07-14 DE DE112008001790T patent/DE112008001790T5/de not_active Ceased
- 2008-07-14 CN CN201210392266.6A patent/CN103021779B/zh not_active Expired - Fee Related
- 2008-07-18 TW TW097127521A patent/TWI433718B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5846275A (en) * | 1996-12-31 | 1998-12-08 | Atmi Ecosys Corporation | Clog-resistant entry structure for introducing a particulate solids-containing and/or solids-forming gas stream to a gas processing system |
US6617538B1 (en) * | 2000-03-31 | 2003-09-09 | Imad Mahawili | Rotating arc plasma jet and method of use for chemical synthesis and chemical by-products abatements |
JP2005205330A (ja) | 2004-01-23 | 2005-08-04 | Kanken Techno Co Ltd | パーフルオロコンパウンド排ガスのプラズマ分解処理方法および該方法を利用したプラズマ分解処理装置並びにこのプラズマ分解処理装置を搭載した排ガス処理システム |
WO2006082357A1 (en) * | 2005-02-07 | 2006-08-10 | Edwards Limited | Ejector pump |
Also Published As
Publication number | Publication date |
---|---|
TW200914124A (en) | 2009-04-01 |
CN103021779B (zh) | 2016-08-10 |
GB0714025D0 (en) | 2007-08-29 |
CN101755322A (zh) | 2010-06-23 |
TWI433718B (zh) | 2014-04-11 |
WO2009010792A2 (en) | 2009-01-22 |
DE112008001790T5 (de) | 2010-04-29 |
CN103021779A (zh) | 2013-04-03 |
CN101755322B (zh) | 2014-02-19 |
KR20100037609A (ko) | 2010-04-09 |
WO2009010792A3 (en) | 2009-03-12 |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20180111 Year of fee payment: 4 |
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Payment date: 20200114 Year of fee payment: 6 |