KR101473547B1 - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

Info

Publication number
KR101473547B1
KR101473547B1 KR1020127027561A KR20127027561A KR101473547B1 KR 101473547 B1 KR101473547 B1 KR 101473547B1 KR 1020127027561 A KR1020127027561 A KR 1020127027561A KR 20127027561 A KR20127027561 A KR 20127027561A KR 101473547 B1 KR101473547 B1 KR 101473547B1
Authority
KR
South Korea
Prior art keywords
temperature
nozzle
liquid
downstream
temperature control
Prior art date
Application number
KR1020127027561A
Other languages
English (en)
Korean (ko)
Other versions
KR20130005293A (ko
Inventor
신이치 가와사키
미츠히데 노가미
요시노리 나카노
다카시 사토
Original Assignee
세키스이가가쿠 고교가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세키스이가가쿠 고교가부시키가이샤 filed Critical 세키스이가가쿠 고교가부시키가이샤
Publication of KR20130005293A publication Critical patent/KR20130005293A/ko
Application granted granted Critical
Publication of KR101473547B1 publication Critical patent/KR101473547B1/ko

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020127027561A 2010-03-24 2011-03-10 플라즈마 처리 장치 KR101473547B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2010-068746 2010-03-24
JP2010068746 2010-03-24
PCT/JP2011/055669 WO2011118408A1 (fr) 2010-03-24 2011-03-10 Dispositif de traitement au plasma

Publications (2)

Publication Number Publication Date
KR20130005293A KR20130005293A (ko) 2013-01-15
KR101473547B1 true KR101473547B1 (ko) 2014-12-16

Family

ID=44672969

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127027561A KR101473547B1 (ko) 2010-03-24 2011-03-10 플라즈마 처리 장치

Country Status (5)

Country Link
JP (1) JP5503733B2 (fr)
KR (1) KR101473547B1 (fr)
CN (1) CN102884223B (fr)
TW (1) TWI462654B (fr)
WO (1) WO2011118408A1 (fr)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3741861B2 (ja) * 1998-05-13 2006-02-01 株式会社フジクラ Ｃｖｄ反応装置
JP2003268553A (ja) * 2002-03-13 2003-09-25 Konica Corp 薄膜形成方法
KR20050103251A (ko) * 2002-10-07 2005-10-27 세키스이가가쿠 고교가부시키가이샤 플라즈마 표면 처리 장치
JP4451230B2 (ja) * 2004-02-13 2010-04-14 株式会社フジクラ 成膜装置
US8608900B2 (en) * 2005-10-20 2013-12-17 B/E Aerospace, Inc. Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes
US8110815B2 (en) * 2006-06-12 2012-02-07 Semequip, Inc. Vapor delivery to devices under vacuum
JP5206411B2 (ja) * 2006-08-29 2013-06-12 コニカミノルタホールディングス株式会社 薄膜形成装置、及び、薄膜形成方法
KR101153585B1 (ko) * 2007-07-09 2012-06-12 세키스이가가쿠 고교가부시키가이샤 필름 표면 처리 방법 및 편광판의 제조 방법 및 표면 처리 장치
JP4897742B2 (ja) * 2007-07-12 2012-03-14 積水化学工業株式会社 プラズマ処理方法及び装置

Also Published As

Publication number Publication date
WO2011118408A1 (fr) 2011-09-29
TWI462654B (zh) 2014-11-21
JP5503733B2 (ja) 2014-05-28
CN102884223B (zh) 2015-01-07
CN102884223A (zh) 2013-01-16
TW201138559A (en) 2011-11-01
KR20130005293A (ko) 2013-01-15
JPWO2011118408A1 (ja) 2013-07-04

Similar Documents

Publication Publication Date Title
WO2010150551A1 (fr) Procédé et dispositif de traitement d'une surface de film et procédé de production d'une plaque de polarisation
EP2513354B1 (fr) Dépôt chimique en phase vapeur assisté par plasma destiné à une région intérieure d'un article creux présentant un rapport d'aspect élevé
KR101345889B1 (ko) 필름 표면 처리 방법 및 편광판의 제조 방법 및 표면 처리 장치
KR101257655B1 (ko) 필름 표면 처리 장치
JP2010150372A (ja) フィルムの表面処理方法及び装置並びに偏光板の製造方法
WO2010073626A1 (fr) Procédé et dispositif permettant de traiter une surface de film et procédé de production d'un polariseur
KR101473547B1 (ko) 플라즈마 처리 장치
JP5167431B2 (ja) フィルム表面処理装置
JP5926269B2 (ja) フィルム表面処理方法及び装置
JP2009172595A (ja) 量産用の常圧プラズマ発生装置
KR101899177B1 (ko) 필름 표면 처리 방법 및 장치
JP2010209281A (ja) 基材の被膜形成方法および装置
US8778080B2 (en) Apparatus for double-plasma graft polymerization at atmospheric pressure
KR20080013447A (ko) 액체 원료 기화 장치
JP2006219721A (ja) 機能性フィルムの製造方法と機能性フィルムと表示素子と表示装置
JPWO2013047279A1 (ja) フィルムの表面処理開始方法及び表面処理装置
JP2011201970A (ja) フィルム表面処理装置
JPWO2012117933A1 (ja) フィルム表面処理方法及び装置
WO2012043385A1 (fr) Procédé et dispositif de traitement de surface de film
JP2012197396A (ja) 表面処理装置
JP2008293679A (ja) 大気圧プラズマ処理装置
WO2012043382A1 (fr) Dispositif d'alimentation pour un monomère polymérisable

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20171120

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20181121

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20191120

Year of fee payment: 6