KR101455249B1 - 플라즈마 프로세싱 장치 내 신속 반응성 열 제어를 위한 방법 및 장치 - Google Patents

플라즈마 프로세싱 장치 내 신속 반응성 열 제어를 위한 방법 및 장치 Download PDF

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KR101455249B1
KR101455249B1 KR1020117011134A KR20117011134A KR101455249B1 KR 101455249 B1 KR101455249 B1 KR 101455249B1 KR 1020117011134 A KR1020117011134 A KR 1020117011134A KR 20117011134 A KR20117011134 A KR 20117011134A KR 101455249 B1 KR101455249 B1 KR 101455249B1
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temperature
process chamber
component
flow rate
control valve
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KR20110071125A (ko
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츈레이 창
리차드 포벨
에즈라 로버트 골드
아지트 아크리쉬나
제임스 피. 크루즈
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B7/00—Heating by electric discharge
    • H05B7/18—Heating by arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H10P72/0402—
    • H10P72/0431—
    • H10P72/0602—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020117011134A 2008-10-17 2009-10-16 플라즈마 프로세싱 장치 내 신속 반응성 열 제어를 위한 방법 및 장치 Active KR101455249B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/253,657 2008-10-17
US12/253,657 US9155134B2 (en) 2008-10-17 2008-10-17 Methods and apparatus for rapidly responsive heat control in plasma processing devices
PCT/US2009/060979 WO2010045538A2 (en) 2008-10-17 2009-10-16 Methods and apparatus for rapidly responsive heat control in plasma processing devices

Publications (2)

Publication Number Publication Date
KR20110071125A KR20110071125A (ko) 2011-06-28
KR101455249B1 true KR101455249B1 (ko) 2014-10-27

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KR1020117011134A Active KR101455249B1 (ko) 2008-10-17 2009-10-16 플라즈마 프로세싱 장치 내 신속 반응성 열 제어를 위한 방법 및 장치

Country Status (7)

Country Link
US (2) US9155134B2 (enExample)
JP (1) JP2012506128A (enExample)
KR (1) KR101455249B1 (enExample)
CN (1) CN102187742B (enExample)
SG (1) SG195553A1 (enExample)
TW (1) TWI533764B (enExample)
WO (1) WO2010045538A2 (enExample)

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US9167721B2 (en) * 2011-11-29 2015-10-20 International Business Machines Corporation Direct facility coolant cooling of a rack-mounted heat exchanger
JP5942459B2 (ja) * 2012-02-14 2016-06-29 セイコーエプソン株式会社 ハンドラー、及び部品検査装置
JP5905735B2 (ja) * 2012-02-21 2016-04-20 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板温度の設定可能帯域の変更方法
US8901518B2 (en) 2012-07-26 2014-12-02 Applied Materials, Inc. Chambers with improved cooling devices
US10217615B2 (en) 2013-12-16 2019-02-26 Lam Research Corporation Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof
KR102395029B1 (ko) * 2015-08-07 2022-05-09 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN106922071B (zh) * 2015-12-25 2019-10-01 中微半导体设备(上海)股份有限公司 一种用于等离子反应装置的喷淋头加热冷却装置及方法
US11837479B2 (en) * 2016-05-05 2023-12-05 Applied Materials, Inc. Advanced temperature control for wafer carrier in plasma processing chamber
US9958782B2 (en) * 2016-06-29 2018-05-01 Applied Materials, Inc. Apparatus for post exposure bake
JP6738485B2 (ja) * 2016-08-26 2020-08-12 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 低圧リフトピンキャビティハードウェア
TWI829367B (zh) * 2017-11-16 2024-01-11 日商東京威力科創股份有限公司 電漿處理裝置、溫度控制方法及溫度控制程式
US11236422B2 (en) 2017-11-17 2022-02-01 Lam Research Corporation Multi zone substrate support for ALD film property correction and tunability
JP7008497B2 (ja) * 2017-12-22 2022-01-25 東京エレクトロン株式会社 基板処理装置および温度制御方法
US11434568B2 (en) * 2018-04-17 2022-09-06 Applied Materials, Inc. Heated ceramic faceplate
US10633742B2 (en) 2018-05-07 2020-04-28 Lam Research Foundation Use of voltage and current measurements to control dual zone ceramic pedestals
CN112368415B (zh) 2018-07-05 2024-03-22 朗姆研究公司 衬底处理系统中的衬底支撑件的动态温度控制
US11183400B2 (en) 2018-08-08 2021-11-23 Lam Research Corporation Progressive heating of components of substrate processing systems using TCR element-based heaters
US10872747B2 (en) 2018-08-08 2020-12-22 Lam Research Corporation Controlling showerhead heating via resistive thermal measurements
CN111238669B (zh) * 2018-11-29 2022-05-13 拓荆科技股份有限公司 用于半导体射频处理装置的温度测量方法
CN111383881B (zh) * 2018-12-27 2023-03-07 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体处理器及其温度调节方法
WO2021061461A1 (en) * 2019-09-23 2021-04-01 Lam Research Corporation Low temperature plasma enhanced chemical vapor deposition process including preheated showerhead
EP3843501B1 (en) * 2019-12-23 2022-10-19 Kanthal GmbH Methods and systems for cooling a heating element
CN113097097A (zh) * 2019-12-23 2021-07-09 中微半导体设备(上海)股份有限公司 等离子体刻蚀装置及其工作方法
US12278094B2 (en) * 2020-05-08 2025-04-15 Applied Materials, Inc. Methods and apparatus for processing a substrate
US20230088457A1 (en) * 2021-09-17 2023-03-23 Applied Materials, Inc. Energy efficiency improvement with continuous flow modulation in cluster tool
US12476094B2 (en) * 2021-09-27 2025-11-18 Applied Materials, Inc. Model-based characterization of plasmas in semiconductor processing systems
KR102669651B1 (ko) * 2021-10-27 2024-05-28 피에스케이 주식회사 기판 처리 장치
CN114151730B (zh) * 2021-12-13 2023-09-29 拓荆科技股份有限公司 提供气体切换的气体供应系统及气体切换的方法
JP2024056137A (ja) * 2022-10-10 2024-04-22 エフ イー アイ カンパニ 荷電粒子システムのための電力消費の低減

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US20060027169A1 (en) * 2004-08-06 2006-02-09 Tokyo Electron Limited Method and system for substrate temperature profile control
KR20070031915A (ko) * 2004-05-28 2007-03-20 램 리써치 코포레이션 복수 ｒｆ 주파수에 반응하는 전극을 갖는 플라즈마 처리기

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US5948283A (en) 1996-06-28 1999-09-07 Lam Research Corporation Method and apparatus for enhancing outcome uniformity of direct-plasma processes
JP2001118838A (ja) 1999-10-22 2001-04-27 Nec Kyushu Ltd プラズマｃｖｄ装置用クリーニング装置
KR20070031915A (ko) * 2004-05-28 2007-03-20 램 리써치 코포레이션 복수 ｒｆ 주파수에 반응하는 전극을 갖는 플라즈마 처리기
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Also Published As

Publication number Publication date
WO2010045538A3 (en) 2010-07-15
CN102187742A (zh) 2011-09-14
TW201021628A (en) 2010-06-01
JP2012506128A (ja) 2012-03-08
SG195553A1 (en) 2013-12-30
TWI533764B (zh) 2016-05-11
WO2010045538A2 (en) 2010-04-22
KR20110071125A (ko) 2011-06-28
US8895889B2 (en) 2014-11-25
US9155134B2 (en) 2015-10-06
US20100096109A1 (en) 2010-04-22
US20130180963A1 (en) 2013-07-18
CN102187742B (zh) 2014-06-18

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