JP2012506128A - プラズマ処理装置内における高速応答熱制御のための方法及び装置 - Google Patents

プラズマ処理装置内における高速応答熱制御のための方法及び装置 Download PDF

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Publication number
JP2012506128A
JP2012506128A JP2011532277A JP2011532277A JP2012506128A JP 2012506128 A JP2012506128 A JP 2012506128A JP 2011532277 A JP2011532277 A JP 2011532277A JP 2011532277 A JP2011532277 A JP 2011532277A JP 2012506128 A JP2012506128 A JP 2012506128A
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Prior art keywords
temperature
process chamber
flow
coolant
flow rate
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JP2011532277A
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Japanese (ja)
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JP2012506128A5 (enExample
Inventor
チュンレイ ジハング
リチャード フォベル
エズラ ロバート ゴールド
アジト バラクリシュナ
ジェームズ ピー クルーズ
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2012506128A5 publication Critical patent/JP2012506128A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B7/00—Heating by electric discharge
    • H05B7/18—Heating by arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/26—Plasma torches
    • H05H1/32—Plasma torches using an arc
    • H05H1/34—Details, e.g. electrodes, nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2011532277A 2008-10-17 2009-10-16 プラズマ処理装置内における高速応答熱制御のための方法及び装置 Pending JP2012506128A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/253,657 US9155134B2 (en) 2008-10-17 2008-10-17 Methods and apparatus for rapidly responsive heat control in plasma processing devices
US12/253,657 2008-10-17
PCT/US2009/060979 WO2010045538A2 (en) 2008-10-17 2009-10-16 Methods and apparatus for rapidly responsive heat control in plasma processing devices

Publications (2)

Publication Number Publication Date
JP2012506128A true JP2012506128A (ja) 2012-03-08
JP2012506128A5 JP2012506128A5 (enExample) 2014-10-02

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JP2011532277A Pending JP2012506128A (ja) 2008-10-17 2009-10-16 プラズマ処理装置内における高速応答熱制御のための方法及び装置

Country Status (7)

Country Link
US (2) US9155134B2 (enExample)
JP (1) JP2012506128A (enExample)
KR (1) KR101455249B1 (enExample)
CN (1) CN102187742B (enExample)
SG (1) SG195553A1 (enExample)
TW (1) TWI533764B (enExample)
WO (1) WO2010045538A2 (enExample)

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JP2019114653A (ja) * 2017-12-22 2019-07-11 東京エレクトロン株式会社 基板処理装置および温度制御方法
JP2021533568A (ja) * 2018-08-08 2021-12-02 ラム リサーチ コーポレーションLam Research Corporation 抵抗熱測定を介するシャワーヘッド加熱の制御
KR20230060330A (ko) * 2021-10-27 2023-05-04 피에스케이 주식회사 기판 처리 장치
JP2024056137A (ja) * 2022-10-10 2024-04-22 エフ イー アイ カンパニ 荷電粒子システムのための電力消費の低減

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JP5905735B2 (ja) * 2012-02-21 2016-04-20 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板温度の設定可能帯域の変更方法
US8901518B2 (en) 2012-07-26 2014-12-02 Applied Materials, Inc. Chambers with improved cooling devices
US10217615B2 (en) 2013-12-16 2019-02-26 Lam Research Corporation Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof
KR102395029B1 (ko) * 2015-08-07 2022-05-09 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN106922071B (zh) * 2015-12-25 2019-10-01 中微半导体设备(上海)股份有限公司 一种用于等离子反应装置的喷淋头加热冷却装置及方法
US11837479B2 (en) * 2016-05-05 2023-12-05 Applied Materials, Inc. Advanced temperature control for wafer carrier in plasma processing chamber
US9958782B2 (en) 2016-06-29 2018-05-01 Applied Materials, Inc. Apparatus for post exposure bake
KR102204229B1 (ko) * 2016-08-26 2021-01-15 어플라이드 머티어리얼스, 인코포레이티드 저압 리프트 핀 캐비티 하드웨어
TWI829367B (zh) 2017-11-16 2024-01-11 日商東京威力科創股份有限公司 電漿處理裝置、溫度控制方法及溫度控制程式
US11236422B2 (en) 2017-11-17 2022-02-01 Lam Research Corporation Multi zone substrate support for ALD film property correction and tunability
JP2021521648A (ja) * 2018-04-17 2021-08-26 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 加熱されるセラミック面板
US10633742B2 (en) 2018-05-07 2020-04-28 Lam Research Foundation Use of voltage and current measurements to control dual zone ceramic pedestals
CN118360588A (zh) 2018-07-05 2024-07-19 朗姆研究公司 衬底处理系统中的衬底支撑件的动态温度控制
US11183400B2 (en) 2018-08-08 2021-11-23 Lam Research Corporation Progressive heating of components of substrate processing systems using TCR element-based heaters
CN111238669B (zh) * 2018-11-29 2022-05-13 拓荆科技股份有限公司 用于半导体射频处理装置的温度测量方法
CN111383881B (zh) * 2018-12-27 2023-03-07 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体处理器及其温度调节方法
KR20220065843A (ko) * 2019-09-23 2022-05-20 램 리써치 코포레이션 예열된 샤워헤드를 포함하는 저온 플라즈마 강화된 화학적 기상 증착 (pecvd) 프로세스
CN113097097A (zh) * 2019-12-23 2021-07-09 中微半导体设备(上海)股份有限公司 等离子体刻蚀装置及其工作方法
EP3843501B1 (en) * 2019-12-23 2022-10-19 Kanthal GmbH Methods and systems for cooling a heating element
US12278094B2 (en) * 2020-05-08 2025-04-15 Applied Materials, Inc. Methods and apparatus for processing a substrate
US20230088457A1 (en) * 2021-09-17 2023-03-23 Applied Materials, Inc. Energy efficiency improvement with continuous flow modulation in cluster tool
US12476094B2 (en) 2021-09-27 2025-11-18 Applied Materials, Inc. Model-based characterization of plasmas in semiconductor processing systems
CN114151730B (zh) * 2021-12-13 2023-09-29 拓荆科技股份有限公司 提供气体切换的气体供应系统及气体切换的方法

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019114653A (ja) * 2017-12-22 2019-07-11 東京エレクトロン株式会社 基板処理装置および温度制御方法
JP7008497B2 (ja) 2017-12-22 2022-01-25 東京エレクトロン株式会社 基板処理装置および温度制御方法
JP2021533568A (ja) * 2018-08-08 2021-12-02 ラム リサーチ コーポレーションLam Research Corporation 抵抗熱測定を介するシャワーヘッド加熱の制御
JP7479344B2 (ja) 2018-08-08 2024-05-08 ラム リサーチ コーポレーション 抵抗熱測定を介するシャワーヘッド加熱の制御
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JP2024056137A (ja) * 2022-10-10 2024-04-22 エフ イー アイ カンパニ 荷電粒子システムのための電力消費の低減

Also Published As

Publication number Publication date
KR20110071125A (ko) 2011-06-28
US20130180963A1 (en) 2013-07-18
CN102187742A (zh) 2011-09-14
CN102187742B (zh) 2014-06-18
WO2010045538A3 (en) 2010-07-15
SG195553A1 (en) 2013-12-30
US8895889B2 (en) 2014-11-25
TW201021628A (en) 2010-06-01
TWI533764B (zh) 2016-05-11
US9155134B2 (en) 2015-10-06
WO2010045538A2 (en) 2010-04-22
KR101455249B1 (ko) 2014-10-27
US20100096109A1 (en) 2010-04-22

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