KR101445156B1 - 틸팅가능한 오버헤드 알에프 유도형 공급원을 구비한 플라즈마 반응기 - Google Patents

틸팅가능한 오버헤드 알에프 유도형 공급원을 구비한 플라즈마 반응기 Download PDF

Info

Publication number
KR101445156B1
KR101445156B1 KR1020127008338A KR20127008338A KR101445156B1 KR 101445156 B1 KR101445156 B1 KR 101445156B1 KR 1020127008338 A KR1020127008338 A KR 1020127008338A KR 20127008338 A KR20127008338 A KR 20127008338A KR 101445156 B1 KR101445156 B1 KR 101445156B1
Authority
KR
South Korea
Prior art keywords
support plate
plasma reactor
floating support
enclosure
shoulder ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020127008338A
Other languages
English (en)
Korean (ko)
Other versions
KR20120073260A (ko
Inventor
케네쓰 에스. 콜린스
앤드류 응우옌
제프리 마틴 새리나스
이매드 유시프
밍 수
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20120073260A publication Critical patent/KR20120073260A/ko
Application granted granted Critical
Publication of KR101445156B1 publication Critical patent/KR101445156B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211Antennas, e.g. particular shapes of coils
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020127008338A 2009-09-03 2010-06-11 틸팅가능한 오버헤드 알에프 유도형 공급원을 구비한 플라즈마 반응기 Active KR101445156B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US23971109P 2009-09-03 2009-09-03
US61/239,711 2009-09-03
US12/787,198 US8414736B2 (en) 2009-09-03 2010-05-25 Plasma reactor with tiltable overhead RF inductive source
US12/787,198 2010-05-25
PCT/US2010/038286 WO2011028312A1 (en) 2009-09-03 2010-06-11 Plasma reactor with tiltable overhead rf inductive source

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020137017437A Division KR101668587B1 (ko) 2009-09-03 2010-06-11 틸팅가능한 오버헤드 알에프 유도형 공급원을 구비한 플라즈마 반응기

Publications (2)

Publication Number Publication Date
KR20120073260A KR20120073260A (ko) 2012-07-04
KR101445156B1 true KR101445156B1 (ko) 2014-09-29

Family

ID=43623091

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020127008338A Active KR101445156B1 (ko) 2009-09-03 2010-06-11 틸팅가능한 오버헤드 알에프 유도형 공급원을 구비한 플라즈마 반응기
KR1020137017437A Active KR101668587B1 (ko) 2009-09-03 2010-06-11 틸팅가능한 오버헤드 알에프 유도형 공급원을 구비한 플라즈마 반응기

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020137017437A Active KR101668587B1 (ko) 2009-09-03 2010-06-11 틸팅가능한 오버헤드 알에프 유도형 공급원을 구비한 플라즈마 반응기

Country Status (6)

Country Link
US (2) US8414736B2 (https=)
JP (2) JP5705224B2 (https=)
KR (2) KR101445156B1 (https=)
CN (2) CN103426711B (https=)
TW (2) TWI446440B (https=)
WO (1) WO2011028312A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9016289B2 (en) * 2011-11-28 2015-04-28 Intermolecular, Inc. System and method for reducing particles and marks on wafer surface following reactor processing
TW201405627A (zh) * 2012-07-20 2014-02-01 Applied Materials Inc 具有同軸rf饋送及同軸遮罩之對稱的感應性耦合電漿源
CN103060778B (zh) * 2013-01-23 2015-03-11 深圳市劲拓自动化设备股份有限公司 平板式pecvd装置
US20140262044A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc. Mu metal shield cover
CN105340059B (zh) 2013-06-17 2019-03-22 应用材料公司 用于等离子体反应器的增强等离子体源
US9305748B2 (en) 2013-10-04 2016-04-05 Applied Materials, Inc. Method of matching two or more plasma reactors
US9184021B2 (en) * 2013-10-04 2015-11-10 Applied Materials, Inc. Predictive method of matching two plasma reactors
US10249475B2 (en) * 2014-04-01 2019-04-02 Applied Materials, Inc. Cooling mechanism utlized in a plasma reactor with enhanced temperature regulation
KR101753620B1 (ko) * 2015-03-19 2017-07-19 맷슨 테크놀로지, 인크. 플라즈마 처리 챔버에서의 에칭 프로세스의 방위 방향 균일성 제어
JP5977853B1 (ja) * 2015-03-20 2016-08-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
JP6424120B2 (ja) * 2015-03-23 2018-11-14 東京エレクトロン株式会社 電源システム、プラズマ処理装置及び電源制御方法
US10032604B2 (en) 2015-09-25 2018-07-24 Applied Materials, Inc. Remote plasma and electron beam generation system for a plasma reactor
US11749509B2 (en) * 2017-02-20 2023-09-05 Beijing E-Town Semiconductor Technology, Co., Ltd Temperature control using temperature control element coupled to faraday shield
US10190216B1 (en) * 2017-07-25 2019-01-29 Lam Research Corporation Showerhead tilt mechanism
KR102309660B1 (ko) * 2019-11-21 2021-10-07 주식회사 유진테크 기판 처리 장치
JP7680476B2 (ja) * 2020-06-23 2025-05-20 ラム リサーチ コーポレーション 自動シャワーヘッド傾斜調整
EP4238122A4 (en) * 2020-10-29 2024-09-18 Board of Regents, The University of Texas System Equipment and process technologies for catalyst influenced chemical etching

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003234293A (ja) 2002-02-06 2003-08-22 Canon Inc ヘリコン波プラズマ装置及びヘリコン波プラズマ処理方法
US20050034815A1 (en) 2001-12-14 2005-02-17 Shigeru Kasai Plasma processor
US20070256787A1 (en) 2006-05-03 2007-11-08 Applied Materials, Inc. Plasma reactor with a dynamically adjustable plasma source power applicator

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5280154A (en) * 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
US5433812A (en) * 1993-01-19 1995-07-18 International Business Machines Corporation Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
US5387288A (en) * 1993-05-14 1995-02-07 Modular Process Technology Corp. Apparatus for depositing diamond and refractory materials comprising rotating antenna
US5855681A (en) * 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
US6229264B1 (en) * 1999-03-31 2001-05-08 Lam Research Corporation Plasma processor with coil having variable rf coupling
KR100291898B1 (ko) * 1999-04-09 2001-06-01 윤종용 스파터 오염원을 감소시키고 플라즈마에 유도 결합을 향상시키기위한 차폐판의 제조방법 및 플라즈마 식각장치
US6507155B1 (en) * 2000-04-06 2003-01-14 Applied Materials Inc. Inductively coupled plasma source with controllable power deposition
JP3462865B2 (ja) * 2001-07-10 2003-11-05 三菱重工業株式会社 給電アンテナ及び半導体製造装置
US7223321B1 (en) * 2002-08-30 2007-05-29 Lam Research Corporation Faraday shield disposed within an inductively coupled plasma etching apparatus
JP2004172243A (ja) * 2002-11-19 2004-06-17 Nec Kansai Ltd ドライエッチング装置
US7713432B2 (en) * 2004-10-04 2010-05-11 David Johnson Method and apparatus to improve plasma etch uniformity
KR100777151B1 (ko) * 2006-03-21 2007-11-16 주식회사 디엠에스 하이브리드형 플라즈마 반응장치
US7504041B2 (en) * 2006-05-03 2009-03-17 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor employing a dynamically adjustable plasma source power applicator
US7829815B2 (en) * 2006-09-22 2010-11-09 Taiwan Semiconductor Manufacturing Co., Ltd. Adjustable electrodes and coils for plasma density distribution control
US8223470B2 (en) * 2006-10-10 2012-07-17 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method to improve uniformity and reduce local effect of process chamber
US7732728B2 (en) * 2007-01-17 2010-06-08 Lam Research Corporation Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
US8062472B2 (en) * 2007-12-19 2011-11-22 Applied Materials, Inc. Method of correcting baseline skew by a novel motorized source coil assembly
US8999106B2 (en) * 2007-12-19 2015-04-07 Applied Materials, Inc. Apparatus and method for controlling edge performance in an inductively coupled plasma chamber

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050034815A1 (en) 2001-12-14 2005-02-17 Shigeru Kasai Plasma processor
JP2003234293A (ja) 2002-02-06 2003-08-22 Canon Inc ヘリコン波プラズマ装置及びヘリコン波プラズマ処理方法
US20070256787A1 (en) 2006-05-03 2007-11-08 Applied Materials, Inc. Plasma reactor with a dynamically adjustable plasma source power applicator

Also Published As

Publication number Publication date
CN102576672A (zh) 2012-07-11
US8414736B2 (en) 2013-04-09
JP2013211580A (ja) 2013-10-10
KR20120073260A (ko) 2012-07-04
TWI446440B (zh) 2014-07-21
KR101668587B1 (ko) 2016-10-24
US9330887B2 (en) 2016-05-03
CN102576672B (zh) 2015-06-17
KR20130083489A (ko) 2013-07-22
CN103426711B (zh) 2016-04-27
JP5789281B2 (ja) 2015-10-07
US20110048644A1 (en) 2011-03-03
TWI500082B (zh) 2015-09-11
WO2011028312A1 (en) 2011-03-10
CN103426711A (zh) 2013-12-04
JP2013504159A (ja) 2013-02-04
TW201342470A (zh) 2013-10-16
US20130206594A1 (en) 2013-08-15
JP5705224B2 (ja) 2015-04-22
TW201126595A (en) 2011-08-01

Similar Documents

Publication Publication Date Title
KR101445156B1 (ko) 틸팅가능한 오버헤드 알에프 유도형 공급원을 구비한 플라즈마 반응기
CN102054649B (zh) 等离子体处理装置以及等离子体处理方法
CN101375377B (zh) 具有动态可调整等离子源功率施加器的等离子反应器
KR102009595B1 (ko) 플라즈마 처리 챔버에서 갭 높이 및 평탄화 조정을 제공하는 기판 서포트
KR101564550B1 (ko) 동적 조절가능한 플라즈마 소스 전력 공급기를 갖춘 플라즈마 반응기
TWI595808B (zh) Plasma processing apparatus and plasma processing method
KR102141255B1 (ko) 플라즈마 프로세싱 챔버에서 플라즈마를 제어하기 위한 방법들 및 장치
KR102148350B1 (ko) 구조 변형이 가능한 플라즈마 소스 코일 및 이의 조정 방법
US20070256784A1 (en) Plasma reactor with apparatus for dynamically adjusting the plasma source power applicator and the workpiece relative to one another
KR20200089616A (ko) 플라즈마 처리 장치, 및 링 부재의 위치 어긋남 측정 방법
JP2020136622A (ja) 調整用冶具、調整方法及び位置ずれ測定方法
KR102956350B1 (ko) 기판 처리 장치
US20260088264A1 (en) Substrate treating apparatus and semiconductor manufacturing equipment including the same
CN113782409B (zh) 可改变结构的等离子体源线圈及其调整方法
WO2026088833A1 (ja) プラズマ処理装置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

A107 Divisional application of patent
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000