KR101441705B1 - 포토레지스트용 반사 방지 조성물 - Google Patents

포토레지스트용 반사 방지 조성물 Download PDF

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Publication number
KR101441705B1
KR101441705B1 KR1020097003758A KR20097003758A KR101441705B1 KR 101441705 B1 KR101441705 B1 KR 101441705B1 KR 1020097003758 A KR1020097003758 A KR 1020097003758A KR 20097003758 A KR20097003758 A KR 20097003758A KR 101441705 B1 KR101441705 B1 KR 101441705B1
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South Korea
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polymer
propylene
group
composition
aliphatic
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KR1020097003758A
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English (en)
Korean (ko)
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KR20090038020A (ko
Inventor
헹펭 유
종 지앙
홍 쯔앙
지안후이 샨
지안 음
후이롱 야오
핑-흥 루
Original Assignee
에이제토 엘렉토로닉 마티리알즈 아이피 (재팬) 가부시키가이샤
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Publication of KR20090038020A publication Critical patent/KR20090038020A/ko
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Assigned to 메르크 파텐트 게엠베하 reassignment 메르크 파텐트 게엠베하 권리의 전부이전등록 Assignors: 에이제토 엘렉토로닉 마티리알즈 아이피 (재팬) 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer

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  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polyesters Or Polycarbonates (AREA)
KR1020097003758A 2006-08-10 2007-08-07 포토레지스트용 반사 방지 조성물 Active KR101441705B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/502,706 2006-08-10
US11/502,706 US7638262B2 (en) 2006-08-10 2006-08-10 Antireflective composition for photoresists
PCT/IB2007/002340 WO2008017954A2 (en) 2006-08-10 2007-08-07 Antireflective composition for photoresists

Publications (2)

Publication Number Publication Date
KR20090038020A KR20090038020A (ko) 2009-04-17
KR101441705B1 true KR101441705B1 (ko) 2014-09-18

Family

ID=38740457

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097003758A Active KR101441705B1 (ko) 2006-08-10 2007-08-07 포토레지스트용 반사 방지 조성물

Country Status (8)

Country Link
US (1) US7638262B2 (https=)
EP (1) EP2052293B1 (https=)
JP (1) JP5453615B2 (https=)
KR (1) KR101441705B1 (https=)
CN (1) CN101501572A (https=)
MY (1) MY145421A (https=)
TW (1) TWI417668B (https=)
WO (1) WO2008017954A2 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
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US7824844B2 (en) * 2007-01-19 2010-11-02 Az Electronic Materials Usa Corp. Solvent mixtures for antireflective coating compositions for photoresists
US20080286689A1 (en) * 2007-05-14 2008-11-20 Hong Zhuang Antireflective Coating Compositions
US20090035704A1 (en) * 2007-08-03 2009-02-05 Hong Zhuang Underlayer Coating Composition Based on a Crosslinkable Polymer
US8039201B2 (en) * 2007-11-21 2011-10-18 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
WO2009104685A1 (ja) 2008-02-21 2009-08-27 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
US8221965B2 (en) 2008-07-08 2012-07-17 Az Electronic Materials Usa Corp. Antireflective coating compositions
US8329387B2 (en) * 2008-07-08 2012-12-11 Az Electronic Materials Usa Corp. Antireflective coating compositions
KR100997502B1 (ko) * 2008-08-26 2010-11-30 금호석유화학 주식회사 개환된 프탈릭 언하이드라이드를 포함하는 유기 반사 방지막 조성물과 이의 제조방법
US20100092894A1 (en) * 2008-10-14 2010-04-15 Weihong Liu Bottom Antireflective Coating Compositions
US8551686B2 (en) * 2009-10-30 2013-10-08 Az Electronic Materials Usa Corp. Antireflective composition for photoresists
US8507192B2 (en) * 2010-02-18 2013-08-13 Az Electronic Materials Usa Corp. Antireflective compositions and methods of using same
US8465902B2 (en) 2011-02-08 2013-06-18 Az Electronic Materials Usa Corp. Underlayer coating composition and processes thereof
WO2013163100A1 (en) 2012-04-23 2013-10-31 Brewer Science Inc. Photosensitive, developer-soluble bottom anti-reflective coating material
US9170494B2 (en) 2012-06-19 2015-10-27 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective compositions and methods of using same
KR102011446B1 (ko) 2013-02-26 2019-10-14 삼성전자주식회사 반도체 소자의 박막 패턴 형성 방법
KR101982103B1 (ko) 2015-08-31 2019-05-27 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 오버코팅된 포토레지스트와 함께 사용하기 위한 코팅 조성물
WO2017130896A1 (ja) 2016-01-26 2017-08-03 株式会社Adeka 熱酸発生剤およびこれを用いたレジスト組成物
KR102487404B1 (ko) * 2017-07-26 2023-01-12 에스케이이노베이션 주식회사 바닥반사 방지막 형성용 중합체 및 이를 포함하는 바닥반사 방지막 형성용 조성물
KR102288386B1 (ko) 2018-09-06 2021-08-10 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법
DE102020131427B4 (de) * 2020-05-21 2024-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresistzusammensetzung und Herstellungsverfahren von Photoresiststruktur
KR102675074B1 (ko) * 2020-11-20 2024-06-12 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
CN116814119A (zh) * 2023-07-03 2023-09-29 长鑫存储技术有限公司 底部抗反射涂层组合物、图案形成方法

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US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
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Also Published As

Publication number Publication date
TW200811602A (en) 2008-03-01
JP2010500607A (ja) 2010-01-07
KR20090038020A (ko) 2009-04-17
MY145421A (en) 2012-02-15
US20080038659A1 (en) 2008-02-14
CN101501572A (zh) 2009-08-05
WO2008017954A2 (en) 2008-02-14
TWI417668B (zh) 2013-12-01
EP2052293A2 (en) 2009-04-29
EP2052293B1 (en) 2013-03-13
WO2008017954A3 (en) 2008-04-10
JP5453615B2 (ja) 2014-03-26
US7638262B2 (en) 2009-12-29

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