KR101420790B1 - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device Download PDF

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Publication number
KR101420790B1
KR101420790B1 KR1020120139325A KR20120139325A KR101420790B1 KR 101420790 B1 KR101420790 B1 KR 101420790B1 KR 1020120139325 A KR1020120139325 A KR 1020120139325A KR 20120139325 A KR20120139325 A KR 20120139325A KR 101420790 B1 KR101420790 B1 KR 101420790B1
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South Korea
Prior art keywords
light emitting
emitting portion
semiconductor layer
electrode
substrate
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KR1020120139325A
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Korean (ko)
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KR20140071594A (en
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김태현
전수근
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주식회사 세미콘라이트
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors

Abstract

The present disclosure relates to a quadrangular substrate; A first semiconductor layer positioned below the active layer and having a first conductivity, and a second semiconductor layer disposed on the active layer and having a second conductivity different from the first conductivity, A first light emitting portion and a second light emitting portion; A separation passage formed so as to expose the substrate in the form of diagonally crossing the substrate, the separation passage separating the first light emitting portion and the second light emitting portion; And a connection electrode electrically connecting the first light emitting portion and the second light emitting portion across the separation passage, wherein the first light emitting portion and the second light emitting portion each have a first side in contact with the separation passage, Wherein the first side and the second side are formed in a triangular shape having three sides including a first side and a second side, and the third side including a second side and a third side.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates generally to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device having improved light efficiency.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts.

1 is a view showing an example of a conventional Group III nitride semiconductor light emitting device. The III-nitride semiconductor light emitting device includes a substrate 10 (e.g., sapphire substrate), a buffer layer 20 grown on the substrate 10, an n-type III-nitride semiconductor layer 30 grown on the buffer layer 20, The active diffusion layer 40 formed on the p-type III nitride semiconductor layer 30 and the p-type III-nitride semiconductor layer 50 grown on the active layer 40, The p-side bonding pad 70 formed on the current spreading film 60, the p-type III-nitride semiconductor layer 50, and the active layer 40 are exposed in an mesa-etching manner to form an n-type III- An n-side bonding pad 80 formed on the substrate 30, and a protective film 90.

The buffer layer 20 is intended to overcome the difference between the lattice constant and the thermal expansion coefficient between the substrate 10 and the n-type III nitride semiconductor layer 30. In U.S. Patent No. 5,122,845, US Pat. No. 5,290,393 discloses a technique of growing an AlN buffer layer having a thickness of 100 ANGSTROM to 500 ANGSTROM at a temperature of 200 to 900 DEG C, 1-x) N (0 < x < 1) buffer layer is disclosed in US Patent Application Publication No. 2006/154454, and a SiC buffer layer (seed layer) is grown at a temperature of 600 캜 to 990 캜 And growing an In (x) Ga (1-x) N (0 &lt; x? 1) layer thereon. A GaN layer which is not doped is grown before the growth of the n-type III-nitride semiconductor layer 30, which may be regarded as a part of the buffer layer 20 or a part of the n-type III-nitride semiconductor layer 30 .

The current diffusion conductive film 60 is provided to supply current to the entire p-type III nitride semiconductor layer 50 well. The current diffusion conductive film 60 is formed over substantially the entire surface of the p-type III nitride semiconductor layer 50. For example, ITO, ZnO, or Ni and Au may be used to form the light-transmitting conductive film, or Ag may be used Thereby forming a reflective conductive film.

The p-side bonding pad 70 and the n-side bonding pad 80 are metal electrodes for supplying a current and for wire bonding to the outside, for example, nickel, gold, silver, chromium, titanium, platinum, , Iridium, aluminum, tin, indium, tantalum, copper, cobalt, iron, ruthenium, zirconium, tungsten, molybdenum or any combination thereof.

The protective film 90 is formed of a material such as silicon dioxide and may be omitted.

The p-side bonding pad 70 is generally formed in direct contact with the p-type III-nitride semiconductor layer 50 or in contact with the current diffusion conductive film 60. However, it is known that bonding strength between the p-type nitride semiconductor layer 50 and the p-side bonding pad 70 or the current diffusion conductive film 60 is poor. Therefore, the p-side bonding pads 70 (or 70) can be used in a post process such as a wire bonding process, a grinding process for sapphire, a breaking process for separating into individual chips, a characteristic measurement and a chip sorting process. ) May peel off.

In addition, since the p-side bonding pad 70 is thicker than the light-permeable current diffusion film 60 and has a large light absorption loss, the light extraction efficiency of the group III nitride semiconductor light emitting device is lowered.

In addition, in a typical light emitting diode (LED) structure, the p-side bonding pad 70 is formed on the active layer on which light is formed, so that the active layer may be damaged by an impact during the wire bonding process. There is a possibility that the reliability of the light emitting diode is deteriorated.

2 is a view showing an example of a semiconductor light emitting device including a plurality of light emitting portions connected in series with a conventional single substrate.

Due to various advantages, as shown in Fig. 2, a semiconductor light emitting element in which a plurality of light emitting portions A and B are connected in series on a single substrate is used. For example, when a plurality of light emitting portions A and B are connected in series on a single substrate, the number of wires for connection with an external circuit is reduced, thereby reducing the light absorption loss due to the wires. In addition, since the operating voltage of the entire light emitting units A and B connected in series increases, the power supply circuit can be further simplified. In addition, as compared with the case where the individual semiconductor light emitting devices are connected in series, the occupied area is small and the mounting density can be improved. Therefore, miniaturization is possible when a lighting device or the like including the semiconductor light emitting device is constructed.

2, the conventional semiconductor light emitting device includes a plurality of n-type III-nitride semiconductor layers 30 grown on a substrate 10, an n-type III-nitride semiconductor layer 30, A plurality of semiconductor layers including an active layer 40 grown on the substrate 30 and a p-type III-nitride semiconductor layer 50 grown on the active layer 40 are etched until the substrate 10 is exposed And may be formed through an isolation process to achieve electrical isolation and shape separation. The plurality of separated light emitting portions A and B are connected to each other in such a manner as to connect one p-side electrode 70 and one n-side electrode 80 of two neighboring light emitting portions A and B, And may be connected in series through the electrode 75.

This will be described later in the Specification for Implementation of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, a rectangular substrate; A first semiconductor layer positioned below the active layer and having a first conductivity, and a second semiconductor layer disposed on the active layer and having a second conductivity different from the first conductivity, A first light emitting portion and a second light emitting portion; A separation passage formed so as to expose the substrate in the form of diagonally crossing the substrate, the separation passage separating the first light emitting portion and the second light emitting portion; And a connection electrode electrically connecting the first light emitting portion and the second light emitting portion across the separation passage, wherein the first light emitting portion and the second light emitting portion each have a first side in contact with the separation passage, Wherein the first and second sides are formed in a triangular shape having three sides including a second side and a third side.

This will be described later in the Specification for Implementation of the Invention.

FIG. 1 is a view showing an example of a conventional Group III nitride semiconductor light emitting device,
2 is a view showing an example of a semiconductor light emitting device including a plurality of light emitting portions connected in series with a conventional single substrate,
3 is a view showing an example of a semiconductor light emitting device according to the present disclosure,
FIG. 4 is a cross-sectional view of the semiconductor light emitting device shown in FIG. 3 taken along line AA,
5 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
FIG. 6 is a cross-sectional view of the semiconductor light emitting device shown in FIG. 5 taken along the line BB,
Fig. 7 is a view showing another example of the semiconductor light emitting device according to the present disclosure corresponding to Fig. 6; Fig.

The present disclosure will now be described in detail with reference to the accompanying drawings.

FIG. 3 is a view showing an example of a semiconductor light emitting device according to the present disclosure, and FIG. 4 is a sectional view taken along line A - A of the semiconductor light emitting device shown in FIG.

The semiconductor light emitting device 100 includes a rectangular substrate 110, a triangular first light emitting portion 103, a triangular second light emitting portion 105, a first light emitting portion 103 and a second light emitting portion 105 And a connection electrode 102 connecting the first light emitting portion 103 and the second light emitting portion 105 across the separation passage 101 and the separation passage 101 diagonally across the substrate 110 do.

The first light emitting portion 103 and the second light emitting portion 105 each include a plurality of semiconductor layers. The plurality of semiconductor layers includes a buffer layer 120, a first semiconductor layer 130, an active layer 140, and a second semiconductor layer 150. The first light emitting portion 103 and the second light emitting portion 105 have first sides 111 and 116 which are in contact with the separation passage 101 and second sides 112 and 117 which are not in contact with the separation passage 101, And three sides including three sides (113, 118).

A plurality of semiconductor layers including a buffer layer 120, a first semiconductor layer 130, an active layer 140, and a second semiconductor layer 150 are formed on a substrate 110. The semiconductor layers which are epitaxially grown on the substrate 110 are mainly grown by metal organic chemical vapor deposition (MOCVD), and each layer may again include sub-layers as required.

Thereafter, in an isolation process for electrical insulation, a plurality of semiconductor layers in regions excluding the first light emitting portion 103 and the second light emitting portion 105 are removed by etching to form the first light emitting portion 103 and the second light emitting portion 105, 2 light emitting portion 105 is formed on the substrate 110 with the separation passage 101 therebetween. More specifically, in the separation process, the substrate 110 is arranged diagonally at a portion where the first side 111 of the first light emitting portion 103 and the first side 116 of the second light emitting portion 105 face each other The first light emitting portion 103 and the second light emitting portion 105 are separated from each other.

It is preferable that the substrate 110 is exposed only in the region of the isolation passage 101 and the regions other than the isolation passage 101 are all covered by the first light emitting portion 103 and the second light emitting portion 105. The fact that all the regions on the substrate 110 excluding the region of the isolation passage 101 are covered by the first light emitting portion 103 and the second light emitting portion 105 means that the relative positions of the light emitting portions 103 and 105 It means that the area of the active layer 140 included in each of the light emitting units 103 and 105 is increased along with the increase of the area and thus the light extraction efficiency is improved. As a method of removing a plurality of semiconductor layers, a dry etching method, for example, ICP (Inductively Coupled Plasma), may be used.

Hereinafter, the case where the buffer layer 120, the first semiconductor layer 130, the second semiconductor layer 150, and the active layer 140 are formed of a III-V compound semiconductor and Al (x) Ga (y) -xy) N (0? x? 1, 0? y? 1, 0? x + y? 1).

The first semiconductor layer 130 has a first conductivity and the second semiconductor layer 150 has a second conductivity different from the first conductivity. In this example, for example, the first semiconductor layer 130 is an n-type nitride semiconductor layer 130 (for example, an n-type GaN layer) and the second semiconductor layer 150 is a p- ; For example, a p-type GaN layer).

As the substrate 110, a GaN-based substrate, a sapphire substrate, a SiC substrate, a Si substrate, or the like is used as the different type substrate, but any substrate may be used as long as it is a substrate on which a group III nitride semiconductor layer can be grown.

The buffer layer 120 is intended to overcome the difference in lattice constant and thermal expansion coefficient between the substrate 110 and the Group III nitride semiconductor. The buffer layer 120 is made of, for example, the III-V group compound semiconductor and includes a low-temperature buffer layer and an un-GaN layer formed on the low-temperature buffer layer.

Subsequently, portions of the p-type nitride semiconductor layer 150 and the active layer 140 of the first light emitting portion 103 and the second light emitting portion 105 are mesa-etched to expose the n-type nitride semiconductor layer 130 Contact regions 132 and 134, i.e., n-contact regions 132 and 134, are formed for electrical connection to be formed. Specifically, the n-contact regions 132 and 134 are formed at the first side 111 side of the first light emitting portion 103 and at the corner where the second side 117 and the third side 118 of the second light emitting portion 105 meet The second semiconductor layer 150 and the active layer 140 are partially removed to expose the first semiconductor layer 130.

More specifically, in the mesa etching process, n-contact regions 132 and 134 for placing n-side electrodes are formed, and the n-type nitride semiconductor layer 130 is exposed only in the n- contact regions 132 and 134 and the n-type nitride semiconductor layer 130 except for the n-contact regions 132 and 134 are all covered by the active layer 140 and the p-type nitride semiconductor layer 150. The fact that all the regions on the n-type nitride semiconductor layer 130 except the n-contact regions 132 and 134 are covered by the active layer 140 and the p-type nitride semiconductor layer 150 as described above means that the n- The decrease in the area of the active layer 140 in the mesa etching process for forming the regions 132 and 134 is minimized, and thus the effect of improving the light extraction efficiency can be obtained.

Subsequently, the p-type nitride semiconductor layer 103 of the first light emitting portion 103 and the second light emitting portion 105 is etched by using a sputtering method, an E-beam evaporation method, a thermal evaporation method, A current diffusion conductive film 160 is formed on the gate electrode 150. Alternatively, the above-described mesa etching process may be performed after the current diffusion conductive film 160 is formed. The current diffusion conductive film 160 improves the uniformity of the current density of the p-type nitride semiconductor layer 150 as a whole so as to emit light. The current diffusion conductive film 160 is mainly formed of ITO, ZnO, or Ni / Au.

An insulator 190 is formed on the side of the first side 116 of the second light emitting portion 105 adjacent to the isolation passage 101 by using SiO 2 , SiN 2 , SiNO x, or the like. The insulator 190 may extend to the side of the substrate 110 in the region of the isolation passage 101 and the first side 111 side of the first light emitting portion 103.

Next, an electrode is formed by a method such as a sputtering method, an electron beam evaporation method (Ebeam evaporation), or a thermal evaporation method.

the n side branch electrodes 183 are formed to extend from the n-contact region 132 of the first light emitting portion 103 to the vicinity of the first side 111 of the first light emitting portion 103 on the side of the separation passage 101 And the n-side pad electrode 180 and the pair of n-side auxiliary branch electrodes 185 are formed in the n-contact region 134 of the second light emitting portion 105. Specifically, the n-side pad electrode 180 is formed on the n-contact region 134 on the corner side where the second side 117 and the third side 118 of the second light emitting portion 105 meet, Side auxiliary branch electrode 185 is formed on the n-contact region 134 in parallel with the second side 117 and the third side 118, extending from the n-side pad electrode 180. The n- In this example, the n-side auxiliary branch electrodes 185 are provided as a pair, but they can be increased or decreased as needed, and may be deleted in some cases. contact region 134 formed around the corner side where the second side 117 and the third side 118 of the second light emitting portion meet in accordance with the arrangement and number of the n side auxiliary branch electrodes 185, The shape may be changed.

the p-side pad electrode 170 and the p-side auxiliary branch electrode 173 are formed on the current diffusion conductive film 160 of the first light emitting portion 103 and the p-side branch electrode 175 is formed on the second light emitting portion 105 Of the second light emitting portion 105 on the side of the isolation passage 101 on the current diffusion conductive film 160 of the first light emitting portion 105. [ Specifically, the p-side pad electrode 170 is formed on the corner side where the second side 112 and the third side 113 of the first light emitting portion 103 meet, and a pair of the p-side auxiliary branch electrodes 173 Is formed to extend from the p-side pad electrode 170 and to be in parallel with the second side 112 and the third side 113. The p-side branch electrode 175 is formed so as to gradually move toward the n-contact region 134 of the second light emitting portion 105 from the central portion connected to the connecting electrode 102 to the both end portions for smooth current diffusion It can be formed to be bent.

The shape and position of the branch electrode, auxiliary branch electrode, and pad electrode may be changed or deleted depending on the size, shape, etc. of the semiconductor light emitting device.

The connection electrodes 102 are formed together in the process of forming the electrodes. The connection electrode 102 electrically connects the n-type nitride semiconductor layer 130 of the first light emitting portion 103 and the p-type nitride semiconductor layer 150 of the second light emitting portion 105. Therefore, the first light emitting portion 103 and the second light emitting portion 105 are electrically connected in series by the connection electrode 102. The connection electrode 102 is electrically connected to the n-side branch electrode 183 in the n-contact region 132 of the first light emitting portion 103. The connection electrode 102 is electrically connected to the first side 111 side side of the first light emitting portion 103, the upper surface of the substrate 110 in the region of the isolation passage 101, The current spreading conductive film 160 of the second light emitting portion 105 is electrically connected to the p side branch electrode 175 along the side of the first side 116 of the first light emitting portion 105. [

As described above, since the first light emitting portion 103 and the second light emitting portion 105 are formed in a triangular shape, the light extraction efficiency can be enhanced as compared with the conventional rectangular shape.

FIG. 5 is a view showing another example of the semiconductor light emitting device according to the present disclosure, and FIG. 6 is a cross-sectional view of the semiconductor light emitting device shown in FIG. 5 taken along the line B-B.

The semiconductor light emitting device 300 is configured such that the first light emitting portion 303 has the pad body 306 on the corner side where the second side 312 and the third side 313 meet, And a pair of connecting branch electrodes 373 for electrically connecting the pad body 306 and the light emitting unit 308. The pair of connecting branch electrodes 373 are electrically connected to the light emitting unit 308, Is similar to the semiconductor light emitting device 100 described in Figs. 3 and 4 except that it is formed across the dividing passages. Therefore, redundant description is omitted.

The first light emitting portion 303 is divided into a corner portion side pad body 306 where the second side 312 and the third side 313 meet and a light emitting body 308 on the first side 311 side, A partitioning passage 307 is formed between the light emitting body 306 and the light emitting body 308. The partitioning passageway is formed on the p-type nitride semiconductor layer 350, the active layer 340, the n-type nitride semiconductor layer 330, and the buffer layer (not shown) in the region excluding the light emitter 308 and the pad body 306 on the first light- The light emitting body 308 and the pad body 306 are formed on the substrate 310 so as to be apart from each other. The partitioning passages 307 may be formed together in the separation process, that is, the dry etching process, performed to form the separation passages 301 between the first light emitting portion 303 and the second light emitting portion 305.

The pad body 306 and the light emitting body 308 are formed of a plurality of semiconductor layers each including a p-type nitride semiconductor layer 350, an active layer 340, an n-type nitride semiconductor layer 330 and a buffer layer 320. As shown in Fig. 5, the planar shape of the pad body 306 may be formed into a fan-like shape in which a circle is divided into four, or may have another shape. A p-side pad electrode 370 is formed on the pad body 306 and the pad body 306 and the light emitting body 308 are electrically connected through a connecting branch electrode 373 extending from the p-side pad electrode 370 . The branch branch electrodes 373 are formed as a pair and are formed so as to extend in parallel with the second side 312 and the third side 313 of the first light emitting portion 303.

An insulator 395 is formed prior to formation of the connecting branch electrodes 373. [ The insulator 395 prevents a short between the connecting branch electrode 373 and the n-type nitride semiconductor layer 330 of the light emitting body 308 and the active layer 340. The insulator 395 is formed by a PECVD or LPCVD method using SiO 2 , SiN 2 , SiNO x, or the like on at least the side of the light emitting body 308 on the side adjacent to the partitioning passage 307. The insulator 395 may extend to the upper surface of the substrate 310 in the region of the divided passage 307 and the side of the divided passage side of the pad body 306.

The connecting branch electrodes 373 are then formed together in the process of forming the other electrodes. The connecting branch electrode 373 electrically connects the p-type nitride semiconductor layer 350 of the pad body 306 and the p-type nitride semiconductor layer 350 of the light emitting body 308. Accordingly, the pad body 306 and the light emitting body 308 are electrically connected in series by the connecting branch electrode 373. [ The connecting branch electrode 373 is formed on the side of the side of the dividing passages 307 of the pad body 306 on the insulator 395 and the upper face of the substrate 310 in the region of the dividing passages 307 and the dividing passages 307 ) Side surface of the light emitting body 308 over the current diffusion conductive film 360 of the light emitting body 308. [

In this example, the connecting branch electrode 373 is provided as a pair, but may be increased or decreased as necessary. Further, the shape of the branched electrodes 75 of the connecting branch electrodes 373 may be variously changed.

As described above, the first light emitting portion 303 is divided into the light emitting body 308 and the padding body 306, thereby providing various advantages. A negative charge is applied to the n-side pad electrode 380 and a positive charge is applied to the p-side pad electrode 370. A wire for supplying charge is bonded to the n-side pad electrode 380 and the p- . Since the p-side pad electrode 370 is formed outside the light emitting body 308, absorption of light by the p-side pad electrode 370 is reduced to increase the light extraction efficiency of the semiconductor light emitting element 300. In addition, since the p-side pad electrode 370 is formed outside the light emitting body 308 and the wire bonding is formed thereon, the probability of damage to the light emitting body 308 by the wire bonding operation can be completely eliminated, Can be further improved.

7 is a view showing another example of the semiconductor light emitting device according to the present disclosure corresponding to Fig.

5 and 6 except that the pad body 506 includes only the buffer layer 520 and the n-type nitride semiconductor layer 530, unlike the light emitting body 508. In the semiconductor light emitting element 500, Device 300. &lt; / RTI &gt; Therefore, redundant description is omitted.

7, the pad body 506 is etched in the same manner as the n-contact region 532 of the light emitting body 508 to remove the p-type nitride semiconductor layer 550 and the active layer 540, (530) and a buffer layer (520). Preferably, the pad body 506 is simultaneously etched in an inevitable etching process to form n-contact regions 532 and 534. Therefore, it is not necessary to fabricate a separate photolithography process mask for forming the pad body 506. Since the surface of the pad body 506 is the same as the exposed n-type nitride semiconductor layer 530 of the light emitting body 508, 506). &Lt; / RTI &gt; Therefore, in manufacturing the semiconductor light emitting device 500, the p-side pad electrode 170 is formed on the first light emitting portion 103 as shown in Fig. 3 without the divided pad body 506 The p-side pad electrode 570 can be formed in the same manner as the p-type nitride semiconductor layer 350 shown in Figs. 5 and 6 or the current diffusion shown in Figs. 3 and 4 The n-type nitride semiconductor layer 530 can be formed on the n-type nitride semiconductor layer 530 having a better bonding force than the conductive film 160.

More specifically, the n-type nitride semiconductor layer 530 is formed on the p-side pad electrode 570 and the n-side pad electrode 580 in comparison with the p-type nitride semiconductor layer 550 and the current diffusion electrode 560, Bond strength is good. Accordingly, the p-side pad electrode 570 is formed on the pad body 506 outside the light emitting body 508, thereby significantly reducing defects such as peeling of the p-side pad electrode 570 in a subsequent process such as a wire bonding process.

Hereinafter, various embodiments of the present disclosure will be described.

(1) an electrical connection in which the second semiconductor layer and a part of the active layer are removed on the first side of the first light emitting portion and on the side of the edge where the second side and the third side of the second light emitting portion meet, And a contact region for the semiconductor light emitting device.

(2) The connection electrode electrically connects the contact region of the first light emitting portion and the second semiconductor layer of the second light emitting portion.

(3) a first branched electrode formed on a contact region of the first light emitting portion and electrically connected to the connection electrode; And a second branched electrode formed on the second semiconductor layer of the second light emitting portion and electrically connected to the connection electrode.

(4) The semiconductor light emitting device according to any one of (1) to (4), wherein the second branched electrode is gradually bent toward the contact region of the second light emitting portion from the central portion connected to the connecting electrode toward both ends.

(5) a first electrode formed in a contact region of the second light emitting portion; And a second electrode formed on an edge side where a second side and a third side of the first light emitting portion meet each other.

(6) The first electrode includes a first pad electrode on the edge side and a pair of first auxiliary branch electrodes aligned with the second and third sides of the second light emitting portion, and the second electrode includes a second pad electrode on the corner side A pad electrode, and a pair of second auxiliary branch electrodes aligned with the second and third sides of the first light emitting portion.

(7) The first light emitting portion includes: a pad body on a corner side where a second side and a third side meet; A first side light emitter formed apart from the pad body; A partitioning passage formed to expose the substrate at a portion where the pad body and the light emitting body face each other, the partitioning passage dividing the pad body and the light emitting body; And a connecting branch electrode electrically connecting the pad body and the light emitting body across the dividing passageway.

(8) The semiconductor light emitting device according to any one of the preceding claims, wherein the connecting branch electrodes are provided in pairs and extend in parallel with the second and third sides.

(9) The semiconductor light emitting device according to (9), wherein the pad body is formed such that the second semiconductor layer and the active layer are removed to expose the first semiconductor layer.

(10) The second semiconductor layer and a part of the active layer are removed on the first side of the light emitting body of the first light emitting portion and on the side of the edge where the second side and the third side of the second light emitting portion meet, And a contact region for electrical connection.

(11) a first electrode formed in a contact region of the second light emitting portion; And a second electrode formed on the pad body of the first light emitting portion and electrically connected to the connecting branch electrode.

According to one semiconductor light emitting device according to the present disclosure, the first light emitting portion and the second light emitting portion are formed in a triangular shape, and the total reflection and reabsorption inside the chip is relatively reduced as compared with the conventional rectangular shape, .

According to another semiconductor light emitting device according to the present disclosure, absorption of light by the p-side pad electrode is reduced by being formed on a pad body outside the p-side pad electrode light emitting body, thereby improving light extraction efficiency of the semiconductor light emitting element.

According to another semiconductor light emitting device according to the present disclosure, since the p-side pad electrode is formed on the n-type nitride semiconductor layer having good bonding strength, defects such as peeling of the p-side pad electrode in a subsequent process such as a wire bonding process are significantly reduced do.

100, 300, 500: Semiconductor light emitting device 101, 301:
102, 302: connection electrodes 103, 303, 503:
105, 305, 505: second light emitting portion 110, 310, 510:
111, 116, 311, 316: first side 112, 117, 312, 317:
113, 118, 313, 318: Third side 132, 134, 332, 334, 532: n-
120, 320, 520:
130, 330 and 530: a first semiconductor layer, an n-type nitride semiconductor layer
140, 340,
150, 550, and 550: a second semiconductor layer, a p-type nitride semiconductor layer
160,360,560 current diffusion conductive film 170,370,570 p-side pad electrode
173: p side auxiliary branch electrode 175, 175: p side branch electrode
180, 180, and 280: n-side pad electrodes 183 and 383: n-
185: n-side auxiliary branch electrode 190: insulator
306,506; Pad body 307:
308,508: Light emitting body 373:
395: Insulator

Claims (12)

A rectangular substrate;
A first semiconductor layer positioned below the active layer and having a first conductivity, and a second semiconductor layer disposed on the active layer and having a second conductivity different from the first conductivity, A first light emitting portion and a second light emitting portion;
A separation passage formed so as to expose the substrate in the form of diagonally crossing the substrate, the separation passage separating the first light emitting portion and the second light emitting portion;
And a connection electrode electrically connecting the first light emitting portion and the second light emitting portion across the isolation passage,
The first light emitting portion and the second light emitting portion are each formed in a triangular shape having three sides including a first side in contact with the separation passage and a second side and a third side which are not in contact with the separation passage,
A contact for electrical connection is formed such that the second semiconductor layer and a part of the active layer are removed to expose the first semiconductor layer on the first side of the first light emitting portion and on the side of the edge where the second side and the third side of the second light emitting portion meet, Region,
A first electrode formed in a contact region of the second light emitting portion; And
And a second electrode formed on an edge side where a second side and a third side of the first light emitting portion meet,
The first electrode includes a first pad electrode on the edge side and a pair of first auxiliary branch electrodes aligned with the second and third sides of the second light emitting portion,
Wherein the second electrode comprises a second pad electrode on the edge side and a pair of second auxiliary branch electrodes aligned with the second and third sides of the first light emitting portion. The method according to claim 1,
And the connection electrode electrically connects the contact region of the first light emitting portion and the second semiconductor layer of the second light emitting portion. The method of claim 2,
A first branched electrode formed on a contact region of the first light emitting portion and electrically connected to the connection electrode; And
And a second branched electrode formed on the second semiconductor layer of the second light emitting portion and electrically connected to the connection electrode. The method of claim 3,
Wherein the second branched electrode gradually bends toward the contact region of the second light emitting portion from the central portion connected to the connection electrode toward both ends. A rectangular substrate;
A first semiconductor layer positioned below the active layer and having a first conductivity, and a second semiconductor layer disposed on the active layer and having a second conductivity different from the first conductivity, A first light emitting portion and a second light emitting portion;
A separation passage formed so as to expose the substrate in the form of diagonally crossing the substrate, the separation passage separating the first light emitting portion and the second light emitting portion;
And a connection electrode electrically connecting the first light emitting portion and the second light emitting portion across the isolation passage,
The first light emitting portion and the second light emitting portion are each formed in a triangular shape having three sides including a first side in contact with the separation passage and a second side and a third side which are not in contact with the separation passage,
A contact for electrical connection is formed such that the second semiconductor layer and a part of the active layer are removed to expose the first semiconductor layer on the first side of the first light emitting portion and on the side of the edge where the second side and the third side of the second light emitting portion meet, Region,
The connection electrode electrically connects the contact region of the first light emitting portion and the second semiconductor layer of the second light emitting portion,
And a branch electrode formed on the second semiconductor layer of the second light emitting portion and electrically connected to the connection electrode,
Wherein the branched electrodes are gradually bent toward a contact region of the second light emitting portion from a central portion connected to the connection electrode to both ends thereof. The method of claim 5,
A first electrode formed in a contact region of the second light emitting portion; And
And a second electrode formed on an edge side where a second side and a third side of the first light emitting portion meet each other. The method of claim 5,
And an additional branch electrode formed on a contact region of the first light emitting portion and electrically connected to the connection electrode. A rectangular substrate;
A first semiconductor layer positioned below the active layer and having a first conductivity, and a second semiconductor layer disposed on the active layer and having a second conductivity different from the first conductivity, A first light emitting portion and a second light emitting portion;
A separation passage formed so as to expose the substrate in the form of diagonally crossing the substrate, the separation passage separating the first light emitting portion and the second light emitting portion;
And a connection electrode electrically connecting the first light emitting portion and the second light emitting portion across the isolation passage,
The first light emitting portion and the second light emitting portion are each formed in a triangular shape having three sides including a first side in contact with the separation passage and a second side and a third side which are not in contact with the separation passage,
The first light-
A pad body on an edge side where a second side and a third side meet;
A first side light emitter formed apart from the pad body;
A partitioning passage formed to expose the substrate at a portion where the pad body and the light emitting body face each other, the partitioning passage dividing the pad body and the light emitting body; And
And a connecting branch electrode electrically connecting the pad body and the light emitting body across the dividing passageway. The method of claim 8,
And the connecting branch electrodes are provided in a pair and extend in parallel with the second side and the third side, respectively. The method of claim 8,
Wherein the pad body is formed such that the second semiconductor layer and the active layer are removed to expose the first semiconductor layer. The method of claim 8,
An electrical connection is formed in which the second semiconductor layer and a part of the active layer are removed on the first side of the light emitting body of the first light emitting portion and on the side of the edge where the second side and the third side of the second light emitting portion meet, And a contact region for the semiconductor layer. The method of claim 11,
A first electrode formed in a contact region of the second light emitting portion; And
And a second electrode formed on the pad body of the first light emitting portion and electrically connected to the connecting branch electrode.
KR1020120139325A 2012-12-04 2012-12-04 Semiconductor light emitting device KR101420790B1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050008035A (en) * 2003-07-14 2005-01-21 (주)아트세미텍 High Brightness Multi-Electrode Light Emitting Diode Chip for Illuminator
KR20050096583A (en) * 2004-03-31 2005-10-06 서울옵토디바이스주식회사 Light emitting diode
KR101040140B1 (en) * 2010-11-03 2011-06-09 (주)더리즈 Semiconductor light emitting device array and manufacturing method thereof
KR20110067311A (en) * 2009-12-14 2011-06-22 서울옵토디바이스주식회사 Light emitting diode chip having reflectors

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050008035A (en) * 2003-07-14 2005-01-21 (주)아트세미텍 High Brightness Multi-Electrode Light Emitting Diode Chip for Illuminator
KR20050096583A (en) * 2004-03-31 2005-10-06 서울옵토디바이스주식회사 Light emitting diode
KR20110067311A (en) * 2009-12-14 2011-06-22 서울옵토디바이스주식회사 Light emitting diode chip having reflectors
KR101040140B1 (en) * 2010-11-03 2011-06-09 (주)더리즈 Semiconductor light emitting device array and manufacturing method thereof

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