KR101412219B1 - Method for Manufacturing Multi-stepped Substrate - Google Patents

Method for Manufacturing Multi-stepped Substrate Download PDF

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Publication number
KR101412219B1
KR101412219B1 KR1020130048074A KR20130048074A KR101412219B1 KR 101412219 B1 KR101412219 B1 KR 101412219B1 KR 1020130048074 A KR1020130048074 A KR 1020130048074A KR 20130048074 A KR20130048074 A KR 20130048074A KR 101412219 B1 KR101412219 B1 KR 101412219B1
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KR
South Korea
Prior art keywords
substrate
etching
etching step
exposing
etched
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KR1020130048074A
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Korean (ko)
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인 황
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하이트론 주식회사
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching

Abstract

The present invention relates to a method for manufacturing a substrate having a plurality of levels which comprises the steps of: attaching a solid photosensitive material on a substrate; positioning a first film mask on the solid photosensitive material to light expose; exposing a part of the substrate by developing the solid photosensitive material; primary etching the part of the substrate by spraying an etching solution to the exposed portion of the substrate; removing the solid photosensitive material; electrodeposit-coating the substrate formed in the primary etching step; exposing a part of the substrate by patterning the electrodeposit-coated substrate with a laser; secondary etching a part of the substrate primarily etched by spraying the etching solution to the exposed part of the substrate; and removing the electrodeposit coating.

Description

TECHNICAL FIELD [0001] The present invention relates to a method for manufacturing a multi-stepped substrate,

The present invention relates to a method of manufacturing a substrate, and more particularly, to a method of manufacturing a multi-stepped substrate having a plurality of steps.

In general, etching is a method for selectively removing unnecessary portions of the etching layer in the production of semiconductors and the like, and holes, grooves, lines and the like are formed by etching a substrate such as glass or metal. Etching can be broadly divided into wet etching and dry etching, in which wet etching utilizes the chemical reaction of the substrate with an etchant, and dry etching involves processing reactive gases, ions, radicals, and the like onto the substrate in a vacuum.

Wet etching uses a liquid medicine having a property of corroding dissolving a part of a substrate. It can process a large amount of substrates at a time as compared with dry etching, and the cost of equipment or medicine is lower than that of a dry device, Metal plate manufacturing, semiconductor device manufacturing, and the like.

However, wet etching has a disadvantage in that it is difficult to perform fine processing with high precision because the etching proceeds on the side surface as the etching depth becomes deeper. Due to such disadvantages, dry etching is mainly used in micro-machining, multi-step machining that forms a plurality of steps, and the like.

Korean Patent Laid-Open Publication No. 10-2011-0028506 discloses a method of forming a plurality of steps on a substrate by using a plurality of different types of masks. That is, a plurality of masks have different peeling means, and dry etching is sequentially performed using the plurality of different masks to form a plurality of steps on the substrate.

However, Korean Patent Publication No. 10-2011-0028506 uses dry etching and does not take advantage of wet etching capable of cost-to-mass production. As a result, the manufacturing cost of the multistage substrate according to Korean Patent Publication No. 10-2011-0028506 is not so high.

Korean Patent Laid-Open Publication No. 10-2013-0028249, entitled " Method for forming fine pattern using multi-stage etching ", includes a step of performing first etching on the etching layer with an etching solution containing an organic / inorganic additive, And performing a second etching on the etching layer with an etching solution which is not etched. In particular, organic / inorganic additives include photoresist softening components. As a result, the photosensitizer is softened in the first etching process to protect the etching layer, and as a result, sufficient lead top width is ensured in the second etching.

However, Korean Patent Laid-Open Publication No. 10-2013-0028249 has an effect of deeply etching the same portion of the substrate to thereby deepen the depth of the corresponding portion, but it is difficult to be used when only a part of the etched portion is further etched.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems,

First, the cost efficiency of the wet etching can be fully utilized,

Secondly, the present invention can be effectively used not only when a specific portion of a substrate is deeply etched, but also when a portion of an etched portion is further etched,

Third, the present invention provides a method of manufacturing a multistage type substrate, which can maintain high precision between steps even when two or more steps are formed.

In order to accomplish the above object, a method for manufacturing a multi-layer substrate according to the present invention comprises a step of firstly etching a substrate using a solid phase photosensitive agent and a step of secondly etching a substrate subjected to a primary etching using a liquid photosensitizer.

The first etching includes a step of attaching a solid state photosensitive agent to a substrate, a step of positioning and exposing the first film mask on the solid state photosensitive agent, a step of exposing a part of the substrate by developing the solid state photosensitizer, And a step of removing the solid photoresist.

Secondary etching includes the steps of applying and drying a liquid photoresist on a substrate formed in the first etching, placing and exposing a second film mask on the liquid photoresist, exposing a portion of the substrate by developing the dried liquid photoresist, A second etch of a portion of the first etched substrate by ejecting an etchant to an exposed portion of the substrate, and removing the dried liquid photoresist remaining on the substrate.

In the method of manufacturing a multistage substrate of the present invention, the primary etching and the secondary etching can proceed simultaneously on both sides of the substrate.

Further, in the method for manufacturing a multi-step substrate of the present invention, the object to be etched is a metal substrate used for a battery of a fuel cell vehicle.

A modification of the method for manufacturing a multi-step substrate according to the present invention comprises a step of firstly etching a substrate using a solid phase photosensitive agent and a step of secondary etching the substrate subjected to the first etching using electrodeposition plating.

The first etching includes a step of attaching a solid state photosensitive agent to a substrate, a step of positioning and exposing the first film mask on the solid state photosensitive agent, a step of exposing a part of the substrate by developing the solid state photosensitizer, And a step of removing the solid photoresist.

The secondary etching includes electroplating the substrate formed in the primary etching, patterning the electrodeposited substrate with a laser to expose a portion of the substrate, spraying an etchant on the exposed portion of the substrate to form a part of the first etched substrate And then removing the electrodeposited plating.

In a variation of the method for manufacturing a multistage substrate of the present invention, the primary etching and the secondary etching can proceed simultaneously on both sides of the substrate.

Further, in a modification of the method for manufacturing a multi-step substrate of the present invention, the object to be etched is a metal substrate used for a battery of a fuel cell vehicle.

According to the method for forming a multistage substrate of the present invention including these steps, it is possible to ensure cost efficiency by using wet etching when forming a plurality of steps on a substrate.

The present invention can be effectively used not only when a specific portion of a substrate is deeply etched but also when a portion of an etched portion is further etched.

Further, according to the present invention, even if two or more steps are formed on a substrate, it is possible to maintain a high accuracy between steps and to provide a high-quality multi-step substrate.

1A to 1M show a first embodiment of a method for forming a multi-step substrate according to the present invention.
2A to 2M show a second embodiment of a method for forming a multistage substrate according to the present invention.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1A to 1M show a first embodiment of a method for forming a multi-step substrate according to the present invention.

1A to 1M, the first embodiment of the method for manufacturing a multi-layered substrate of the present invention mainly includes a step of firstly etching the substrate 110 using the solid state photosensitizers 120a and 120b, And 125b, to secondarily etch the substrate 110 that has been primarily etched.

The first etching includes attaching the solid phase photosensitizers 120a and 120b to the substrate 110, positioning and exposing the first film masks 130a and 130b on the solid phase photosensitizers 120a and 120b, Exposing a part of the substrate 110 by spraying an etchant on the exposed portion of the substrate 110 to remove a portion of the substrate 110 and then removing the solid photosensitizers 120a and 120b .

First, as shown in FIGS. 1A and 1B, solid-state photosensitizers 120a and 120b are attached to a substrate 110. FIG. The substrate 110 is made of a metal such as stainless steel, aluminum, copper, iron, and nickel-chrome steel. The solid-state photosensitizers 120a and 120b use a dry film, which is a photosensitive resist in the form of a film. The dry film includes a positive film, a negative film and the like, and usually has a three-layer structure in which a photosensitive resist is interposed between a polyester film and a polyethylene film.

As shown in FIG. 1C, the first film masks 130a and 130b are positioned and exposed on the solid state photosensitizers 120a and 120b. Exposure is a structure in which ultraviolet rays emitted from the lamp are gathered by a condenser lens through a mirror and then irradiated to solid-state photosensitizers 120a and 120b which are objects again through a reflector. The portion of the solid state photosensitizer 120a and 120b irradiated with ultraviolet rays is cured.

As shown in FIG. 1D, the exposed solid state photosensitizers 120a and 120b are developed to expose portions of the substrate 110 to be etched. When the solid phase photosensors 120a and 120b are developed using a developing solution such as sodium carbonate or potassium carbonate, the uncured portions of the solid phase photosensors 120a and 120b are removed by the developing solution, and the solidified photosensitizers 120a and 120b are cured Only a part of the etching pattern is formed.

1E and 1F, a part of the substrate 110 is firstly etched by spraying an etchant on the exposed portion of the substrate 110. [ The etchant is sprayed on both sides of the substrate 110, thereby forming a step on both sides of the substrate at the same time. The etching solution is used differently depending on the metal material. For example, when the substrate 110 is stainless steel, a ferric chloride solution, a ferric chloride solution + nitric acid, or the like may be used. When the substrate 110 is made of iron or iron-nickel, the ferric chloride solution is used. When the substrate 110 is made of anodized aluminum, caustic soda or concentrated hydrochloric acid is used. In the case of chromium, In case of copper or copper alloy, ferric chloride solution or ammonium persulfate + mercuric chloride may be used.

Then, as shown in Fig. 1G, the cured solid state photosensitizers 120a and 120b are peeled and removed. As the exfoliation solution, sodium hydroxide, potassium hydroxide and the like can be used.

Secondary etching is performed by coating and drying the liquid photosensitizers 125a and 125b on the substrate 110 formed in the first etching step and drying the second film masks 135a and 135b on the liquid photosensitizers 125a and 125b Exposing a portion of the substrate 110 by developing the dried liquid photosensitizers 125a and 125b to form a portion of the first etched substrate 110 by spraying an etchant to the exposed portion of the substrate 110, , And removing the dried liquid photosensitizer 125a, 125b.

First, as shown in FIG. 1H, the liquid photoresist 125a, 125b is applied to the first etched substrate 110 and dried. The liquid photosensitizers 125a and 125b are applied to the bottom of the depressed portion of the first etched substrate 110 without a gap.

As the liquid photosensitizers 125a and 125b, an alkali soluble liquid resist can be used, which comprises an acrylate copolymer resin, a crosslinkable monomer having at least two ethylenic double bonds, and a photopolymerization initiator.

The liquid resist may be applied by a roll coating method, a squeeze coating method, a dip coating method, an electro-deposition method, or the like.

The liquid photosensitizers 125a and 125b each have a viscosity of about 4 to 100 cp, preferably about 30 to 50 cp. If the viscosity of the liquid photosensitizers 125a and 125b is less than 4 cp, the liquid photosensitizers 125a and 125b may flow down to the outside. If the viscosity is more than 100 cps, the leveling property may be decreased and it may be difficult to form a uniform film . Particularly, in the case of forming two or more steps in the substrate 110, it is necessary to control the viscosity of the liquid photosensitizers 125a and 125b.

After the liquid photosensitizers 125a and 125b are applied, they are dried sufficiently to cause photochemical reaction. Drying is carried out using an infrared lamp oven or hot air oven for 10 to 40 minutes. At this time, the drying temperature is 90 to 120 ° C.

As shown in Fig. 1 (i), the second film masks 135a and 135b are positioned and exposed on the liquid photosensitizers 125a and 125b. The second film masks 135a and 135b are for forming a two-stepped step on the first etched substrate 110, and usually have a pattern different from that of the first film masks 130a and 130b. Of the dried liquid photosensitizers 125a and 125b, portions irradiated with ultraviolet rays are cured.

The dried liquid photosensitizers 125a and 125b are developed to expose a part of the substrate 110 as shown in FIG. The developing solution may be selected from among sodium carbonate, potassium carbonate, alkaline water, ammonium hydroxide and tetramethylammonium hydroxide. When the dried liquid photosensitizers 125a and 125b are developed, the uncured portions of the dried liquid photosensitizers 125a and 125b are removed by the developer, and only the cured portions form a residual etching pattern.

As shown in FIGS. 1K and 11, a part of the substrate 110 subjected to the primary etching is secondarily etched by spraying an etchant to the exposed portion of the substrate 110. Next, as shown in FIGS. The etchant is simultaneously sprayed on both sides of the substrate 110. When the substrate 110 is stainless steel, a ferric chloride solution, a ferric chloride solution + nitric acid, or the like may be used as the etching solution. A step is newly added to the substrate 110 by the secondary etching, and as a result, a multi-step substrate is formed.

Finally, as shown in FIG. 1M, the dried liquid photosensitizers 125a and 125b remaining on the substrate 110 are removed. After the secondary etching is completed, the entire substrate 110 is immersed in a high-concentration alkali solution. Then, the dried liquid photosensitizers 125a and 125b remaining on the patterned substrate 110 are peeled from the substrate 110. Then, Examples of the alkali solution which can be used include alkali hydroxides, ammonium hydroxides, tetramethylammonium hydroxides and the like, preferably alkali hydroxides. The concentration of the alkali solution is about 1 to 10%.

1A to 1M, a general case where the first etching and the second etching are performed simultaneously on both sides of the substrate has been described, but the case of performing the multi-step etching only on one side of the substrate is not excluded .

2A to 2M show a second embodiment of a method for forming a multistage substrate according to the present invention.

As shown in FIGS. 2A to 2M, a modification of the multi-step substrate manufacturing method includes a first etching step of a substrate 210 using a solid state photosensitive material 220a or 220b, And a second etching step using electrodeposition plating.

The first etching includes the steps of attaching the solid phase photosensitizers 220a and 220b to the substrate 210, positioning and exposing the first film masks 230a and 230b on the solid phase photosensitizer 220a and 220b, Exposing a part of the substrate 210 by spraying an etchant on the exposed portion of the substrate 210 to perform a primary etching of a part of the substrate 210 and then developing the solid state photosensitive agents 220a and 220b .

Since the primary etching is the same as the first etching step of the first embodiment described above, the following description is changed to the explanation of the first etching of the first embodiment.

The secondary etching includes electroplating the substrate 210 formed in the primary etching, exposing a part of the substrate 210 by patterning the electrodeposited substrate 210 with a laser, And secondarily etching a portion of the first etched substrate 210, and removing the electrodeposited plating.

As shown in Fig. 2H, both sides of the substrate 110 formed by the first etching are electroplated. Electrodeposited plating refers to plating a surface of a substrate 110 with a plating solution by placing the substrate 110 in an electrodeposition solution while applying different polarities to the electrodepositing solution and the substrate 110. [ Electrodeposition plating is useful for coating a film having a uniform thickness and a large unevenness. In the case of forming a multi-stepped groove in the substrate 110 as in the present invention, multi-stepped steps with high precision can be formed by electrodeposition plating. The electrodeposition plating is usually performed by degreasing to remove grease, etc., immersion of an electrodeposition solution in which the substrate 210 is immersed in an electrodeposition solution to pass electricity, water-cleaning to wash the electrodeposited substrate 210 with water, and baking to dry in a high- . In the electrodeposition plating, when the substrate 210 and the plated body are used as the substrate 210, for example, stainless steel, nickel may be used as the plating body.

As shown in FIGS. 2i and 2j, the electrodeposited substrate 210 is patterned with a laser to expose a portion of the substrate 210. For example, when nickel-plated stainless steel is irradiated with laser light according to patterning, the laser may be an excimer laser, a CO 2 laser, a YAG laser, an Ar laser, a Kr laser, a Y 2 O 3 laser, a YVO 4 laser, a YLF Laser and YAlO 3 laser are used, and the laser irradiation is performed until the nickel plating film is decomposed. As a result, the nickel plated film on the portion irradiated with the laser beam is removed to expose the following stainless steel.

As shown in FIG. 2K, a portion of the substrate 210 subjected to the first etching is secondarily etched by spraying an etching solution onto the exposed portion of the substrate 210. [0053] FIG. The etchant may be simultaneously sprayed on both sides of the substrate 210. When the substrate 210 is stainless steel, a ferric chloride solution, a ferric chloride solution + nitric acid, or the like may be used. By the secondary etching, a step is newly added to the substrate 210, and as a result, a multi-step substrate is formed.

Finally, as shown in FIG. 2M, the nickel plating film remaining on the substrate 110 is removed.

2A to 2M, a general case where the first etching and the second etching are simultaneously performed on both sides of the substrate has been described. However, in the case of performing the multi-step etching only on one side of the substrate, Do not exclude.

Although the present invention has been described based on various embodiments, it is intended to exemplify the present invention. Those skilled in the art will recognize that the technical idea of the present invention can be variously modified or modified based on the above embodiments. However, such variations and modifications may be construed to be included in the following claims.

110, 210: Substrates 120a, 120b, 220a, 220b:
125a, 125b: liquid photoresist 225a, 225b: electrodeposited plating

Claims (6)

A method of manufacturing a substrate having a plurality of steps,
Attaching a solid state photosensitizer to a substrate;
Placing and exposing a first film mask on the solid state photosensitive agent;
Exposing a portion of the substrate by developing the solid state photosensitive agent;
A first etching step of firstly etching a part of the substrate by spraying an etchant on the exposed part of the substrate;
Removing the solid photoresist;
Applying a liquid photoresist to the substrate formed in the primary etching step and drying the substrate;
Placing and exposing a second film mask on the liquid photoresist;
Developing the dried liquid photosensitizer to expose a portion of the substrate;
A second etching step of secondarily etching a part of the firstly etched substrate by spraying an etchant onto the exposed part of the substrate;
And removing the dried liquid photosensitizer. ≪ RTI ID = 0.0 > 11. < / RTI > The method according to claim 1,
Wherein the primary etching step proceeds with respect to both sides of the substrate, and
Wherein the secondary etching step proceeds on both sides of the first etched substrate. 3. The method of claim 1 or 2, wherein the substrate
Wherein the metal substrate is a metal substrate used for a battery of a fuel cell. A method of manufacturing a substrate having a plurality of steps,
Attaching a solid state photosensitizer to a substrate;
Placing and exposing a first film mask on the solid state photosensitive agent;
Exposing a portion of the substrate by developing the solid state photosensitive agent;
A first etching step of firstly etching a part of the substrate by spraying an etchant on the exposed part of the substrate;
Removing the solid photoresist;
Electroplating the substrate formed in the primary etching step;
Patterning the electrodeposited substrate with a laser to expose a portion of the substrate;
A second etching step of secondarily etching a part of the firstly etched substrate by spraying an etchant onto the exposed part of the substrate;
And removing said electrodeposited plating. ≪ RTI ID = 0.0 > 11. < / RTI > 5. The method of claim 4,
Wherein the primary etching step proceeds with respect to both sides of the substrate, and
Wherein the secondary etching step proceeds on both sides of the first etched substrate. The method of claim 4 or 5, wherein the substrate
Wherein the metal substrate is a metal substrate used for a fuel cell battery.
KR1020130048074A 2013-04-30 2013-04-30 Method for Manufacturing Multi-stepped Substrate KR101412219B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102125712B1 (en) * 2020-04-07 2020-06-23 황인 Manufacturing method for multistep substrate using wet etching
KR102284940B1 (en) * 2021-05-10 2021-08-04 위폼스 주식회사 Metal mask manufacturing method using embossing of Rough side process with Pre-etching system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980069103A (en) * 1997-02-26 1998-10-26 이대원 Lead frame manufacturing method and lead frame thereby
JPH11160510A (en) * 1997-09-12 1999-06-18 Canon Inc Manufacture of multistage staircase-like element and manufacture of mold for manufacturing the element
JP2003029393A (en) 2001-07-12 2003-01-29 Matsushita Electric Ind Co Ltd Mask, pattern forming method using the same, and lithography
KR20090082674A (en) * 2008-01-28 2009-07-31 주식회사 하이닉스반도체 Pattern forming method using top surface imaging and double patterning technology

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980069103A (en) * 1997-02-26 1998-10-26 이대원 Lead frame manufacturing method and lead frame thereby
JPH11160510A (en) * 1997-09-12 1999-06-18 Canon Inc Manufacture of multistage staircase-like element and manufacture of mold for manufacturing the element
JP2003029393A (en) 2001-07-12 2003-01-29 Matsushita Electric Ind Co Ltd Mask, pattern forming method using the same, and lithography
KR20090082674A (en) * 2008-01-28 2009-07-31 주식회사 하이닉스반도체 Pattern forming method using top surface imaging and double patterning technology

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102125712B1 (en) * 2020-04-07 2020-06-23 황인 Manufacturing method for multistep substrate using wet etching
KR102284940B1 (en) * 2021-05-10 2021-08-04 위폼스 주식회사 Metal mask manufacturing method using embossing of Rough side process with Pre-etching system

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