KR101398967B1 - Flexible barrier film where the functional layer is interposed between both silicon-based thin films and manufacturing method thereof - Google Patents

Abstract

The present invention relates to a silicon compound thin film-based flexible protection film having a functional layer interposed between silicon compound thin films and a manufacturing method thereof for not only having an excellent gas barrier function which is necessary for a flexible display but also satisfying the aspect of a mass production. The silicon compound thin film-based flexible protection film having a functional layer interposed between silicon compound thin films according to the present invention includes: a first silicon compound thin film which is formed through a plasma-enhanced chemical vapor deposition (PECVD) on a substrate; a first functional layer which is formed on the first silicon compound thin film; a second silicon compound thin film which is formed through the PECVD on the first functional layer; a second functional layer which is formed on the second silicon compound thin film; and a third silicon compound thin film which is formed through the PECVD on the second functional layer. The first silicon compound thin film, the second silicon compound thin film, and the third silicon compound thin film are formed with any one which is selected from SiOx, SiOxNy, and SiCxHyOz while at least one of the compound thin films is formed with a silicon inorganic compound thin film. The first functional layer is formed to include an alkali metal or an alkali earth metal and the second functional layer is formed to include a parylene compound, wherein at least one part is formed in a structure for filling an opening gap between particles of the second silicon compound thin film.

Description

TECHNICAL FIELD [0001] The present invention relates to a flexible protective film based on a silicon-based compound thin film having a functional layer interposed therebetween and a method for manufacturing the same. [0002]

The present invention relates to a gas barrier protective film, and more particularly, to a gas barrier protective film which is composed of a multilayer silicon compound thin film and further interlayer layers of different physical properties are interposed between the thin films of silicon compound to further improve low moisture permeability and low permeability To a flexible protective film based on a thin film of a silicon compound having a functional layer interposed therebetween.

2. Description of the Related Art [0002] Recent electronic products tend to be light in weight for ease of portability while incorporating various functions, and there is an increasing tendency to realize a flexible display device centered on a liquid crystal display device. Accordingly, the display window of the flexible display device is mainly made of a polymer which is lighter, durable and has excellent flexibility.

However, in the case of a display window made of a polymer, it is difficult to visually confirm, but when enlarged, it is common that fine holes are formed in the particles. Moisture or air permeates through the display window to shorten the life of the flexible display device There is a problem that it causes operation failure.

In order to solve such problems, development of a gas barrier protective film using various materials has been progressing. Typical conventional gas barrier protective films include a gas barrier protective film using a metal oxide or a metal nitride (Reference 1) (Reference 2), and a gas barrier protective film using a permanent organic film (Reference 3).

However, in the case of such a conventional gas barrier protective film, if the gas barrier performance is focused on, the low moisture permeability and low permeability can be improved, but the process time and cost are increased and the mass productivity is lowered. On the other hand, Time and cost can be reduced, but it is difficult to achieve satisfactory gas barrier performance.

Reference 1: Korea Patent Publication No. 20070068402 (Disclosure Date: June 29, 2007) Reference 2: Korean Patent No. 0647702 (Registered on Nov. 13, 2006) Reference 3: Japanese Patent Laid-Open No. 2006088615 (Published on April 06, 2006)

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned problems, and it is an object of the present invention to provide a silicon compound thin film base having a functional layer capable of satisfying not only a gas barrier performance required for a flexible display, And a method for producing the same.

According to an aspect of the present invention, there is provided a silicon-based compound thin film-based flexible protective film comprising a first silicon compound thin film formed on a substrate through PECVD (Plasma Enhanced Chemical Vapor Deposition); A functional layer formed on the first silicon-based compound thin film; And a second silicon based compound thin film formed on the functional layer through PECVD, wherein the first silicon based compound thin film and the second silicon based compound thin film are formed of SiO _x , SiO _x N _y , or SiC _x H _y O _z At least one of them is formed of a silicon based thin film of a catalyst-based organic compound, and the functional layer is formed of an alkali metal or an alkaline earth metal.

According to another aspect of the present invention, there is provided a flexible protective film based on a silicon-based compound thin film having a functional layer interposed therebetween, comprising: a first silicon-based compound thin film formed on a substrate through PECVD (Plasma Enhanced Chemical Vapor Deposition) ; A first functional layer formed on the first silicon-based compound thin film; A second silicon based compound thin film formed on the first functional layer through PECVD; A second functional layer formed on the second silicon-based compound thin film; And a third silicon based compound thin film formed on the second functional layer through PECVD, wherein the first silicon based compound thin film, the second silicon based compound thin film, and the third silicon based compound thin film are formed of SiO _x , SiO _x N _y , SiC _x H _y O _z , at least one of the first functional layer and the second functional layer is formed of a silica-based inorganic compound thin film, the first functional layer is formed of an alkali metal or an alkaline earth metal, Is formed to include a perylene compound and at least a part of which is formed in a structure filling at least the pores between the particles of the second silicon-based compound thin film.

According to the flexible protective film based on a silicon-based compound thin film having a functional layer according to the present invention and a method for manufacturing the same, the low moisture permeability and low permeability performance can be improved to a maximum of 1 × 10 ^-3 g / m 2 / day or less.

In addition, since the first silicon compound thin film and the second silicon compound thin film can be formed in the same vacuum chamber using the same process, the productivity is improved, manufacturing cost is reduced, and price competitiveness is improved.

1 is a process flow diagram of a method for manufacturing a flexible protective film based on a silicon compound thin film having a functional layer interposed therebetween according to a first embodiment of the present invention.
2 is a cross-sectional view schematically showing a flexible protective film based on a silicon-based compound thin film having a functional layer interposed therebetween according to a first embodiment of the present invention.
3 is a process flow diagram of a method of manufacturing a flexible protective film based on a silicon compound thin film having a functional layer interposed therebetween according to a second embodiment of the present invention.
4 is a cross-sectional view schematically showing a flexible protective film based on a silicon-based compound thin film having a functional layer interposed therebetween according to a second embodiment of the present invention.
5 is a process flow diagram of a method for fabricating a flexible protective film based on a silicon compound thin film having a functional layer interposed therebetween according to a third embodiment of the present invention.
6 is a cross-sectional view schematically showing a flexible protective film based on a silicon-based compound thin film having a functional layer interposed therebetween according to a third embodiment of the present invention.
7 is an enlarged embodiment of the first embodiment according to the present invention.
8 is an enlarged embodiment of a second embodiment according to the present invention.
9 is an enlarged embodiment of a third embodiment according to the present invention.

According to the present invention, a gas barrier property protecting film is formed on the basis of a multilayer silicon compound thin film, and the gas barrier property can further be improved by interposing another interlayer having different physical properties between these silicon compound thin films. In particular, Deposition method (PECVD) A technical feature capable of forming a gas barrier protective film by a single process is disclosed.

Hereinafter, terms used in the present invention are used to describe only specific embodiments, and the present invention is not intended to be limited thereto. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprises" or "having" and the like are used to specify that there is a feature, a number, a step, an operation, an element, a component or a combination thereof described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

Also, throughout the specification, the term " above or above "means located above or below the object portion, and does not necessarily mean that the object is located on the upper side with respect to the gravitational direction. It will also be understood that when a portion of a layer, film, region, plate, or the like is referred to as being "on or over" another portion, It also includes cases where there are other parts.

In the following, preferred embodiments, advantages and features of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a process flow diagram of a method for manufacturing a flexible protective film based on a silicon compound thin film in which a functional layer is interposed according to a first embodiment of the present invention, FIG. 2 is a cross- Sectional view schematically showing a thin film-based flexible protective film.

Referring to FIGS. 1 and 2, a flexible protective film based on a silicon-based compound thin film having a functional layer interposed therebetween according to the first embodiment of the present invention includes a preprocessing step S10, a first silicon compound thin film forming step S11, a functional layer forming step S12 having healing, and a second silicon compound thin film forming step S13.

The flexible protective film of the first embodiment formed through the above steps includes the first silicon based compound thin film 100, the functional layer 130 of the healing function, and the second silicon based compound thin film 110, The base material 10 of the first embodiment of the present invention.

Here, the base material 10 may be a flexible polymer substrate. Specifically, the polymer substrate may be made of polyethylene terephthalate (PET), polyethylene sulfone (PES), polyethylene naphthalate (PEN), polyimide (PI), polycarbonate (PET), poly (methyl methacrylate) (PMMA), ethylene vinyl acetate (EVA), amorphous polyethylene terephthalate (APET), polypropylene terephthalate (PPT), polyethylene terephthalate glycerol , Cycloolefin polymer (COP), polycyclohexylenedimethylene terephthalate (PCTG), modified triacetyl cellulose (TAC), cycloolefin copolymer (COC), dicyclopentadiene polymer (DCPD), cyclopentadiene polymer CPD), polyetherimide (PEI), polydimethylsilonane (PDMS), silicone resin, fluororesin, and modified epoxy resin.

The first silicon based compound thin film forming step S11 of the first embodiment is a step of depositing the first silicon based compound thin film 100 on a predetermined base material 10, And is formed to have a structure covering at least one surface of the base material 10.

Here, the first silicone compound film 100 is either a silicon-based organic compound film comprising a composition of SiC _x H _y O _z or SiO _X Or a composition of SiO _x N _y Silicon-based inorganic compound thin film.

The first silicon-based compound thin film 100 is deposited on the substrate 10 through a plasma enhanced chemical vapor deposition (PECVD) process. The thickness of the first silicon based compound thin film 100 is 1000 nm or less so that the transmission of the visible light is 70% .

The second silicon-based compound thin film 110 formed in the second silicon-based compound thin film formation step S13 of the first embodiment is a step of depositing the second silicon- Based compound thin film 100 with the first silicon-based compound thin film 130 interposed therebetween.

Here, the second silicon-based compound thin film 110 or the silicon-based organic compound film comprising a composition of SiC _x H _y O _z or SiO _X Or a composition of SiO _x N _y Silicon-based inorganic compound thin film.

The second silicon-based compound thin film 110 is deposited on the functional layer 130 by plasma enhanced chemical vapor deposition (PECVD). The thickness of the second silicon based compound thin film 110 is 1000 nm or less, and the transmission of the visible light ray is 70% .

The flexible protective film according to the first embodiment of the present invention is characterized in that at least one of the first silicon-based compound thin film 100 and the second silicon-based compound thin film 110 is formed of a silicon-based inorganic compound thin film.

Therefore, the first silicon-based compound thin film 100 and the second silicon-based compound thin film 110 can be formed by a combination of a silicon-based organic compound thin film and a silicon-based inorganic compound thin film, a combination of a silicon-based inorganic compound thin film and a silicon- Silicon-based inorganic compound thin film.

When the first silicon-based compound thin film 100 or the second silicon-based compound thin film 110 is formed of a silicon-based organic compound thin film, it is preferable that the thickness is 3 to 100 nm in consideration of the light transmittance of the thin film.

When the first silicon based compound thin film 100 or the second silicon based compound thin film 110 is formed of a silicon based inorganic compound thin film, it is preferable that the thickness is 1000 nm or less in consideration of the flexibility of the thin film.

When the silicon-based organic compound thin film is employed as the first silicon-based compound thin film 100 or the second silicon-based compound thin film 110, flexibility and bending performance of the flexible protective film can be further improved.

On the other hand, when the first silicon-based compound thin film 100 and the second silicon-based compound thin film 110 are both made of a silicon-based inorganic compound thin film, the low permeability and low permeation performance of the flexible protective film can be further improved .

In the flexible protective film according to the first embodiment of the present invention, the functional layer 130 interposed between the first silicon based compound thin film 100 and the second silicon based compound thin film 110 functions as a healing function It is possible to provide flexibility due to its own properties.

Accordingly, it is most preferable that the first silicon compound thin film 100 and the second silicon compound thin film 110 are all formed of a silicon-based inorganic compound thin film. In this case, the functional layer 130 satisfies flexibility and bending resistance, It is possible to further improve the low moisture permeability and low permeability performance due to the silicon-based inorganic compound thin film.

The first silicone compound film 100 and the second case to be composed of an inorganic silicon-based compound thin films all of the silicon-based compound thin film 110, the silicon-based inorganic compound thin film is SiO _X Or SiO _x N _y .

Hereinafter, preferable specific process examples for forming the silicon-based inorganic compound thin film as the first and second silicon-based compound thin films will be described.

(Hexamethyldisiloxane) gas is injected into the chamber and argon (Ar), a carrier gas and a reactive gas (oxygen (O 2), nitrogen (N 2), or an oxygen nitrogen mixed gas) are injected to adjust a desired degree of vacuum in the chamber And the chamber is maintained at a vacuum degree of about 5 x 10 ^-6 to 5 x 10 ^-4 torr through a plurality of vacuum pumps.

On the other hand, when argon (Ar) is used as a base gas for generating plasma, a mass flow meter having a capacity of 100 sccm is used, and a mass flow meter having a capacity of 50 sccm is used for injecting a reactive gas such as oxygen and nitrogen .

Under the above-described conditions, power is applied to the RF power source means to generate a plasma power so that a silicon-based inorganic compound thin film is deposited.

According to one embodiment of the present invention, silicon atoms bonded to tri-methyl are destroyed by plasma energy to form monomers such as Si _x O _y, and the decomposed monomers are again A polymerization reaction in which the reaction gas (oxygen or nitrogen) is polymerized is generated on the surface to form a silicon-based inorganic compound thin film made of any one of SiO _x and SiO _x N _y .

In addition, the silicon-based inorganic compound thin film has a higher RF power, and the deposition rate increases with an increase in the amount of HMDSO gas in the vacuum chamber.

Meanwhile, when any one of the first silicon compound thin film 100 and the second silicon compound thin film 110 is constituted of a thin film of a silicon organic compound, a preferable specific process example for forming the thin film is a second example of FIG. 2 The detailed description thereof will be described in the second embodiment.

The functional layer forming step S12 of the first embodiment is a step of forming a functional layer 130 including a perylene compound in the form of a thin film. The functional layer 130 formed by the functional layer 130 includes a first silicon compound thin film 100, The second silicon-based compound thin film 110 is sandwiched between the second silicon-based compound thin films 110 to provide a healing function for imparting flexibility between the particles of the first silicon-based compound thin film 100 (or the second silicon-based compound thin film 110) .

Here, the voids between the particles of the first silicon-based compound thin film 100 (or the second silicon-based compound thin film 110) are not limited to a fine gap between particles forming the silicon-based compound thin film, Refers to cracks to defects (particularly, point defects).

When the functional layer 130 including the perylene compound is formed on the first silicon-based compound thin film 100 and then the second silicon-based compound thin film 110 is formed on the functional layer 130, the perylene compound itself has excellent permeability At least a part of the perylene compound in the functional layer 130 is permeated and filled in the pores of the first and second silicon-based compound thin films, thereby preventing the permeation of moisture or oxygen through the pores, thereby improving the low moisture permeation / Can be greatly improved.

Further, by the combination of the flexible physical properties of the perylene compound itself and the sandwich structure in which the functional layer 130 having such properties is sandwiched between the first silicon based compound thin film 100 and the second silicon based compound thin film 110, 1 and the second silicon compound thin film are both made of an inorganic compound thin film, flexibility and bending resistance can be ensured, and it is possible to satisfy not only the low moisture permeability and low permeation performance required for the flexible display but also the flexibility and the bending resistance.

The functional layer 130 of the first embodiment may be formed through any one of the methods selected from CVD, PECVD, and thermal deposition. In addition, the functional layer 130 should be formed to have a thickness that can satisfy both the light transmittance and the healing function. Specifically, the functional layer 130 is preferably formed to a thickness of 10 nm to 1000 nm.

In particular, when the functional layer 130 is formed by plasma enhanced chemical vapor deposition (PECVD), the perylene compound thin film as the functional layer 130 can be formed more densely. In this case, The barrier 130 may also provide barrier properties that prevent oxygen or moisture from passing therethrough, as well as providing the healing function and flexibility described above.

Accordingly, the functional layer 130 according to the preferred embodiment is preferably formed of a thin film containing a perylene compound formed by PECVD.

Hereinafter, specific process examples for forming the functional layer 130 of the first embodiment will be described. First, when the first silicon based compound thin film 100 is deposited on the substrate 10, the functional layer 130 is again deposited on the first silicon based compound thin film 100.

The step of depositing the functional layer 130 includes a step of decomposing the functional layer 130 into a perylene compound in the form of a monomer, a step of introducing the perylene compound decomposed in the step into the vacuum chamber, And depositing.

Here, pyrolysis or plasma energy may be applied to the process of decomposing the perylene compound into a monomer type and depositing the functional layer 130.

First, in the case of pyrolysis, the perylene compound in a dimer form is vaporized at a temperature of about 120 to 160 ° C., pyrolyzed at a temperature of about 620 to 680 ° C., and decomposed into a monomeric perylene compound The functional layer 130 is deposited.

Next, in the case of plasma energy, a perylene compound in the form of a dimer is destroyed by plasma energy to form monomers, and the thus-decomposed monomers are reacted with a reactive gas (oxygen or nitrogen And the functional layer 130 is formed.

In any case, the functional layer 130 formed by the above process is formed at least partially in a structure filling the voids between the particles of the first silicon-based compound thin film 100, so that defects or cracks So that the barrier performance of the flexible protective film based on the silicon based compound thin film can be further improved.

The above-described flexible protective film has been described and shown in the configuration including the first silicon based compound thin film 100, the functional layer 130, and the second silicon based compound thin film 110. However, in the second silicon based compound thin film 110 It is needless to say that the third silicon compound thin film may be further laminated with a sandwich structure in which another functional layer of the healing function is interposed.

The method for manufacturing a flexible protective film based on a silicon based compound thin film having a functional layer according to the first embodiment of the present invention preferably further includes a pretreatment step wherein the pretreatment step and the first silicon compound thin film formation step are performed in the same vacuum chamber Can be continuously performed through the same thin film forming process.

The pretreatment step is a step for removing adsorbed gas particles and contaminants present on the substrate 10. The substrate 10 is installed on one side of the installation jig and the degree of vacuum in the vacuum chamber is adjusted to about 1x10 ^-5 torr and then operating the ion beam apparatus.

In the preferred process example of the present invention, the ion beam apparatus is applied with an end-hall method in which thermoelectrons are emitted from filaments to generate plasma, and accelerated ions are emitted from the plasma.

More specifically, a mixed gas (Ar) was injected into the vacuum chamber 210 to maintain a degree of vacuum of 5 × 10 ^-5 torr to 5 × 10 ^-4 torr. The filament power was about 400 W (20 A × 20 V) 260) was set to 180 W (2A × 90 V) for 3 minutes to 5 minutes.

When the preprocessing step is completed according to the above process, the above-described first silicon compound thin film forming step S11 is performed, and then the functional silicon nitride compound thin film forming step S12 and the second silicon compound thin film forming step S13 are performed. A flexible protective film of one embodiment is obtained.

FIG. 3 is a process flow diagram of a method for manufacturing a flexible protective film based on a silicon compound thin film having a functional layer interposed therebetween according to a second embodiment of the present invention, and FIG. 4 is a cross- Sectional view schematically showing a thin film-based flexible protective film.

Referring to FIGS. 3 and 4, the silicon-based compound thin film-based flexible protective film having the functional layer interposed therebetween according to the second embodiment of the present invention is formed by a pretreatment step S20, a first silicon compound thin film formation step S21, a functional layer forming step S22 having a getter function, and a second silicon compound thin film forming step S23.

The flexible protective film of the first embodiment formed through the above steps includes a first silicon-based compound thin film 200, a getter functioning functional layer 230, and a second silicon based compound thin film 210, The base material 10 of the first embodiment of the present invention.

Here, the base material 10 may be a flexible polymer substrate, and specifically usable materials are the same as those of the first embodiment.

The first silicon-based compound thin film forming step S21 of the second embodiment is a step of depositing the first silicon based compound thin film 200 on a predetermined base material 10, And is formed to have a structure covering at least one surface of the base material 10.

Here, the first silicone compound film 200 is either a silicon-based organic compound film comprising a composition of SiC _x H _y O _z or SiO _X Or a composition of SiO _x N _y Silicon-based inorganic compound thin film.

The first silicon-based compound thin film 200 is deposited on the substrate 10 through a plasma enhanced chemical vapor deposition (PECVD) process so that the thickness of the first silicon-based compound thin film 200 is less than 1000 nm so that the transmission of the visible light ray is 70% .

The second silicon based compound thin film formation step S23 of the second embodiment is a step of depositing the second silicon based compound thin film 210 on the functional layer 230, Based compound thin film 200 with the first silicon-based compound thin film 230 sandwiched therebetween.

Here, the second silicon-based compound thin film 210 or the silicon-based organic compound film comprising a composition of SiC _x H _y O _z or SiO _X Or a composition of SiO _x N _y Silicon-based inorganic compound thin film.

The second silicon based compound thin film 210 is deposited on the functional layer 230 by plasma enhanced chemical vapor deposition (PECVD), and the thickness of the second silicon based compound thin film 210 is 1000 nm or less so that the transmission of the visible light ray is 70% .

The flexible protective film according to the second embodiment of the present invention is characterized in that at least one of the first silicon based compound thin film 200 and the second silicon based compound thin film 210 is composed of a silicon based inorganic compound thin film.

Accordingly, the first silicon compound thin film 200 and the second silicon compound thin film 210 can be formed by a combination of a silicon organic compound thin film and a silicon inorganic compound thin film, a combination of a silicon organic compound thin film and a silicon organic compound thin film, Silicon-based inorganic compound thin film.

When the first silicon based compound thin film 200 or the second silicon based compound thin film 210 is formed of a silicon based organic compound thin film, it is preferable that the thickness is 3 to 100 nm in consideration of the light transmittance of the thin film.

When the first silicon based compound thin film 200 or the second silicon based compound thin film 210 is composed of a silicon based inorganic compound thin film, it is preferable that the thickness is 1000 nm or less in consideration of the flexibility of the thin film.

When the silicon-based organic compound thin film is employed as the first silicon-based compound thin film 200 or the second silicon-based compound thin film 210, flexibility and bendability of the flexible protective film can be further improved.

On the other hand, when the first silicon-based compound thin film 200 and the second silicon-based compound thin film 210 are both made of a silicon-based inorganic compound thin film, the low permeability and low permeation performance of the flexible protective film can be further improved .

However, since the functional layer 230 according to the second embodiment of the present invention is formed of a metal material, it is difficult to provide sufficient flexibility with respect to the functional layer 130 of the first embodiment.

Therefore, it is preferable that at least one of the first silicon-based compound thin film 200 and the second silicon-based compound thin film 210 be composed of a silicon-based inorganic compound thin film and the other is composed of a silicon-based organic compound thin film, Based compound thin film 200 may be formed of a silicon-based organic compound thin film so as to provide flexibility between the substrate 10 and the second silicon-based compound thin film 210.

When the first silicon-based compound thin film 200 is formed of a silicon-based organic compound thin film, the silicon-based organic compound thin film is formed of a composition of SiC _x H _y O _z .

Hereinafter, preferred specific process examples for forming the silicon-based organic compound thin film as the first silicon-based compound thin film 200 will be described.

(Hexamethyldisiloxane) gas is injected into the chamber and argon (Ar), a carrier gas and a reactive gas (oxygen (O 2)) are injected in order to adjust a desired degree of vacuum in the chamber. The vacuum degree of 5 x 10 ^-6 to 5 x 10 ^-4 torr is maintained.

Under the above conditions, power is applied to the RF power source means to generate a plasma power so that a silicon-based organic compound thin film is deposited.

On the other hand, when the second silicon-based compound thin film 210 is formed of a silicon-based inorganic compound thin film, a preferable specific process example for forming the second silicon based compound thin film 210 is the same as that of the first embodiment, and a detailed description thereof will be omitted.

The functional layer forming step S22 of the second embodiment is a step of forming a functional layer 230 including an alkali metal or an alkaline earth metal in the form of a thin film. The functional layer 230 formed by the functional layer 230 is formed of the first silicon compound thin film 200 Based compound thin film 210 and the second silicon based compound thin film 210 in a sandwich structure and adsorbs moisture or oxygen permeated through the second silicon based compound thin film 210.

Specifically, the functional layer 230 of the second embodiment may be formed of a metal such as lithium, sodium, potassium, magnesium, calcium, calcium hydride, sodium hydride, And at least one selected from the group consisting of these compounds.

When the functional layer 230 of the second embodiment is formed so as to cover the entire surface of one side of the first silicon-based compound thin film 200, it is preferable to form the functional layer 230 to a thickness of 1 nm to 50 nm in consideration of the light transmittance of at least 70% desirable.

On the other hand, the functional layer 230 of the second embodiment may be formed in a predetermined pattern on the first silicon-based compound thin film 200 for smooth light transmission. In this case, the functional layer 230 may be formed of any one of a plurality of spaced apart horizontal line patterns, a plurality of vertical line patterns spaced apart from each other, and a mesh pattern.

When the functional layer 230 is formed in a predetermined pattern shape, the space of the pattern (that is, the spacing space between the horizontal line patterns and the unit mesh of the mesh pattern) It is preferable to be configured to be located in an area overlapping with the cell.

The functional layer 230 of the second embodiment may be formed by PVD (Physical Vapor Deposition). In particular, when the functional layer 230 is formed in a predetermined pattern shape, the first silicon- The functional layer 230 may be deposited over the entire surface of the substrate 200 and then patterned into a desired shape using a photolithography process or an etching process.

The method for manufacturing a flexible protective film based on a silicon based compound thin film having a functional layer according to a second embodiment of the present invention may further include a pre-processing step (S20), which is the same as the first embodiment, Omit it.

FIG. 5 is a process flow diagram of a method of manufacturing a flexible protective film based on a silicon-based compound thin film in which a functional layer is interposed according to a third embodiment of the present invention. FIG. Sectional view schematically showing a thin film-based flexible protective film.

5 and 6, the silicon-based compound thin film-based flexible protective film having the functional layer interposed therebetween according to the third embodiment of the present invention includes a pretreatment step S30, a first silicon compound thin film formation step S31, A second silicon compound thin film formation step S33, a second functional layer formation step S34, and a third silicon compound thin film formation step S35.

The flexible protective film of the third embodiment formed through the above steps is formed by sequentially forming the first silicon based compound thin film 300, the first functional layer 350 having the getter function, the second silicon based compound thin film 310, Layer 370, and a third silicon-based compound thin film 330, which are sequentially stacked on a predetermined base material 10.

The flexible protective film according to the third embodiment is basically the same as that of the second embodiment except that it further includes the second functional layer 370 and the third silicon based compound thin film 330.

Hereinafter, the difference will be mainly described. First, the first silicon based compound thin film 300, the first functional layer 350, and the second silicon based compound thin film 310 of the third embodiment are the first silicon based compound thin film 200 of the second embodiment, The functional layer 230, and the second silicon-based compound thin film 210, respectively.

Therefore, the second silicon-based compound thin film 310 of the third embodiment is formed of a silicon-based inorganic compound thin film, and the first silicon-based compound thin film 300 is composed of a silicon-based organic compound thin film, It is desirable to configure the flexible protective film so as to provide flexibility.

The second functional layer 370 formed on the second silicon based compound thin film 310 is formed through the same process as that of the functional layer 130 including the perylene compound of the first embodiment. The configuration is also the same.

The second functional layer 3 silicon-based compound thin film 330 is formed on the laminate 370 is either a silicon-based organic compound film comprising a composition of SiC _x H _y O _z or SiO _X Or a composition of SiO _x N _y Silicon-based inorganic compound thin film, and is preferably formed of a silicon-based inorganic compound thin film.

As a result, the flexible protective film according to the third embodiment has a function layer 350 having a getter function arranged in a line (for example, between the first silicon compound thin film and the second silicon compound thin film) at a position close to the substrate 10 And a functional layer 370 having a healing function is disposed at a position far from the substrate 10 (that is, between the second silicon based compound thin film and the third silicon based compound thin film).

The second silicon-based compound thin film 310 and the third silicon-based compound thin film 330 primarily function as a barrier against external oxygen to moisture, thereby preventing the penetration of minute amounts of oxygen And moisture are secondarily adsorbed on the first functional layer 350, the performance of the low permeability and low permeability of the flexible protective film can be greatly improved.

FIG. 7 is an enlarged embodiment of the first embodiment according to the present invention, FIG. 8 is an enlarged embodiment of the second embodiment according to the present invention, and FIG. 9 is an enlarged embodiment of the third embodiment according to the present invention.

7 to 9, an expanded embodiment of the first to third embodiments according to the present invention is characterized by further including a transparent conductive thin film.

7, a transparent conductive thin film 400 is deposited on a second silicon based compound thin film 110 formed on the top of the flexible protective film (see FIG. 2) of the first embodiment.

The transparent conductive thin film 400 may be formed by a sputtering method in particular of PVD. Examples of the transparent conductive thin film include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO) Indium zinc oxide (AZO), gallium zinc oxide (GZO), florine tin oxide (FTO), indium tin oxide-silver-indium tin oxide (ITO-Ag-ITO), indium zinc oxide- Ag-IZO), indium zinc tin oxide-silver-indium zinc-tin oxide (IZTO-Ag-IZTO), and aluminum zinc oxide-silver-aluminum zinc oxide (AZO- Oxide-metal-metal oxide, and may be formed using an organic conductor material such as PEDOT: PSS or polyaniline (PANI). The transparent electrode 400 may be formed of a metal thin film such as a silver thin film or a gold thin film and may be formed of a thin film formed by coating silver nanowire, gold nanowire, copper nanowire, or platinum nanowire The transparent electrode 400 may be formed, and the transparent electrode 400 may be formed by mixing at least one of the materials forming the transparent electrode. Furthermore, the transparent electrode 400 may be formed by coating a carbon material such as carbon nanotube or graphene.

8, a transparent conductive thin film 400 is deposited on a second silicon based compound thin film 210 formed on the top of the flexible protective film (see FIG. 4) of the second embodiment, and a transparent conductive thin film 400 is formed The usable materials and the forming method are the same as the extended embodiment of Fig.

9, a transparent conductive thin film 400 is deposited on a third silicon based compound thin film 330 formed on the top of the flexible protective film (see FIG. 6) of the third embodiment, and a transparent conductive thin film 400 is formed The usable materials and the forming method are the same as the extended embodiment of Fig.

According to the flexible protective films of the first to third embodiments as described above, the low moisture permeability and low permeability performance can be maintained at a maximum of 1 x 10 < ^-3 > g / m2 / day.

While the preferred embodiments of the present invention have been described and illustrated above using specific terms, such terms are used only for the purpose of clarifying the invention, and it is to be understood that the embodiment It will be obvious that various changes and modifications can be made without departing from the spirit and scope of the invention. Such modified embodiments should not be understood individually from the spirit and scope of the present invention, but should be regarded as being within the scope of the claims of the present invention.

10: substrate
100, 200, 300: the first silicon compound thin film
110, 210, 310: the second silicon compound thin film
130: function of the healing function layer 230: function layer of the getter function
330: Third silicon compound thin film
350: first functional layer 370: second functional layer
400: transparent conductive thin film

Claims (19)

A first silicon based compound thin film formed on a substrate through PECVD (Plasma Enhanced Chemical Vapor Deposition); A functional layer formed on the first silicon-based compound thin film; And a second silicon based compound thin film formed on the functional layer through PECVD,
The first silicon-based compound thin film and the second silicon-
SiO _x , SiO _x N _y , and SiC _x H _y O _z , and at least one of them is formed of a silica-based compound semiconductor thin film,
Wherein the functional layer comprises:
Wherein the silicon-based compound thin film is formed in a shape selected from among a plurality of mutually spaced horizontal line patterns, a plurality of mutually spaced vertical line patterns, and a mesh pattern formed of an alkali metal or an alkaline earth metal. Based flexible shield.
The method according to claim 1,
The first silicon-based compound thin film is a silicon-based organic compound thin film formed of SiC _x H _y O _z ,
The second silicon-based compound thin film may be SiO _x Or silicon-based inorganic compound thin film formed of SiO _x N _y .
The method according to claim 1,
The functional layer is formed from a group consisting of lithium (Li), sodium (Na), potassium (K), magnesium (Mg), calcium (Ca), calcium hydride (CaH), sodium hydride Wherein the functional layer is formed of at least one selected from the group consisting of silicon oxide and silicon oxide.
The method according to claim 1,
Wherein the functional layer is formed to a thickness of 1 nm to 50 nm.
delete A first silicon based compound thin film formed on a substrate through PECVD (Plasma Enhanced Chemical Vapor Deposition); A first functional layer formed on the first silicon-based compound thin film; A second silicon based compound thin film formed on the first functional layer through PECVD; A second functional layer formed on the second silicon-based compound thin film; And a third silicon based compound thin film formed on the second functional layer through PECVD,
The first silicon compound thin film, a second silicon compound thin film, and a third silicon compound thin film, SiO _X, are formed by any one selected from the group consisting of SiO _x N _y, SiC _x H _y O _z, at least one is a silica-based kongye arms A compound thin film,
The first functional layer may include an alkali metal or an alkaline earth metal,
Wherein the second functional layer is formed to include a perylene compound and at least a part of the second functional layer is formed to fill at least voids between the particles of the second silicon based compound thin film. .
The method according to claim 6,
The second silicon based compound thin film and the third silicon based compound thin film are SiO _X Or silicon-based inorganic compound thin film formed of SiO _x N _y .
8. The method of claim 7,
Wherein the first silicon-based compound thin film is a silicon-based organic compound thin film formed of SiC _x H _y O _z .
The method according to claim 6,
Wherein the second functional layer is formed by PECVD (Plasma Enhanced Chemical Vapor Deposition).
The method according to claim 6,
Wherein the gap between the particles of the second silicon-based compound thin film is a point defect or a crack. A flexible protective film based on a silicon-based compound thin film having a functional layer interposed therebetween.
The method according to claim 6,
Wherein the first functional layer is made of a material selected from the group consisting of lithium (Li), sodium (Na), potassium (K), magnesium (Mg), calcium (Ca), calcium hydride (CaH), sodium hydride Wherein the functional layer is formed of at least one selected from the group consisting of a silicon-based compound, a silicon-based compound, and a silicon-based compound.
The method according to claim 6,
The first functional layer is formed to a thickness of 1 nm to 50 nm,
Wherein the second functional layer is formed to a thickness of 10 nm to 1000 nm.
delete delete Forming a first silicon based compound thin film on a substrate through Plasma Enhanced Chemical Vapor Deposition (PECVD); Forming a functional layer on the first silicon-based compound thin film; And forming a second silicon based compound thin film on the functional layer through PECVD,
The first silicone compound and the second thin-film silicon-based compound thin film, but formed of one selected from the group consisting of _X SiO, SiO _x N _y, SiC _x H _y O _z, at least one is formed as a silica-based kongye organic compound thin film,
Wherein the functional layer is formed of a thin film containing an alkali metal or an alkaline earth metal,
Wherein the step of forming the functional layer comprises depositing the functional layer by evaporation in any one of a plurality of horizontal line patterns spaced apart from each other, a plurality of vertical line patterns spaced apart from each other, and a mesh pattern. Based thin film based flexible protective film.
16. The method of claim 15,
The first silicon-based compound thin film is formed of a silicon-based organic compound thin film containing a composition of SiC _x H _y O _z ,
The second silicon-based compound thin film, SiO _X or SiO _x N _y inorganic compound thin-film silicon-based composition characterized in that the method for manufacturing the functional layers of the silicon-based compound thin film interposed based flexible protective film to the forming of the containing.
Forming a first silicon based compound thin film on a substrate through Plasma Enhanced Chemical Vapor Deposition (PECVD); Forming a first functional layer on the first silicon-based compound thin film; Forming a second silicon based compound thin film on the first functional layer through PECVD; Forming a second functional layer on the second silicon-based compound thin film; And forming a third silicon based compound thin film on the second functional layer through PECVD,
The first silicon compound thin film, a second silicon compound thin film, and a third silicon compound thin film, SiO _X, but formed of one selected from the group consisting of SiO _x N _y, SiC _x H _y O _z, at least one is a silica-based kongye arms A compound thin film,
Wherein the first functional layer is formed of a thin film containing an alkali metal or an alkaline earth metal,
Characterized in that the second functional layer is formed of a thin film containing a perylene compound and at least a part of the perylene compound is formed to have a structure that fills at least voids between particles of the second silicon- A method for manufacturing a flexible protective film based on a thin film of a silicon compound.
18. The method of claim 17,
The first silicon-based compound thin film is formed of a silicon-based organic compound thin film containing a composition of SiC _x H _y O _z ,
The second silicon-based compound thin film, SiO _X N _y, or SiO _x composition of the silicon-based inorganic compound thin film characterized in that the method for manufacturing the functional layers of the silicon-based compound thin film interposed based flexible protective film to the forming of the containing.
18. The method of claim 17,
Wherein the first functional layer is made of a material selected from the group consisting of lithium (Li), sodium (Na), potassium (K), magnesium (Mg), calcium (Ca), calcium hydride (CaH), sodium hydride Wherein the functional layer is formed of at least one selected from the group consisting of a silicon-based compound thin film and a silicon-based compound thin film.

Images