KR100965847B1 - A board having layer for preventing humidity - Google Patents

A board having layer for preventing humidity Download PDF

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KR100965847B1
KR100965847B1 KR1020090081612A KR20090081612A KR100965847B1 KR 100965847 B1 KR100965847 B1 KR 100965847B1 KR 1020090081612 A KR1020090081612 A KR 1020090081612A KR 20090081612 A KR20090081612 A KR 20090081612A KR 100965847 B1 KR100965847 B1 KR 100965847B1
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silicon
thin film
compound thin
organic compound
inorganic compound
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KR1020090081612A
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Korean (ko)
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이건환
윤정흠
이성훈
정유정
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한국기계연구원
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides

Abstract

PURPOSE: A board having layer for preventing humidity is provided to reduce the permeability of vapor and oxide by forming a film preventing humidity through a plasma enhanced chemical vapor deposition. CONSTITUTION: A transparent base material(120) is formed with a polymer. A film preventing humidity is formed on the top side of the transparency base material. The film comprises a silicon organic compounds thin film(142) and a silicon inorganic compound(144). The silicon organic compounds thin film is deposited on the one side of the transparent base material by thickness of 3~10mm through plasma chemical vapor deposition. The silicon inorganic compound is formed on the one side of the silicon organic compounds thin film in order to have the thickness less than 1000nm thorough PECVD(Plasma-Enhanced Chemical Vapor Deposition). The silicon organic compounds thin film and silicon inorganic compound thin film are successively formed.

Description

투습방지막이 구비된 기판{A board having layer for preventing humidity}A board having layer for preventing humidity

도 1 은 본 발명에 의한 투습방지막이 구비된 기판의 외관을 보인 실물 사진.1 is a real picture showing the appearance of the substrate with a moisture barrier film according to the present invention.

도 2 는 본 발명에 의한 투습방지막이 구비된 기판의 일실시예의 구성을 개략적으로 나타낸 모식도.Figure 2 is a schematic diagram schematically showing the configuration of one embodiment of a substrate with a moisture barrier film according to the present invention.

도 3 은 본 발명에 의한 투습방지막이 구비된 기판의 다른 실시예의 구성을 개략적으로 나타낸 모식도.Figure 3 is a schematic diagram schematically showing the configuration of another embodiment of the substrate with a moisture barrier film according to the present invention.

도 4 는 본 발명에 의한 투습방지막이 구비된 기판의 제조방법에 사용되는 박막 코팅장치의 구성을 나타낸 개략도.Figure 4 is a schematic diagram showing the configuration of a thin film coating apparatus used in the method for manufacturing a substrate with a moisture barrier film according to the present invention.

도 5 는 본 발명에 의한 투습방지막이 구비된 기판의 제조방법을 나타낸 순서도.Figure 5 is a flow chart showing a method of manufacturing a substrate with a moisture barrier film according to the present invention.

도 6 은 본 발명에 의한 투습방지막이 구비된 기판의 비교예 표면 확대 사진.Figure 6 is an enlarged photograph of the surface of the comparative example of the substrate with a moisture barrier film according to the present invention.

도 7 은 본 발명에 의한 투습방지막이 구비된 기판의 실시예 표면 확대 사진.Figure 7 is an enlarged view of the surface of the embodiment of the substrate provided with a moisture barrier film according to the present invention.

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

100. 기판 120. 투명모재100. Substrate 120. Transparent substrate

140. 투습방지막 142. 유기화합물박막140. Moisture barrier 142. Organic compound thin film

144. 무기화합물박막 200. 막코팅장치144. Inorganic compound thin film 200. Film coating equipment

210. 진공챔버 220. 설치지그210. Vacuum chamber 220. Mounting jig

230. 알에프전원수단 240. 가스공급수단230. RF power supply 240. Gas supply means

250. 진공발생수단 260. 이온빔장치250. Vacuum generating means 260. Ion beam device

272. 산화물 증발소스 S100. 전처리단계272. Oxide evaporation source S100. Pretreatment stage

S200. 투습방지막박막형성단계 S220. 유기화합물박막형성과정S200. Moisture barrier film forming step S220. Organic Compound Thin Film Formation Process

S240. 무기화합물박막형성과정S240. Inorganic Compound Thin Film Forming Process

본 발명은 투습방지막이 구비된 기판에 관한 것으로, 보다 상세하게는 PECVD 단일 방법을 이용하여 가시광선 투과도에 큰 영향을 미치지 않으면서 투습도나 투산소도가 감소하도록 한 투습방지막이 구비된 기판에 관한 것이다.The present invention relates to a substrate having a moisture barrier film, and more particularly, to a substrate having a moisture barrier film to reduce moisture permeability and oxygen permeability without significantly affecting visible light transmittance using a single PECVD method. .

근래의 전자제품은 다양한 기능이 내장됨과 동시에 휴대 용이성을 위하여 경량화되고 있는 추세이며 액정 표시 장치를 중심으로 Flexible 디스플레이 소자의 실현을 위한 요구도가 증대되고 있는 추세이다. 이에 따라 Flexible 디스플레이 소자의 표시창은 보다 가벼우면서 내구성이 보장되고 연성(Flexibility)이 우수한 폴 리머가 주로 사용되고 있다.In recent years, electronic products have been built in a variety of functions and at the same time being lightweight for easy portability, and the demand for realizing flexible display devices, especially in liquid crystal displays, is increasing. Accordingly, a display panel of a flexible display device is mainly used with a lighter, durable and flexible polymer.

그러나, 폴리머로 제조된 표시창의 경우 육안으로 확인은 어려우나 확대해보면 입자가 조대하여 미세구멍이 형성됨이 일반적이며, 이러한 미세구멍을 통해 습기나 공기가 표시창을 투과하게 되어 Flexible 디스플레이 소자의 수명을 단축시켜 결국 작동 불능을 야기하게 되는 문제점이 있다.However, in the case of a display window made of polymer, it is difficult to check with the naked eye, but when enlarged, particles are coarse to form micropores, and moisture or air penetrate the display window through these micropores, which shortens the life of the flexible display device. Eventually there is a problem that causes inoperability.

이러한 문제점을 해결하기 위해 다양한 투습방지막의 개발이 진행되고 있으나, 투습 방지 기능만 부가될 뿐 표시창의 투시성을 낮추게 되어 결국 액정표시장치의 기능이 상실되는 문제점이 발생된다.In order to solve this problem, various moisture barrier films have been developed. However, only the moisture barrier function is added, which lowers the transparency of the display window, resulting in the loss of the function of the liquid crystal display.

본 발명의 목적은 상기한 바와 같은 문제점을 해결하기 위한 것으로, 플라즈마화학증기증착법(PECVD) 단일 공정을 이용하여 실리콘계 유기화합물박막과 무기화합물박막을 형성시켜 가시광선 투과도에 큰 영향을 미치지 않으면서 투습도나 투산소도가 급격히 감소하도록 한 투습방지막이 구비된 기판을 제공하는 것에 있다.An object of the present invention is to solve the problems described above, by forming a silicon-based organic compound thin film and an inorganic compound thin film using a single plasma chemical vapor deposition (PECVD) process moisture permeability without a significant effect on the visible light transmittance It is an object of the present invention to provide a substrate provided with a moisture barrier film for rapidly reducing oxygen permeability.

본 발명에 의한 투습방지막이 구비된 기판은, 폴리머로 이루어진 투명모재 일측에 플라즈마화학증기증착법(PECVD:Plasma Enhanced Chemical Vapor Deposition)법을 통해 증착된 실리콘계 유기화합물박막과, 상기 유기화합물박막 일측에 PECVD법을 통해 형성된 실리콘계무기화합물(SiOx)을 포함하여 구성되는 투습방 지막이 구비됨을 특징으로 한다.Substrate with a moisture barrier film according to the present invention, a silicon-based organic compound thin film deposited by plasma enhanced chemical vapor deposition (PECVD) method on one side of the transparent base material made of a polymer, and PECVD on one side of the organic compound thin film It is characterized in that the moisture barrier film comprising a silicon-based inorganic compound (SiO x ) formed through the method.

상기 투명모재는 PC, PET, PES, PEN, PAR, 투명 폴리머 기판 중 어느 하나를 포함하는 것을 특징으로 한다.The transparent base material is characterized in that it comprises any one of PC, PET, PES, PEN, PAR, transparent polymer substrate.

상기 실리콘계 유기화합물박막과 실리콘계 무기화합물박막을 2회 이상 연속으로 형성시켜 다층박막으로 구성됨을 특징으로 한다.The silicon-based organic compound thin film and the silicon-based inorganic compound thin film are formed two or more times in succession, characterized in that composed of a multilayer thin film.

상기 실리콘계 유기화합물박막은 3 내지 100㎚의 두께를 갖는 것을 특징으로 한다.The silicon-based organic compound thin film is characterized in that it has a thickness of 3 to 100nm.

상기 실리콘계 유기화합물박막은 SiCxHyOz의 화학적 조성을 특징으로 한다.The silicon-based organic compound thin film is characterized by the chemical composition of SiC x H y O z .

상기 실리콘계 무기화합물박막은 1000㎚ 이하의 두께를 갖는 것을 특징으로 한다.The silicon-based inorganic compound thin film is characterized by having a thickness of less than 1000nm.

상기 투습방지막의 투습도는 1 × 10-3g/㎡/day 이하인 것을 특징으로 한다.The moisture permeability of the moisture barrier is characterized in that less than 1 × 10 -3 g / ㎡ / day.

본 발명에 의한 투습방지막이 구비된 기판 제조방법은, 폴리머로 이루어진 투명모재의 표면을 이온빔을 이용하여 전처리하는 전처리단계와; 상기 투명모재에 PECVD법으로 실리콘계 유기화합물박막을 형성하는 유기화합물박막형성과정과, 상기 유기화합물박막 상면에 PECVD법으로 실리콘계 무기화합물박막을 형성하는 무기화합물박막형성과정을 포함하는 투습방지막형성단계;로 이루어지는 것을 특징으로 한다.Substrate manufacturing method provided with a moisture barrier film according to the present invention, the pre-treatment step of pre-treating the surface of the transparent base material made of a polymer using an ion beam; An organic compound thin film forming step of forming a silicon-based organic compound thin film on the transparent base material by PECVD, and an inorganic compound thin film forming step of forming a silicon-based inorganic compound thin film on the upper surface of the organic compound thin film by PECVD; Characterized in that consists of.

상기 투습방지막형성단계는 다수회 실시됨을 특징으로 한다.The moisture barrier film forming step is characterized in that it is carried out a plurality of times.

상기 전처리단계와 투습방지막형성단계는, 동일한 진공챔버 내부에서 동일한 박막 형성과정을 통해 연속적으로 실시됨을 특징으로 한다.The pretreatment step and the moisture barrier film forming step are characterized in that it is carried out continuously through the same thin film forming process in the same vacuum chamber.

이와 같이 구성되는 본 발명에 따르면, 투명성은 유지하면서 투습도 및 투산소도가 획기적으로 감소하는 이점이 있다.According to the present invention configured as described above, there is an advantage that the water vapor transmission rate and oxygen permeability are greatly reduced while maintaining transparency.

이하 본 발명에 의한 투습방지막이 구비된 기판의 구성을 첨부된 도 1 및 도 2를 참조하여 설명한다.Hereinafter, a configuration of a substrate with a moisture barrier film according to the present invention will be described with reference to FIGS. 1 and 2.

도 1은 본 발명에 의한 투습방지막이 구비된 기판의 외관을 보인 실물 사진이고, 도 2는 본 발명에 의한 투습방지막이 구비된 기판의 일실시예의 구성을 개략적으로 나타낸 종단면도이다.1 is a real picture showing the appearance of a substrate with a moisture barrier film according to the present invention, Figure 2 is a longitudinal cross-sectional view schematically showing the configuration of an embodiment of a substrate with a moisture barrier film according to the present invention.

이들 도면과 같이, 본 발명의 바람직한 실시예가 채용된 기판(100)은, 폴리머로 이루어진 투명모재(120)와, 상기 투명모재(120) 상면에 형성된 투습방지막(140)을 포함하여 구성된다.As shown in these drawings, the substrate 100 employing the preferred embodiment of the present invention includes a transparent base material 120 made of a polymer and a moisture barrier film 140 formed on an upper surface of the transparent base material 120.

상기 투명모재(120)는 PC, PET, PES, PEN, PAR을 포함하는 연성 디스플레이 소자용 폴리머 기판 중 어느 하나로 이루어져 플렉시블하게 구성되며, 상기 기판(100)의 맨 하측에 위치한다.The transparent base material 120 is made of any one of a polymer substrate for a flexible display device including a PC, PET, PES, PEN, PAR is flexible and is located at the bottom of the substrate (100).

그리고, 상기 투습방지막(140)은 투명모재(120) 상면에 위치하여 투명모재(120)에 대한 습기 및 공기의 통과율을 낮추기 위한 구성으로, 상기 투명모재(120) 상면에 PECVD법으로 증착된 실리콘계 유기화합물박막(142)과, 상기 유기화합물박막(142) 상면에 형성된 실리콘계 무기화합물박막(144)을 포함하여 구성된다.In addition, the moisture barrier film 140 is located on the upper surface of the transparent base material 120 to reduce the moisture and air passage rate for the transparent base material 120, the silicon-based deposited on the upper surface of the transparent base material 120 by PECVD method The organic compound thin film 142 and the silicon-based inorganic compound thin film 144 formed on the upper surface of the organic compound thin film 142 are formed.

상기 유기화합물박막(142)은 실리콘계 유기화합물 (SiCxHyOz)로 구성되며, PECVD법을 통해 상기 투명모재(120) 상면에 증착되며 그 두께는 3 내지 100㎚로 형성되어 가시광선의 투과가 70% 이상 되도록 구성된다.The organic compound thin film 142 is composed of a silicon-based organic compound (SiC x H y O z ), and is deposited on the transparent base material 120 by PECVD, the thickness is formed of 3 to 100nm to transmit visible light Is 70% or more.

상기 유기화합물박막(142)의 상면에는 실리콘계 무기화합물박막(144)이 구비된다. 상기 실리콘계 무기화합물(144)은 PECVD을 통해 형성된 것으로, SiOX, SiOxNy 중 어느 하나가 적용되며, 1000㎚ 이하의 두께를 갖도록 구성된다.An upper surface of the organic compound thin film 142 is provided with a silicon-based inorganic compound thin film 144. The silicon based inorganic compound 144 may be formed through the PECVD, and applying any one of the X SiO, SiO x N y is, is configured to have a thickness of not more than 1000㎚.

한편, 상기 유기화합물박막(142)과 무기화합물박막(144)은 도 3에 도시된 바와 같이, 다수 층이 적층되도록 구성할 수도 있다.Meanwhile, the organic compound thin film 142 and the inorganic compound thin film 144 may be configured such that a plurality of layers are stacked as shown in FIG. 3.

도 3은 본 발명에 의한 투습방지막이 구비된 기판의 다른 실시예의 구성을 개략적으로 나타낸 모식도이다.Figure 3 is a schematic diagram schematically showing the configuration of another embodiment of a substrate with a moisture barrier film according to the present invention.

도 3과 같이, 상기 투명모재(120) 상면에 실리콘계 유기화합물박막(142)과 실리콘계 무기화합물박막(144)을 형성하고, 상기 실리콘계 무기화합물박막(144) 상면에 다시 실리콘계 유기화합물박막(142)과 실리콘계 무기화합물박막(144)을 순차적으로 형성하여 상기 투습방지막(140)이 여러 층으로 적층 형성되도록 구성할 수도 있음은 자명하다.As shown in FIG. 3, a silicon organic compound thin film 142 and a silicon inorganic compound thin film 144 are formed on an upper surface of the transparent base material 120, and a silicon organic compound thin film 142 is formed on an upper surface of the silicon inorganic compound thin film 144. The silicon-based inorganic compound thin film 144 may be sequentially formed so that the moisture barrier film 140 may be laminated in multiple layers.

이하 상기와 같이 구성되는 기판(100)을 제조하기 위한 막코팅장치의 구성을 살펴본다.Hereinafter, the structure of the film coating apparatus for manufacturing the substrate 100 configured as described above will be described.

도 4에는 본 발명에 의한 투습방지막이 구비된 기판의 제조방법에 사용되는 막코팅장치의 구성을 나타낸 개략도가 도시되어 있다.Figure 4 is a schematic diagram showing the configuration of a film coating apparatus used in the method for producing a substrate with a moisture barrier film according to the present invention.

도면과 같이, 막코팅장치(200)는 투명모재(120)의 하면에 실리콘계 유기화합 물박막(142)과 실리콘계 무기화합물박막(144)을 동일 공간 내에서 순차적으로 형성할 수 있도록 구성된다.As shown in the drawing, the film coating apparatus 200 is configured to sequentially form the silicon-based organic compound thin film 142 and the silicon-based inorganic compound thin film 144 on the lower surface of the transparent base material 120 in the same space.

즉, 상기 막코팅장치(200)는 스테인리스스틸로 제조된 진공챔버(210)에 의해 작업 공간이 형성되며, 상기 진공챔버(210) 상부에는 설치지그(220)가 구비된다. 상기 설치지그(220)는 진공챔버(210) 내부에서 회전 가능하도록 설치되며, 상기 설치지그(220)의 하면에는 투명모재(120)가 설치된다.That is, the film coating apparatus 200 is formed by a vacuum chamber 210 made of stainless steel, the installation jig 220 is provided on the vacuum chamber 210. The installation jig 220 is installed to be rotatable inside the vacuum chamber 210, and the transparent base material 120 is installed on the bottom surface of the installation jig 220.

그리고, 상기 설치지그(220)는 알에프전원수단(230)과 연결된다. 상기 알에프전원수단(230)은 상기 설치지그(220)에 알에프 전원을 공급하여 플라즈마가 발생되도록 하는 구성이다.The installation jig 220 is connected to the RF power supply unit 230. The RF power supply unit 230 is configured to supply the RF power to the installation jig 220 to generate a plasma.

상기 진공챔버(210) 좌측에는 가스공급수단(240)이 구비된다. 상기 가스공급수단(240)은 진공챔버(210) 외부에서 내부로 가스를 공급하여 PECVD 코팅 공정이 이루어지도록 하는 구성이다.Gas supply means 240 is provided on the left side of the vacuum chamber 210. The gas supply means 240 is configured to supply a gas from the outside of the vacuum chamber 210 to the inside to perform a PECVD coating process.

즉, 상기 가스공급수단(240)은 PECVD에 필요한 HMDSO (Hexamethyldisiloxane)와 혼합가스 및 반응가스를 진공챔버(210) 내부로 주입하게 된다.That is, the gas supply unit 240 injects HMDSO (Hexamethyldisiloxane), a mixed gas, and a reactant gas necessary for PECVD into the vacuum chamber 210.

상기 진공챔버(210)의 우측에는 진공발생수단(250)이 구비된다. 상기 진공발생수단(250)은 다수 펌프와 밸브를 포함하여 구성되며, 상기 진공챔버(210) 내부를 진공 분위기로 만는 역할을 수행한다.The right side of the vacuum chamber 210 is provided with a vacuum generating means 250. The vacuum generating means 250 includes a plurality of pumps and valves, and serves to make the inside of the vacuum chamber 210 into a vacuum atmosphere.

상기 진공챔버(210) 내부 우측에는 이온빔장치(260)가 구비된다. 상기 이온빔장치(260)는 투명모재(120)에 이온빔을 조사하여 투명모재(120) 하면을 전처리하 기 위한 구성이다.An ion beam device 260 is provided at the right side inside the vacuum chamber 210. The ion beam device 260 is configured to pre-treat the lower surface of the transparent base material 120 by irradiating the ion beam to the transparent base material 120.

이하 본 발명의 실시예에 적용된 막코팅장치(200)의 구성을 상세하게 설명한다.Hereinafter, the configuration of the film coating apparatus 200 applied to the embodiment of the present invention will be described in detail.

본 발명의 실시예에서 진공챔버(210)는 800㎜(F) × 900㎜(l)의 크기를 가지며, 상기 진공챔버(210) 내부를 진공 분위기로 만들기 위한 펌프는 고진공펌프 및 저진공펌프가 적용되었다.In the embodiment of the present invention, the vacuum chamber 210 has a size of 800 mm (F) × 900 mm (l), the pump for making the interior of the vacuum chamber 210 in a vacuum atmosphere is a high vacuum pump and a low vacuum pump Applied.

보다 상세하게는 상기 고진공펌프는 유확산펌프가 적용되어 10-6torr까지 진공도를 유지할 수 있으며, 저진공펌프로는 1500l/min.의 용량을 갖는 로터리 베인 펌프를 사용하였다.More specifically, the high vacuum pump is applied with a diffusion pump to maintain a vacuum degree up to 10 -6 torr, and the low vacuum pump uses a rotary vane pump having a capacity of 1500 l / min.

이러한 진공발생수단(250)에 의해 상기 진공챔버(210) 내부는 1시간 이내에 5x10-6torr의 진공도를 얻을 수 있으며 30분 이내에 투습방지막(140)을 형성할 수 있는 진공도에 도달할 수 있었다.By the vacuum generating means 250, the inside of the vacuum chamber 210 can obtain a degree of vacuum of 5x10 -6 torr within 1 hour and can reach a degree of vacuum capable of forming the moisture barrier film 140 within 30 minutes.

상기 가스공급수단(240)은 플라즈마를 발생시키기 위해 순수한 가스를 정확하게 진공챔버(210) 내에 공급할 수 있도록 하고, 펌프의 용량, 진공챔버(210) 용적에 맞추어 결정되어야 한다.The gas supply means 240 is able to accurately supply the pure gas into the vacuum chamber 210 to generate a plasma, and should be determined according to the capacity of the pump and the volume of the vacuum chamber 210.

이를 위해 본 발명의 실시예에서는 플라즈마를 발생시키는 기본가스로 아르곤(Ar)이 적용됨에 따라 100sccm의 용량을 갖는 Mass Flow Meter를 사용하였으며 산소, 질소 등의 반응가스 주입을 위해서는 50sccm의 용량을 갖는 Mass Flow Meter를 사용하였다.To this end, in the embodiment of the present invention, a mass flow meter having a capacity of 100 sccm is used as argon (Ar) is applied as a base gas generating plasma, and a mass having a capacity of 50 sccm for injection of reaction gas such as oxygen and nitrogen is used. Flow Meter was used.

그리고, 상기 설치지그(220)는 플라즈마 중합 공정을 위해 알에프전원수단(230)과 연결하였으며, 상기 투습방지막(140)의 균일성 확보를 위해 0 ~ 100rpm으로 회전할 수 있게 제작되었다. In addition, the installation jig 220 was connected to the RF power supply unit 230 for the plasma polymerization process, and was manufactured to rotate at 0 to 100 rpm to ensure uniformity of the moisture barrier film 140.

따라서, 상기와 같이 구성되는 막코팅장치(200)를 이용하면, 상기 진공챔버(210) 내에서 투명모재(120)의 전처리와 산화물박막(142) 형성 및 실리콘계화합물(144)의 형성이 모두 실시 가능하게 된다.Therefore, using the film coating apparatus 200 configured as described above, both the pretreatment of the transparent base material 120 and the formation of the oxide thin film 142 and the formation of the silicon-based compound 144 are performed in the vacuum chamber 210. It becomes possible.

이하 상기와 같이 구성되는 막코팅장치(200)를 이용하여 투습방지막이 구비된 기판을 제조하는 방법을 첨부된 도 5를 참조하여 설명한다.Hereinafter, a method of manufacturing a substrate with a moisture barrier film using the membrane coating apparatus 200 configured as described above will be described with reference to FIG. 5.

도 5에는 본 발명에 의한 투습방지막이 구비된 기판의 제조방법을 나타낸 순서도가 도시되어 있다.5 is a flowchart illustrating a method of manufacturing a substrate provided with a moisture barrier film according to the present invention.

도면과 같이, 투습방지막(140)이 구비된 기판을 제조하는 방법은, 크게 폴리머로 이루어진 투명모재(120)의 표면을 이온빔을 이용하여 전처리하는 전처리단계(S100)와, 전처리된 투명모재(120)의 표면에 투습방지막(140)을 형성하는 투습방지막형성단계(S200)로 이루어진다.As shown in the drawing, a method of manufacturing a substrate provided with the moisture barrier film 140 includes a pretreatment step (S100) of pretreating the surface of the transparent base material 120 largely made of polymer using an ion beam, and the pretreated transparent base material 120 ) Is formed of a moisture barrier film forming step (S200) of forming a moisture barrier film 140 on the surface.

상기 전처리단계(S100)는 설치지그(220)의 하면에 투명모재(120)를 설치한 후 상기 저진공펌프와 고진공펌프를 이용하여 진공챔버(210) 내부의 진공도를 1x10-5torr 로 맞춘 다음 유지하게 된다.In the pretreatment step (S100), after the transparent base material 120 is installed on the lower surface of the installation jig 220, the vacuum degree inside the vacuum chamber 210 is adjusted to 1x10 -5 torr using the low vacuum pump and the high vacuum pump. Will be maintained.

이런 상태에서 상기 이온빔장치(260)를 작동시켜 상기 투명모재(120) 상에 존재하는 흡착가스 입자들과 오염물질을 제거하게 된다.In this state, the ion beam device 260 is operated to remove the adsorbed gas particles and the contaminants present on the transparent base material 120.

즉, 본 발명의 실시예에서 상기 이온빔장치(260)는 필라멘트로부터 열전자를 방출하여 플라즈마를 발생시키고 플라즈마에 존재하는 이온들을 가속시켜 방출하는 엔드홀(End-Hall) 방식이 적용되었다.That is, in the embodiment of the present invention, the ion beam device 260 generates a plasma by emitting hot electrons from the filament, and an end-hole method for accelerating and emitting ions present in the plasma is applied.

보다 상세하게는 상기 진공챔버(210) 내부에 혼합가스(Ar)을 주입하여 5x10-5torr 내지 5x10-4torr의 진공도를 유지하였고, 필라멘트의 파워는 약 400W(20A ×20V), 이온빔장치(260)의 파워는 180W (2A × 90V)로 설정하여 3분 내지 5분 실시하였다.More specifically, the mixed gas (Ar) was injected into the vacuum chamber 210 to maintain a vacuum degree of 5x10 -5 torr to 5x10 -4 torr, and the power of the filament was about 400W (20A x 20V) and the ion beam device ( The power of 260 was set to 180 W (2A x 90V) and implemented for 3 to 5 minutes.

상기와 같은 과정에 따라 전처리단계(S100)가 완료되면, 상기 투습방지막형성단계(S200)가 실시된다.When the pretreatment step S100 is completed according to the above process, the moisture barrier film forming step S200 is performed.

상기 투습방지막형성단계(S200)는 실리콘계 유기화합물박막(142)을 형성하는 유기화합물박막형성과정(S220)과, 상기 유기화합물박막(142) 상면에 실리콘계 무기화합물박막(144)을 형성하는 무기화합물박막형성과정(S240)이 순차적으로 실시되어 투습방지막(140)이 형성되는 과정이다.The moisture barrier film forming step (S200) is an organic compound thin film formation process (S220) for forming a silicon-based organic compound thin film 142, and an inorganic compound for forming a silicon-based inorganic compound thin film 144 on the organic compound thin film 142. The thin film forming process (S240) is performed sequentially to form a moisture barrier film 140.

상기 유기화합물박막형성과정(S220)에서 형성되는 실리콘계 유기화합물박막(142)은 PECVD법에 의해 SiCxHyOz물질을 3㎚ 내지 100㎚의 두께로 증착시키는 과정이다.The silicon-based organic compound thin film 142 formed in the organic compound thin film forming process S220 is a process of depositing a SiC x H y O z material to a thickness of 3 nm to 100 nm by PECVD.

그리고, 상기 실리콘계 무기화합물박막형성과정(S240)은 상기 유기화합물박막(142) 상면에 PECVD법을 이용하여 투습도를 조절할 수 있는 실리콘계 무기화합물을 증착시켜 무기화합물박막(144)을 형성하는 과정이다.The silicon-based inorganic compound thin film forming process (S240) is a process of forming an inorganic compound thin film 144 by depositing a silicon-based inorganic compound that can control the moisture permeability using PECVD on the upper surface of the organic compound thin film 142.

이를 위해 상기 실리콘계 유기화합물박막형성과정(S220)에서는 진공챔버(210) 내부에 HMDSO 기체를 주입하였으며, 상기 진공챔버(210) 내부의 바람직한 진공도를 맞추기 위해 아르곤(Ar), 캐리어 가스 및 반응가스(산소(O2))를 주입하였다.To this end, in the silicon-based organic compound thin film forming process (S220), HMDSO gas is injected into the vacuum chamber 210, and argon (Ar), a carrier gas, and a reaction gas (In order to meet a desired degree of vacuum in the vacuum chamber 210). Oxygen (O 2 )) was injected.

상기한 조건에서 상기 알에프전원수단(230)에 전원을 인가하여 0.3w/㎠이하의 프라즈마 파워를 발생시켜 실리콘계 유기화합물박막(144)이 증착되도록 하였다.Under the above conditions, power was applied to the RF power supply unit 230 to generate plasma power of 0.3 w / cm 2 or less so that the silicon-based organic compound thin film 144 was deposited.

실리콘계 무기화합물박막형성과정(S240)에서는 진공챔버(210) 내부에 HMDSO 기체를 주입하였으며, 상기 진공챔버(210) 내부의 바람직한 진공도를 맞추기 위해 아르곤(Ar), 캐리어 가스 및 반응가스(산소(O2), 질소(N2), 또는 산소 질소 혼합 가스)를 주입하였다.In the process of forming a silicon-based inorganic compound thin film (S240), HMDSO gas was injected into the vacuum chamber 210, and argon (Ar), a carrier gas, and a reaction gas (oxygen (O) were used to meet a desired degree of vacuum in the vacuum chamber 210. 2 ), nitrogen (N 2 ), or oxygen nitrogen mixed gas) was injected.

상기한 조건에서 상기 알에프전원수단(230)에 전원을 인가하여 0.7w/㎠이상의 플라즈마 파워를 인가시켜 상기 실리콘 유기화합물박막(142) 상면에 실리콘계 무기화합물박막(144)이 증착되도록 하였다.Under the above conditions, the RF power supply unit 230 was supplied with power to apply plasma power of 0.7 w / cm 2 or more so that the silicon-based inorganic compound thin film 144 was deposited on the upper surface of the silicon organic compound thin film 142.

상기 실리콘계 무기화합물박막(144)은 Tri-methyl과 결합하고 있는 실리콘(Si) 원자가 플라즈마 에너지에 의해 파괴되어 SixOy 와 같은 단량체(Monomer)들이 형성되고, 이렇게 분해된 단량체들이 플라즈마 에너지에 의해 다시 반응기체 (산소 또는 질소)들과 중합되는 중합 반응이 표면에서 발생하여 SiOX, SiOxNy 중 어느 하나로 이루어진 실리콘계 무기화합물박막(144)이 형성되는 것이다.In the silicon-based inorganic compound thin film 144, silicon (Si) atoms bonded to tri-methyl are destroyed by plasma energy to form monomers such as Si x O y, and the decomposed monomers are formed by plasma energy. Again, a polymerization reaction occurs that polymerizes with the reactants (oxygen or nitrogen) on the surface, causing SiO X , SiO x N y Silicon-based inorganic compound thin film 144 is formed of any one of.

그리고, 상기 실리콘계 무기화합물박막(144)은 RF 전력이 클수록, 진공챔 버(210) 내에 HMDSO 기체량이 많을수록 증착속도가 증가되며, 상기 투습방지막형성단계(S200)는 전술한 바와 같이 다수회 반복 실시가 가능하다.In addition, as the silicon-based inorganic compound thin film 144 has a larger RF power and a larger amount of HMDSO gas in the vacuum chamber 210, the deposition rate increases, and the moisture barrier film forming step (S200) is repeated a plurality of times as described above. Is possible.

이하 상기와 같은 제조방법에 따라 실시된 본 발명의 실시예를 첨부된 도 6 및 도 7을 참조하여 설명한다.Hereinafter, an embodiment of the present invention carried out according to the above-described manufacturing method will be described with reference to FIGS. 6 and 7.

도 6에는 본 발명에 의한 실리콘계 유기화합물박막/ 실리콘계 무기화합물박막으로 이루어진 투습방지막이 구비된 기판의 비교예 표면 확대 사진이 도시되어 있고, 도 7에는 상기 실리콘계 유기화합물박막과 실리콘계 무기화합물박막이 연속적으로 3회 반복 코팅된 투습방지막이 구비된 기판의 실시예 표면 확대 사진이 도시되어 있다.6 is an enlarged photograph of a surface of a comparative example of a substrate having a moisture barrier film formed of a silicon organic compound thin film / silicone inorganic compound thin film according to the present invention, and FIG. 7 shows that the silicon organic compound thin film and a silicon inorganic compound thin film are continuously An enlarged photograph of an embodiment surface of a substrate having a moisture barrier film coated three times is shown.

[실시 예1]Example 1

- 투명모재 : 재질 PET, 두께 188㎛, 투과도 92% -Transparent substrate: Material PET, thickness 188㎛, transmittance 92%

- 초기 진공도 : 3 × 10-5torr Initial vacuum degree: 3 × 10 -5 torr

- 이온빔 전처리-Ion beam pretreatment

* 전처리단계에서 작업 진공도 : 2 × 10-4torr* Working vacuum degree in pretreatment stage: 2 × 10 -4 torr

* 전처리용 이온빔 플라즈마 Power : 100V ×1.5A  * Pretreatment ion beam plasma power: 100V × 1.5A

- 실리콘계 유기화합물 코팅 -Silicone organic compound coating

* 작업 가스 : HMDSO(8%), 알곤 (75%), 산소(17%)  * Working gas: HMDSO (8%), argon (75%), oxygen (17%)

* 작업 진공도 : 1.5 × 10-1torr* Working vacuum degree: 1.5 × 10 -1 torr

* RF 전력 : 30w (시편 지그 넓이- 100㎠)  * RF power: 30w (sample jig width-100㎠)

* 실리콘계 유기화합물 코팅 시간: 2 min  * Silicone organic compound coating time: 2 min

* 실리콘계 유기화합물 코팅 두께 : 50㎚  * Silicon-based organic compound coating thickness: 50nm

- 코팅 필름의 특성 : 코팅 물질 SiCxHyOz, 투과도 89%-Characteristics of the coating film: coating material SiC x H y O z , transmittance 89%

- 실리콘계 무기화합물 코팅 -Silicone inorganic compound coating

* 작업 가스 : HMDSO(8%), 알곤 (75%), 산소(17%)  * Working gas: HMDSO (8%), argon (75%), oxygen (17%)

* 작업 진공도 : 1.5 × 10-1torr* Working vacuum degree: 1.5 × 10 -1 torr

* RF 전력 : 200w (시편 지그 넓이- 100㎠)  * RF power: 200w (sample jig width-100㎠)

* 실리콘계 유기화합물 코팅 시간: 20min  * Silicone organic compound coating time: 20min

* 실리콘계 유기화합물 코팅 두께 : 200nm  * Silicon organic compound coating thickness: 200nm

- 코팅 필름의 특성 : 코팅 물질 SiOx, 투과도 85%-Characteristics of the coating film: coating material SiO x , transmittance 85%

상기한 [실시예 1]의 작업 조건에 따라 연성 PET로 형성된 투명모재에 PECVD법으로 실리콘계 유기화합물과 실리콘계 무기화합물을 형성하여 전자 현미경으로 관찰하여 보면, 도 6과 같이 코팅 입자들이 매우 조대하지만 유기화합물과 무기화합물이 복합 코팅되어 투습도를 감소시키고 있음을 알 수 있다.According to the working conditions of [Example 1], the silicon-based organic compound and the silicon-based inorganic compound were formed on the transparent base material formed of the flexible PET by PECVD and observed with an electron microscope. It can be seen that the compound and the inorganic compound are composite coated to reduce the moisture permeability.

아울러 본 발명에서는 Polymer 투명모재에 상기 실리콘계 유기화합물과 무기화합물박막을 순차적으로 2회 이상 반복 코팅함으로서 더욱 우수한 투습도 투산소도를 감소시킬 수 있었으며 그 구체적인 작업 조건은 [실시예 2]에 제시하였다.In addition, in the present invention, by repeatedly coating the silicon-based organic compound and the inorganic compound thin film on the polymer transparent base material two times or more, it was possible to reduce the moisture permeability and the oxygen permeability even more and the specific working conditions are shown in [Example 2].

[실시예 2][Example 2]

- 투명모재 : 재질 PET, 두께 188㎛, 투과도 92% -Transparent substrate: Material PET, thickness 188㎛, transmittance 92%

- 초기 진공도 : 3 × 10-5torr Initial vacuum degree: 3 × 10 -5 torr

- 이온빔 전처리-Ion beam pretreatment

* 전처리단계에서 작업 진공도 : 2 × 10-4torr* Working vacuum degree in pretreatment stage: 2 × 10 -4 torr

* 전처리용 이온빔 플라즈마 Power : 100V ×1.5A  * Pretreatment ion beam plasma power: 100V × 1.5A

- 실리콘계 유기화합물 코팅 (1회) -Silicone organic compound coating (1 time)

* 작업 가스 : HMDSO(8%), 알곤 (75%), 산소(17%)  * Working gas: HMDSO (8%), argon (75%), oxygen (17%)

* 작업 진공도 : 1.5 × 10-1torr* Working vacuum degree: 1.5 × 10 -1 torr

* RF 전력 : 30w (시편 지그 넓이- 100㎠)  * RF power: 30w (sample jig width-100㎠)

* 실리콘계 유기화합물 코팅 시간: 2min  * Silicon organic compound coating time: 2min

* 실리콘계 유기화합물 코팅 두께 : 50㎚  * Silicon-based organic compound coating thickness: 50nm

- 코팅 필름의 특성 : 코팅 물질 SiCxHyOz, 투과도 89%-Characteristics of the coating film: coating material SiC x H y O z , transmittance 89%

- 실리콘계 무기화합물 코팅 (1회) -Silicone inorganic compound coating (1 time)

* 작업 가스 : HMDSO(8%), 알곤 (75%), 산소(17%)  * Working gas: HMDSO (8%), argon (75%), oxygen (17%)

* 작업 진공도 : 1.5 × 10-1torr* Working vacuum degree: 1.5 × 10 -1 torr

* RF 전력 : 200w (시편 지그 넓이- 100㎠)  * RF power: 200w (sample jig width-100㎠)

* 실리콘계 유기화합물 코팅 시간: 20min  * Silicone organic compound coating time: 20min

* 실리콘계 유기화합물 코팅 두께 : 200nm  * Silicon organic compound coating thickness: 200nm

- 실리콘계 유기화합물 코팅 (2회)-Silicone organic compound coating (2 times)

* 실리콘계 유기화합물 코팅 (1회)와 동일 조건  * Same condition as silicone organic compound coating (1 time)

- 실리콘계 무기화합물 코팅 (2회)-Silicone inorganic compound coating (2 times)

* 실리콘계 무기화합물 코팅 (1회)와 동일 조건  * Same condition as silicone inorganic compound coating (1 time)

- 실리콘계 유기화합물 코팅 (3회)-Silicone organic compound coating (3 times)

* 실리콘계 유기화합물 코팅 (1회)와 동일 조건  * Same condition as silicone organic compound coating (1 time)

- 실리콘계 무기화합물 코팅 (3회)-Silicone inorganic compound coating (3 times)

* 실리콘계 무기화합물 코팅 (1회)와 동일 조건  * Same condition as silicone inorganic compound coating (1 time)

- 코팅 필름의 특성 : 코팅 물질 SiCxHyOz / SiOx / SiCxHyOz / SiOx / SiCxHyOz / SiOx, 투과도 83%, 투습도 1.0 x 10-3g/㎡/day 이하-Characteristics of the coating film: coating material SiC x H y O z Of SiO x / SiC x H y O z / SiO x / SiC x H y O z / SiO x , Permeability: 83%, Water vapor transmission rate 1.0 x 10 -3 g / ㎡ / day or less

[실시예 2]의 조건에서 형성된 실리콘계 유기화합물/실리콘계 무기화합물의 3층 연속 코팅층을 포함하는 투습방지막(140)의 표면을 전자 현미경으로 관찰한 결과, [실시예 1]에서 나타났던 산화실리콘 박막 입자의 경계면이 채워지고 있음을 알 수 있었다. The silicon oxide thin film which appeared in [Example 1] was observed by the electron microscope when the surface of the moisture barrier film 140 including the three continuous coating layer of the silicon type organic compound / silicone type inorganic compound formed under the conditions of [Example 2] was observed. It was found that the interface of the particles was filling.

그리고, [실시예 2]에 따라 제조된 기판(100)은 40%의 상대습도에서 1×10-3g/㎡/day의 투습도를 나타내었다.In addition, the substrate 100 prepared according to [Example 2] exhibited a moisture permeability of 1 × 10 −3 g / m 2 / day at a relative humidity of 40%.

따라서, 상기 실리콘계 유기화합물과 실리콘계 무기화합물을 순차적으로 다수회 실시하여 투습방지막(140)을 다수 층으로 적층 형성하게 될 경우 투습도는 보 다 낮아지게 됨은 분명하다. Therefore, when the silicon-based organic compound and the silicon-based inorganic compound are sequentially performed a plurality of times, the moisture permeability is obviously lowered when the moisture barrier layer 140 is laminated in multiple layers.

이러한 본 발명의 범위는 상기에서 예시한 실시예에 한정되지 않고, 상기와 같은 기술범위 안에서 당업계의 통상의 기술자에게 있어서는 본 발명을 기초로 하는 다른 많은 변형이 가능할 것이다.The scope of the present invention is not limited to the above-described embodiments, and many other modifications based on the present invention will be possible to those skilled in the art within the scope of the present invention.

본 발명에서는, 플라즈마화학증기증착법(PECVD:Plasma Enhanced Chemical Vapor Deposition)을 이용하여 투습방지막이 구비되도록 구성하였다. 따라서, 투습방지막은 가시광선 투과도에 큰 영향을 미치지 않으면서 투습도나 투산소도를 감소시킬 수 있는 이점이 있다.In the present invention, it is configured to be provided with a moisture barrier film by using a plasma enhanced chemical vapor deposition (PECVD). Therefore, the moisture barrier film has an advantage of reducing the moisture permeability and oxygen permeability without significantly affecting the visible light transmittance.

또한, 본 발명에 따르면, 실리콘계 유기화합물과 실리콘계 무기화합물이 동일한 진공챔버 내에서 동일한 공정을 이용하여 형성된다.In addition, according to the present invention, the silicon-based organic compound and the silicon-based inorganic compound are formed using the same process in the same vacuum chamber.

따라서, 생산성이 향상되어 제조 원가가 절감되므로 가격 경쟁력이 향상되는 이점이 있다. As a result, productivity is improved and manufacturing cost is reduced, thereby improving price competitiveness.

뿐만 아니라, 반제품 상태의 기판을 다음 공정으로 이송하는 과정이 생략되므로 불량률이 현저히 낮아지는 이점이 있음은 물론 동일한 PECVD법을 이용하여 연속적으로 유기/무기 다층 박막을 형성함으로써 생산 속도가 여러 코팅법을 사용하는 경우 보다 매우 빠르며 양산 공정 적용이 유리하다는 특징이 있다.In addition, since the process of transferring the semi-finished substrate to the next process is omitted, the defect rate is remarkably lowered, and the organic / inorganic multilayer thin film is continuously formed using the same PECVD method. When used, it is much faster and the mass production process is advantageous.

Claims (10)

폴리머로 이루어지며 이온빔에 의해 표면이 전처리된 투명모재와;A transparent base material composed of a polymer and whose surface is pretreated by an ion beam; 상기 투명모재 일측에 플라즈마화학증기증착법(PECVD:Plasma Enhanced Chemical Vapor Deposition)을 통해 3 내지 100㎚의 두께로 증착된 실리콘계 유기화합물박막과, 상기 실리콘계 유기화합물박막 일측에 PECVD법을 통해 1000㎚ 이하의 두께를 갖도록 형성되어 실리콘계 유기화합물박막 입자의 경계면을 채우며 실리콘계 무기화합물로 구성된 실리콘계 무기화합물박막으로 이루어져 1 × 10-3g/㎡/day 이하의 투습도를 가지는 투습방지막;을 포함하여 구성되며,On one side of the transparent base material (PECVD: Plasma Enhanced Chemical Vapor Deposition) through a silicon-based organic compound thin film deposited to a thickness of 3 to 100nm, and one side of the silicon-based organic compound thin film of 1000nm or less through PECVD It is formed to have a thickness to fill the interface of the silicon-based organic compound thin film particles and made of a silicon-based inorganic compound thin film composed of a silicon-based inorganic compound having a moisture permeability of 1 × 10 -3 g / ㎡ / day or less; 상기 실리콘계 유기화합물박막과 실리콘계 무기화합물박막은 순차적으로 1층 이상 형성됨을 특징으로 하는 투습방지막이 구비된 기판.The silicon-based organic compound thin film and the silicon-based inorganic compound thin film is provided with a moisture barrier film, characterized in that formed sequentially one or more layers. 제 1 항에 있어서, 상기 투명모재는 PC, PET, PES, PEN, PAR, 투명 폴리머 기판 중 어느 하나를 포함하는 것을 특징으로 하는 투습방지막이 구비된 기판.The substrate of claim 1, wherein the transparent base material comprises any one of a PC, PET, PES, PEN, PAR, and a transparent polymer substrate. 제 1 항에 있어서, 상기 실리콘계 무기화합물 박막은 SiOX, SiOxNy 중 어느 하나의 화학적 조성을 갖는 것을 특징으로 하는 투습방지막이 구비된 기판.The substrate of claim 1, wherein the silicon-based inorganic compound thin film has a chemical composition of any one of SiO X and SiO x N y . 삭제delete 제 1 항에 있어서, 상기 실리콘계 유기화합물박막은 SiCxHyOz의 화학적 조성을 특징으로 하는 투습방지막이 구비된 기판.The substrate of claim 1, wherein the silicon-based organic compound thin film has a chemical composition of SiC x H y O z . 제 1 항에 있어서, 상기 실리콘계 무기화합물박막은 1000㎚ 이하의 두께를 갖는 것을 특징으로 하는 투습방지막이 구비된 기판.The substrate according to claim 1, wherein the silicon-based inorganic compound thin film has a thickness of 1000 nm or less. 삭제delete 삭제delete 삭제delete 삭제delete
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KR20240027274A (en) 2022-08-23 2024-03-04 이교웅 Laminated thin film for encapsulation of light emitting diode and organic light emitting display device with the same

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