KR101235082B1 - A board having layer for preventing humidity and transparency conductive layer - Google Patents

A board having layer for preventing humidity and transparency conductive layer Download PDF

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KR101235082B1
KR101235082B1 KR1020110029907A KR20110029907A KR101235082B1 KR 101235082 B1 KR101235082 B1 KR 101235082B1 KR 1020110029907 A KR1020110029907 A KR 1020110029907A KR 20110029907 A KR20110029907 A KR 20110029907A KR 101235082 B1 KR101235082 B1 KR 101235082B1
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thin film
transparent conductive
moisture barrier
silicon
compound thin
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KR20120111444A (en
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이건환
윤정흠
이성훈
김동호
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한국기계연구원
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation

Abstract

본 발명에 의한 투습방지막 및 투명전도성박막이 구비된 기판은, 폴리머로 이루어지며 이온빔에 의해 표면이 전처리된 투명모재와; 상기 투명모재 일측에 플라즈마화학증기증착법(PECVD:Plasma Enhanced Chemical Vapor Deposition)을 통해 형성된 실리콘계 유기화합물박막과, 상기 실리콘계 유기화합물박막 일측에 PECVD법을 통해 형성되어 실리콘계 유기화합물박막 입자의 경계면을 채우며 실리콘계 무기화합물로 구성된 실리콘계 무기화합물박막으로 이루어진 투습방지막과; 상기 투습방지막 외측에 스퍼터링법에 의해 형성된 투명전도성박막을 포함하여 구성됨을 특징으로 한다.The substrate provided with the moisture barrier film and the transparent conductive thin film according to the present invention comprises a transparent base material made of a polymer and whose surface is pretreated by an ion beam; Silicon-based organic compound thin film formed through plasma enhanced chemical vapor deposition (PECVD) on one side of the transparent base material, and formed by PECVD on one side of the silicon-based organic compound thin film to fill the interface of silicon-based organic compound thin film particles and A moisture barrier film made of a silicon-based inorganic compound thin film made of an inorganic compound; It characterized in that it comprises a transparent conductive thin film formed by the sputtering method on the outside of the moisture barrier film.

Description

투습방지막 및 투명전도성박막이 구비된 기판{A board having layer for preventing humidity and transparency conductive layer}A board having layer for preventing humidity and transparency conductive layer

본 발명은 플라즈마화학증기증착법(PECVD:Plasma Enhanced Chemical Vapor Deposition)으로 투명모재상에 실리콘계 유기화합물박막과, 실리콘계 무기화합물박막을 포함하는 투습방지막을 형성하고, 투습방지막 외면에 스퍼터링법을 이용하여 투명전도성박막이 형성되도록 한 투습방지막 및 투명전도성박막이 구비된 기판 및 이의 제조방법에 관한 것이다.The present invention forms a moisture barrier film including a silicon-based organic compound thin film and a silicon-based inorganic compound thin film on a transparent base material by plasma enhanced chemical vapor deposition (PECVD), and is transparent by sputtering on the outer surface of the moisture barrier film. It relates to a substrate provided with a moisture barrier film and a transparent conductive thin film to form a conductive thin film and a manufacturing method thereof.

근래의 전자제품은 다양한 기능이 내장됨과 동시에 휴대 용이성을 위하여 경량화되고 있는 추세이며 액정 표시 장치를 중심으로 Flexible 디스플레이 소자의 실현을 위한 요구도가 증대되고 있는 추세이다. In recent years, electronic products have been built in a variety of functions and at the same time being lightweight for easy portability, and the demand for realizing flexible display devices, especially in liquid crystal displays, is increasing.

이에 따라 Flexible 디스플레이 소자의 표시창은 보다 가벼우면서 내구성이 보장되고 연성(Flexibility)이 우수한 폴리머가 주로 사용되고 있다.Accordingly, a display window of a flexible display device is mainly used with a lighter, more durable and flexible.

그러나, 폴리머로 제조된 표시창의 경우 육안으로 확인은 어려우나 확대해보면 입자가 조대하여 미세구멍이 형성됨이 일반적이며, 이러한 미세구멍을 통해 습기나 공기가 표시창을 투과하게 되어 Flexible 디스플레이 소자의 수명을 단축시켜 결국 작동 불능을 야기하게 되는 문제점이 있다. However, in the case of a display window made of polymer, it is difficult to check with the naked eye, but when enlarged, particles are coarse to form micropores, and moisture or air penetrate the display window through these micropores, which shortens the life of the flexible display device. Eventually there is a problem that causes inoperability.

이러한 문제점을 해결하기 위해 다양한 투습방지막과 투명 전도성 박막의 개발이 진행되고 있으나, 투습 또는 투산소 방지 특성과 투명 전도 특성을 동시에 만족시킬 수 있는 방법이 개발되지 못하고 있는 실정이다.In order to solve these problems, development of various moisture barrier films and transparent conductive thin films is being conducted, but a method for simultaneously satisfying moisture barrier or anti-oxygen resistance and transparent conductivity has not been developed.

본 발명의 목적은 상기와 같은 종래 기술의 문제점을 해결하기 위한 것으로, 플라즈마화학증기증착법(PECVD:Plasma Enhanced Chemical Vapor Deposition)으로 투명모재상에 실리콘계 유기화합물박막과, 실리콘계 무기화합물박막을 포함하는 투습방지막을 형성하고, 투습방지막 외면에 스퍼터링법을 이용하여 투명전도성박막이 형성되도록 하여 투습 또는 투산소 방지 특성과 전도 특성을 동시에 만족시킬 수 있도록 한 투습방지막 및 투명전도성박막이 구비된 기판 및 이의 제조방법을 제공하는 것에 있다.An object of the present invention is to solve the problems of the prior art as described above, moisture permeation comprising a silicon-based organic compound thin film and a silicon-based inorganic compound thin film on a transparent base material by plasma enhanced chemical vapor deposition (PECVD) A substrate having a moisture barrier film and a transparent conductive film formed thereon so that a transparent conductive thin film is formed on the outer surface of the moisture barrier film by using a sputtering method to satisfy both moisture permeation or oxygen permeation prevention properties and conduction properties, and a preparation thereof. To provide a method.

본 발명에 의한 투습방지막 및 투명전도성박막이 구비된 기판은, 폴리머로 이루어지며 이온빔에 의해 표면이 전처리된 투명모재와; 상기 투명모재 일측에 플라즈마화학증기증착법(PECVD:Plasma Enhanced Chemical Vapor Deposition)을 통해 형성된 실리콘계 유기화합물박막과, 상기 실리콘계 유기화합물박막 일측에 PECVD법을 통해 형성되어 실리콘계 유기화합물박막 입자의 경계면을 채우며 실리콘계 무기화합물로 구성된 실리콘계 무기화합물박막으로 이루어진 투습방지막과; 상기 투습방지막 외측에 스퍼터링법에 의해 형성된 투명전도성박막을 포함하여 구성됨을 특징으로 한다.The substrate provided with the moisture barrier film and the transparent conductive thin film according to the present invention comprises a transparent base material made of a polymer and whose surface is pretreated by an ion beam; Silicon-based organic compound thin film formed through plasma enhanced chemical vapor deposition (PECVD) on one side of the transparent base material, and formed by PECVD on one side of the silicon-based organic compound thin film to fill the interface of silicon-based organic compound thin film particles and A moisture barrier film made of a silicon-based inorganic compound thin film made of an inorganic compound; It characterized in that it comprises a transparent conductive thin film formed by the sputtering method on the outside of the moisture barrier film.

상기 투명전도성박막은 ITO, IZO, AZO, GZO 중 어느 하나인 것을 특징으로 한다.The transparent conductive thin film is characterized in that any one of ITO, IZO, AZO, GZO.

상기 투명전도성박막은 100 내지 1000㎚의 두께로 형성됨을 특징으로 한다.The transparent conductive thin film is characterized in that it is formed to a thickness of 100 to 1000nm.

상기 투명전도성박막은 50 내지 10 Ω/□의 면저항값을 갖는 것을 특징으로 한다.The transparent conductive thin film is characterized in that it has a sheet resistance value of 50 to 10 Ω / □.

상기 투습방지막은 1 × 10-3g/㎡/day 이하의 투습도를 갖는 것을 특징으로 한다.The moisture barrier film has a water vapor transmission rate of 1 × 10 -3 g / ㎡ / day or less.

상기 실리콘계 유기화합물박막과 실리콘계 무기화합물박막은 순차적으로 1층 이상 형성됨을 특징으로 한다.The silicon-based organic compound thin film and the silicon-based inorganic compound thin film may be sequentially formed in one or more layers.

상기 투명모재는 PC, PET, PES, PEN, PAR, 투명 폴리머 기판 중 어느 하나를 포함하는 것을 특징으로 한다.The transparent base material is characterized in that it comprises any one of PC, PET, PES, PEN, PAR, transparent polymer substrate.

상기 실리콘계 무기화합물박막은 SiOX, SiOxNy 중 어느 하나의 화학적 조성을 갖는 것을 특징으로 한다.The silicon based inorganic compound film is characterized in having any of the chemical composition of SiO X, SiO x N y.

상기 실리콘계 유기화합물박막은 SiCxHyOz의 화학적 조성을 특징으로 한다.The silicon-based organic compound thin film is characterized by the chemical composition of SiC x H y O z .

상기 실리콘계 무기화합물박막은 1000㎚ 이하의 두께를 갖는 것을 특징으로 한다.The silicon-based inorganic compound thin film is characterized by having a thickness of less than 1000nm.

본 발명에 의한 투습방지막 및 투명전도성박막이 구비된 기판의 제조방법은, 폴리머로 이루어진 투명모재의 표면을 이온빔을 이용하여 전처리하는 전처리단계와; 상기 투명모재에 PECVD법으로 실리콘계 유기화합물박막을 형성하는 유기화합물박막형성과정과, 상기 유기화합물박막 외면에 동일한 PECVD법으로 실리콘계 무기화합물박막을 형성하는 무기화합물박막형성과정을 순차적으로 실시하여 투습방지막을 형성하는 투습방지막형성단계와; 상기 투습방지막 외면에 스퍼터링법을 이용하여 투명전도성박막을 형성하는 투명전도성박막형성단계;로 이루어지는 것을 특징으로 한다.According to the present invention, a method of manufacturing a substrate provided with a moisture barrier film and a transparent conductive thin film includes a pretreatment step of pretreating a surface of a transparent base material made of a polymer by using an ion beam; An organic compound thin film forming process of forming a silicon-based organic compound thin film on the transparent base material by PECVD and an inorganic compound thin film forming process of forming a silicon-based inorganic compound thin film by the same PECVD method on the outer surface of the organic compound thin film are sequentially performed. Forming a moisture barrier film; And a transparent conductive thin film forming step of forming a transparent conductive thin film on the outer surface of the moisture barrier film by using a sputtering method.

상기 투습방지막형성단계는 다수회 실시됨을 특징으로 한다.The moisture barrier film forming step is characterized in that it is carried out a plurality of times.

상기 전처리단계, 투습방지막형성단계, 투명전도성박막형성단계는 동일한 진공챔버 내부에서 연속적으로 실시됨을 특징으로 한다.The pretreatment step, the moisture barrier film forming step, and the transparent conductive thin film forming step are performed continuously in the same vacuum chamber.

상기 투명전도성박막형성단계에서 350V 이하의 저전압 플라즈마가 적용됨을 특징으로 한다.In the transparent conductive thin film forming step, a low voltage plasma of 350V or less is applied.

본 발명에서는, 플라즈마화학증기증착법(PECVD:Plasma Enhanced Chemical Vapor Deposition)을 이용하여 투습방지막을 형성하고, 투습방지막의 일측에 스퍼터링방법으로 투명전도성박막이 형성되도록 구성하였다.In the present invention, a moisture vapor barrier is formed by using plasma enhanced chemical vapor deposition (PECVD), and a transparent conductive thin film is formed on one side of the vapor barrier by sputtering.

따라서, 투습방지막은 가시광선 투과도에 큰 영향을 미치지 않으면서 투습도나 투산소도를 감소시킬 수 있는 이점이 있다.Therefore, the moisture barrier film has an advantage of reducing the moisture permeability and oxygen permeability without significantly affecting the visible light transmittance.

또한, 본 발명에 따르면, 실리콘계 유기화합물과 실리콘계 무기화합물이 동일한 진공챔버 내에서 동일한 공정을 이용하여 형성된다.In addition, according to the present invention, the silicon-based organic compound and the silicon-based inorganic compound are formed using the same process in the same vacuum chamber.

즉, 반제품 상태의 기판을 다음 공정으로 이송하는 과정이 생략되므로 불량률이 현저히 낮아지는 이점이 있음은 물론 동일한 PECVD법을 이용하여 연속적으로 유기/무기 다층 박막을 형성함으로써 생산 속도가 여러 코팅법을 사용하는 경우 보다 매우 빠르며 양산 공정 적용이 유리하다는 특징이 있다.In other words, the process of transferring the semi-finished substrate to the next process is omitted, so the defect rate is remarkably lowered, and the organic / inorganic multilayer thin film is continuously formed using the same PECVD method. It is much faster than that, and the mass production process is advantageous.

뿐만 아니라, 투명전도성박막이 구비됨에 따라 우수한 전기 전도성을 갖게 되므로 종래의 기술로는 실현할 수 없었던 유연 디스플레이, 유연 태양전지용 투명 전도성 기판 등 다양한 대상에 적용 가능한 이점이 있다.In addition, since the transparent conductive thin film is provided with excellent electrical conductivity, there is an advantage that can be applied to various objects such as a flexible display, a transparent conductive substrate for a flexible solar cell, which could not be realized by the prior art.

도 1 은 본 발명에 의한 투습방지막 및 투명전도성박막이 구비된 기판의 외관을 보인 실물 사진.
도 2 는 본 발명에 의한 투습방지막 및 투명전도성박막이 구비된 기판의 일실시예의 구성을 개략적으로 나타낸 모식도.
도 3 은 본 발명에 의한 투습방지막 및 투명전도성박막이 구비된 기판의 다른 실시예의 구성을 개략적으로 나타낸 모식도.
도 4 는 본 발명에 의한 투습방지막 및 투명전도성박막이 구비된 기판의 제조방법에서 일 단계인 투습방지막형성단계를 위한 막코팅장치의 구성을 개략적으로 나타낸 구성도.
도 5 는 본 발명에 의한 투습방지막 및 투명전도성박막이 구비된 기판의 제조방법을 나타낸 공정 순서도.
도 6 은 본 발명에 의한 투습방지막 및 투명전도성박막이 구비된 기판의 일실시예의 구성을 개략적으로 나타낸 3차원 모식도.
도 7 은 본 발명에 의한 투습방지막 및 투명전도성박막이 구비된 기판의 다른 실시예의 구성을 개략적으로 나타낸 3차원 모식도.1 is a real picture showing the appearance of the substrate provided with a moisture barrier film and a transparent conductive thin film according to the present invention.
Figure 2 is a schematic diagram schematically showing the configuration of an embodiment of a substrate provided with a moisture barrier film and a transparent conductive thin film according to the present invention.
Figure 3 is a schematic diagram schematically showing the configuration of another embodiment of the substrate provided with a moisture barrier film and a transparent conductive thin film according to the present invention.
Figure 4 is a schematic view showing the configuration of a film coating apparatus for forming a moisture barrier film is a step in the method for manufacturing a substrate with a moisture barrier film and a transparent conductive thin film according to the present invention.
5 is a process flowchart showing a method of manufacturing a substrate provided with a moisture barrier film and a transparent conductive thin film according to the present invention.
Figure 6 is a three-dimensional schematic diagram showing the configuration of an embodiment of a substrate provided with a moisture barrier film and a transparent conductive thin film according to the present invention.
Figure 7 is a three-dimensional schematic diagram schematically showing the configuration of another embodiment of the substrate provided with a moisture barrier film and a transparent conductive thin film according to the present invention.

이하 본 발명에 의한 투습방지막 및 투명전도성박막이 구비된 기판의 구성을 첨부된 도 1 및 도 2를 참조하여 설명한다.Hereinafter, a configuration of a substrate provided with a moisture barrier film and a transparent conductive thin film according to the present invention will be described with reference to FIGS. 1 and 2.

이에 앞서 본 명세서 및 청구범위에 사용된 용어나 단어는 통상적이고 사전적인 의미로 해석되어서는 아니되며, 발명자는 그 자신의 발명을 가장 최선의 방법으로 설명하기 위해 용어의 개념을 적절하게 정의할 수 있다는 원칙에 입각하여 본 발명의 기술적 사상에 부합하는 의미와 개념으로 해석되어야만 한다.Prior to this, terms and words used in the present specification and claims should not be construed in a conventional and dictionary sense, and the inventor may appropriately define the concept of the term in order to describe its invention in the best possible way It should be construed as meaning and concept consistent with the technical idea of the present invention.

따라서 본 명세서에 기재된 실시 예와 도면에 도시된 구성은 본 발명의 바람직한 일 실시예에 불과할 뿐이고, 본 발명의 기술적 사상을 모두 대변하는 것은 아니므로, 본 출원시점에 있어서 이들을 대체할 수 있는 다양한 균등물과 변형예들이 있을 수 있음을 이해하여야 한다.Therefore, the embodiments described in the present specification and the configurations shown in the drawings are merely preferred embodiments of the present invention, and are not intended to represent all of the technical ideas of the present invention. Therefore, various equivalents It should be understood that water and variations may be present.

도 1은 본 발명에 의한 투습방지막 및 투명전도성박막이 구비된 기판의 외관을 보인 실물 사진이고, 도 2는 본 발명에 의한 투습방지막 및 투명전도성박막이 구비된 기판의 일실시예의 구성을 개략적으로 나타낸 모식도이다.1 is a real picture showing the appearance of a substrate with a moisture barrier film and a transparent conductive thin film according to the present invention, Figure 2 is a schematic configuration of an embodiment of a substrate with a moisture barrier film and a transparent conductive thin film according to the present invention It is a schematic diagram shown.

이들 도면과 같이, 본 발명의 바람직한 실시예가 채용된 기판(100)은, 폴리머로 이루어진 투명모재(120)와, 상기 투명모재(120) 상면에 형성된 투습방지막(140) 및 상기 투습방지막(140) 상면에 형성된 투명전도성박막(150)을 포함하여 구성된다.As shown in these drawings, the substrate 100 employing a preferred embodiment of the present invention, the transparent base material 120 made of a polymer, the moisture barrier film 140 and the moisture barrier film 140 formed on the upper surface of the transparent base material 120 It comprises a transparent conductive thin film 150 formed on the upper surface.

상기 투명모재(120)는 PC, PET, PES, PEN, PAR을 포함하는 연성 디스플레이 소자용 폴리머 기판 중 어느 하나로 이루어져 플렉시블하게 구성되며, 상기 기판(100)의 맨 하측에 위치한다.The transparent base material 120 is made of any one of a polymer substrate for a flexible display device including a PC, PET, PES, PEN, PAR is flexible and is located at the bottom of the substrate (100).

그리고, 상기 투습방지막(140)은 투명모재(120) 상면에 위치하여 투명모재(120)에 대한 습기 및 공기의 통과율을 낮추기 위한 구성으로, 상기 투명모재(120) 상면에 PECVD법으로 증착된 실리콘계 유기화합물박막(142)과, 상기 유기화합물박막(142) 상면에 형성된 실리콘계 무기화합물박막(144)을 포함하여 구성된다.In addition, the moisture barrier film 140 is located on the upper surface of the transparent base material 120 to reduce the moisture and air passage rate for the transparent base material 120, the silicon-based deposited on the upper surface of the transparent base material 120 by PECVD method The organic compound thin film 142 and the silicon-based inorganic compound thin film 144 formed on the upper surface of the organic compound thin film 142 are formed.

상기 유기화합물박막(142)은 실리콘계 유기화합물 (SiCxHyOz)로 구성되며, PECVD법을 통해 상기 투명모재(120) 상면에 증착되며 그 두께는 3 내지 100㎚로 형성되어 가시광선의 투과가 70% 이상 되도록 구성된다.The organic compound thin film 142 is composed of a silicon-based organic compound (SiC x H y O z ), and is deposited on the transparent base material 120 by PECVD, the thickness is formed of 3 to 100nm to transmit visible light Is 70% or more.

상기 유기화합물박막(142)의 상면에는 실리콘계 무기화합물박막(144)이 구비된다. 상기 실리콘계 무기화합물(144)은 PECVD을 통해 형성된 것으로, SiOX, SiOxNy 중 어느 하나가 적용되며, 1000㎚ 이하의 두께를 갖도록 구성된다.An upper surface of the organic compound thin film 142 is provided with a silicon-based inorganic compound thin film 144. The silicon based inorganic compound 144 may be formed through the PECVD, and applying any one of the X SiO, SiO x N y is, is configured to have a thickness of not more than 1000㎚.

상기 투명전도성박막(150)은 기판(100)이 전도성을 가질 수 있도록 하는 구성으로, 상기 투습방지막(140) 상면에 스퍼터링법으로 증착되어 형성된다.The transparent conductive thin film 150 is configured to allow the substrate 100 to have conductivity. The transparent conductive thin film 150 is formed by being sputtered on the upper surface of the moisture barrier film 140.

그리고, 상기 투명전도성박막(150)은 ITO, IZO, AZO, GZO 중 어느 하나로 구성되며, 다수 층으로 구성될 수도 있다.The transparent conductive thin film 150 may be formed of any one of ITO, IZO, AZO, and GZO, and may be formed of a plurality of layers.

그리고, 본 발명의 실시예에 따른 투명전도성박막(150)은 100 내지 1000㎚의 두께로 형성되어 50 내지 10 Ω/□의 면저항값을 갖는다.Then, the transparent conductive thin film 150 according to the embodiment of the present invention is formed to a thickness of 100 to 1000nm and has a sheet resistance value of 50 to 10 Ω / □.

한편, 상기 유기화합물박막(142)과 무기화합물박막(144)은 도 3에 도시된 바와 같이, 다수 층이 적층되도록 구성할 수도 있다.Meanwhile, the organic compound thin film 142 and the inorganic compound thin film 144 may be configured such that a plurality of layers are stacked as shown in FIG. 3.

도 3은 본 발명에 의한 투습방지막 및 투명전도성박막이 구비된 기판의 다른 실시예의 구성을 개략적으로 나타낸 모식도이다.Figure 3 is a schematic diagram schematically showing the configuration of another embodiment of a substrate provided with a moisture barrier film and a transparent conductive thin film according to the present invention.

도 3과 같이, 상기 투명모재(120) 상면에 실리콘계 유기화합물박막(142)과 실리콘계 무기화합물박막(144)을 형성하고, 상기 실리콘계 무기화합물박막(144) 상면에 다시 실리콘계 유기화합물박막(142)과 실리콘계 무기화합물박막(144)을 순차적으로 형성하여 상기 투습방지막(140)이 여러 층으로 적층 형성되도록 구성할 수도 있음은 자명하다.As shown in FIG. 3, a silicon organic compound thin film 142 and a silicon inorganic compound thin film 144 are formed on an upper surface of the transparent base material 120, and a silicon organic compound thin film 142 is formed on an upper surface of the silicon inorganic compound thin film 144. The silicon-based inorganic compound thin film 144 may be sequentially formed so that the moisture barrier film 140 may be laminated in multiple layers.

이때 상기 다수 실리콘계 무기화합물박막(144) 중 최상측에 형성된 실리콘계 무기화합물박막(144)의 상면에는 투명전도성박막(150)이 형성됨이 바람직하다.In this case, it is preferable that the transparent conductive thin film 150 is formed on the upper surface of the silicon-based inorganic compound thin film 144 formed on the uppermost side of the plurality of silicon-based inorganic compound thin films 144.

이하 상기와 같이 구성되는 기판(100)을 제조하기 위한 막코팅장치의 구성을 살펴본다.Hereinafter, the structure of the film coating apparatus for manufacturing the substrate 100 configured as described above will be described.

도 4에는 본 발명에 의한 투습방지막 및 투명전도성박막이 구비된 기판의 제조방법에서 일 단계인 투습방지막형성단계를 위한 막코팅장치의 구성을 개략적으로 나타낸 구성도가 도시되어 있다.Figure 4 is a schematic diagram showing the configuration of a film coating apparatus for forming a moisture barrier film is a step in the method for manufacturing a substrate with a moisture barrier film and a transparent conductive thin film according to the present invention.

도면과 같이, 막코팅장치(200)는 투명모재(120)의 하면에 실리콘계 유기화합물박막(142)과 실리콘계 무기화합물박막(144)을 동일 공간 내에서 순차적으로 형성할 수 있도록 구성된다.As shown in the drawing, the film coating apparatus 200 is configured to sequentially form the silicon-based organic compound thin film 142 and the silicon-based inorganic compound thin film 144 on the lower surface of the transparent base material 120 in the same space.

즉, 상기 막코팅장치(200)는 스테인리스스틸로 제조된 진공챔버(210)에 의해 작업 공간이 형성되며, 상기 진공챔버(210) 상부에는 설치지그(220)가 구비된다. 상기 설치지그(220)는 진공챔버(210) 내부에서 회전 가능하도록 설치되며, 상기 설치지그(220)의 하면에는 투명모재(120)가 설치된다.That is, the film coating apparatus 200 is formed by a vacuum chamber 210 made of stainless steel, the installation jig 220 is provided on the vacuum chamber 210. The installation jig 220 is installed to be rotatable inside the vacuum chamber 210, and the transparent base material 120 is installed on the bottom surface of the installation jig 220.

그리고, 상기 설치지그(220)는 알에프전원수단(230)과 연결된다. 상기 알에프전원수단(230)은 상기 설치지그(220)에 알에프 전원을 공급하여 플라즈마가 발생되도록 하는 구성이다.The installation jig 220 is connected to the RF power supply unit 230. The RF power supply unit 230 is configured to supply the RF power to the installation jig 220 to generate a plasma.

상기 진공챔버(210) 좌측에는 가스공급수단(240)이 구비된다. 상기 가스공급수단(240)은 진공챔버(210) 외부에서 내부로 가스를 공급하여 PECVD 코팅 공정이 이루어지도록 하는 구성이다.Gas supply means 240 is provided on the left side of the vacuum chamber 210. The gas supply means 240 is configured to supply a gas from the outside of the vacuum chamber 210 to the inside to perform a PECVD coating process.

즉, 상기 가스공급수단(240)은 PECVD에 필요한 HMDSO (Hexamethyldisiloxane)와 혼합가스 및 반응가스를 진공챔버(210) 내부로 주입하게 된다.That is, the gas supply unit 240 injects HMDSO (Hexamethyldisiloxane), a mixed gas, and a reactant gas necessary for PECVD into the vacuum chamber 210.

상기 진공챔버(210)의 우측에는 진공발생수단(250)이 구비된다. 상기 진공발생수단(250)은 다수 펌프와 밸브를 포함하여 구성되며, 상기 진공챔버(210) 내부를 진공 분위기로 만드는 역할을 수행한다.The right side of the vacuum chamber 210 is provided with a vacuum generating means 250. The vacuum generating means 250 includes a plurality of pumps and valves, and serves to make the inside of the vacuum chamber 210 into a vacuum atmosphere.

상기 진공챔버(210) 내부 우측에는 이온빔장치(260)가 구비된다. 상기 이온빔장치(260)는 투명모재(120)에 이온빔을 조사하여 투명모재(120) 하면을 전처리하기 위한 구성이다.An ion beam device 260 is provided at the right side inside the vacuum chamber 210. The ion beam device 260 is configured to pretreat the bottom surface of the transparent base material 120 by irradiating an ion beam to the transparent base material 120.

이하 본 발명의 실시예에 적용된 막코팅장치(200)의 구성을 상세하게 설명한다.Hereinafter, the configuration of the film coating apparatus 200 applied to the embodiment of the present invention will be described in detail.

본 발명의 실시예에서 진공챔버(210)는 800㎜(F) × 900㎜(l)의 크기를 가지며, 상기 진공챔버(210) 내부를 진공 분위기로 만들기 위한 펌프는 고진공펌프 및 저진공펌프가 적용되었다.In the embodiment of the present invention, the vacuum chamber 210 has a size of 800 mm (F) × 900 mm (l), the pump for making the interior of the vacuum chamber 210 in a vacuum atmosphere is a high vacuum pump and a low vacuum pump Applied.

보다 상세하게는 상기 고진공펌프는 유확산펌프가 적용되어 10-6torr까지 진공도를 유지할 수 있으며, 저진공펌프로는 1500l/min.의 용량을 갖는 로터리 베인 펌프를 사용하였다.More specifically, the high vacuum pump is applied with a diffusion pump to maintain a vacuum degree up to 10 -6 torr, and the low vacuum pump uses a rotary vane pump having a capacity of 1500 l / min.

이러한 진공발생수단(250)에 의해 상기 진공챔버(210) 내부는 1시간 이내에 5x10-6torr의 진공도를 얻을 수 있으며 30분 이내에 투습방지막(140)을 형성할 수 있는 진공도에 도달할 수 있었다.By the vacuum generating means 250, the inside of the vacuum chamber 210 can obtain a degree of vacuum of 5x10 -6 torr within 1 hour and can reach a degree of vacuum capable of forming the moisture barrier film 140 within 30 minutes.

상기 가스공급수단(240)은 플라즈마를 발생시키기 위해 순수한 가스를 정확하게 진공챔버(210) 내에 공급할 수 있도록 하고, 펌프의 용량, 진공챔버(210) 용적에 맞추어 결정되어야 한다.The gas supply means 240 is able to accurately supply the pure gas into the vacuum chamber 210 to generate a plasma, and should be determined according to the capacity of the pump and the volume of the vacuum chamber 210.

이를 위해 본 발명의 실시예에서는 플라즈마를 발생시키는 기본가스로 아르곤(Ar)이 적용됨에 따라 100sccm의 용량을 갖는 Mass Flow Meter를 사용하였으며 산소, 질소 등의 반응가스 주입을 위해서는 50sccm의 용량을 갖는 Mass Flow Meter를 사용하였다.To this end, in the embodiment of the present invention, a mass flow meter having a capacity of 100 sccm is used as argon (Ar) is applied as a base gas generating plasma, and a mass having a capacity of 50 sccm for injection of reaction gas such as oxygen and nitrogen is used. Flow Meter was used.

그리고, 상기 설치지그(220)는 플라즈마 중합 공정을 위해 알에프전원수단(230)과 연결하였으며, 상기 투습방지막(140)의 균일성 확보를 위해 0 ~ 100rpm으로 회전할 수 있게 제작되었다. In addition, the installation jig 220 was connected to the RF power supply unit 230 for the plasma polymerization process, and was manufactured to rotate at 0 to 100 rpm to ensure uniformity of the moisture barrier film 140.

따라서, 상기와 같이 구성되는 막코팅장치(200)를 이용하면, 상기 진공챔버(210) 내에서 투명모재(120)의 전처리와 실리콘계 유기화합물박막(142) 형성 및 실리콘계 무기화합물박막(144)의 형성이 모두 실시 가능하게 된다.Therefore, using the film coating apparatus 200 configured as described above, the pretreatment of the transparent base material 120 and the silicon-based organic compound thin film 142 and silicon-based inorganic compound thin film 144 in the vacuum chamber 210 Formation becomes possible all.

한편, 상기 투명전도성박막(150)은 상기 막코팅장치(200)의 진공챔버(210) 내부에서 형성 가능하다.The transparent conductive thin film 150 may be formed in the vacuum chamber 210 of the film coating apparatus 200.

이하 상기와 같이 구성되는 막코팅장치(200)를 이용하여 투습방지막(140) 및 투명전도성박막(150)이 구비된 기판을 제조하는 방법을 첨부된 도 5를 참조하여 설명한다.Hereinafter, a method of manufacturing a substrate provided with the moisture barrier film 140 and the transparent conductive thin film 150 using the film coating apparatus 200 configured as described above will be described with reference to FIG. 5.

도 5에는 본 발명에 의한 투습방지막 및 투명전도성박막이 구비된 기판의 제조방법을 나타낸 공정 순서도가 도시되어 있다.5 is a process flowchart showing a method of manufacturing a substrate provided with a moisture barrier film and a transparent conductive thin film according to the present invention.

도면과 같이, 투습방지막(140) 및 투명전도성박막(150)이 구비된 기판을 제조하는 방법은, 크게 폴리머로 이루어진 투명모재(120)의 표면을 이온빔을 이용하여 전처리하는 전처리단계(S100)와, 전처리된 투명모재(120)의 표면에 투습방지막(140)을 형성하는 투습방지막형성단계(S200)와, 상기 투습방지막(140) 외면에 스퍼터링법을 이용하여 투명전도성박막(150)을 형성하는 투명전도성박막형성단계(S300)로 이루어진다.As shown in the drawing, a method of manufacturing a substrate provided with the moisture barrier film 140 and the transparent conductive thin film 150 includes a pretreatment step (S100) of pretreating the surface of the transparent base material 120 made of a polymer using ion beams. To form a moisture barrier film (S200) to form a moisture barrier film 140 on the surface of the transparent base material 120, and a transparent conductive thin film 150 to form a sputtering method on the outer surface of the moisture barrier film 140. The transparent conductive film forming step (S300) is made.

상기 전처리단계(S100)는 설치지그(220)의 하면에 투명모재(120)를 설치한 후 상기 저진공펌프와 고진공펌프를 이용하여 진공챔버(210) 내부의 진공도를 1x10-5torr 로 맞춘 다음 유지하게 된다.In the pretreatment step (S100), after the transparent base material 120 is installed on the lower surface of the installation jig 220, the vacuum degree inside the vacuum chamber 210 is adjusted to 1x10 -5 torr using the low vacuum pump and the high vacuum pump. Will be maintained.

이런 상태에서 상기 이온빔장치(260)를 작동시켜 상기 투명모재(120) 상에 존재하는 흡착가스 입자들과 오염물질을 제거하게 된다.In this state, the ion beam device 260 is operated to remove the adsorbed gas particles and the contaminants present on the transparent base material 120.

즉, 본 발명의 실시예에서 상기 이온빔장치(260)는 필라멘트로부터 열전자를 방출하여 플라즈마를 발생시키고 플라즈마에 존재하는 이온들을 가속시켜 방출하는 엔드홀(End-Hall) 방식이 적용되었다.That is, in the embodiment of the present invention, the ion beam device 260 generates a plasma by emitting hot electrons from the filament, and an end-hole method for accelerating and emitting ions present in the plasma is applied.

보다 상세하게는 상기 진공챔버(210) 내부에 혼합가스(Ar)을 주입하여 5x10-5torr 내지 5x10-4torr의 진공도를 유지하였고, 필라멘트의 파워는 약 400W(20A ×20V), 이온빔장치(260)의 파워는 180W (2A × 90V)로 설정하여 3분 내지 5분 실시하였다.More particularly, the vacuum chamber 210 by injecting a mixed gas (Ar) therein 5x10 - 5x10 5torr was maintained to a degree of vacuum of -4 torr, the power of the filament is about 400W (20A × 20V), the ion beam device (260 ) Was set to 180 W (2A x 90V) and carried out for 3 to 5 minutes.

상기와 같은 과정에 따라 전처리단계(S100)가 완료되면, 상기 투습방지막형성단계(S200)가 실시된다.When the pretreatment step S100 is completed according to the above process, the moisture barrier film forming step S200 is performed.

상기 투습방지막형성단계(S200)는 실리콘계 유기화합물박막(142)을 형성하는 유기화합물박막형성과정(S220)과, 상기 유기화합물박막(142) 상면에 실리콘계 무기화합물박막(144)을 형성하는 무기화합물박막형성과정(S240)이 순차적으로 실시되어 투습방지막(140)이 형성되는 과정이다.The moisture barrier film forming step (S200) is an organic compound thin film formation process (S220) for forming a silicon-based organic compound thin film 142, and an inorganic compound for forming a silicon-based inorganic compound thin film 144 on the organic compound thin film 142. The thin film forming process (S240) is performed sequentially to form a moisture barrier film 140.

상기 유기화합물박막형성과정(S220)에서 형성되는 실리콘계 유기화합물박막(142)은 PECVD법에 의해 SiCxHyOz물질을 3㎚ 내지 100㎚의 두께로 증착시키는 과정이다.The silicon-based organic compound thin film 142 formed in the organic compound thin film forming process S220 is a process of depositing a SiC x H y O z material to a thickness of 3 nm to 100 nm by PECVD.

그리고, 상기 실리콘계 무기화합물박막형성과정(S240)은 상기 유기화합물박막(142) 상면에 PECVD법을 이용하여 투습도를 조절할 수 있는 실리콘계 무기화합물을 증착시켜 무기화합물박막(144)을 형성하는 과정이다.The silicon-based inorganic compound thin film forming process (S240) is a process of forming an inorganic compound thin film 144 by depositing a silicon-based inorganic compound that can control the moisture permeability using PECVD on the upper surface of the organic compound thin film 142.

이를 위해 상기 실리콘계 유기화합물박막형성과정(S220)에서는 진공챔버(210) 내부에 HMDSO 기체를 주입하였으며, 상기 진공챔버(210) 내부의 바람직한 진공도를 맞추기 위해 아르곤(Ar), 캐리어 가스 및 반응가스(산소(O2))를 주입하였다.To this end, in the silicon-based organic compound thin film forming process (S220), HMDSO gas is injected into the vacuum chamber 210, and argon (Ar), a carrier gas, and a reaction gas (In order to meet a desired degree of vacuum in the vacuum chamber 210). Oxygen (O 2 )) was injected.

상기한 조건에서 상기 알에프전원수단(230)에 전원을 인가하여 0.3w/㎠이하의 프라즈마 파워를 발생시켜 실리콘계 유기화합물박막(144)이 증착되도록 하였다.Under the above conditions, power was applied to the RF power supply unit 230 to generate plasma power of 0.3 w / cm 2 or less so that the silicon-based organic compound thin film 144 was deposited.

실리콘계 무기화합물박막형성과정(S240)에서는 진공챔버(210) 내부에 HMDSO 기체를 주입하였으며, 상기 진공챔버(210) 내부의 바람직한 진공도를 맞추기 위해 아르곤(Ar), 캐리어 가스 및 반응가스(산소(O2), 질소(N2), 또는 산소 질소 혼합 가스)를 주입하였다.In the process of forming a silicon-based inorganic compound thin film (S240), HMDSO gas was injected into the vacuum chamber 210, and argon (Ar), a carrier gas, and a reaction gas (oxygen (O) were used to meet a desired degree of vacuum in the vacuum chamber 210. 2 ), nitrogen (N 2 ), or oxygen nitrogen mixed gas) was injected.

상기한 조건에서 상기 알에프전원수단(230)에 전원을 인가하여 0.7w/㎠이상의 플라즈마 파워를 인가시켜 상기 실리콘 유기화합물박막(142) 상면에 실리콘계 무기화합물박막(144)이 증착되도록 하였다.Under the above conditions, the RF power supply unit 230 was supplied with power to apply plasma power of 0.7 w / cm 2 or more so that the silicon-based inorganic compound thin film 144 was deposited on the upper surface of the silicon organic compound thin film 142.

상기 실리콘계 무기화합물박막(144)은 Tri-methyl과 결합하고 있는 실리콘(Si) 원자가 플라즈마 에너지에 의해 파괴되어 SixOy 와 같은 단량체(Monomer)들이 형성되고, 이렇게 분해된 단량체들이 플라즈마 에너지에 의해 다시 반응기체 (산소 또는 질소)들과 중합되는 중합 반응이 표면에서 발생하여 SiOX, SiOxNy 중 어느 하나로 이루어진 실리콘계 무기화합물박막(144)이 형성되는 것이다.In the silicon-based inorganic compound thin film 144, silicon (Si) atoms bonded to tri-methyl are destroyed by plasma energy to form monomers such as Si x O y, and the decomposed monomers are formed by plasma energy. Again, a polymerization reaction occurs that polymerizes with the reactants (oxygen or nitrogen) on the surface, causing SiO X , SiO x N y Silicon-based inorganic compound thin film 144 is formed of any one of.

그리고, 상기 실리콘계 무기화합물박막(144)은 RF 전력이 클수록, 진공챔버(210) 내에 HMDSO 기체량이 많을수록 증착속도가 증가되며, 상기 투습방지막형성단계(S200)는 전술한 바와 같이 다수회 반복 실시가 가능하다.In addition, as the silicon-based inorganic compound thin film 144 has a larger RF power and a larger amount of HMDSO gas in the vacuum chamber 210, the deposition rate increases, and the moisture barrier film forming step (S200) may be repeatedly performed a plurality of times as described above. It is possible.

이하 본 발명의 실시예를 첨부된 도 6 및 도 7을 참조하여 설명한다.Hereinafter, embodiments of the present invention will be described with reference to FIGS. 6 and 7.

도 6에는 본 발명에 의한 투습방지막 및 투명전도성박막이 구비된 기판의 일실시예의 구성을 개략적으로 나타낸 3차원 모식도가 도시되어 있고, 도 7에는 본 발명에 의한 투습방지막 및 투명전도성박막이 구비된 기판의 다른 실시예의 구성을 개략적으로 나타낸 3차원 모식도가 도시되어 있다.Figure 6 is a schematic three-dimensional schematic diagram showing the configuration of an embodiment of a substrate with a moisture barrier film and a transparent conductive thin film according to the present invention, Figure 7 is provided with a moisture barrier film and a transparent conductive thin film according to the present invention A three-dimensional schematic diagram is shown schematically showing the construction of another embodiment of the substrate.

[실시예1][Example 1]

- 투명모재 : 재질 PET, 두께 188㎛, 투과도 92% -Transparent substrate: Material PET, thickness 188㎛, transmittance 92%

- 초기 진공도 : 3 × 10-5torr Initial vacuum degree: 3 × 10 -5 torr

- 이온빔 전처리-Ion beam pretreatment

* 전처리단계에서 작업 진공도 : 2 × 10-4torr* Working vacuum degree in pretreatment stage: 2 × 10 -4 torr

* 전처리용 이온빔 플라즈마 Power : 100V ×1.5A  * Pretreatment ion beam plasma power: 100V × 1.5A

- 실리콘계 유기화합물 코팅 -Silicone organic compound coating

* 작업 가스 : HMDSO(8%), 알곤 (75%), 산소(17%)  * Working gas: HMDSO (8%), argon (75%), oxygen (17%)

* 작업 진공도 : 1.5 × 10-1torr* Working vacuum degree: 1.5 × 10 -1 torr

* RF 전력 : 30w (시편 지그 넓이- 100㎠)  * RF power: 30w (sample jig width-100㎠)

* 실리콘계 유기화합물 코팅 시간: 2 min  * Silicone organic compound coating time: 2 min

* 실리콘계 유기화합물 코팅 두께 : 50㎚  * Silicon-based organic compound coating thickness: 50nm

- 코팅 필름의 특성 : 코팅 물질 SiCxHyOz, 투과도 89%-Characteristics of the coating film: coating material SiC x H y O z , transmittance 89%

- 실리콘계 무기화합물 코팅 -Silicone inorganic compound coating

* 작업 가스 : HMDSO(8%), 알곤 (75%), 산소(17%)  * Working gas: HMDSO (8%), argon (75%), oxygen (17%)

* 작업 진공도 : 1.5 × 10-1torr* Working vacuum degree: 1.5 × 10 -1 torr

* RF 전력 : 200w (시편 지그 넓이- 100㎠)  * RF power: 200w (sample jig width-100㎠)

* 실리콘계 유기화합물 코팅 시간: 20min  * Silicone organic compound coating time: 20min

* 실리콘계 유기화합물 코팅 두께 : 200nm  * Silicon organic compound coating thickness: 200nm

- 코팅 필름의 특성 : 코팅 물질 SiOx, 투과도 87%-Characteristics of the coating film: coating material SiO x , transmittance 87%

- 투명전도성박막(150) 코팅-Transparent conductive thin film (150) coating

* 스퍼터링 타겟 : ITO  * Sputtering Target: ITO

* 작업 가스 : Ar(99.5%), 산소(0.5%)  * Working gas: Ar (99.5%), oxygen (0.5%)

* 작업 진공도 : 1.5x10-3torr* Working vacuum degree: 1.5x10 -3 torr

* RF 전력 : 400w (타겟 넓이- 400㎠)  * RF power: 400w (target width- 400㎠)

* 코팅 시간: 20min  * Coating time: 20min

* 코팅 두께 : 150㎚  Coating Thickness: 150nm

* 면저항 : 17OΩ/□  * Sheet resistance: 17OΩ / □

- 코팅 필름의 특성 : 코팅 물질 SiCxHyOz/SiOx/ITO, 투과도 85%, 면저항 17OΩ/□-Characteristics of coating film: Coating material SiC x H y O z / SiO x / ITO, transmittance 85%, sheet resistance 17OΩ / □

아울러 본 발명에서는 Polymer 모재에 상기 실리콘계 유기화합물박막(142)과 무기화합물박막(144)을 순차적으로 2회 이상 반복 코팅함으로서 더욱 우수한 투습도 투산소도 특성을 나타낼 수 있으며 그 위에 투명전도성박막(150)을 형성시키는 구체적인 작업 조건은 [실시예 2]에 제시하였다.
In addition, in the present invention, by repeatedly coating the silicon-based organic compound thin film 142 and the inorganic compound thin film 144 on the polymer base material two or more times, it is possible to exhibit more excellent moisture permeability and oxygen permeability characteristics, and the transparent conductive thin film 150 thereon. Specific working conditions for forming the compound are shown in [Example 2].

[실시예 2][Example 2]

- 투명모재 : 재질 PET, 두께 188㎛, 투과도 92% -Transparent substrate: Material PET, thickness 188㎛, transmittance 92%

- 초기 진공도 : 3 × 10-5torr Initial vacuum degree: 3 × 10 -5 torr

- 이온빔 전처리-Ion beam pretreatment

* 전처리단계에서 작업 진공도 : 2 × 10-4torr* Working vacuum degree in pretreatment stage: 2 × 10 -4 torr

* 전처리용 이온빔 플라즈마 Power : 100V ×1.5A  * Pretreatment ion beam plasma power: 100V × 1.5A

- 실리콘계 유기화합물박막 코팅 (1회) -Silicone organic compound thin film coating (1 time)

* 작업 가스 : HMDSO(8%), 알곤 (75%), 산소(17%)  * Working gas: HMDSO (8%), argon (75%), oxygen (17%)

* 작업 진공도 : 1.5 × 10-1torr* Working vacuum degree: 1.5 × 10 -1 torr

* RF 전력 : 30w (시편 지그 넓이- 100㎠)  * RF power: 30w (sample jig width-100㎠)

* 실리콘계 유기화합물 코팅 시간: 2min  * Silicon organic compound coating time: 2min

* 실리콘계 유기화합물 코팅 두께 : 50㎚  * Silicon-based organic compound coating thickness: 50nm

- 코팅 필름의 특성 : 코팅 물질 SiCxHyOz, 투과도 89%-Characteristics of the coating film: coating material SiC x H y O z , transmittance 89%

- 실리콘계 무기화합물 코팅 (1회) -Silicone inorganic compound coating (1 time)

* 작업 가스 : HMDSO(8%), 알곤 (75%), 산소(17%)  * Working gas: HMDSO (8%), argon (75%), oxygen (17%)

* 작업 진공도 : 1.5 × 10-1torr* Working vacuum degree: 1.5 × 10 -1 torr

* RF 전력 : 200w (시편 지그 넓이- 100㎠)  * RF power: 200w (sample jig width-100㎠)

* 실리콘계 유기화합물 코팅 시간: 20min  * Silicone organic compound coating time: 20min

* 실리콘계 유기화합물 코팅 두께 : 200nm  * Silicon organic compound coating thickness: 200nm

- 실리콘계 유기화합물 코팅 (2회)-Silicone organic compound coating (2 times)

* 실리콘계 유기화합물 코팅 (1회)와 동일 조건  * Same condition as silicone organic compound coating (1 time)

- 실리콘계 무기화합물 코팅 (2회)-Silicone inorganic compound coating (2 times)

* 실리콘계 무기화합물 코팅 (1회)와 동일 조건  * Same condition as silicone inorganic compound coating (1 time)

- 실리콘계 유기화합물 코팅 (3회)-Silicone organic compound coating (3 times)

* 실리콘계 유기화합물 코팅 (1회)와 동일 조건  * Same condition as silicone organic compound coating (1 time)

- 실리콘계 무기화합물 코팅 (3회)-Silicone inorganic compound coating (3 times)

* 실리콘계 무기화합물 코팅 (1회)와 동일 조건  * Same condition as silicone inorganic compound coating (1 time)

- 코팅 필름의 특성 : 코팅 물질 SiCxHyOz / SiOx / SiCxHyOz / SiOx / SiCxHyOz / SiOx, 투과도 83%, 투습도 1.0 x 10-3g/㎡/day 이하-Characteristics of the coating film: coating material SiC x H y O z Of SiO x / SiC x H y O z / SiO x / SiC x H y O z / SiO x , Permeability: 83%, Water vapor transmission rate 1.0 x 10 -3 g / ㎡ / day or less

- 투명전도성박막 코팅-Transparent conductive thin film coating

* 스퍼터링 타겟 : ITO  * Sputtering Target: ITO

* 작업 가스 : Ar(99.5%), 산소(0.5%)  * Working gas: Ar (99.5%), oxygen (0.5%)

* 작업 진공도 : 1.5x10-3torr* Working vacuum degree: 1.5x10 -3 torr

* RF 전력 : 400w (타겟 넓이- 400)  * RF power: 400w (target width-400)

* 코팅 시간: 20min  * Coating time: 20min

* 코팅 두께 : 150nm  * Coating Thickness: 150nm

* 면저항 : 17OΩ/□  * Sheet resistance: 17OΩ / □

- 코팅 필름의 특성 : 코팅 물질 SiCxHyOz / SiOx / SiCxHyOz / SiOx / SiCxHyOz/ SiOx, 투습도 1.0 x 10-3g/m2/day 이하, 투과도 83%, 면저항 17OΩ/□-Characteristics of the coating film: coating material SiC x H y O z Of SiO x / SiC x H y O z / SiO x / SiC x H y O z / SiO x , moisture permeability 1.0 x 10 -3 g / m 2 / day or less, transmittance 83%, sheet resistance 17OΩ / □

[실시 예1]에 따라 제조된 기판(100)은 40% 상대 습도에서 약 3x10-3g/m2/day의 투습도를 나타냈으며 [실시예 2]의 경우에는 1x10-3g/m2/day 이하의 투습도를 나타내었다.The substrate 100 prepared according to [Example 1] exhibited a moisture permeability of about 3 × 10 −3 g / m 2 / day at 40% relative humidity, and in the case of [Example 2], 1 × 10 −3 g / m 2 / A water vapor transmission rate of less than one day was shown.

따라서, 상기 실리콘계 유기화합물박막(142)과 실리콘계 무기화합물박막(144)을 순차적으로 다수회 실시하여 투습방지막(140)을 다수 층으로 적층 형성하게 될 경우 투습도는 보다 낮아지게 됨은 분명하다. Therefore, when the silicon-based organic compound thin film 142 and the silicon-based inorganic compound thin film 144 are sequentially performed a plurality of times, it is clear that the moisture permeability is lowered when the moisture barrier layer 140 is laminated in multiple layers.

이러한 본 발명의 범위는 상기에서 예시한 실시예에 한정되지 않고, 상기와 같은 기술범위 안에서 당업계의 통상의 기술자에게 있어서는 본 발명을 기초로 하는 다른 많은 변형이 가능할 것이다.The scope of the present invention is not limited to the above-described embodiments, and many other modifications based on the present invention will be possible to those skilled in the art within the scope of the present invention.

100. 기판 120. 투명모재
140. 투습방지막 142. 유기화합물박막
144. 무기화합물박막 150. 투명전도성박막
200. 막코팅장치 210. 진공챔버
220. 설치지그 230. 알에프전원수단
240. 가스공급수단 250. 진공발생수단
260. 이온빔장치 272. 산화물 증발소스
S100. 전처리단계 S200. 투습방지막형성단계
S220. 유기화합물박막형성과정 S240. 무기화합물박막형성과정
S300. 투명전도성박막형성단계100. Substrate 120. Transparent substrate
140. Moisture barrier 142. Organic compound thin film
144. Inorganic compound thin film 150. Transparent conductive thin film
200. Membrane coating device 210. Vacuum chamber
220. Mounting jig 230. RF power supply means
240. Gas supply means 250. Vacuum generating means
260. Ion beam apparatus 272. Oxide evaporation source
S100. Pretreatment step S200. Moisture-proof film forming step
S220. Organic Compound Thin Film Formation Process S240. Inorganic Compound Thin Film Forming Process
S300. Transparent conductive thin film forming step

Claims (14)

삭제delete 폴리머로 이루어지며 이온빔에 의해 표면이 전처리된 투명모재와;
상기 투명모재 일측에 SiOX, SiOxNy 중 어느 하나의 화학적 조성을 갖도록 플라즈마화학증기증착법(PECVD:Plasma Enhanced Chemical Vapor Deposition)으로 형성된 실리콘계 유기화합물박막과, 상기 실리콘계 유기화합물박막 일측에 SiCxHyOz의 화학적 조성을 갖도록 PECVD법을 통해 1000㎚ 이하의 두께로 형성되어 실리콘계 유기화합물박막 입자의 경계면을 채우는 실리콘계 무기화합물박막을 포함하고, 상기 유기화합물박막과 무기화합물박막은 동일한 진공챔버 내부에서 순차적으로 교번하여 1층 이상 형성되며, 1 × 10-3g/㎡/day 이하의 투습도를 갖는 투습방지막과;
스퍼터링법을 이용하여 상기 투습방지막 외측에 ITO, IZO, AZO, GZO 중 어느 하나로 형성된 투명전도성박막을 포함하여 구성됨을 특징으로 하는 투습방지막 및 투명전도성박막이 구비된 기판.A transparent base material composed of a polymer and whose surface is pretreated by an ion beam;
Silicon-based organic compound thin film formed by plasma enhanced chemical vapor deposition (PECVD) so as to have a chemical composition of any one of SiO X , SiO x N y on one side of the transparent base material, and SiC x H on one side of the silicon-based organic compound thin film It includes a silicon-based inorganic compound thin film formed to a thickness of 1000nm or less through PECVD to fill the interface of the silicon-based organic compound thin film particles to have a chemical composition of y O z , the organic compound thin film and the inorganic compound thin film in the same vacuum chamber It is formed by alternating one or more layers sequentially, and a moisture barrier film having a water vapor transmission rate of 1 × 10 -3 g / ㎡ / day or less;
A substrate with a moisture barrier film and a transparent conductive film, comprising a transparent conductive thin film formed of any one of ITO, IZO, AZO, and GZO on the outside of the moisture barrier film by sputtering. 제 2 항에 있어서, 상기 투명전도성박막은 100 내지 1000㎚의 두께로 형성됨을 특징으로 하는 투습방지막 및 투명전도성박막이 구비된 기판.The substrate according to claim 2, wherein the transparent conductive thin film is formed to a thickness of 100 to 1000 nm. 제 3 항에 있어서, 상기 투명전도성박막은 50 내지 10 Ω/□의 면저항값을 갖는 것을 특징으로 하는 투습방지막 및 투명전도성 박막이 구비된 기판.The substrate with a moisture barrier film and a transparent conductive thin film according to claim 3, wherein the transparent conductive thin film has a sheet resistance value of 50 to 10 kW / square. 삭제delete 삭제delete 제 4 항에 있어서, 상기 투명모재는 PC, PET, PES, PEN, PAR, 투명 폴리머 기판 중 어느 하나를 포함하는 것을 특징으로 하는 투습방지막 및 투명전도성박막이 구비된 기판.The substrate with a moisture barrier film and a transparent conductive thin film according to claim 4, wherein the transparent base material comprises any one of a PC, PET, PES, PEN, PAR, and a transparent polymer substrate. 삭제delete 삭제delete 삭제delete 삭제delete 폴리머로 이루어진 투명모재의 표면을 이온빔을 이용하여 전처리하는 전처리단계와;
상기 투명모재 일측에 SiOX, SiOxNy 중 어느 하나의 화학적 조성을 갖도록 플라즈마화학증기증착법(PECVD:Plasma Enhanced Chemical Vapor Deposition)으로 형성된 실리콘계 유기화합물박막을 형성하는 유기화합물박막형성과정과, 상기 유기화합물박막 외면에 동일한 PECVD법으로 SiCxHyOz의 화학적 조성을 갖는 실리콘계 무기화합물박막을 1000㎚ 이하의 두께로 형성하여 유기화합물박막 입자의 경계면을 채우는 무기화합물박막형성과정을 순차적으로 1회 이상 교번 실시하여 1 × 10-3g/㎡/day 이하의 투습도를 갖는 투습방지막을 형성하는 투습방지막형성단계와;
상기 투습방지막 외면에 스퍼터링법을 이용하여 ITO, IZO, AZO, GZO 중 어느 하나로 형성된 투명전도성박막을 형성하는 투명전도성박막형성단계;로 이루어지는 것을 특징으로 하는 투습방지막 및 투명전도성박막이 구비된 기판의 제조방법.A pretreatment step of pretreating the surface of the transparent base material made of a polymer by using an ion beam;
On one side of the transparent base material SiO X, SiO x N y in any one of chemical composition so as to have a plasma chemical vapor deposition (PECVD: Plasma Enhanced Chemical Vapor Deposition ) the formed silicon-based organic compound thin film of organic compound thin film forming process and the organic forming a At least one inorganic compound thin film formation process that fills the interface of organic compound thin film particles by forming a silicon-based inorganic compound thin film having a chemical composition of SiC x H y O z to a thickness of 1000 nm or less by the same PECVD method on the outer surface of the compound thin film Forming a moisture barrier film having alternating moisture permeability of 1 × 10 −3 g / m 2 / day or less;
A transparent conductive thin film forming step of forming a transparent conductive thin film formed of any one of ITO, IZO, AZO, GZO by using a sputtering method on the outer surface of the moisture barrier film; and a substrate having a moisture barrier film and a transparent conductive film Manufacturing method. 제 12 항에 있어서, 상기 전처리단계, 투습방지막형성단계, 투명전도성박막형성단계는 동일한 진공챔버 내부에서 연속적으로 실시됨을 특징으로 하는 투습방지막 및 투명전도성박막이 구비된 기판의 제조방법.The method of claim 12, wherein the pretreatment step, the moisture barrier film forming step, and the transparent conductive film forming step are continuously performed in the same vacuum chamber. 제 13 항에 있어서, 상기 투명전도성박막형성단계에서 350V 이하의 저전압 플라즈마가 적용됨을 특징으로 하는 투습방지막 및 투명전도성박막이 구비된 기판의 제조방법.


The method of claim 13, wherein a low voltage plasma of 350 V or less is applied in the transparent conductive thin film forming step.


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