KR101371939B1 - 질화규소의 연마를 위한 조성물 및 방법 - Google Patents

질화규소의 연마를 위한 조성물 및 방법 Download PDF

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KR101371939B1
KR101371939B1 KR1020087024838A KR20087024838A KR101371939B1 KR 101371939 B1 KR101371939 B1 KR 101371939B1 KR 1020087024838 A KR1020087024838 A KR 1020087024838A KR 20087024838 A KR20087024838 A KR 20087024838A KR 101371939 B1 KR101371939 B1 KR 101371939B1
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Prior art keywords
polishing
polishing composition
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acid
composition
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Korean (ko)
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KR20080106575A (ko
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잔 첸
로버트 바카시
필립 카터
제프리 디사드
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캐보트 마이크로일렉트로닉스 코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020087024838A 2006-03-13 2007-03-06 질화규소의 연마를 위한 조성물 및 방법 Active KR101371939B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/374,238 US20070209287A1 (en) 2006-03-13 2006-03-13 Composition and method to polish silicon nitride
US11/374,238 2006-03-13
PCT/US2007/005594 WO2007108926A2 (en) 2006-03-13 2007-03-06 Composition and method to polish silicon nitride

Publications (2)

Publication Number Publication Date
KR20080106575A KR20080106575A (ko) 2008-12-08
KR101371939B1 true KR101371939B1 (ko) 2014-03-07

Family

ID=38436739

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087024838A Active KR101371939B1 (ko) 2006-03-13 2007-03-06 질화규소의 연마를 위한 조성물 및 방법

Country Status (10)

Country Link
US (1) US20070209287A1 (https=)
EP (1) EP1994107A2 (https=)
JP (1) JP5524607B2 (https=)
KR (1) KR101371939B1 (https=)
CN (2) CN101389722B (https=)
IL (1) IL192527A (https=)
MY (1) MY153685A (https=)
SG (1) SG170108A1 (https=)
TW (1) TWI363797B (https=)
WO (1) WO2007108926A2 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8759216B2 (en) * 2006-06-07 2014-06-24 Cabot Microelectronics Corporation Compositions and methods for polishing silicon nitride materials
KR101564676B1 (ko) * 2008-02-01 2015-11-02 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 이를 이용한 연마 방법
JP5441362B2 (ja) * 2008-05-30 2014-03-12 富士フイルム株式会社 研磨液及び研磨方法
CN101747841A (zh) * 2008-12-05 2010-06-23 安集微电子（上海）有限公司 一种化学机械抛光液
SG10201401549SA (en) 2009-06-22 2014-06-27 Cabot Microelectronics Corp CMP Compositions And Methods For Suppressing Polysilicon Removal Rates
KR101091030B1 (ko) * 2010-04-08 2011-12-09 이화다이아몬드공업 주식회사 감소된 마찰력을 갖는 패드 컨디셔너 제조방법
US20140197356A1 (en) * 2011-12-21 2014-07-17 Cabot Microelectronics Corporation Cmp compositions and methods for suppressing polysilicon removal rates
US8999193B2 (en) 2012-05-10 2015-04-07 Air Products And Chemicals, Inc. Chemical mechanical polishing composition having chemical additives and methods for using same
KR101612520B1 (ko) 2012-05-10 2016-04-14 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 화학 첨가제를 지닌 화학적 기계적 폴리싱 조성물 및 이를 사용하는 방법
US9633863B2 (en) 2012-07-11 2017-04-25 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
SG11201607461PA (en) 2014-03-28 2016-10-28 Fujimi Inc Polishing composition and polishing method using the same
US9583359B2 (en) 2014-04-04 2017-02-28 Fujifilm Planar Solutions, LLC Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films
CN105802511A (zh) * 2014-12-29 2016-07-27 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
CN108117838B (zh) * 2016-11-29 2021-09-17 安集微电子科技（上海）股份有限公司 一种氮化硅化学机械抛光液
CN113632205B (zh) * 2019-06-06 2024-12-20 株式会社力森诺科 研磨液及研磨方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003072671A1 (en) * 2002-02-22 2003-09-04 Saint-Gobain Ceramics & Plastics, Inc. Cmp formulations for the use on nickel-phosphorus alloys
WO2004069947A1 (en) * 2003-02-03 2004-08-19 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
JP2005328043A (ja) * 2004-04-21 2005-11-24 Rohm & Haas Electronic Materials Cmp Holdings Inc バリヤ研磨溶液
KR20060013422A (ko) * 2003-05-28 2006-02-09 히다치 가세고교 가부시끼가이샤 연마제 및 연마 방법

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) * 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US6546939B1 (en) * 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
US5196353A (en) * 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) * 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) * 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) * 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5964643A (en) * 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) * 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) * 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US5773364A (en) * 1996-10-21 1998-06-30 Motorola, Inc. Method for using ammonium salt slurries for chemical mechanical polishing (CMP)
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US6635562B2 (en) * 1998-09-15 2003-10-21 Micron Technology, Inc. Methods and solutions for cleaning polished aluminum-containing layers
JP4095731B2 (ja) * 1998-11-09 2008-06-04 株式会社ルネサステクノロジ 半導体装置の製造方法及び半導体装置
JP4053165B2 (ja) * 1998-12-01 2008-02-27 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US6228727B1 (en) * 1999-09-27 2001-05-08 Chartered Semiconductor Manufacturing, Ltd. Method to form shallow trench isolations with rounded corners and reduced trench oxide recess
US20040055993A1 (en) * 1999-10-12 2004-03-25 Moudgil Brij M. Materials and methods for control of stability and rheological behavior of particulate suspensions
US6524168B2 (en) * 2000-06-15 2003-02-25 Rodel Holdings, Inc Composition and method for polishing semiconductors
US6468913B1 (en) * 2000-07-08 2002-10-22 Arch Specialty Chemicals, Inc. Ready-to-use stable chemical-mechanical polishing slurries
US6872329B2 (en) * 2000-07-28 2005-03-29 Applied Materials, Inc. Chemical mechanical polishing composition and process
JP2002075927A (ja) * 2000-08-24 2002-03-15 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP3768401B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
EP1369906B1 (en) * 2001-02-20 2012-06-27 Hitachi Chemical Company, Ltd. Polishing compound and method for polishing substrate
US6521523B2 (en) * 2001-06-15 2003-02-18 Silicon Integrated Systems Corp. Method for forming selective protection layers on copper interconnects
MY144587A (en) * 2001-06-21 2011-10-14 Kao Corp Polishing composition
US6527622B1 (en) * 2002-01-22 2003-03-04 Cabot Microelectronics Corporation CMP method for noble metals
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US20030176151A1 (en) * 2002-02-12 2003-09-18 Applied Materials, Inc. STI polish enhancement using fixed abrasives with amino acid additives
KR100442873B1 (ko) * 2002-02-28 2004-08-02 삼성전자주식회사 화학적 기계적 폴리싱 슬러리 및 이를 사용한 화학적기계적 폴리싱 방법
US6604987B1 (en) * 2002-06-06 2003-08-12 Cabot Microelectronics Corporation CMP compositions containing silver salts
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US20040123528A1 (en) * 2002-12-30 2004-07-01 Jung Jong Goo CMP slurry for semiconductor device, and method for manufacturing semiconductor device using the same
US6918820B2 (en) * 2003-04-11 2005-07-19 Eastman Kodak Company Polishing compositions comprising polymeric cores having inorganic surface particles and method of use
US6964600B2 (en) * 2003-11-21 2005-11-15 Praxair Technology, Inc. High selectivity colloidal silica slurry
US6971945B2 (en) * 2004-02-23 2005-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-step polishing solution for chemical mechanical planarization

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003072671A1 (en) * 2002-02-22 2003-09-04 Saint-Gobain Ceramics & Plastics, Inc. Cmp formulations for the use on nickel-phosphorus alloys
WO2004069947A1 (en) * 2003-02-03 2004-08-19 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
KR20060013422A (ko) * 2003-05-28 2006-02-09 히다치 가세고교 가부시끼가이샤 연마제 및 연마 방법
JP2005328043A (ja) * 2004-04-21 2005-11-24 Rohm & Haas Electronic Materials Cmp Holdings Inc バリヤ研磨溶液

Also Published As

Publication number Publication date
SG170108A1 (en) 2011-04-29
IL192527A0 (en) 2009-02-11
EP1994107A2 (en) 2008-11-26
CN101389722A (zh) 2009-03-18
CN101389722B (zh) 2012-09-05
WO2007108926A3 (en) 2008-03-20
US20070209287A1 (en) 2007-09-13
TWI363797B (en) 2012-05-11
CN102604541B (zh) 2015-05-20
JP5524607B2 (ja) 2014-06-18
MY153685A (en) 2015-03-13
WO2007108926A2 (en) 2007-09-27
JP2009530811A (ja) 2009-08-27
TW200740970A (en) 2007-11-01
IL192527A (en) 2013-08-29
CN102604541A (zh) 2012-07-25
KR20080106575A (ko) 2008-12-08

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