KR101361570B1 - 저항 감지 엘리먼트 블록 소거 및 단방향 기록을 갖는 비휘발성 메모리 어레이 - Google Patents

저항 감지 엘리먼트 블록 소거 및 단방향 기록을 갖는 비휘발성 메모리 어레이 Download PDF

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KR101361570B1
KR101361570B1 KR1020127003432A KR20127003432A KR101361570B1 KR 101361570 B1 KR101361570 B1 KR 101361570B1 KR 1020127003432 A KR1020127003432 A KR 1020127003432A KR 20127003432 A KR20127003432 A KR 20127003432A KR 101361570 B1 KR101361570 B1 KR 101361570B1
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South Korea
Prior art keywords
memory cells
control line
fixed reference
resistance state
reference voltage
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KR1020127003432A
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English (en)
Korean (ko)
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KR20120046247A (ko
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다니엘 리드
영 루
앤드류 카터
하이 리
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시게이트 테크놀로지 엘엘씨
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Priority claimed from US12/501,077 external-priority patent/US7885097B2/en
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0097—Erasing, e.g. resetting, circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0071—Write using write potential applied to access device gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0073—Write using bi-directional cell biasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0078—Write using current through the cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0088—Write with the simultaneous writing of a plurality of cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
KR1020127003432A 2009-07-10 2010-07-07 저항 감지 엘리먼트 블록 소거 및 단방향 기록을 갖는 비휘발성 메모리 어레이 KR101361570B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12/501,077 US7885097B2 (en) 2008-10-10 2009-07-10 Non-volatile memory array with resistive sense element block erase and uni-directional write
US12/501,077 2009-07-10
US10440209P 2009-10-10 2009-10-10
US61/104,402 2009-10-10
PCT/US2010/041134 WO2011005809A1 (en) 2009-07-10 2010-07-07 Non-volatile memory array with resistive sense element block erase and uni-directional write

Publications (2)

Publication Number Publication Date
KR20120046247A KR20120046247A (ko) 2012-05-09
KR101361570B1 true KR101361570B1 (ko) 2014-02-12

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KR1020127003432A KR101361570B1 (ko) 2009-07-10 2010-07-07 저항 감지 엘리먼트 블록 소거 및 단방향 기록을 갖는 비휘발성 메모리 어레이

Country Status (3)

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KR (1) KR101361570B1 (zh)
CN (1) CN102473448B (zh)
WO (1) WO2011005809A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101312366B1 (ko) * 2011-04-06 2013-09-26 에스케이하이닉스 주식회사 자기 메모리 장치를 위한 라이트 드라이버 회로 및 자기 메모리 장치
US8995180B2 (en) * 2012-11-29 2015-03-31 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetoresistive random access memory (MRAM) differential bit cell and method of use
US9899083B1 (en) * 2016-11-01 2018-02-20 Arm Ltd. Method, system and device for non-volatile memory device operation with low power high speed and high density
CN110021323A (zh) * 2018-01-10 2019-07-16 中电海康集团有限公司 一次写入多次读取的数据存储器件及系统

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040114438A1 (en) * 2002-12-05 2004-06-17 Sharp Kabushiki Kaisha Semiconductor memory device and erase method for memory array
KR20050027151A (ko) * 2003-09-12 2005-03-17 샤프 가부시키가이샤 비휘발성 반도체 기억 장치
KR20050084288A (ko) * 2002-12-13 2005-08-26 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 스핀 주입 디바이스 및 이를 사용한 자기 장치, 그리고이들에 사용되는 자성 박막
WO2007100626A2 (en) 2006-02-24 2007-09-07 Grandis, Inc. Current driven memory cells having enhanced current and enhanced current symmetry

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7272034B1 (en) * 2005-08-31 2007-09-18 Grandis, Inc. Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
JP4460552B2 (ja) * 2006-07-04 2010-05-12 シャープ株式会社 半導体記憶装置
JP2008146740A (ja) * 2006-12-08 2008-06-26 Sharp Corp 半導体記憶装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040114438A1 (en) * 2002-12-05 2004-06-17 Sharp Kabushiki Kaisha Semiconductor memory device and erase method for memory array
KR20050084288A (ko) * 2002-12-13 2005-08-26 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 스핀 주입 디바이스 및 이를 사용한 자기 장치, 그리고이들에 사용되는 자성 박막
KR20050027151A (ko) * 2003-09-12 2005-03-17 샤프 가부시키가이샤 비휘발성 반도체 기억 장치
WO2007100626A2 (en) 2006-02-24 2007-09-07 Grandis, Inc. Current driven memory cells having enhanced current and enhanced current symmetry

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Publication number Publication date
CN102473448A (zh) 2012-05-23
WO2011005809A1 (en) 2011-01-13
CN102473448B (zh) 2015-07-01
KR20120046247A (ko) 2012-05-09

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