KR101361440B1 - Transparent thin film transistor using metal thin film as diffusion sources and method thereof - Google Patents
Transparent thin film transistor using metal thin film as diffusion sources and method thereof Download PDFInfo
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- KR101361440B1 KR101361440B1 KR1020130033474A KR20130033474A KR101361440B1 KR 101361440 B1 KR101361440 B1 KR 101361440B1 KR 1020130033474 A KR1020130033474 A KR 1020130033474A KR 20130033474 A KR20130033474 A KR 20130033474A KR 101361440 B1 KR101361440 B1 KR 101361440B1
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- 239000010409 thin film Substances 0.000 title claims abstract description 121
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 71
- 239000002184 metal Substances 0.000 title claims abstract description 71
- 238000009792 diffusion process Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000000151 deposition Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 229910007717 ZnSnO Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 239000012535 impurity Substances 0.000 abstract description 12
- 239000010408 film Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- 239000002243 precursor Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- -1 SiNx Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910003070 TaOx Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
The present invention relates to a transparent thin film transistor and a method of manufacturing the same, and more particularly, by doping a high concentration of impurities in the source and drain regions of the transparent thin film transistor using a metal thin film as a diffusion source to lower the contact resistance of the source and drain regions Increasing the electron mobility of the thin film transistor improves the characteristics of the transparent thin film transistor.
The transparent thin film transistor is a case where all the materials constituting the driving unit of the transistor are transparent, and in particular, an application field is possible when the material constituting the active layer is a transparent material such as ZnO. Transparent thin film transistors are expected to be applied to various applications such as light emitting devices, solar cells.
ZnO thin films are attracting much attention in their application to thin film transistors because they can obtain high mobility even when they are formed at low temperatures. In particular, since the resistance change is large depending on the oxygen content of the ZnO thin film, it is very easy to obtain desired physical properties, and the transparent property of ZnO also has the advantage of being applicable to transparent displays.
[1] has disclosed a technique of using ZnO as a transparent semiconductor material of a thin film transistor.
However, in the case of pure ZnO thin film having no dopant added thereto, when it is exposed to the air for a long time, there is a problem in that electrical properties change as the stoichiometry of Zn and O changes due to the influence of oxygen. In order to solve these disadvantages, dopants such as Al, Ga, In, etc. increase the charge concentration and electrical conductivity, and manufacture high quality thin films with high durability and longevity. have.
For example, in [2], a doped transparent metal oxide layer is locally doped to a transparent metal oxide layer by using a local ion implantation method or a diffusion method to form a high concentration impurity layer. A method of manufacturing a thin film transistor is known, in which a portion of a transparent metal oxide layer that is used as a pixel electrode and an undoped portion is used as a channel region. Local ion implantation, however, is advantageous for thinly doping impurities, but requires expensive equipment and may cause damage to the semiconductor lattice during ion implantation. In addition, the diffusion method is generally applied to a wide range of doping, and since it does not provide specific process conditions for locally doping high-concentration impurities, it may cause a lot of problems until its practical application.
As another example of the prior art, [3] has a Zn precursor adsorbed on a substrate by adsorbing a Zn precursor to the surface of the substrate by atomic layer deposition to form an atomic layer containing Zn and injecting a nitrogen precursor and an oxygen precursor, respectively; A method of forming a nitrogen-doped n-type ZnO semiconductor thin film using a surface chemical reaction between a nitrogen precursor and an oxygen precursor is provided. However, although ALD applied in [3] is advantageous for thin film deposition, it is difficult to apply widely to mass production line due to slow deposition rate because it has to repeat the process of periodically supplying raw materials and removing excess. There is this.
As another example of the prior art, a thin film transistor in which a metal-doped transparent conductive oxide thin film is applied is known, and the transparent conductive oxide thin film is formed of Mo and ZnO such that Mo is doped into the ZnO film simultaneously with ZnO film formation. Simultaneously depositing a Mo-doped ZnO film, coating the metal film with Mo on the Mo-doped ZnO film, and then heat-treating the Mo-doped ZnO film coated with the Mo metal film at a temperature of 250 to 350 ° C. It is formed to include.
In the above documents, in order to dope an impurity in a source region and a drain region, a method of depositing a heat treatment by depositing a metal film on an active layer (channel layer) or by simultaneously depositing a metal and a ZnO film is proposed. In the case of heat treatment in this manner, the interfacial adhesion between the metal film and the active layer can be partially improved, but it is difficult to expect a drastic reduction in contact resistance due to diffusion of metal atoms. In order to diffuse the metal atoms, the heat treatment temperature should be increased close to the melting point of the metal film. At this time, the metal thin film is evaporated into the air or peeled off due to the difference in thermal expansion coefficient with the active layer. There is a problem.
In order to solve these and other problems in connection with the prior art including the prior art described above, there is a need to selectively dopant high concentration impurities in the source and drain regions using a thermal diffusion method that is easy to implement and practical.
One aspect of the present invention is an interface bonded to the active layer by depositing the active layer, the metal thin film and the active layer in a laminated structure in order to use a metal thin film as a diffusion source, and then selectively doping high concentration impurities in the source and drain regions using a thermal diffusion method It is to provide a highly transparent transparent thin film transistor by lowering the contact resistance of.
In the method of manufacturing a transparent thin film transistor using the metal thin film according to the embodiment of the present invention as a diffusion source, forming a ZnO-based first active layer, corresponding to the source electrode and the drain electrode in the upper region of the first active layer A metal thin film is formed on the plurality of regions, and a ZnO-based second active layer is formed on the metal thin film, and the laminated first active layer, the metal thin film, and the second active layer are heat-treated to form the first active layer and the second active layer. The metal atoms of the metal thin film are diffused to form an n-type thin film, and a source electrode and a drain electrode are formed on the n-type thin film.
In the transparent thin film transistor using the metal thin film according to the embodiment of the present invention as a diffusion source, the ZnO-based first active layer, the metal thin film and the ZnO-based second active layer are sequentially formed in a laminated structure, and the thermal diffusion method is used. An n-type thin film formed by diffusing the metal atoms of the metal thin film on the first and second active layers; And a drain electrode and a source electrode formed on the n-type thin film.
As described above, the present invention forms an n-type metal film by depositing an active layer, a metal thin film, and an active layer in a stacked structure, and then heat-treating it. By doping, the contact resistance of the interface bonded to the active layer may be lowered to increase the electron mobility, thereby improving the characteristics of the transparent thin film transistor.
1 is a cross-sectional view of a transparent thin film transistor using a metal thin film as a diffusion source according to an embodiment of the present invention.
2A to 2F are diagrams showing process steps of a method of manufacturing a transparent thin film transistor using a metal thin film as a diffusion source according to an embodiment of the present invention.
Figure 3 is a graph showing the XPS analysis results measured after depositing and heat-treating a metal thin film between the ZnO-based active layer according to an embodiment of the present invention.
4 is a graph showing a transfer characteristic curve for explaining electrical characteristics of a transparent thin film transistor using a metal thin film as a diffusion source according to an embodiment of the present invention.
The transparent thin film transistor using the metal thin film as a diffusion source according to the embodiment of the present invention forms a metal thin film on the ZnO-based active layer and forms a ZnO-based active layer thereon to heat-treat to form an n-type thin film doped with high concentration impurities. and forming source and drain electrodes on the n-type thin film.
The n-type thin film is formed in the source region and the drain region, respectively. The metal thin film used for the n-type thin film is a metal film of Group 3 element such as indium (In) or antimony (Sb) in a thickness range of 10 to 50 nm. It may be formed by vapor deposition. The thickness of the metal thin film may vary depending on the thickness of the transparent thin film.
As the metal thin film formed on the upper and lower portions of the ZnO-based active layer is subjected to heat treatment, the metal atoms of the metal thin film diffuse into the upper and lower ZnO-based active layers to form an n-type thin film doped with high concentration impurities. Depending on the type of thin film transistor, an n-type thin film may be formed on the ZnO-based active layer, or an n-type thin film may be formed on the source and drain electrodes.
The transparent thin film transistor according to the present invention may have a structure as shown in FIG. 1. Referring to FIG. 1, a
Although not shown in the embodiment, a staggered top-gate type structure, a coplanar bottom-gate type structure, and a coplanar top-gate type structure type) may have a structure.
For convenience of description, the manufacturing process of each layer will be described in detail with reference to FIGS. 2A to 2F with reference to the transparent thin film transistor of the staggered top gate type structure of FIG. 1.
Glass, silicon, and plastics may be used as the
The
The
As shown in FIG. 2A, the ZnO-based
The n-type
Then, a ZnO-based
Then heat treatment as shown in Figure 2d. The heat treatment here is carried out for 10 to 30 minutes at a temperature of 300 ℃ to 400 ℃. By heat treatment, the metal atoms of the metal
Then, as shown in FIG. 2F, source and drain
Experimental results for determining the characteristics of the n-type
FIG. 3 shows a ZnO thin film, a metal thin film and a ZnO-based thin film, and a ZnO-based active layer respectively disposed on the upper and lower portions of a metal thin film formed by, for example, depositing indium (In) to a thickness of 10 to 50 nm. XPS analysis results after heat treatment for 10 to 30 minutes at 300 ℃ to 400 ℃ temperature for the structure. It can be seen from the graph of FIG. 3 that indium (In) is doped into the ZnO thin film.
4 is a graph showing a transfer characteristic curve for explaining the electrical characteristics of a transparent thin film transistor to which the n-type thin film according to the present invention is applied, and the interface contact resistance between the source and drain regions and the ZnO-based active layer is reduced through heat treatment. The drain current was increased, and the electron mobility was found to increase from 14 cm 2 / Vsec to 22 cm 2 / Vsec.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken as limitations. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
10: substrate
20: gate electrode
30: gate insulating film
40 ZnO-based active layer
50: n-type thin film
51: metal thin film
52: ZnO-based active layer
60: source electrode, drain electrode
Claims (8)
Forming a metal thin film on a plurality of regions corresponding to the source electrode and the drain electrode of the upper region of the first active layer,
Forming a ZnO-based second active layer on the metal thin film,
Heat-treating the stacked first active layer, the metal thin film, and the second active layer to diffuse the metal atoms of the metal thin film to the first active layer and the second active layer to form an n-type thin film,
And a source electrode and a drain electrode formed on the n-type thin film.
The metal thin film is a method of manufacturing a transparent thin film transistor using a metal thin film as a diffusion source, characterized in that formed by depositing a metal of the Group 3 element including indium and antimony.
The thickness of the metal thin film is a method of manufacturing a transparent thin film transistor using a metal thin film as a diffusion source, characterized in that 10 to 50 nm.
The heat treatment is a method of manufacturing a transparent thin film transistor using a metal thin film as a diffusion source, characterized in that performed for 10 to 30 minutes at 300 ℃ to 400 ℃.
The ZnO-based first and second active layers are ZnInO, ZnSnO, ZnGaO a transparent thin film transistor using a metal thin film as a diffusion source, characterized in that at least one selected from the group consisting of a thin film transistor.
And a drain electrode and a source electrode formed on the n-type thin film. The transparent thin film transistor using a metal thin film as a diffusion source.
The metal thin film is a transparent thin film transistor using a metal thin film as a diffusion source, characterized in that formed by depositing a metal of the Group III element including indium and antimony.
The ZnO-based first and second active layers are ZnInO, ZnSnO, ZnGaO transparent thin film transistor using a metal thin film as a diffusion source, characterized in that at least one selected from the group consisting of.
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| KR1020130033474A KR101361440B1 (en) | 2013-03-28 | 2013-03-28 | Transparent thin film transistor using metal thin film as diffusion sources and method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020130033474A KR101361440B1 (en) | 2013-03-28 | 2013-03-28 | Transparent thin film transistor using metal thin film as diffusion sources and method thereof |
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| KR101361440B1 true KR101361440B1 (en) | 2014-02-24 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018049265A (en) * | 2016-09-08 | 2018-03-29 | グッドリッチ コーポレイション | Apparatus and methods of electrically conductive optical semiconductor coating |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007004729A1 (en) | 2005-07-06 | 2007-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
| KR20100028347A (en) * | 2008-09-04 | 2010-03-12 | 한국전자통신연구원 | Method for preparing metal doped transparent conductive oxide thin film and thin film transistor using the same |
| JP2010156963A (en) | 2008-12-05 | 2010-07-15 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| KR20110003775A (en) * | 2009-07-06 | 2011-01-13 | 주성엔지니어링(주) | Metal oxide semiconductor thin film transistor and method for manufacturing the same |
-
2013
- 2013-03-28 KR KR1020130033474A patent/KR101361440B1/en not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007004729A1 (en) | 2005-07-06 | 2007-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
| KR20100028347A (en) * | 2008-09-04 | 2010-03-12 | 한국전자통신연구원 | Method for preparing metal doped transparent conductive oxide thin film and thin film transistor using the same |
| JP2010156963A (en) | 2008-12-05 | 2010-07-15 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| KR20110003775A (en) * | 2009-07-06 | 2011-01-13 | 주성엔지니어링(주) | Metal oxide semiconductor thin film transistor and method for manufacturing the same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018049265A (en) * | 2016-09-08 | 2018-03-29 | グッドリッチ コーポレイション | Apparatus and methods of electrically conductive optical semiconductor coating |
| US11852977B2 (en) | 2016-09-08 | 2023-12-26 | Danbury Mission Technologies, Llc | Apparatus and methods of electrically conductive optical semiconductor coating |
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