KR101345175B1

KR101345175B1 - Method of manufacturing semiconductor device

Info

Publication number: KR101345175B1
Application number: KR1020080035341A
Authority: KR
Inventors: 타케시 아오야마; 테츠야 마츠오; 마사루 안자이
Original assignee: 신닛테츠 수미킨 가가쿠 가부시키가이샤
Priority date: 2007-04-16
Filing date: 2008-04-16
Publication date: 2013-12-26
Also published as: KR20080093394A; JP4879073B2; JP2008270237A; TW200845241A; TWI421953B

Abstract

[PROBLEMS] To provide a method for manufacturing a semiconductor device which can sufficiently reduce the thickness of the adhesive layer between the semiconductor element and the support member, and can sufficiently suppress voids in the adhesive layer and improve the yield.

[Measures] A method of manufacturing a semiconductor device in which a semiconductor element 1 is adhered to a support member 11 through an adhesive layer 2 '.

A step of preparing an adhesive addition semiconductor element 10 including the semiconductor element 1 and a film adhesive 2 adhered to a part of one or more surfaces of the semiconductor element 1;

The adhesive addition semiconductor element 10 is disposed on the support member 11 such that the film adhesive 2 is in contact with the support member 11, and the melt viscosity of the film adhesive 2 is 30 to 30. The adhesive on the support member 11 is bonded to the semiconductor element 1 by heat pressing the film-like adhesive 2 in a range of 1/10 to 1/2 at a temperature in the range of 300 Pa · s. And a step of adhering through the layer (2 ').

Method for manufacturing semiconductor device

Description

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE [0002]

The present invention relates to a method of manufacturing a semiconductor device.

Conventionally, silver paste is mainly used for joining a semiconductor element and supporting members, such as a lead frame, when manufacturing a semiconductor device. However, in recent years, the lead frame used in accordance with the miniaturization and high performance of semiconductor devices is also required to be miniaturized and refined, and the silver paste is pushed out during wire bonding or defects due to the inclination of the semiconductor element occur, or the adhesive It was not possible to completely cope with the request because of the difficulty in controlling the thickness of the layer or the generation of voids in the adhesive layer.

Therefore, in recent years, a method of manufacturing a semiconductor device using a film adhesive in place of a silver paste and using an adhesive addition semiconductor element in which a film adhesive is adhered to a semiconductor element has been adopted. For example, Japanese Patent Application Laid-Open No. 7 Japanese Patent Laid-Open No. 45557 (Patent Document 1) and Japanese Patent Laid-Open No. 3-268345 (Patent Document 2) disclose a method for producing such an adhesive-added semiconductor device.

In addition, in recent years, with the increase in the density of semiconductor devices, for example, chip stacking, in which a plurality of semiconductor elements are stacked and used, has been performed. Therefore, not only the thickness of the member used for semiconductor devices, such as a semiconductor element and a support member, but also the thickness of the adhesive bond layer between a semiconductor element and a support member is calculated | required. However, in the case of using the adhesive-attached semiconductor element as described in the above-mentioned patent document or the like, the thickness of the film-like adhesive of the adhesive-added semiconductor element is almost the thickness of the adhesive layer, and the thickness of the film-like adhesive is smooth or adhesive. There is a problem in that it is difficult to make the thickness of the adhesive layer sufficiently thin because there is a limit from the viewpoint of the properties.

[Patent Document 1] Japanese Patent Application Laid-Open No. 7-45557

[Patent Document 2] Japanese Patent Application Laid-Open No. 3-268345

This invention is made | formed in view of the subject which the said prior art has, The semiconductor device which can make thickness of the adhesive bond layer between a semiconductor element and a support member sufficiently thin, and can fully suppress voids in an adhesive bond layer, and can improve a yield. An object of the present invention is to provide a method for producing the same.

MEANS TO SOLVE THE PROBLEM As a result of earnestly researching in order to achieve the said objective, in the method of manufacturing the semiconductor device which the semiconductor element adhere | attached on the support member through the adhesive layer, the film adhesive is adhere | attached on a part of the surface of a semiconductor element. By heat-compression-bonding such an adhesive-added semiconductor element and a support member under specific conditions using an adhesive-added semiconductor element, the thickness of the adhesive layer between the semiconductor element and the support member can be sufficiently thin, and the voids in the adhesive layer can be sufficiently suppressed to yield The inventors have found that they can improve the present invention and have completed the present invention.

That is, the manufacturing method of the semiconductor device of this invention is a method of manufacturing the semiconductor device which the semiconductor element adhere | attached on the support member through the adhesive bond layer,

A step of preparing an adhesive-added semiconductor element having a semiconductor element and a film adhesive bonded to a part of at least one surface of the semiconductor element;

The adhesive-attached semiconductor element is disposed on the support member such that the film adhesive comes into contact with the support member, and the film adhesive of the film adhesive is at a temperature such that the melt viscosity of the film adhesive is in the range of 30 to 300 Pa · s. And a step of adhering the semiconductor element onto the support member through the adhesive layer by thermally compressing the film so as to have a thickness in the range of 1/10 to 1/2.

Moreover, in the manufacturing method of the semiconductor device of this invention, it is preferable that the thickness of the adhesive bond layer after the said hot pressing is the range of 1-10 micrometers.

Moreover, in the manufacturing method of the semiconductor device of this invention, it is preferable that the area of the adhesive bond layer after the said heat-compression bonding is an area of 0.8-1.2 times the said semiconductor element.

Moreover, in the manufacturing method of the semiconductor device of this invention, it is preferable that the said film adhesive is in the range of 30-300 Pa.s in melt viscosity in temperature of 100 degreeC.

Moreover, in the manufacturing method of the semiconductor device of this invention, when hot-pressing the said adhesive agent-containing semiconductor element and the said support member, it is preferable that the heat | fever crimping temperature is 40-200 degreeC.

Moreover, in the manufacturing method of the semiconductor device of this invention, when hot-pressing the said adhesive agent-containing semiconductor element and the said support member, it is preferable that the heat | fever crimping pressure is a range of 0.1-10 Mpa.

Moreover, according to the manufacturing method of the semiconductor device of this invention, the thickness of the adhesive bond layer between a semiconductor element and a support member can be made thin enough, and also the voids in an adhesive bond layer can be fully suppressed and a yield can be improved. In other words, it is difficult to make the thickness of the film adhesive sufficiently thin (for example, less than 10 μm) from the viewpoint of the smoothness and adhesiveness of the film adhesive, so that a semiconductor device may be manufactured using a conventional adhesive addition semiconductor element. In this case, the thickness of the adhesive layer between the semiconductor element and the support member could not be made sufficiently thin. On the other hand, in the manufacturing method of the semiconductor device of this invention, the adhesive additional semiconductor element by which the film adhesive is adhere | attached on a part of surface of a semiconductor element is used, and this adhesive addition semiconductor element and a support member are heat-compression-bonded on specific conditions. By doing this, the thickness of the adhesive layer after the hot pressing can be controlled. Therefore, according to the manufacturing method of the semiconductor device of this invention, the thickness of the adhesive bond layer between a semiconductor element and a support member can be made thin enough.

Moreover, in the manufacturing method of the semiconductor device of this invention, since the adhesive agent addition semiconductor element is used, there exists little unevenness of an adhesive bond layer, unlike when using a paste adhesive. Therefore, according to the manufacturing method of the semiconductor device of this invention, the nonuniformity of the thickness of the adhesive bond layer between a semiconductor element and a support member can also be fully suppressed.

Moreover, in the manufacturing method of the semiconductor device of this invention, since the adhesive addition semiconductor element and the support member are heat-compression-bonded on specific conditions as mentioned above, air between an adhesive addition semiconductor element and a support member can be pushed out, and a semiconductor element Voids are less likely to occur when adhering the support member with each other. Therefore, according to the manufacturing method of the semiconductor device of this invention, the void in an adhesive bond layer can be fully suppressed and a yield can also be improved.

(Effects of the Invention)

According to the present invention, the thickness of the adhesive layer between the semiconductor element and the supporting member can be made sufficiently thin, and the method of manufacturing a semiconductor device capable of sufficiently suppressing voids in the adhesive layer and improving the yield can be provided.

Hereinafter, the present invention will be described in detail based on its preferred embodiments.

The manufacturing method of the semiconductor device of this invention is a method of manufacturing the semiconductor device with which the semiconductor element was adhere | attached on the support member through the adhesive bond layer,

A step (first step) of preparing an adhesive-added semiconductor element having a semiconductor element and a film adhesive bonded to a part of one or more surfaces of the semiconductor element;

The adhesive-attached semiconductor element is disposed on the support member such that the film adhesive is in contact with the support member, and the thickness of the film adhesive is at a temperature such that the melt viscosity of the film adhesive is in the range of 30 to 300 Pa · s. It is a method characterized by including the process (2nd process) of adhering the said semiconductor element on the said support member through the said adhesive bond layer by heat-pressing so that it may become a range of 1/10-1/2.

First, the raw material composition of the film adhesive used for the manufacturing method of the semiconductor device of this invention is demonstrated. As a raw material composition of such a film adhesive, a suitable well-known composition for adhesive agents can be used, but in this invention, since it is deforming | transforming a film adhesive at the time of heat compression bonding, it is preferable to use the adhesive composition demonstrated below.

As such a composition for adhesives, what contains (A) silica, (B) phenoxy resin, (C) glycidyl ether type epoxy resin, and (D) epoxy resin hardening | curing agent is mentioned. Moreover, it is preferable to use such an adhesive composition from a viewpoint of the adhesiveness (press bonding property) of a semiconductor element and a support member, suppression of a void generation, and suppression of the stress which arises at the time of bonding between a heterogeneous article.

Although it does not specifically limit as (A) silica used for such an adhesive composition, A crushed form and spherical fused silica powder are mentioned. Especially, it is preferable that it is a mixture of spherical silica of 5-40 micrometers in average particle diameter, and particulate spherical silica of 0.1-5 micrometers in average particle diameter. In this case, it is preferable that it is 50 mass% or less, and, as for the ratio of the fine particle spherical silica to all spherical silica, it is more preferable that it is the range of 5-50 mass%. If the proportion of the particulate spherical silica exceeds 50% by mass, the melt viscosity of the composition tends to increase, and the pressure-adhesive property tends to decrease, and if the proportion of the particulate spherical silica is less than 5% by mass, the surface state of the film adhesive Tends to deteriorate or the film adhesive itself becomes slightly soft. When the microparticle spherical silica ratio is in the range of 5-50 mass%, it becomes a wide particle size distribution and shows the stable surface property and film fluidity.

Although the total amount of silica used in such an adhesive composition is as much as possible in order to reduce a linear expansion rate, it is preferable that it is the range of 50-80 mass% in the whole composition. When silica content exceeds 80 mass%, there exists a tendency for it to become a film-form adhesive which is soft by the viscosity increase of a composition by the lack of the resin component which acts as a binder, and to reduce pressure adhesion remarkably. If the silica content is less than 50% by mass, since the linear expansion coefficient cannot be sufficiently reduced, the action of suppressing the stress between the semiconductor chip and the lead frame and the circuit board is small, which is not preferable. For example, it may not be able to withstand the stresses generated during the temperature cycle test (-65 to 150 ° C) after being assembled into a package.

As (B) phenoxy resin used for such an adhesive composition, a well-known phenoxy resin can be used. The phenoxy resin is obtained from, for example, bisphenol and epichlorohydrin such as bisphenol A, and is usually a thermoplastic resin having a molecular weight of 10,000 or more. As such a phenoxy resin, it is preferable to show the characteristic that compatibility is good and adhesiveness is good from a structure similar to an epoxy resin. Examples of such phenoxy resins include bisphenol A-type bisphenol A / F mixed phenoxy resins and bromine phenoxy resins, as well as bisphenol A-type main skeletons.

As (C) glycidyl ether type epoxy resin used for such an adhesive composition, a phenol novolak glycidyl ether type, an orthocresol novolak glycidyl ether type, fluorene bisphenol glycidyl ether Type, triazine glycidyl ether type, naphthol glycidyl ether type, naphthalene diol glycidyl ether type, triphenyl glycidyl ether type, tetraphenyl glycidyl ether type, bisphenol A glycidyl ether type, bisphenol Epoxy resins, such as F glycidyl ether type, bisphenol AD glycidyl ether type, bisphenol S glycidyl ether type, and trimetholmethane glycidyl ether type, are mentioned. Among these, those having two or more glycidyl ether groups in the molecule are preferable. These glycidyl ether type epoxy resins can be used individually by 1 type or in combination of 2 or more types.

In addition, although the mixing ratio of such (C) epoxy resin and (B) phenoxy resin can be suitably selected by the combination of resin to be used, the softening point of the mixture of a resin component is preferably 100 degrees C or less from a viewpoint of pressure adhesion, More Preferably it is 50-100 degreeC, It is preferable to set it as the mixing ratio which becomes the range of 65-90 degreeC most preferably. When the softening point of a resin component exceeds the said upper limit, there exists a tendency for a film adhesive to harden | solidify or to recede, and to press-bond on mild conditions. On the other hand, when a softening point is less than the said lower limit, adhesiveness is strongly expressed on the surface of a film adhesive, handling property becomes remarkably worse, and there exists a tendency which the problem that a film adhesive flows at the time of normal temperature storage arises. Here, a resin component means (C) epoxy resin, (B) phenoxy resin, and the resin (except (D) epoxy resin hardening | curing agent) added as needed, and the softening point of a resin component is these The softening point at the time of setting it as a uniform composition is said. And the mass ratio calculated by (B) phenoxy resin / (C) epoxy resin is 0.02-1, Preferably it is the range of 0.1-0.7.

The resin component in such an adhesive composition may contain an epoxy resin and a phenoxy resin as a main component, but may contain a small amount of other resin component as long as it does not impair the effects of the present invention. It is preferable that the ratio of the phenoxy resin in a resin component in a composition is 50 mass% or less. By making the ratio of a phenoxy resin into 50% or less, it becomes easy to provide supportability as a film adhesive. Here, it is preferable that the ratio of the phenoxy resin in a resin component exists in the range of 10-50 mass%. If the ratio of the phenoxy resin is less than 10% by mass, the film adhesive will recede and the softening point of the resin component will also be lowered, so that the supportability by the film adhesive alone tends to be less likely to be expressed. On the other hand, when the ratio of a phenoxy resin exceeds 50 mass%, a film adhesive becomes hard and it exists in the tendency for it to become easy to tear by a film adhesive alone.

As the (D) epoxy resin curing agent used in such an adhesive composition, a known curing agent such as amines, acid anhydrides, and polyhydric phenols can be used, but a predetermined temperature or higher, for example, a temperature at which the resin component requires adhesiveness It is preferable to use the latent hardening | curing agent which exhibits sclerosis | hardenability and exhibits quick-curing property above. As the latent curing agent, dicyandiamide, imidazoles, hydrazides, boron trifluoride-amine complexes, amineimides, polyamine salts and modified substances thereof, and microcapsule-type ones can also be used. These latent hardeners can be used individually by 1 type or in combination of 2 or more type. By using a latent curing agent, it is possible to provide a film adhesive having high storage stability capable of long-term storage at room temperature. Moreover, it is preferable that the usage-amount of an epoxy resin hardening | curing agent is 0.5-50 mass% with respect to an epoxy resin.

Moreover, such an adhesive composition may contain butadiene type rubber, silicone rubber, etc. as another additive, for example as a coupling agent, antioxidant, a flame retardant, a coloring agent, and a stress relaxation agent. In addition, such an adhesive composition may contain the solvent as needed. As such a solvent, for example, aromatic hydrocarbons such as toluene and xylene; ketone solvents such as MIBK and MEK; ether solvents such as monoglyme and diglyme can be used. These solvent can be used individually by 1 type or in combination of 2 or more type. Moreover, as conditions for drying such an adhesive composition, what is necessary is just the condition high below the hardening start temperature of the adhesive composition, For example, it is preferable that drying temperature is the range of 50-150 degreeC, and drying time is the range for 1 to 30 minutes. Do.

As mentioned above, although the raw material composition of the film adhesive used for the manufacturing method of the semiconductor device of this invention was demonstrated, the manufacturing method of the semiconductor device of this invention is demonstrated below, referring FIG. BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic side cross-sectional view for demonstrating one suitable embodiment of the manufacturing method of the multilayer printed wiring board of this invention. 1 (a) corresponds to the first step, and FIGS. 1 (b) and (c) correspond to the second step.

In the 1st process, the adhesive agent-containing semiconductor element 10 provided with the semiconductor element 1 as shown to FIG. 1 (a), and the film adhesive 2 adhere | attached on one or more surface surfaces of the semiconductor element 1 is shown. Prepare.

The semiconductor element 1 is obtained by cutting a semiconductor wafer into a desired size. In addition, the film adhesive 2 is a thing adhere | attached on one or more surface surfaces of the semiconductor element 1, and is formed from the composition for adhesive agents mentioned above. In this invention, it is preferable that the film adhesive 2 is adhere | attached on the center part of the surface of the semiconductor element 1 from a viewpoint of suppressing the push out of an adhesive agent in the semiconductor device obtained.

Moreover, it is preferable that the melt viscosity in temperature 100 degreeC of this film adhesive 2 is in the range of 30-300 Pa.s, and it is more preferable that it is the range of 50-100 Pa.s. If melt viscosity is less than the said minimum, since it becomes necessary to heat-press at high temperature or pressure in the 2nd process mentioned later, it exists in the tendency which becomes difficult to control the thickness of the adhesive bond layer in the semiconductor device obtained, When the upper limit is exceeded, there is a tendency that defects such as the sticking out of the adhesive and the inclination of the semiconductor element tend to occur in the semiconductor device to be obtained.

Moreover, it is preferable that it is the range of 10-200 micrometers, and, as for the thickness of the film adhesive 2, it is more preferable that it is the range which is 20-100 micrometers. It exists in the tendency which manufacturing thickness is less than the said minimum from a viewpoint of the smoothness and adhesiveness of a film adhesive. On the other hand, when thickness exceeds the said upper limit, there exists a tendency which cannot thin enough the thickness of the adhesive bond layer in the semiconductor device obtained. In addition, the area of the film adhesive 2 is preferably 0.2 to 0.6 times the area of the semiconductor element 1. If the area is less than the lower limit, the adhesiveness tends to be insufficient, while if the area exceeds the upper limit, defects such as the sticking out of the adhesive tend to occur easily.

Adhesive-attached semiconductor element 10 is provided with semiconductor element 1 and film adhesive 2 adhere | attached on one or more surface part of semiconductor element 1.

Although it does not specifically limit as a method of manufacturing such an adhesive addition semiconductor element 10, For example, the following methods are mentioned. That is, (iii) First, the semiconductor wafer laminated | stacked on the surface of the dicing support film through the adhesion layer, and the said composition for adhesive agents is prepared, Next, the film adhesive 2 is a semiconductor on the surface of the said semiconductor wafer. A method of forming a film adhesive 2 by adhering to a part of one or more surfaces of the element 1, and then cutting the semiconductor wafer into pieces to obtain an adhesive-added semiconductor element 10, (ii) After preparing the semiconductor wafer laminated | stacked on the surface of the dicing support film through the adhesion layer, and the said composition for adhesives, Next, the said semiconductor wafer is cut | disconnected and separated into several semiconductor elements 1, The film adhesive 2 is adhered to a part of one or more surfaces of the semiconductor element 1 on the surface of the semiconductor element 1, and the film adhesive 2 is formed to obtain an adhesive addition semiconductor element 10. The method can be mentioned.

In the case of employing the method of (i) in the method for manufacturing the adhesive-added semiconductor element 10, since the film-like adhesive is adhered to at least one surface portion (preferably the central portion) of the semiconductor element, the semiconductor wafer The semiconductor wafer can be cut | disconnected so that the cut part (dicing street) which arises at the time of cutting | disconnecting may become the location where the film adhesive is not formed on the surface of a semiconductor wafer. For this reason, in the case of dicing, not only the semiconductor wafer but also the film adhesive, tearing and unevenness of the semiconductor element, which tends to occur, tends to be suppressed and the yield tends to be improved. Moreover, according to the method of said (ii), since it is not necessary to cut | disconnect a film adhesive at the time of cut | disconnecting a semiconductor wafer, the tearing and aberration of a semiconductor element at the time of dicing are suppressed, and there exists a tendency for a yield to improve.

Moreover, as a method of forming the film adhesive 2, the method by well-known pattern formation methods, such as (i) the method by screen printing, (ii) the transfer method, and (i) the photoresist method, It can be adopted. As a method of cutting a semiconductor wafer, various methods such as a stealth dicing method and a line dicing method can be adopted in addition to a method of cutting a semiconductor wafer using a known dicing blade.

In the second step, first, the adhesive addition semiconductor element 10 is disposed on the support member 11 such that the film adhesive 2 is in contact with the support member 11 (see FIG. 1B).

As the support member 11, a circuit board, a lead frame, a semiconductor element, a ceramic mix board | substrate, and a glass substrate are mentioned, for example. In addition, the support member 11 may be fixed on the circuit board 12, for example, as shown in FIG. 1 (b), or may be electrically connected with the bonding wire 13, etc. FIG. Examples of the bonding wires 13 include metals such as gold and aluminum.

In the second step, the adhesive-attached semiconductor element 10 and the support member 11 are then subjected to the film-like adhesive 2 at a temperature at which the melt viscosity of the film-like adhesive 2 is in a range of 30 to 300 Pa · s. The semiconductor element 1 is adhered to the support member 11 via the adhesive layer 2 'by heat-compression bonding so that the thickness may be in the range of 1/10-1/2 (see FIG. 1 (c)).

As described above, when the adhesive addition semiconductor element 10 and the support member 11 are heat-compressed, it is necessary to set the heat-compression temperature to a temperature at which the melt viscosity of the film adhesive 2 is in the range of 30 to 300 Pa · s. When the melt viscosity of the film adhesive is less than 30 Pa · s, defects such as the sticking out of the adhesive and the inclination of the semiconductor element tend to occur in the semiconductor device to be obtained. On the other hand, when the melt viscosity of the film adhesive exceeds 300 Pa · s, the film adhesive is sufficiently deformed. In the semiconductor device which cannot be made, the thickness of an adhesive bond layer cannot be made thin enough. In addition, from the viewpoint of sufficiently deforming the adhesive while sufficiently suppressing defects such as pushing out of the adhesive and inclination of the semiconductor element, the heat-compression temperature is set at a temperature at which the melt viscosity of the film adhesive 2 is in the range of 50 to 150 Pa · s. It is desirable to. Moreover, it is preferable that it is the range of 40-200 degreeC, and, as for such heat compression temperature, it is more preferable that it is the range which is 50-150 degreeC.

In addition, when carrying out heat-compression bonding of the adhesive additional semiconductor element 10 and the support member 11 in this way, it is necessary to heat-compress so that the thickness of the film adhesive 2 may be in the range of 1/10-1/2. When heat-compression bonding so that the thickness of the said film adhesive is less than 1/10, defects, such as an adhesive push-out and the inclination of a semiconductor element, tend to arise in the semiconductor device obtained, and thickness exceeds 1/2 In this case, the object of the present invention that the thickness of the adhesive layer is sufficiently thin in the semiconductor device obtained cannot be achieved. In addition, in order to deform a film adhesive to the thickness of the said range, it is necessary to control not only the said heat compression temperature but a heat compression pressure. It is preferable that it is the range of 0.1-10 Mpa, and, as for such a heat compression pressure, it is more preferable that it is the range which is 0.1-1 Mpa. If the hot pressing pressure is less than the lower limit, the adhesive layer after the hot pressing tends not to have a desired thickness, while if the hot pressing exceeds the upper limit, a defect such as extrusion of the adhesive tends to occur in the semiconductor device obtained. There is this.

Moreover, in this 2nd process, it is preferable that the area of the adhesive bond layer 2 'after heat press bonding is 0.8-1.2 times the area of the semiconductor element 1. If the area is less than the lower limit, the adhesiveness tends to be insufficient. On the other hand, if the upper limit is exceeded, the bonding wire may be covered with the adhesive by being pushed out of the adhesive in the semiconductor device to be obtained, and at the interface between the adhesive and the sealing resin. It exists in the tendency for the defect that a bonding wire in to break to break easily to occur.

Moreover, in this 2nd process, it is preferable that the thickness of the adhesive bond layer after hot pressing is the range of 1-30 micrometers, It is more preferable that it is the range of 1-20 micrometers, It is especially preferable that it is the range of 5-10 micrometers. . If the thickness is less than the lower limit, the adhesiveness tends to be insufficient, while if the thickness exceeds the upper limit, the void may not be sufficiently discharged.

According to the manufacturing method of the semiconductor device of this invention as described above, the thickness of the adhesive bond layer after hot pressing can fully be made thin. That is, in the manufacturing method of the semiconductor device of this invention, the film adhesive of the said adhesive agent-added semiconductor element is made to deform | transform suitably by making heat compression temperature into the specific temperature at the time of heat-pressing the said adhesive agent-added semiconductor element and the said support member. . Moreover, in the manufacturing method of the semiconductor device of this invention, the deformation | transformation degree of the said film adhesive is controlled by making heat press pressure into a specific pressure, and the thickness of the adhesive bond layer after heat press bonding is controlled. Therefore, even when the thickness of the film adhesive before hot pressing is thick, the thickness of the adhesive bond layer after hot pressing can be made into desired thickness. Moreover, in the manufacturing method of the semiconductor device of this invention, since the adhesive addition semiconductor element which the film adhesive is adhere | attached on a part of the surface of a semiconductor element is used, defects, such as the extrusion of an adhesive, even if a film adhesive is deformed This is difficult to occur.

Moreover, in the manufacturing method of the semiconductor device of this invention, since the adhesive addition semiconductor element and a support member are heat-compression-bonded on specific conditions as mentioned above, the air between an adhesive addition semiconductor element and a support member can be pushed out, and a semiconductor When joining an element and a support member, a void hardly arises. Therefore, according to the manufacturing method of the semiconductor device of this invention, the void in an adhesive bond layer can be fully suppressed and a yield can also be improved.

As mentioned above, although preferred embodiment of the manufacturing method of the semiconductor device of this invention was described, the manufacturing method of the semiconductor device of this invention is not limited to the said embodiment. For example, the semiconductor device bonded by the semiconductor device manufacturing method of the present invention is used as a support member, and the semiconductor device is further adhered to the support member by the semiconductor device manufacturing method of the present invention, so-called chip stack mounting. It can carry out suitably.

(Example)

Hereinafter, although this invention is demonstrated further more concretely based on an Example and a comparative example, this invention is not limited to a following example.

(Example 1)

First, a dicing tape (Lintec Co., Ltd. product name, "G-11") in which the adhesion layer is formed on the surface of a dicing support film was prepared, and the 6-inch semiconductor wafer was affixed on the dicing tape. .

Next, the adhesive composition (made by Shin-Nitetsu Chemical Co., Ltd., "MB301) was prepared. Then, using a screen printing machine (manufactured by New Long-Semitsu Kogyo Co., Ltd., product name "LS-15GX"), the composition for an adhesive agent was cut | disconnected on the conditions of 80 degree of squeegee angle, 2 kg of pressure, and 30 mm / s of feeding speeds. The composition for adhesives was printed on the semiconductor wafer so that it might be printed in one or more center surface. Then, it dried at the temperature of 80 degreeC for 10 minutes, and also dried at the temperature of 150 degreeC for 1 minute, and obtained the adhesive agent semiconductor wafer. In the obtained adhesive addition semiconductor wafer, the several individualized film adhesive of 4 mm x 4 mm size was formed on the semiconductor wafer so that the space | interval of adjacent individualized film adhesives might be 12 mm.

Next, using a diamond blade, the dicing street is set to 0.1 mm so that the dicing street is the center of adjacent individualized film adhesives, and the semiconductor wafer is cut to obtain a plurality of adhesives having a size of 10 mm x 10 mm. The additional semiconductor element 10 was obtained (see FIG. 1 (a)). Moreover, the thickness of the film adhesive 2 in the obtained adhesive addition semiconductor element 10 was 30 micrometers, and the melt viscosity in 150 degreeC of the film adhesive 2 was 50 Pa.s.

Next, the obtained adhesive addition semiconductor element 10 is arrange | positioned on the support member 11 so that the film adhesive 2 may contact the support member 11, and it heat-presses on the conditions of the temperature of 150 degreeC, and the pressure of 1 Mpa. To obtain a semiconductor device (see Figs. 1 (b) and (C)). In the obtained semiconductor device, the thickness of the adhesive bond layer 2 'after the hot pressing was 5 micrometers, and the thickness was uniform. Moreover, in the obtained semiconductor device, the adhesive agent was not pushed out and the adhesiveness of the semiconductor element 1 and the support member 11 was also sufficient.

The number of generation | occurrence | production of the void in the adhesive bond layer in a semiconductor device was evaluated by the method shown below.

(Iii) Preparation of samples for evaluation

The obtained adhesive addition semiconductor element 10 was heat-compression-bonded on the transparent glass substrate on conditions of the temperature of 150 degreeC, and the pressure of 1 Mpa, and the semiconductor device was obtained. Moreover, the obtained adhesive addition semiconductor element 10 was adhere | attached on the transparent glass substrate under normal bonding conditions (temperature 100 degreeC, pressure 0.1Pa), and the comparative semiconductor device was obtained.

(Ii) evaluation of voids

The state of a void was observed from the glass surface side of the sample for evaluation, and the number of voids was evaluated. As a result of counting the number of voids having a diameter of 10 µm or more, the number of voids was 10 or more when the obtained adhesive-added semiconductor element 10 was bonded under conditions of a temperature of 100 ° C. and a pressure of 0.1 Pa. On the other hand, when the adhesive agent-attached semiconductor element 10 obtained was heat-squeezed under the conditions of temperature 150 degreeC and a pressure of 1 Mpa (Example 1), the number of voids was 0 pieces. Therefore, according to this invention, it was confirmed that the void in an adhesive bond layer can be fully suppressed.

As described above, according to the present invention, the thickness of the adhesive layer between the semiconductor element and the supporting member can be made sufficiently thin, and a method of manufacturing a semiconductor device capable of sufficiently suppressing voids in the adhesive layer and improving the yield can be provided. It becomes possible.

1: is a schematic side cross-sectional view which shows one suitable embodiment of the manufacturing method of the multilayer printed wiring board of this invention (FIG. 1 (a) corresponds to a 1st process, and FIG. 1 (b) and (c) is a 2nd process). Corresponding to).

1: semiconductor device 2: film adhesive

2 ': adhesive layer 10: adhesive addition semiconductor element

11 support member 12 circuit board

13: bonding wire

Claims

A method of manufacturing a semiconductor device in which a semiconductor element is adhered to a support member through an adhesive layer:

A step of preparing an adhesive-added semiconductor element comprising a semiconductor element and a film adhesive adhered to a portion of at least one surface of the semiconductor element; And

The adhesive-attached semiconductor element is disposed on the support member such that the film adhesive is in contact with the support member, and the thickness of the film adhesive is at a temperature such that the melt viscosity of the film adhesive is in the range of 30 to 300 Pa · s. And bonding the semiconductor element onto the support member through the adhesive layer by thermally compressing the resin so as to be in a range of 1/10 to 1/2. 2.

The method for manufacturing a semiconductor device according to claim 1, wherein the thickness of the adhesive layer after the heat compression is in a range of 1 to 10 µm.

The method of manufacturing a semiconductor device according to claim 1 or 2, wherein an area of the adhesive layer after the hot pressing is 0.8 to 1.2 times the area of the semiconductor element.

The method of manufacturing a semiconductor device according to claim 1, wherein the film adhesive has a melt viscosity at a temperature of 100 ° C. in a range of 30 to 300 Pa · s.

The method for manufacturing a semiconductor device according to claim 1, wherein a heat compression temperature is in a range of 40 to 200 ° C. when the adhesive addition semiconductor element and the support member are hot pressed.

The method for manufacturing a semiconductor device according to claim 1, wherein a heat compression pressure is in a range of 0.1 to 10 MPa when the adhesive addition semiconductor element and the support member are thermally compressed.