KR101340768B1 - Etching apparatus, operating method thereof and method of manufacturing display device using the same - Google Patents

Abstract

Disclosed are an etching apparatus capable of suppressing contamination, an operation method thereof, and a manufacturing method of a display device using the same.

In the etching apparatus of the present invention, an electrode is fixed on a base, and a plurality of guides are formed which are movable in the transverse direction with respect to the base and which fix an object located at a predetermined height from the electrode.

According to the present invention, the substrate is spaced apart from the electrode and sprayed onto the bottom surface of the substrate with a strong gas, thereby preventing contamination of the lower electrode and contamination of the substrate bottom by the lower electrode, and furthermore, uniform cooling control of the front surface of the substrate is possible. To provide optimum etching process conditions.

Etching Device, Indicator, Contamination

Description

Etching apparatus, operating method and manufacturing method of display device using same

1 is a view schematically showing a conventional dry etching device.

FIG. 2 is a cross-sectional view illustrating a bottom portion of the dry etching apparatus of FIG. 1. FIG.

3 is a three-dimensional view of the base of FIG.

4 is a three-dimensional view of the base of the dry etching apparatus according to the first embodiment of the present invention.

5 is a cross-sectional view of the base of FIG. 4;

6 is a three-dimensional view of the base of the dry etching apparatus according to a second embodiment of the present invention.

7 is a cross-sectional view of the base of FIG. 6;

<Explanation of symbols for the main parts of the drawings>

111: base 114: lower electrode

117: embossing 119: injection hole

122: pin 125: guide

125a, 131: moving member 125b, 133a: body

125c and 133b: stopper 127: substrate

129: substrate detection sensor

The present invention relates to an etching apparatus, and more particularly, to an etching apparatus capable of suppressing contamination, an operation method thereof, and a manufacturing method of a display device using the same.

Various display devices having the advantages of light and thin are being actively developed. Among them, liquid crystal displays have been attracting attention as representative displays due to their additional advantages such as low power consumption and full color.

The liquid crystal display device changes the arrangement of liquid crystal molecules positioned between two substrates according to a predetermined signal, and displays a predetermined image by using the difference in light transmittance caused by the change of the arrangement structure of the liquid crystal molecules.

The display device including the liquid crystal display device is manufactured by various processes. In particular, an electrode-like pattern may be formed on a substrate by an etching process among various processes.

The etching process is divided into a wet etching process using an etching solution and a dry etching process using an etching gas or ions. The wet etching process is not suitable for performing fine etching because the isotropic etching is performed, whereas the dry etching process is anisotropically etched and thus has an advantage of enabling sophisticated etching. The dry etching process is classified into plasma etching, ion beam milling etching, reactive ion etching (RIE), etc. according to the material for etching.

FIG. 1 is a view schematically showing a conventional dry etching apparatus, FIG. 2 is a cross-sectional view illustrating a bottom portion of the dry etching apparatus of FIG. 1, and FIG. 3 is a view three-dimensionally showing the bottom portion of FIG. 2.

As shown in FIG. 1, in the conventional dry etching apparatus, a sealed space 9 is formed inside by a sidewall part 1 and a cover part 2. The cover portion 2 is fixed to one side and the other side can be opened / closed. In the state in which the cover part 2 is closed to the side wall part 1, the air in the closed space 9 is discharged through the gas discharge part 8 to be in a vacuum state.

An upper electrode 6 is disposed on an inner surface of the cover part 2, and a gas inlet part 7 is installed through the cover part 2. A pipe passage (not shown) may be formed inside the upper electrode 6 to connect the gas inlet 7 to the gas into the sealed space 9. Therefore, the predetermined gas introduced through the gas inlet 7 is introduced into the closed space 8 through the upper electrode 6. The gas is actually a gas used in the etching process, for example, may be Ar gas.

The side wall portion 1 includes a lower electrode 5 facing the upper electrode 6 and a base portion 4 supporting the lower electrode 5.

A substrate (not shown) for an etching process may be mounted on the lower electrode 5.

A power supply unit 3 for supplying power is provided between the upper electrode 6 and the lower electrode 5. As shown in FIG. 1, the upper electrode 6 may be grounded and the power supply unit 3 may supply power only to the lower electrode 5.

The lower electrode 5 is fixedly supported on the base 4, as shown in FIGS. 2 and 3. A plurality of injection holes 17 and embossing 15 are formed in the lower electrode 5. The embossing 15 is integrally formed of the same material as the lower electrode 5, for example, may be made of aluminum (Al).

The injection hole 17 is a member for injecting helium (He) gas onto the lower electrode 5. The substrate seated on the lower electrode 5 may be cooled by the helium gas.

The edge of the base portion 4 is provided with a plurality of pins 11 for raising or lowering the substrate. In the state in which the pin 11 is raised, the substrate is positioned on the pin 11, and then the pin 11 is lowered to seat the substrate on the lower electrode 5. Exactly the substrate can be seated in contact with the top surface of the embossing on the lower electrode 5.

The conventional dry etching apparatus configured as described above has the following problems.

First, there is a problem that the lower electrode 5 is contaminated by a reaction product generated by the reaction of a substrate with a process gas such as Ar gas during the process.

Secondly, when the lower electrode 5 is contaminated, the bottom surface of the substrate seated on the lower electrode 5 may also be contaminated by contact with the lower electrode 5. In particular, the substrate for a liquid crystal display device should satisfy the condition that the light transmittance should be good. If the bottom surface of the substrate is contaminated during the etching process, staining may occur, it may cause a substrate defect.

Thirdly, since the substrate partially contacts the lower electrode 5 via the embossing 15, there are regions of the substrate that are contacted by the embossing 15 and regions that are not. In this case, the area of the substrate that is not contacted by the embossing 15 is cooled by the helium gas injected through the injection hole 17, but the area of the substrate that is contacted by the embossing 15 is due to the embossing 15. This helium gas is not reached and thus no cooling occurs. Therefore, the etching process conditions are different between the area of the substrate contacted by the embossing 15 and the area of the substrate not contacted by the embossing 15, so that a pattern having a uniform thickness cannot be formed. there is a problem. That is, it may cause a pattern defect, and thus not only the defect of the substrate but also the possibility of malfunction of the device may exist.

An object of the present invention is to provide an etching apparatus, an operation method thereof, and a manufacturing method of a display device using the same, by preventing the substrate from contacting the lower electrode, thereby preventing contamination and ensuring temperature uniformity.

According to a first embodiment of the present invention for achieving the above object, an etching apparatus for etching an object, the base portion; An electrode fixed on the base; And a plurality of guides movable in the transverse direction with respect to the base and fixing the object located at a predetermined height from the electrode.

According to a second embodiment of the invention, the base portion; An electrode fixed on the base and having a plurality of injection holes for injecting a predetermined gas; A plurality of pins installed along an edge of the base portion; A plurality of guides movable in the transverse direction with respect to the base and fixing an object located at a predetermined height from the electrode; And a sensing sensor attached to the guide, the method comprising: raising the pin to a first height from the electrode to seat the object; Moving the guide in a transverse direction to approximate the base; The pin is raised from the first height to a second height; Injecting the gas through the injection hole; And etching the object.

According to a third embodiment of the present invention, an etching apparatus for etching an object, the base portion; An electrode fixed on the base; And a plurality of guides movable transversely to the base and fixing the object located at a predetermined height from the electrode, wherein each guide is inserted into the base.

According to the fourth embodiment of the present invention, an etching apparatus for etching an object, the base portion; An electrode fixed on the base; A plurality of guides for fixing the object located at a predetermined height from the electrode; And a plurality of moving members disposed on side surfaces of the base and movable in the horizontal direction, wherein the plurality of guides are formed in each of the moving members.

According to the fifth embodiment of the present invention, the display device is manufactured by forming a pattern by the etching apparatus according to the first, third and fourth embodiments.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The dry etching apparatus of the present invention is basically as shown in FIG. 1. However, in the present invention, the base portion is different from that shown in FIG. 1, and this part will be described as a feature of the present invention.

FIG. 4 is a three-dimensional view of the base of the dry etching apparatus according to the first embodiment of the present invention, and FIG. 5 is a cross-sectional view of the bottom of FIG. 4.

4 and 5, the dry etching apparatus of the present invention is provided with a base 111 on the bottom. The lower electrode 114 is fixedly supported on the base 111. A plurality of embossing 117 and a plurality of injection holes 119 are formed in the lower electrode 114. The injection hole 119 is formed through the lower electrode 114. The injection hole 119 is a member for injecting nitrogen (N2) gas onto the lower electrode 114 and may be supplied from the base 111. To this end, a pipe line may be formed in the base 111 so that the nitrogen (N2) gas is supplied to the injection hole 119. In addition, a mass flow control (MFC) for injecting nitrogen gas into a pipe of the base 111 may be provided outside the base 111. The embossing 117 may be formed in a rectangular shape, but in this case, the contact area between the embossing 117 and the substrate 127 becomes large when the substrate 127 for the etching process is seated on the embossing 117. The part may not be cooled by nitrogen gas, which may cause a problem of worsening the etching process conditions. Therefore, the embossing 117 may be formed in a round shape including a circle or an ellipse. As such, when the embossing 117 is formed in a round shape, when the substrate 127 is seated on the embossing 117, there is a point contact between the substrate 127 and the embossing 117. The contact area between the substrate 127 and the embossing 117 can be minimized, thereby improving the etching process efficiency.

The embossing 117 may be formed of the same material as the lower electrode 114, for example, aluminum (Al). The lower electrode 114 and the embossing 117 formed thereon may be integrally formed using a mold. Although the embossing 117 and the injection hole 119 are formed at regular intervals in FIG. 4, the embossing 117 and the injection hole 119 may be randomly formed as necessary.

The edge of the base 111 is provided with a plurality of pins 122 for raising or lowering the substrate 127 at predetermined intervals. For convenience of description, two are installed in each of the left and right and one in the upper and lower sides in FIG. 4, but the pins 122 may be further increased according to the size of the actual substrate 127. The substrate 127 may be lowered to be seated on the lower electrode 114 for the etching process by the plurality of fins 122, and may be raised to be separated from the lower electrode 114 after the etching process. The plurality of pins 122 may be driven by a motor, which is already well known and will not be described further.

The side of the base 111 is provided with a plurality of guides 125 that are movable in the transverse direction. The guide 125 should have a strong corrosion resistance to withstand the etching process, for example, a ceramic-based material such as alumina (Al2O3). The guide 125 is inserted into the base 111 and movable in the lateral direction 125a and a predetermined height from the lower electrode 114, the substrate 127 is a plurality of pins 122 When lifted by), the stopper 125c for fixing the substrate 127 and the body 125b for connecting the moving member 125a and the stopper 125c and supporting the stopper 125c are provided. Include. In other words, the guide 125 is formed at the bottom of the body 125b to be inserted into the base 111 to move in the lateral direction, and a movable member 125a is formed, and on the upper portion of the body 125b of the substrate 127. A stopper 125c protruding toward the center and fixing the substrate 127 raised by the plurality of pins 122 is formed.

The moving member 125a may be movable in various ways. For example, it is a rack pinion system or a hydraulic system.

The rack pinion scheme allows one member, such as the pinion, to rotate and the other member, such as the rack, to make a linear movement, with each member having threads on the surfaces in contact with each other. The rack is linearly moved by the rotation of the pinion while being engaged with the threads of both members, thereby allowing the rack to move. Applying this to the present invention, the body 125b becomes a rack and a pinion is provided separately. Therefore, the body 125b may be moved laterally by the rotation of the pinion. The pinion can be rotated by a motor.

The hydraulic method is designed to push or pull an object to be moved using hydraulic pressure. Applying this to the present invention, the object is the body (125b), the hydraulic tube is connected to the body (125b). Accordingly, the body 125b may be pushed or pulled in the transverse direction by hydraulic pressure.

The stopper 125c only needs to protrude slightly toward the center of the substrate 127. That is, since the substrate 127 is used as the display area, contamination may occur when the substrate 127 comes in contact with the stopper 125c. Therefore, the stopper 125c may protrude so as to be positioned only at an edge except for the display area on the substrate 127. The moving member 125a and the stopper 125c are formed parallel to each other in the transverse direction. That is, the moving member 125a is formed to be inserted into the center of the base 111 and the stopper 125c protrudes toward the center of the substrate 127.

The substrate detecting sensor 129 for detecting the position of the substrate 127 is attached to the bottom of the stopper 125c of the guide 125. When the substrate 127 is lifted by the plurality of pins 122, the sensing sensor detects whether the substrate 127 contacts the stopper 125c, and the substrate 127 contacts the stopper 125c. If a signal is generated, the operation of raising the plurality of pins 122 is stopped by this signal.

Of course, there is no problem in implementing the present invention without the substrate detection sensor 129. That is, when the substrate detection sensor 129 is not present, the height between the base 111 and the stopper 125c of the guide 125 may be known in advance, and the pin 122 may be raised only by the height. However, in this case, there is a possibility that a predetermined gap exists between the substrate 127 and the stopper 125c raised by the pin 122, so that the reaction product generated during the process flows into the gap to lower the lower electrode 114. The possibility of contamination cannot be ruled out.

Nevertheless, it is clear that the object of the present invention can be sufficiently achieved by the present invention having the guide 125 and the substrate 127 spaced apart from the lower electrode 114 and fixed by the guide 125. However, in order to make the present invention more clear and valuable, it may be more preferable that the substrate detection sensor 129 is provided.

The operation method of the etching apparatus of the present invention configured as described above will be described.

Before the substrate 127 is seated on the lower substrate 127, the guide 125 is moved away from the base 111 in the lateral direction and stopped.

In this state, when the substrate 127 enters from the outside, the plurality of pins 122 formed on the edge of the base 111 rises upward.

After the substrate 127 is seated on the plurality of pins 122, the moving member 125a of the guide 125 is moved laterally into the base 111. In this case, the guide 125 is moved to the extent that the edge of the substrate 127 overlaps the stopper 125c of the guide 125 by a predetermined area.

Next, the plurality of pins 122 are raised again, thereby raising the substrate 127 to the stopper 125c position of the guide 125. In this case, when the substrate detection sensor 129 attached to the bottom of the stopper 125c detects the position of the substrate 127 and reaches the position where the substrate 127 contacts the stopper 125c, Generates a predetermined signal, the operation of raising the plurality of pins 122 by this signal is stopped.

Subsequently, nitrogen (N 2) gas is strongly injected through the injection hole 119 of the lower electrode 114, and the center region of the substrate 127 is supported by the nitrogen gas. If the nitrogen gas is not strongly injected, the center region of the substrate 127 sags downward. Accordingly, the flatness of the substrate 127 may not be maintained, and thus, a non-uniform pattern may be formed during the etching process. The pressure of the nitrogen gas is preferably such that the substrate 127 is maintained at a uniform flatness. However, the optimum pressure of the nitrogen gas may be varied by the size of the substrate 127, the weight of the substrate 127, the shape of the guide 125, and the shape of the stopper 125c of the guide 125. The pressure of nitrogen gas cannot be determined.

Accordingly, the substrate 127 may be cooled by the nitrogen (N2) gas and the central region of the substrate 127 may be supported.

Although nitrogen gas is injected through the injection hole 119 as described above, helium gas may be used in addition to nitrogen gas.

An etching process is performed while the substrate 127 is spaced apart from the lower electrode 114.

When the etching process is completed, the injection of nitrogen gas injected into the injection hole 119 is stopped, the plurality of pins 122 are lowered, and the guide 125 is moved in the horizontal direction outside. That is, the guide 125 is moved to a position away from the base 111 which is the original position.

Therefore, in the first embodiment of the present invention, since a strong nitrogen gas is injected between the substrate 127 and the lower electrode 114, the reaction product generated during the etching process is not attached to the lower electrode 114 by the nitrogen gas. Therefore, the contamination of the lower electrode 114 can be prevented.

In addition, since the lower electrode 114 is not contaminated and the substrate 127 is spaced apart from the lower electrode 114 so that the lower electrode 114 does not come into contact with the lower electrode 114 at all, the lower electrode ( The stain is not generated on the bottom surface of the substrate 127 by the 114, so that contamination of the substrate 127 may be prevented.

In addition, in the first embodiment of the present invention, since the substrate 127 is not in contact with the lower electrode 114 at all, the substrate 127 is spaced apart from the lower electrode 114 and a strong nitrogen gas is supplied therebetween. Since all bottom surfaces of 127 are uniformly cooled by nitrogen gas, uniform temperature control is possible, so that the etching process efficiency is improved, and a higher quality etching process is possible.

FIG. 6 is a three-dimensional view of the base of the dry etching apparatus according to the second embodiment of the present invention, and FIG. 7 is a cross-sectional view of the bottom of FIG. 6.

6 and 7 are basically similar to FIGS. 4 and 5 showing the first embodiment of the present invention. However, the second embodiment of the present invention is different from fixing the guide 133 to a separate object, for example, the moving member 131, without inserting the base portion.

In detail, in the second embodiment of the present invention, the lower electrode 114 is fixed on the base 111. The lower electrode 114 has a plurality of embossing 117 is formed in point contact with the substrate 127 for the etching process, to cool the substrate 127 while supporting the central region of the substrate 127 An injection hole 119 into which nitrogen gas or helium gas is injected is formed. A plurality of fins 122 for raising / lowering the substrate 127 may be formed along the edge of the base 111.

Adjacent to the base 111, that is, the side of the base 111 is provided with a plurality of movable members that can move in the transverse direction by the motor. A plurality of guides 133 are formed on each of the moving members. The guide 133 should be strong enough to withstand the etching process, for example, a ceramic-based material such as alumina (Al2O3). The guide 133 may be integrally formed with the movable member or may be individually fixed to the moving member.

6 and 7 show two moving members on both sides of the base 111 for convenience of description, but in practice, moving members may be provided on both the left and right sides of the base 111. Of course, the guide 133 is formed on each moving member. As such, when the guide 133 is provided in the upper, lower, left, and right sides of the base 111, the substrate 127 is fixed in all directions by the guide 133, and thus, through the injection hole 119 of the lower electrode 114. The substrate 127 is not shaken even by the injected strong nitrogen gas or helium gas, so that the etching process can be stably performed.

Each of the guides 133 includes a body 133b that is connected to the moving member and stands up, and a stopper 133b that is bent at an end of the body 133b and protrudes into the center region of the substrate 127. The stopper 133b may protrude to such an extent that it does not invade the display area of the substrate 127. When the stopper 133b protrudes too much to invade the display area of the substrate 127, a pattern is not formed on the substrate 127 corresponding to the stopper 133b by the stopper 133b during the etching process. As a result, a pattern defect may lead to a defect in the substrate 127. The body 133b may be integrally formed with the moving member or may be separately assembled and fixed.

The moving member may be movable by a rack pinion method or a hydraulic method. Since the details have already been described above, it will be easily understood with reference to this.

The substrate detection sensor 129 for detecting the position of the substrate 127 is attached to the bottom of the stopper 133b of the guide 133. When the substrate 127 is raised by the plurality of pins 122, the substrate detection sensor 129 detects whether the substrate 127 is in contact with the stopper 133b, so that the substrate 127 is the stopper 133b. ) Generates a signal to stop the operation of raising the plurality of pins 122 by this signal.

Of course, there is no problem in implementing the present invention without the substrate detection sensor 129. That is, when the substrate sensor 129 is not present, the height between the base 111 and the stopper 133b of the guide 133 may be known in advance, and the pin 122 may be raised only by the height. However, in this case, there is a possibility that a predetermined gap exists between the substrate 127 and the stopper 133b lifted by the fin 122, so that the reaction product generated during the process flows into the gap to lower the lower electrode 114. The possibility of contamination cannot be ruled out.

Nevertheless, it is clear that the object of the present invention can be sufficiently achieved by the present invention including the guide 133 and the substrate 127 spaced apart from the lower electrode 114 and fixed by the guide 133. However, in order to make the present invention more clear and valuable, it may be more preferable that the substrate detection sensor 129 is provided.

The operation method of the etching apparatus of the present invention configured as described above will be described.

Before the substrate 127 is seated on the lower substrate 127, the moving member having the guide 133 is moved away from the base 111 in the lateral direction and stopped.

In this state, when the substrate 127 enters from the outside, the plurality of pins 122 formed at the edge of the base 111 are raised upward.

After the substrate 127 is seated on the plurality of pins 122, the movable member having the guide 133 is moved laterally into the base 111. In this case, the guide 133 is moved to the extent that the edge of the substrate 127 overlaps the stopper 133b of the guide 133 by a predetermined area.

Next, the plurality of pins 122 are raised again, thereby raising the substrate 127 to the position of the stopper 133b of the guide 133. In this case, when the substrate detection sensor 129 attached to the bottom of the stopper 133b senses the position of the substrate 127 and reaches the position where the substrate 127 contacts the stopper 133b, Signal is generated, and the operation of raising the plurality of pins 122 is stopped by this signal.

Subsequently, nitrogen (N 2) gas is strongly injected through the injection hole 119 of the lower electrode 114, and the center region of the substrate 127 is supported by the nitrogen gas. If the nitrogen gas is not strongly injected, the center region of the substrate 127 sags downward. Accordingly, the flatness of the substrate 127 may not be maintained, and thus, a non-uniform pattern may be formed during the etching process. The pressure of the nitrogen gas is preferably such that the substrate 127 is maintained at a uniform flatness. However, the optimum pressure of the nitrogen gas may be varied by the size of the substrate 127, the weight of the substrate 127, the shape of the guide 133, and the shape of the stopper 133b of the guide 133. The pressure of nitrogen gas cannot be determined.

Accordingly, the substrate 127 may be cooled by the nitrogen (N2) gas and the central region of the substrate 127 may be supported.

Although nitrogen gas is injected through the injection hole 119 as described above, helium gas may be used in addition to nitrogen gas.

An etching process is performed while the substrate 127 is spaced apart from the lower electrode 114.

When the etching process is completed, the injection of nitrogen gas injected into the injection hole 119 is stopped, the plurality of fins 122 are lowered, and the moving member having the guide 133 is moved in the horizontal direction outside. That is, the moving member having the guide 133 is moved to a position away from the base 111 which is the original position.

Therefore, in the second embodiment of the present invention, since strong nitrogen gas is injected between the substrate 127 and the lower electrode 114, the reaction product generated during the etching process is not attached to the lower electrode 114 by the nitrogen gas. Therefore, the contamination of the lower electrode 114 can be prevented.

In addition, according to the second embodiment of the present invention, not only the lower electrode 114 is not contaminated, but the substrate 127 is spaced apart from the lower electrode 114 so that the lower electrode 114 does not come into contact with the lower electrode 114 at all. The stain is not generated on the bottom surface of the substrate 127 by the 114, so that contamination of the substrate 127 may be prevented.

In addition, in the second embodiment of the present invention, since the substrate 127 is not in contact with the lower electrode 114 at all, the substrate 127 is spaced apart from the lower electrode 114 and a strong nitrogen gas is supplied therebetween. Since all bottom surfaces of 127 are uniformly cooled by nitrogen gas, uniform temperature control is possible, so that the etching process efficiency is improved, and a higher quality etching process is possible.

As described above, according to the present invention, adhesion of the reaction product to the lower electrode is blocked by the strong gas injected between the substrate and the lower electrode, thereby preventing contamination of the lower electrode.

According to the present invention, the substrate is spaced apart from the lower electrode so as to fundamentally block the contact between the substrate and the lower electrode, thereby preventing contamination of the bottom surface of the substrate due to contact with the lower electrode.

According to the present invention, since the substrate is not in contact with the lower electrode at all, a uniform gas injection is possible on the entire bottom surface of the substrate, thereby enabling a high quality etching process by uniform temperature control of the substrate.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

Claims (23)

An etching apparatus for etching a substrate, Base; An electrode fixed on the base; A plurality of guides fixing the substrate spaced apart from the electrode; And A plurality of pins installed along an edge of the base to fix the back of the substrate and to raise / lower the substrate, The plurality of guides, A plurality of first guides disposed on the left side of the substrate and a plurality of second guides disposed on the right side of the substrate, The first and second guides are movable to move away from or close to each other, Each of the first and second guides, Body; A moving member bent at the lower end of the body and inserted into the base portion; And A stopper that is bent at an upper end of the body and protrudes into a central region of the substrate, The movable member is an etching apparatus movable by a rack pinion method or a hydraulic method. The etching apparatus of claim 1, wherein a plurality of injection holes are formed in the electrode to inject gas. The etching apparatus of claim 2, wherein the gas is one of nitrogen gas and helium gas. The etching apparatus of claim 2, wherein the pressure of the gas is adjusted such that the central region of the substrate has the same flatness as the edge region. delete The etching apparatus of claim 1, wherein the moving member and the stopper are integrally formed with the body. The etching apparatus of claim 1, wherein the stopper fixes the substrate spaced apart from the electrode. An etching apparatus for etching a substrate, Base; An electrode fixed on the base; A plurality of guides fixing the substrate spaced apart from the electrode; A plurality of pins installed along an edge of the base to fix the back of the substrate and to raise / lower the substrate; A plurality of moving members disposed on the side of the base; And A plurality of guides including a body connected to the moving member and standing up, and a stopper that is bent at an end of the body and protrudes into a central region of the substrate, The plurality of guides, A plurality of first guides disposed on the left side of the substrate and a plurality of second guides disposed on the right side of the substrate, The first and second guides are movable to move away from or close to each other by the moving member, The moving member is an etching apparatus, characterized in that for moving the plurality of guides by a rack pinion method or a hydraulic method. The etching apparatus of claim 8, wherein the plurality of guides are integrally formed with the moving members. The etching apparatus according to claim 8, wherein the plurality of guides are assembled and fixed to each of the movable members individually. delete delete The etching apparatus of claim 1, wherein the guide is made of a ceramic-based material. The etching apparatus of claim 1, further comprising a sensing sensor installed at a bottom of the stopper of the guide to sense a position of the substrate. The etching apparatus of claim 14, wherein the raising of the substrate is stopped when the substrate is detected by the detection sensor. Base; An electrode fixed on the base; A plurality of guides fixing the substrate spaced apart from the electrode; A plurality of pins installed along an edge of the base to fix the back of the substrate and to raise / lower the substrate; And a sensing sensor installed at the guide to sense a position of the substrate, wherein the plurality of guides include a plurality of first guides disposed on the left side of the substrate and a plurality of second guides disposed on the right side of the substrate. And the first and second guides are movable to move away from or close to each other, each of the first and second guides comprising: a body; A moving member bent at the lower end of the body and inserted into the base portion; And a stopper that is bent at an upper end of the body and protrudes into a central region of the substrate, wherein the movable member is a rack pinion type or an hydraulic type movable apparatus. The pin is raised to a first height from the electrode to seat the substrate; Moving in the lateral direction such that the first and second guides are close to each other; The pin is raised from the first height to a second height; Injecting the gas through the injection hole; And Etching the substrate Method of operation of an etching apparatus comprising a. The method of claim 16, wherein the second height is a height from the electrode to the detection sensor. 18. The method of claim 17, wherein the second height is at least greater than the first height. The method of claim 16, wherein the center region of the substrate is supported by the gas and the front surface of the substrate is uniformly cooled. The method of claim 16, further comprising: stopping the injection of the gas after the etching process is completed; The pin is lowered to the first height; And And moving the first and second guides laterally away from each other. delete delete A method of manufacturing a display device, comprising: forming a pattern by the etching device according to claim 1.

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