KR101335116B1 - Deposition apparatus - Google Patents

Abstract

The present invention relates to a vapor deposition apparatus used in a vapor deposition method for forming a thin film on a substrate such as a wafer. In particular, the present invention relates to a deposition apparatus in which substrate throughput is improved and at the same time stable and precise process control is possible and the maintenance and repair costs of the apparatus are reduced.

Description

[0001]

The present invention relates to a vapor deposition apparatus used in a vapor deposition method for forming a thin film on a substrate such as a wafer. In particular, the present invention relates to a deposition apparatus in which substrate throughput is improved and at the same time stable and precise process control is possible and the maintenance and repair costs of the apparatus are reduced.

As a deposition method for forming a thin film on a substrate such as a semiconductor wafer (hereinafter referred to as a substrate), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), atomic layer Techniques such as atomic layer deposition (ALD) and plasma enhanced atomic layer deposition (PEALD) have been used.

1 illustrates an embodiment of an atomic layer deposition method among substrate deposition methods. As shown in FIG. 1, the atomic layer deposition method injects a raw material gas containing a raw material such as trimethyl aluminum (TMA) onto a substrate, and then discharges an inert purge gas such as argon (Ar) and exhausts unreacted materials. Adsorbs a single molecular layer onto the substrate, and injects a reaction gas containing a reactant such as ozone (O ₃ ) that reacts with the raw material, followed by inert purge gas injection and unreacted material / by-product exhaust through a single atom. The layer (Al-O) will be formed.

The deposition apparatus used in the conventional atomic layer deposition method is a single type that deposits one substrate inside the reaction chamber to perform deposition, and a plurality of substrates spaced in a vertical direction with respect to the ground in the reaction chamber. A batch type for simultaneously performing deposition on the substrate, a semi-batch type in which deposition on each of a plurality of substrates mounted on the susceptor in the reaction chamber is sequentially or simultaneously performed, and a kind of the semi-batch type There is a track type in which the substrate conveying means is composed of a conveying belt, a guide rail, and the like.

The single type has the advantage of precisely controlling the composition, properties, and the like of the thin film formed on the substrate processing surface by treating the substrates one by one, but has a problem in that the substrate throughput is very low. On the other hand, in the batch type, the substrate throughput is improved by simultaneously processing a plurality of substrates, but it is difficult to precisely control the composition, characteristics, and the like of the thin film.

The semi-batch type, which combines the advantages and disadvantages of the single type and the batch type, has improved substrate throughput than the single type and enables precise control of the thin film than the batch type, but still has insufficient problem of substrate throughput.

On the other hand, Figure 2 shows a conventional track type deposition apparatus. The track type deposition apparatus has the advantage that the substrate throughput is improved over other conventional semibatch types. However, as shown in FIG. 2, the conventional track type deposition apparatus has a structure in which a belt 310 constituting its track is disposed horizontally with the ground and a substrate susceptor 320 is placed and fixed on the belt 310. Since the load of the susceptor 320 and the substrate (W) is added to the belt 310, a process error and an accident may occur due to a change in the tension of the belt 310, and furthermore, the belt 310 There is a problem that the life of the shortening.

Therefore, there is a need for a deposition apparatus that can improve substrate throughput, at the same time enable stable and precise process control, and reduce maintenance and repair costs of the apparatus.

It is an object of the present invention to provide a deposition apparatus capable of improving substrate throughput and at the same time allowing stable and precise process control.

It is also an object of the present invention to provide a deposition apparatus in which the maintenance / maintenance cost of the apparatus is reduced.

In order to solve the above problems,

Reaction chamber; At least one gas supply unit disposed in the reaction chamber and supplying a process gas to a substrate processing surface; A conveying belt disposed inside the reaction chamber and wound around a pulley connected to two axes disposed perpendicular to the ground; A guide rail disposed inside the reaction chamber and outside the belt; And at least one substrate mounting portion having a susceptor on which a substrate is seated and circulated along the guide rail by driving the transfer belt; The substrate mounting part is transported so that the processing surface of the substrate seated on the susceptor passes while facing the gas supply surface of the gas supply part.

Here, the height is adjustable by the susceptor is raised and lowered, provides a deposition apparatus.

The substrate mounting part may include a susceptor, a first guide block coupled to the susceptor, a carriage moving along the guide rail, and a second guide block coupled to the carriage, wherein the first guide block is a protrusion. The second guide block may include a groove portion into which the protrusion may be inserted, and the first guide block may move up or down while sliding while the protrusion is inserted into and connected to the groove of the second guide block. It is possible to provide a vapor deposition apparatus, which is characterized by the above-mentioned.

The first guide block may include a susceptor height adjusting bolt which is disposed perpendicular to the ground and whose lower end is supported by the carriage, and which has the female thread corresponding to the male thread of the bolt on the joint surface thereof. It provides a deposition apparatus, characterized in that it comprises an insertion hole.

Furthermore, the first guide block and the second guide block each include fasteners facing each other, and the auxiliary bolt is inserted into the fastener so that the first guide block is firmly coupled to the second guide block in a state where the height is adjusted. It is characterized by providing a vapor deposition apparatus.

In addition, the carriage includes a connection member, the transport belt includes a plurality of connection rings spaced at a predetermined interval, the connection member is inserted into the connection ring, the substrate mounting portion to the transport belt Provided, characterized in that connected, the deposition apparatus.

The carriage includes a plurality of wheels under the carriage, the guide rail includes a plurality of guide members, and the wheels rotate in contact with the guide member. .

Here, the guide member includes a protrusion, and the wheel of the carriage provides a deposition apparatus, characterized in that it comprises a groove portion into which the protrusion of the guide member is inserted.

On the other hand, the susceptor provides a deposition apparatus, characterized in that a flow path is formed on the opposite surface of the other susceptor adjacent to the susceptor is bent at least once by the space between the projections.

On the other hand, the substrate mounting surface circumference of the susceptor, there is provided a deposition apparatus, characterized in that there is a guide inclined surface for stable and accurate mounting of the substrate.

The present invention also provides a deposition apparatus, further comprising a sensor capable of sensing the leveling of the substrate seated on the susceptor.

Here, the sensor is an optical sensor that detects the leveling of the substrate by measuring the distance at each point by irradiating / receiving light to any point on the substrate surface, provides a deposition apparatus.

The deposition apparatus according to the present invention exhibits an excellent effect of improving the substrate throughput compared with other conventional semibatch types by adopting the track type.

In addition, the deposition apparatus according to the present invention exhibits an excellent effect that stable and precise process control is possible by improving the substrate transfer means.

Further, the deposition apparatus according to the present invention reduces the maintenance and repair costs of the apparatus by extending the life of the belt constituting the track and improving the film formation of the inner wall of the reaction chamber other than the substrate processing surface by improving the substrate transfer means. Exhibits an excellent effect.

1 illustrates an embodiment of a process of atomic layer deposition.
2 shows a conventional track type deposition apparatus.
Figure 3 shows an embodiment of a track type deposition apparatus according to the present invention.
Figure 4 shows an embodiment of the substrate mounting portion introduced into the deposition apparatus according to the present invention.
5 is an exploded perspective view of the substrate mounting portion shown in FIG. 4.
FIG. 6 illustrates a cross-sectional view of the substrate seating surface in the substrate mounting portion illustrated in FIG. 4.
FIG. 7 illustrates a cross-sectional view of a flow path formed by protrusions of adjacent susceptors in the substrate mounting portion illustrated in FIG. 4.
FIG. 8 illustrates embodiments of a method in which the first guide block and the second guide block are connected to each other in the substrate mounting part illustrated in FIG. 5.
9 is an enlarged view of the right side of the substrate mounting portion shown in FIG. 4.
10 illustrates an embodiment of a belt constituting the substrate transfer means, a connecting ring attached thereto, and a guide rail in the deposition apparatus according to the present invention.
FIG. 11 is a view illustrating a state in which the substrate mounting portion illustrated in FIG. 4 is connected to the connecting ring illustrated in FIG. 10.
FIG. 12 is a sectional view taken along line AA ′ of FIG. 11.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. Like numbers refer to like elements throughout.

Figure 3 shows an embodiment of a track type deposition apparatus according to the present invention. The track type deposition apparatus belongs to a semi-batch type deposition apparatus in a broad sense, but has a feature that the substrate transfer unit is composed of a substrate transfer belt, a guide rail, and the like described later.

3A is a plan view showing the overall configuration of a track type deposition apparatus 1000 according to the present invention.

As shown in FIG. 3A, the track type deposition apparatus 1000 includes a reaction chamber 100 that performs a process such as a deposition operation on a substrate, a load lock chamber 700 capable of switching to a vacuum or atmospheric pressure state, and deposition. A plurality of boats 810 on which a substrate to be loaded is loaded, a plurality of boats 820 for loading a substrate on which deposition is completed, and a substrate pull-out that pulls in and out a substrate from the load lock chamber 700 to the reaction chamber 100 The unit 900 is provided.

When a substrate is supplied to the reaction chamber 100, a first robot arm (not shown) inside the load lock chamber 700 transfers the substrate from the boat 810 into the load lock chamber 700. Subsequently, the load lock chamber 700 is switched to a vacuum state, and the second robot arm 910 of the substrate inlet / outlet unit 900 receives the substrate and supplies the substrate to the reaction chamber 100. When the substrate is taken out from the reaction chamber 100, the process proceeds in the reverse order.

3B is a perspective view showing the inside of the chamber body 130 by separating the chamber lid 110 in the reaction chamber 100. As shown in FIG.

The reaction chamber 100 accommodates a substrate therein and provides a space for providing various components for performing a deposition operation or the like on the substrate. Furthermore, it provides an environment in which a substrate processing operation such as a deposition operation or the like can be performed by keeping the inside in a vacuum state by a vacuum equipment such as a pump (not shown) for exhausting air inside.

The reaction chamber 100 includes a chamber body 130 having an upper opening and a chamber lid 110 for opening and closing an opened upper portion of the chamber body 130. One side of the chamber body 130 has an opening 134 through which the substrate is drawn into and out of the reaction chamber 100 and a connector 132 that seals the substrate inlet and outlet 900 and the opening 134.

The openings 134 may be provided in the chamber body 130 in pairs. As shown in FIG. 3A, two reaction chambers 100 are provided in the deposition apparatus 1000 to connect two reaction chambers 100 to one substrate drawing-out unit 900. To increase. That is, when the reaction chamber 100 is manufactured regardless of the direction of the reaction chamber 100 connected to the substrate inlet / outlet unit 900, a pair of openings 134 are provided to improve the productivity. Further, when it is necessary to change the connecting portion of the reaction chamber 100 while the reaction chamber 100 is connected to the substrate inlet / outlet portion 900, the substrate inlet / outlet portion 900 may be provided in the other opening portion So that compatibility can be improved.

In the present invention, the substrate inlet / outlet unit 900 is connected to the reaction chamber 100 to draw the substrate into the reaction chamber 100 or to draw the substrate after the deposition to the outside of the reaction chamber 100 . The substrate on which the deposition is completed is drawn out through the opening 134 by the second robot arm 910 of the substrate inlet / outlet 900 when the substrate loading part 150 moves by the transfer of the substrate as described later. The substrate requiring deposition is supplied to the substrate mounting portion 150 in the reaction chamber 100 through the opening portion 134 by the second robot arm 910 of the substrate inlet /

On the other hand, the chamber lead 110 of the reaction chamber 100 is provided with a gas supply unit 200 for supplying a process gas and purge gas, such as source gas, reaction gas, which will be described in detail later.

As shown in FIG. 3B, the reaction chamber 100 includes a substrate mounting part 150 on which a substrate to be processed is mounted, and a substrate transferring part for transferring the substrate mounting part 150 along a predetermined path. Is a pulley 182 and 184 respectively connected to two shafts, the pulleys 182 and 184 are wound around and connected to the substrate mounting part 150 to transfer the substrate mounting part 150 by driving by rotation of the shaft and the pulley. It may include a guide rail 180 for guiding the transport path of the belt 190 and the substrate mounting portion 150.

Specifically, at least one of the two shafts receives power from a driving motor (not shown) to rotate the pulleys 182 and 184 connected thereto, thereby driving the transport belt 190 wound around the pulleys 182 and 184. As a result, the substrate mounting portion 190 connected to the transport belt 190 is circulated along the guide rail 180 by driving the transport belt 190.

Accordingly, the movement of the substrate mounting unit 150 with respect to the gas supply unit 200 includes a curved movement and a linear movement, and the processing surface of the substrate seated on the substrate mounting unit 150 is a gas supply surface of the gas supply unit 200. By passing through the deposition process is performed. Here, the gas supply unit 200 may be installed in the linear movement section and / or the curved movement section of the substrate mounting portion 150, preferably may be installed in the linear movement section.

A plurality of metal heaters 170 may be disposed under the transfer path of the substrate loading unit 150 in the reaction chamber 100. The substrate heating unit 170 may be indirectly heated by the metal heater 170, The deposited substrate is subjected to a temperature condition for performing the deposition process.

Figure 3c shows a cross-sectional view of the slit-type gas supply unit 200 introduced into the deposition apparatus according to the present invention. The gas supply unit 200 includes a raw material gas slit 210, a first exhaust passage 250, a first purge gas slit 220, a reactive gas slit 230, and a first gas downstream from an upstream to a downstream side of a substrate transfer direction. It may include a second exhaust passage 260 and the second purge gas slit 240. Here, the source gas slit 210, the first exhaust passage 250 and the first and second purge gas slits 220 and 240 are each supplied with a gas from a separate gas supply source to supply gas to the substrate processing surface through the slit. The first and second exhaust passages 250 and 260 are connected to separate vacuum pumps and the like to perform exhaust by pumping the vacuum pumps.

The width of each of the source gas slit 210, the reaction gas slit 230, and the first and second purge gas slits 220 and 240 constituting the gas supply unit 200 is equal to or slightly larger than the diameter of the substrate seated on the susceptor. It is preferable. In addition, the lowermost end of each of the source gas slit 210, the reaction gas slit 230, and the first and second purge gas slits 220 and 240 constituting the gas supply unit 200 and the processing surface of the substrate are spaced about 1 to 10 mm apart. It is preferable. In particular, the distance between the bottom end of the source gas slit 210 and the reaction gas slit 230 and the substrate processing surface is preferably minimized.

The deposition process by the deposition apparatus having the slit-type gas supply unit 200 shown in FIG. 3C provides a single molecule layer of the chemically adsorbed raw material by supplying the raw material from the raw material gas slit 210 to the processing surface of the substrate. Forming, exhausting the unreacted raw material through the first exhaust passage 250, and supplying the remaining unreacted raw material to the processing surface of the substrate from the first purge gas slit 220 to supply the remaining unreacted raw material to the first exhaust cylinder. Exhausting through the furnace 250, forming a single atomic layer by supplying reactants from the reaction gas slit 230 to the processing surface of the substrate, and unreacted reactants and by-products through the second exhaust passage 260. And exhausting the remaining unreacted reactants and by-products through the second exhaust passage 260 by supplying an inert gas from the second purge gas slit 240 to the processing surface of the substrate. Can.

Further, in another embodiment of the present invention, based on the transport direction of the substrate, upstream of the source gas slit 210, between the first purge gas slit 220 and the reaction gas slit 230, the second purge gas slit By disposing an additional exhaust passage downstream of 240 or by further disposing a purge gas slit upstream of the source gas slit 210, a mixture of source gas and reactant gas or source gas and reactant gas are discharged out of the treatment region. Waste can be further suppressed, and the uniformity of the formed thin film can be improved by removing fine dust or the like present on the substrate processing surface before performing the deposition process.

4 shows an embodiment of the substrate mounting portion 150 introduced into the deposition apparatus according to the present invention, and FIG. 5 shows an exploded perspective view of the substrate mounting portion 150 shown in FIG. In the present invention, the substrate is seated on the substrate mounting surface 157 of the susceptor 151 constituting the substrate mounting portion 150, the carriage 152 constituting the substrate mounting portion 150 is the susceptor ( By circulating along the rail 180 to be described later by the driving of the belt 190 to be described later in a state connected to the 151, the substrate seated on the susceptor 151 as a result of the circular transfer.

As a result, the substrate seated on the substrate seating surface 157 of the susceptor 151 passes through the gas supply surface of the gas supply unit 200 provided in the reaction chamber 100 of the deposition apparatus to face the gas supply unit ( 200 is supplied by the gas supplied from.

The diameter of the substrate seating surface 157 provided in the susceptor 151 may be equal to or slightly larger than the diameter of the substrate. In addition, as illustrated in FIG. 6, a guide inclined surface may be formed at a circumference of the substrate seating surface 157. The substrate may be accurately and stably seated on the substrate seating surface 157 by the guide inclined surface.

Furthermore, a sensor (not shown) may be provided on the substrate seating surface 157 to check whether the substrate is correctly seated on the substrate seating surface 157, that is, leveling the substrate. For example, the sensor may be a three-point optical sensor that can determine whether the substrate is correctly seated by measuring the distance of each point by irradiating / receiving light to any three points on the substrate processing surface.

In addition, as shown in FIG. 7, the susceptor 151 may include protrusions 158 on opposite surfaces of adjacent susceptors, and protrusions 158 formed on opposite surfaces of adjacent susceptors 151. They form a flow path that bends one or more times. The curved flow path forms a flow path resistance that suppresses the process gas supplied to the substrate processing surface seated on the susceptor 151 to be discharged downward.

As a result, the waste of the process gas can be suppressed, the time for which the process gas stays on the substrate processing surface can be increased, and the deposition efficiency can be improved, and formation of a film on the inner wall of the chamber other than the substrate processing surface can be suppressed. .

As shown in FIGS. 4 and 5, the susceptor 151 and the carriage 152 constituting the substrate mounting part 150 according to the present invention are connected by, for example, first and second guide blocks 153 and 154. It can have Specifically, the susceptor 151 is coupled to the first guide block 153, the carriage 152 is coupled to the second guide block 154 by bolts, and the protrusion of the first guide block 153 is formed. 2 may be connected by sliding and being inserted in a state of being fitted into the groove portion of the guide block 154.

The protrusion may be formed in the second guide block 154, the groove may be formed in the first guide block 153, and the protrusion and the groove may have various shapes. 8A to 8C illustrate an embodiment in which the protrusion of the first guide block 153 fits into the groove of the second guide block 154. In particular, the method illustrated in FIG. 6A is called a dovetail type, and the dovetail of the dovetail protrusion of the first guide block 153 and the groove of the second guide block 154 are dovetailed. Home is called.

In the present invention, the susceptor 151 may be raised and lowered. For example, as shown in FIG. 9, the first guide block 153 may be provided with a susceptor height adjusting bolt 155. Specifically, the susceptor height adjustment bolt 155 is inserted into the bolt insertion hole 159 of the first guide block 153 and the lower end is supported by the carriage 152 or the connection member 156 coupled to the carriage. It can have a structure. In the bolt insertion hole 159, the joint surface with the susceptor height adjustment bolt 155 is formed with a female screw corresponding to the male screw of the bolt 155.

Here, when the susceptor height adjustment bolt 155 is rotated while the lower end thereof is supported by the carriage 152 or the connection member 156 coupled to the carriage, the susceptor height adjustment bolt 155 according to the rotation direction of the bolt 155 The first guide block 153 is raised or lowered while sliding with the protrusion thereof inserted into the groove of the second guide block 154, and as a result, the susceptor 151 coupled to the first guide block 153. ) Is raised or lowered. That is, the height of the susceptor 151 may be adjusted by the rotation of the susceptor height adjusting bolt 155.

In addition, the first and second guide blocks 153 and 154 may have fasteners facing each other, and an auxiliary bolt may be inserted into the fasteners. As a result, the susceptor 151 and the first guide block 153 whose height are adjusted may be more firmly fixed to the second guide block 154. By adjusting the height of the susceptor 151, the gap between the gas supply part 200 and the substrate processing surface mounted on the susceptor 151 is precisely adjusted to improve deposition efficiency and to precisely control the thin film.

In addition, the carriage 152 is coupled to the connection member 156 for connection with the belt 190 to be described later. The connection member 156 has a protrusion inserted into and connected to the connection ring 191 of the belt 190 to be described later. Thus, the carriage 152 is circulated by the drive of the belt 190 and the connection of the connecting ring 191 and the connecting member 156.

FIG. 10 illustrates an embodiment of a transport belt 190 shown in FIG. 3B, a connecting ring 191 coupled thereto, and a guide rail 180 for guiding the carriage 152. The material of the belt 190 may be metal, fiber, or the like, and the material of the connecting ring 191 may be metal, plastic, or the like. In addition, the material of the guide rail 180 may be metal or the like.

FIG. 11 is a view illustrating the connection member 156 of the carriage 152 connected to the connection ring 191 of the belt 190, and FIG. 12 is a cross-sectional view taken along the AA ′ broken line of FIG. 11. . The shape of the connecting ring 191 of the belt 190 is not particularly limited as long as it has a groove to which the protrusion of the connecting member 156 is inserted.

As shown in FIG. 12, one or more, preferably four wheels 160 that rotate in a state supported by the guide member 181 of the guide rail 180 are provided below the carriage 152. For example, the guide member 181 of the rail 180 includes a protrusion and the one or more wheels 160 of the carriage 152 include a groove portion into which the protrusion of the guide member 181 is inserted. On the other hand, the wheel 160 has a protrusion and the guide member 181 may include a groove that is engaged with the protrusion of the wheel 160 is inserted.

That is, the carriage 152 is guided along the rail 180 by the guide member 181 and the wheel 160 and is connected to the belt 190 by the connecting member 156 and the connecting ring 191. It is circularly conveyed by the drive of the belt 190. As a result, the deposition apparatus according to the present invention has a structure in which loads such as the susceptor 151 and the carriage 152 are not added to the belt 190, unlike the conventional track type deposition apparatus, so that the deposition apparatus is transported for a long time. Process error due to the tension change of the belt for 190 can be prevented and the life of the belt 190 can be extended.

While the present invention has been particularly shown and described with reference to preferred embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the following claims. . It is therefore to be understood that the modified embodiments are included in the technical scope of the present invention if they basically include elements of the claims of the present invention.

1000: deposition apparatus 100: reaction chamber
150: substrate mounting part 200: gas supply part

Claims (12)

A reaction chamber;
At least one gas supply unit disposed in the reaction chamber and supplying a process gas to a substrate processing surface;
A conveying belt disposed inside the reaction chamber and wound around a pulley connected to two shafts, respectively;
A guide rail disposed inside the reaction chamber and outside the belt; And
Two substrates having a susceptor on which the substrate is seated and circulated along the guide rail by driving the transfer belt so that the processing surface of the substrate seated on the susceptor passes while facing the gas supply surface of the gas supply part; Including the above substrate mounting portion,
The susceptor has a protrusion on the opposite surface of the other susceptor adjacent to the flow path is formed one or more times by the space between the protrusions is formed, the flow path is that the process gas is discharged downward through the flow path A vapor deposition apparatus characterized by forming a flow path resistance to be suppressed. The method of claim 1,
The height adjustment is possible by the susceptor is raised and lowered, evaporation apparatus. 3. The method of claim 2,
The substrate mounting part includes a susceptor, a first guide block coupled to the susceptor, a carriage moving along the guide rail, and a second guide block coupled to the carriage,
The first guide block includes a protrusion, the second guide block includes a groove portion into which the protrusion can be inserted,
The first guide block is a deposition apparatus, it characterized in that the protrusion can be lifted or lowered while being inserted into the groove portion of the second guide block connected to the sliding. The method of claim 3,
The first guide block has a bolt insertion hole which is disposed perpendicular to the ground and has a susceptor height adjusting bolt whose lower end is supported by the carriage, and which has the bolt inserted therein and a female thread corresponding to the male thread of the bolt on the joint surface thereof. Deposition apparatus comprising a. The method according to claim 3 or 4,
Each of the first guide block and the second guide block includes fasteners facing each other, and the auxiliary bolt is inserted into the fastener so that the first guide block is firmly coupled to the second guide block in a height-adjusted state. The vapor deposition apparatus. The method according to claim 3 or 4,
The carriage includes a connection member, and the transport belt includes a plurality of connection rings spaced apart at regular intervals, and the substrate mounting part is connected to the transport belt by inserting the connection member into the connection ring. Deposition apparatus, characterized in that. The method according to claim 3 or 4,
And the carriage includes a plurality of wheels at the bottom thereof, the guide rail includes a plurality of guide members, and the wheels rotate in contact with the guide member. The method of claim 7, wherein
And the guide member includes a protrusion, and the wheel of the carriage includes a groove portion into which the protrusion of the guide member is inserted. delete 5. The method according to any one of claims 1 to 4,
And a guide inclined surface on the substrate seating surface circumference of the susceptor for stably and accurately seating the substrate. 5. The method according to any one of claims 1 to 4,
And a sensor capable of sensing leveling of the substrate seated on the susceptor. 12. The method of claim 11,
And the sensor is an optical sensor for sensing the leveling of the substrate by irradiating / receiving light at an arbitrary point on the surface of the substrate and measuring the distance at each point.

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