KR101328427B1 - Complex conductive thin film using metal nano wire and cnt, method of manufacturing thereof - Google Patents

Abstract

The present invention relates to a complex conductive thin film using a metal nano wire or a carbon nano tube and a manufacturing method thereof and the purpose of the present invention is to improve conductivity and light transmission degree at the same time. The complex conductive thin film according to the present invention comprises a substrate, a conductive thin film, and a porous nano thin film structure layer. The conductive thin film is formed on the substrate and comprises the metal nano wire or the carbon nano tube and the nano thin film structure layer comprises a silicon oxide in order to cover the conductive thin film. [Reference numerals] (S31) Prepare a substrate;(S33) Process surface;(S35) Conductive thin film is formed on the substrate and comprises the metal nano wire or the carbon nano tube;(S37) Porous nano thin film structure layer including silicon oxide for being immersed in the conductive thin film is formed

Description

Complex conductive thin film using metal nano wire and CNT, method of manufacturing description

The present invention relates to a conductive thin film and a method for manufacturing the same, and more particularly to a composite conductive thin film using a metal nanowire or carbon nanotubes and a method for manufacturing the same.

 The conductive thin film composed of metal nanowires or carbon nanotubes refers to a conductive film having conductivity by forming a network structure by forming a network structure in a nano structure in the form of a wire or a tube. Such conductive thin films are widely used in various fields such as transparent electrodes, surface heating elements, electrostatic control and absorbents, electromagnetic shielding films, heat radiation materials, transistors, and sensors.

 Conventionally, a conductive thin film composed of metal nanowires or carbon nanotubes has an advantage of being able to be formed on a substrate by a simple solution process. However, the conductive thin film is not sufficiently excellent in electrical conductivity and has low light transmittance.

In addition, in the case of a conductive thin film composed of metal nanowires, there is a disadvantage in that contact resistance between metal nanowires is high and it is difficult to secure uniformity of electrical conductivity characteristics.

In addition, in the case of the conductive thin film composed of carbon nanotubes, there is a disadvantage that the conductivity is relatively low and the light transmittance is low.

Accordingly, an object of the present invention is to provide a composite conductive thin film using metal nanowires or carbon nanotubes and a method for manufacturing the same which can improve electrical conductivity and light transmittance at the same time.

In order to achieve the above object, the present invention provides a substrate, a conductive thin film formed on the substrate and including a metal nanowire or carbon nanotube, and a porous nano thin film structure formed to cover the conductive thin film and comprising silicon oxide It provides a composite conductive thin film comprising a layer.

In the composite conductive thin film according to the present invention, the metal nanowires may include silver nanowires or copper nanowires having a diameter of 10 to 100 nm and a length of 10 to 100 μm.

In the composite conductive thin film according to the present invention, the carbon nanotubes may have a diameter of 1 ~ 30nm, length of 300nm ~ 100㎛.

In the composite conductive thin film according to the present invention, the nano thin film structure layer may be formed to a thickness of 30 ~ 150nm using a spherical or granular silicon oxide of 10 ~ 100nm size.

In the composite conductive thin film according to the present invention, when the conductive thin film is formed of metal nanowires, the nano thin film structure layer may be formed to a thickness of 50 ~ 120nm. When the conductive thin film is formed of carbon nanotubes, the nano thin film structure layer may be formed to a thickness of 70 ~ 120nm. When the conductive thin film is formed of metal nanowires and carbon nanotubes, the nano thin film structure layer may be formed to a thickness of 70 ~ 150nm.

In the composite conductive thin film according to the present invention, the nano thin film structure layer may be formed to be impregnated in the conductive thin film or to cover the conductive thin film.

In the composite conductive thin film according to the present invention, a portion of the metal nanowire or carbon nanotube may be exposed to the surface of the nano thin film structure layer, or may be located close to the surface of the nano thin film structure layer.

The present invention also provides a composite comprising forming a conductive thin film including metal nanowires or carbon nanotubes on a substrate, and forming a porous nano thin film structure layer including silicon oxide to cover the conductive thin film. Provided are a method for producing a conductive thin film.

In the method of manufacturing a composite conductive thin film according to the present invention, in the forming of the conductive thin film, the conductive thin film is a dip coating, spray coating, spin coating, solution casting It can be formed by dropping, roll coating, gravure coating or bar coating. In the forming of the nano thin film structure layer, the nano thin film structure layer is formed by applying a dispersion solution containing nanoparticles of silicon oxide to the conductive thin film, or after coating the silicon oxide in the sol (sol) state and frozen It can be formed by gelation.

According to the present invention, the porous nano thin film structure layer mainly composed of silicon oxide formed on the conductive thin film formed by using metal nanowires or carbon nanotubes can simultaneously improve the electrical conductivity and the light transmittance of the composite conductive thin film. That is, the nano thin film structure layer can further improve the electrical conductivity of the composite conductive thin film according to the present invention by reducing the contact resistance by densifying the electrical connection structure between the metal nanowires or carbon nanotubes forming the network structure. Since the nano thin film structure layer has a nano-thick porous structure, the light transmittance of the composite conductive thin film according to the present invention can be improved by preventing or reducing the reflection of visible light.

1 is a cross-sectional view showing a composite conductive thin film using metal nanowires or carbon nanotubes according to a first embodiment of the present invention.
2 is a cross-sectional view showing a composite conductive thin film using metal nanowires or carbon nanotubes according to a second embodiment of the present invention.
3 is a flowchart illustrating a method of manufacturing a composite conductive thin film according to an embodiment of the present invention.
Figure 4 is a photograph showing a porous nano thin film structure layer.
5 is a photograph showing a composite conductive thin film in which a nano thin film structure layer is formed on a conductive thin film formed using carbon nanotubes according to a first embodiment of the present invention.

In the following description, only parts necessary for understanding the embodiments of the present invention will be described, and the description of other parts will be omitted so as not to obscure the gist of the present invention.

The terms and words used in the present specification and claims should not be construed as limited to ordinary or dictionary meanings and the inventor is not limited to the meaning of the terms in order to describe his invention in the best way. It should be interpreted as meaning and concept consistent with the technical idea of the present invention. Therefore, the embodiments described in the present specification and the configurations shown in the drawings are merely preferred embodiments of the present invention, and are not intended to represent all of the technical ideas of the present invention, so that various equivalents And variations are possible.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view showing a composite conductive thin film using metal nanowires or carbon nanotubes according to a first embodiment of the present invention. 2 is a cross-sectional view illustrating a composite conductive thin film using metal nanowires or carbon nanotubes according to a second embodiment of the present invention.

1 and 2, the composite conductive thin films 10 and 20 according to the first and second embodiments of the present invention may include a substrate 12, a conductive thin film 14, and a porous nano thin film structure layer 16. It includes. The conductive thin film 14 is formed on the substrate 12 and includes metal nanowires or carbon nanotubes. The nano thin film structure layer 16 has a porous structure and is formed to cover the conductive thin film 14 and includes silicon oxide.

In the composite conductive thin film 10 according to the first embodiment, the conductive thin film 14 is formed in the nano thin film structure layer 16. Metal nanowires or carbon nanotubes positioned on the conductive thin film 14 may be formed to be close to the surface of the nano thin film structure layer 16.

On the other hand, the composite conductive thin film 20 according to the second embodiment has a structure in which a portion of the metal nanowire or carbon nanotube 14 forming the conductive thin film 14 is exposed on the surface of the nano thin film structure layer 16. Have That is, the portion of the metal nanowires or the carbon nanotubes 14a forming the conductive thin film 14 may be exposed to the surface of the nano thin film structure layer 16 or protrude out of the surface.

As described above, in the composite conductive thin films 10 and 20 according to the first and second embodiments, the nano thin film structure layer 16 is an insulating material, but the conductive thin film 14 is close to the surface of the nano thin film structure layer 16 or Since part of the structure is exposed to the outside, it has conductivity and a sheet resistance of 10 to 5000 mW / sq.

Compared with the composite conductive thin film 10 according to the first embodiment, the composite conductive thin film 20 according to the second embodiment includes a portion 14a of the metal nanowires or the carbon nanotubes forming the conductive thin film 14. Except that exposed to the surface of the nano thin film structure layer 16 has the same structure as the composite conductive thin film 10 according to the first embodiment, will be described mainly with respect to the composite conductive thin film 10 according to the first embodiment Is as follows.

The substrate 12 may be any one of glass, quartz, glass wafers, silicon wafers, transparent and opaque plastic substrates, and transparent and opaque polymer films. As a material of the plastic substrate, PET, PC, PEN, PES, PMMA, PI, PEEK, etc. may be used, but is not limited thereto. The substrate 12 may have a thickness of 10 to 10,000 μm.

Moreover, the board | substrate which passed the surface treatment process can also be used as the board | substrate 12, and the board | substrate which did not surface-treat can be used. The surface treatment method of the substrate 12 includes a Piranha solution treatment, an acid treatment, a base treatment, a plasma treatment, an atmospheric plasma treatment, an ozone treatment, a UV treatment, a self assembled monolayer (SAM) treatment, and a polymer or a single molecule. At least one of the coating methods may be used.

The conductive thin film 14 is formed using metal nanowires or carbon nanotubes, and has a network structure. In this case, the conductive thin film 14 may be formed using an aqueous surfactant or a polymeric dispersant, or may be formed using an organic solvent.

For example, when the conductive thin film 14 is formed using an aqueous surfactant, SDBS, SDS, LDS, CTAB, DTAB, PVP, Triton X-series, Brij-series, Tween-series, poly (acrylic acid), polyvinyl Aqueous surfactants, such as alcohol, can be used.

Alternatively, when the conductive thin film 14 is formed using an organic solvent, an organic solvent composed of NMP, DMF, DCE, THF, or the like can be used. Meanwhile, the conductive thin film 14 including the metal nanowires or the carbon nanotubes may be formed by various other methods in addition to the above-described aqueous surfactant or organic solvent.

In the conductive thin film 14, as the metal nanowires, silver nanowires or copper nanowires having a diameter of 10 to 100 nm and a length of 10 to 100 μm may be used. As carbon nanotubes, diameters of 1 to 30 nm and lengths of 300 nm to 100 μm, single-walled carbon nanotubes, functionalized single-walled carbon nanotubes, double-walled carbon nanotubes, functionalized double-walled carbon nanotubes, and multi-walled Carbon nanotubes or functionalized multi-walled carbon nanotubes can be used.

The conductive thin film 14 may be formed by dip coating, spray coating, spin coating, solution casting, dropping, roll coating, or gravure. Coating or bar coating may be used, but is not limited thereto.

The nano thin film structure layer 16 is formed to cover the conductive thin film 14 by being impregnated with the conductive thin film 14. The thickness of the nano thin film structure layer 16 is determined by the thickness of the conductive thin film 14 formed below, but in consideration of the electrical conductivity and the light transmittance, using a silicon oxide in a spherical or grain size of 10 ~ 100nm size 30 It is formed to a thickness of ˜150 nm. In this case, when the size of the silicon oxide is 10 nm or less, silicon oxide may penetrate between the metal nanowires or the carbon nanotubes forming the conductive thin film 14 to increase the contact resistance. When the size of silicon oxide is increased to 10 nm or more, it is difficult for silicon oxide to penetrate between metal nanowires or carbon nanotubes forming the conductive thin film 14, so that the increase in contact resistance due to the penetration of silicon oxide is almost Does not occur. Rather, since the sintering between the silicon oxide has the effect of bringing the carbon nanotubes of the conductive thin film 14 or the conductive particles of the metal nanowires in close contact with each other, the conductivity of the composite conductive thin film 10 can be increased. On the other hand, since the thickness of the nano thin film structure layer 16 is 30 to 150 nm, it is not appropriate to use silicon oxide having a size of 100 nm or more.

The nano thin film structure layer 16 may be formed by applying a dispersion solution containing nanoparticles of silicon oxide to the conductive thin film 14. Alternatively, the nano thin film structure layer 16 may be formed by coating silicon oxide in a sol state and then freezing (gelation). In this case, as the dispersion solution of silicon oxide, an aqueous solution, an alcohol-based organic solvent, or the like may be used, and may be frozen by heating or drying. On the other hand, the nano thin film structure layer 16 may be used by mixing at least one other oxide based on the silicon oxide. In this case, as another oxide, titanium oxide (TiO ₂ ), aluminum oxide (Al ₂ O ₃ ) _, zinc side (ZnO ₂ ), magnesium oxide (MgO), indium tin oxide (ITO), or the like may be used.

As described above, the composite conductive thin films 10 and 20 according to the present embodiment have a porous nano thin film structure layer 16 mainly composed of silicon oxide on the conductive thin film 14 formed by using metal nanowires or carbon nanotubes. By forming, the electrical conductivity and the light transmittance of the composite conductive thin films 10 and 20 can be improved at the same time. That is, the nano thin film structure layer 16 reduces the contact resistance by densifying the electrical connection structure between the metal nanowires or the carbon nanotubes forming the network structure, thereby improving the electrical conductivity of the composite conductive thin films 10 and 20. You can. In addition, since the nano thin film structure layer 16 has a nano-thick porous structure, since the reflection of visible light is prevented or reduced, the light transmittance of the composite conductive thin films 10 and 20 can be improved.

A method of manufacturing the composite conductive thin film 10 according to the first embodiment will be described with reference to FIGS. 1, 3, 4, and 5 as follows. 4 is a photograph showing a porous nano thin film structure layer 16. 5 is a photograph showing a composite conductive thin film in which the nano thin film structure layer 16 is formed on the conductive thin film 14 formed using the carbon nanotubes according to the first embodiment of the present invention.

First, the substrate 12 is prepared in step S31. Next, the surface treatment for the substrate 12 may be selectively performed in step S33. As the surface treatment method of the substrate 12, at least one of pyrana solution treatment, acid treatment, base treatment, plasma treatment, atmospheric pressure plasma treatment, ozone treatment, UV treatment, SAM treatment, and polymer or monomolecular coating method may be employed. Can be used.

Next, in step S35, the conductive thin film 14 is formed on the substrate 12 using metal nanowires or carbon nanotubes. Metal nanowires or carbon nanotubes forming the conductive thin film 14 are formed on the substrate 12 in a network structure. In this case, the conductive thin film 14 may be formed using an aqueous surfactant or a polymeric dispersant, or may be formed using an organic solvent. As the method of forming the conductive thin film 14, dip coating, spray coating, spin coating, solution casting, dropping, roll coating, gravure coating, or bar coating may be used.

In operation S37, the composite conductive thin film 10 according to the first exemplary embodiment may be manufactured by forming the porous nano thin film structure layer 16 including silicon oxide to be impregnated in the conductive thin film 14. The nano thin film structure layer 16 may be formed by applying a dispersion solution containing nanoparticles of silicon oxide to the conductive thin film 14. Alternatively, the nano thin film structure layer 16 may be formed by coating and then freezing silicon oxide in a sol state.

4 illustrates a state in which the nano thin film structure layer 16 is formed on the substrate 12. 5 shows a state in which the nano thin film structure layer 16 is formed on the conductive thin film 14 formed using carbon nanotubes.

Tables 1 to 3 below show changes in resistance and light transmittance according to the thickness of the nano thin film structure layer of the composite conductive thin film according to the present embodiment. In this case, Table 1 used silver nanowires as a material of the conductive thin film. Table 2 used carbon nanotubes as the material of the conductive thin film. Table 3 uses silver nanowires and carbon nanotubes as materials for the conductive thin film. Wherein the oxide is silicon oxide. The sheet resistance and light transmittance of the composite conductive thin film were measured and analyzed while changing the thickness of the nano thin film structure layer. The sheet resistance value was measured using a 4 point probe. Light transmittance was measured using a hazemeter (ISO 13468-1 method).

Referring to Tables 1 to 3, when the thickness of the nano thin film structure layer is 30 nm or less (25 nm), it can be seen that the effect of improving the electrical conductivity and light transmittance due to the formation of the nano thin film structure layer is insignificant. In addition, when the thickness of the nano thin film structure layer is 150 nm, it is possible to confirm the improvement effect of some electrical conductivity and light transmittance, but more than that it can be easily predicted that the improvement effect of the electrical conductivity and light transmittance is insignificant.

Nano thin film structure layer
thickness Sheet Resistance (ohm / sq) Light transmittance (%) oxide
Before coating oxide
After coating After oxide coating
% Change in resistance Before oxide coating After oxide coating After oxide coating
Permeability change 25 nm 29.7 29.8 0 88.3 88.7 0.4 50nm 32.3 27.7 -14 87.9 90.5 2.6 70 nm 35.2 26.6 -24 87.5 91.5 4 100 nm 27.5 24 -13 86.7 90.4 3.7 120 nm 28 26 -7 87.5 89.9 2.4 150 nm 28 29.1  4 87.5 88.8 1.3

The conductive thin film according to Table 1 was coated with a silver nanowire dispersion on a glass substrate to form a transparent conductive thin film. In this case, the silver nanowire dispersion is a product of Cambrios, USA, which is coated on a glass substrate by a bar coating method to form a conductive thin film. The light transmittance and the sheet resistance of the conductive thin film formed of silver nanowires were measured first.

On the conductive thin film formed of silver nanowires, a nano thin film structure layer made of silicon oxide is formed by spin coating. In order to control the thickness of the nano thin film structure layer, the silicon oxide sol solution was diluted with ethanol to adjust the concentration, or the thickness of the nano thin film structure layer was formed at a level of 25 to 150 nm while changing the spin coating speed to 1000 to 5000 rpm. After coating the nano thin film structure layer and dried for 10 minutes on a 130 degree hot plate, light transmittance and sheet resistance were measured.

Measurement Results Referring to Table 1, it can be seen that in the case of using silver nanowires as the material of the conductive thin film, the sheet resistance value and the light transmittance were improved when the thickness of the nano thin film structure layer was 50 to 120 nm. Moreover, when the thickness of the nano thin film structure layer is 50 ~ 120nm, it can be seen that the sheet resistance value is reduced by 7% or more, and the light transmittance is improved by 2.4% or more. That is, when the conductive thin film is formed using silver nanowires, the nano thin film structure layer is preferably formed to a thickness of 50 ~ 120nm.

Nano thin film structure layer
thickness
Sheet Resistance (ohm / sq) Light transmittance (%) oxide
Before coating oxide
After coating % Change in resistance after oxide coating Before oxide coating After oxide coating Permeability change after oxide coating 25 nm 405 410 One 85.5 85.6 0.1 50 nm 423 402 -5 85.2 85.9 0.7 70 nm 435 381 -12 85.1 87.2 2.1 100 nm 422 345 -18 84.6 87.8 3.2 120 nm 431 356 -17 84.5 87.3 2.8 150 nm 442 426  -4 84.7 86.6 1.9

The conductive thin film according to Table 2 was coated with a carbon nanotube dispersion on a glass substrate to form a transparent conductive thin film. The carbon nanotube dispersion was dispersed by ultrasonic method with the addition of surfactant sodium dodecyl bonzene sulfate and purified by centrifugation. The glass substrate was coated with a carbon nanotube dispersion liquid by a spray coating method, and then dipped in distilled water after drying to remove the conductive thin film dispersant to form a conductive thin film of carbon nanotubes. The light transmittance and sheet resistance of the conductive thin film formed of carbon nanotubes were measured first.

A nano thin film structure layer of silicon oxide is formed on the conductive thin film formed of carbon nanotubes by spin coating. In order to control the thickness of the nano thin film structure layer, the silicon oxide sol solution was diluted with ethanol to adjust the concentration, or the thickness of the nano thin film structure layer was formed at a level of 25 to 150 nm while changing the spin coating speed to 1000 to 5000 rpm. After coating the nano thin film structure layer and dried for 10 minutes on a 130 degree hot plate, light transmittance and sheet resistance were measured.

As a result of the measurement, referring to Table 2, when the carbon nanotubes were used as the conductive thin film, the sheet resistance value and the light transmittance were improved when the thickness of the nano thin film structure layer was 50 to 150 nm. Furthermore, when the thickness of the nano thin film structure layer is 70 ~ 120nm, it can be seen that the sheet resistance value is reduced by 12% or more, the light transmittance is improved by 2.1% or more. That is, when the conductive thin film is formed using carbon nanotubes, the nano thin film structure layer is preferably formed to a thickness of 70 ~ 120nm.

Nano thin film structure layer
thickness Sheet Resistance (ohm / sq) Light transmittance (%) oxide
Before coating oxide
After coating After oxide coating
% Change in resistance Before oxide coating After oxide coating After oxide coating
Permeability change 25 nm 120 116 -3 87.1 87.2 0.1 50 nm 125 100 -20 87.2 87.9 0.7 70 nm 109 79 -28 87.2 89.1 1.9 100 nm 135 75 -44 87.1 90 2.9 120 nm 124 71 -43 87.5 89.8 2.3 150 nm 119 80 -33 87.4 88.5 1.1

The conductive thin film according to Table 3 was coated with a silver nanowire dispersion on a glass substrate and dried, and again coated with a carbon nanotube dispersion to form a transparent conductive thin film. The light transmittance and the sheet resistance of the conductive thin film formed of silver nanowires and carbon nanotubes were measured first.

A nano thin film structure layer of silicon oxide is formed on the conductive thin film formed of silver nanowires and carbon nanotubes by spin coating. In order to control the thickness of the nano thin film structure layer, the silicon oxide sol solution was diluted with ethanol to adjust the concentration, or the thickness of the nano thin film structure layer was formed at a level of 25 to 150 nm while changing the spin coating speed to 1000 to 5000 rpm. After coating the nano thin film structure layer and dried for 10 minutes on a 130 degree hot plate, light transmittance and sheet resistance values were measured.

Referring to Table 3, in the case of using silver nanowires and carbon nanotubes as the material of the conductive thin film, it can be seen that the sheet resistance value and the light transmittance are improved when the thickness of the nano thin film structure layer is 25 to 150 nm. Furthermore, when the thickness of the nano thin film structure layer is 70 ~ 150nm, it can be confirmed that the sheet resistance value is reduced by 20% or more, and the transmittance is improved by 1.1% or more. That is, when the conductive thin film is formed using silver nanowires and carbon nanotubes, the nano thin film structure layer is preferably formed to a thickness of 70 ~ 150nm.

As described above, the composite conductive thin films 10 and 20 according to the present exemplary embodiment may show excellent electrical conductivity and light transmittance when compared with the conductive thin film before coating the nano thin film structure layer according to the thickness of the nano thin film structure layer 16. . According to the experimental results of Tables 1 to 3, it can be confirmed that the sheet resistance is reduced by up to 44% depending on the metal nanowires or carbon nanotubes. That is, although silicon oxide is an insulating material, the composite conductive thin films 10 and 20 according to the present embodiment showed improved electrical conductivity. Even in the case of light transmittance, it can be confirmed that the results are improved by up to 4% according to the thickness of the nano thin film structure layer 16 formed on the composite conductive thin films 10 and 20 according to the present embodiment.

On the other hand, the embodiments disclosed in the specification and drawings are merely presented specific examples to aid understanding, and are not intended to limit the scope of the present invention. It will be apparent to those skilled in the art that other modifications based on the technical idea of the present invention are possible in addition to the embodiments disclosed herein.

10, 20: composite conductive thin film
12: substrate
14: conductive thin film
16: nano thin film structure layer

Claims (8)

Board;
A conductive thin film formed on the substrate and including metal nanowires or carbon nanotubes;
A porous nano thin film structure layer formed to cover the conductive thin film and including silicon oxide; / RTI >
The nano thin film structure layer,
A composite conductive thin film, which is formed to cover the conductive thin film by being impregnated with the conductive thin film by using a silicon oxide in a spherical or grain size of 10 to 100 nm. The method of claim 1,
The metal nanowires include silver nanowires or copper nanowires having a diameter of 10 to 100 nm and a length of 10 to 100 μm,
The carbon nanotube is a composite conductive thin film, characterized in that it has a diameter of 1 ~ 30nm, length 300nm ~ 100㎛. The method of claim 2, wherein the nano thin film structure layer,
Composite conductive thin film, characterized in that formed to a thickness of 30 ~ 150nm. The method of claim 3,
When the conductive thin film is formed of metal nanowires, the nano thin film structure layer is formed to a thickness of 50 ~ 120nm,
When the conductive thin film is formed of carbon nanotubes, the nano thin film structure layer is formed to a thickness of 70 ~ 120nm,
When the conductive thin film is formed of metal nanowires and carbon nanotubes, the nano thin film structure layer is a composite conductive thin film, characterized in that formed to a thickness of 70 ~ 150nm. delete The method of claim 1,
A portion of the metal nanowires or carbon nanotubes forming the conductive thin film is exposed to the surface of the nano thin film structure layer, or the composite conductive thin film, characterized in that located close to the surface of the nano thin film structure layer. Forming a conductive thin film including metal nanowires or carbon nanotubes on the substrate;
Forming a porous nano thin film structure layer including silicon oxide to cover the conductive thin film; Lt; / RTI >
The nano thin film structure layer,
A method for producing a composite conductive thin film, characterized in that it is formed so as to cover the conductive thin film by impregnating the conductive thin film using a spherical or granular silicon oxide of 10 ~ 100nm size. The method of claim 7, wherein
In the step of forming the conductive thin film,
The conductive thin film may be dip coated, spray coated, spin coated, solution casting, dropping, roll coating, gravure coating or bar coating. Formed into,
In the step of forming the nano thin film structure layer,
The nano thin film structure layer is formed by applying a dispersion solution containing nanoparticles of silicon oxide to the conductive thin film, or by forming a sol (silicon) coating the silicon oxide after freezing (gelation) Method for producing a conductive thin film.

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