KR101327851B1 - Method for forming copper line and method for manufacturing liquid crystal display using the same - Google Patents

Abstract

The present invention relates to a method for forming a copper wiring and a method of manufacturing a liquid crystal display device using the same, and in particular, a method for forming a copper wiring includes forming a first metal layer by depositing copper on a substrate; Forming a photoresist pattern on the first metal layer through a photo process; Inspecting the photoresist pattern; Stripping the photoresist pattern; Depositing copper on the entire upper surface of the first metal layer on which the photoresist pattern is stripped to form a second metal layer thinner than the first metal layer; And patterning the first and second metal layers through photo and etching processes to form copper wiring, wherein the copper wiring has a double layer structure in which the first and second metal layers are sequentially stacked.

Copper, Re-Deposition, Liquid Crystal Display, Developer, Stripper

Description

Copper wiring forming method and manufacturing method of liquid crystal display device using the same {METHOD FOR FORMING COPPER LINE AND METHOD FOR MANUFACTURING LIQUID CRYSTAL DISPLAY USING THE SAME}

1 is a plan view showing a liquid crystal display device according to the prior art

2A through 2F are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to the related art.

3 is a flow chart showing a method for forming a copper wiring according to the present invention.

4A to 4I are cross-sectional views illustrating a method of forming a copper wiring according to the present invention.

5 is a plan view showing a liquid crystal display device according to the present invention.

6A through 6I are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to the present invention.

<Name of main part of drawing>

10, 150, 210: substrate 152, 234: first metal layer

160, 238: second metal layer 154, 162, 236: photoresist

154a, 162a, 236a: photoresist pattern

170: first copper wiring 172: second copper wiring

12a and 212a: gate electrode 14 and 214: gate insulating film

20a, 220a: semiconductor layers 22a, 222a: source electrode

24, 224 drain electrodes 26 and 240 protective film

28, 242: contact holes 30, 230: pixel electrodes

The present invention relates to a copper wiring forming method and a manufacturing method of a liquid crystal display device using the same, and in particular, a copper wiring forming method and a liquid crystal display using the same, which can prevent a pattern defect from occurring due to a photo rework process The invention relates to a method for manufacturing a device.

In recent years, there has been a demand for a display device in accordance with the development of an information society, and in recent years, a display device such as a liquid crystal display (LCD), a plasma display panel (PDP), an electro luminescent display (ELD), a vacuum fluorescent display ) Have been studied, and some of them have already been used as display devices in various devices.

Among them, the liquid crystal display device is the most widely used as a substitute for the CRT (Cathode Ray Tube) for the mobile image display device because of the excellent image quality, light weight, thinness, and low power consumption. In addition to the use of the present invention, a variety of applications such as a television, a computer monitor, and the like for receiving and displaying broadcast signals have been developed.

In order for liquid crystal display devices to be used in various parts as a general screen display device, it is important to develop high-quality images such as high definition, high brightness and large area while maintaining the features of light weight, thinness and low power consumption can do.

Hereinafter, a conventional liquid crystal display device and a manufacturing method thereof will be described.

1 is a plan view illustrating a liquid crystal display device according to the prior art, and FIGS. 2A to 2F are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to the prior art.

First, in the conventional LCD, a plurality of gate lines 12 are arranged in one direction at regular intervals to define the pixel region P on the substrate 10, and are fixed in a direction perpendicular to the gate line 12. A plurality of data lines 22 are arranged at intervals.

Each pixel region P defined by the intersection of the gate line 12 and the data line 22 is switched by the pixel electrode 30 and a signal applied to the gate line 12 to be connected to the data line 22. A plurality of thin film transistors for transmitting an applied signal to each pixel electrode 30 is formed.

In this case, the thin film transistor protrudes from the gate line 12, the semiconductor layer 20a formed above the gate electrode 12a, and the data line 22 protrudes from the semiconductor layer 20a. A source electrode 22a formed on one side of the upper portion and a drain electrode 24 formed on the other side of the semiconductor layer 20a at regular intervals from the source electrode 22a are formed.

In this case, a gate insulating film 14 is formed on the entire surface of the substrate 10 including the gate line 12 and the gate electrode 12a to insulate the semiconductor layer 20a from the source electrode 22a. And a protective film 26 is formed on the entire surface of the substrate 10 including the drain electrode 24. In addition, a contact hole 28 is formed in the passivation layer 26 on the drain electrode 24, and the pixel electrode 30 is electrically connected to the drain electrode 24 through the contact hole 28.

Next, a manufacturing method of a conventional liquid crystal display device will be described.

First, aluminum (Al) or aluminum alloy (Al alloy) is deposited on the transparent glass substrate 10 by sputtering, as shown in FIG. 2A, and then selectively removed through a photo and etching process. A gate line 12 and a gate electrode 12a protruding therefrom are formed on one side 10.

As shown in FIG. 2B, the gate insulating layer 14 including the silicon nitride layer SiN _x or the silicon oxide layer SiO ₂ is formed on the entire surface of the substrate 10 including the gate line 12 and the gate electrode 12a.

Subsequently, a pure amorphous silicon layer 16 and an amorphous silicon layer 18 including impurities are sequentially formed on the gate insulating layer 14.

As shown in FIG. 2C, the pure amorphous silicon layer 16 and the amorphous silicon layer 18 including impurities are selectively removed through a photo and etching process, thereby forming the semiconductor layer 20a and the ohmic contact on the gate electrode 12a. Form layer 20b.

As shown in FIG. 2D, low-resistance metal materials such as aluminum (Al), aluminum alloy (AlNd), molybdenum (Mo), and chromium (Cr) are deposited on the entire surface of the substrate 10, and the photo and wet etching process is performed to reduce the resistance. The resistive metal material may be selectively removed to intersect the gate line 12 with the data line 22, the source electrode 22a protruding from the data line 22 onto the semiconductor layer 20a, and the drain electrode spaced apart from the data line 22. 24).

Subsequently, the ohmic contact layer 20b exposed between the source electrode 22a and the drain electrode 24 is selectively removed through a dry etching process.

As shown in FIG. 2E, the passivation layer 26 is formed on the entire surface of the glass substrate 10 including the source electrode 22a and the drain electrode 24, and the passivation layer 26 is exposed to a predetermined portion of the surface of the drain electrode 24. ) Is selectively removed to form the contact hole 28.

As shown in FIG. 2F, a transparent metal material, such as indium tin oxide (ITO) or indium zinc oxide (IZO), is deposited on the entire surface of the substrate 10 including the contact hole 28, and then transparent metal through a photo and etching process. The material is selectively removed to form the pixel electrode 30 electrically connected to the drain electrode 24 through the contact hole 28.

In the case of manufacturing the liquid crystal display according to the above-described manufacturing method, a desired pattern may not be obtained in the process of depositing a metal and patterning the photo by etching.

For example, in the photo process, the photo resist is applied, exposed through a mask, developed using a developer, and the pattern of the photo resist is inspected. If the wrong pattern is found, the metal is continuously etched. The pattern will have the wrong pattern. Therefore, in this case, the photo rework process is performed without continuing the etching process.

That is, a strip process for removing all photoresist patterns is performed. Then, a photoresist is applied and a photo and etching process may be performed to obtain a desired pattern.

However, in the above, the metal underneath is damaged by the developer or the stripper, thereby weakening the adhesion of the photoresist and thus the etchant during the etching process. It may penetrate into the lower portion of the photoresist and cause pattern defects.

The present invention has been made to solve the above problems, in the photo rework process (developer) or a stripper (metal) under the damage due to the stripper (stripper), thereby causing the adhesive force of the photoresist ( SUMMARY OF THE INVENTION An object of the present invention is to provide a method for forming a copper wiring and a method of manufacturing a liquid crystal display device using the same, which can prevent the adhesion from weakening.

In addition, the present invention provides a method for forming a copper wiring that can prevent a pattern defect from entering into the lower portion of the photoresist during the etching process due to the photo rework process, and using the same It is an object of the present invention to provide a method for manufacturing a liquid crystal display device.

Copper wiring forming method according to the present invention according to the above object to form a first metal layer by depositing copper on the substrate, forming a photoresist pattern through the photo process on the first metal layer, the photo Inspecting a resist pattern, stripping the photoresist pattern, depositing copper on the entire upper surface of the first metal layer to form a second metal layer, and patterning the first and second metal layers through a photo and etching process It characterized by comprising a step of forming a copper wiring.

According to an aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, the method including: forming a gate electrode on a predetermined region of a substrate, forming a gate insulating film on an entire surface of the substrate including the gate electrode, and forming an upper portion of the gate electrode. Forming a semiconductor layer on a gate insulating film of the semiconductor layer; forming source and drain electrodes on both sides of the upper portion of the semiconductor layer by using the copper wiring forming method of the present invention; And forming a contact hole on the passivation layer on the drain electrode, and forming a pixel electrode to be electrically connected to the drain electrode through the contact hole.

Hereinafter, a copper wiring forming method according to the present invention with reference to the accompanying drawings as follows.

3 is a flowchart showing a method for forming a copper wiring according to the present invention, and FIGS. 4A to 4I are process cross-sectional views showing a method for forming a copper wiring according to the present invention.

First, a method of forming a copper wiring according to the present invention will be described with reference to FIG. 3.

Copper is deposited 110 on the substrate and photoresist 112 is applied to the entire upper surface of the copper. Next, after the exposure 114 and the development 116 using a mask, a process of inspecting 118 whether the pattern is in a desired shape is performed.

At this time, if the pattern is in the desired shape, the etching 130 and the strip process 132 to remove the photoresist to complete the copper wiring.

However, if the pattern does not come out in the desired shape, the etching process is not immediately performed, and after the strip process 120 for removing the photoresist, the copper is redeposited 122. Then, the photoresist is applied 112 again, and after the exposure 114 and development 116 processes, if the pattern has a desired shape, the etching 130 process is performed.

Hereinafter, the copper wiring forming method according to the present invention will be described in more detail with reference to FIGS. 4A to 4I.

First, as shown in FIG. 4A, the first metal layer 152 is formed by depositing 2000 μs of copper (Cu) on the entire upper surface of the substrate 150 by the sputtering method.

At this time, the thickness of the copper forming the first metal layer 152 is suitably about 2000 kPa to 2500 kPa.

As shown in FIG. 4B, the photoresist 154, which is a photosensitive material, is coated on the entire upper surface of the first metal layer 152.

As shown in FIG. 4C, a mask (not shown) is corresponded to the photoresist 154 and exposed to UV light. After this exposure process, the photoresist 154 is developed with a developer to form the photoresist pattern 154a.

At this time, if the photoresist is positive, the bonding of the portions exposed to light is weakened and removed by the developer, and the portions not exposed to the light remain.

On the other hand, if the photoresist is negative, the bonding of the portions exposed to the light becomes stronger and remains intact, and the portions not exposed to the light are removed by a developer.

Next, although not shown, it is checked whether the photoresist pattern 154a is formed in a desired shape. At this time, if the photoresist pattern 154a is formed in a desired shape, the etching process is continued.

However, if the photoresist pattern 154a is not formed in a desired shape, the etching process is not performed, and a photo rework process is performed as shown in FIG. 4D. That is, a strip process for removing all photoresist patterns is performed. At this time, the surface of the first metal layer 152 may be damaged by the stripper used in the strip process.

As shown in FIG. 4E, copper (Cu) is deposited on the entire upper surface of the first metal layer 152 by 300 占 to form a second metal layer 160 by sputtering.

At this time, the second metal layer 160 is preferably formed to a thickness of between 100 kPa to 500 kPa.

As shown in FIG. 4F, a photoresist 162, which is a photosensitive material, is coated on the entire upper surface of the second metal layer 160.

As shown in FIG. 4G, a mask (not shown) is corresponded on the photoresist 162 and the UV light is exposed. After the exposure process, the photoresist 162 is developed with a developer to form the photoresist pattern 162a.

Next, although not shown, it is examined whether the photoresist pattern 162a is formed in a desired shape. In this case, if the photoresist pattern 162a is not formed in a desired shape, as described above, all of the photoresist patterns 162a are removed through a stripping process, and a photo rework process is performed.

On the other hand, if the photoresist pattern 162a is formed in a desired shape, as shown in FIG. 4H, the first resist layer 152 and the second metal layer 160 are etched using the photoresist pattern 162a as a mask, and the photoresist pattern 162a is formed. The first copper wiring 170 and the second copper wiring 172 is formed on the same.

After both the first and second copper wires 170 and 172 are formed, as shown in FIG. 4I, all of the photoresist pattern 162a on the second copper wire 172 is removed through a strip process.

The present invention has been described in particular with respect to a method of forming copper wiring, and the present invention can be applied to other metals other than copper (Cu).

Next, a manufacturing method of the liquid crystal display device according to the present invention will be described with reference to the accompanying drawings.

5 is a plan view showing a liquid crystal display device according to the present invention, and FIGS. 6A to 6I are process cross-sectional views showing a manufacturing method of the liquid crystal display device according to the present invention.

First, in the liquid crystal display according to the present invention, in order to define the pixel region P on the substrate 210, a plurality of gate lines 212 are arranged in one direction at regular intervals and perpendicular to the gate lines 212. The plurality of data lines 222 are arranged at regular intervals in the direction.

Each pixel region P defined by the intersection of the gate line 212 and the data line 222 is switched by a signal applied to the pixel electrode 230 and the gate line 212 to the data line 222. A plurality of thin film transistors which transmit an applied signal to each pixel electrode 230 is formed.

The thin film transistor may include a gate electrode 212a protruding from the gate line 212, a semiconductor layer 220a formed on the gate electrode 212a, and ohmic formed on both sides of the semiconductor layer 220a. The contact layer 220b, the source electrode 222a protruding from the data line 222 and formed on one side of the semiconductor layer 220a, and the other side of the semiconductor layer 220a at regular intervals from the source electrode 222a. The drain electrode 224 formed in the structure is included.

In this case, a gate insulating film 214 is formed on the entire surface of the substrate 210 including the gate line 212 and the gate electrode 212a to insulate the semiconductor layer 220a from the source electrode 222a. And a passivation layer 226 is formed on the entire surface of the substrate 210 including the drain electrode 224. In addition, a contact hole 228 is formed in the passivation layer 226 on the drain electrode 224, and the pixel electrode 230 is electrically connected to the drain electrode 224 through the contact hole 228.

In order to manufacture such a liquid crystal display, first, as shown in FIG. 6A, on a transparent glass substrate 210, copper (Cu), aluminum (Al), aluminum alloy (AlNd), molybdenum (Mo), and chromium (Cr) A low resistance metal material such as at least one layer is deposited.

Subsequently, the metal material is patterned through photo and etching processes to form a gate line 212 of FIG. 5 and a gate electrode 212a branched from the gate line.

As illustrated in FIG. 6B, an insulating material such as silicon nitride (SiNx) or silicon oxide (SiOx) is deposited on the entire surface of the substrate 210 including the gate electrode 212a to form the gate insulating layer 214.

Subsequently, a pure amorphous silicon layer 216 is formed on the entire surface of the substrate 210 on the gate insulating layer 214, and an amorphous silicon layer 218 including impurities is stacked on the upper portion of the gate insulating layer 214.

As illustrated in FIG. 6C, the semiconductor layer is formed on the gate insulating layer 214 on the gate electrode 212a by selectively removing the pure amorphous silicon layer 216 and the amorphous silicon layer 218 including impurities through photo and etching processes. 220a and an ohmic contact layer 220b are formed.

As illustrated in FIG. 6D, the first metal layer 234 is formed by sputtering the copper (Cu) by sputtering (2000) on the entire upper surface of the substrate 210 including the ohmic contact layer 220b.

At this time, the thickness of the copper forming the first metal layer 234 is suitably about 2000 kPa to 2500 kPa.

Next, a photoresist 236, which is a photosensitive material, is coated on the entire upper surface of the first metal layer 234.

As shown in FIG. 6E, a mask (not shown) is applied on the photoresist 236 and the UV light is exposed. After the exposure process, the photoresist 236 is developed with a developer to form the photoresist pattern 236a.

Next, although not shown, it is checked whether the photoresist pattern 236a is formed in a desired shape. In this case, if the photoresist pattern 236a is not formed in a desired shape, a photo rework process is performed.

As shown in FIG. 6F, a strip process for removing all of the photoresist pattern 236a is performed. At this time, the surface of the first metal layer 234 may be damaged by the stripper used in the strip process.

Subsequently, copper (Cu) is deposited on the entire upper surface of the first metal layer 234 by 300 占 to form a second metal layer 238 by sputtering.

At this time, the second metal layer 238 is preferably formed to a thickness of between 100 kPa to 500 kPa.

Next, although not shown, a photoresist (not shown), which is a photosensitive material, is coated on the entire upper surface of the second metal layer 238, and a photoresist pattern (not shown) is formed through an exposure and development process.

Subsequently, it is checked whether the photoresist pattern is formed in a desired shape, and if formed in a desired shape, the first metal layer 234 and the second metal layer 238 are patterned through an etching process as shown in FIG. 6G to form a gate line (FIG. 5). The data line 222 and the data line 222 that intersect 212 of the second semiconductor layer 220a and protrude from the data line 222 on the ohmic contact layer 220b on one side of the semiconductor layer 220a and on the semiconductor layer 220a. The drain electrode 224 is formed on the other ohmic contact layer 220b.

That is, the source electrode 222a and the drain electrode 224 are formed to be spaced apart from each other on the ohmic contact layer 220b on both sides of the semiconductor layer 220a. In addition, at this time, the ohmic contact layer 220b below the source electrode 222a and the drain electrode 224 is removed to form a channel.

In the above, the data line 222, the source electrode 222a, and the drain electrode 224 have a double stacked structure of copper (Cu).

Next, the photoresist patterns on the data line 222, the source electrode 222a, and the drain electrode 224 are all removed through a strip process.

As illustrated in FIG. 6H, an inorganic material, silicon nitride (SiN _x ) or silicon oxide (SiO ₂ ) may be chemically deposited on the entire surface of the substrate 210 including the data line 222, the source electrode 222a, and the drain electrode 224. The protective film 240 is formed by vapor deposition or by applying BCB (organic material Benzocyclobutene) or an acrylic resin (acryl resin).

Next, the passivation layer 240 is patterned to expose the surface of the drain electrode 224 to form a contact hole 242.

As shown in FIG. 6I, transparent metals such as indium tin oxide (ITO) and indium zinc oxide (IZO) are deposited on the entire surface of the substrate 210 including the contact hole 242, and the transparent metal is patterned through photo and etching processes. In the pixel region P, the pixel electrode 230 is formed to be electrically connected to the drain electrode 224 through a contact hole.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, Will be apparent to those of ordinary skill in the art.

The copper wiring forming method as described above and the manufacturing method of the liquid crystal display device using the same have the following effects.

First, after the strip process in the photo rework process, by re-depositing the copper to a thickness between 100 kPa to 500 kPa, there is an effect that can prevent the adhesion of the photo resist in the subsequent photo process is weakened .

Second, after the strip process during the photo rework process, the copper is redeposited to a thickness between 100 kPa and 500 kPa, so that during the etching process, an etchant penetrates into the lower portion of the photoresist to cause a pattern defect. There is an effect that can be prevented.

Claims (7)

Depositing copper on the substrate to form a first metal layer; Forming a photoresist pattern on the first metal layer through a photo process; Inspecting the photoresist pattern; Stripping the photoresist pattern; Depositing copper on the entire upper surface of the first metal layer on which the photoresist pattern is stripped to form a second metal layer thinner than the first metal layer; And And forming a copper wiring by patterning the first and second metal layers through a photo and an etching process. Wherein the copper wiring is a copper wiring forming method, characterized in that the first and second metal layer is made of a double layer structure stacked in sequence. The method of claim 1, The second metal layer is a copper wiring forming method, characterized in that to form a copper thickness of 100 ~ 500Å. The method of claim 2, The second metal layer is a copper wiring forming method, characterized in that for forming a copper thickness of 300 kPa. The method of claim 1, The first metal layer is a copper wiring forming method, characterized in that formed in a thickness of between 2000 kPa to 2500 kPa. delete Forming a gate electrode in a predetermined region of the substrate; Forming a gate insulating film on an entire surface of the substrate including the gate electrode; Forming a semiconductor layer on the gate insulating layer on the gate electrode; Forming a source electrode and a drain electrode on both sides of the upper portion of the semiconductor layer using the copper wiring forming method according to any one of claims 1 to 4; Forming a protective film on an entire surface of the substrate including the source and drain electrodes; Forming a contact hole on the passivation layer on the drain electrode; And forming a pixel electrode to be electrically connected to the drain electrode through the contact hole. delete

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