KR101322072B1 - 규소 웨이퍼의 전면 상에 그리드 전극을 형성하는 방법 - Google Patents

규소 웨이퍼의 전면 상에 그리드 전극을 형성하는 방법 Download PDF

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Publication number
KR101322072B1
KR101322072B1 KR1020117030334A KR20117030334A KR101322072B1 KR 101322072 B1 KR101322072 B1 KR 101322072B1 KR 1020117030334 A KR1020117030334 A KR 1020117030334A KR 20117030334 A KR20117030334 A KR 20117030334A KR 101322072 B1 KR101322072 B1 KR 101322072B1
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KR
South Korea
Prior art keywords
metal paste
glass frit
silver
paste
electrically conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020117030334A
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English (en)
Korean (ko)
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KR20120012989A (ko
Inventor
러셀 데이빗 앤더슨
케네스 워런 행
시흐-밍 카오
지오반나 라우디시오
쳉-난 린
춘-크웨이 우
Original Assignee
이 아이 듀폰 디 네모아 앤드 캄파니
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Publication of KR20120012989A publication Critical patent/KR20120012989A/ko
Application granted granted Critical
Publication of KR101322072B1 publication Critical patent/KR101322072B1/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/10—Frit compositions, i.e. in a powdered or comminuted form containing lead
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
KR1020117030334A 2009-05-20 2010-05-20 규소 웨이퍼의 전면 상에 그리드 전극을 형성하는 방법 Expired - Fee Related KR101322072B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17988509P 2009-05-20 2009-05-20
US61/179,885 2009-05-20
PCT/US2010/035522 WO2010135496A1 (en) 2009-05-20 2010-05-20 Process of forming a grid electrode on the front-side of a silicon wafer

Publications (2)

Publication Number Publication Date
KR20120012989A KR20120012989A (ko) 2012-02-13
KR101322072B1 true KR101322072B1 (ko) 2013-10-28

Family

ID=42271964

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117030334A Expired - Fee Related KR101322072B1 (ko) 2009-05-20 2010-05-20 규소 웨이퍼의 전면 상에 그리드 전극을 형성하는 방법

Country Status (7)

Country Link
US (2) US8486826B2 (enExample)
EP (1) EP2433304A1 (enExample)
JP (1) JP5898065B2 (enExample)
KR (1) KR101322072B1 (enExample)
CN (1) CN102428567B (enExample)
TW (1) TWI504011B (enExample)
WO (1) WO2010135496A1 (enExample)

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KR20120007517A (ko) * 2009-03-30 2012-01-20 이 아이 듀폰 디 네모아 앤드 캄파니 금속 페이스트 및 규소 태양 전지의 제조시의 그 용도
US8486826B2 (en) * 2009-05-20 2013-07-16 E I Du Pont De Nemours And Company Process of forming a grid electrode on the front-side of a silicon wafer
CN102479883A (zh) * 2009-11-27 2012-05-30 无锡尚德太阳能电力有限公司 太阳电池正面电极的形成方法
US20110240124A1 (en) * 2010-03-30 2011-10-06 E.I. Du Pont De Nemours And Company Metal pastes and use thereof in the production of silicon solar cells
CA2822592A1 (en) * 2010-12-24 2012-06-28 Shin-Etsu Chemical Co., Ltd. Method for manufacturing solar cell element and solar cell element
AU2012245628B2 (en) 2011-04-18 2016-09-22 Diamir, Llc Methods of using miRNA from bodily fluids for early detection and monitoring of Mild Cognitive Impairment (MCI) and Alzheimer's Disease (AD)
JP6027171B2 (ja) * 2011-07-04 2016-11-16 株式会社日立製作所 封着用ガラスフリット、封着用ガラスペースト、導電性ガラスペースト、およびそれらを利用した電気電子部品
CN103165689B (zh) * 2011-12-12 2015-10-28 茂迪股份有限公司 太阳能电池及其制造方法
JP5583196B2 (ja) * 2011-12-21 2014-09-03 パナソニック株式会社 薄膜太陽電池およびその製造方法
CN103171260A (zh) * 2011-12-23 2013-06-26 昆山允升吉光电科技有限公司 一种太阳能电池电极的配套网板及其印刷方法
JP2015523707A (ja) * 2012-04-18 2015-08-13 ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー 太陽電池接点の印刷方法
KR101396444B1 (ko) * 2013-05-06 2014-05-22 한화케미칼 주식회사 태양전지의 전극의 제조방법 및 이를 이용한 태양전지
TW201511300A (zh) * 2013-09-11 2015-03-16 Inst Nuclear Energy Res Atomic Energy Council 具有摻雜矽或硼原子之鋁金屬電極之製備方法
KR20150035189A (ko) 2013-09-27 2015-04-06 엘지전자 주식회사 태양 전지
KR101859017B1 (ko) * 2015-12-02 2018-05-17 삼성에스디아이 주식회사 전극 형성 방법, 이로부터 제조된 전극 및 태양 전지
CN105590663B (zh) * 2016-01-07 2017-09-22 清华大学 无铅无铋导电银浆、银栅线的制备方法及硅太阳能电池
JP6810986B2 (ja) * 2016-07-14 2021-01-13 アートビーム株式会社 太陽電池および太陽電池の製造方法
WO2018174898A1 (en) 2017-03-24 2018-09-27 Heraeus Precious Metals North America Conshohocken Llc Low etching and non-contact glasses for electroconductive paste compositions
CN108110087B (zh) * 2017-12-20 2019-12-17 江苏日托光伏科技股份有限公司 一种低线宽mwt硅太阳能电池的制备方法
US20190280133A1 (en) 2018-03-09 2019-09-12 Heraeus Precious Metals North America Conshohocken Llc Seed layer for improved contact on a silicon wafer
KR102576589B1 (ko) * 2018-09-05 2023-09-08 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 태양 전지 및 이를 포함하는 태양 전지 패널
CN109539604B (zh) * 2019-01-17 2020-05-29 河北道荣新能源科技有限公司 薄膜光伏发电耦合选择性吸收涂层结构
CN109631353B (zh) * 2019-01-17 2020-05-08 河北道荣新能源科技有限公司 薄膜光伏发电耦合选择性吸收涂层制法及其集热管制法
US20210257505A1 (en) * 2020-02-18 2021-08-19 Dupont Electronics, Inc. Solar cell and method for manufacturing the same
JP2021022735A (ja) * 2020-09-21 2021-02-18 アートビーム株式会社 太陽電池および太陽電池の製造方法
CN120224824A (zh) * 2023-10-08 2025-06-27 西安隆基乐叶光伏科技有限公司 一种太阳能电池的制作方法、太阳能电池和电池串

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US5279682A (en) * 1991-06-11 1994-01-18 Mobil Solar Energy Corporation Solar cell and method of making same
WO2009029738A1 (en) * 2007-08-31 2009-03-05 Ferro Corporation Layered contact structure for solar cells
EP2058865A1 (en) * 2006-08-31 2009-05-13 Shin-Etsu Handotai Co., Ltd Method for forming semiconductor substrate and electrode, and method for manufacturing solar battery

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US7462304B2 (en) * 2005-04-14 2008-12-09 E.I. Du Pont De Nemours And Company Conductive compositions used in the manufacture of semiconductor device
WO2008078771A1 (ja) * 2006-12-26 2008-07-03 Kyocera Corporation 太陽電池素子及び太陽電池素子の製造方法
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US5279682A (en) * 1991-06-11 1994-01-18 Mobil Solar Energy Corporation Solar cell and method of making same
EP2058865A1 (en) * 2006-08-31 2009-05-13 Shin-Etsu Handotai Co., Ltd Method for forming semiconductor substrate and electrode, and method for manufacturing solar battery
WO2009029738A1 (en) * 2007-08-31 2009-03-05 Ferro Corporation Layered contact structure for solar cells

Also Published As

Publication number Publication date
KR20120012989A (ko) 2012-02-13
US8486826B2 (en) 2013-07-16
US20130276881A1 (en) 2013-10-24
EP2433304A1 (en) 2012-03-28
JP5898065B2 (ja) 2016-04-06
TW201110398A (en) 2011-03-16
JP2012527780A (ja) 2012-11-08
TWI504011B (zh) 2015-10-11
US9054239B2 (en) 2015-06-09
US20100294359A1 (en) 2010-11-25
WO2010135496A1 (en) 2010-11-25
CN102428567B (zh) 2015-01-07
CN102428567A (zh) 2012-04-25

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