KR101321103B1 - Fineness patterning method and apparatus thereof - Google Patents

Fineness patterning method and apparatus thereof Download PDF

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Publication number
KR101321103B1
KR101321103B1 KR1020130013422A KR20130013422A KR101321103B1 KR 101321103 B1 KR101321103 B1 KR 101321103B1 KR 1020130013422 A KR1020130013422 A KR 1020130013422A KR 20130013422 A KR20130013422 A KR 20130013422A KR 101321103 B1 KR101321103 B1 KR 101321103B1
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KR
South Korea
Prior art keywords
thin film
conductive thin
film layer
pattern
substrate
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KR1020130013422A
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Korean (ko)
Inventor
조정대
김광영
강동우
최영만
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한국기계연구원
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

An object of the present invention is to provide a fine pattern forming method for forming a conductive thin film layer on a substrate, and patterning the conductive thin film layer to form a fine pattern. The method of forming a fine pattern according to an embodiment of the present invention includes a first step of preparing a substrate having a conductive thin film layer, and a second step of patterning the conductive thin film layer.

Description

FINENESS PATTERNING METHOD AND APPARATUS THEREOF

The present invention relates to a method and apparatus for forming a fine pattern on a substrate.

For example, a printing method includes preparing a printing roll having a concave pattern, applying ink to a surface to prepare a media roll having a coating layer, and contacting and rotating the printing roll and the media roll to correspond to the pattern. The intermediate pattern is formed, and the intermediate roll is contacted and rotated to the substrate to transfer the intermediate pattern to the substrate to form a printed pattern.

At this time, it is necessary to prepare a printing roll having a pattern, it is difficult to produce a printing roll, it is difficult to print a nano-sized fine pattern. In addition, in the printing method, since the ink forming the pattern has fluidity, the line width size of the pattern is restricted.

An object of the present invention is to provide a fine pattern forming method for forming a conductive thin film layer on a substrate, and patterning the conductive thin film layer to form a fine pattern. It is also an object of the present invention to provide a fine pattern forming apparatus implementing the above method.

The method of forming a fine pattern according to an embodiment of the present invention includes a first step of preparing a substrate having a conductive thin film layer and a second step of patterning the conductive thin film layer.

In the first step, by sputtering a conductive material on the substrate to form the conductive thin film layer on the substrate, the substrate may be supplied in a roll state.

In the second step, the photoresist is printed on the conductive thin film layer by any one of a roll-to-roll offset method and a mask spray method, the photoresist pattern is backed, the conductive thin film layer is etched, and the photoresist pattern is washed. , A conductive thin film pattern can be formed.

In the first step, by sputtering a conductive material on the substrate to form the conductive thin film layer on the substrate, by coating a photoresist on the conductive thin film layer to form a photoresist layer on the conductive thin film layer, the substrate in a roll state Can supply

In the second step, the photoresist layer is patterned on the conductive thin film layer by any one of a laser method and a mask ultraviolet light method, and a backing pattern of the photoresist pattern is developed and the exposed portion of the photoresist layer is developed to form a photoresist pattern. The conductive thin film pattern may be formed by performing any one of a process of forming a film, etching the conductive thin film layer, and cleaning the photoresist pattern.

An apparatus for forming a fine pattern according to an embodiment of the present invention includes an uncoiler for supplying a substrate having a conductive thin film layer, a patterning unit for patterning the conductive thin film layer on the substrate supplied to the uncoiler, and a discharge from the patterning unit. And a recoiler to rewind the substrate having the conductive thin film pattern.

The patterning unit may include a roll-to-roll offset printing unit for printing a photoresist on the conductive thin film layer, an air knife for backing the photoresist pattern, an etching unit for etching the conductive thin film layer of the substrate via the air knife, and the The cleaning part may include a cleaning part for cleaning the photoresist pattern of the substrate via an etching part.

The patterning unit may include a mask spray printing unit for printing a photoresist on the conductive thin film layer, an air knife for backing the photoresist pattern, an etching unit for etching the conductive thin film layer of the substrate via the air knife, and the etching It may include a cleaning portion for cleaning the photoresist pattern of the substrate via the portion.

The uncoiler may supply a substrate having a photoresist layer coated on the conductive thin film layer.

The patterning part may include a laser pattern part for patterning the photoresist layer on the conductive thin film layer, an air knife for backing the photoresist pattern, an etching part for etching the conductive thin film layer of the substrate via the air knife, and the etching It may include a cleaning portion for cleaning the photoresist pattern of the substrate via the portion.

The patterning part may include a mask ultraviolet pattern part for patterning and exposing a photoresist on the conductive thin film layer, a developing part for developing a photoresist pattern by developing an exposed part of the photoresist layer, and the conductive thin film layer of the substrate via the developing part. An etching portion for etching the, and a cleaning portion for cleaning the photoresist pattern of the substrate via the etching portion.

Thus, in one embodiment of the present invention, by forming a conductive thin film layer on the substrate and patterning the conductive thin film layer, it is possible to easily form a fine conductive thin film pattern on the substrate.

1 is a flowchart illustrating a method for forming a fine pattern according to an embodiment of the present invention.
2 is a block diagram of a fine pattern forming apparatus according to a first embodiment of the present invention.
3 is a block diagram of a fine pattern forming apparatus according to a second embodiment of the present invention.
4 is a configuration diagram of a fine pattern forming apparatus according to a third embodiment of the present invention.
5 is a configuration diagram of a fine pattern forming apparatus according to a fourth embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and the same or similar components are denoted by the same reference numerals throughout the specification.

1 is a flowchart illustrating a method for forming a fine pattern according to an embodiment of the present invention. Referring to FIG. 1, the method for forming a fine pattern according to an embodiment includes a first step ST1 of preparing a substrate having a conductive thin film layer, and a second step ST2 of patterning the conductive thin film layer.

Hereinafter, specific steps for the method for forming a fine pattern will be described together while describing the device for forming a fine pattern in each embodiment. 2 is a block diagram of a fine pattern forming apparatus according to a first embodiment of the present invention. 2, the fine pattern forming apparatus 100 according to the first embodiment includes an uncoiler 10, a patterning unit 20, and a recoiler 30.

The uncoiler 10 is configured to continuously feed the substrate 11 on the strip. At this time, the substrate 11 to be supplied has a conductive thin film layer 12 on one surface. The conductive thin film layer 12 may be formed of ITO, Ag, Al, or the like.

The patterning unit 20 is configured to pattern the conductive thin film layer 12 on the substrate 11 supplied from the uncoiler 10 into a set conductive thin film pattern. That is, the patterning process may proceed continuously.

For example, the patterning unit 20 may be formed between the roll-to-roll offset printing unit 21, the etching unit 22, the cleaning unit 23, and the respective process units for printing the photoresist PR on the conductive thin film layer 12. Air knives 241, 242, 243 provided.

The roll-to-roll offset printing unit 21 fills the photoresist PR with the pattern of the pattern roll 211 using the blade 220, and blankets the photoresist PR filled with the pattern of the pattern roll 211. The first pattern P1 of the blanket roll 212 is transferred to the second pattern 212 in the first pattern P1, and the substrate 11 is moved between the blanket roll 212 and the support roll 213. Transfer to a second pattern to form a second pattern (P2). The air knife 241 backs the second pattern P2 transferred onto the conductive thin film layer 12 via the roll-to-roll offset printing unit 21.

The etching unit 22 forms the third pattern P3 corresponding to the second pattern P2 by etching the conductive thin film layer 12 of the substrate 11 via the air knife 241. That is, the third pattern P3 is formed of a conductive thin film. The air knife 242 removes the etching liquid E remaining on the third and second patterns P3 and P2 via the etching unit 22.

The cleaning unit 23 cleans and removes the second pattern P2 formed of the photoresist PR on the third pattern P3 of the substrate 11 via the air knife 242 with the cleaning liquid C. do. Therefore, the third pattern P3 remains on the substrate 11. The air knife 243 removes the cleaning liquid C remaining on the third pattern P3 via the cleaning unit 23.

The recoiler 30 is discharged via the cleaning unit 23 and the air knife 243 of the patterning unit 20 so as to continuously rewind the substrate 11 having the third pattern P3 formed of a conductive thin film. It is composed.

Therefore, in the case of forming the fine pattern with the fine pattern forming apparatus 100 of the first embodiment, the first step (ST1) to form a conductive thin film layer 12 on the substrate by sputtering a conductive material on the substrate 11, the uncoiler The base material 11 is supplied in the roll state of (10).

The second step ST2 transfers the first pattern P1 of the photoresist PR onto the conductive thin film layer 12 in the second pattern P2 on the conductive thin film layer 12 in a roll-to-roll offset manner. The second pattern P2 of the photoresist is back-baked at 241, and the conductive thin film layer 12 is etched according to the second pattern P2 by the etching portion 22 to form the third pattern P3 of the conductive thin film. The third pattern P3 is formed on the base material 11 by forming and washing the second pattern P2 with the cleaning part 23.

Thus, by forming the conductive thin film layer 12 in the base material 11 and patterning the conductive thin film layer 12, the third pattern P3 of the conductive thin film can be finely formed in the base material 11.

Various embodiments of the present invention will be described below. The same configuration as the first embodiment and the previously described embodiment will be omitted, and different configurations will be described.

3 is a block diagram of a fine pattern forming apparatus according to a second embodiment of the present invention. Referring to FIG. 3, the fine pattern forming apparatus 200 of the second embodiment includes a mask spray printing portion 41 in the patterning portion 40.

That is, in the second embodiment, the mask spray printing portion 41 of the patterning portion 40 is configured to pattern print the photoresist on the conductive thin film layer 12. The mask spray printing unit 41 is sprayed on the conductive thin film layer 12 by spraying a photoresist on the mask 411 and the mask 411 having a set pattern and disposed on the conductive thin film layer 12 of the traveling substrate 11. The spray head 412 prints the second pattern P22 of the photoresist. The air knife 241 backs the second pattern P22 transferred onto the conductive thin film layer 12 via the mask spray printing unit 41.

In the fine pattern forming method using the fine pattern forming apparatus 200 of the second embodiment, the second step is to pass the second pattern P2 of the photoresist PR on the conductive thin film layer 12 by a mask spray method. 12), the photoresist PR second pattern P22 is backed with an air knife 241, and the conductive thin film layer 12 is etched along the twenty-second pattern P22 by the etching unit 22. As a result, the third pattern P23 of the conductive thin film is formed, and the second pattern P22 is cleaned and removed by the cleaning unit 23, thereby forming the third pattern P23 on the substrate 11.

That is, the air knife 242 removes the etching liquid E remaining on the third and second patterns P23 and P22 via the etching unit 22. The air knife 243 removes the cleaning liquid C remaining on the third pattern P23 via the cleaning unit 23.

4 is a configuration diagram of a fine pattern forming apparatus according to a third embodiment of the present invention. Referring to FIG. 4, the fine pattern forming apparatus 300 of the third embodiment includes a laser pattern portion 51 in the patterning portion 50.

That is, in the third embodiment, the uncoiler 310 supplies the substrate 11 coated with the photoresist layer 13 to the conductive thin film layer 12. The laser pattern portion 51 of the patterning portion 50 includes a laser head 511 for patterning the photoresist layer 13 formed on the conductive thin film layer 12 of the substrate 11 traveling. The air knife 241 backs the second pattern P32 patterned on the conductive thin film layer 12 via the laser pattern portion 51.

In the fine pattern forming method using the fine pattern forming apparatus 300 of the third embodiment, the first step is to form a conductive thin film layer 12 on the substrate 11 by sputtering a conductive material on the substrate 11, the conductive thin film layer A photoresist is coated on (12) to form a photoresist layer (13) on the conductive thin film layer (12), and the substrate (11) is supplied in a roll state.

In the second step, the photoresist layer 13 is patterned into the second pattern P32 by the laser method on the conductive thin film layer 12, and the second pattern P32 is backed by the air knife 241. 22 to etch the conductive thin film layer 12 and to clean and remove the second pattern P32 of the photoresist with the cleaning part 23 to form the third pattern P33 of the conductive thin film on the substrate 11. do.

That is, the air knife 242 removes the etching liquid E remaining on the third and second patterns P33 and P32 via the etching unit 22. The air knife 243 removes the cleaning liquid C remaining on the third pattern P33 via the cleaning unit 23.

5 is a configuration diagram of a fine pattern forming apparatus according to a fourth embodiment of the present invention. Referring to FIG. 5, the micropattern forming apparatus 400 of the fourth embodiment includes a mask ultraviolet pattern part 61 and a developing part 62 in the patterning part 60.

That is, in the fourth embodiment, the uncoiler 410 supplies the substrate 11 coated with the photoresist layer 13 to the conductive thin film layer 12. The mask ultraviolet pattern portion 61 of the patterning portion 60 may pattern the ultraviolet ray lamp 611 and the pattern mask surrounding the photoresist layer 13 formed on the conductive thin film layer 12 of the substrate 11 that travels. 612. The developing unit 62 removes the exposed portion of the photoresist layer 13 to form the second pattern P42 of the photoresist. The air knife 241 removes the developing solution D remaining on the second pattern P42 via the developing unit 62.

In the second step, the photoresist layer 13 is patterned with the second pattern P42 by the mask UV pattern part 61 and the developing part 62 on the conductive thin film layer 12, and the developer is removed by the air knife 241. By etching the conductive thin film layer 12 with the etching portion 22 to form a third pattern P43 of the conductive thin film, and cleaning and removing the second pattern P42 of the photoresist with the cleaning portion 23, The third pattern P43 is formed on the substrate 11.

That is, the air knife 242 removes the etching liquid E remaining on the third and second patterns P43 and P42 via the etching unit 22. The air knife 243 removes the cleaning liquid C remaining on the third pattern P43 via the cleaning unit 23.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, And it goes without saying that the invention belongs to the scope of the invention.

10, 310, 410: uncoiler 11: description
12: conductive thin film layer 13: photoresist layer
20: patterning portion 21: roll to roll offset printing portion
22: etching part 23: cleaning part
30: recoiler 40, 50, 60: patterning part
41: mask spray printing portion 51: laser pattern portion
61: mask ultraviolet ray pattern portion 62: developing portion
100, 200, 300, 400: fine pattern forming apparatus
211: pattern roll 212: blanket roll
213: support rolls 241, 242, 243: air knife
220: blade 411: mask
511: laser head 611: ultraviolet lamp
612: Pattern Mask C: Cleaning Liquid
D: Developer E: Etch
PR: photoresist P1: first pattern
P2, P22, P32, P42: second pattern P3, P23, P33, P43: third pattern

Claims (11)

Preparing a substrate having a conductive thin film layer; And
A second step of patterning the conductive thin film layer
Including;
In the first step,
Coating a photoresist on the conductive thin film layer to form a photoresist layer on the conductive thin film layer, to supply the substrate in a roll state.
delete delete The method of claim 1,
In the first step,
The conductive thin film layer is formed on the substrate by sputtering a conductive material on the substrate.
5. The method of claim 4,
The second step comprises:
The photoresist layer is patterned on the conductive thin film layer by any one of a laser method and a mask ultraviolet light method.
Performing any one of a process of backing a photoresist pattern and a process of developing an exposed portion of the photoresist layer to form a photoresist pattern,
Etching the conductive thin film layer,
By cleaning the photoresist pattern,
A fine pattern formation method for forming a conductive thin film pattern.
delete An uncoiler for supplying a substrate having a conductive thin film layer;
A patterning unit patterning the conductive thin film layer on the substrate supplied to the uncoiler; And
Recoiler rewinding the substrate having the conductive thin film pattern discharged from the patterning portion
Including;
Wherein the patterning portion comprises:
A roll-to-roll offset printing unit for printing a photoresist on the conductive thin film layer;
Air knife for backing photoresist pattern,
An etching part for etching the conductive thin film layer of the substrate via the air knife;
A cleaning part for cleaning the photoresist pattern of the substrate via the etching part
Fine pattern forming apparatus comprising a.
An uncoiler for supplying a substrate having a conductive thin film layer;
A patterning unit patterning the conductive thin film layer on the substrate supplied to the uncoiler; And
Recoiler rewinding the substrate having the conductive thin film pattern discharged from the patterning portion
Including;
Wherein the patterning portion comprises:
A mask spray printing unit for pattern printing a photoresist on the conductive thin film layer,
Air knife for backing photoresist pattern,
An etching portion for etching the conductive thin film layer of the substrate via the air knife, and
A cleaning part for cleaning the photoresist pattern of the substrate via the etching part
Fine pattern forming apparatus comprising a.
An uncoiler for supplying a substrate having a conductive thin film layer;
A patterning unit patterning the conductive thin film layer on the substrate supplied to the uncoiler; And
Recoiler rewinding the substrate having the conductive thin film pattern discharged from the patterning portion
Including;
The uncoiler,
Fine pattern forming apparatus for supplying a substrate coated with a photoresist layer to the conductive thin film layer.
10. The method of claim 9,
Wherein the patterning portion comprises:
A laser pattern portion for patterning the photoresist layer on the conductive thin film layer;
Air knife for backing photoresist pattern,
An etching portion for etching the conductive thin film layer of the substrate via the air knife, and
Cleaning the photoresist pattern of the substrate via the etching portion Three governments
Fine pattern forming apparatus comprising a.
An uncoiler for supplying a substrate having a conductive thin film layer;
A patterning unit patterning the conductive thin film layer on the substrate supplied to the uncoiler; And
Recoiler rewinding the substrate having the conductive thin film pattern discharged from the patterning portion
Including;
Wherein the patterning portion comprises:
A mask ultraviolet pattern portion for patterning and exposing a photoresist to the conductive thin film layer,
A developing part for developing the exposed portion of the photoresist layer to form a photoresist pattern;
An etching portion for etching the conductive thin film layer of the substrate via the developing portion, and
A cleaning part for cleaning the photoresist pattern of the substrate via the etching part
Fine pattern forming apparatus comprising a.
KR1020130013422A 2013-02-06 2013-02-06 Fineness patterning method and apparatus thereof KR101321103B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170014272A (en) * 2015-07-29 2017-02-08 주식회사 서남 method for manufacturing ceramic wire and manufacture apparatus of the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11112126A (en) * 1997-10-06 1999-04-23 Matsushita Electric Ind Co Ltd Manufacture of minute pattern
KR20110024881A (en) * 2009-09-03 2011-03-09 엘지전자 주식회사 Manufacturing method of a master mold for forming micro pattern on a film applied to outside of appliances and manufacturing apparatus and method of the film using the master mold and appliances to which the micro pattern film is applied

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11112126A (en) * 1997-10-06 1999-04-23 Matsushita Electric Ind Co Ltd Manufacture of minute pattern
KR20110024881A (en) * 2009-09-03 2011-03-09 엘지전자 주식회사 Manufacturing method of a master mold for forming micro pattern on a film applied to outside of appliances and manufacturing apparatus and method of the film using the master mold and appliances to which the micro pattern film is applied

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170014272A (en) * 2015-07-29 2017-02-08 주식회사 서남 method for manufacturing ceramic wire and manufacture apparatus of the same
KR101719275B1 (en) * 2015-07-29 2017-04-04 주식회사 서남 method for manufacturing ceramic wire and manufacture apparatus of the same

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