KR101302550B1 - Liquid crystal display device and method of fabricating the same - Google Patents

Abstract

According to the present invention, a patterned layer made of an organic insulating material is provided by providing a first layer and a second circular protrusion having a double layer structure corresponding to the patterned spacer with a sufficient exposure interval on an array substrate facing the color filter substrate on which the patterned spacer is formed. Provided are a liquid crystal display device having a structure capable of preventing poor touch and gravity failure of a spacer, and a manufacturing method thereof.

In this case, the method of manufacturing the array substrate for the liquid crystal display device having the circular protrusion of the double layer structure by the four mask process is proposed so that an additional mask process is not required.

Patterned spacer, Circular protrusion, Bad touch, Bad gravity

Description

Liquid crystal display device and method of manufacturing the same {Liquid crystal display device and method of fabricating the same}

1 is a three-dimensional view of a portion of a general liquid crystal display device.

2 is a plan view of a portion of a conventional liquid crystal display device having a patterned spacer.

3 is a cross-sectional view taken along the line III-III of FIG. 2;

4 is a partial plan view of a liquid crystal display device having a patterned spacer according to an exemplary embodiment of the present invention.

5 is a cross-sectional view taken along the line V-V of FIG. 4.

6A through 6E are cross-sectional views illustrating a process of manufacturing a color filter substrate for a liquid crystal display device having a patterned spacer according to an exemplary embodiment of the present invention.

7A to 7F are cross-sectional views illustrating a process of manufacturing an array substrate for a liquid crystal display device having a circular protrusion according to an exemplary embodiment of the present invention.

Description of the Related Art

110: array substrate 113: gate wiring

115: gate electrode 117: gate insulating film

120: semiconductor layer 123: first circular protrusion

125: triple layer structure data wiring 128: source electrode

130: drain electrode 133: second circular protrusion

140: protective layer 143: drain contact hole

147: pixel electrode 150: color filter substrate

153: Black Matrix

156a, 156b, 156c: Red, Green, Blue Color Filter Pattern

163: patterned spacer 170: liquid crystal layer

P: pixel area PrA: circular protrusion forming part

TrA: Switching Area Tr: Thin Film Transistor

The present invention relates to a liquid crystal display device, and more particularly, to a liquid crystal display device having a patterned spacer and a method of manufacturing the same.

Recently, liquid crystal displays have been spotlighted as next generation advanced display devices having low power consumption, good portability, high technology value, and high added value.

Among the liquid crystal display devices, an active matrix liquid crystal display device having a thin film transistor, which is a switching element that can control voltage on / off for each pixel, has the best resolution and video performance. It is attracting attention.

In general, an LCD device forms an array substrate and a color filter substrate through an array substrate manufacturing process for forming a thin film transistor and a pixel electrode, and a color filter substrate manufacturing process for forming a color filter and a common electrode, respectively. It completes through the liquid crystal cell process through a liquid crystal between them.

FIG. 1 is a three-dimensional view of a portion of a general liquid crystal display, and is shown centering on an active region defined as a region in which a liquid crystal is driven.

As shown in the drawing, the general liquid crystal display device 1 is spaced apart from each other at a predetermined interval so that the upper color filter substrate 20 and the lower array substrate 10 face each other, and the color filter substrate and the array substrates 20 and 10 are opposite to each other. ) Is interposed between the liquid crystal layer 30.

A plurality of gates and data lines 13 and 15 cross each other on the lower substrate 10, and a thin film transistor Tr is formed at a point where the gates and data lines 13 and 15 cross each other. A pixel electrode 17 connected to the thin film transistor Tr is formed in the pixel area P defined as an area where the gate and the data lines 13 and 15 intersect.

The color filter layer 23 and the common electrode 27 are sequentially formed in the upper substrate 20. Although not shown in the drawing, the color filter layer 23 is a color filter for transmitting only light of a specific wavelength band and a black matrix (not shown) positioned at the boundary of the color filter to block light on an area where the arrangement of liquid crystals is not controlled. It is composed.

In the above-described configuration of the liquid crystal display device, although not shown in the drawing, in order to maintain a constant cell gap between the two substrates 10 and 20, a seal pattern (not shown) is formed at an edge of the two substrates 10 and 20. The two substrates 10 and 20 are provided with ball spacers having a constant diameter. The ball spacer is generally formed on the array substrate 10 or the front surface of the color filter substrate 20 through a scattering process of a spherical material having a predetermined size, but is not evenly distributed on the entire surface of the substrate during the spreading process. Problems such as defects caused by agglomeration of spacers that are not generated and coating of light in the pixel region P are generated, such as light leakage defects.

Therefore, in order to solve the problem caused by such a ball spacer (ball spacer) in recent years, patterned spacers that can be formed on the array substrate 10 or the color filter substrate 20 to have a uniform distribution of a uniform shape ( patterned spacer) has been proposed.

FIG. 2 is a partial plan view of a conventional liquid crystal display device having a patterned spacer, and FIG. 3 is a cross-sectional view taken along the cutting line III-III of FIG. 2.

Referring first to FIG. 2, as shown, a gate wiring 43 is formed on the array substrate 40 in a horizontal direction, and the data wiring 55 intersects with the gate wiring 43 in a vertical direction. Formed. The two wires 43 and 55 intersect to define the pixel area P, and correspond to the red, green, and blue color filter patterns 76a, 76b, and 76c provided on the color filter substrate 70. Thus, red, green, and blue pixels are sequentially formed. In the pixel region P, the gate electrode 45 connected to the gate line 43 and the source electrode 58 branched from the data line 55 are spaced apart from the source electrode 58 by a predetermined distance. The drain electrode 60 is formed. In addition, the drain electrode 60 is connected to the upper pixel electrode 67 and the drain contact hole 65. The gate electrode 45 and the source and drain electrodes 58 and 60 together with the lower semiconductor layer 50 form a thin film transistor Tr, which is a switching element.

In addition, when the liquid crystal panel is formed by bonding the two substrates 40 and 70 to the active region AA including the plurality of pixel regions having red, green, and blue colors, the active region AA may be fixed with the upper color filter substrate 70. Patterned spacers 83 for gap formation are spaced at regular intervals and are repeatedly formed. In this case, the patterned spacers 83 may be formed to be spaced apart from each other on the gate line 43 instead of the pixel area P displaying the image in order to prevent light leakage. .

Next, a cross-sectional structure of a liquid crystal display device having a conventional patterned spacer will be briefly described with reference to FIG.

First, a gate electrode 45 and a gate wiring 43 are formed on the array substrate 40, and a gate insulating film 47 is formed on the entire surface of the gate wiring 43. In addition, a semiconductor layer 50 including an active layer 50a and an ohmic contact layer 50b is formed on the gate insulating layer 47 to correspond to the gate electrode 45. The source and drain electrodes 58 and 60 are formed to be in contact with the ohmic contact layer 50b and spaced apart from each other with the gate electrode 45 interposed therebetween. In addition, a passivation layer 63 is formed on the source and drain electrodes 58 and 60 and the exposed gate insulating layer 47, and a transparent conductive material is deposited on the passivation layer 63 so that the pixel electrode 67 is formed. It is formed in contact with the drain electrode 60 through the drain contact hole (65).

Next, in the color filter substrate 70 positioned to face the array substrate 40 described above, a black matrix 73 having a lattice form having a plurality of openings is formed on the lower surface thereof. Blue color filter patterns 76a, 76b, and 76c are sequentially arranged, and a color filter layer 76 is formed. A common electrode 79 made of a transparent conductive material is formed under the color filter layer 76. A plurality of patterned spacers 83 are formed to be in contact with the common electrode 79 and the protective layer 63 on the lower array substrate 40 at the same time.

In this case, although not shown in the drawings, an alignment layer for initial alignment of the liquid crystals is formed on the protective layer 63 of the array substrate 40 and the common electrode 79 of the color filter substrate 70, respectively. The liquid crystal layer 90 is formed by interposing liquid crystal in the region between the alignment films of the substrates 40 and 70.

In the liquid crystal display device 35 having the patterned spacers 83 as described above, the patterned spacers 83 may be formed on any one of the array substrate 40 or the color filter substrate 70. However, it is usually formed on the color filter substrate 70 for the convenience of the process. The reason is that the array substrate 40 and the color filter substrate 70 are separately processed in the manufacturing process of the liquid crystal display device 35, and then the two substrates 40 and 70 are bonded to each other. This is because the patterned spacers 83 are formed on the color filter substrate 70 having a relatively simple process so that production assistance with the array substrate 40 can be achieved.

However, in the liquid crystal display device 35 having the patterned spacer 83 as described above, a gravity failure occurs in which the liquid crystal is concentrated in the lower gravity direction in a high temperature environment. The reason is that the expansion ratio of the patterned spacer 83 according to temperature is smaller than that of the liquid crystal and smaller than that of the glass substrate forming the base of the array substrate or the color filter substrate. This is because a gap is generated between the glass base substrate and the patterned spacer 83 when driving the cell gap of the liquid crystal display device 35.

In addition, the patterned spacer 83 is pressed even by a small pressure, there is a problem that does not maintain a uniform cell gap. This is because the elasticity of the patterned spacer 83 is relatively lower than that of the silica ball spacer. Accordingly, when the active region, which is an image display surface of the liquid crystal display, is touched, a touch defect such as a liquid crystal slide mark is generated. have.

In order to solve the above problems, in the present invention, the color filter substrate is provided with a patterned spacer, and the array substrate has a circular protrusion corresponding to the patterned spacer to prevent gravity defects and touch defects caused by the patterned spacer. It is an object of the present invention to provide a liquid crystal display device.

Another object of the present invention is to provide a method of manufacturing an array substrate for a liquid crystal display device having a protrusion structure by completing the array substrate having the circular protrusions by performing a four mask process.

In order to achieve the above object, a liquid crystal display device according to an embodiment of the present invention

A first substrate; A plurality of gate wirings formed on the first substrate; A plurality of data lines defining pixels by crossing the plurality of gate lines and a gate insulating layer therebetween; A thin film transistor provided at an intersection point of the gate wiring and the data wiring; First and second circular protrusions formed in a double layer structure having different first and second diameters from the same material as the material on which the data wiring is formed on the gate insulating layer; A protective layer covering the thin film transistor and the first and second circular protrusions and having a drain contact hole exposing the drain electrode; A pixel electrode contacting the drain electrode through the drain contact hole over the passivation layer; A second substrate facing the first substrate; A black matrix having an opening and configured to have a lattice shape corresponding to an area corresponding to the gate line and the data line under the second substrate; A color filter layer having periodic red, green, and blue patterns formed in the openings; A common electrode formed under the color filter layer; A patterned spacer formed below the common electrode to correspond to the first and second circular protrusions on the first substrate; And a liquid crystal layer interposed between the first and second substrates.

At this time, the first circular protrusion is characterized in that the amorphous material of the same material forming the semiconductor layer enhancement active layer of the thin film transistor, characterized in that, wherein the first diameter is preferably 8㎛ to 12㎛.

The second circular protrusion may have a double layer structure of impurity amorphous silicon and a metal material, which is the same material forming the ohmic contact layer among the semiconductor layers of the thin film transistor.

In addition, the second diameter is preferably 4㎛ 6㎛.

In addition, the width of the portion exposed by the second circular protrusion of the first circular protrusion is preferably 2㎛ to 3㎛.

In addition, an overcoat layer is further provided between the color filter layer and the common electrode.

In the method of manufacturing a liquid crystal display according to the present invention, a gate area and a data line intersect to define a pixel area, a switching area in which a thin film transistor is formed in the pixel area is defined, and a plurality of circular spaces spaced apart on the gate wire. Forming a plurality of gate wirings and a gate electrode branched from the respective gate wirings in each switching region on a first substrate having a protrusion region defined thereon; Forming a gate insulating film over the gate wiring and the gate electrode; A pure amorphous silicon layer, an impurity amorphous silicon layer, and a metal material layer are sequentially formed on the gate insulating layer, and patterned, thereby diverging a plurality of data lines having a triple layer structure intersecting the gate line, and branching from the data line. An active layer made of pure amorphous silicon is formed between a source electrode, a drain electrode spaced a predetermined distance from the source electrode, and the spaced source and drain electrodes, and a pure amorphous having a first diameter in the plurality of circular protrusion regions. Forming a first circular protrusion of silicon and a second circular protrusion of a double layer structure of impurity amorphous silicon and a metal material having a second diameter smaller than the first diameter above the first circular protrusion; Forming a protective layer having the data line, the source and drain electrodes, and a drain contact hole exposing the drain electrode over the first and second circular protrusions; Forming a pixel electrode in contact with the drain electrode for each pixel region on the passivation layer; Forming a black matrix having a plurality of openings under the second substrate corresponding to the first substrate and corresponding to the gate and data wirings; Forming a color filter layer having red, green, and blue patterns sequentially repeated in the plurality of openings; Forming a common electrode under the color filter layer; Forming a plurality of patterned spacers in a region corresponding to the first and second circular protrusions under the common electrode; And interposing the patterned spacer to correspond to the second circular protrusion after the liquid crystal is interposed between the first and second substrates.

In this case, the forming of the data line, the source and drain electrodes, and the first and second circular protrusions may be performed by sequentially depositing pure amorphous silicon, impurity amorphous silicon, and a metal material on the gate insulating layer in order, and then pure pure silicon layer and impurities. Forming an amorphous silicon layer and a metal material layer; Forming a photoresist layer over the metal material layer; In the regions where the data lines, the source and drain electrodes, and the second circular protrusions are to be formed on the photoresist layer, a transmissive region is formed, except for a spaced area between the source and drain electrodes and a region where the second circular protrusion is to be formed. Placing a mask such that a semi-transmissive region corresponds to a region where the circular protrusion is to be formed, and a blocking region corresponds to the other region, and exposing through the mask; By developing the exposed photoresist layer, a first photoresist pattern having a thick first thickness is formed to correspond to a region where the data line, the source and drain electrodes, and the second circular protrusion are to be formed, and a semi-transmissive region of the mask. A second photoresist pattern of a second thickness thinner than the first thickness is formed in the separation region between the source and drain electrodes corresponding to the first circular protrusion formation region outside the second circular protrusion region, and in other regions. Exposing the metal layer; Sequentially exposing the exposed metal layer, the impurity amorphous silicon layer and the pure amorphous silicon layer below to expose a gate insulating film, thereby forming a data line having a triple layer structure and a source drain pattern connected to the data line; Forming a first circular protrusion having a triple layer structure having a diameter; Removing the second photoresist pattern by performing dry etching on a substrate having a circular protrusion having the same diameter as the data line and the source drain pattern; Source and drain electrodes spaced apart from each other by sequentially etching the exposed metal layer and underlying impurity amorphous silicon layer by removing the second photoresist pattern, and an active layer of pure amorphous silicon between the spaced source and drain electrodes; Forming a second circular protrusion having a double layer structure having a second diameter smaller than the first diameter so that the circular protrusion forming region is exposed to the outside of the second circular protrusion; And removing the first photoresist pattern on the substrate on which the source and drain electrodes and the first and second circular protrusions are formed.

In addition, the first diameter is 8㎛ to 12㎛, the second diameter is preferably 4㎛ to 6㎛, the width of the first circular projection exposed to the outside of the second circular projection is 2㎛ to 3㎛ Is preferably.

The method may further include forming an overcoat layer between the color filter layer and the common electrode.

The method may further include forming a seal pattern along an edge of the first substrate or the second substrate.

The width of the first circular protrusion exposed to the outside of the second circular protrusion may be determined by adjusting the width of the semi-transmissive area of the mask.

Hereinafter, preferred embodiments according to the present invention will be described with reference to the drawings.

4 is a partial plan view of a liquid crystal display device having a patterned spacer according to an exemplary embodiment of the present invention, and FIG. 5 is a cross-sectional view taken along the cutting line V-V of FIG. 4.

First, in the liquid crystal display device 101 according to the exemplary embodiment of the present invention, the color filter substrate 150, which is the upper substrate, includes the gate wiring 113 and the data wiring () of the lower array substrate 110. A black matrix 153 is formed around each pixel area P to correspond to 125, and the red, green, and blue color filter patterns 156a, 156b, and 156c sequentially correspond to each pixel area P. FIG. ), A color filter layer 156 is formed.

In addition, a patterned spacer 163 having an appropriate area is formed under the black matrix 153 corresponding to the gate wiring 113 of the array substrate 110.

Next, a plurality of gate lines 113 extend in a horizontal direction in the lower array substrate 110 corresponding to the color filter substrate 150, and cross the plurality of gate lines 113 to form a pixel region ( P) and a plurality of data lines 125 are formed in the vertical direction, and the gate electrode 115 and the gate insulating film 117 and the semiconductor layer are provided as switching elements at intersections of the two lines 113 and 125. The thin film transistor Tr including the 120 and the source and drain electrodes 128 and 130 is formed.

In addition, the gate wiring 113 on the array substrate 110 corresponding to the patterned spacer 183 formed on the color filter substrate 150 more precisely above the gate insulating film 117 covering the gate wiring 113. Is the same material that forms the semiconductor layer 120 of the thin film transistor Tr and the source and drain electrodes 158 and 160 in the pixel region P. The first and second circular protrusions 123 having different diameters as islands are formed. , 133 is formed.

In this case, the first and second circular protrusions 123 and 133 may have a first diameter d1 of the first circular protrusion 123 made of a lower semiconductor material, and may have the source and drain electrodes 123 and 143 thereon. It is characterized in that it is formed larger than the second diameter (d2) of the second circular protrusion 133 made of a metal material.

The cross-sectional structure of the liquid crystal display device according to the present invention is further described.

First, referring to the cross-sectional structure of the color filter substrate 150, which is an upper substrate, a black matrix 153 having a lattice shape having an opening is formed below the transparent substrate 150, and the black matrix 153 and the exposed substrate are formed. A color filter layer 156 is formed in the lower portion of the opening, overlapping a portion of the black matrix 153 and sequentially arranged red, green, and blue color filter patterns 156a, 156b, and 156c. In addition, a common electrode 159 made of indium tin oxide (ITO) or indium zinc oxide (IZO), which is a transparent conductive material, is formed on the entire surface of the lower portion of the color filter layer 156. 159 is a patterned spacer 163 is formed. In this case, the patterned spacer 163 is formed in a portion corresponding to the gate wiring 113 of the lower array substrate 110.

Next, in the lower substrate, the array substrate 110 includes a gate wiring 113 and a gate electrode 115 branched from the gate wiring 113 on the transparent substrate 110. The gate insulating layer 117 is formed on the entire surface of the gate electrode 115.

In addition, in the switching element forming unit TrA, a semiconductor layer 120 including a pure amorphous silicon layer 120a and an impurity amorphous silicon layer 120b is formed on the gate insulating layer 117, and the semiconductor layer 120 is formed. The semiconductor layer 120 overlaps the impurity amorphous silicon layer 120b, and the source and drain electrodes 128 and 130 are spaced apart from each other. In this case, the source electrode 128 is in contact with the data line 125 formed to define the pixel region P while crossing the gate line 113. The impurity amorphous silicon layer 120b is removed from the source and drain electrodes 128 and 130 to expose the pure amorphous silicon layer 120a. In this case, the data line 125 is formed by simultaneously patterning a pure amorphous silicon layer, an impurity amorphous silicon layer, and a metal material layer formed to form the semiconductor layer 120 in accordance with the characteristics of the present invention which performs a four mask process. It is characterized by having a triple layer structure.

In addition, a first circular protrusion 123 having a first diameter d1 as a semiconductor material of amorphous silicon is formed on the gate insulating layer 117 corresponding to the gate wiring 113, and the first circular protrusion ( The second circular protrusion 133 having a second diameter d2 smaller than the first diameter d1 and having the same center as that of the first circular protrusion 123 is formed at an upper portion thereof. And the same metal material having the drain electrodes 128 and 130 formed in a double layer structure.

In this case, in the first and second circular protrusions 123 and 133 configured to overlap each other, the first diameter d1 has a value of about 8 μm to 12 μm, and the second diameter d2 is 4 μm. By having a value of about to 6㎛ having a width d3 of the area of the first circular protrusion 124 exposed to the outside of the second circular protrusion 133 is formed to have a value of about 2㎛ to 3㎛.

The first and second circular protrusions 124 and 133 on the array substrate 110 corresponding to the patterned spacer 163 may have different sizes, that is, the first diameter d1 and the second diameter having different sizes. 2 μm of a portion exposed to the outside of the second circular protrusion 133 having the second diameter d2 of the first circular protrusion 123 having the lower first diameter d1 and having a lower diameter d2. Forming the width d3 having a value of about 3 μm to about 3 μm may occur when the color filter substrate 150 and the array substrate 110 are bonded to each other by the bonding error. The second circular protrusion 133 having the second diameter d2 may not correspond exactly. In this case, the portion exposed to the outside of the second circular protrusion 133 of the first circular protrusion 123 is sufficiently wide. As a result, the patterned spacer 163 does not come into contact with regions other than the first and second circular protrusions 124 and 133. By, it is to prevent the patterned spacer 163 is the first and by the second raising the contact density in contact with the portion on the other substrate other than the circular projection (124, 133) to reduce the force of gravity or touch margin.

In addition, although not shown in the drawings, the patterned spacers have a lower height than the patterned spacers, more precisely the first and the same, in order to prevent paint stains other than the patterned spacers contacting the circular protrusions 124 and 133 as described above. The first circular protrusion (not shown) having a height lower than the height of the patterned spacer 163 by the level of the second circular protrusion is exposed to the outside of the second circular protrusion 133 ( 124) is further formed to correspond to the region, which is configured not to contact the exposed portion of the first circular protrusion 124, unless the substrate is pressed. Therefore, when pressing occurs on the substrate, the pressing preventing patterned spacer (not shown) contacts the first circular protrusion 124 exposed to the outside of the second circular protrusion 133 to alleviate the pressing and quickly restore the original state. It will play a role.

Therefore, as described above, the first and second circular protrusions 124 and 133 having a double layer structure having different diameters d1 and d2 are formed. In this case, the first circular protrusion is exposed to the outside of the second circular protrusion. When the interval of the projections is small, the pressing prevention patterned spacers (not shown) are in contact with each other, and thus the structure cannot be alleviated. Therefore, the second circular projections 133 are exposed to the outside while the four mask process is performed to prevent them. One of the most characteristic aspects of the present invention is to sufficiently secure the space between the first circular protrusions 124.

Next, the data line 125 and the source and drain electrodes 128 and 130, the first and second circular protrusions 123 and 133, and the source and drain electrodes 128 and 130 of the triple layer structure are exposed. The protective layer 140 is formed on the entire surface over the amorphous silicon layer 120a. In this case, the passivation layer 140 includes a drain contact hole 143 exposing the lower drain electrode 130 to correspond to the switching region TrA in each pixel region P. The pixel electrode 147 is formed on the passivation layer 140 in P) by contacting the drain electrode 130 through the drain contact hole 143.

Next, the manufacturing method of the liquid crystal display device according to the present invention described above will be described.

6A to 6E are cross-sectional views illustrating the process of manufacturing a color filter substrate for a liquid crystal display device having a patterned spacer according to an exemplary embodiment of the present invention.

As shown in FIG. 6A, a metal material including chromium (Cr) or the like is deposited on the front surface of the transparent substrate 150, or after the resin or black resin including carbon material is coated on the front surface of the transparent substrate 150. By patterning this using a mask (not shown), a black matrix 153 having a lattice shape having a plurality of openings is formed.

Next, as shown in FIG. 6B, one of red, green, and blue, for example, red resists, for example, a red resist is spin coated and bar coated on the substrate 150 on which the black matrix 153 is formed. (bar coatinhg) and the like applied to the entire surface to form a red color filter layer (not shown), and then exposed through a mask (not shown) having a light transmission region and a blocking region, and developing the opening by A red color filter pattern 156a is formed to fill and be spaced apart from each other.

Next, as shown in FIG. 6C, the process proceeds in the same manner as the method of forming the red color filter pattern 156a, and the green and blue color filter patterns 156b and 156c are interposed between the black matrix 153 on the substrate 150. By sequentially forming in the openings of the color filter layer, the color filter layer 156 is formed in which the red, green, and blue color filter patterns 156a, 156b, and 156c are repeated periodically and sequentially.

Next, as shown in FIG. 6D, the common electrode 159 is formed on the entire surface by depositing indium tin oxide (ITO) or indium zinc oxide (IZO), which are transparent conductive materials, on the color filter layer 156. do. In this case, an overcoat layer (not shown) may be further formed between the color filter layer 156 and the common electrode 159 to protect the red, green, and blue color filter patterns 156a, 156b, and 156c and to compensate for the step difference. It may be. In this case, the overcoat layer (not shown) is preferably formed when the lower black matrix 153 is made of a resin or black resin.

Next, as shown in FIG. 6E, a colorless transparent photosensitive organic material, for example, photoacryl (photacryl) or benzocyclobutene (BCB), is thickly coated on the entire surface of the organic electrode layer (not shown). ) And patterning it using a mask (not shown) to form a plurality of patterned spacers 163 in the region overlapping with the black matrix 153, thereby providing a liquid crystal display having the patterned spacers 163. The color filter substrate 160 for an apparatus is completed. In this case, although not shown in the drawing, the patterned spacers 163 may be formed to have different heights, that is, a first height or a second height lower than the first height. This is because when the substrate is not pressed by the external array substrate, but the substrate is pressed due to a pressure from the outside, by forming a pattern preventing spacer (not shown) having a second height having a low height, The low-tension patterned spacer is in contact with the circular protrusion of the array substrate to alleviate the pressing and to be restored in a short time. In this case, the pressing preventing patterned spacer is preferably formed to be offset by the diameter of the second circular protrusion provided on the lower array substrate more precisely than the regular patterned spacer.

Next, a method of manufacturing the array substrate for a liquid crystal display device according to the present invention corresponding to the color filter substrate described above will be described with reference to FIGS. 7A to 7F. In this case, for convenience of description, an area in which the thin film transistor as a switching element is formed in each pixel area P is defined as a switching area TrA, and among the areas corresponding to the gate wiring, the color filter substrate when the liquid crystal display device is configured The region in which the first and second circular protrusions should be formed corresponding to the patterned spacers on the top is defined as the protrusion region PrA.

First, as shown in Figure 7a, by depositing a metal material on a transparent substrate 110 to form a metal layer (not shown), a photoresist having photosensitivity thereon is applied to the entire surface, and the photoresist Is exposed using a mask, and then developed, and then, a metal layer (not shown) exposed to the outside of the developed photoresist is etched, and a series of mask processes are performed to strip the photoresist. The gate wiring 113 extending in one direction is formed by patterning a metal layer (not shown), and at the same time, the gate electrode 115 branched from the gate wiring 113 is formed in the switching region TrA in each pixel region P. FIG. It forms (the 1st mask process).

Next, as shown in FIG. 7B, silicon oxide (SiO ₂ ) or silicon nitride (SiNx), which is an inorganic insulating material, is deposited on the entire surface of the gate wiring 113, the gate electrode 115, and the exposed substrate 110. To form a gate insulating film 117, and successively deposit amorphous silicon and a metal material mixed with pure amorphous silicon and impurities on the gate insulating film 117 to form a pure amorphous silicon layer 118 and an impurity amorphous silicon layer 119. ) And the metal material layer 122 are formed.

Next, as shown in FIG. 7C, the photoresist layer 181 is formed by applying photoresist on the metal material layer, and the transmission area TA for transmitting 100% of the exposed light and 100% blocking light. After the mask 191 including the blocking area (BA) and the transflective area (HTA) that can adjust the amount of light transmitted from 0% to 100% over the photoresist layer 181, the mask ( 191).

In this case, when the photoresist on which the photoresist layer 181 is formed is a negative type that remains when the photoresist receives light, a data line (not shown) and the switching region on the array substrate 110 may be present. The transmission region TA of the mask 191 overlaps the gate electrode 115 of the switching region TrA to correspond to a portion of the TrA in which the source and drain electrodes (not shown) are to be formed. A second circular protrusion made of a metal material among the regions exposed between the source and drain electrodes (not shown) (this is called a channel region ch) and the circular protrusion region PrA overlapping the gate wiring 113 ( The transflective area HTA of the mask 191 is used for the portion where the first circular protrusion (not shown) is to be formed except for the region overlapping with the other area, and the blocking area of the mask 191 is for the other areas. Position the mask 191 to correspond to BA) After Keane, and subjected to exposure. In this case, when the photoresist is a positive type tape, the positions corresponding to the array substrates of the transmissive area and the blocking area are changed to correspond to each other, and then the exposure is performed to expose the negative type photoresist. The same result as used is obtained.

Next, as described above, when the mask 191 is positioned on the array substrate 110 and subjected to exposure, the photoresist layer 181 is developed, and as shown in FIG. 7D, the mask (FIG. 7C). The first photoresist pattern 181a having a thick first thickness t1 remains in the region corresponding to the transmissive region (TA in FIG. 7C) of FIG. 191, and the semi-transmissive region of the mask (911 in FIG. 7B). A portion corresponding to (HTA of FIG. 7B) leaves a second photoresist pattern 181b having a second thickness t2 that is thinner than the first thickness t1, and blocks the mask (191 of FIG. 7C). The photoresist layer (181 in FIG. 7C) corresponding to the region (BA in FIG. 7C) is removed all of the time to expose the metal layer (122 in FIG. 7C).

Next, the metal layer (122 of FIG. 7C) exposed to the outside of the first and second photoresist patterns 181a and 181b, the impurity amorphous silicon layer (119 of FIG. 7C) and the pure amorphous silicon layer (FIG. 7C) below. By sequentially etching 118, each pixel region P is defined on the gate insulating layer 117 to intersect the gate wiring 113, and is patterned in the same shape to form a pure amorphous silicon pattern 125a and an impurity amorphous silicon pattern. A data line 125 having a triple layer structure of 125b and a metal pattern 125c is formed, and at the same time, in the switching region TrA, a source drain pattern having a triple layer structure (a state of being connected to the data line 125) 127 is formed, and in the circular projection region PrA, a circular pattern 123 having a triple layer structure having a first diameter d1 is formed under the second photoresist pattern 181b.

Next, as shown in FIG. 7E, an anisotropic dry etching process is performed on the substrate 110 on which the data line 125, the source drain pattern 127, and the circular pattern 123 are formed. The photoresist pattern (181b in FIG. 7D) is removed to expose the underlying metal layer. In this case, the thickness of the photoresist pattern 181a having the first thickness also becomes thin due to dry etching, but has a predetermined thickness and still remains on the substrate 110 after completion of the dry etching process.

Next, the second photoresist pattern (181b of FIG. 7D) is removed by the dry etching to sequentially remove and expose the exposed metal layer and the impurity amorphous silicon layer below the source to be spaced apart from each other in the switching region TrA. And forming drain electrodes 128 and 130, exposing the pure amorphous silicon layer 120a to the channel region ch spaced between the source and drain electrodes 128 and 130, and forming the drain electrodes 128 and 130 on the circular protrusion region PrA. A first circular protrusion 123 having a first diameter d1, part of which is exposed to pure amorphous silicon, is formed, and has a second diameter d2 thereon, and is made of impurity amorphous silicon and a metallic material. The second circular protrusion 133 of the double layer structure is formed.

In this case, the first circular protrusion 123 having the first diameter d1 exposed to the outside of the second circular protrusion 133 having the second diameter d2 has a width d3 of the exposed portion. It is characterized by being 2 micrometers-3 micrometers. The first exposed outside the second circular protrusion 133 by appropriately adjusting the width of the semi-transmissive region (HTA of FIG. 7C) in the mask (191 of FIG. 7C) before the exposure in the circular protrusion region PrA. The width d3 of the circular protrusion 123 may be adjusted. (Second mask process)

Next, as shown in FIG. 7F, a protective layer is deposited on the data line 125 and the source and drain electrodes 128 and 130 by depositing an inorganic insulating material (SiO ₂ ) or silicon nitride (SiNx). 140, and then, the protective layer 140 is patterned to form a drain contact hole 143 partially exposing the lower drain electrode 130. (Third mask process)

Next, as shown in FIG. 7G, indium-tin-oxide (ITO) or indium-zinc- which is a transparent conductive material over the protective layer 140 having the drain contact hole 143 exposing the drain electrode 130. The oxide (IZO) is deposited on the entire surface and patterned to form a pixel electrode 147 in contact with the drain electrode 130 through the drain contact hole 143 in each pixel region P (fourth mask process). The array substrate 110 is completed.

As shown in FIG. 5, the color filter substrate and the array substrate manufactured as described above are subjected to a cell process, that is, the two substrates are bonded together using an adhesive sealant and a liquid crystal is interposed between the two bonded substrates. A liquid crystal display device having first and second circular protrusions having a double layer structure having different diameters corresponding to the same patterned spacer and the patterned spacer is completed.

The liquid crystal display according to the embodiment of the present invention has an effect of improving gravity defects and poor touch by providing a double layer circular protrusion made of a harder material than an organic insulating material on an array substrate which is a lower substrate corresponding to a color filter substrate.

In addition, by providing a method of manufacturing the array substrate having a circular projection of the double-layer structure by a four mask process, it has the effect of reducing the manufacturing cost.

In addition, while manufacturing the array substrate by a four-mask process, the contact density of the patterned spacer is reduced by making the width of the first circular protrusion exposed to the outside of the second circular protrusion located on the upper part about 2 μm to 3 μm. .

Claims (15)

A first substrate; A plurality of gate wirings formed on the first substrate; A gate insulating film formed over the first substrate over the gate wiring; A plurality of data lines defining pixels by crossing the plurality of gate lines over the gate insulating layer; A thin film transistor provided at an intersection point of the gate line and the data line and including a semiconductor layer including an active layer and an ohmic contact layer; The gate insulating layer is sequentially stacked on the gate insulating layer to correspond to the gate line, and has a double layer structure having different first and second diameters from the same material as the material of the semiconductor layer and the data line. First and second circular protrusions; A protective layer covering the thin film transistor and the first and second circular protrusions and having a drain contact hole exposing a drain electrode of the thin film transistor; A pixel electrode contacting the drain electrode through the drain contact hole over the passivation layer; A second substrate facing the first substrate; A black matrix having an opening and configured to have a lattice shape corresponding to an area corresponding to the gate line and the data line under the second substrate; A color filter layer having periodic red, green, and blue patterns formed in the openings; A common electrode formed under the color filter layer; A patterned spacer formed below the common electrode to correspond to the first and second circular protrusions on the first substrate; Liquid crystal layer interposed between the first and second substrates And a width of the first circular protrusion exposed to the outside of the second circular protrusion is 2 μm to 3 μm. The method of claim 1, And the first circular protrusion having a first diameter is made of pure amorphous silicon, the same material forming the active layer. The method of claim 2, The first diameter is a liquid crystal display device of 8㎛ to 12㎛. The method of claim 1, And the second circular protrusion having a second diameter has a double layer structure of impurity amorphous silicon, which is the same material forming the ohmic contact layer, and the same metal material that forms the data line. 5. The method of claim 4, The second diameter is a liquid crystal display device of 4㎛ 6㎛. delete The method of claim 1, And an overcoat layer between the color filter layer and the common electrode. On the first substrate where a gate line and a data line cross each other to define a pixel region, and a switching region in which a thin film transistor is formed in the pixel region is defined, and a plurality of circular protrusion regions spaced apart from each other on the gate line are defined. Forming a plurality of gate wirings and gate electrodes branched from the respective gate wirings in respective switching regions; Forming a gate insulating film over the first substrate over the gate wiring and the gate electrode; A pure amorphous silicon layer, an impurity amorphous silicon layer, and a metal material layer are sequentially formed on the gate insulating layer, and patterned, thereby diverging a plurality of data lines having a triple layer structure intersecting the gate line, and branching from the data line. An active layer made of pure amorphous silicon is formed between the source electrode, the drain electrode spaced a predetermined distance from the source electrode, and the spaced source and drain electrodes, and a first diameter is formed in a circle shape in the plurality of circular protrusion regions. Forming a first circular protrusion of pure amorphous silicon having a second circular protrusion of a double layer structure of impurity amorphous silicon and a metal material having a second diameter smaller than the first diameter above the first circular protrusion; Forming a protective layer having the data line, the source and drain electrodes, and a drain contact hole exposing the drain electrode over the first and second circular protrusions; Forming a pixel electrode in contact with the drain electrode for each pixel region on the passivation layer; Forming a black matrix having a plurality of openings under the second substrate corresponding to the first substrate and corresponding to the gate and data wirings; Forming a color filter layer having red, green, and blue patterns sequentially repeated in the plurality of openings; Forming a common electrode under the color filter layer; Forming a plurality of patterned spacers in a region corresponding to the first and second circular protrusions under the common electrode; Interposing the patterned spacer to correspond to the second circular protrusion after the liquid crystal is interposed between the first and second substrates; The first and second circular protrusions have a side end thereof in a stepped shape, and the width of the first circular protrusion exposed to the outside of the second circular protrusion is 2 μm to 3 μm. Method of preparation. 9. The method of claim 8, Forming the data line, the source and drain electrodes, and the first and second circular protrusions may include Forming a pure amorphous silicon layer, an impurity amorphous silicon layer, and a metal material layer by sequentially depositing pure amorphous silicon, impurity amorphous silicon, and a metal material over the gate insulating film; Forming a photoresist layer over the metal material layer; In the regions where the data lines, the source and drain electrodes, and the second circular protrusions are to be formed on the photoresist layer, a transmissive region is formed, except for a spaced area between the source and drain electrodes and a region where the second circular protrusion is to be formed. Placing a mask so that a semi-transmissive region corresponds to a region to form the circular protrusion, and a blocking region corresponds to the other region, and exposing through the mask; By developing the exposed photoresist layer, a first photoresist pattern having a thick first thickness is formed to correspond to a region where the data line, the source and drain electrodes, and the second circular protrusion are to be formed, and a semi-transmissive region of the mask. A second photoresist pattern of a second thickness thinner than the first thickness is formed in the separation region between the source and drain electrodes corresponding to the first circular protrusion formation region outside the second circular protrusion region, and in other regions. Exposing the metal material layer; Sequentially exposing the exposed metal material layer, the impurity amorphous silicon layer and the pure amorphous silicon layer below to expose the gate insulating film, and thereby forming a data line having a triple layer structure and a source drain pattern connected to the data line. Forming a first circular protrusion of a triple layer structure having a first diameter; Removing the second photoresist pattern by performing dry etching on a substrate having a circular protrusion having the same diameter as the data line and the source drain pattern; Source and drain electrodes spaced apart from each other by sequentially etching the exposed metal layer and underlying impurity amorphous silicon layer by removing the second photoresist pattern, and an active layer of pure amorphous silicon between the spaced source and drain electrodes; Forming a second circular protrusion having a double layer structure having a second diameter smaller than the first diameter so that the circular protrusion forming region is exposed to the outside of the second circular protrusion; Removing the first photoresist pattern on the substrate on which the source and drain electrodes and the first and second circular protrusions are formed; Method of manufacturing a liquid crystal display device comprising a. 9. The method of claim 8, The first diameter is a method of manufacturing a liquid crystal display device of 8㎛ 12㎛. 11. The method of claim 10, The second diameter is a manufacturing method of the liquid crystal display device 4㎛ 6㎛. delete 9. The method of claim 8, And forming an overcoat layer between the color filter layer and the common electrode. 9. The method of claim 8, And forming a seal pattern along the edge of the first substrate or the second substrate. The method of claim 9, The width of the first circular projection exposed to the outside of the second circular projection is determined by adjusting the width of the semi-transmissive area of the mask.

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