KR101254107B1 - 다이나믹 표면 어닐링 프로세싱을 위한 흡수층 - Google Patents

다이나믹 표면 어닐링 프로세싱을 위한 흡수층 Download PDF

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KR101254107B1
KR101254107B1 KR1020067008112A KR20067008112A KR101254107B1 KR 101254107 B1 KR101254107 B1 KR 101254107B1 KR 1020067008112 A KR1020067008112 A KR 1020067008112A KR 20067008112 A KR20067008112 A KR 20067008112A KR 101254107 B1 KR101254107 B1 KR 101254107B1
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KR
South Korea
Prior art keywords
substrate
layer
electromagnetic radiation
amorphous carbon
depositing
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KR1020067008112A
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English (en)
Korean (ko)
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KR20060108631A (ko
Inventor
루크 반 어트라이베
크리스 디. 벤처
딘 제닝스
하이판 리앙
아브히라쉬 제이. 마이어
마르크 얌
웬디 에이치. 예
리차드 에이. 브로우
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Priority claimed from US10/679,189 external-priority patent/US7109087B2/en
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20060108631A publication Critical patent/KR20060108631A/ko
Application granted granted Critical
Publication of KR101254107B1 publication Critical patent/KR101254107B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020067008112A 2003-10-03 2004-10-01 다이나믹 표면 어닐링 프로세싱을 위한 흡수층 KR101254107B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US10/679,189 US7109087B2 (en) 2003-10-03 2003-10-03 Absorber layer for DSA processing
US10/679,189 2003-10-03
US10/758,758 US7262106B2 (en) 2003-10-03 2004-01-15 Absorber layer for DSA processing
US10/758,758 2004-01-15
PCT/US2004/032151 WO2005036627A1 (fr) 2003-10-03 2004-10-01 Couche absorbante pour traitement de recuit de surface dynamique

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020127000249A Division KR101292314B1 (ko) 2003-10-03 2004-10-01 다이나믹 표면 어닐링 프로세싱을 위한 흡수층

Publications (2)

Publication Number Publication Date
KR20060108631A KR20060108631A (ko) 2006-10-18
KR101254107B1 true KR101254107B1 (ko) 2013-04-12

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ID=34437408

Family Applications (1)

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KR1020067008112A KR101254107B1 (ko) 2003-10-03 2004-10-01 다이나믹 표면 어닐링 프로세싱을 위한 흡수층

Country Status (5)

Country Link
US (1) US20070243721A1 (fr)
EP (1) EP1676300B1 (fr)
JP (1) JP2007507900A (fr)
KR (1) KR101254107B1 (fr)
WO (1) WO2005036627A1 (fr)

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US7335611B2 (en) * 2005-08-08 2008-02-26 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US7588990B2 (en) * 2006-08-31 2009-09-15 Applied Materials, Inc. Dynamic surface annealing of implanted dopants with low temperature HDPCVD process for depositing a high extinction coefficient optical absorber layer
US7867868B2 (en) 2007-03-02 2011-01-11 Applied Materials, Inc. Absorber layer candidates and techniques for application
US20090093128A1 (en) * 2007-10-08 2009-04-09 Martin Jay Seamons Methods for high temperature deposition of an amorphous carbon layer
US8674257B2 (en) 2008-02-11 2014-03-18 Applied Materials, Inc. Automatic focus and emissivity measurements for a substrate system
US7947584B2 (en) * 2008-05-02 2011-05-24 Applied Materials, Inc. Suitably short wavelength light for laser annealing of silicon in DSA type systems
CN102144309A (zh) * 2008-07-08 2011-08-03 桑迪士克3D有限责任公司 基于碳的电阻率-切换材料及其形成方法
WO2010078467A1 (fr) * 2008-12-31 2010-07-08 Sandisk 3D, Llc Modulation de résistivité dans des matériaux lisibles/inscriptibles à base de carbone
US20110033638A1 (en) * 2009-08-10 2011-02-10 Applied Materials, Inc. Method and apparatus for deposition on large area substrates having reduced gas usage
CN102741982B (zh) * 2010-02-04 2015-07-15 富士电机株式会社 用于制造半导体器件的方法
US9085045B2 (en) * 2011-11-04 2015-07-21 Tokyo Electron Limited Method and system for controlling a spike anneal process
US9511560B2 (en) 2012-04-13 2016-12-06 Infineon Technologies Ag Processing a sacrificial material during manufacture of a microfabricated product
JP2014090045A (ja) * 2012-10-30 2014-05-15 Sanken Electric Co Ltd イオン導入層の活性化方法、および、半導体装置の製造方法

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Also Published As

Publication number Publication date
KR20060108631A (ko) 2006-10-18
EP1676300A1 (fr) 2006-07-05
US20070243721A1 (en) 2007-10-18
WO2005036627A1 (fr) 2005-04-21
EP1676300B1 (fr) 2014-10-01
JP2007507900A (ja) 2007-03-29

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