KR101234575B1 - Euv 콜렉터 파편 관리 - Google Patents

Euv 콜렉터 파편 관리 Download PDF

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Publication number
KR101234575B1
KR101234575B1 KR1020077009514A KR20077009514A KR101234575B1 KR 101234575 B1 KR101234575 B1 KR 101234575B1 KR 1020077009514 A KR1020077009514 A KR 1020077009514A KR 20077009514 A KR20077009514 A KR 20077009514A KR 101234575 B1 KR101234575 B1 KR 101234575B1
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South Korea
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delete delete
plasma
euv
etch
source material
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Expired - Fee Related
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Korean (ko)
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KR20070091603A (ko
Inventor
윌리엄 엔. 파틀로
이고르 브이. 포멘코프
알렉산더 아이. 에르쇼프
윌리엄 올드햄
오스카 햄버그
윌리엄 에프. 마르크스
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사이머 인코포레이티드
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Optical Elements Other Than Lenses (AREA)
KR1020077009514A 2004-11-01 2005-10-20 Euv 콜렉터 파편 관리 Expired - Fee Related KR101234575B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/979,945 2004-11-01
US10/979,945 US8075732B2 (en) 2004-11-01 2004-11-01 EUV collector debris management
PCT/US2005/037725 WO2006049886A2 (en) 2004-11-01 2005-10-20 Euv collector debris management

Publications (2)

Publication Number Publication Date
KR20070091603A KR20070091603A (ko) 2007-09-11
KR101234575B1 true KR101234575B1 (ko) 2013-02-19

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Family Applications (1)

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KR1020077009514A Expired - Fee Related KR101234575B1 (ko) 2004-11-01 2005-10-20 Euv 콜렉터 파편 관리

Country Status (5)

Country Link
US (1) US8075732B2 (enExample)
EP (1) EP1807866B1 (enExample)
JP (1) JP2008518480A (enExample)
KR (1) KR101234575B1 (enExample)
WO (1) WO2006049886A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102444183B1 (ko) 2022-02-07 2022-09-16 주식회사 경신이엔지 연속식 멸균 시스템

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7671349B2 (en) * 2003-04-08 2010-03-02 Cymer, Inc. Laser produced plasma EUV light source
US7109503B1 (en) 2005-02-25 2006-09-19 Cymer, Inc. Systems for protecting internal components of an EUV light source from plasma-generated debris
US7868304B2 (en) * 2005-02-07 2011-01-11 Asml Netherlands B.V. Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby
JP5033126B2 (ja) * 2005-06-21 2012-09-26 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 照射ユニット内の光学表面の洗浄化処理および後処理の方法
JP5124452B2 (ja) * 2005-06-21 2013-01-23 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 照射ユニット光学面の二段階クリーニング方法
US7772570B2 (en) * 2006-12-22 2010-08-10 Asml Netherlands B.V. Assembly for blocking a beam of radiation and method of blocking a beam of radiation
JP5098019B2 (ja) * 2007-04-27 2012-12-12 ギガフォトン株式会社 極端紫外光源装置
WO2008135948A1 (en) * 2007-05-03 2008-11-13 L'air Liquide-Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of cleaning stannane distribution system
JP4973425B2 (ja) * 2007-10-03 2012-07-11 ウシオ電機株式会社 極端紫外光光源装置における集光光学手段のクリーニング方法及び極端紫外光光源装置
JP5133740B2 (ja) * 2008-03-10 2013-01-30 ギガフォトン株式会社 極端紫外光源装置
JP5246916B2 (ja) 2008-04-16 2013-07-24 ギガフォトン株式会社 Euv光発生装置におけるイオン回収装置および方法
EP2297377B1 (en) * 2008-05-30 2017-12-27 Colorado State University Research Foundation Plasma-based chemical source device and method of use thereof
NL2003181A1 (nl) * 2008-07-14 2010-01-18 Asml Netherlands Bv A source module of an EUV lithographic apparatus, a lithographic apparatus, and a method for manufacturing a device.
EP2157481A3 (en) * 2008-08-14 2012-06-13 ASML Netherlands B.V. Radiation source, lithographic apparatus, and device manufacturing method
EP2161725B1 (en) * 2008-09-04 2015-07-08 ASML Netherlands B.V. Radiation source and related method
US20100192973A1 (en) * 2009-01-19 2010-08-05 Yoshifumi Ueno Extreme ultraviolet light source apparatus and cleaning method
JP5559562B2 (ja) 2009-02-12 2014-07-23 ギガフォトン株式会社 極端紫外光光源装置
JP2011023712A (ja) 2009-06-19 2011-02-03 Gigaphoton Inc 極端紫外光源装置
US20110318503A1 (en) * 2010-06-29 2011-12-29 Christian Adams Plasma enhanced materials deposition system
US8399868B2 (en) * 2011-02-15 2013-03-19 Sematech Inc. Tools, methods and devices for mitigating extreme ultraviolet optics contamination
US8633459B2 (en) * 2011-03-02 2014-01-21 Cymer, Llc Systems and methods for optics cleaning in an EUV light source
US9145332B2 (en) * 2012-08-16 2015-09-29 Infineon Technologies Ag Etching apparatus and method
US9117636B2 (en) 2013-02-11 2015-08-25 Colorado State University Research Foundation Plasma catalyst chemical reaction apparatus
US9269544B2 (en) 2013-02-11 2016-02-23 Colorado State University Research Foundation System and method for treatment of biofilms
US9532826B2 (en) 2013-03-06 2017-01-03 Covidien Lp System and method for sinus surgery
US9555145B2 (en) 2013-03-13 2017-01-31 Covidien Lp System and method for biofilm remediation
US9719932B1 (en) * 2013-11-04 2017-08-01 Kla-Tencor Corporation Confined illumination for small spot size metrology
US10237962B2 (en) 2014-02-26 2019-03-19 Covidien Lp Variable frequency excitation plasma device for thermal and non-thermal tissue effects
US9539622B2 (en) * 2014-03-18 2017-01-10 Asml Netherlands B.V. Apparatus for and method of active cleaning of EUV optic with RF plasma field
US9609731B2 (en) 2014-07-07 2017-03-28 Media Lario Srl Systems and methods for synchronous operation of debris-mitigation devices
US9541232B1 (en) * 2014-12-17 2017-01-10 The United States Of America As Represented By The Secretary Of The Navy Bi-pod cantilever mount for laser metrology apparatus and method
WO2017090126A1 (ja) 2015-11-25 2017-06-01 ギガフォトン株式会社 極端紫外光生成装置
US9888554B2 (en) 2016-01-21 2018-02-06 Asml Netherlands B.V. System, method and apparatus for target material debris cleaning of EUV vessel and EUV collector
US10524849B2 (en) 2016-08-02 2020-01-07 Covidien Lp System and method for catheter-based plasma coagulation
US11438999B2 (en) * 2019-11-15 2022-09-06 The Regents Of The University Of California Devices and methods for creating plasma channels for laser plasma acceleration
KR20220123007A (ko) * 2020-01-10 2022-09-05 유니버시티 오브 마이애미 추력 생성을 위한 이온 부스터
US11658006B2 (en) 2021-01-14 2023-05-23 Applied Materials, Inc. Plasma sources and plasma processing apparatus thereof
EP4330768A1 (en) * 2021-04-26 2024-03-06 ASML Netherlands B.V. A cleaning method and associated illumination source metrology apparatus
EP4170421A1 (en) * 2021-10-25 2023-04-26 ASML Netherlands B.V. A cleaning method and associated illumination source metrology apparatus
KR102864171B1 (ko) * 2023-06-16 2025-09-24 한국표준과학연구원 Euv 광원에 의한 광학부품 오염 방지 장치 및 그 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020168049A1 (en) * 2001-04-03 2002-11-14 Lambda Physik Ag Method and apparatus for generating high output power gas discharge based source of extreme ultraviolet radiation and/or soft x-rays
US20040007246A1 (en) * 2002-07-15 2004-01-15 Michael Chan In-situ cleaning of light source collector optics
US7026629B2 (en) * 2001-12-28 2006-04-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

Family Cites Families (87)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US716394A (en) * 1900-07-11 1902-12-23 William B H Dowse Fastener.
US2759106A (en) * 1951-05-25 1956-08-14 Wolter Hans Optical image-forming mirror system providing for grazing incidence of rays
US3279176A (en) * 1959-07-31 1966-10-18 North American Aviation Inc Ion rocket engine
US3150483A (en) * 1962-05-10 1964-09-29 Aerospace Corp Plasma generator and accelerator
US3232046A (en) * 1962-06-06 1966-02-01 Aerospace Corp Plasma generator and propulsion exhaust system
US3746870A (en) * 1970-12-21 1973-07-17 Gen Electric Coated light conduit
US3969628A (en) * 1974-04-04 1976-07-13 The United States Of America As Represented By The Secretary Of The Army Intense, energetic electron beam assisted X-ray generator
US4042848A (en) * 1974-05-17 1977-08-16 Ja Hyun Lee Hypocycloidal pinch device
US3946332A (en) * 1974-06-13 1976-03-23 Samis Michael A High power density continuous wave plasma glow jet laser system
US3961197A (en) * 1974-08-21 1976-06-01 The United States Of America As Represented By The United States Energy Research And Development Administration X-ray generator
US3960473A (en) * 1975-02-06 1976-06-01 The Glastic Corporation Die structure for forming a serrated rod
US4162160A (en) * 1977-08-25 1979-07-24 Fansteel Inc. Electrical contact material and method for making the same
US4143275A (en) * 1977-09-28 1979-03-06 Battelle Memorial Institute Applying radiation
US4203393A (en) * 1979-01-04 1980-05-20 Ford Motor Company Plasma jet ignition engine and method
JPS5756668A (en) * 1980-09-18 1982-04-05 Nissan Motor Co Ltd Plasma igniter
US4364342A (en) * 1980-10-01 1982-12-21 Ford Motor Company Ignition system employing plasma spray
USRE34806E (en) * 1980-11-25 1994-12-13 Celestech, Inc. Magnetoplasmadynamic processor, applications thereof and methods
US4538291A (en) * 1981-11-09 1985-08-27 Kabushiki Kaisha Suwa Seikosha X-ray source
US4618971A (en) * 1982-09-20 1986-10-21 Eaton Corporation X-ray lithography system
US4504964A (en) * 1982-09-20 1985-03-12 Eaton Corporation Laser beam plasma pinch X-ray system
US4633492A (en) * 1982-09-20 1986-12-30 Eaton Corporation Plasma pinch X-ray method
US4536884A (en) * 1982-09-20 1985-08-20 Eaton Corporation Plasma pinch X-ray apparatus
US4507588A (en) * 1983-02-28 1985-03-26 Board Of Trustees Operating Michigan State University Ion generating apparatus and method for the use thereof
DE3332711A1 (de) * 1983-09-10 1985-03-28 Fa. Carl Zeiss, 7920 Heidenheim Vorrichtung zur erzeugung einer plasmaquelle mit hoher strahlungsintensitaet im roentgenbereich
JPS60175351A (ja) * 1984-02-14 1985-09-09 Nippon Telegr & Teleph Corp <Ntt> X線発生装置およびx線露光法
US4561406A (en) * 1984-05-25 1985-12-31 Combustion Electromagnetics, Inc. Winged reentrant electromagnetic combustion chamber
US4837794A (en) * 1984-10-12 1989-06-06 Maxwell Laboratories Inc. Filter apparatus for use with an x-ray source
US4626193A (en) * 1985-08-02 1986-12-02 Itt Corporation Direct spark ignition system
US4774914A (en) * 1985-09-24 1988-10-04 Combustion Electromagnetics, Inc. Electromagnetic ignition--an ignition system producing a large size and intense capacitive and inductive spark with an intense electromagnetic field feeding the spark
CA1239486A (en) * 1985-10-03 1988-07-19 Rajendra P. Gupta Gas discharge derived annular plasma pinch x-ray source
CA1239487A (en) * 1985-10-03 1988-07-19 National Research Council Of Canada Multiple vacuum arc derived plasma pinch x-ray source
US4928020A (en) * 1988-04-05 1990-05-22 The United States Of America As Represented By The United States Department Of Energy Saturable inductor and transformer structures for magnetic pulse compression
DE3927089C1 (enExample) * 1989-08-17 1991-04-25 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De
US5102776A (en) * 1989-11-09 1992-04-07 Cornell Research Foundation, Inc. Method and apparatus for microlithography using x-pinch x-ray source
US5027076A (en) * 1990-01-29 1991-06-25 Ball Corporation Open cage density sensor
US5175755A (en) * 1990-10-31 1992-12-29 X-Ray Optical System, Inc. Use of a kumakhov lens for x-ray lithography
US5126638A (en) * 1991-05-13 1992-06-30 Maxwell Laboratories, Inc. Coaxial pseudospark discharge switch
US5142166A (en) * 1991-10-16 1992-08-25 Science Research Laboratory, Inc. High voltage pulsed power source
JPH0816720B2 (ja) * 1992-04-21 1996-02-21 日本航空電子工業株式会社 軟x線多層膜反射鏡
US5411224A (en) * 1993-04-08 1995-05-02 Dearman; Raymond M. Guard for jet engine
US5313481A (en) * 1993-09-29 1994-05-17 The United States Of America As Represented By The United States Department Of Energy Copper laser modulator driving assembly including a magnetic compression laser
US5448580A (en) * 1994-07-05 1995-09-05 The United States Of America As Represented By The United States Department Of Energy Air and water cooled modulator
US5577092A (en) * 1995-01-25 1996-11-19 Kublak; Glenn D. Cluster beam targets for laser plasma extreme ultraviolet and soft x-ray sources
US5504795A (en) * 1995-02-06 1996-04-02 Plex Corporation Plasma X-ray source
CA2186899C (en) * 1995-02-17 2010-04-20 Daniel L. Birx Pulse power generating circuit with energy recovery
US5830336A (en) * 1995-12-05 1998-11-03 Minnesota Mining And Manufacturing Company Sputtering of lithium
US6031241A (en) * 1997-03-11 2000-02-29 University Of Central Florida Capillary discharge extreme ultraviolet lamp source for EUV microlithography and other related applications
US5963616A (en) * 1997-03-11 1999-10-05 University Of Central Florida Configurations, materials and wavelengths for EUV lithium plasma discharge lamps
US5936988A (en) * 1997-12-15 1999-08-10 Cymer, Inc. High pulse rate pulse power system
US6172324B1 (en) * 1997-04-28 2001-01-09 Science Research Laboratory, Inc. Plasma focus radiation source
US5866871A (en) * 1997-04-28 1999-02-02 Birx; Daniel Plasma gun and methods for the use thereof
US6064072A (en) * 1997-05-12 2000-05-16 Cymer, Inc. Plasma focus high energy photon source
US5763930A (en) * 1997-05-12 1998-06-09 Cymer, Inc. Plasma focus high energy photon source
US6815700B2 (en) * 1997-05-12 2004-11-09 Cymer, Inc. Plasma focus light source with improved pulse power system
US6566668B2 (en) * 1997-05-12 2003-05-20 Cymer, Inc. Plasma focus light source with tandem ellipsoidal mirror units
US6744060B2 (en) * 1997-05-12 2004-06-01 Cymer, Inc. Pulse power system for extreme ultraviolet and x-ray sources
US6452199B1 (en) * 1997-05-12 2002-09-17 Cymer, Inc. Plasma focus high energy photon source with blast shield
US6566667B1 (en) * 1997-05-12 2003-05-20 Cymer, Inc. Plasma focus light source with improved pulse power system
US6586757B2 (en) * 1997-05-12 2003-07-01 Cymer, Inc. Plasma focus light source with active and buffer gas control
US6285743B1 (en) * 1998-09-14 2001-09-04 Nikon Corporation Method and apparatus for soft X-ray generation
JP2000091096A (ja) 1998-09-14 2000-03-31 Nikon Corp X線発生装置
AU1454100A (en) * 1998-10-27 2000-05-15 Jmar Research, Inc. Shaped source of soft x-ray, extreme ultraviolet and ultraviolet radiation
US6493323B1 (en) * 1999-05-14 2002-12-10 Lucent Technologies Inc. Asynchronous object oriented configuration control system for highly reliable distributed systems
US6831963B2 (en) * 2000-10-20 2004-12-14 University Of Central Florida EUV, XUV, and X-Ray wavelength sources created from laser plasma produced from liquid metal solutions
US6377651B1 (en) * 1999-10-11 2002-04-23 University Of Central Florida Laser plasma source for extreme ultraviolet lithography using a water droplet target
TWI246872B (en) * 1999-12-17 2006-01-01 Asml Netherlands Bv Radiation source for use in lithographic projection apparatus
US6538257B2 (en) * 1999-12-23 2003-03-25 Koninklijke Philips Electronics N.V. Method of generating extremely short-wave radiation, and extremely short-wave radiation source unit
TW502559B (en) 1999-12-24 2002-09-11 Koninkl Philips Electronics Nv Method of generating extremely short-wave radiation, method of manufacturing a device by means of said radiation, extremely short-wave radiation source unit and lithographic projection apparatus provided with such a radiation source unit
US6304630B1 (en) * 1999-12-24 2001-10-16 U.S. Philips Corporation Method of generating EUV radiation, method of manufacturing a device by means of said radiation, EUV radiation source unit, and lithographic projection apparatus provided with such a radiation source unit
US6195272B1 (en) * 2000-03-16 2001-02-27 Joseph E. Pascente Pulsed high voltage power supply radiography system having a one to one correspondence between low voltage input pulses and high voltage output pulses
US6647086B2 (en) * 2000-05-19 2003-11-11 Canon Kabushiki Kaisha X-ray exposure apparatus
US6904073B2 (en) * 2001-01-29 2005-06-07 Cymer, Inc. High power deep ultraviolet laser with long life optics
JP2002006096A (ja) * 2000-06-23 2002-01-09 Nikon Corp 電磁波発生装置、これを用いた半導体製造装置並びに半導体デバイスの製造方法
US6576912B2 (en) * 2001-01-03 2003-06-10 Hugo M. Visser Lithographic projection apparatus equipped with extreme ultraviolet window serving simultaneously as vacuum window
US6589709B1 (en) * 2001-03-28 2003-07-08 Advanced Micro Devices, Inc. Process for preventing deformation of patterned photoresist features
EP1374289B1 (en) * 2001-03-28 2008-12-03 Advanced Micro Devices, Inc. Method of forming enhanced transistor gate using e-beam radiation and integrated circuit including this transistor gate
US6396900B1 (en) * 2001-05-01 2002-05-28 The Regents Of The University Of California Multilayer films with sharp, stable interfaces for use in EUV and soft X-ray application
US6922019B2 (en) * 2001-05-17 2005-07-26 The Regents Of The University Of California Microwave ion source
DE10151080C1 (de) * 2001-10-10 2002-12-05 Xtreme Tech Gmbh Einrichtung und Verfahren zum Erzeugen von extrem ultravioletter (EUV-)Strahlung auf Basis einer Gasentladung
US6864965B2 (en) * 2002-03-12 2005-03-08 Bae Systems Information And Electronic Systems Integration Inc. Dual-mode focal plane array for missile seekers
SG121847A1 (en) 2002-12-20 2006-05-26 Asml Netherlands Bv Method for cleaning a surface of a component of a lithographic projection apparatus, lithographic projection apparatus, device manufacturing method and cleaning system
SG115621A1 (en) * 2003-02-24 2005-10-28 Asml Netherlands Bv Method and device for measuring contamination of a surface of a component of a lithographic apparatus
JP4065528B2 (ja) * 2003-03-10 2008-03-26 キヤノン株式会社 恒温真空容器及びそれを用いた露光装置
US8945310B2 (en) 2003-05-22 2015-02-03 Koninklijke Philips Electronics N.V. Method and device for cleaning at least one optical component
US7196342B2 (en) 2004-03-10 2007-03-27 Cymer, Inc. Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
US6893975B1 (en) * 2004-03-31 2005-05-17 Tokyo Electron Limited System and method for etching a mask
US7355672B2 (en) 2004-10-04 2008-04-08 Asml Netherlands B.V. Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020168049A1 (en) * 2001-04-03 2002-11-14 Lambda Physik Ag Method and apparatus for generating high output power gas discharge based source of extreme ultraviolet radiation and/or soft x-rays
US7026629B2 (en) * 2001-12-28 2006-04-11 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20040007246A1 (en) * 2002-07-15 2004-01-15 Michael Chan In-situ cleaning of light source collector optics

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102444183B1 (ko) 2022-02-07 2022-09-16 주식회사 경신이엔지 연속식 멸균 시스템

Also Published As

Publication number Publication date
WO2006049886A3 (en) 2009-03-05
WO2006049886A2 (en) 2006-05-11
EP1807866A2 (en) 2007-07-18
EP1807866A4 (en) 2011-08-24
KR20070091603A (ko) 2007-09-11
JP2008518480A (ja) 2008-05-29
EP1807866B1 (en) 2013-03-06
US20060091109A1 (en) 2006-05-04
US8075732B2 (en) 2011-12-13

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