KR101232209B1 - 패턴결함 검사방법, 패턴결함 검사용 테스트 패턴 기판 및패턴결함 검사장치 및 포토마스크의 제조 방법 및 표시디바이스용 기판의 제조 방법 - Google Patents

패턴결함 검사방법, 패턴결함 검사용 테스트 패턴 기판 및패턴결함 검사장치 및 포토마스크의 제조 방법 및 표시디바이스용 기판의 제조 방법 Download PDF

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KR101232209B1
KR101232209B1 KR1020070057140A KR20070057140A KR101232209B1 KR 101232209 B1 KR101232209 B1 KR 101232209B1 KR 1020070057140 A KR1020070057140 A KR 1020070057140A KR 20070057140 A KR20070057140 A KR 20070057140A KR 101232209 B1 KR101232209 B1 KR 101232209B1
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South Korea
Prior art keywords
pattern
test
polymerization
defect
repeating
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KR1020070057140A
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English (en)
Korean (ko)
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KR20070119512A (ko
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노보루 야마구치
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호야 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020070057140A 2006-06-15 2007-06-12 패턴결함 검사방법, 패턴결함 검사용 테스트 패턴 기판 및패턴결함 검사장치 및 포토마스크의 제조 방법 및 표시디바이스용 기판의 제조 방법 Expired - Fee Related KR101232209B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00166409 2006-06-15
JP2006166409A JP4771871B2 (ja) 2006-06-15 2006-06-15 パターン欠陥検査方法、パターン欠陥検査用テストパターン基板、及びパターン欠陥検査装置、並びにフォトマスクの製造方法、及び表示デバイス用基板の製造方法

Publications (2)

Publication Number Publication Date
KR20070119512A KR20070119512A (ko) 2007-12-20
KR101232209B1 true KR101232209B1 (ko) 2013-02-12

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KR1020070057140A Expired - Fee Related KR101232209B1 (ko) 2006-06-15 2007-06-12 패턴결함 검사방법, 패턴결함 검사용 테스트 패턴 기판 및패턴결함 검사장치 및 포토마스크의 제조 방법 및 표시디바이스용 기판의 제조 방법

Country Status (3)

Country Link
JP (1) JP4771871B2 (https=)
KR (1) KR101232209B1 (https=)
TW (1) TWI394945B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010019639A (ja) * 2008-07-09 2010-01-28 Lasertec Corp ムラ検出装置及びパターン検査装置
JP5601095B2 (ja) * 2010-08-30 2014-10-08 凸版印刷株式会社 検査条件の調整用パターン、およびそれを用いた検査条件の調整方法
KR102000081B1 (ko) * 2017-09-19 2019-07-17 세메스 주식회사 다이를 검사하기 위한 다이 스테이지 유닛 및 이를 구비하는 다이 본딩 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010085778A (ko) * 1999-08-10 2001-09-07 오노 시게오 포토 마스크, 그 포토 마스크의 제조 방법, 그 포토마스크를 이용하는 투영 노광 장치 및 투영 노광 방법
KR20050064458A (ko) * 2003-12-23 2005-06-29 주식회사 하이닉스반도체 패턴 검사 장치
KR20060048093A (ko) * 2004-05-28 2006-05-18 호야 가부시키가이샤 얼룩결함 검사방법 및 장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59112934U (ja) * 1983-12-29 1984-07-30 富士通株式会社 パタ−ン照合検査機
JPH07198618A (ja) * 1993-12-28 1995-08-01 Toshiba Corp パターン欠陥検査装置
US5585211A (en) * 1995-02-06 1996-12-17 Firstein; Leon A. Fabrication and use of sub-micron dimensional standard
JP2001305071A (ja) * 2000-04-21 2001-10-31 Nikon Corp 欠陥検査装置
JP4266082B2 (ja) * 2001-04-26 2009-05-20 株式会社東芝 露光用マスクパターンの検査方法
JP4005881B2 (ja) * 2002-08-30 2007-11-14 株式会社東芝 露光装置の検査方法
JP4529366B2 (ja) * 2003-03-26 2010-08-25 株式会社ニコン 欠陥検査装置、欠陥検査方法及びホールパターンの検査方法
JP4480001B2 (ja) * 2004-05-28 2010-06-16 Ｈｏｙａ株式会社 ムラ欠陥検査マスク、ムラ欠陥検査装置及び方法、並びにフォトマスクの製造方法
JP4480009B2 (ja) * 2004-12-06 2010-06-16 Ｈｏｙａ株式会社 欠陥検査装置及び方法、並びにフォトマスクの製造方法
JP4993934B2 (ja) * 2006-03-31 2012-08-08 Ｈｏｙａ株式会社 パターン欠陥検査方法、フォトマスクの製造方法、及び表示デバイス用基板の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010085778A (ko) * 1999-08-10 2001-09-07 오노 시게오 포토 마스크, 그 포토 마스크의 제조 방법, 그 포토마스크를 이용하는 투영 노광 장치 및 투영 노광 방법
KR20050064458A (ko) * 2003-12-23 2005-06-29 주식회사 하이닉스반도체 패턴 검사 장치
KR20060048093A (ko) * 2004-05-28 2006-05-18 호야 가부시키가이샤 얼룩결함 검사방법 및 장치

Also Published As

Publication number Publication date
JP2007333590A (ja) 2007-12-27
JP4771871B2 (ja) 2011-09-14
KR20070119512A (ko) 2007-12-20
TWI394945B (zh) 2013-05-01
TW200804796A (en) 2008-01-16

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