KR101204030B1 - Composition for ic tray and method for preparing an ic tray using the same - Google Patents

Abstract

The present invention, the total weight of the resin composition for semiconductor chip tray, 50% to 65% by weight of polyphenylene ether, 10% to 20% by weight of impact-resistant polystyrene, 1% to 3% by weight of carbon nanotubes, glass It provides a resin composition for a semiconductor chip tray, characterized in that it comprises 10 to 20% by weight of the bubble, 5 to 10% by weight of the inorganic filler and 0.5 to 1% by weight of the dispersant. The present invention also provides a semiconductor chip tray formed using the composition as a base material.
The resin composition for semiconductor chip trays of this invention is excellent in mechanical properties, such as heat resistance and numerical stability.

Description

Resin composition for semiconductor chip tray and semiconductor chip tray including same as a base material TECHNICAL FIELD

The present invention relates to a composition for a semiconductor chip tray comprising a polymer resin containing a carbon material and a glass material in a constant ratio, and a semiconductor chip tray manufactured using the composition as a base material. More specifically, the carbon material relates to a composition using carbon nanotubes, the glass material using glass bubbles, and a tray made from the base material. In addition, the present invention relates to a semiconductor chip tray formed by using the composition containing the component in a predetermined component ratio so as to have an acceptable value in the degree of shrinkage, tensile strength, injection pressure, thermal strain, conductivity, and the like, and a manufacturing method thereof. .

The semiconductor chip transport tray (hereinafter referred to as a semiconductor chip tray) has often used a resin to which conductivity and antistatic property have been imparted, and according to the temperature at which the semiconductor is baked, acryl butadiene styrene resin (baking temperature of about 60 ° C to about 70) ° C), polyphenylene oxide or polyphenylene ether resin (baking temperature about 120 ° C to about 150 ° C), polysulfone resin (baking temperature about 120 ° C to about 150 ° C), polyethersulfone resin (baking temperature About 180 ° C.) and the like.

The resins used in the trays for semiconductor chips are roughly determined according to the semiconductor baking temperature, and the trays for the semiconductor chips made of these resins at each temperature should ensure dimensional stability.

Recently, trays have been developed that can simultaneously carry and dry a semiconductor chip using a modified polyphenylene ether resin imparted with conductivity or antistatic properties. However, in order to dry a semiconductor chip, a high temperature of 150 ° C. or higher is required, but a tray containing polyphenylene ether has problems that are not satisfactory in terms of heat resistance, minimization of warping of molded articles, molding processability, and the like.

SUMMARY OF THE INVENTION An object of the present invention is to provide a resin composition for a semiconductor chip tray which is light in weight and excellent in mechanical properties such as heat resistance, numerical stability, anti-twisting and high tensile strength by adding glass bubbles together with carbon nanotubes, which are carbon materials. It is done. Moreover, an object of this invention is to provide the semiconductor chip tray manufactured using the said resin composition as a base material.

The present invention, 50% by weight to 65% by weight of polyphenylene ether with respect to the total weight of the resin composition for semiconductor chip trays; 10 to 20 weight percent of impact resistant polystyrene; 1% to 3% by weight of carbon nanotubes; 10% to 20% by weight of glass bubbles; 5% to 10% by weight of inorganic filler; And 0.5 wt% to 1 wt% of a dispersant; It provides a resin composition for a semiconductor chip tray comprising a.

Herein, the inorganic filler may be glass fiber, talc, mica, clay, calcium carbonate, barium sulfate, ceramic, or a mixture of two or more thereof.

The resin composition may further include an additive in the range of 5% by weight to 10% by weight based on the total weight of the composition.

The additive may be a lubricant, an antioxidant, a stabilizer or a mixture of two or more thereof.

Moreover, this invention is 50 weight%-65 weight% of polyphenylene ether with respect to the total weight of the resin composition for semiconductor chip trays; 10 to 20 weight percent of impact resistant polystyrene; 1% to 3% by weight of carbon nanotubes; 10% to 20% by weight of glass bubbles; 5% to 10% by weight of inorganic filler; And 0.5 wt% to 1 wt% of a dispersant; provides a tray for a semiconductor chip comprising a resin composition comprising a base material.

Herein, the inorganic filler may be glass fiber, talc, mica, clay, calcium carbonate, barium sulfate, ceramic, or a mixture of two or more thereof. With respect to the total weight of the resin composition, it may further comprise an additive in the range of 5% by weight to 10% by weight. The additive may be a lubricant, an antioxidant, a stabilizer or a mixture of two or more thereof.

Finally, the present invention comprises a) preparing a first mixture by mixing 50 wt% to 65 wt% of polyphenylene ether and 10 to 20 wt% of impact resistant polystyrene, based on the total weight of the resin composition for a semiconductor chip tray; b) adding 5 wt% to 10 wt% of inorganic filler to the first mixture and mixing to prepare a second mixture; c) adding 1% to 3% by weight of carbon nanotubes and 10% to 20% by weight of glass bubbles to the second mixture and mixing to prepare a third mixture; d) extruding the third mixture; e) cooling the extruded mixture; And f) drying the cooled mixture; provides a method for producing a resin for a semiconductor chip tray comprising a.

Here, the steps a), b) and c) may be performed simultaneously or sequentially. Mixing and extruding the components in steps a), b), c) and d) may use a metering extruder. In step d), the extrusion temperature may be made in the range of 200 ℃ to 350 ℃. In the step e), the cooling temperature may be made in the range of 50 ℃ to 70 ℃. The step e) may be performed by sequentially performing a water-cooling method for cooling the extrudate extruded in contact with water and an air-cooling method for cooling in air. Step f), the drying temperature may be made in the range of 100 ℃ to 130 ℃. Step f), the drying time may be made in the range of 2 to 5 hours. In step f), dehumidification may be simultaneously performed while drying is performed. The method may further include adding and mixing an additive before the step d). The additive may be a lubricant, an antioxidant, a stabilizer or a mixture of two or more thereof.

The resin composition for a semiconductor chip tray and the semiconductor chip tray using the same according to the present invention have no effect of shrinkage after manufacture, excellent tensile strength, excellent injection pressure, and improved conductivity. Moreover, the tray which used the resin composition which concerns on this invention as a base material is high in heat distortion temperature, and can be used even at high temperature 150 degreeC or more.

1 schematically shows an example of a raw material passage extruder used to prepare a resin composition according to the present invention.
2 is a flowchart of a method of manufacturing a resin composition according to an embodiment of the present invention.
Figure 3 shows a photograph of the extrusion of the resin composition according to an embodiment of the present invention and molding it into pellets.
4 is a photograph showing a semiconductor chip tray according to an embodiment of the present invention.

Hereinafter, the present invention will be described in detail with reference to the following examples and drawings.

The present invention provides a resin composition suitable for use as a tray for a semiconductor chip, a method for manufacturing the same, and a tray for a semiconductor chip manufactured using the same.

The resin composition of the present invention is 50% to 65% by weight of polyphenylene ether relative to the total weight of the resin composition, 10% to 20% by weight of impact-resistant polystyrene, 1% to 3% by weight of carbon nanotubes, 10% by weight of glass bubbles To 20 wt%, inorganic filler 5 wt% to 10 wt%, and dispersant 0.5 wt% to 1 wt%.

The polyphenylene ether (polyphenyleneether, 2,6-dimethylphenylene ether, PPE) may be represented by the following formula (1).

[Formula 1]

N is an integer of 1 or more.

The polyphenylene ether is preferably used in a modified form in which the polystyrene is mixed and modified. The modified polyphenylene ether modified by mixing the polyphenylene ether and the polystyrene may be represented by the following Chemical Formula 2, and is understood as an amorphous thermoplastic resin.

The modified polyphenylene ether has a lower heat resistance than general polyphenylene ether, but the moldability is improved, so that the mechanical properties are stable over a wide temperature range, and the dimensional stability and heat resistance are excellent. Suitable for use in the field of equipment.

The polyphenylene ether which can be used for the preparation of the modified polyphenylene ether according to the present invention may be any commercial type of the polyphenylene ether represented by Formula 1 above, and may be used in a non-commercial form.

Although the specification only refers to the use of polyphenylene ether to produce modified polyphenylene ether, the modified poly is formed by mixing and reacting polyphenylene oxide with polystyrene by modifying the contents disclosed herein. Phenylene oxide can be used.

The polystyrene that can be used to modify the polyphenylene ether is a polystyrene modified to have impact resistance and is preferably HIPS (High Impact Polystyrene). The impact resistant polystyrene may be prepared through free radical polymerization by placing a mixture of a styrene monomer and an elastomer in a reactor. The impact-resistant polystyrene that can be used in the present invention may be any commercially available impact-resistant polystyrene, and may be prepared by reacting a mixture of a styrene monomer and an elastomer. Since polystyrene has excellent injection fluidity, it is possible to improve injection mass productivity in modified polyphenylene ether.

The resin composition according to the present invention preferably contains 50% by weight to 65% by weight of polyphenylene ether and 10% by weight to 20% by weight of impact-resistant polystyrene, based on the total weight of the resin composition. That is, it is preferable that the content ratio of polyphenylene ether and impact-resistant polystyrene is within the range of 2.5 to 6.5 with respect to the content 1 of polystyrene of impact-resistant polystyrene. As can be seen through the physical properties of the examples and comparative examples and modified polyphenylene ethers produced by the following, the content ratio of polyphenylene ether and impact-resistant polystyrene to the semiconductor chip tray It is not preferable because it will show an unsuitable physical property for use.

The carbon nanotubes are used to impart conductivity in manufacturing a tray for a semiconductor chip, and preferably at least 1% by weight based on the total weight of the resin composition. When added at less than 1 weight%, the surface resistance value which shows electroconductivity becomes so large that it is unpreferable. Preferably it is in the range of 1 to 3 weight%. If the content exceeds 3% by weight, the impact strength or the flexural modulus is lowered, so that there is a disadvantage in that the formability of the final product is not good. Although carbon nanotubes have a relatively small amount as described above, they exhibit a desired level of conductivity and have a high tensile strength and a low specific gravity, which does not deteriorate the appearance or mechanical properties of the final molded product.

The glass bubble is used to realize the weight reduction of the final product. Since the glass bubble has a spherical shape, the filling rate may be improved even with a low surface area. That is, since a small amount may be used in comparison with other fillers, it is possible to reduce the weight of the product, and to reduce the shrinkage rate and to prevent torsion. In addition, the resin with glass bubbles increases the heat resistance due to the low heat transfer properties and the excellent heat shielding performance of the glass. In addition, it is possible to obtain the effect of lowering the viscosity of the resin and improving the moldability to smooth the flow during molding. The glass bubble uses 10% by weight to 20% by weight based on the total weight of the resin composition. When the glass bubble is used in less than 10% by weight, the effect of improving the heat resistance of the resin, reducing the shrinkage ratio or reducing the specific gravity is not great. On the other hand, when the amount exceeds 20% by weight, the viscosity of the resin is drastically lowered, which causes inconvenience in molding.

The dispersant prevents solid particles such as the carbon nanotubes, the carbon fibers, and the glass fibers from being dispersed in the polymer to prevent sedimentation or aggregation and to form a uniform and stable suspension. Examples of the dispersant include anionic surfactants such as monoalkyl sulfate, alkylpolyoxyethylene sulfate, alkyl benzene sulfonate or monoalkyl phosphate; Amphoteric ionic surfactants such as cationic surfactants such as monoalkyltrimethylammonium salts, dialkyldimethylammonium salts or alkylbenzylmethylammonium salts, alkylsulfobetaines or alkylcarboxybetaines; Or nonionic surfactants such as polyoxyethylene alkyl ethers, fatty acid sorbitan esters, fatty acid diethanolamines, or alkyl monoglyceryl ethers. It is preferable to add 0.5% by weight or more based on the total weight of the resin composition. If the content of the dispersant is less than 0.5% by weight, the dispersion of the particle components in the resin is not uniform. Preferably, the dispersant is added in an appropriate amount in the range of 0.5% by weight to 1% by weight in consideration of the content of the particulate matter mixed in the resin.

The inorganic filler may be selected from glass fiber, talc, mica, clay, barium sulfate, ceramic, calcium carbonate or minerals, or a mixture of two or more of the above components. Inorganic fillers have the effect of reducing the amount of resin used while supplementing the mechanical properties of the resin. The inorganic filler is contained in the range of 5% by weight to 10% by weight relative to the total weight of the resin composition. If the content of the inorganic filler is less than 5% by weight does not exhibit the desired mechanical properties complementary effect. If it exceeds 10% by weight, the glass bubble described above is also a kind of inorganic filler, and considering the content of the glass bubble, it is preferable not to exceed 10% by weight because an excess of filler may be included compared to the resin.

Suitable inorganic fillers can be selected and used depending on the intended use and application of the final product. Preferably the inorganic filler is glass fiber or talc. More preferably, glass fibers and talc may be mixed and used in a weight ratio of 1: 1. Glass fiber has excellent tensile strength, heat resistance, and dimensional stability, so that the shrinkage after molding is low and the semiconductor chip tray, which is the final product, can be protected from stress against external environmental changes. However, when the glass fiber is added in an excessive amount, it is preferable not to exceed 10% by weight relative to the total weight of the resin composition because the fiber may be expressed in the appearance of the final product. In addition, talc has the effect of improving mechanical properties such as hardness, tensile strength or wear resistance of the resin. The content of the inorganic filler is determined after determining the content of the polyphenylene ether, impact-resistant polystyrene and carbon fiber described above.

The resin composition according to the present invention may further include an additive in the range of 5 to 10% by weight based on the total weight of the resin composition. Examples of the additive include a lubricant, an antioxidant, or a stabilizer, and the additive may be used by mixing two or more thereof. However, the present invention is not limited thereto, and any one may be added as long as it can exhibit desirable physical properties within the desired range of the resin composition according to the present invention.

The lubricant is an additive that can be used to improve the processability of the resin composition to improve the fluidity of the resin during the manufacture of the resin composition or upon injection of the semiconductor chip tray to minimize residual stress in the resin. As long as it is commonly used as a lubricant in the art to which the present invention belongs, any one can be used, for example, calcium-stearate, zinc-stearate, zinc-oxide, and the like.

The antioxidant is an additive that can be used in the preparation of the resin composition in order to prevent oxidation of the resin composition, as long as it is commonly used as an antioxidant in the technical field to which the present invention belongs can be used, for example, phenyl-based Such as compounds or amine compounds.

The stabilizer may be a heat stabilizer, an ultraviolet stabilizer, and the like. As the heat stabilizer, a phenol compound, an amine compound, or the like may be used. The ultraviolet stabilizer may be a benzophenol compound, a benzotriazole compound, or the like. Stabilizers that can be used are not limited thereto.

1 schematically shows a raw material barrel and an extruder used for producing a resin composition according to the present invention.

Raw materials corresponding to the raw material containers 111, 112, and 113 are added, and the metering unit 140 is set so that each material is introduced into the extruder 120 at a constant feed rate and dose. The inside of the extruder 120 is composed of two screws 130, the wing of the screw is preferably designed in consideration of the speed and the speed at which each raw material is mixed and extruded. Each raw material container is a raw material container 111 into which polyphenylene ether and impact-resistant polystyrene are injected, a raw material container 112 into which an inorganic filler is added, and a raw material container 113 into which carbon nanotubes and glass bubbles are injected. However, in addition to this, it is possible to add the additives by designing and placing the raw material container into which each additive is added at an appropriate position.

The injected raw materials are mixed and extruded in the direction of the arrow, and are primarily mixed with polyphenylene ether and impact-resistant polystyrene and reacted, and then mixed again with the inorganic filler introduced through the other raw material container 112. Then, after mixing with the carbon nanotubes and glass bubbles introduced through another raw material container 113, the extruded mixture through the outlet 150 flows out.

2, a flowchart of a method of manufacturing a resin composition according to an embodiment of the present invention is disclosed.

First, each raw material is supplied to each raw material container connected to the extruder, respectively (S100). The extruder is a fixed quantity extruder, and the amount and rate of feed of each raw material into the extruder can be determined and set.

The input raw materials flow while being mixed in the extruder. First, polyphenylene ether and impact-resistant polystyrene are first mixed and reacted to form a first mixture (S200), and then the first mixture and the inorganic filler are mixed. Form a second mixture (S300). Next, the third mixture is mixed with the carbon nanotubes and the glass bubbles to form a third mixture (S400). Alternatively, the forming of the first mixture (S200), the forming of the second mixture (S300) and the forming of the third mixture (S400) may be performed simultaneously (not shown).

Then, although not shown in the figure, it may be further added to form a third mixture and then optionally adding and mixing additives.

Extrusion temperature of the extruder is preferably within the range of 200 ℃ to 350 ℃, when the extrusion temperature is lower than 200 ℃ problems in extrusion because the mixture inside the extruder hardens. When the extrusion temperature is greater than 350 ° C, the extrusion temperature is preferably in the range of 200 ° C to 350 ° C because problems may occur as the cooling time becomes longer in the cooling process after extrusion.

The formed third mixture is extruded through the outlet of the extruder (S500), and is extruded and then cooled (S600).

It is preferable that the cooling temperature at the time of cooling is in the range of 50 degreeC-70 degreeC, and cooling is made to cool by first cooling the extruded mixture by contacting with water and then air cooling in air. Although not shown in the drawing, in the post-extruder process of FIG. 1, by placing a bath containing water so as to be connected to the outlet of the extruder, the extruded mixture is immediately contacted with water in the bath and then cooled immediately after being extruded. It is preferable to allow the cooling in the middle. It is good to have a short water cooling time, because the longer the water cooling absorbs a large amount of the extrudate and may cause a lot of bubbles during the final molding process. If only cooling in air without water cooling, the cooling time is too long, which is undesirable for the process. Therefore, it is desirable to harmonize appropriate water cooling and air cooling.

Extruded after the cooling process is dried to evaporate the water contained in the extrudate (S700). In the drying process, the drying temperature is in the range of 100 ° C to 130 ° C, and the drying time is preferably in the range of 2 hours to 5 hours, and in particular, although not shown in the drawing, simultaneously with dehumidification using a dehumidifier in a drying step. It is preferable to dry. If the dehumidification is not performed, it is preferable to dehumidify in the drying process because moisture may be contained in the final molded product, gas may be deformed, the molded product may be deformed or warped, or problems may occur.

Referring to Figure 3, after extruding the resin composition prepared according to an embodiment of the present invention is shown in the form of a pellet in a photograph.

Referring to Figure 4, after extruding the resin composition prepared in accordance with an embodiment of the present invention is shown in the photo produced by a tray for a semiconductor chip.

Hereinafter, examples and comparative examples thereof according to the present invention will be described in detail, and properties thereof are tested to show the effect of the resin composition according to the present invention.

{ Example }

Example  One

Polyphenylene ether (Asahi, S202A), impact resistant polystyrene (BASF, 576H), carbon nanotubes (NANOCYL, NC7000), glass bubble (3M, S60HS), talctalc (Lexem, NA1000), glass fiber (NEG, T289), a dispersant (BYK-P 4102) was prepared, and a lubricant was prepared as an additive. The prepared components were put into a hopper which is a raw material container. The raw materials put into the hopper were subjected to a metering device set to be metered, with respect to the total weight of the final extruded composition, 58% by weight of polyphenylene ether, 13% by weight of impact-resistant polystyrene, 3% by weight of carbon nanotubes, glass bubble 15 It was set at a weight percent, 5 weight percent talc, 5 weight percent glass fiber, and 1 weight percent dispersant and fed to the extruder. The extruder is a double screw type extruder, and each raw material is introduced into different places through an extruder device as shown in FIG. 1, and the two screws inside the extruder are interlocked with each other to mix each raw material. The extrusion conditions of the extruder were the temperature of the head portion 210 ℃, the temperature at the time of the final extrusion was 290 ℃, the extrusion speed of the extruder was set to extrude 300kg per hour. The final mixture extruded through the extruder was cooled with water to contact the water inside the tank about 20cm in a water bath having a water temperature of 60 ℃ and then cooled by air-cooled in air. Then, using a dehumidifier was dried for 4 hours while maintaining the temperature of 120 ℃ to prepare a final resin composition in the form of pellets.

Example  2

The content of the raw materials to be quantitatively fed into the extruder was 58 wt% polyphenylene ether, 14 wt% impact polystyrene, 2 wt% carbon nanotube, 18 wt% glass bubble, 7 wt% glass fiber, 1 wt% dispersant, talc A final resin composition was prepared in the form of pellets in the same manner as in Example 1 except that the weight was 0% by weight.

Example  3

The content of the raw materials quantitatively fed to the extruder was 58 wt% polyphenylene ether, 14 wt% impact resistant polystyrene, 2 wt% carbon nanotube, 18 wt% glass bubble, 0 wt% glass fiber, 1 wt% dispersant, talc A final resin composition was prepared in the form of pellets in the same manner as in Example 1, except that 7 wt% was used.

Comparative example  One

The content of the raw materials quantitatively fed to the extruder was 58 wt% of polyphenylene ether, 14 wt% of impact resistant polystyrene, 2 wt% of carbon nanotube, 0 wt% of glass bubble, 15 wt% of glass fiber, 1 wt% of dispersant, A final resin composition was prepared in the form of pellets in the same manner as in Example 1, except that 10 wt% of talc was used.

Comparative example  2

The content of the raw materials quantitatively fed to the extruder was 65 wt% of polyphenylene ether, 20 wt% of impact resistant polystyrene, 2 wt% of carbon nanotube, 2 wt% of glass bubble, 5 wt% of glass fiber, 1 wt% of dispersant, and A final modified resin composition was prepared in the form of pellets in the same manner as in Example 1, except that 5 wt% of talc was used.

Comparative example  3

70 wt% of polyphenylene ether, 20 wt% of impact resistant polystyrene, 2 wt% of carbon nanotube, 0 wt% of glass bubble, 5 wt% of glass fiber, 1 wt% of dispersant, A final resin composition was prepared in the form of pellets in the same manner as in Example 1, except that 5 wt% of talc was used.

Table 1 summarizes the compositions of Examples 1 to 3 and Comparative Examples 1 to 3.

Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 Comparative Example 3 Polyphenylene ether
(weight%) 58 58 58 58 65 70 Impact resistant polystyrene
(weight%) 13 14 14 14 20 20 Carbon nanotubes
(weight%) 3 2 2 2 2 2 Glass bubble
(weight%) 15 18 18 0 2 0 glass fiber
(weight%) 5 7 0 15 5 5 Dispersant
(weight%) One One One One One One Talc
(weight%) 5 0 7 10 5 2

{Test}

In order to test the physical properties of the resin composition for a semiconductor chip tray manufactured by Examples 1 to 3 and Comparative Examples 1 to 3, the following test was carried out.

1. Post-shrink test

The measurement was performed using a vernier caliper and measured to two decimal places.

The post-shrinkage test is a test procedure for estimating the degree of deformation when the product is manufactured into a product by measuring the degree of shrinkage after the final drying in the manufacturing process of the prepared resin composition. In the post-shrink test, the larger the shrinkage, the greater the degree of deformation after injection into the molded product, the limit range is 0.10mm.

Referring to Table 2, as a result of the post-shrink test, in Examples 1 and 3 produced by the manufacturing method according to the invention, the degree of shrinkage after drying the final resin composition is 0.07mm, 0.08mm, 0.08mm respectively It can be seen that it is good. On the other hand, in Comparative Examples 2 and 3, the degree of post-shrinkage is more than 0.01 it can be seen that it is not a preferred composition.

2. Tensile Strength Test

Specimens in accordance with ASTM standards were fabricated and measured with a measuring instrument called UTM. The tensile strength of the specimen was measured by gradually applying a tensile load to a tensile specimen conforming to the ASTM standard using a universal testing machine (UTM). The results are shown in Table 2 using units of N / mm ² . The allowable range of tensile strength is 130 N / mm ² . Referring to Table 2, the tensile strengths of the resin compositions of Examples 1 to 3 prepared according to the present invention were 145 N / mm ² , respectively. It can be seen that it is in a good range as 138 N / mm ² and 138 N / mm ² . On the other hand, in the case of Comparative Example 1 it can be seen that the tensile strength is 123N / mm ² is not an acceptable range.

3. Injection pressure test

It is related to the flow of the product, which determines the injection feeding pressure, and the higher the injection pressure, the lower the flowability. The injection feeding pressure uses the unit in kg, and the weight in the 100kg is a reference, if it is below this reference value, molding after injection is possible, but if it exceeds this standard, it is difficult to manufacture into a product because molding is impossible after injection. In the case of injection pressure, all the compositions of Examples 1-3 met the tolerance.

4. Heat Distortion Temperature (HDT) Test

The heat deflection temperature represents the maximum temperature at which a compound can withstand a given load for a given time, which determines the post-shrinkage and W / P of the product and characterizes the bake. In order to meet the characteristics required by the applicant, it is in the form of a pellet for drying at 150 ° C., therefore, the heat deformation temperature is required to be 20 ° C. to 25 ° C. higher than 150 ° C., and stably 175 as the temperature higher than 25 ° C. It is required that the temperature be higher than or equal to ℃. Referring to Table 2, in the case of the resin compositions of Examples 1 to 3 according to the present invention, it can be seen that the heat deformation temperatures are within an acceptable range as 178 ° C, 178 ° C and 177 ° C, respectively. On the other hand, it can be seen that the Comparative Examples 2 and 3 are outside the acceptable range.

5. Conductivity test

The conductivity of each of the specimens according to Examples 1 to 3 and Comparative Examples 1 to 3 was measured using KEITHLEY 6512A manufactured by Keithley as the conductivity measuring device. The resistance measuring instrument has a range of E4 to E10, and is a measure of the surface resistance of both ends of each specimen of the product injection tray, and measures the resistance value of O per unit area. Since the resin composition according to the present invention is intended to be used as a semiconductor chip tray, it needs to be within the resistance value range of E4 to E10 exhibiting semiconductivity, and among these values, the smaller the surface resistance value is preferred, the present applicant This directed value is a specimen with a resistance of E4. Referring to Table 2, it can be seen that the resin compositions of Examples 1, 2 and 3 according to the present invention all correspond to values required by the applicant as E4.

6. Specific gravity measurement

Specific gravity was measured using DME-220E manufactured by SHINKO. The lower the specific gravity, there is an advantage that can be molded into a lightweight product. In Examples 1 to 3, the specific gravity is 1.05, 1.05, and 1.05, respectively, which is smaller than 1.25 of Comparative Example 1, 1.15 of Comparative Example 2, and 1.10 of Comparative Example 3. Therefore, it can be seen that the product can be molded in a light weight compared to the compositions according to Comparative Examples 1 to 3.

The results of the test are shown in Table 2 below.

Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 Comparative Example 3 Post-shrinkage (mm) 0.07 0.08 0.08 0.09 0.17 0.18 The tensile strength
(N / mm ² ) 145 138 138 123 132 132 Injection pressure
(in kg) 90 90 90 100 90 80 HDT (° C) 178 178 177 178 172 166 Conductivity
(Ω / square) E4 E4 E4 E4 E4 E4 importance 1.05 1.05 1.05 1.25 1.15 1.10

Referring to the results shown in Table 2, the measured values in all six tests of the shrinkage value, tensile strength, injection pressure, heat deformation temperature, conductivity and specific gravity after drying is within the allowable range, Example 1 according to the present invention. It can be seen that only the resin composition of the 3 to. Therefore, according to the present invention, the resin composition in which each component is contained in a certain component ratio content is suitable for use for a semiconductor chip tray, ie, dimensional stability, mold shrinkage, impact strength, tensile strength, flexural strength, flexural modulus, and the like. It can be seen that the material having an appropriate value in physical properties such as specific gravity, elongation, elongation at break, temperature, and conductivity.

Although the above has been illustrated and described with respect to the preferred embodiment of the present invention, the present invention is not limited to the specific preferred embodiment described above, in the technical field to which the invention belongs without departing from the spirit of the invention claimed in the claims. Various modifications can be made by those skilled in the art, and such changes are within the scope of the claims.

111, 112, 113 ... Raw material 120 ... Extruder
130 ... screw 140 ... weighing meter
150.Outlet

Claims (19)

About the total weight of the resin composition for semiconductor chip trays,
50 wt% to 65 wt% polyphenylene ether;
10 to 20 weight percent of impact resistant polystyrene;
1% to 3% by weight of carbon nanotubes;
10% to 20% by weight of glass bubbles;
5% to 10% by weight of inorganic filler; And
0.5 wt% to 1 wt% dispersant;
Resin composition for a semiconductor chip tray, characterized by including the.
The method of claim 1,
The inorganic filler is a glass fiber, talc, mica, clay, calcium carbonate, barium sulfate, ceramic or a mixture of two or more thereof, the resin composition for a semiconductor chip tray.
The method of claim 1,
The resin composition further comprises an additive in the range of 5% by weight to 10% by weight based on the total weight of the composition,
The additive is a lubricant, an antioxidant, a stabilizer or a mixture of two or more thereof, the resin composition for a semiconductor chip tray.
delete About the total weight of the resin composition for semiconductor chip trays,
50 wt% to 65 wt% polyphenylene ether;
10 to 20 weight percent of impact resistant polystyrene;
1% to 3% by weight of carbon nanotubes;
10% to 20% by weight of glass bubbles;
5% to 10% by weight of inorganic filler; And
0.5 wt% to 1 wt% dispersant;
A tray for a semiconductor chip, comprising a resin composition comprising a base material.
The method of claim 5,
The inorganic filler is a glass fiber, talc, mica, clay, calcium carbonate, barium sulfate, ceramic or a mixture of two or more thereof, tray for a semiconductor chip.
The method of claim 5,
With respect to the total weight of the resin composition, further comprises an additive in the range of 5% by weight to 10% by weight,
Wherein said additive is a lubricant, an antioxidant, a stabilizer or a mixture of two or more thereof.
delete a) A first mixture is prepared by mixing 50% by weight to 65% by weight of polyphenylene ether, 10 to 20% by weight of impact resistant polystyrene and 0.5% to 1% by weight of a dispersant based on the total weight of the resin composition for a semiconductor chip tray. Doing;
b) adding 5 wt% to 10 wt% of inorganic filler to the first mixture and mixing to prepare a second mixture;
c) adding 1% to 3% by weight of carbon nanotubes and 10% to 20% by weight of glass bubbles to the second mixture and mixing to prepare a third mixture;
d) extruding the third mixture;
e) cooling the extruded mixture; And
f) drying the cooled mixture;
Method for producing a resin for a semiconductor chip tray, comprising a.
10. The method of claim 9,
The steps a), b) and c) are performed simultaneously or sequentially, the method of manufacturing a resin for a semiconductor chip tray.
The method of claim 9 or 10,
Method for producing a resin for a semiconductor chip tray, characterized in that the mixing and extrusion of the components in the steps a), b), c) and d) using a quantitative extruder.
The method of claim 9 or 10,
In the step d), the extrusion temperature is characterized in that made in the range of 200 ℃ to 350 ℃, a method for producing a resin for a semiconductor chip tray.
The method of claim 9 or 10,
In the step e), the cooling temperature is 50 ℃ to 70 ℃ characterized in that the method for producing a resin for a semiconductor chip tray.
The method of claim 9 or 10,
The step e) is a method of manufacturing a resin for a semiconductor chip tray, characterized in that the step of sequentially performing a water-cooling method for cooling by contacting the extrudate extruded in the step and the air cooled in the air.
The method of claim 9 or 10,
The step f), the drying temperature is a method for producing a resin for a semiconductor chip tray, characterized in that made in the range of 100 ℃ to 130 ℃.
The method of claim 9 or 10,
The step f), the drying time is a method for producing a resin for a semiconductor chip tray, characterized in that made in the range of 2 to 5 hours.
The method of claim 9 or 10,
In the step f), dehumidification is performed simultaneously while drying is performed.
The method of claim 9 or 10,
Adding and mixing the additives before the step d);
Wherein said additive is a lubricant, an antioxidant, a stabilizer or a mixture of two or more thereof.
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