KR101199031B1 - 셀레늄／１ｂ 족 잉크, 및 그의 제조방법 및 용도 - Google Patents

셀레늄／１ｂ 족 잉크, 및 그의 제조방법 및 용도 Download PDF

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Publication number
KR101199031B1
KR101199031B1 KR1020100068563A KR20100068563A KR101199031B1 KR 101199031 B1 KR101199031 B1 KR 101199031B1 KR 1020100068563 A KR1020100068563 A KR 1020100068563A KR 20100068563 A KR20100068563 A KR 20100068563A KR 101199031 B1 KR101199031 B1 KR 101199031B1
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South Korea
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group
selenium
substrate
providing
component
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English (en)
Korean (ko)
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KR20110034535A (ko
Inventor
데이비드 모슬리
케빈 칼지아
찰스 스즈만다
데이비드 엘. 토센
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롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨.
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/30—Inkjet printing inks
    • C09D11/32—Inkjet printing inks characterised by colouring agents
    • C09D11/322—Pigment inks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
    • C09D11/037—Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/52—Electrically conductive inks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Photovoltaic Devices (AREA)
KR1020100068563A 2009-09-28 2010-07-15 셀레늄／１ｂ 족 잉크, 및 그의 제조방법 및 용도 Active KR101199031B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/568,206 2009-09-28
US12/568,206 US8309179B2 (en) 2009-09-28 2009-09-28 Selenium/group 1b ink and methods of making and using same

Publications (2)

Publication Number Publication Date
KR20110034535A KR20110034535A (ko) 2011-04-05
KR101199031B1 true KR101199031B1 (ko) 2012-11-08

Family

ID=43569539

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100068563A Active KR101199031B1 (ko) 2009-09-28 2010-07-15 셀레늄／１ｂ 족 잉크, 및 그의 제조방법 및 용도

Country Status (6)

Country Link
US (2) US8309179B2 (https=)
EP (1) EP2305600B1 (https=)
JP (1) JP5523219B2 (https=)
KR (1) KR101199031B1 (https=)
CN (1) CN102031520B (https=)
TW (1) TWI431073B (https=)

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KR20120043051A (ko) * 2009-08-04 2012-05-03 프리커서 에너제틱스, 인코퍼레이티드. Ｃｉｓ 및 ｃｉｇｓ 광기전체를 위한 중합체성 전구체
US8709917B2 (en) * 2010-05-18 2014-04-29 Rohm And Haas Electronic Materials Llc Selenium/group 3A ink and methods of making and using same
US8119506B2 (en) * 2010-05-18 2012-02-21 Rohm And Haas Electronic Materials Llc Group 6a/group 3a ink and methods of making and using same
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
WO2012023973A2 (en) 2010-08-16 2012-02-23 Heliovolt Corporation Liquid precursor for deposition of indium selenide and method of preparing the same
US8282995B2 (en) * 2010-09-30 2012-10-09 Rohm And Haas Electronic Materials Llc Selenium/group 1b/group 3a ink and methods of making and using same
US20130264526A1 (en) * 2010-12-03 2013-10-10 E I Du Pont De Nemours And Company Molecular precursors and processes for preparing copper indium gallium sulfide/selenide coatings and films
US8771555B2 (en) * 2011-05-06 2014-07-08 Neo Solar Power Corp. Ink composition
US20120282721A1 (en) * 2011-05-06 2012-11-08 Yueh-Chun Liao Method for forming Chalcogenide Semiconductor Film and Photovoltaic Device
WO2012173676A1 (en) * 2011-06-17 2012-12-20 Precursor Energetics, Inc. Solution-based processes for solar cells
JP2013064108A (ja) * 2011-09-16 2013-04-11 Delsolar Co Ltd インク組成物及びその形成方法
JP5536153B2 (ja) * 2011-09-16 2014-07-02 新日光能源科技股▲ふん▼有限公司 カルコゲナイド半導体膜の形成方法及び光起電力装置
EP2647675A2 (en) * 2012-04-02 2013-10-09 Neo Solar Power Corp. Method for forming an ink
EP2647595A2 (en) * 2012-04-03 2013-10-09 Neo Solar Power Corp. Ink composition, chalcogenide semiconductor film, photovoltaic device and methods for forming the same
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
JP6012866B2 (ja) * 2013-06-03 2016-10-25 東京応化工業株式会社 錯体およびその溶液の製造方法、太陽電池用光吸収層の製造方法および太陽電池の製造方法
US9842733B2 (en) 2013-06-11 2017-12-12 Imec Vzw Method for dissolving chalcogen elements and metal chalcogenides in non-hazardous solvents
US8999746B2 (en) * 2013-08-08 2015-04-07 Tokyo Ohka Kogyo Co., Ltd. Method of forming metal chalcogenide dispersion, metal chalcogenide dispersion, method of producing light absorbing layer of solar cell, method of producing solar cell
TWI527821B (zh) * 2013-10-16 2016-04-01 國立中山大學 銀化合物、銀墨水及可撓式基板之噴印方法

Citations (1)

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US20050009225A1 (en) 2003-07-10 2005-01-13 International Business Machines Corporation Hydrazine-free solution deposition of chalcogenide films

Family Cites Families (13)

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US5176744A (en) 1991-08-09 1993-01-05 Microelectronics Computer & Technology Corp. Solution for direct copper writing
US6126740A (en) 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
US6770122B2 (en) 2001-12-12 2004-08-03 E. I. Du Pont De Nemours And Company Copper deposition using copper formate complexes
DE10360046A1 (de) 2003-12-18 2005-07-21 Basf Ag Kupfer(l)formiatkomplexe
US7663057B2 (en) 2004-02-19 2010-02-16 Nanosolar, Inc. Solution-based fabrication of photovoltaic cell
US7306823B2 (en) 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
ES2449066T3 (es) * 2004-07-19 2014-03-18 Philera New Zealand Limited Síntesis de trietilentetraminas
EP2944383A3 (en) 2006-11-09 2016-02-10 Alliance for Sustainable Energy, LLC Precursors for formation of copper selenide, indium selenide, copper indium diselenide, and/or copper indium gallium diselenide films
WO2008057119A1 (en) 2006-11-09 2008-05-15 Midwest Research Institue Formation of copper-indium-selenide and/or copper-indium-gallium-selenide films from indium selenide and copper selenide precursors
KR101030780B1 (ko) 2007-11-14 2011-04-27 성균관대학교산학협력단 Ⅰ－ⅲ－ⅵ２ 나노입자의 제조방법 및 다결정 광흡수층박막의 제조방법
US20090260670A1 (en) * 2008-04-18 2009-10-22 Xiao-Chang Charles Li Precursor ink for producing IB-IIIA-VIA semiconductors
US20110076798A1 (en) * 2009-09-28 2011-03-31 Rohm And Haas Electronic Materials Llc Dichalcogenide ink containing selenium and methods of making and using same
US8282995B2 (en) * 2010-09-30 2012-10-09 Rohm And Haas Electronic Materials Llc Selenium/group 1b/group 3a ink and methods of making and using same

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
US20050009225A1 (en) 2003-07-10 2005-01-13 International Business Machines Corporation Hydrazine-free solution deposition of chalcogenide films

Also Published As

Publication number Publication date
TWI431073B (zh) 2014-03-21
US20130040419A1 (en) 2013-02-14
CN102031520A (zh) 2011-04-27
KR20110034535A (ko) 2011-04-05
JP5523219B2 (ja) 2014-06-18
TW201111451A (en) 2011-04-01
US8309179B2 (en) 2012-11-13
JP2011088808A (ja) 2011-05-06
EP2305600A1 (en) 2011-04-06
CN102031520B (zh) 2013-11-06
US8563088B2 (en) 2013-10-22
EP2305600B1 (en) 2014-03-19
US20110076799A1 (en) 2011-03-31

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