KR101194653B1 - 광전변환장치 및 촬상 시스템 - Google Patents

광전변환장치 및 촬상 시스템 Download PDF

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Publication number
KR101194653B1
KR101194653B1 KR1020100014571A KR20100014571A KR101194653B1 KR 101194653 B1 KR101194653 B1 KR 101194653B1 KR 1020100014571 A KR1020100014571 A KR 1020100014571A KR 20100014571 A KR20100014571 A KR 20100014571A KR 101194653 B1 KR101194653 B1 KR 101194653B1
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South Korea
Prior art keywords
insulating film
photoelectric conversion
light
region
wiring layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020100014571A
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English (en)
Korean (ko)
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KR20100097024A (ko
Inventor
야스시 나카타
마사타카 이토
Original Assignee
캐논 가부시끼가이샤
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Publication of KR20100097024A publication Critical patent/KR20100097024A/ko
Application granted granted Critical
Publication of KR101194653B1 publication Critical patent/KR101194653B1/ko
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020100014571A 2009-02-24 2010-02-18 광전변환장치 및 촬상 시스템 Expired - Fee Related KR101194653B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009041298 2009-02-24
JPJP-P-2009-041298 2009-02-24
JPJP-P-2010-012582 2010-01-22
JP2010012582A JP5637693B2 (ja) 2009-02-24 2010-01-22 光電変換装置、及び撮像システム

Publications (2)

Publication Number Publication Date
KR20100097024A KR20100097024A (ko) 2010-09-02
KR101194653B1 true KR101194653B1 (ko) 2013-01-16

Family

ID=42630641

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100014571A Expired - Fee Related KR101194653B1 (ko) 2009-02-24 2010-02-18 광전변환장치 및 촬상 시스템

Country Status (3)

Country Link
US (1) US8330828B2 (https=)
JP (1) JP5637693B2 (https=)
KR (1) KR101194653B1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5314914B2 (ja) * 2008-04-04 2013-10-16 キヤノン株式会社 光電変換装置、撮像システム、設計方法、及び光電変換装置の製造方法
JP5663925B2 (ja) * 2010-03-31 2015-02-04 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
JP2012015424A (ja) * 2010-07-02 2012-01-19 Panasonic Corp 固体撮像装置
JP5950126B2 (ja) * 2011-07-08 2016-07-13 パナソニックＩｐマネジメント株式会社 固体撮像素子および撮像装置
KR20150089650A (ko) * 2014-01-28 2015-08-05 에스케이하이닉스 주식회사 이미지 센서 및 그 제조 방법
TWI667767B (zh) * 2014-03-31 2019-08-01 菱生精密工業股份有限公司 Package structure of integrated optical module
KR102159166B1 (ko) 2014-05-09 2020-09-23 삼성전자주식회사 색분리 소자 및 상기 색분리 소자를 포함하는 이미지 센서
FR3044466A1 (fr) * 2015-12-01 2017-06-02 Commissariat Energie Atomique Capteur d'images muni d'un dispositif de tri spectral
CN106842391A (zh) * 2015-12-03 2017-06-13 扬升照明股份有限公司 光学扩散板以及光源模组
US10983318B2 (en) 2018-08-02 2021-04-20 Visera Technologies Company Limited Optical elements
GB2576212B (en) * 2018-08-10 2021-12-29 X Fab Semiconductor Foundries Gmbh Improvements in lens layers for semiconductor devices
FR3125920B1 (fr) * 2021-07-27 2023-11-24 St Microelectronics Grenoble 2 Capteur optique

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070057934A (ko) * 2004-09-17 2007-06-07 마츠시타 덴끼 산교 가부시키가이샤 색차를 해결한 이미지 입력장치
JP2008010773A (ja) 2006-06-30 2008-01-17 Matsushita Electric Ind Co Ltd 固体撮像素子およびその製造方法
JP2009015315A (ja) 2007-06-04 2009-01-22 Sony Corp 光学部材、固体撮像装置、製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005210013A (ja) * 2004-01-26 2005-08-04 Dainippon Printing Co Ltd 固体撮像素子
JP2005311015A (ja) 2004-04-21 2005-11-04 Sony Corp 固体撮像素子およびその製造方法
JP4130815B2 (ja) * 2004-07-16 2008-08-06 松下電器産業株式会社 半導体受光素子及びその製造方法
JP4711657B2 (ja) * 2004-09-29 2011-06-29 パナソニック株式会社 固体撮像装置
US7420610B2 (en) * 2004-12-15 2008-09-02 Matsushita Electric Industrial Co., Ltd. Solid-state imaging element, solid-state imaging device, and method for fabricating the same
JP4456040B2 (ja) * 2005-06-17 2010-04-28 パナソニック株式会社 固体撮像素子
EP2016620A2 (en) * 2006-04-17 2009-01-21 Omnivision Cdm Optics, Inc. Arrayed imaging systems and associated methods
JP5087888B2 (ja) * 2006-08-28 2012-12-05 ソニー株式会社 固体撮像装置及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070057934A (ko) * 2004-09-17 2007-06-07 마츠시타 덴끼 산교 가부시키가이샤 색차를 해결한 이미지 입력장치
JP2008010773A (ja) 2006-06-30 2008-01-17 Matsushita Electric Ind Co Ltd 固体撮像素子およびその製造方法
JP2009015315A (ja) 2007-06-04 2009-01-22 Sony Corp 光学部材、固体撮像装置、製造方法

Also Published As

Publication number Publication date
US8330828B2 (en) 2012-12-11
JP5637693B2 (ja) 2014-12-10
KR20100097024A (ko) 2010-09-02
US20100214432A1 (en) 2010-08-26
JP2010226090A (ja) 2010-10-07

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