KR101191731B1 - Stripper composition for photo-resist - Google Patents
Stripper composition for photo-resist Download PDFInfo
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- KR101191731B1 KR101191731B1 KR1020120057231A KR20120057231A KR101191731B1 KR 101191731 B1 KR101191731 B1 KR 101191731B1 KR 1020120057231 A KR1020120057231 A KR 1020120057231A KR 20120057231 A KR20120057231 A KR 20120057231A KR 101191731 B1 KR101191731 B1 KR 101191731B1
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- 239000000203 mixture Substances 0.000 title claims abstract description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 25
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims abstract description 23
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims abstract description 18
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 235000014113 dietary fatty acids Nutrition 0.000 claims abstract description 9
- 239000000194 fatty acid Substances 0.000 claims abstract description 9
- 229930195729 fatty acid Natural products 0.000 claims abstract description 9
- 150000004665 fatty acids Chemical class 0.000 claims abstract description 9
- 229920000151 polyglycol Polymers 0.000 claims abstract description 9
- 239000010695 polyglycol Substances 0.000 claims abstract description 9
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims abstract description 8
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 claims abstract description 8
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims abstract description 8
- HRKAMJBPFPHCSD-UHFFFAOYSA-N Tri-isobutylphosphate Chemical compound CC(C)COP(=O)(OCC(C)C)OCC(C)C HRKAMJBPFPHCSD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 18
- 239000002184 metal Substances 0.000 abstract description 18
- 230000007797 corrosion Effects 0.000 abstract description 14
- 238000005260 corrosion Methods 0.000 abstract description 14
- 239000010949 copper Substances 0.000 abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- 229910052802 copper Inorganic materials 0.000 abstract description 4
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 239000011733 molybdenum Substances 0.000 abstract description 3
- 239000003795 chemical substances by application Substances 0.000 description 16
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 14
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 6
- 239000003495 polar organic solvent Substances 0.000 description 6
- -1 quaternary ammonium amines Chemical class 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000008961 swelling Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000003462 sulfoxides Chemical class 0.000 description 3
- 150000003512 tertiary amines Chemical class 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- HXMVNCMPQGPRLN-UHFFFAOYSA-N 2-hydroxyputrescine Chemical compound NCCC(O)CN HXMVNCMPQGPRLN-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 150000003141 primary amines Chemical class 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- DTQVDTLACAAQTR-UHFFFAOYSA-M Trifluoroacetate Chemical compound [O-]C(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-M 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 150000001412 amines Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- NNTOJPXOCKCMKR-UHFFFAOYSA-N boron;pyridine Chemical compound [B].C1=CC=NC=C1 NNTOJPXOCKCMKR-UHFFFAOYSA-N 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 150000001923 cyclic compounds Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- LPSWFOCTMJQJIS-UHFFFAOYSA-N sulfanium;hydroxide Chemical compound [OH-].[SH3+] LPSWFOCTMJQJIS-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
본 발명은 포토레지스트 박리액 조성물에 관한 것으로, 비양자성 극성유기용매를 사용하지 않고 알루미늄, 몰리브덴, 구리와 같은 금속막에 대하여 영향을 주지 않으면서도 포토레지스트를 효과적으로 제거할 수 있는 포토레지스트 박리액 조성물에 관한 것이다.
The present invention relates to a photoresist stripper composition, wherein a photoresist stripper composition capable of effectively removing a photoresist without using an aprotic polar organic solvent without affecting a metal film such as aluminum, molybdenum, and copper. It is about.
반도체 산업과 LCD, PDP와 OLED와 같은 평판 디스플레이 산업분야를 포함한 전자 디바이스 제조분야에는 일정한 패턴(회로)을 형성하는데 포토리소그라피(Rhoto-Lithography) 공정이 널리 사용되고 있다. 포토리소그라피 기술 공정의 구성은 레지스트의 도포, 노광, 현상, 에칭과 잔여 레지스트의 박리 단계로 구성된다. 에칭에 의하여 일정한 패턴을 형성하고 난 후 금속패턴 위에 존재하는 레지스트 물질을 박리제를 사용하여 제거한다.Photolithography (Rhoto-Lithography) processes are widely used to form certain patterns (circuits) in the semiconductor device and electronic device manufacturing sectors, such as LCD, PDP and OLED. The composition of the photolithographic process consists of the application of resist, exposure, development, etching and exfoliation of the remaining resist. After forming a certain pattern by etching, the resist material present on the metal pattern is removed using a release agent.
미국 특허공보 제4,904,571호는 용매(물, 알코올, 에테르, 케톤 등), 상기 용매에 용해되는 알칼리성 화합물(1차, 2차, 3차 아민, 4급 아민,환식 아민, 폴리아민, 4급 암모늄 아민, 술포늄 히드록사이드, 알칼리 히드록사이드 등)및 상기 용매에 용해되는 보로히드라이드 화합물(소듐 보로 하이드라이드, 피리딘 보론)을 함유하는 인쇄회로기판 포토레지스트 박리제를 개시하고 있다. 미국특허공보 제5,478,443 및 미국특허공보 제5,320,709호는 특정 유기 부식 방지제(글리콜 및 디메틸 설폭사이드) 및 불소- 함유 화합물 (암모늄 플루오라이드, 플루오르화 수소산, 퍼플루오르산 등)을 사용하여 금속 부식 문제점을 해결할 것을 제안하고 있다. 그러나 이들 조성물은 다량의 유기 용매가 필요하며, 따라서 다량의 폐기물을 처리해야 하는 단점을 가지고 있다.U.S. Patent No. 4,904,571 discloses solvents (water, alcohols, ethers, ketones, etc.), alkaline compounds dissolved in the solvent (primary, secondary, tertiary amines, quaternary amines, cyclic amines, polyamines, quaternary ammonium amines). , A sulfonium hydroxide, an alkali hydroxide, and the like) and a borohydride compound (sodium borohydride, pyridine boron) dissolved in the solvent is disclosed. U.S. Patent No. 5,478,443 and U.S. Patent No. 5,320,709 use certain organic corrosion inhibitors (glycol and dimethyl sulfoxide) and fluorine-containing compounds (ammonium fluoride, hydrofluoric acid, perfluoric acid, etc.) to address metal corrosion problems. It is suggested to solve. However, these compositions have a disadvantage of requiring a large amount of organic solvent and thus treating a large amount of waste.
한국특허공개 제2000-8103호에는 알칸올아민 + 설폭사이드 + 글리콜에테르 + 피롤리돈으로 이루어지는 포토레지스트 스트리퍼 조성물을 개시하고 있다. 상기 특허에서는 알칸올아민이 15 중량 %를 초과하거나, 설폭사이드 또는 설폰화합물이 35 중량 % 미만이면 LCD 전막질과의 흡수성이 작아지고, 접촉각이 커져서 에어 나이프에 의한 박리성능이 저하된다고 기술하고 있다. 일본 공개특허공보 소64-42653호는 디메틸 설폭사이드 50 중량 %이상, 혹은 70 중량%이상 포함하고, 디에틸렌글리콜 모노알킬에테르, 디에틸렌글리콜 디알킬에테르, 1,3-디메틸-2-이미다졸리디논 및 감마-부티로락톤으로부터 선택된 적어도 1종의 용제 1~50 중량% 및 모노에탄올아민 등의 함질소 유기 히드록실 화합물 0.1~5 중량%을 포함하는 포토레지스트용 박리액 조성물을 제안하고 있다. 이 특허에서는 디메틸 설폭사이드가 50 중량% 미만일 경우에는 박리성이 현저히 저하되고, 함질소 유기 히드록실 화합물 용제가 5 중량%을 초과하면 알루미늄 등의 금속층이 부식된다고 기술하고 있다. 이들 특허에서는 설폭사이드와 질소계 고리화합물의 비양자성 극성유기용매를 사용하고 있다. Korean Patent Publication No. 2000-8103 discloses a photoresist stripper composition consisting of alkanolamine + sulfoxide + glycol ether + pyrrolidone. The patent describes that if the alkanolamine is more than 15% by weight, or the sulfoxide or sulfone compound is less than 35% by weight, the absorbency with the LCD film is reduced, and the contact angle is increased, thereby degrading peeling performance by the air knife. . Japanese Laid-Open Patent Publication No. 64-42653 contains more than 50% by weight, or more than 70% by weight of dimethyl sulfoxide, diethylene glycol monoalkyl ether, diethylene glycol dialkyl ether, 1,3-dimethyl-2-imida. A peeling liquid composition for photoresists comprising 1 to 50% by weight of at least one solvent selected from zolidinone and gamma-butyrolactone and 0.1 to 5% by weight of a nitrogen-containing organic hydroxyl compound such as monoethanolamine is proposed. . This patent describes that when the dimethyl sulfoxide is less than 50% by weight, the peelability is significantly lowered, and when the nitrogen-containing organic hydroxyl compound solvent is more than 5% by weight, metal layers such as aluminum corrode. These patents use aprotic polar organic solvents of sulfoxides and nitrogen-based cyclic compounds.
이러한 비양자성 극성유기용매는 매우 고가일 뿐만 아니라 환경 유해물질이고, 고분자 물질에 대한 반응성과 용해력이 충분하지 못하여 오버코트를 포함한 유기막에 대한 박리 능력이 충분하지 못하고, 잔류물을 없애기 위해서는 추가의 유기용제에 의한 세정공정이 필요하다.These aprotic polar organic solvents are not only very expensive but also harmful to the environment, they do not have sufficient reactivity and dissolvability for high molecular materials, and thus have insufficient peeling ability for organic membranes including overcoats. A washing process with a solvent is necessary.
한국특허공개 제2001-65038호에는 TFT-LCD 하판의 배선막을 형성할 때 포토레지스트를 스트리퍼로 제거하고 증류수에 세척하기 전에 세정보조제로서 테트라메틸암모늄하이드록사이트("TMAH")를 개시하고 있다. 상기 특허에서 KOH와 TMAH 각각은 포토레지스트 스트리퍼와 스프리핑 후 세정보조제로서 사용하는 경우를 예시하고 있으나 불량처리 된 TFT-LCD상판의 모든 적층층을 없애는데 사용되기에는 충분히 효율적이지 못할 뿐만 아니라 안정적이지 못하다.Korean Patent Laid-Open No. 2001-65038 discloses tetramethylammonium hydroxide ("TMAH") as a fine aid before removing a photoresist with a stripper and washing in distilled water when forming a wiring film of a TFT-LCD lower plate. In the above patents, KOH and TMAH each illustrate the use of a photoresist stripper and a post-split cleaning aid, but they are not efficient enough and not stable enough to be used to remove all laminated layers of defective TFT-LCD tops. .
상기의 선행기술들은 고가의 화학제품을 사용함으로 경제적인 요소가 중요한 재생처리에서 채용되기에는 문제가 있고 이들 자체가 환경 유해물질로서 폐기 처리시에 별도의 비용이 추가된다. 또한, 박리 단계 후에 잔류 박리액 조성물에 의한 재생 유리판의 부식을 방지하기 위하여 별도의 용제를 중간 세정 단계에 도입하면 추가적인 비용이 발생하고 공정 작업상에 불량요인의 변수로 남을 가능성이 있다. The above prior arts are problematic in that economical factors are employed in important regeneration treatments by using expensive chemicals, and these are themselves environmentally hazardous substances, and additional costs are added to the disposal treatments. In addition, if a separate solvent is introduced into the intermediate cleaning step to prevent corrosion of the regenerated glass plate by the residual stripping liquid composition after the peeling step, there is a possibility that additional cost is incurred and remains a variable in the process operation.
대한민국 공개특허 제 2007-0111870호와 제 2009-0078867호와 제 2010-0122001호에는 물을 포함하는 포토레지스트 박리액 조성물을 개시하고 있다. 그러나 상기의 박리제들은 금속막의 부식을 방지하기 위해서 부식방지제를 필연적으로 사용해야 하고, 극성유기용제를 필수 구성성분으로 사용하여야만 한다.
Korean Unexamined Patent Publication Nos. 2007-0111870, 2009-0078867, and 2010-0122001 disclose a photoresist stripper composition comprising water. However, in order to prevent corrosion of the metal film, the above release agents must necessarily use a corrosion inhibitor and a polar organic solvent as an essential component.
본 발명은 극성 유기용제를 사용하지 않고 다량의 물을 포함하면서도 박리능력을 가지며 금속막 부식을 방지할 수 있는 수계 포토레지스트 박리액 조성물을 제공하기 위한 것이다.
The present invention is to provide a water-based photoresist stripper composition containing a large amount of water without using a polar organic solvent, having a peeling ability and can prevent metal film corrosion.
본 발명에 의하여, 디에틸렌글리콜모노에틸에테르, 에틸렌글리콜모노메틸에테르 또는 이들의 혼합물 25.0 내지 65.0중량%; 아미노에틸에탄올아민 5.0 내지 15.0중량%; 모노에탄올아민 0.1 내지 1.0중량%; 지방산알콜폴리글리콜에테르 0.1 내지 10.0중량%;및 잔량의 물을 포함하는 포토레지스트 박리액 조성물이 제공된다. According to the present invention, 25.0 to 65.0 wt% of diethylene glycol monoethyl ether, ethylene glycol monomethyl ether or a mixture thereof; 5.0-15.0 wt% aminoethylethanolamine; 0.1 to 1.0 wt% monoethanolamine; There is provided a photoresist stripper composition comprising a fatty acid alcohol polyglycol ether 0.1 to 10.0% by weight; and a residual amount of water.
본 발명에서 디에틸렌글리콜모노에틸에테르는, 바람직하게는 15.0 내지 35.0중량%, 가장 바람직하게는 15.0 내지 20.0중량%이고 에틸렌글리콜모노메틸에테르는 바람직하게는, 10.0 내지 30.0중량%이고 가장 바람직하게는, 15.0 내지 20.0중량%이고 아미노에틸에탄올아민("AEEA")은 바람직하게는, 7.0 내지 13.0중량%이고, 모노에탄올아민("MEA")은 바람직하게는, 0.25 내지 0.35중량%이고 디에틸렌글리콜, 지방산알콜폴리글리콜에테르과 트리이소부틸포스페이트는, 바람직하게는 각각 2.0 내지 7.0중량%이다. 디에틸렌글리콜와 트리이소부틸포스페이트는 가장 바람직하게는 중량으로 대략 1: 1: 1이다. In the present invention, diethylene glycol monoethyl ether is preferably 15.0 to 35.0% by weight, most preferably 15.0 to 20.0% by weight, and ethylene glycol monomethyl ether is preferably 10.0 to 30.0% by weight and most preferably , 15.0 to 20.0 wt% and aminoethylethanolamine (“AEEA”) is preferably 7.0 to 13.0 wt%, and monoethanolamine (“MEA”) is preferably 0.25 to 0.35 wt% and diethylene glycol , Fatty acid alcohol polyglycol ether and triisobutyl phosphate are preferably 2.0 to 7.0% by weight, respectively. Diethylene glycol and triisobutyl phosphate are most preferably approximately 1: 1 by weight.
본 발명에서는 '박리액 조성물'은 간단히 '박리제'라고도 표현한다.In the present invention, the 'peel composition' is also simply referred to as 'peeling agent'.
본 발명의 포토레지스트 박리액 조성물에서 디에틸렌글리콜 모노에틸에테르[Diethylenglycolmonoethylether, EDG] 와 에틸렌글리콜모노메틸에테르 (Ethyleneglycolmonomethylether 또는 2-methoxyethanol, 또는 Methyl cellosolve)는 레지스트의 레진을 박리제 내에 안정적으로 용해시켜 재석출을 방지하는 주된 역할을 수행하며, 디에틸렌글리콜 모노에틸에테르[Diethylenglycolmonoethylether, EDG]와 에틸렌글리콜모노메틸에테르를 혼용하여 사용할 수 있으며, 하나만 사용할 경우는 디에틸렌글리콜모노에틸에테르[Diethylenglycolmonoethylether, EDG]이 바람직하다. In the photoresist stripper composition of the present invention, diethylene glycol monoethyl ether (EDG) and ethylene glycol monomethyl ether (Ethyleneglycolmonomethylether or 2-methoxyethanol, or Methyl cellosolve) stably dissolve the resin of the resist in the release agent and reprecipitate. It plays the main role of preventing the ethylene glycol monoethyl ether [Diethylenglycolmonoethylether, EDG] and ethylene glycol monomethyl ether can be used in combination, in the case of using only one, diethylene glycol monoethyl ether [Diethylenglycolmonoethylether, EDG] is preferred. Do.
알칸올아민은 포토레지스트층에 대해서 스웰링(swelling) 작용을 하는 주된 역할을 수행하게 되며, 1차 아민과 3차 아민을 사용함으로 해서 그 효과를 극대화 할 수 있다. 1차 아민으로써 알칸올아민은 포토레지스트층에 대해서 스웰링(swelling) 개시 작용을 하며 3차 아민인 아미노에틸에탄올아민은 스웰링을 더 진행시키는 역할을 수행하게 된다. 모노에탄올아민은 레지스트의 노볼락 구조를 끊어 스웰링을 개시하는 데 필수적이지만 1.0중량% 이상의 양으로 사용하면 Ph가 높아지면서 금속막의 부식을 초래한다. 본 발명에서는 아미노에틸에탄올아민을 5.0 내지 15.0중량%의 양으로 사용하여 노볼락 사슬 끊김을 진행시키고 박리제 pH를 12.6 이하로 유지하여 금속막, 예를 들면 Cu 막의 부동태를 유도하여 부식을 방지한다.Alkanolamine plays a major role of swelling (swelling) to the photoresist layer, it can be maximized by using a primary amine and a tertiary amine. As the primary amine, alkanolamine acts as a swelling initiation for the photoresist layer, and aminoethylethanolamine, the tertiary amine, serves to further advance swelling. Monoethanolamine is essential for initiating swelling by breaking the novolak structure of the resist, but when used in an amount of 1.0% by weight or more, the Ph is high and causes corrosion of the metal film. In the present invention, aminoethylethanolamine is used in an amount of 5.0 to 15.0% by weight to promote novolak chain breakage and maintain a release agent pH of 12.6 or less to induce passivation of a metal film, for example, a Cu film, to prevent corrosion.
안정제로서 사용되는 지방산알콜폴리글리콜에테르는 디에틸렌글리콜과 트리이소부틸포스페이트의 3 가지 화합물로 조합물 A로 구성할 수 있다. 이 때 대략 중량비로 1:1:1 사용되는 것이 가장 바람직하다. The fatty acid alcohol polyglycol ether used as a stabilizer may be composed of the combination A with three compounds of diethylene glycol and triisobutyl phosphate. In this case, it is most preferable to use 1: 1: 1 in approximately weight ratio.
본 발명의 박리액 조성물은 약 30 ℃ 이하의 실온에서 적용이 가능하고, 승온 시 보다 우수한 효과를 얻을 수 있다. 박리의 보다 바람직한 온도는 35 내지 50℃ 이며, 좀더 바람직하게는 37 내지 45℃이다.
The peeling liquid composition of this invention is applicable at room temperature of about 30 degrees C or less, and can obtain the more excellent effect at the time of temperature rising. More preferable temperature of peeling is 35-50 degreeC, More preferably, it is 37-45 degreeC.
본 발명의 포토레지스트 박리액 조성물은 비양자성 극성유기용매를 사용하지 않고 다량의 물을 포함하면서도 Al 또는 Mo 그리고 Cu 금속막의 부식을 방지하면서 효과적인 박리를 구현할 수 있다.
The photoresist stripper composition of the present invention can realize effective peeling while containing a large amount of water without using an aprotic polar organic solvent and preventing corrosion of Al or Mo and Cu metal films.
도1은 본 발명의 실시예의 시편준비 단계에서 유리기판 위에 성막된 Cu 막을 Posi-포토레지스트로 현상처리후 소프트베이킹과 하드베이킹이 완료된 에칭 완료 후 박리제 적용 전의 시편에 대한 SEM 사진이다.
도2는 도1 시편의 단면 SEM 사진이다.
도3은 표준 시험실 박리제인 아세톤 99%에 의해 박리된 시편의 Cu 표면의 SEM 사진이다.
도4는 도3 시편의 단면 SEM 사진이다.
도5은 실시예 4의 조성물을 사용하여 박리가 완료된 시편의 Cu 표면의 SEM 사진이다.
도6은 도5 시편의 Cu 단면 SEM 사진이다. FIG. 1 is a SEM photograph of a specimen before application of a release agent after completion of etching of soft baking and hard baking after developing a Cu film formed on a glass substrate with a Posi-photoresist in a specimen preparation step of an embodiment of the present invention.
FIG. 2 is a cross-sectional SEM photograph of the specimen of FIG. 1. FIG.
3 is a SEM photograph of the Cu surface of a specimen peeled with 99% acetone, a standard laboratory release agent.
4 is a cross-sectional SEM photograph of the specimen of FIG.
FIG. 5 is a SEM photograph of the Cu surface of the specimen with peeling completed using the composition of Example 4. FIG.
6 is a SEM cross-sectional SEM photograph of the specimen of FIG.
이하, 실시예에 의하여 본 발명을 상세히 설명한다. 이러한 실시예는 본 발명을 예시하기 위한 것으로 본 발명의 범위가 이러한 실시예에 의하여 한정되는 것으로 해석되어서는 아니 된다.
Hereinafter, the present invention will be described in detail by way of examples. These examples are intended to illustrate the invention and should not be construed as limiting the scope of the invention to these examples.
시편의 형성Psalm Formation
지지체로서 소다라임 글라스를 사용하고 몰리브덴 층을 200 엉거스트롱 화학증착하고 몰리브덴 층 위에 구리 층을 1500~2000엉거스트롱 두께로 화학증착 한다. 포토레지스트는 AZ사의 1512를 사용하고 현상액으로서는 TMAH 2.38% 용액으로 현상처리 후 소프트베이킹과 하드베이킹 공정을 거쳐 시편을 준비한다. 도1에 지지체인 유리기판 위에 Cu가 성막되어 있고 Cu 막위에 Posi-포토레지스트가 패턴화 한 다음 Posi-포토레지스트는 현상처리하고 소프트베이킹과 하드베이킹을 거쳐 에칭까지 완료된 시편을 준비하였다.
Soda-lime glass is used as the support, and the molybdenum layer is 200 ungerstrong chemically deposited, and the copper layer is chemically deposited to a thickness of 1500-2000 ungerstrong. The photoresist is prepared by using AZ 1512 and developing the sample with a TMAH 2.38% solution, followed by soft baking and hard baking. Cu was deposited on the glass substrate as a support in FIG. 1, and the Posi-photoresist was patterned on the Cu film, and then the Posi-photoresist was developed, and the specimens were prepared by etching through soft baking and hard baking.
대조예1과Comparative Example 1 실시예Example 1 내지 1 to 실시예Example 21 21
대조예 1에서는 표준 시험실 박리제인 아세톤 99%를 사용하였다. In Control Example 1, 99% of acetone, a standard laboratory release agent, was used.
실시예 1 내지 실시예 21에서 포토레지스트 박리액 조성물을 다음 표1과 같은 비율로 제조하였다. 안정제(부식방지제)로서 사용되는 조합물 A는 디에틸렌글리콜; 지방산알콜폴리글리콜에테르; 트리이소부틸포스페이트의 3 가지 화합물로 중량비로 1:1:1로 사용하였다.
In Example 1 to Example 21 was prepared a photoresist stripper composition in the ratio shown in Table 1. Combination A used as a stabilizer (anticorrosive) is diethylene glycol; Fatty acid alcohol polyglycol ether; Three compounds of triisobutyl phosphate were used at a weight ratio of 1: 1: 1.
박리제의 적용Application of Release Agent
제조된 시편을 40mm*40mm 크기로 절단하여 각각의 실시예를 10회 반복하여 진행할 수 있도록 시료량을 준비하였다. 부식과 박리에 대한 표준 실험실 박리제로 아세톤 99%을 사용하여 동일한 조건에서 2분간 침지한 상태의 금속막을 대조예로 사용하였다. The prepared specimens were cut into 40 mm * 40 mm size to prepare a sample amount so that each Example can be repeated 10 times. As a control example, a metal film immersed for 2 minutes under the same conditions using 99% acetone as a standard laboratory release agent for corrosion and peeling was used.
약액의 용량이 1000ml되는 항온조를 사용하고, 실험전 약액 온도를 40도로 승온하여 15분간 유지후 박리 실험을 실시하였다. 제조 시편은 잠김정도를 일정하게 유지하기 위해 시편 고정틀에 높이 표시를 하여 시편이 박리제에 대하여 5mm정도 잠긴상태에서 항온조의 중앙에 위치하도록 하였다. 각각의 실시예에 박리 시간은 120sec로 고정하여 진행하였다. 박리실험 이후 시편은 초순수 세정을 10초간 실시하고 N2 가스로 건조한 후 시료 보관함에 넣어서 외부요인에 의한 표면 부식을 방지하였다.Using a thermostat in which the volume of the chemical solution was 1000ml, the temperature of the chemical solution was increased to 40 degrees before the experiment, and then maintained for 15 minutes. In order to keep the degree of locking uniformly, the height of the test piece was fixed on the specimen fixing frame so that the test piece was positioned at the center of the thermostat in a state of being locked about 5 mm with respect to the release agent. In each example, the peeling time was fixed at 120 sec. After the peeling test, the specimens were washed with ultrapure water for 10 seconds, dried with N2 gas, and placed in a sample storage box to prevent surface corrosion by external factors.
시험평가Evaluation
제조된 시편을 40도의 온도로 유지되는 항온조에 박리제를 담고 순환하면서 각각의 시편을 2분간 침지시켜 박리여부와 금속막 부식여부를 평가하였다.Each specimen was immersed for 2 minutes while circulating the prepared specimen in a thermostat maintained at a temperature of 40 degrees to evaluate the peeling and corrosion of the metal film.
박리 정도의 평가는 레지스트가 완벽이 존재하지 않는 상태를 정상상태로 하고 "3"의 숫자를 부여하고 일부라도 남아 있을 경우 비정상으로 하고 "0"의 숫자를 부여하여 박리정도를 구분하여 평가한다. Evaluation of the degree of peeling is evaluated by classifying the peeling degree by making the state in which the resist does not exist completely, giving a number of "3" and giving a number of "3" abnormally, and giving a number of "0".
도3은 대조예1의 아세톤 99%에 시편을 2분간 침지하여 박리한 SEM 사진이다. 도4는 대조예1의 단면 SEM 사진이다. 표준 시험실 박리제인 아세톤 99%는 박리 정도는 레지스트가 완벽이 존재하지 않는 상태인 "3"으로 부식은 발견되지 않았다. 아세톤 99%는 시험실 표준 박리제로서 실제로는 휘발성과 인화성이 강하고 열화가 빨리 진행되어 산업적 규모로 사용할 수는 없다.FIG. 3 is a SEM photograph obtained by immersing the specimen for 2 minutes in 99% acetone of Comparative Example 1. FIG. 4 is a cross-sectional SEM photograph of Comparative Example 1. FIG. 99% of acetone, a standard laboratory releasing agent, had a degree of delamination of "3" in which the resist was not completely present, and no corrosion was found. Acetone 99% is a laboratory standard releasing agent that, in practice, is highly volatile and flammable and rapidly deteriorates and cannot be used on an industrial scale.
실시예 15에서는 MEA가 1.0% 포함되어 있는 상태에서도 금속막에 영향을 주지 않음을 확인할 수 있으며, 조합물 함량이 7.0%이상이 되는 실시예 19, 20, 21의 실시예에서는 박리는 정상적으로 되었으나 약액의 경시변화가 발견되었다. 경시변화 현상은 약액 조합 후에도 액 내의 투명도가 유지되지 않고 불투명 상태를 의미한다. In Example 15, it can be seen that the metal film is not affected even when 1.0% of MEA is contained, and in Example 19, 20 and 21, where the content of the combination is 7.0% or more, the peeling is normal, but the chemical liquid Changes over time have been found. The change over time means that the transparency in the liquid is not maintained even after the chemical liquid combination is opaque.
실시예 1에서 21까지의 실험내용을 기준으로 하여 누적매수 및 약액의 유지성 및 효율성과 경제적인 부분을 고려할 때 실시예 4 가 가장 효과적이다.Example 4 is the most effective in view of the cumulative number of sheets and the retention and efficiency of the liquid and the economic part based on the experiments from Examples 1 to 21.
실시예 4를 통한 실험으로 산출된 시편의 SEM사진은 도5과 도6의 자료로 확인할 수 있다. 도5에서의 SEM사진은 Posi-PR로 덮혀 있던 부분이 박리제에 의해서 제거된 모습을 찍은 것이다. CVD공정에 의해서 증착된 금속막은 표면이 매끄럽게 구현된다. 박리제를 사용하여 PR막을 제거한 후에도 표면상태는 매끄럽고 SEM 사진 상에서 손상흔적은 발견되지 않았다. SEM찰영을 통안 육안확인 외에도 금속막의 두께를 측정하여 확인이 가능하다. 보다 확실한 것은 표면상태를 확인하는 것이 보다 정확하다.SEM images of the specimens calculated by the experiment through Example 4 can be confirmed with the data of FIGS. 5 and 6. The SEM photograph in FIG. 5 shows the part covered with Posi-PR removed by the release agent. The metal film deposited by the CVD process has a smooth surface. Even after removing the PR film using a release agent, the surface state was smooth and no damage traces were found on the SEM photograph. In addition to visual inspection through SEM scanning, the thickness of the metal film can be measured. To be sure, it is more accurate to check the surface condition.
도6은 에칭면에서의 금속막 손상여부를 확인한 사진이다. 에천트를 사용하여 영향을 받은 상태의 금속부분에서도 박리제에 대한 손상이 없이 금속막이 유지 되었다.
Figure 6 is a photograph confirming the damage of the metal film on the etching surface. Even in the metal part affected by the etchant, the metal film was maintained without damaging the release agent.
Claims (4)
The photoresist stripper composition according to claim 3, wherein the fatty acid alcohol polyglycol ether is 3.5 to 5.5 wt% and further comprises 3.5 to 5.5 wt% of diethylene glycol and triisobutyl phosphate.
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JP2012018982A (en) | 2010-07-06 | 2012-01-26 | Tosoh Corp | Resist stripping agent and stripping method using the same |
JP2012032757A (en) | 2010-07-06 | 2012-02-16 | Tosoh Corp | Resist stripping agent and stripping method using the same |
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