KR101190697B1 - Base champer for ingot growing apparatus - Google Patents

Base champer for ingot growing apparatus Download PDF

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KR101190697B1
KR101190697B1 KR1020090116963A KR20090116963A KR101190697B1 KR 101190697 B1 KR101190697 B1 KR 101190697B1 KR 1020090116963 A KR1020090116963 A KR 1020090116963A KR 20090116963 A KR20090116963 A KR 20090116963A KR 101190697 B1 KR101190697 B1 KR 101190697B1
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hole
plate
tube
welding
chamber
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KR1020090116963A
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KR20110060388A (en
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박진섭
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(주)에스테크
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

본 발명은 잉곳성장장치(Ingot Growing Apparatus)를 구성하는 베이스챔버(Base Chamber)(21)의 상부판(23)에 홀(29)을 정삭 가공한 다음 정삭가공된 튜브(30)의 상부를 튜브 삽입형으로 수밀(水密)유지되게 결합하고, 하부판(24)의 홀(31)에 튜브(30)의 하부를 결합시켜 용접함으로써 용접개소가 절반 이하로 감소되어 열변형이 적고, 정삭 가공개소도 크게 줄어 장시간 사용하더라도 용접부위의 부식으로 인한 누수 발생가능성이 50% 이하로 감소되도록 한 잉곳성장장치의 베이스챔버에 관한 것이다.

Figure 112009073773156-pat00001

잉곳성장장치, 베이스챔버, 상부판, 하부판, 황삭, 정삭, 용접, 누수, 수명

The present invention finishes the hole 29 in the upper plate 23 of the base chamber (21) constituting the ingot growing device (Ingot Growing Apparatus) and then the upper part of the finished tube 30 By inserting and holding watertightly and joining and welding the lower part of the tube 30 to the hole 31 of the lower plate 24, the welding part is reduced to less than half, so that the thermal deformation is small and the finishing machining part is also large. The present invention relates to a base chamber of an ingot growth apparatus in which the possibility of leakage due to corrosion of a welded portion is reduced to 50% or less even after long use.

Figure 112009073773156-pat00001

Ingot Growth Device, Base Chamber, Top Plate, Bottom Plate, Roughing, Finishing, Welding, Leakage, Life

Description

잉곳성장장치의 베이스챔버{BASE CHAMPER FOR INGOT GROWING APPARATUS}BASE CHAMPER FOR INGOT GROWING APPARATUS}

본 발명은 잉곳성장장치(Ingot Growing Apparatus)를 구성하는 베이스챔버(Base Chamber)에 관한 것으로, 상세하게는 베이스챔버의 상부판에 홀을 정삭 가공한 다음 정삭 가공된 튜브의 상부를 수밀(水密) 유지되게 결합하고, 하부판의 홀에 튜브의 하부를 결합시켜 용접함으로써 용접개소가 절반 이하로 감소되어 열변형이 적고, 정삭 가공개소도 크게 줄어 장시간 사용하더라도 용접부위의 부식으로 인한 누수 발생가능성이 50% 이하로 감소되도록 한 것이다.The present invention relates to a base chamber constituting the ingot growing apparatus (Ingot Growing Apparatus), and in detail, after finishing the hole in the upper plate of the base chamber, the upper part of the finished tube is watertight (水密) The joints are held together and the bottom part of the tube is welded to the lower plate to reduce the welding area to less than half, resulting in less heat deformation and greatly reducing finishing parts. It is to be reduced to less than%.

일반적으로 단결정 잉곳(Ingot)은 초크랄스키(Czochralski) 결정 성장법(CZ 법)으로 제조되며, 핫죤 영역에 설치되는 도가니에 폴리 실리콘 등의 고체 원료를 충전하고 전열히터로 가열 및 용융시켜 융액(Melt)을 만든 다음, 단결정 시드(seed)를 시드척에 매달아 멜트 융액에 접촉시킨 후 서서히 회전 및 인상시키면, 네크부(neck part), 직경이 증가하는 숄더부(shoulder part), 직경이 일정한 원기 둥 형태의 바디부(body part)의 순서로 인상되고, 마지막으로 직경이 감소하는 테일부(tail part)를 끝으로 단결정 잉곳이 얻어진다.In general, single crystal ingot is manufactured by Czochralski crystal growth method (CZ method), and a solid material such as polysilicon is charged into a crucible installed in a hot zone and heated and melted with an electrothermal heater to melt ( After the melt is formed, the single crystal seed is hung on the seed chuck and brought into contact with the melt melt, and then slowly rotated and raised, the neck part, the shoulder part with increasing diameter, and the constant diameter A single crystal ingot is obtained at the end of the tail part which is pulled up in the order of the body part of the round shape, and finally whose diameter is reduced.

상기 잉곳성장장치(또는 잉곳생산장치)는 냉각수단이 구비된 베이스챔버(메인챔버)와, 베이스챔버(Bse Champer) 내부에 설치되고 폴리 실리콘(Melt)을 용융시키는 석영도가니와, 석영도가니를 지지하는 흑연도가니와, 석영도가니와 흑연도가니를 지지하는 페데스탈과, 상기 도가니를 가열하는 전열히터와, 상기 전열히터로 대전력(大電力)을 공급하는 전원공급수단과, 상기 도가니 및 페데스탈을 지지ㆍ회전ㆍ상승ㆍ하강시키는 구동축 및 구동수단과, 베이스챔버 상부에 설치되는 돔챔버(Dome Chamber)와, 상기 돔챔버에 설치되는 게이트밸브 및 뷰포트와, 돔챔버 상부에 설치되는 풀챔버(Pull Chamber)와, 상기 풀챔버에 설치되는 잉곳(Ingot) 인상케이블 및 인상수단(Seed Mechanism)과, 진공수단, 냉각수단, 감지수단, 제어수단 및 계측수단 등으로 구성된다.The ingot growth apparatus (or ingot production apparatus) supports a base chamber (main chamber) equipped with cooling means, a quartz crucible for melting polysilicon (Melt) installed inside the base chamber (Bse Champer), and a quartz crucible. A graphite crucible, a pedestal supporting a quartz crucible and a graphite crucible, an electrothermal heater for heating the crucible, a power supply means for supplying a large power to the electrothermal heater, and supporting the crucible and the pedestal Drive shaft and drive means for rotating, raising and lowering, Dome chamber installed on the base chamber, Gate valve and viewport installed on the dome chamber, Pull chamber installed on the dome chamber And an ingot pulling cable and a seeding mechanism installed in the full chamber, and a vacuum means, a cooling means, a sensing means, a control means, a measuring means, and the like.

도 1 내지 도 3은 은 종래 잉곳성장장치에 사용된 베이스챔버(Base Champer)의 바닥판 평면도 및 그 단면도로, 수냉실(1)이 구비된 베이스챔버(2)의 하부에 상기 바닥판(3)이 위치하고, 상기 바닥판(3)은 상ㆍ하로 이격 설치되는 상ㆍ하부판(4)(5)과, 가장자리에 위치하는 테두리부재(6)와, 상ㆍ하부판(4)(5) 사이에 형성되는 수냉실(7)로 냉각수를 공급하고 배출시키는 급수구(8) 및 출수구(9)가 용접 등의 방법으로 고정되어 냉각수의 누수가 방지되며, 상ㆍ하부판(4)(5) 사이에는 각 종 부품, 예컨대 전선, 파이프, 축부재 등을 인입 및 인출시킬 수 있는 다수의 홀(Hole)(10)과 튜브(Tube)(11)가 형성되거나 설치되어 구조 및 제조과정이 복잡하며, 제작후에도 장시간 사용에 의해 특히, 용접부로 냉각수가 누수되면서 바닥판(3)의 수명이 단축되고 안전사고가 발생되는 등의 여러 문제점이 있었다.1 to 3 are plan views and cross-sectional views of a bottom plate of a base chamber used in a conventional ingot growth apparatus, wherein the bottom plate 3 is disposed below the base chamber 2 having the water cooling chamber 1. ) Is positioned, and the bottom plate 3 is disposed between the upper and lower plates 4 and 5 spaced apart from each other up and down, the edge member 6 located at the edge, and the upper and lower plates 4 and 5. The water supply port 8 and the water outlet 9 for supplying and discharging the cooling water to the formed water cooling chamber 7 are fixed by welding or the like to prevent leakage of the cooling water, and between the upper and lower plates 4 and 5. Complicated structure and manufacturing process by forming or installing a plurality of holes (10) and tubes (11) for drawing and drawing various parts, for example, wires, pipes, shaft members, etc. Even after long time use, the life of the bottom plate 3 is shortened and the safety accident occurs as the coolant leaks to the welded part. There were multiple problems.

즉, 도 2, 도 3과 같이 상부판(4)과 하부판(5) 사이에 각종 홀(10)을 황삭(Rough Grinding)가공한 다음, 황삭 가공된 튜브(11)를 상ㆍ하부판(4)(5)의 홀(10)에 각각 끼워 수밀(水密) 유지되게 용접 고정하고 있으며, 용접시에 발생하는 상부판(4) 및 하부판(5)과 튜브(11) 사이의 열변형을 보상하기 위하여 정삭(Finishing)가공을 하게 되므로 용접부(12)의 개수가 모두 매우 많고(15~20개소), 제작시간이 많이 소요될 뿐 아니라 여러번의 가공공정이 필요하여 생산성과 작업성이 떨어지는 문제점이 있었다.That is, as shown in Figs. 2 and 3, after roughing the various holes 10 between the upper plate 4 and the lower plate 5, the roughened tube 11 is subjected to the upper and lower plates 4. In order to compensate for thermal deformation between the upper plate 4 and the lower plate 5 and the tube 11 that are welded and fixed so as to be held in watertightness, respectively, in the hole 10 of (5). Since finishing (Finishing) processing, the number of welding parts 12 are all very large (15 to 20 places), not only takes a lot of manufacturing time, but also requires a number of processing steps, which has a problem in that productivity and workability are inferior.

상기 용접개소를 예로 들면, 1개의 도가니 구동축 승강홀과, 2개의 진공 파이프 배관홀과, 4개의 전원선 인입홀과, 2개의 핫죤(hot zone) 승강홀 등이 형성되며, 상기 홀에는 황삭가공된 튜브(11)가 각각 결합되어 용접 고정된다.Taking the welding spot as an example, one crucible driving shaft lifting hole, two vacuum pipe piping holes, four power line inlet holes, two hot zone lifting holes, and the like are formed, and the rough machining is performed in the hole. Tubes 11 are respectively joined and welded together.

본 발명은 잉곳성장장치(Ingot Growing Apparatus)를 구성하는 베이스챔버의 상부판에 홀을 정삭 가공한 다음 정삭 가공된 튜브의 상부를 수밀(水密) 유지되게 결합하고, 하부판의 홀에 튜브의 하부를 결합시켜 용접함으로써 용접개소가 절반 이하로 감소되어 열변형이 적고, 정삭 가공개소도 크게 줄어 장시간 사용하더라도 용접부위의 부식으로 인한 누수 발생가능성이 50% 이하로 감소되도록 한 잉곳 성장장치의 베이스챔버를 제공함에 목적이 있다.The present invention finish machining the hole in the upper plate of the base chamber constituting the ingot growing device (Ingot Growing Apparatus) and then coupled to maintain the water-tight (top) of the finished tube, the bottom of the tube in the hole of the lower plate By joining and welding, the welding chamber is reduced to less than half, so that the thermal deformation is small, and the finishing machining area is greatly reduced. Even if it is used for a long time, the base chamber of the ingot growth apparatus which reduces the possibility of leakage due to corrosion of the welding site is less than 50%. The purpose is to provide.

본 발명은 잉곳성장장치를 구성하는 베이스챔버의 바닥판을 상ㆍ하부판과 테두리부재로 수밀(水密)되도록 구성하되, 상기 상부판에 정삭 가공되는 복수의 홀을 형성하고, 상기 하부판에 정삭 또는 황삭 가공되는 복수의 홀을 형성하고, 상기 상부판의 홀에 결합되는 정삭 가공된 튜브의 상부를 결합하고, 상기 하부판의 홀에 튜브의 하부를 결합한 다음 수밀(水密) 유지되게 용접하여 구성된다.The present invention is configured such that the bottom plate of the base chamber constituting the ingot growth apparatus is watertight with the upper and lower plates and the rim member, and forms a plurality of holes to be finished in the upper plate, and finishing or roughing the lower plate. It forms a plurality of holes to be processed, and joins the upper part of the finished tube coupled to the hole of the upper plate, and combines the lower part of the tube to the hole of the lower plate and then welded to maintain watertight.

또한 본 발명은 상부판을 튜브 삽입형태의 모양으로 가공한 다음 하부판을 결합시켜 용접하는 구조이므로 용접개소가 10곳이나 되어 열변형이 작고 정삭 가공개소도 작아 장시간 사용시 용접부위의 부식으로 인한 누수 발생가능성이 50% 이하로 감소되도록 함을 특징으로 한다.In addition, in the present invention, the upper plate is processed in the shape of a tube insertion form, and then the lower plate is combined to weld, so that the number of welding sites is 10, the heat deformation is small, and the finishing processing location is small. Characterized by a likelihood that the probability is reduced to less than 50%.

본 발명은 상부판을 튜브 삽입 구조로 가공한 다음 하부판을 용접 고정함으로써 용접 개소가 10개소로 대폭 축소되어 열변형이 적고, 정삭 가공량도 작아, 장 기간 사용시 용접부위의 부식으로 인한 냉각수 누수 발생 가능성이 50% 이하로 감소되는 효과가 있다.According to the present invention, the upper plate is processed into a tube insert structure, and the lower plate is welded and fixed, thereby significantly reducing the welding point to 10 places, thereby reducing heat deformation and reducing the finishing amount, resulting in leakage of cooling water due to corrosion of the welded part during long-term use. The effect is reduced to less than 50%.

또한 본 발명은 제조공정의 복잡함을 단순화하고 가공정밀도를 높여 사후 문제발생가능성이 현저히 없어지는 효과가 있다.In addition, the present invention has the effect of simplifying the complexity of the manufacturing process and increasing the processing precision significantly eliminates the possibility of post-problem.

또한 본 발명은 잉곳성장장치의 베이스챔버 바닥판의 냉각효율이 크게 향상되고, 쉽게 가공할 수 있으며, 가공 정밀도가 향상되어 사용 수명이 연장되는 효과가 있는 매우 유용한 발명이다.In addition, the present invention is a very useful invention that the cooling efficiency of the base chamber bottom plate of the ingot growth apparatus is greatly improved, can be easily processed, the processing precision is improved and the service life is extended.

이하, 본 발명의 바람직한 실시 예들을 첨부한 도면에 따라 상세히 설명하고자 한다. 본 발명의 실시 예들을 설명함에 있어 도면들 중 동일한 구성 요소들은 가능한 한 동일 부호로 기재하고, 관련된 공지구성이나 기능에 대한 구체적인 설명은 본 발명의 요지가 모호해지지 않도록 생략한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In describing the embodiments of the present invention, the same components in the drawings are denoted by the same reference numerals as much as possible, and detailed descriptions of related known configurations or functions will be omitted so as not to obscure the subject matter of the present invention.

도 4 내지 도 6은 잉곳성장장치를 구성하는 베이스챔버(Base Champer)(21)의 바닥판(20) 평면도 및 그 단면도로, 수냉실(22)이 구비된 베이스챔버(21)의 하부에 상기 바닥판(20)이 위치하고, 상기 바닥판(20)은 상ㆍ하로 이격 설치되는 상ㆍ하부판(23)(24)과, 가장자리에 위치하는 테두리부재(25)와, 상ㆍ하부판(23)(24) 사이에 형성되는 수냉실(26)로 냉각수를 공급하고 배출시키는 급수구(27) 및 출수구(28)가 용접 등의 방법으로 고정되어 냉각수의 누수가 방지되며, 상ㆍ하부판(23)(24) 사이에는 각종 부품, 예컨대 전선, 파이프, 축부재 등을 인입 및 인출시킬 수 있는 다수의 홀(Hole)과 튜브(Tube)가 형성되거나 설치되며, 본 발명에서 상부판(23)에 형성되는 홀(29)은 정삭 가공된 다음 도 5와 같이 정삭 가공된 튜브(30)의 상부가 삽입되는 형태로 가공되며, 하부판(24)에 형성되는 홀(31)은 상부판에(23)에 형성되는 홀(29)보다 크게 정삭 가공되어 튜브(30)의 하부가 결합된 다음 수밀(水密) 되도록 용접 고정함으로써 용접개소가 종래 바닥판(3)에 비하여 절반 이하로 감소되어 열변형이 적고 정삭 가공개소도 크게 줄어 장시간 사용하더라도 용접부위의 부식으로 인한 누수 발생가능성이 50% 이하로 감소된다.4 to 6 are plan views and cross-sectional views of the bottom plate 20 of the base chamber 21 that constitutes the ingot growth apparatus, and the lower portion of the base chamber 21 having the water cooling chamber 22. The bottom plate 20 is located, and the bottom plate 20 is provided with upper and lower plates 23 and 24 spaced apart up and down, edge members 25 positioned at edges, and upper and lower plates 23 ( The water supply port 27 and the water outlet 28 for supplying and discharging the cooling water to the water cooling chamber 26 formed between the 24 are fixed by welding or the like to prevent leakage of the cooling water, and the upper and lower plates 23 ( 24, a plurality of holes (Hole) and tubes (Tube) are formed or installed to draw and withdraw various components, such as wires, pipes, shaft members, etc., which are formed in the upper plate 23 in the present invention The hole 29 is finished and then processed into a shape in which an upper part of the finished tube 30 is inserted as shown in FIG. 5, and is formed in the lower plate 24. The hole 31 is finished larger than the hole 29 formed in the upper plate 23 so that the lower part of the tube 30 is joined and welded to fix the watertight so that the welding spot is conventionally the bottom plate 3. It is reduced to less than half compared to less than the heat deformation and the finishing process is greatly reduced, even if used for a long time, the possibility of water leakage due to corrosion of the welded portion is reduced to less than 50%.

또한, 구조와 제조과정이 보다 단순하며, 제작후에도 장시간 사용에 의해 특히, 용접부로 냉각수가 누수되는 현상이 거의 없어 바닥판(20)의 수명이 크게 연장되며, 안전사고가 발생하지 않게된다.In addition, the structure and the manufacturing process is simpler, and even after manufacturing, the use of a long time after the use, in particular, there is almost no phenomenon that the coolant leaks to the weld portion greatly extends the life of the bottom plate 20, and no safety accidents occur.

본 발명은 튜브(30)의 상부와 상부판(23)에 형성되는 홀(29)은 정삭 가공된 다음 튜브삽입형으로 억지결합되며, 정삭 가공 결합에 의해 누수가 방지되고 용접이 불필요하므로 하부판(24) 보다 상대적으로 열스트레스가 많은 상부판(23)의 용접이 불필요하게되며, 하부판(24)의 홀(31)에 튜브(30) 하부를 결합시킨 다음 용접 고정하므로 용접개소와 가공개소가 절반으로 줄어들게되며, 이들 용접부로 인한 냉 각수 누수가 50% 이하로 크게 감소된다.According to the present invention, the holes 29 formed in the upper part of the tube 30 and the upper plate 23 are finished and then press-fitted into the tube insert type, and the lower plate 24 is prevented from leaking by the finishing process joining and welding is unnecessary. Since the welding of the upper plate 23, which is relatively more thermally stressed, is unnecessary, the lower portion of the tube 30 is joined to the hole 31 of the lower plate 24, and then welded and fixed. The leakage of cooling water due to these welds is greatly reduced to less than 50%.

또한 종래에는 바닥판(3)의 상ㆍ하부판(4)(5)에 홀을 형성할 때 열팽창계수를 감안하여 황삭 가공한 다음 용접 후 정삭 가공하게 되므로, 가공량과 작업량이 많아 생산원가가 상승되지만, 본 발명에서는 이러한 현상들이 일소된다.In addition, conventionally, when forming holes in the upper and lower plates 4 and 5 of the bottom plate 3, roughing is performed in consideration of the coefficient of thermal expansion, and then finished after welding, thereby increasing production cost and work volume. However, these phenomena are eliminated in the present invention.

이상과 같이 설명한 본 발명은 본 실시 예 및 첨부된 도면에 한정되는 것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위내에서 여러가지 치환, 변형 및 변경이 가능하며, 이는 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 있어 자명한 것이다.The present invention as described above is not limited to the present embodiment and the accompanying drawings, various substitutions, modifications and changes are possible within the scope without departing from the technical spirit of the present invention, which is usually in the art It is self-evident for those who have knowledge.

도 1 : 종래 발명의 평면도.1 is a plan view of a conventional invention.

도 2 : 종래 발명의 단면도.2 is a cross-sectional view of a conventional invention.

도 3 : 종래 발명의 분해 단면도.3 is an exploded cross-sectional view of a conventional invention.

도 4 : 본 발명 일 예로 도시한 평면도.4 is a plan view showing an example of the present invention.

도 5 : 본 발명 일 예로 도시한 단면도.5 is a cross-sectional view showing an example of the present invention.

도 6 : 본 발명 일 예로 도시한 분해 단면도.6 is an exploded cross-sectional view showing an example of the present invention.

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

(20)--바닥판 (21)--베이스챔버(20)-bottom plate (21)-base chamber

(22)--수냉실 (23)--상부판(22)-Water Cooling Room (23)-Top Plate

(24)--하부판 (25)--테두리부재(24)-Bottom Plate (25)-Border

(26)--수냉실 (27)--급수구(26)-Water Cooling Room (27)-Water Supply

(28)--출수구 (29)(31)--홀(28)-Outlet (29) (31)-Hall

(30)--튜브 30--Tube

Claims (1)

상ㆍ하부판에 수밀 결합되는 테두리부재, 상ㆍ하부판에 사이에 형성되는 수냉실로 냉각수를 공급 및 배출시키는 급수구와 출수구, 상기 상ㆍ하부판 사이에 형성 및 설치되는 홀과 튜브로 구성된 잉곳성장장치의 베이스챔버에 있어서;The base of the ingot growth apparatus consisting of a frame member which is watertightly coupled to the upper and lower plates, a water supply port and an outlet for supplying and discharging cooling water to a water cooling chamber formed between the upper and lower plates, and holes and tubes formed and installed between the upper and lower plates. In a chamber; 상기 상부판(23)에 정삭 가공되는 복수의 홀(29),A plurality of holes 29 to be finished in the upper plate 23, 상기 하부판(24)에 정삭 가공되는 복수의 홀(31),A plurality of holes 31 to be finished in the lower plate 24, 상기 상부판(23)의 홀(29)에 결합되는 정삭 가공된 튜브(30)의 상부, 및An upper part of the finished tube 30 coupled to the hole 29 of the upper plate 23, and 상기 하부판(24)의 홀(31)에 결합되는 튜브(30)의 하부를 포함하되, It includes a lower portion of the tube 30 coupled to the hole 31 of the lower plate 24, 상기 하부판(24)에 형성되는 홀(31)은 상부판에(23)에 형성되는 홀(29)보다 크게 정삭 가공되어 튜브(30)의 하부가 결합된 다음 수밀되게 용접 고정함으로써 용접개소와 정삭가공개소가 감소되어 열변형이 적고 누수가 감소되도록 함을 특징으로 하는 잉곳성장장치의 베이스챔버.The hole 31 formed in the lower plate 24 is finished larger than the hole 29 formed in the upper plate 23 so that the lower portion of the tube 30 is joined and then welded tightly and welded to finish the welding spot. The base chamber of the ingot growth apparatus, characterized in that the processing location is reduced, so that the thermal deformation is small and the leakage is reduced.
KR1020090116963A 2009-11-30 2009-11-30 Base champer for ingot growing apparatus KR101190697B1 (en)

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KR100492281B1 (en) * 2004-11-15 2005-05-27 퀄리플로나라테크 주식회사 Cooling system for chamber of ingot growth arrangement

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KR100492281B1 (en) * 2004-11-15 2005-05-27 퀄리플로나라테크 주식회사 Cooling system for chamber of ingot growth arrangement

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