KR101189899B1 - 알루미늄막 연마용 연마액 및 이것을 이용한 알루미늄막의 연마방법 - Google Patents

알루미늄막 연마용 연마액 및 이것을 이용한 알루미늄막의 연마방법 Download PDF

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Publication number
KR101189899B1
KR101189899B1 KR1020117025350A KR20117025350A KR101189899B1 KR 101189899 B1 KR101189899 B1 KR 101189899B1 KR 1020117025350 A KR1020117025350 A KR 1020117025350A KR 20117025350 A KR20117025350 A KR 20117025350A KR 101189899 B1 KR101189899 B1 KR 101189899B1
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South Korea
Prior art keywords
polishing
aluminum film
acid
polishing liquid
liquid
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Korean (ko)
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KR20110120990A (ko
Inventor
히로시 오노
토라노스케 아시자와
야스오 카미가타
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히다치 가세고교 가부시끼가이샤
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/02—Light metals
    • C23F3/03—Light metals with acidic solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020117025350A 2005-11-22 2006-11-14 알루미늄막 연마용 연마액 및 이것을 이용한 알루미늄막의 연마방법 Active KR101189899B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2005336938 2005-11-22
JPJP-P-2005-336938 2005-11-22
JP2006260709 2006-09-26
JPJP-P-2006-260709 2006-09-26
PCT/JP2006/322650 WO2007060859A1 (ja) 2005-11-22 2006-11-14 アルミニウム膜研磨用研磨液及びこれを用いたアルミニウム膜の研磨方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020087011430A Division KR20080059301A (ko) 2005-11-22 2006-11-14 알루미늄막 연마용 연마액 및 이것을 이용한 알루미늄막의연마방법

Publications (2)

Publication Number Publication Date
KR20110120990A KR20110120990A (ko) 2011-11-04
KR101189899B1 true KR101189899B1 (ko) 2012-10-10

Family

ID=38067090

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020117025350A Active KR101189899B1 (ko) 2005-11-22 2006-11-14 알루미늄막 연마용 연마액 및 이것을 이용한 알루미늄막의 연마방법
KR1020087011430A Ceased KR20080059301A (ko) 2005-11-22 2006-11-14 알루미늄막 연마용 연마액 및 이것을 이용한 알루미늄막의연마방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020087011430A Ceased KR20080059301A (ko) 2005-11-22 2006-11-14 알루미늄막 연마용 연마액 및 이것을 이용한 알루미늄막의연마방법

Country Status (5)

Country Link
US (1) US7887609B2 (enExample)
JP (2) JP5090925B2 (enExample)
KR (2) KR101189899B1 (enExample)
TW (1) TW200730613A (enExample)
WO (1) WO2007060859A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4922019B2 (ja) * 2007-03-06 2012-04-25 株式会社東芝 半導体装置の製造方法
KR101279963B1 (ko) * 2008-12-24 2013-07-05 제일모직주식회사 금속 배선 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
JP5294202B2 (ja) * 2009-02-10 2013-09-18 セイコーインスツル株式会社 パッケージの製造方法
CN102554748B (zh) * 2010-12-23 2014-11-05 中芯国际集成电路制造(北京)有限公司 抛光方法
JP6817896B2 (ja) * 2017-05-26 2021-01-20 株式会社荏原製作所 基板研磨装置および基板研磨方法
KR102349153B1 (ko) * 2019-12-16 2022-01-10 주식회사 포스코 알루미늄 합금용 연마 용액, 그 제조방법 및 이를 이용한 연마 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002080827A (ja) 2000-02-09 2002-03-22 Jsr Corp 化学機械研磨用水系分散体

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4944836A (en) * 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
TWI296006B (enExample) * 2000-02-09 2008-04-21 Jsr Corp
US6569215B2 (en) * 2000-04-17 2003-05-27 Showa Denko Kabushiki Kaisha Composition for polishing magnetic disk substrate
TW528645B (en) * 2000-04-17 2003-04-21 Showa Denko Kk Composition for polishing magnetic disk substrate
US6568997B2 (en) * 2001-04-05 2003-05-27 Rodel Holdings, Inc. CMP polishing composition for semiconductor devices containing organic polymer particles
JP2005136256A (ja) * 2003-10-31 2005-05-26 Sumitomo Bakelite Co Ltd 研磨用組成物
JP2005158867A (ja) * 2003-11-21 2005-06-16 Jsr Corp 化学機械研磨用水系分散体を調製するためのセット
KR20080022235A (ko) * 2004-04-12 2008-03-10 히다치 가세고교 가부시끼가이샤 금속용 연마액 및 이것을 이용한 연마방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002080827A (ja) 2000-02-09 2002-03-22 Jsr Corp 化学機械研磨用水系分散体

Also Published As

Publication number Publication date
US7887609B2 (en) 2011-02-15
KR20080059301A (ko) 2008-06-26
TW200730613A (en) 2007-08-16
JP2011228728A (ja) 2011-11-10
JPWO2007060859A1 (ja) 2009-05-07
JP5090925B2 (ja) 2012-12-05
US20070141957A1 (en) 2007-06-21
WO2007060859A1 (ja) 2007-05-31
TWI326706B (enExample) 2010-07-01
KR20110120990A (ko) 2011-11-04

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