KR101135081B1 - Apparatus and method for treating substrates - Google Patents

Abstract

The substrate processing apparatus includes an etching portion and a substrate drying portion. The etching unit processes the substrate by spraying the etchant on the substrate, and heats the dry gas using heat generated in the process of processing the substrate. The substrate drying unit receives the heated dry gas from the etching unit to dry the substrate. As such, since the substrate is dried using the dry gas heated in the etching unit, the substrate treating apparatus may reduce the drying failure and the process time of the substrate, and improve the yield of the product.

Description

Substrate processing apparatus and method {APPARATUS AND METHOD FOR TREATING SUBSTRATES}

The present invention relates to an apparatus and a method for processing a substrate, and more particularly, to a substrate processing apparatus and a method for manufacturing a substrate used for a flat panel display device.

Recently, TFT-LCDs have been spotlighted as various display devices due to various advantages such as small size / light weight, wide viewing angle, low power consumption, and the like.

The TFT-LCD manufacturing process is largely divided into a TFT process, a color filter (hereinafter referred to as CF) process, a cell process, and a module process. Among them, the cell process is a process of manufacturing a TFT-LCD cell (Cell) by bonding a liquid crystal between the TFT process and two glass substrates subjected to the CF process, and then cutting the glass. After the cell process, it is made to the actual panel size level and then moved to the module process. The module process is a final process for making a finished panel, and attaches a polarizing plate, a PCB, and a backlight unit to a TFT-LCD cell made of a cell process, which is called a TFT-LCD module. In other words, the TFT-LCD module is a unit set in a state in which the TFT-LCD panel and the PCB can be electrically conductive to each other by TCP.

Here, the polarizing plates attached to both surfaces of the TFT-LCD panel selectively serve to allow only the light oscillating in a certain direction to be incident and transmitted to the outside, thereby assisting the TFT-LCD to exhibit a good display function. As described above, in the product completed as the TFT-LCD module after the polarizer is attached, defective products due to foreign matter (dust, particles, adherent foreign matters, etc.) on the TFT-LCD cell surface are generated.

To prevent this, a cleaning process for cleaning the surface of the LCD panel is performed. In the cleaning process, the surface of the LCD panel is cleaned using a cleaning liquid, and then a dry gas is sprayed to dry the LCD panel. The air knife sprays dry gas in the width direction corresponding to one side of the LCD panel to dry the LCD panel.

The provided dry gas of the air knife is provided at room temperature without being heated to a temperature suitable for the process. For this reason, drying of a board | substrate is not made rapidly, a drying defect arises, and the yield of a product falls.

An object of the present invention is to provide a substrate processing apparatus capable of improving the yield of a product.

Moreover, an object of this invention is to provide the method of processing a board | substrate using said substrate processing apparatus.

A substrate processing apparatus according to one feature for realizing the object of the present invention described above comprises an etching portion and a substrate drying portion.

The etching unit processes the substrate by spraying the etchant on the substrate, and heats the dry gas using heat generated in the process of processing the substrate. The substrate drying unit receives a heated dry gas from the etching unit to dry the substrate.

The etching unit includes an etching chamber and a heating tube. The etching chamber provides a space in which the substrate is processed. A heating tube is installed on an outer wall of the etching chamber, and a flow path through which dry gas flows is provided therein, and the drying gas heated in the flow path by receiving heat generated inside the etching chamber in the process of processing the substrate. Is provided to the substrate drying unit.

The substrate drying unit includes a chamber, a transfer unit, and at least one fluid ejection unit. The chamber provides a process space in which the substrate is processed. The transfer unit is installed in the process space, the substrate is seated, and transfers the substrate. The fluid injector is disposed above or below the transfer unit in the process space, and receives the heated dry gas from the heating tube and injects the substrate onto the transfer unit.

Further, the substrate processing method according to one feature for realizing the above object of the present invention is as follows. First, an etching solution is sprayed onto the substrate to process the substrate, and the drying gas is heated using heat generated in the process of treating the substrate using the etching solution. Thereafter, the substrate is introduced into a chamber in which a drying process is performed and placed on the transfer unit. A heated dry gas is sprayed on the substrate being moved by the transfer unit to dry the substrate.

The process of heating the dry gas is as follows. First, unheated dry gas is introduced into a heating tube provided on an outer wall of an etching chamber in which a substrate is processed using the etchant. Dry gas in the heating tube is heated by the heat transmitted from the etching chamber to the heating tube while flowing along the heating tube to provide the substrate. Here, heat transferred from the etching chamber to the heating tube is generated in the process of treating the substrate inside the etching chamber.

According to the present invention described above, the substrate processing apparatus heats the dry gas using the chemical liquid without a separate heating device for heating the dry gas. Accordingly, since the substrate is dried quickly, the substrate processing apparatus can reduce the drying failure and the processing time of the substrate and improve the yield of the product.

1 is a schematic view of a substrate processing apparatus according to an embodiment of the present invention.
Figure 2 is a side view showing the drying unit shown in FIG.
3 is a side view illustrating the cleaning part and the drying part shown in FIG. 1.
4 is a plan view illustrating the transfer unit and the first air knife illustrated in FIG. 3.
5 is a flowchart illustrating a process of drying a substrate by the drying unit illustrated in FIG. 1.
FIG. 6 is a view illustrating a process of spraying dry gas by the first and second air knives shown in FIG. 3.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention. In adding reference numerals to the components of each drawing, it should be noted that the same reference numerals are used as much as possible even though they are shown in different drawings. In addition, in describing the present invention, when it is determined that the detailed description of the related well-known configuration or function may obscure the gist of the present invention, the detailed description thereof will be omitted.

1 is a view schematically showing a substrate processing apparatus according to an embodiment of the present invention, FIG. 2 is a side view showing a drying unit shown in FIG. 1, and FIG. 3 is a side view showing a cleaning unit and a drying unit shown in FIG. 1. to be.

1 to 3, the substrate processing apparatus 1000 includes an etching unit 100 for etching the substrate 10, a cleaning unit 200 for cleaning the substrate 10, and drying of the substrate 10. It may include a drying unit 300, an unloader 400 for carrying out the substrate 10 to the outside, and the gas supply unit 500. In this embodiment, the etching unit 100, the cleaning unit 200, the drying unit 300, and the unloader unit 400 may be arranged side by side in a line.

Specifically, the etching unit 100 sprays a high temperature etchant on the substrate 10 to remove and remove foreign substances on the surface of the substrate 10. The etching unit 100 includes an etching chamber 110 that provides a space in which an etching process of the substrate 10 is performed, and a heating tube 120 through which the dry gas flows from the gas supply unit 500.

The etching chamber 110 generally has a box shape and is positioned adjacent to the cleaning unit 200. Although not shown in the figure, outlets for inlet and withdrawal of the substrate 10 are formed at both sidewalls of the sidewall of the etching chamber 100 facing the cleaning unit 200. The heating tube 120 is installed on the outer surface of the remaining side walls of the etching chamber 100 in which the outlets are not formed.

The heating tube 120 is connected to the gas supply unit 500 through the gas supply line 611, and receives the dry gas CA from the gas supply unit 500. The dry gas CA introduced into the heating tube 120 is heated by heat inside the etching chamber 110. Since the etching unit 100 uses the etching solution heated to a predetermined temperature, the internal temperature of the etching chamber 110 increases during the etching process. The heat generated in the etching chamber 110 is transferred to the heating tube 120 through the sidewall of the etching chamber 110, whereby the drying gas CA inside the heating tube 120 is heated.

The heating tube 120 has a zigzag shape extending in a horizontal direction of the outer wall of the etching chamber 110, and a flow passage 121 through which dry gas CA flows is formed therein. An input end of the heating tube 120 is connected to a gas supply line 611, and a gas supply line 611 is connected to the gas supply part 500 to discharge dry gas CA discharged from the gas supply part 500. The heating tube 420 is provided. Since the dry gas CA provided from the gas supply unit 611 through the gas supply line 611 is provided without being heated, the dry gas HA beam discharged from the heating tube 120 has a low temperature.

The dry gas CA introduced into the heating tube 120 flows along the heating tube 120 and is heated by heat generated from the inside of the etching chamber 110. That is, the heat generated in the etching chamber 110 by the etching process is conducted to the etching chamber 110 to increase the surface temperature of the etching chamber 110. Heat generated from the etching chamber 110 is conducted to the heating tube 120 to increase the temperature of the heating tube 120. The dry gas CA introduced into the heating tube 120 flows along the flow path 121 and is heated by the conductive heat of the heating tube 120. Accordingly, the temperature of the drying gas HA discharged from the heating tube 120 rises above the temperature of the drying gas CA flowing into the heating tube 120.

An output end of the heating tube 120 is connected to the first gas discharge line 612, and the heated dry gas HA discharged from the heating tube 120 is dried through the first gas discharge line 612. Is provided.

On the other hand, the cleaning unit 200 by the chamber 210 to provide a space for the cleaning process is performed, the transfer unit 220 for transferring the substrate 10 introduced into the chamber 210, and the transfer unit 220 It may include a cleaning nozzle unit 230 for cleaning the substrate by spraying the cleaning liquid on the moving substrate 10.

The drying unit 300 dries the substrate 10 cleaned by the cleaning unit 400. That is, the drying unit 300 receives the dry gas HA heated in the etching unit 100 and supplies the dry gas HA to the cleaned substrate 10 to remain on the substrate 10. Dry the moisture.

In detail, the drying unit 300 may include a drying chamber 310, a substrate transfer unit 320, and first and second air knives 330 and 340. The drying chamber 310 provides a space in which the drying process of the substrate 10 is performed, and the substrate inlet 311 and the substrate 10 into which the substrate 10 is introduced are formed at both side walls facing each other. Substrate outlets 312 withdrawn from 310 are each formed.

The substrate transfer unit 320 is installed in the drying chamber 310. The substrate transfer unit 320 is installed in the drying chamber 310 and transfers the substrate 10 introduced into the drying chamber 310.

4 is a plan view illustrating the transfer unit and the first air knife illustrated in FIG. 3.

3 and 4, the substrate transfer unit 320 may include a plurality of transfer shafts 322 and rollers 324. The transfer shafts 322 are disposed below the substrate 10 on a path through which the substrate 10 is transferred. Each conveying shaft 322 extends in a direction perpendicular to the conveying direction of the substrate 10, and the conveying shafts 322 are arranged side by side parallel to each other along the conveying direction of the substrate 10. Both ends of the transfer shafts 322 are rotatably supported by the bearing member 323. Hereinafter, for convenience of description, a conveying direction of the substrate 10 is referred to as a first direction, and a direction perpendicular to the conveying direction of the substrate 10 on the plane of the substrate 10 is referred to as a second direction.

Each transfer shaft 322 is coupled with a roller 324 in contact with the substrate 10. The roller 324 has a length corresponding to the width of the substrate 10 and is installed to surround the transfer shaft 322 along the longitudinal direction of the transfer shaft 322.

The transfer shafts 322 are connected to a power transmission member 325 such as a belt-pulley assembly or gear assembly, and the power transmission member 325 is connected to a drive member 326 such as a motor to receive a driving force. When the transfer shafts 322 and the rollers 324 are rotated by the driving member 326 and the power transmission member 325, the substrate 10 seated on the substrate transfer unit 320 is the substrate 10. It is conveyed in the first direction by the friction between the lower surface and the rollers 324 and the rotational force of the rollers 324.

The first air knife 330 is installed above the substrate transfer unit 320, and the second air knife 340 is installed below the substrate transfer unit 320. The first and second air knives 330 dry the substrate 10 by spraying a dry gas, for example, air, onto the substrate 10.

The first and second air knives 330 and 340 are disposed to face each other, and the substrate 10 is dried by spraying a dry gas heated to a predetermined temperature toward the substrate 10. In this embodiment, the first and second air knives 330 and 340 spray the dry gas in a direction opposite to the moving direction of the substrate 10.

The first and second air knives 330 and 340 have a rod shape extending in the second direction, and the heated dry gas is integrally formed in a width corresponding to one side of the substrate extending in the second direction. Discharge.

As such, the first and second air knives 330 and 340 provide the dry gas heated to a predetermined temperature to the substrate 10. Accordingly, since the substrate 10 is quickly dried, the substrate processing apparatus 1000 may reduce the drying failure and the process time of the substrate 10 and may improve the yield of the product.

2 and 3, the first air knife 330 is connected to the first gas discharge line 612, and the second air knife 340 is connected to the second gas discharge line 613. . The first gas discharge line 612 receives the dry gas HA heated from the heating tube 120 of the etching unit 100 and provides the dried gas HA to the first air knife 330. The second gas discharge line 613 is connected to the first gas discharge line 612, and receives the heated dry gas HA introduced from the first gas discharge line 612 to the second air knife. 340).

As such, the substrate processing apparatus 1000 does not include a separate heating device for heating the substrate 10 drying gas, and uses the heat generated from the etching unit 100 in the etching process to process the substrate. (10) The drying gas is heated. Accordingly, the substrate processing apparatus 1000 may improve the drying efficiency of the substrate without increasing the manufacturing cost.

Hereinafter, a process of spraying dry gas by the first and second air knives 330 and 340 will be described in detail with reference to the accompanying drawings.

FIG. 5 is a flowchart illustrating a process of drying a substrate by a drying unit illustrated in FIG. 1, and FIG. 6 is a diagram illustrating a process of spraying dry gas by the first and second air knives illustrated in FIG. 3.

2, 5 and 6, first, the unheated dry gas CA discharged from the gas supply unit 500 is introduced into the heating tube 120 of the etching unit 100 where the etching process is performed. (Step S110). The dry gas CA in the heating tube 120 is heated by heat transferred from the etching chamber 110 while flowing along the flow path 121.

Meanwhile, the substrate 10 that has undergone the etching process and the cleaning process is introduced into the drying chamber 310 and seated on the transfer unit 320.

The heated dry gas HA is discharged from the heating tube 120 and provided to the first and second air knives 330 and 340 (step S120).

The substrate 10 is sprayed by a drying gas HA on which the first and second air knives 330 and 340 are heated to the substrate 10 moving in the first direction by the transfer unit 320. It is dried (step S130).

Although described with reference to the embodiments above, those skilled in the art will understand that the present invention can be variously modified and changed without departing from the spirit and scope of the invention as set forth in the claims below. Could be.

100: etching part 110: etching chamber
120: heating tube 200: cleaning unit
300: drying unit 310: drying chamber
320: transfer unit 330, 340: air knife
400: unloader 500: gas supply

Claims (8)

An etching unit which sprays an etchant to a substrate to process the substrate, and heats a dry gas by using heat generated in the process of processing the substrate; And
And a substrate drying unit configured to receive the heated dry gas from the etching unit and to dry the substrate. The method of claim 1, wherein the etching portion,
An etching chamber providing a space in which the substrate is processed; And
Is provided on the outer wall of the etching chamber, a flow path for drying gas is provided therein, receiving the heat generated in the inside of the etching chamber in the process of processing the substrate to receive the dry gas heated in the flow path to the substrate Substrate processing apparatus comprising a heating tube provided to the drying unit. The method of claim 2,
The heating tube has a zigzag structure. The method according to claim 2 or 3,
The substrate drying unit,
A chamber providing a process space in which the substrate is dried;
A transfer unit installed in the process space and on which the substrate is seated and transferring the substrate;
A substrate disposed on the upper or lower portion of the transfer unit in the process space, the substrate comprising at least one fluid injection unit receiving the heated dry gas from the heating tube and injecting the heated substrate into the substrate mounted on the transfer unit Processing unit. Treating the substrate by injecting an etchant into the substrate, and heating a dry gas by using heat generated in the processing of the substrate using the etchant;
Thereafter, introducing the substrate into a chamber in which a drying process is performed and seating the substrate on a transfer unit; And
And drying the substrate by spraying a heated dry gas on the substrate being moved by the transfer unit. The method of claim 5, wherein the heating of the drying gas,
Introducing a non-heated dry gas into a heating tube installed on an outer wall of an etching chamber in which a substrate is processed using the etching solution; And
The drying gas in the heating tube is heated by the heat transferred from the etching chamber to the heating tube while flowing along the heating tube and provided to the substrate;
The heat transfer from the etching chamber to the heating tube is generated in the process of processing the substrate is made in the etching chamber. The method of claim 6,
And the heating tube is provided in a zigzag shape. 8. The method according to any one of claims 5 to 7,
The heated dry gas is injected to the substrate by a fluid injector,
And the fluid ejecting unit discharges the heated dry gas in a width corresponding to one side of the substrate.

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